JPS5921948B2 - Indium plating method - Google Patents
Indium plating methodInfo
- Publication number
- JPS5921948B2 JPS5921948B2 JP32081A JP32081A JPS5921948B2 JP S5921948 B2 JPS5921948 B2 JP S5921948B2 JP 32081 A JP32081 A JP 32081A JP 32081 A JP32081 A JP 32081A JP S5921948 B2 JPS5921948 B2 JP S5921948B2
- Authority
- JP
- Japan
- Prior art keywords
- plating
- powder
- indium
- plated
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007747 plating Methods 0.000 title claims description 61
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims description 31
- 238000000034 method Methods 0.000 title claims description 22
- 229910052738 indium Inorganic materials 0.000 title claims description 20
- 239000007864 aqueous solution Substances 0.000 claims description 13
- 229910001449 indium ion Inorganic materials 0.000 claims description 7
- 239000000843 powder Substances 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 25
- 239000002184 metal Substances 0.000 description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 8
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 235000005074 zinc chloride Nutrition 0.000 description 4
- 239000011592 zinc chloride Substances 0.000 description 4
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- -1 etc. Chemical compound 0.000 description 1
- 238000005246 galvanizing Methods 0.000 description 1
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 229910000337 indium(III) sulfate Inorganic materials 0.000 description 1
- XGCKLPDYTQRDTR-UHFFFAOYSA-H indium(iii) sulfate Chemical compound [In+3].[In+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O XGCKLPDYTQRDTR-UHFFFAOYSA-H 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
Description
【発明の詳細な説明】 本発明は全く新規なインジウムメッキ方法に関する。[Detailed description of the invention] The present invention relates to a completely new indium plating method.
近年、メッキ粉体の需要増加に伴ない種々のメッキ方法
が提案されているが、これらのうち置換法によるメッキ
法はその操作の簡易性の故に広く利用されている。粉体
のメッキ法として従来公知の置換メッキ法は、被メッキ
粉体と還元用金属粉体との混合粉に対し又はこれらの混
合過程に対し該混合粉を攪拌しながらメッキ金属含有溶
液を添加するかもしくはメッキ金属含有溶液中に攪拌下
で被メッキ粉体と還元用金属粉体とを一緒に又は各別に
添加することにより行なわれている。In recent years, various plating methods have been proposed as the demand for plating powder increases, and among these plating methods, the substitution plating method is widely used because of its ease of operation. The displacement plating method, which is conventionally known as a powder plating method, involves adding a plating metal-containing solution to a mixed powder of a powder to be plated and a metal powder for reduction, or to the mixing process of the mixed powder while stirring the mixed powder. Alternatively, the powder to be plated and the reducing metal powder are added together or separately into a solution containing the plating metal under stirring.
しかしながら、上述した置換法によるメッキ法ではメッ
キしようとする金属をそれより卑な金属粉で還元するこ
とを反応上の基本とするものであるから金、白金、パラ
ジウム、銀のごとき標準電極電位が非常に貴な金属を対
象とする粉体のメッキにおいては還元効率およびメッキ
仕上りともに良好であるが、亜鉛、錫、ニッケル、コバ
ルト、インジウムのごとき標準電極電位が卑な金属粉を
メッキする場合においては還元効率、メッキ仕上りがと
もに悪く実用的でない。However, in the above-mentioned substitution plating method, the basic reaction is to reduce the metal to be plated with metal powder that is less noble, so the standard electrode potential of gold, platinum, palladium, silver, etc. Both reduction efficiency and plating finish are good when plating powders targeting very noble metals, but when plating metal powders with base electrode potentials such as zinc, tin, nickel, cobalt, and indium, Both the reduction efficiency and the plating finish are poor, making it impractical.
しかして最近この対策としてニッケル、コバルト、亜鉛
等のメッキにおいてそれより卑なるマグネシウム、アル
ミニウムのごとき還元用金属粉と被メッキ体とを混合す
る過程もしくは両者の混合物にメッキ金属の塩化物結晶
粉末を添加し反応開始後若干の水および/又は塩酸を添
加するメッキ方法が提案されている。However, recently, as a countermeasure for this problem, when plating nickel, cobalt, zinc, etc., chloride crystal powder of the plating metal is added in the process of mixing the object to be plated with powder of a reducing metal such as magnesium or aluminum, or a mixture of both. A plating method has been proposed in which a small amount of water and/or hydrochloric acid is added after the reaction has started.
しかし上述したいずれのメッキ方法においても還元用金
属粉はメッキ金属よりも卑なものでなければならないの
で、両者の金属は必然的に異種のものであり、従つてメ
ッキ終了後の液の処理が問題となる。However, in any of the above-mentioned plating methods, the reducing metal powder must be more base than the plating metal, so the two metals are necessarily different types, and the treatment of the liquid after plating is therefore difficult. It becomes a problem.
例えば銅粉を亜鉛メッキする際銅粉とアルミニウム粉の
混合物に塩化亜鉛の結晶及び水又は希塩酸を添加してメ
ッキを行なうと下記反応式により塩化アルミニウムと塩
化亜鉛を含む溶液がメッキ処理後液として得られること
になる。For example, when zinc plating copper powder, when plating is performed by adding crystals of zinc chloride and water or dilute hydrochloric acid to a mixture of copper powder and aluminum powder, a solution containing aluminum chloride and zinc chloride is produced as a solution after plating according to the following reaction formula. You will get it.
Cu+Al+ZnCl2→Cu−Zn−1−AlCl3
+ZnCl2すなわち上記メッキ処理後液はそのままで
は銅粉の亜鉛メッキ用溶液として再利用できないのでそ
の処理が問題となり、また亜鉛の還元率が低い等の欠点
がある。Cu+Al+ZnCl2→Cu-Zn-1-AlCl3
+ZnCl2, that is, the above-mentioned post-plating solution, cannot be reused as it is as a solution for galvanizing copper powder, so its treatment becomes a problem, and there are also drawbacks such as a low reduction rate of zinc.
本発明者は、粉体のメッキについて種々検討をJ 重ね
た結果、従来の置換法とは異なる全く新規な方法を見い
だした。As a result of various studies regarding powder plating, the present inventor discovered a completely new method different from conventional substitution methods.
すなわち本発明は、メッキ媒体用金属粉(金属粉の添加
によつてメッキが進行するのでメッキ液中の金属イオン
成分と同種の金属粉をメッキ媒体・ 用金属粉と称する
)としてメッキ金属と同一の金属を用いることにより全
く新規で有利なインジウムメッキ方法を提供することを
目的とする。That is, the present invention uses metal powder for plating medium (because plating progresses by adding metal powder, metal powder of the same type as the metal ion component in the plating solution is referred to as metal powder for plating medium), which is the same as the plating metal. The object of the present invention is to provide a completely new and advantageous indium plating method by using the following metal.
以下本発明を詳しく説明する。本発明でメツキの対象と
なる被メツキ体はインジウムよりも標準電極電位が貴な
金属、例えば金、銀、白金、銅、鉛、ニツケル、コバル
ト、モリブデンのごとき金属あるいは該金属の一種以上
を含有する合金のほかに炭素質物質、金属炭化物、金属
酸化物、金属硫化物、窒化物などを上記金属あるいは合
金で予め被覆処理したものも包含する。The present invention will be explained in detail below. The object to be plated in the present invention contains a metal whose standard electrode potential is nobler than that of indium, such as gold, silver, platinum, copper, lead, nickel, cobalt, and molybdenum, or one or more of these metals. In addition to the alloys mentioned above, it also includes carbonaceous substances, metal carbides, metal oxides, metal sulfides, nitrides, etc. that have been coated in advance with the above metals or alloys.
なお、この被覆処理には金属薄層の蒸着、パラジウム析
出のごとき公知の手法が適用し得る。これらの被メツキ
体の形状については特に制限はなく、目的、用途に応じ
て粉体、線体、板体等が適宜使用される。本発明でメツ
キ媒体用金属粉として用いられるインジウム粉の粒度は
被メツキ体の種類、大きさ、さらにはこれに対するメツ
キ厚さ等を考慮して選択し得る。Note that known techniques such as metal thin layer vapor deposition and palladium precipitation can be applied to this coating treatment. There are no particular restrictions on the shape of these objects to be plated, and powders, wires, plates, etc. may be used as appropriate depending on the purpose and use. The particle size of the indium powder used as the metal powder for the plating medium in the present invention can be selected in consideration of the type and size of the object to be plated, and the thickness of the plating thereto.
例えば被メツキ体として平均粒径40μの銅粉を用い、
これに30重量パーセントのメツキを施す場合には、上
記インジウムの粒度は数μ程度が適当である。For example, using copper powder with an average particle size of 40μ as the object to be plated,
When plating 30% by weight, the particle size of the indium is suitably on the order of several microns.
インジウム粉の使用量はメツキ所要量の1.0〜1.0
5倍(重量)でよい。また本発明で用いるインジウムイ
オンを含む水溶液としては塩酸、硫酸もしくは硝酸水溶
液であつてPHが1〜3のものが好ましく、その使用量
は該水溶液中のインジウム量がメツキ所要量より過剰に
なるごとく調整するとよい。本発明では上述したごとき
被メ6ツキ体をインジウム粉およびインジウムイオンを
含む水溶液の存在下で加熱処理することによりインジウ
ムメツキを行なうものであるが、例えば被メツキ体とし
て粉体を使用する場合には、被メツキ体にインジウム粉
を混合する過程もしくは被メツキ体にインジウム粉を混
合した後、上記水溶液を添加しメツキ反応を均一に遂行
するべく攪拌下に加熱するとよい。The amount of indium powder used is 1.0 to 1.0 of the required amount of metal.
It may be 5 times (weight). The aqueous solution containing indium ions used in the present invention is preferably an aqueous solution of hydrochloric acid, sulfuric acid, or nitric acid with a pH of 1 to 3, and the amount used is such that the amount of indium in the aqueous solution is in excess of the amount required for plating. You may want to adjust it. In the present invention, indium plating is performed by heat-treating the above-mentioned object to be plated in the presence of an aqueous solution containing indium powder and indium ions. For example, when using powder as the object to be plated, It is preferable to add the above aqueous solution during the process of mixing the indium powder to the object to be plated, or after mixing the indium powder to the object to be plated, and heat the mixture with stirring to uniformly carry out the plating reaction.
メツキ反応はインジウムイオンを含む水溶液を添加し数
分間加熱することにより完遂する。The plating reaction is completed by adding an aqueous solution containing indium ions and heating for several minutes.
なお加熱は80〜100℃程度でよい。反応が終了した
メツキ生成物はP過して液分を除去した後洗浄してイン
ジウムメツキ粉体を回収する。Note that heating may be performed at a temperature of about 80 to 100°C. After the reaction, the plating product is filtered through P to remove the liquid and then washed to recover the indium plating powder.
上記沢過で得られる液分はインジウムイオンを含む水溶
液であるからそのままメツキ工程へ循環して再利用でき
る。Since the liquid obtained by the above-mentioned filtration is an aqueous solution containing indium ions, it can be recycled as it is to the plating process and reused.
本発明により上述したごとくして得られるインジウムメ
ツキ粉体は被メツキ粉体へのインジウムの析着が粒子状
とならずほぼ均一な厚さを有する被覆が形成される。In the indium plating powder obtained as described above according to the present invention, indium is not deposited on the powder to be plated in the form of particles, and a coating having a substantially uniform thickness is formed.
以上被メツキ体としてその形状が粉体の場合を説明した
が、その形状が線体あるいは板体のものについても全く
同様のことがいえる。Although the case where the object to be plated has the shape of powder has been described above, the same can be said of the object to be plated which has the shape of a wire or a plate.
但し板体の場合は加熱処理前に被メツキ板体をインジウ
ム粉が懸濁したインジウムイオンを含む水溶液中に浸漬
する点、および反応終了後の▲過が不要な点が粉体ある
いは線体の場合と異なる。本発明のメツキ方法における
反応機構は未だ明らかではないが反応過程でインジウム
粉が一旦溶解し水溶液中のインジウムイオンが被メツキ
体の表面に析出するものと推定される。However, in the case of a plate, the plate to be plated is immersed in an aqueous solution containing indium ions in which indium powder is suspended before the heat treatment, and ▲ filtration is not required after the reaction is completed. The case is different. Although the reaction mechanism in the plating method of the present invention is not yet clear, it is presumed that the indium powder is once dissolved during the reaction process, and the indium ions in the aqueous solution are precipitated on the surface of the object to be plated.
以上述べたごとく本発明によるとメツキ処理後液をその
ままメツキ工程へ循環して再利用し得るので従来法にみ
られる前述した問題点は解消される。As described above, according to the present invention, the liquid after the plating process can be directly recycled to the plating process and reused, so the above-mentioned problems found in the conventional method can be solved.
以下実施例を例示して本発明をさらに具体的に説明する
。実施例 1
平均粒径40μを有する銅粉109、平均粒径数μを有
するインジウム粉49およびインジウム濃度509/t
の塩化インジウム水溶液200dをメツキ槽に仕込み(
仕込液のPH2〜3)、攪拌下に90℃で5分間加熱し
て反応させる。The present invention will be described in more detail below by way of examples. Example 1 Copper powder 109 having an average particle size of 40 μ, indium powder 49 having an average particle size of several μ, and indium concentration 509/t
Pour 200 d of indium chloride aqueous solution into the plating tank (
The pH of the charging solution is 2 to 3), and the mixture is heated at 90° C. for 5 minutes with stirring to react.
得られた反応生成物を沢別しPH2〜3の希薄硫酸で塩
素イオンの存在が認められなくなるまで洗浄し水洗した
のち乾燥する。その結果13.989のインジウムメツ
キ粉が得られた。The obtained reaction product is separated, washed with dilute sulfuric acid of pH 2 to 3 until the presence of chloride ions is no longer recognized, washed with water, and then dried. As a result, 13.989 indium plating powder was obtained.
このインジウムメツキ粉はインジウムの白色光沢を有し
顕微鏡下の観察ではメツキ前の銅粉の粉形に相似してお
りインジウム粉そのものと思われる微小粉体は認められ
なかつた。上記沢過により得られるp液は塩化インジウ
ム水溶液であるので上記メツキ槽へ循環してメツキ反応
に再利用する。This indium plating powder had the white luster of indium, and when observed under a microscope, it resembled the powder shape of the copper powder before plating, and no fine powder that was thought to be the indium powder itself was observed. Since the p liquid obtained by the above-mentioned filtration is an aqueous indium chloride solution, it is circulated to the plating tank and reused for the plating reaction.
実施例 2
濃度2009/tの硝酸インジウム水溶液200dと平
均粒径数μのインジウム粉5f!および被メツキ体とし
て直径21L1L長さ4mmのニツケル線20本をメツ
キ槽に入れ攪拌下で85℃に加熱し5分間メツキを行な
つた。Example 2 200 d of indium nitrate aqueous solution with a concentration of 2009/t and 5 f of indium powder with an average particle size of several microns! Twenty nickel wires each having a diameter of 21L1L and a length of 4mm were placed in a plating tank as objects to be plated, heated to 85°C with stirring, and plated for 5 minutes.
以下実施例1と同様の操作を行なつた。得られたメツキ
体は400倍の顕微鏡下でもニツケル素地面の全く見ぇ
ぬ美麗なインジウムメツキ面を有していた。実施例 3
濃度2009/tの硫酸インジウム水溶液250m1中
に平均粒径数μのインジウム粉209を添加し80℃に
加熱したのち攪拌し乍ら巾2へ長さ5(17711厚さ
2mmの銅板を5分間浸漬しインジウムメツキを行なつ
た。Thereafter, the same operations as in Example 1 were performed. The resulting plating body had a beautiful indium plating surface with no nickel base surface visible even under a microscope with a magnification of 400 times. Example 3 Indium powder 209 with an average particle size of several micrometers was added to 250 ml of an indium sulfate aqueous solution with a concentration of 2009/t, heated to 80°C, and stirred. Indium plating was performed by dipping for 5 minutes.
得られたインジウムメツキ銅板は均一なメツキ面を有し
顕微鏡下でも銅素地面は全く見えなかつた。電子膜厚計
で淘徒した平均メツキ厚みは約0.1μであつた。実施
例 4
被メツキ体を325メツシユアンダ一の真ちゆう粉(C
u8O弧Zn2O%)とした以外は実施例1と同様の操
作を行なつた。The obtained indium-plated copper plate had a uniform plating surface, and the copper base surface was not visible at all even under a microscope. The average plating thickness measured by an electronic film thickness meter was approximately 0.1 μm. Example 4 The body to be plated was coated with 325 mesh under one brass powder (C
The same operation as in Example 1 was carried out except that u8O arc Zn2O%) was used.
その結果13.59のインジウムメツキ真ちゆう粉が得
られた。このメツキ粉を400倍の顕微鏡下で観察した
ところ、表面は均一にインジウムで被覆されており真ち
ゆうの黄銅色は認められなかつた。As a result, indium plating brass powder with a weight of 13.59 was obtained. When this plating powder was observed under a microscope with a magnification of 400 times, the surface was uniformly coated with indium and no brassy color was observed.
Claims (1)
を含む水溶液の存在下で加熱処理することを特徴とする
インジウムメッキ方法。1. An indium plating method characterized by heat-treating an object to be plated in the presence of an aqueous solution containing indium powder and indium ions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32081A JPS5921948B2 (en) | 1981-01-07 | 1981-01-07 | Indium plating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32081A JPS5921948B2 (en) | 1981-01-07 | 1981-01-07 | Indium plating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57114653A JPS57114653A (en) | 1982-07-16 |
| JPS5921948B2 true JPS5921948B2 (en) | 1984-05-23 |
Family
ID=11470608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32081A Expired JPS5921948B2 (en) | 1981-01-07 | 1981-01-07 | Indium plating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5921948B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6164442U (en) * | 1984-09-29 | 1986-05-01 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5497261B2 (en) | 2006-12-15 | 2014-05-21 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | Indium composition |
| JP2008265828A (en) * | 2007-04-23 | 2008-11-06 | Yamaha Motor Powered Products Co Ltd | Fuel tank |
| EP2848714B1 (en) | 2008-04-22 | 2016-11-23 | Rohm and Haas Electronic Materials LLC | Method of replenishing indium ions in indium electroplating compositions |
-
1981
- 1981-01-07 JP JP32081A patent/JPS5921948B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6164442U (en) * | 1984-09-29 | 1986-05-01 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57114653A (en) | 1982-07-16 |
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