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JPS642360A - Hetero-junction bipolar transistor - Google Patents

Hetero-junction bipolar transistor

Info

Publication number
JPS642360A
JPS642360A JP62158102A JP15810287A JPS642360A JP S642360 A JPS642360 A JP S642360A JP 62158102 A JP62158102 A JP 62158102A JP 15810287 A JP15810287 A JP 15810287A JP S642360 A JPS642360 A JP S642360A
Authority
JP
Japan
Prior art keywords
layer
base layer
base
band width
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62158102A
Other languages
Japanese (ja)
Other versions
JPH012360A (en
JPH0656853B2 (en
Inventor
Shinichi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62158102A priority Critical patent/JPH0656853B2/en
Publication of JPH012360A publication Critical patent/JPH012360A/en
Publication of JPS642360A publication Critical patent/JPS642360A/en
Publication of JPH0656853B2 publication Critical patent/JPH0656853B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To shorten the minority carrier transit time in a base layer, and to improve high-frequency performance and operation at high speed by composing the base layer of a first base layer having grated gap structure and a second base layer having constant forbidden band width and electron affinity larger than an emitter layer.
CONSTITUTION: A high concentration layer 2 being partitioned by insulating regions 1a and having an impurity at a specified value and a collector layer 3 having specified concentration, using Si as a dopant are formed onto the surface of a semi-insulating substrate 1. Opposite conductivity type base layers 4, 5 are shaped onto the layer 3, and an emitter layer 6 having electron affinity smaller than the base layers 4, 5 is formed onto the base layer 5, thus constituting a hetero-junction bipolar transistor. The base layer 4 is employed as a first layer, forbidden band width of which continuously changes and which uses Be as a dopant and has impurity concentration, and the base layer 5 is employed as a second impurity layer, forbidden band width of which is kept constant and which has predetermined thickness. An internal electric field is accelerated in the first base layer 4, and electrons are made to transit and reach to the collector layer 3.
COPYRIGHT: (C)1989,JPO&Japio
JP62158102A 1987-06-24 1987-06-24 Heterojunction bipolar transistor Expired - Fee Related JPH0656853B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62158102A JPH0656853B2 (en) 1987-06-24 1987-06-24 Heterojunction bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62158102A JPH0656853B2 (en) 1987-06-24 1987-06-24 Heterojunction bipolar transistor

Publications (3)

Publication Number Publication Date
JPH012360A JPH012360A (en) 1989-01-06
JPS642360A true JPS642360A (en) 1989-01-06
JPH0656853B2 JPH0656853B2 (en) 1994-07-27

Family

ID=15664346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62158102A Expired - Fee Related JPH0656853B2 (en) 1987-06-24 1987-06-24 Heterojunction bipolar transistor

Country Status (1)

Country Link
JP (1) JPH0656853B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172672A (en) * 1991-04-11 1992-12-22 Toyota Jidosha Kabushiki Kaisha Evaporative fuel purge apparatus
JP2001068480A (en) * 1999-06-23 2001-03-16 Hitachi Ltd Semiconductor device and semiconductor integrated circuit
US6759697B2 (en) 2000-09-11 2004-07-06 Matsushita Electric Industrial Co., Ltd. Heterojunction bipolar transistor
JP2010062154A (en) * 2002-09-26 2010-03-18 Panduit Corp Multi-tap compression connector

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62265762A (en) * 1986-05-14 1987-11-18 Fujitsu Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62265762A (en) * 1986-05-14 1987-11-18 Fujitsu Ltd Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172672A (en) * 1991-04-11 1992-12-22 Toyota Jidosha Kabushiki Kaisha Evaporative fuel purge apparatus
JP2001068480A (en) * 1999-06-23 2001-03-16 Hitachi Ltd Semiconductor device and semiconductor integrated circuit
US6759697B2 (en) 2000-09-11 2004-07-06 Matsushita Electric Industrial Co., Ltd. Heterojunction bipolar transistor
US7135721B2 (en) 2000-09-11 2006-11-14 Matsushita Electric Industrial Co., Ltd. Heterojunction bipolar transistor having reduced driving voltage requirements
JP2010062154A (en) * 2002-09-26 2010-03-18 Panduit Corp Multi-tap compression connector

Also Published As

Publication number Publication date
JPH0656853B2 (en) 1994-07-27

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees