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JPS53119694A - Semiconductor pressure transducer - Google Patents

Semiconductor pressure transducer

Info

Publication number
JPS53119694A
JPS53119694A JP3482977A JP3482977A JPS53119694A JP S53119694 A JPS53119694 A JP S53119694A JP 3482977 A JP3482977 A JP 3482977A JP 3482977 A JP3482977 A JP 3482977A JP S53119694 A JPS53119694 A JP S53119694A
Authority
JP
Japan
Prior art keywords
pressure transducer
semiconductor pressure
bonding
fimrly
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3482977A
Other languages
Japanese (ja)
Other versions
JPS5816345B2 (en
Inventor
Shunji Shiromizu
Susumu Kimijima
Shozo Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3482977A priority Critical patent/JPS5816345B2/en
Publication of JPS53119694A publication Critical patent/JPS53119694A/en
Publication of JPS5816345B2 publication Critical patent/JPS5816345B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE: To make a device which fimrly bonds to a fixing base and has less temperature hysteresis by depositing Al or Ni on the bonding end face of a pressure transducing substrate with, for example, a SiO2 film being kept remained, and performing gold-Si eutectic alloy bonding.
COPYRIGHT: (C)1978,JPO&Japio
JP3482977A 1977-03-29 1977-03-29 Semiconductor pressure transducer Expired JPS5816345B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3482977A JPS5816345B2 (en) 1977-03-29 1977-03-29 Semiconductor pressure transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3482977A JPS5816345B2 (en) 1977-03-29 1977-03-29 Semiconductor pressure transducer

Publications (2)

Publication Number Publication Date
JPS53119694A true JPS53119694A (en) 1978-10-19
JPS5816345B2 JPS5816345B2 (en) 1983-03-30

Family

ID=12425076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3482977A Expired JPS5816345B2 (en) 1977-03-29 1977-03-29 Semiconductor pressure transducer

Country Status (1)

Country Link
JP (1) JPS5816345B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555576A (en) * 1978-10-19 1980-04-23 Fuji Electric Co Ltd Method of fabricating semiconductor element
US5668033A (en) * 1995-05-18 1997-09-16 Nippondenso Co., Ltd. Method for manufacturing a semiconductor acceleration sensor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555576A (en) * 1978-10-19 1980-04-23 Fuji Electric Co Ltd Method of fabricating semiconductor element
US5668033A (en) * 1995-05-18 1997-09-16 Nippondenso Co., Ltd. Method for manufacturing a semiconductor acceleration sensor device

Also Published As

Publication number Publication date
JPS5816345B2 (en) 1983-03-30

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