JPS59113768A - Optical gate signal generator - Google Patents
Optical gate signal generatorInfo
- Publication number
- JPS59113768A JPS59113768A JP22132282A JP22132282A JPS59113768A JP S59113768 A JPS59113768 A JP S59113768A JP 22132282 A JP22132282 A JP 22132282A JP 22132282 A JP22132282 A JP 22132282A JP S59113768 A JPS59113768 A JP S59113768A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting element
- gate signal
- signal generator
- optical gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 24
- 238000012806 monitoring device Methods 0.000 claims description 5
- 238000012544 monitoring process Methods 0.000 abstract description 12
- 230000007547 defect Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
- H02M1/092—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the control signals being transmitted optically
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、複数のサイリスタを直並列接続した変換器の
光ゲート信号発生器に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an optical gate signal generator for a converter in which a plurality of thyristors are connected in series and parallel.
サイリスタ変換器の高電圧、大容量化に伴い、絶縁性、
耐ノイズ性、ゲートシステムの簡略化、省エネルギー化
、小形化と、電磁トリガ式よりも多くの優れた利点があ
る光トリが方式が採用されている。光トリガ方式には、
直接光トリガ方式のように光伝送路（以下ライトガイド
を記す。）で伝送したゲート信号を直接光サイリスタの
ゲートに供給する方法と、光伝送されたゲート信号を、
一旦、光電変換し、増幅した後に電気サイリスタのゲー
トに供給する間接光トリガ方式がある。発光素子は、現
在発光ダイオード、又は、レーザダイオード等が考えら
れているが、これら発光素子のオープン故障時には、発
光素子に電流が流れず、その発光素子と光結合されたサ
イリスタが、破壊、劣化現象を起こし、最悪の場合には
、システム停止を引きおこす。As the voltage and capacity of thyristor converters increase, insulation,
The optical trigger system has many advantages over the electromagnetic trigger system, such as noise resistance, simplified gate system, energy savings, and miniaturization. The optical trigger method includes
There is a method of directly supplying a gate signal transmitted through an optical transmission line (hereinafter referred to as a light guide) to the gate of an optical thyristor, as in the direct optical trigger method, and a method of supplying an optically transmitted gate signal to the gate of an optical thyristor.
There is an indirect optical trigger method in which the signal is first photoelectrically converted, amplified, and then supplied to the gate of an electric thyristor. Currently, light-emitting diodes or laser diodes are being considered as light-emitting elements, but when these light-emitting elements open failure, no current flows through the light-emitting element, and the thyristor optically coupled to the light-emitting element may be destroyed or deteriorated. In the worst case, it can cause a system outage.
そこで従来は第１図に示すように、第１の発光素子がオ
ープン故障しても第２の発光素子に電流を流し、サイリ
スタの破壊を防いでいた。Conventionally, as shown in FIG. 1, even if the first light emitting element has an open failure, current is passed through the second light emitting element to prevent the thyristor from being destroyed.
第１図において、２がサイリスタにゲート信号を供給す
る第１の発光素子、３が第１の発光素子がオープン故障
した時、ゲート信号を供給する第２の発光素子、４は非
直線素子、５は信号によって発光素子に電流を流すため
のスイッチング素子であるトランジスタ、６は増幅器、
７はパルス発生器、８はサイリスタと発光素子を結合す
るライトガイド、９はサイリスタ、１０はサイリスタの
電流酸度を下げるためのアノードリアクトル、１１，１
２．１３は抵抗、コンデンサから成る分圧回路である。In FIG. 1, 2 is a first light emitting element that supplies a gate signal to the thyristor, 3 is a second light emitting element that supplies a gate signal when the first light emitting element has an open failure, 4 is a nonlinear element, 5 is a transistor which is a switching element for causing current to flow through the light emitting element according to a signal; 6 is an amplifier;
7 is a pulse generator, 8 is a light guide that combines the thyristor and the light emitting element, 9 is the thyristor, 10 is an anode reactor for lowering the current acidity of the thyristor, 11, 1
2.13 is a voltage dividing circuit consisting of a resistor and a capacitor.
非線形素子４の動作インピーダンスは、第１の発光素子
が異常に大きなインピーダンスとなった時に第２の発光
素子３に電流が流れるように構成される。よって、第１
の発光素子が正常な場合には、第２の発光素子に電流が
流れないので、第２の発光素子は、はとんど経時劣化し
ない。The operating impedance of the nonlinear element 4 is configured such that current flows to the second light emitting element 3 when the first light emitting element has an abnormally large impedance. Therefore, the first
When the light emitting element is normal, no current flows to the second light emitting element, so the second light emitting element hardly deteriorates over time.
ところが、この回路では、第１の発光素子のオープン故
障の数が増加してくると、非直線素子の電圧降下が無視
できなくなり、発光素子に流れる電流値が徐々に減少し
てしまう。そしてついには、あるレベル以下の電流値に
なると、発光素子の出力パラツキやライトガイドの伝送
能力、サイリスタの感度等のバラツキによって、点弧で
きるサイリスタと点弧不能なサイリスタが生じることに
なる。この現象によって点弧不能なサイリスタに全電圧
がかかることになり、サイリスタの破壊、劣化が起こり
、システム停止につながってしまう。However, in this circuit, as the number of open failures in the first light emitting element increases, the voltage drop in the nonlinear element becomes impossible to ignore, and the value of the current flowing through the light emitting element gradually decreases. Finally, when the current value falls below a certain level, some thyristors will be able to fire and some will not be able to fire due to variations in the output of the light emitting element, the transmission capacity of the light guide, the sensitivity of the thyristor, etc. This phenomenon causes the full voltage to be applied to the thyristor, which cannot fire, causing destruction and deterioration of the thyristor, leading to system shutdown.
本発明の目的は、以上のような問題点を解決し、より信
頼性の高いゲート信号発生器を提供することにより、サ
イリスタ変換器の高信頼化、長寿命化を図るものである
。An object of the present invention is to solve the above-mentioned problems and provide a gate signal generator with higher reliability, thereby increasing the reliability and extending the life of a thyristor converter.
本発明は、この目的を達成するために、第１の発光素子
のオープン故障の個数を監視する監視装置を設け、第１
の発光素子のオープン故障が所定個数になった際に適切
な保護を行なうようにしたことを特徴とする。In order to achieve this object, the present invention provides a monitoring device that monitors the number of open failures in the first light emitting element, and
The present invention is characterized in that appropriate protection is provided when a predetermined number of open failures occur in the light emitting elements.
第２図に本発明の一実施例として第１の発光素子のオー
プン故障数を第３の発光素子１４で監視する場合の構成
図を示す。（ａ）は第１の発光素子のオープン故障を個
別に監視した場合で、（ｂ）は一括に監視した例である
。第３図は、第１の発光素子のオーブン故障数を電流で
検出する場合であり、１５は電流検出器、１６は故障数
監視回路である。第４図は第１の発光素子のオーブン故
障数を電圧で検出する場合であり、１７は電圧検出回路
である。第３図、第４図の（ａ） 、 （ｂ）は、第２
図と同様、それぞれ第１の発光素子のオープン故障を個
別監視した場合と、一括で監視した場合である。FIG. 2 shows a configuration diagram in which the number of open failures of the first light emitting element is monitored by the third light emitting element 14 as an embodiment of the present invention. (a) is an example in which open failures of the first light emitting elements are individually monitored, and (b) is an example in which they are collectively monitored. FIG. 3 shows a case where the number of oven failures of the first light emitting element is detected by current, where 15 is a current detector and 16 is a failure number monitoring circuit. FIG. 4 shows a case where the number of oven failures of the first light emitting element is detected by voltage, and 17 is a voltage detection circuit. (a) and (b) in Figures 3 and 4 are
As in the figure, there are cases in which open failures of the first light emitting elements are monitored individually and cases in which they are monitored all at once.
第２図において、ある第１の発光素子がオープン故障し
た場合を考える。非直線素子４と第２の発光素子３の直
列接続した回路の動作電圧は、第１の発光素子２の動作
電圧よりも高い構成となっているため、第１の発光素子
がオープン故障した場合、非直線素子４と第２の発光素
子３全通して電流が流れる。そのため、その回路に並列
に入れられた抵抗１と第３の発光素子１４の直列回路に
かかる電圧は、第１の発光素子の正常時に比べて高い電
圧となる。そこで、第３の発光素子１４の動作レベルを
第１の発光素子がオープン故障した時の電圧にすれば、
発光素子１４の動作数を監視することによって、第１の
発光素子２の故障数を把握することができる。第２図の
（ｂｌでは、第１の発光素子２のオープン故障数が増加
するにしたがい、抵抗１と第３の発光素子１４の直列回
路にかかる電圧は階段状に高くなる。第３の発光素子１
４の動作レベルを第１の発光素子のオープン故障が許容
され得る数になった時の電圧に設定することＫよって、
一括で故障検出することができる。In FIG. 2, consider a case where a certain first light emitting element has an open failure. Since the operating voltage of the circuit in which the non-linear element 4 and the second light emitting element 3 are connected in series is higher than the operating voltage of the first light emitting element 2, if the first light emitting element has an open failure, , a current flows through the nonlinear element 4 and the second light emitting element 3. Therefore, the voltage applied to the series circuit of the resistor 1 and the third light emitting element 14, which are connected in parallel to the circuit, is higher than when the first light emitting element is normal. Therefore, if the operating level of the third light emitting element 14 is set to the voltage at which the first light emitting element has an open failure,
By monitoring the number of operating light emitting elements 14, the number of failures of the first light emitting elements 2 can be ascertained. In FIG. 2 (bl), as the number of open failures in the first light emitting element 2 increases, the voltage applied to the series circuit of the resistor 1 and the third light emitting element 14 increases stepwise. Element 1
By setting the operation level of 4 to the voltage at which the number of open failures of the first light emitting element becomes tolerable,
Failures can be detected all at once.
