JPS6447029U - - Google Patents
Info
- Publication number
- JPS6447029U JPS6447029U JP14220387U JP14220387U JPS6447029U JP S6447029 U JPS6447029 U JP S6447029U JP 14220387 U JP14220387 U JP 14220387U JP 14220387 U JP14220387 U JP 14220387U JP S6447029 U JPS6447029 U JP S6447029U
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- vapor phase
- phase growth
- growth apparatus
- outer periphery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001947 vapour-phase growth Methods 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 2
- 239000002994 raw material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Description
第１図は本考案装置の断面正面模式図、第２図
は本考案装置により成長された薄膜の断面の膜厚
分布を示す図、第３図は整流手段の上面図、第４
図は従来装置の断面正面模式図、第５図は従来装
置の反応管内の流速分布を示す図、第６図は従来
装置により成長された薄膜の断面の膜厚分布を示
す図である。
１…反応管、２…基板、３…受台、４…高周波
コイル、５…導入管、６…整流手段（整流板）、
７…孔。
Fig. 1 is a schematic cross-sectional front view of the device of the present invention, Fig. 2 is a diagram showing the film thickness distribution in the cross section of a thin film grown by the device of the present invention, Fig. 3 is a top view of the rectifying means, and Fig. 4
5 is a diagram showing the flow velocity distribution in the reaction tube of the conventional apparatus, and FIG. 6 is a diagram showing the film thickness distribution in the cross section of a thin film grown by the conventional apparatus. DESCRIPTION OF SYMBOLS 1... Reaction tube, 2... Substrate, 3... pedestal, 4... High frequency coil, 5... Introducing tube, 6... Rectifying means (straightening plate),
7...hole.
Claims (1)
反応管に導くようになしてある気相成長装置にお
いて、 前記反応管には、整流手段が備えられ、この整
流手段のコンダクタンスは該反応管の外周に向つ
て順次増大していることを特徴とする気相成長装
置。 ２ 前記整流手段には該反応管の外周に向つて順
次大きな孔が設けられていることを特徴とする実
用新案登録請求の範囲第１項に記載の気相成長装
置。 ３ 前記整流手段には多数の孔が設けられ、この
孔の密度は反応管の外周に向つて順次増大してい
ることを特徴とする実用新案登録請求の範囲第１
項に記載の気相成長装置。[Claims for Utility Model Registration] 1. A vapor phase growth apparatus that mixes a plurality of raw material gases and guides the mixed gas to a reaction tube, the reaction tube being equipped with a rectifying means, A vapor phase growth apparatus characterized in that the conductance of the means gradually increases toward the outer periphery of the reaction tube. 2. The vapor phase growth apparatus according to claim 1, wherein the rectifying means is provided with holes that become larger in sequence toward the outer periphery of the reaction tube. 3. The rectifying means is provided with a large number of holes, and the density of the holes gradually increases toward the outer periphery of the reaction tube.
The vapor phase growth apparatus described in section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14220387U JPS6447029U (en) | 1987-09-17 | 1987-09-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14220387U JPS6447029U (en) | 1987-09-17 | 1987-09-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6447029U true JPS6447029U (en) | 1989-03-23 |
Family
ID=31407951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14220387U Pending JPS6447029U (en) | 1987-09-17 | 1987-09-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6447029U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001152344A (en) * | 1999-11-29 | 2001-06-05 | Fujitsu Ltd | Chemical vapor deposition equipment |
| JP2002506570A (en) * | 1997-06-25 | 2002-02-26 | ラム・リサーチ・コーポレーション | Plasma reactor for passivating substrates |
| US7632093B2 (en) | 2004-09-06 | 2009-12-15 | Samsung Electronics Co., Ltd. | Pyrolysis furnace having gas flowing path controller |
-
1987
- 1987-09-17 JP JP14220387U patent/JPS6447029U/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002506570A (en) * | 1997-06-25 | 2002-02-26 | ラム・リサーチ・コーポレーション | Plasma reactor for passivating substrates |
| JP2001152344A (en) * | 1999-11-29 | 2001-06-05 | Fujitsu Ltd | Chemical vapor deposition equipment |
| US7632093B2 (en) | 2004-09-06 | 2009-12-15 | Samsung Electronics Co., Ltd. | Pyrolysis furnace having gas flowing path controller |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6447029U (en) | ||
| JPS63140619U (en) | ||
| JPS6454329U (en) | ||
| JP3184550B2 (en) | Vapor phase growth method and apparatus | |
| JPS62201927U (en) | ||
| JPS61172169U (en) | ||
| JPS61192443U (en) | ||
| JPS6346837U (en) | ||
| JPH02146165U (en) | ||
| JPS5375857A (en) | Vapor phase growth apparatus | |
| JPH02118758U (en) | ||
| JPS63132422A (en) | Reaction tube for vapor growth device | |
| JPH0187173U (en) | ||
| JPH0210470U (en) | ||
| JPH0425228U (en) | ||
| JPH0351834U (en) | ||
| JPS62203272U (en) | ||
| JPH01100431U (en) | ||
| JPS6430357U (en) | ||
| JPS61158946U (en) | ||
| JPS6349231U (en) | ||
| JPH02146725A (en) | Metal organic vapor phase epitaxy equipment | |
| JPS537171A (en) | Vapor phase growth apparatus | |
| JPS62180933U (en) | ||
| JPS58168575U (en) | Metal-organic vapor phase epitaxy equipment |