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JPS5922435A - Latch circuit - Google Patents

Latch circuit

Info

Publication number
JPS5922435A
JPS5922435A JP57131486A JP13148682A JPS5922435A JP S5922435 A JPS5922435 A JP S5922435A JP 57131486 A JP57131486 A JP 57131486A JP 13148682 A JP13148682 A JP 13148682A JP S5922435 A JPS5922435 A JP S5922435A
Authority
JP
Japan
Prior art keywords
type
terminal
conductive
level
output terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57131486A
Other languages
Japanese (ja)
Inventor
Kazuyuki Miyadera
宮寺 一幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57131486A priority Critical patent/JPS5922435A/en
Publication of JPS5922435A publication Critical patent/JPS5922435A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors

Landscapes

  • Shift Register Type Memory (AREA)

Abstract

PURPOSE:To simplify a control line and to decrease the number of elements, by inserting an FET of the same conduction type in series to an FET of a conduction type in one inverting circuit of two inverting circuits comprising C-MOSes. CONSTITUTION:A clock terminal C is connected to a gate of an N MOST14 and a gate of a P MOST17. An input terminal D is connected to a source of the N MOST14. When an H level is inputted to the terminal C, the N MOST14 is conductive, the P MOST17 is nonconductive, and when a terminal D is at an L level, an output terminal Q goes to the L level, a P MOST20 is conductive, an N MOST21 is nonconductive and an output terminal Q' goes to an H level. When the terminal C changes from H to L level, the N MOST14 is nonconductive and the P MOST17 is conductive, and the output terminal Q is kept to the L level and the Q' is kept at the H level.

Description

【発明の詳細な説明】 本発明は相補型電界効果トランジスタ(以下C−MO8
と称す)回路に関し、特にC−MO8のラッチ回路に関
す。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a complementary field effect transistor (hereinafter referred to as C-MO8
The present invention relates to a C-MO8 latch circuit, in particular to a C-MO8 latch circuit.

C−MO8のラッチ回路は第1図に示す如くPチャンネ
ルエンハンスメントff1M08)ランジスタ(以下P
型MO8Tと称す)とNチャンネルエンハンスメント型
MOSトランジスタ(以下N型MO8’I’と称す)が
対となったトランスファゲートが2対と2個のインバー
タ回路によって構成される。
The latch circuit of C-MO8 is a P channel enhancement ff1M08) transistor (hereinafter P
A transfer gate, which is a pair of a type MO8T) and an N-channel enhancement type MOS transistor (hereinafter referred to as an N-type MO8'I'), is constituted by two pairs and two inverter circuits.

かかる構成においてDはデータ入力端子、C及びCはク
ロック端子Q、Qは出力端子である。
In this configuration, D is a data input terminal, C and C are clock terminals Q, and Q is an output terminal.

ここで第1図の動作を簡単に説明する。Here, the operation shown in FIG. 1 will be briefly explained.

クロック端子CはNmMO8T2及びP型MO8TIO
のゲートに接続されクロック端子ごはPmMo5’t’
 1及c1my、os’r 11(7)ゲートに接続さ
れクロック端子Cの入力信号とり四ツク端子Cの入力信
号は互いに逆相となって入力される。P型HO8TIの
ソースとN型MO8’l!2のソースは入力端子りに接
続され、P型MO8T1のドレインとN型MO8T2の
ドレインはP型MO8T4のゲート及びN型MO8T5
のゲートに接続される。P型MO8T4とN型MO8T
5で第1のインバータ回路が構成され該インバータ回路
の出力はQとなる。
Clock terminal C is NmMO8T2 and P type MO8TIO
The clock terminal connected to the gate of PmMo5't'
1, c1my, and os'r11(7), and the input signal of the clock terminal C and the input signal of the four clock terminal C are inputted with opposite phases to each other. P-type HO8TI source and N-type MO8'l! The source of MO8T2 is connected to the input terminal, and the drain of P-type MO8T1 and the drain of N-type MO8T2 are connected to the gate of P-type MO8T4 and the drain of N-type MO8T5.
connected to the gate. P type MO8T4 and N type MO8T
5 constitutes a first inverter circuit, and the output of the inverter circuit is Q.

P型MO8T7と8世MO8Taで第2のインバータ回
路が構成され該インバータ回路の出力はQとな石、第2
のインバータ回路の入力は前記Qに接続される。
A second inverter circuit is composed of the P-type MO8T7 and the 8th generation MO8Ta, and the output of the inverter circuit is
The input of the inverter circuit is connected to the Q.

P型MO8TIOのソース及びN型MO8T11のソー
スは前記P減MO8T4及びN型MO8T5のゲートに
接続されP型MO8T10のドレイン及びNfiMO8
T11のドレインは前記インバータの出力Qに接続され
る。
The source of the P-type MO8TIO and the source of the N-type MO8T11 are connected to the gates of the P-reduced MO8T4 and N-type MO8T5, and the drain of the P-type MO8T10 and the NfiMO8
The drain of T11 is connected to the output Q of the inverter.

ここでクロック端子Cにハイレベル(VDDレベル)カ
、クロック端子Cにロウレベル(Vssレベル)カ入力
される。!:PWMO8T1 及びN型MO8T2u導
通となシ入力端子りの信号が第1のインバータ回路に伝
達される、この時P型MO8Txo及びN型MO8T1
1は非導通である。
Here, a high level (VDD level) signal is input to the clock terminal C, and a low level (Vss level) signal is input to the clock terminal C. ! : PWMO8T1 and N-type MO8T2u conductive signals from the input terminals are transmitted to the first inverter circuit, at this time P-type MO8Txo and N-type MO8T1
1 is non-conductive.

入力信号りがハイレベルであれば第1のインバータ回路
の出力Qはロウレベルとなシ、第2のインバータの出力
Qはハイレベルとなる。入力信号りがロウレベルであれ
ばmlのインバータ回路の出力Qは・・インベルとなυ
第2のイン・く−夕回路の出力Qhロウレベルとなる。
If the input signal is at a high level, the output Q of the first inverter circuit will be at a low level, and the output Q of the second inverter will be at a high level. If the input signal is low level, the output Q of the ml inverter circuit is...invel υ
The output Qh of the second input/output circuit becomes low level.

次にクロック端子Cにロウレベルが、クロックm子Uv
cノ・イレベルが入力されるとP型MO$T1及びN型
MO8T2は非導通になυ、P型MO8T10及びN型
MO8T11は導通となυ入力信号りの情報がラッチさ
れ、データが保持される。
Next, a low level is applied to the clock terminal C, and the clock m terminal Uv
When the c level is input, P-type MO$T1 and N-type MO8T2 become non-conductive υ, and P-type MO8T10 and N-type MO8T11 become conductive. υThe information of the input signal is latched and the data is held. Ru.

ととるで以上説明した第1図の従来回路によれば、クロ
ック信号に逆相の4目号を必要としかつデータ保持用の
トランスファゲート回路を必要とするため制御線の複雑
化と素子数の増大を招くととになる。
According to the conventional circuit shown in FIG. 1 explained above, the clock signal requires a fourth signal with an opposite phase, and a transfer gate circuit for data retention is required, resulting in complicated control lines and an increase in the number of elements. It becomes a cause of increase.

本発明の目的は、制御線を単純化し素子数の減少を計っ
た0MO8のラッチ回路を提供することである。
An object of the present invention is to provide a 0MO8 latch circuit with simplified control lines and reduced number of elements.

次に本発明を図面を参照して説明する。Next, the present invention will be explained with reference to the drawings.

第2図は本発明の一実施例である。第2図においてクロ
ック端子Cは、N型MO8T14のゲート電極及びPi
MO8T17のゲート電極に接続され入力端子りはN型
MO8T14のソース電極に接続され該NmMO8Tx
4のドレイン電極はP型MO8T17のドレイン電極に
接続される。P型MO8T 17(0ソ=x[極はPW
MO8T16(D)’レイン電極に接続され該P型MO
8T16のソース電極は電源端子VDD (最高電位と
なる)に接続され該P型MO8T16のゲート電極は出
力端子Qに接続される。N型MO8T18のドレイン電
極はN型MO8T14のドレイン電極に接続され、該N
型MO8T18のソース電極は電源端子Vss (最低
電位となる)に接続され、該N型MO8’i”18のゲ
ート電極は出力端子Qに接続される。P型MO8T17
のドレイン電極とN型MO8Tのドレイン電極はいずれ
も出力端子Qに接続される。出力端子QはP型MO8T
20及びN型MO8T21のいずれのゲート電極にも接
続され、P型MO8T20のソース電極及びドレイン電
極はそれぞれ電源端子VDDと出力端子Qに接続され、
N型MO8T21のソース電極及びドレイン電極はそれ
ぞれ電源端子VSSと出力端子qに接続される。  ′ ここで第2図の動作を説明する。
FIG. 2 shows an embodiment of the present invention. In FIG. 2, the clock terminal C is connected to the gate electrode of the N-type MO8T14 and the Pi
The input terminal is connected to the gate electrode of MO8T17 and the input terminal is connected to the source electrode of N-type MO8T14.
The drain electrode of No. 4 is connected to the drain electrode of P-type MO8T17. P-type MO8T 17 (0 so = x [pole is PW
MO8T16(D)' is connected to the rain electrode and the P-type MO
The source electrode of the 8T16 is connected to the power supply terminal VDD (which has the highest potential), and the gate electrode of the P-type MO8T16 is connected to the output terminal Q. The drain electrode of N-type MO8T18 is connected to the drain electrode of N-type MO8T14.
The source electrode of the type MO8T18 is connected to the power supply terminal Vss (the lowest potential), and the gate electrode of the N type MO8'i''18 is connected to the output terminal Q.P type MO8T17
The drain electrode of the N-type MO8T and the drain electrode of the N-type MO8T are both connected to the output terminal Q. Output terminal Q is P type MO8T
20 and the gate electrode of N-type MO8T21, and the source electrode and drain electrode of P-type MO8T20 are connected to power supply terminal VDD and output terminal Q, respectively.
A source electrode and a drain electrode of the N-type MO8T21 are connected to a power supply terminal VSS and an output terminal q, respectively. ' The operation shown in FIG. 2 will now be explained.

クロック端子Cにノ・インベルが入力されるとN型MO
8T14が導通し、P型MO8T17が非導通となシ、
この時入力端子りがロウレベルであれば、出力端子Qは
ロウレベルとなシ、P型MO8T20は導通し、N型M
O8T21は非導通となって出力端子Qは/・インベル
となる。出力端子Qが7・インベルになると、N型MO
8T18は導通しP型MO8TJ6は非導通となる〇 次にクロック端子Cがノ・インペルからロウレベルに変
化するとN型MO8T+4が非導通、P塁MO8T17
が導通となシ、出力端子Qがロウレベル、出力端子Qが
、ニイレベルに保持される。
When no signal is input to the clock terminal C, the N-type MO
8T14 is conductive and P-type MO8T17 is non-conductive.
At this time, if the input terminal Q is at a low level, the output terminal Q will not be at a low level, the P-type MO8T20 will be conductive, and the N-type MO8T20 will be conductive.
O8T21 becomes non-conductive and the output terminal Q becomes /.inbel. When the output terminal Q becomes 7 invel, N type MO
8T18 becomes conductive and P-type MO8TJ6 becomes non-conductive. Next, when the clock terminal C changes from no impel to low level, N-type MO8T+4 becomes non-conductive, and P-base MO8T17 becomes non-conductive.
is not conductive, the output terminal Q is held at low level, and the output terminal Q is held at knee level.

クロック端子Cが・・インベルの時入力端子りがハイレ
ベルであると、出力端子Qがノ・インペルになシ、N型
M、08T21は導通し、P屋MO8T20が非導通と
なシ出力端子Qはロウレベルとなυ、したがってN型M
O8T18は非導通となる。
When the clock terminal C is at an invert level and the input terminal is at a high level, the output terminal Q is at an invert level, the N-type M, 08T21 is conductive, and the P-ya MO8T20 is non-conductive. Q is low level υ, therefore N type M
O8T18 becomes non-conductive.

次にクロック端子CがロウレベルになるとN型MO8T
14は非導通、P型MO8T17は導通となシ出力端子
Qは・・インベル出力端子Qはロウレベルに保持される
Next, when the clock terminal C becomes low level, the N-type MO8T
14 is non-conductive, and the P-type MO8T17 is conductive.The output terminal Q...the invert output terminal Q is held at a low level.

第3図は本発明の他の実施例でおる。FIG. 3 shows another embodiment of the invention.

第3図9実施例は、第2図においてP型MO8T16及
び17のゲート電極がそれぞれ出力端子Q1クロック端
子Cに接続されている接続を逆にして、P型MO8T2
7のゲートをクロック端子Cに接続しP型MO8T28
のゲート電極を出力端子Qに接続して第2図の構成と同
じ効果を得ている。
In the embodiment shown in FIG. 3, the gate electrodes of the P-type MO8Ts 16 and 17 are connected to the output terminal Q1 and the clock terminal C in FIG.
Connect the gate of 7 to the clock terminal C to create a P-type MO8T28.
The same effect as the configuration shown in FIG. 2 is obtained by connecting the gate electrode of 1 to the output terminal Q.

第4図は本発明の他の実施例である。FIG. 4 shows another embodiment of the invention.

第4図においてクロック端子CはP型MO8T36のゲ
ート電極及びN型MO8T39のゲート電極に接続され
、入力端子りはP型MO8T36のソース電極に接続さ
れ該P型MO8T36のドレイン電極はN型MO8T3
9のドレイン電極に接続される。
In FIG. 4, the clock terminal C is connected to the gate electrode of P-type MO8T36 and the gate electrode of N-type MO8T39, the input terminal is connected to the source electrode of P-type MO8T36, and the drain electrode of P-type MO8T36 is connected to the gate electrode of N-type MO8T39.
It is connected to the drain electrode of 9.

N型MO8T39のソース電極はN型MO8T40のド
レイン電極に接続され、該N型MO8T40のソース電
極は電源端子VSSに接続され、該N型MO8T40の
ゲート電極は出力端子Qに接続される。PiMO8T3
80)’レイン電極はNWMO8T39のドレイン電極
に接続され、該P型MO8T38のゲート電極は出力端
子Qに接続される。P型MO8T41のゲート電極とN
型MO8T42のゲートM1極はいずれも出力端子Qに
接続され、P型MO8T41とN型MO8T42で反転
回路を栴成し該反転回路の出力は出力端子Qに接続され
る。
The source electrode of the N-type MO8T39 is connected to the drain electrode of the N-type MO8T40, the source electrode of the N-type MO8T40 is connected to the power supply terminal VSS, and the gate electrode of the N-type MO8T40 is connected to the output terminal Q. PiMO8T3
80)'The rain electrode is connected to the drain electrode of NWMO8T39, and the gate electrode of the P-type MO8T38 is connected to output terminal Q. P-type MO8T41 gate electrode and N
The gate M1 poles of the MO8T42 type are both connected to the output terminal Q, and the P-type MO8T41 and N-type MO8T42 form an inversion circuit, and the output of the inversion circuit is connected to the output terminal Q.

第4図の実施例ではクロック端子Cにロウレベルが入力
されるとP型MO8T36は導通し、N型MO8T39
が非導通となシ入力端子りの情報が出力端子Q、Qに伝
達される。クロック端子CがロウレベルになるとP型M
O8T36は非導通に、N型MO8T39は導通になシ
、出力端子Q、Qの情報が保持される。。
In the embodiment shown in FIG. 4, when a low level is input to the clock terminal C, the P-type MO8T36 becomes conductive, and the N-type MO8T39 becomes conductive.
Information from the input terminals that are non-conductive is transmitted to the output terminals Q, Q. When clock terminal C becomes low level, P type M
The O8T36 is non-conductive, the N-type MO8T39 is not conductive, and the information of the output terminals Q and Q is held. .

第5図は本発明の他の実施例である。FIG. 5 shows another embodiment of the invention.

第5図の実施例では、第4図においてN型MO8T39
及びN型MO8T40のゲート電極がそれぞれクロック
端子C1出力端子Qに接続されている接続を逆にして、
N型MO8T49のゲート電極をクロック端子口に接続
し、N型MO8T4Bのゲート電極を出力端子Qに接続
して第4図の構成と同じ効果を得ている。
In the embodiment shown in FIG. 5, N-type MO8T39 is shown in FIG.
By reversing the connections in which the gate electrodes of and N-type MO8T40 are connected to the clock terminal C1 and the output terminal Q,
The gate electrode of the N-type MO8T49 is connected to the clock terminal port, and the gate electrode of the N-type MO8T4B is connected to the output terminal Q to obtain the same effect as the configuration shown in FIG.

以上の様に本発明によれば、制御信号が簡単になシかつ
素子数の減少を計った0MO8のラッチ回路が得られ、
特に大規模論理集積回路に使用して有効である。
As described above, according to the present invention, it is possible to obtain a 0MO8 latch circuit in which the control signal is simple and the number of elements is reduced.
It is particularly effective for use in large-scale logic integrated circuits.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のC−MOSラッチ回路図、第2図は本発
廚の一実施例の回路図、第3図乃至第5図は本発明の他
の実施例の回路図である。 第1図において1.4.7.10はPチャンネルエンハ
ンスメントmMO8トランジスタ2.5.8゜11はN
チャンネルエンハンスメントmMO8トランジスタ、第
2図乃至第3図において16.17゜20.27.28
.31はPチャンネルエンハンスメント型MO8)ラン
ジスタ、14.18.21.25.29゜32はNチャ
ンネルエンハンスメントlJIMOBトランジスタ、第
4図乃至第5図において36.38゜41.45,47
.50はPチャンネルエンハンスメント型MO8)ニア
yジスタ、39.40.42.48.49゜51はNチ
ャンネルエンハンスメント型MO8トランジスタである
。 萌1m Vss         Vss 第2図 第 3 区
FIG. 1 is a conventional C-MOS latch circuit diagram, FIG. 2 is a circuit diagram of one embodiment of the present invention, and FIGS. 3 to 5 are circuit diagrams of other embodiments of the present invention. In Figure 1, 1.4.7.10 is a P-channel enhancement mMO8 transistor 2.5.8°11 is N
Channel enhancement mMO8 transistor, 16.17°20.27.28 in Figures 2-3
.. 31 is a P-channel enhancement type MO8) transistor, 14.18.21.25.29゜32 is an N-channel enhancement lJIMOB transistor, 36.38゜41.45, 47 in Figs. 4 and 5.
.. 50 is a P-channel enhancement type MO8) near-y transistor, and 39.40.42.48.49.51 is an N-channel enhancement type MO8 transistor. Moe 1m Vss Vss Figure 2 Section 3

Claims (1)

【特許請求の範囲】[Claims] 相補型電界効果トランジスタによって構成される2個の
反転回路の一方の出力が他方の入力に相互に接続され、
一方の反転回路においてl導電型のトランジスタに直列
に同一導電型のトランジスタを挿入し、該反転回路の出
力と入力端子の間に前記挿入したトランジスタと反対導
電型のトランジスタを挿入し、該2個の挿入したトラン
ジスタのゲート電極に制御信号を入力したことを特徴と
するラッチ回路。
The output of one of two inverting circuits constituted by complementary field effect transistors is mutually connected to the input of the other,
In one inverting circuit, a transistor of the same conductivity type is inserted in series with a transistor of the L conductivity type, and a transistor of the opposite conductivity type to the inserted transistor is inserted between the output and the input terminal of the inverting circuit, and the two A latch circuit characterized in that a control signal is input to the gate electrode of a transistor inserted.
JP57131486A 1982-07-28 1982-07-28 Latch circuit Pending JPS5922435A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57131486A JPS5922435A (en) 1982-07-28 1982-07-28 Latch circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57131486A JPS5922435A (en) 1982-07-28 1982-07-28 Latch circuit

Publications (1)

Publication Number Publication Date
JPS5922435A true JPS5922435A (en) 1984-02-04

Family

ID=15059105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57131486A Pending JPS5922435A (en) 1982-07-28 1982-07-28 Latch circuit

Country Status (1)

Country Link
JP (1) JPS5922435A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60500794A (en) * 1983-03-23 1985-05-23 ゼネラル・エレクトリック・カンパニイ CMOS latch cell containing 5 transistors and static flip-flop using the cell
JPS6125321A (en) * 1984-07-16 1986-02-04 Nec Corp Data latch circuit
JPS6295018A (en) * 1985-10-22 1987-05-01 Nec Corp Cmos latching circuit
US5661503A (en) * 1991-11-06 1997-08-26 Canon Kabushiki Kaisha Polycrystalline silicon-based substrate for liquid jet recording head, process for producing said substrate, liquid jet recording head in which said substrate is used, and liquid jet recording apparatus in which said substrate is used
JP2012089223A (en) * 2010-09-23 2012-05-10 Semiconductor Energy Lab Co Ltd Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60500794A (en) * 1983-03-23 1985-05-23 ゼネラル・エレクトリック・カンパニイ CMOS latch cell containing 5 transistors and static flip-flop using the cell
JPS6125321A (en) * 1984-07-16 1986-02-04 Nec Corp Data latch circuit
JPS6295018A (en) * 1985-10-22 1987-05-01 Nec Corp Cmos latching circuit
US5661503A (en) * 1991-11-06 1997-08-26 Canon Kabushiki Kaisha Polycrystalline silicon-based substrate for liquid jet recording head, process for producing said substrate, liquid jet recording head in which said substrate is used, and liquid jet recording apparatus in which said substrate is used
JP2012089223A (en) * 2010-09-23 2012-05-10 Semiconductor Energy Lab Co Ltd Semiconductor device

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