JPS5917259A - Method for measuring semiconductor element - Google Patents

Abstract

PURPOSE:To measure the semiconductor element with high accuracy without degrading the semiconductor element by bringing a probe for detecting stylus pressure into contact with a part of the electrode of the semiconductor element or an electrode for measuring contact resistance set up electrically independently of the electrode and measuring contact resistance while changing the stylus pressure of the probe for detecting stylus pressure. CONSTITUTION:The electrode 4 for measuring contact resistance simultaneously formed electrically independently of the semiconductor element electrodes 2, 2' formed to the surface of the semiconductor element 1 is set up previously in the vicinity of the electrodes 2, 2'. When probes 3, 3' for measuring electrical characteristics are penetrated and the semiconductor element is measured, other probes 5, 5' for detecting stylus pressure being contact with the electrode 4 for measuring contact resistance at the same time are fitted. When measuring characteristics, the probes 5, 5' are penetrated simultaneously, contact resistance among the electrode 4 for measuring contact resistance and the probes 5, 5' for detecting stylus pressure is measured, and stylus pressure is increased until the resistance value reaches approximately constant low resistance value from large value. The stylus pressure of the probes 3, 3' for measuring electrical characteristics is also increased simultaneously from small value, and controlled at the stylus pressure slightly larger than the stylus pressure in case of reaching to a low saturation value.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention improves the accuracy when measuring a conductor element formed on a semiconductor substrate. Concerning ways to improve.

Generally, tens to tens of thousands of semiconductor devices are simultaneously formed on a single semiconductor substrate. Since it cannot be said that all of these semiconductor devices satisfy the required electrical characteristics, the required electrical characteristics of each of the five devices are measured and classified into non-defective and defective devices.

In other words, Fig. 1 (to explain this using al.
In the figure, 2 and 1 represent extraction electrodes of the semiconductor element 1 formed on one surface of the semiconductor substrate, and 3 and 1 represent probes for measuring electrical characteristics that are in contact with the extraction electrodes. Semiconductor element 1
is connected to a measuring machine through a 3° measuring probe, and the electrical characteristics can be measured.

As shown in FIG. 1 tb, a large number of semiconductor elements 1 are regularly arranged on one semiconductor substrate 10, and the above measurement is sequentially performed on all the elements. At this time, the pressure (stylus pressure) applied to the characteristic measuring probe 3.3' is set at the start of measurement, and then thereafter.

It remains the same for all elements. In other words, the stylus pressure.

Since it is necessary to set the optimum condition for the element to be measured first,
This may not necessarily be appropriate for other elements to be measured subsequently. Generally, the contact resistance between the probe and the electrode changes as shown in FIG. 2 depending on the needle pressure, and the relationship varies as shown in A and H depending on the surface condition of the electrode.

When measuring through a probe for measuring semiconductor device characteristics, the needle pressure of the probe is a1. Above, B is the lowest resistance value g of 5 or more? If the stylus force is lower than this, the contact resistance will become unstable and measurement accuracy will deteriorate. On the other hand, if the needle pressure is increased without limit, the probe mark on the electrode becomes larger, and the electrode metal may be peeled off, or in some cases, it may cause distortion to the semiconductor element and cause damage to the element. This is not desirable as it may cause deterioration. Therefore, it is desirable that the stylus pressure when measuring a semiconductor device be set at a point T slightly thicker than A in FIG. 2.

In FIG. 1(b), since the electrodes of a large number of semiconductor elements 1 included in the semiconductor substrate 10 are formed simultaneously, they generally exhibit fairly good uniformity. However, although it depends on the formation method, it is normal for the electrode thickness to vary by about ±10% within the same substrate. Also, its surface condition%
(Particle shape, hardness, etc. of electrode metal) may also be slightly manipulated.In such cases, if measurements are made with a constant stylus pressure, the stylus pressure may not be appropriate for some semiconductor devices. Gone.

Measurement accuracy may deteriorate, and in some cases, semiconductor elements may deteriorate.

It is an object of the present invention to overcome all of these problems and to perform measurements with high precision without causing deterioration of semiconductor elements.

