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JPS6471181A - Composite thyristor - Google Patents

Composite thyristor

Info

Publication number
JPS6471181A
JPS6471181A JP62227854A JP22785487A JPS6471181A JP S6471181 A JPS6471181 A JP S6471181A JP 62227854 A JP62227854 A JP 62227854A JP 22785487 A JP22785487 A JP 22785487A JP S6471181 A JPS6471181 A JP S6471181A
Authority
JP
Japan
Prior art keywords
thyristor
fet
gate
conductive material
auxiliary thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62227854A
Other languages
Japanese (ja)
Other versions
JPH0449267B2 (en
Inventor
Minoru Kato
Shigeru Onda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Components Co Ltd
Original Assignee
Toshiba Corp
Toshiba Components Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Components Co Ltd filed Critical Toshiba Corp
Priority to JP62227854A priority Critical patent/JPS6471181A/en
Publication of JPS6471181A publication Critical patent/JPS6471181A/en
Publication of JPH0449267B2 publication Critical patent/JPH0449267B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs

Landscapes

  • Thyristor Switches And Gates (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain high sensitivity, high speed ignition, high dV/dt, and high dV/dt resistance characteristics, by mounting the auxiliary thyristor of an amplifying gate thyristor and a junction-type transistor in parallel and connecting the prescribed regions with the above elements. CONSTITUTION:An auxiliary thyristor for amplifying gate which forms a composite thyristor together with a principal thyristor 5 is connected to a P-type channel junction-type FET 20. In such a case, a cathode electrode 13 of the auxiliary thyristor is connected to a drain region 22 of the FET 20 through a conductive material 14. A source region 23 of the FET and a gate electrode 12 of the auxiliary thyristor are jointed through the conductive material 27. A gate region 24 of FET and the gate electrode 12 of the auxiliary thyristor are joined through conductive material 29 as well as resistance RG.
JP62227854A 1987-09-11 1987-09-11 Composite thyristor Granted JPS6471181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62227854A JPS6471181A (en) 1987-09-11 1987-09-11 Composite thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62227854A JPS6471181A (en) 1987-09-11 1987-09-11 Composite thyristor

Publications (2)

Publication Number Publication Date
JPS6471181A true JPS6471181A (en) 1989-03-16
JPH0449267B2 JPH0449267B2 (en) 1992-08-11

Family

ID=16867409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62227854A Granted JPS6471181A (en) 1987-09-11 1987-09-11 Composite thyristor

Country Status (1)

Country Link
JP (1) JPS6471181A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014523108A (en) * 2011-06-17 2014-09-08 クリー インコーポレイテッド Optically auxiliary triggered wide band gap thyristor with positive temperature coefficient

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014523108A (en) * 2011-06-17 2014-09-08 クリー インコーポレイテッド Optically auxiliary triggered wide band gap thyristor with positive temperature coefficient
US9171977B2 (en) 2011-06-17 2015-10-27 Cree, Inc. Optically assist-triggered wide bandgap thyristors having positive temperature coefficients
US9941439B2 (en) 2011-06-17 2018-04-10 Cree, Inc. Optically assist-triggered wide bandgap thyristors having positive temperature coefficients

Also Published As

Publication number Publication date
JPH0449267B2 (en) 1992-08-11

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