In the measurement method of the present invention, when measuring the electrical characteristics of a large number of semiconductor elements formed on one principal surface of one semiconductor substrate, a ninth probe is set separately from the ninth probe for measuring the electrical characteristics of the semiconductor element. Is it a nine needle pressure detection probe? A part of the electrode of the semiconductor element or a contact resistance measuring electrode installed electrically independently from the electrode is brought into contact with the contact resistance measuring electrode, and the total contact resistance is measured while changing the needle pressure of the needle pressure detection probe, What is the stylus pressure when the measured contact resistance value reaches an almost constant low resistance value from a large value? Is the stylus pressure of the electrical characteristic measuring probe detected and the stylus pressure near this stylus pressure value? Control and measure? conduct.

Next, the present invention will be explained using examples.

FIG. 3 is a ninth plan view illustrating an embodiment of the present invention. In the figure, a semiconductor element electrode 2. formed on the surface of a semiconductor element 1. In the vicinity of electrode 2. Four electrodes for contact resistance measurement are provided which are electrically independent from z and formed at the same time. Probe for measuring electrical properties 3. When measuring the entire semiconductor element by passing through the stylus, use another stylus pressure detection probe 5 that simultaneously contacts the contact resistance measurement electrode 4. A meeting will be held. In this case, the characteristic measurement probe 3° and the needle pressure detection probe 5.5
' must be set on the same plane within a certain tolerance. Contact resistance measuring electrode 4 is element electrode 2. It can be considered that the friends in the immediate vicinity of z have the same surface condition, thickness, etc.

When measuring the characteristics, the probe 5. An electrode 4 for contact resistance measurement and a probe 5 for needle pressure detection are inserted through the groove. As shown in FIG. 2, the contact resistance is measured, and the stylus pressure increases from a large value until it reaches an almost constant low resistance (i'i (g in FIG. 2)). at the same time.

Probe for measuring electrical properties 3. The stylus pressure of the needle is also increased from the small awn value, and the stylus pressure is controlled to be slightly larger than the stylus pressure when the low saturation value is reached.

If T is set in this way, even if the electrode thickness or surface condition changes for each semiconductor element, the optimum stylus pressure can be applied following the change. Therefore, for all semiconductor devices,
Measurements are taken while the thread is threaded, so the device does not deteriorate.

FIG. 4 is a plan view of another embodiment. In this example,
The probe for needle pressure detection contacts the semiconductor element electrode, and there is a contact resistance between it and one of the probes for measuring electrical characteristics. Measure. In the figure, the contact resistance measuring electrode 4' is electrically connected to the semiconductor substrate, and a current is passed between the needle pressure detection probe 5 and the semiconductor substrate to measure the contact resistance between the probe and the electrode. That's what I do.

[Brief explanation of the drawing]

Fig. 1(a) is a plan view for explaining an example of a conventional method for measuring semiconductor devices, Fig. 1(b) is a plan view of a semiconductor substrate containing a large number of elements, and Fig. 2 is a plan view of a semiconductor substrate including stylus pressure and contact. A graph showing the relationship between resistances, FIG. 3 is a second plan view illustrating one embodiment of the present invention, and FIG. 4 is a ninth plan view illustrating another embodiment of the present invention. 1... Semiconductor element, 2. z...Element electrode, 3゜...Tip for measuring electrical characteristics, 4.4.
... Electrode for contact resistance measurement, 5. gi, q'...
...Stylus pressure detection probe, 10...Semiconductor substrate.

Claims (1)

[Claims] Electrical characteristics of semiconductor elements formed on a flat surface of a semiconductor substrate? When making a measurement, a probe for pressure detection is installed separately from the probe for measuring the characteristics of the semiconductor element, and a probe for pressure detection is attached to a part of the electrode of the semiconductor element, which is electrically different from the electrode of the semiconductor element. The stylus pressure of the probe for stylus pressure detection is measured by bringing it into contact with an independently provided electrode for measuring contact resistance. The contact resistance is measured while changing the contact resistance, and the stylus pressure is detected when the measured contact resistance value reaches an almost constant low resistance value from a large value, and the stylus pressure near this stylus pressure value is used for the characteristic measurement. A method for measuring semiconductor devices, characterized in that measurement is performed with full control of the stylus pressure of the probe.