第３図−）では、第１の発光素子２がオープン故障した
時電流が流れなくなるので、電流検出器１５で監視し、
故障数監視回路１６で許容される限界の数になった時、
信号を発生するように構成されている。故障数監視回路
１６は、例えば、電流検出器１５から出るパルス数を数
えるカウンタ回路等で容易に実現できる。第３図（ｂ）
では、サイリスタに光結合される発光素子全体を流れる
電流を検出するものである。第１の発光素子のオープン
故障数が増加してくると非線形素子４が直列に入る個数
が増加し、非線形素子による電圧降下が無視できなくな
り、電流は階段状に減少してくる。そこで電流検出器１
５は、許容されうる最低の′硫流レベルで動作するよう
に設定することによって、等価的に第１の発光素子２の
オープン故障を一括して監視することが可能となる。第
４図（ａｌの場合は、第２図の場合と同様の原理で、第
１の発光素子２の故障を検出しているものである。第１
の発光素子２がオープン故障した場合、その両端電圧が
上昇することからその電圧上昇を電圧検出器１７で検出
し、その数を故障数監視回路１６で監視している。第４
図（ｂ）は、一括して監視している例である。第５図（
ａ）は、電流検出で第１の発光素子２のオープン故障を
監視した場合を例にとり、許容され得る数故障した時に
、スイッチ１８を通電させて、予備のゲート信号発生器
を働らかせる回路を示している。第５図（ｂ）は、一括
して第１の発光素子２の故障を監視した場合であり、同
様の作用をする。予備のゲート信号発生器を働かせる場
合、同一のサイリスタに光結合される発光素子の数は、
４個である。実際にはライトガイドの４分岐したもの、
あるいは、２分岐したライトガイドをサイリスタのゲー
トで切り換えることによって可能である。In FIG. 3-), when the first light emitting element 2 has an open failure, the current stops flowing, so it is monitored by the current detector 15,
When the number of failures has reached the limit allowed by the failure number monitoring circuit 16,
configured to generate a signal. The failure number monitoring circuit 16 can be easily realized by, for example, a counter circuit that counts the number of pulses output from the current detector 15. Figure 3(b)
, the current flowing through the entire light emitting element optically coupled to the thyristor is detected. As the number of open failures in the first light emitting element increases, the number of nonlinear elements 4 connected in series increases, the voltage drop due to the nonlinear elements becomes impossible to ignore, and the current decreases stepwise. Therefore, current detector 1
5 is set to operate at the lowest permissible sulfur flow level, it becomes possible to equivalently monitor open failures of the first light emitting elements 2 all at once. In the case of FIG. 4 (al), failure of the first light emitting element 2 is detected using the same principle as in the case of FIG.
When the light emitting element 2 has an open failure, the voltage across it increases, so the voltage detector 17 detects the voltage increase, and the number of failures is monitored by the failure number monitoring circuit 16. Fourth
Figure (b) is an example of collective monitoring. Figure 5 (
Taking as an example the case where open failure of the first light emitting element 2 is monitored by current detection, a) is a circuit that energizes the switch 18 and activates the standby gate signal generator when a tolerable number of failures occur. It shows. FIG. 5(b) shows a case where failure of the first light emitting elements 2 is monitored all at once, and the same effect is obtained. When working with a spare gate signal generator, the number of light emitting elements optically coupled to the same thyristor is:
There are 4 pieces. It is actually a four-branched light guide,
Alternatively, this can be achieved by switching the bifurcated light guide using a thyristor gate.
以上発光素子が直列の場合のみについて説明したが、こ
の直列回路がいくつも並列に接続された場合にも同様な
効果が得られるのは、浩然である。Although only the case where the light emitting elements are connected in series has been described above, it is obvious that similar effects can be obtained even when a number of series circuits are connected in parallel.
また、予備のゲー！・信号発生器を働かせる場合、故障
したゲート信号発生器には電流を流さないようにするこ
とによって、電力消費を少くすることができる。その上
、予備のゲート信号発生器にも、本発明と同様な監視回
路を設ければ故障したゲート信号発生器をそっくり交換
することによって又、同様の作用を行なわせることがで
き、保守が容易になる。Also, a preliminary game! - When the signal generator is activated, power consumption can be reduced by not allowing current to flow through the failed gate signal generator. Furthermore, if a spare gate signal generator is also provided with a monitoring circuit similar to that of the present invention, it is possible to perform the same function by replacing the failed gate signal generator entirely, making maintenance easy. become.
以上述べたように、第１の発光素子のオープン故障した
個数、または等価的に電流、電圧を監視することによっ
て、発光素子の故障状態が把握でき、サイリスタ変換器
の保護が可能になり、また、予備のゲート信号発生器を
働かせることＫより、ゲート信号発生器の信頼性が格段
に良くなり、システムは停止することなく連続運転が可
能となる。As described above, by monitoring the number of open failures of the first light emitting elements or equivalently the current and voltage, the failure state of the light emitting elements can be grasped, the thyristor converter can be protected, and the thyristor converter can be protected. By using a spare gate signal generator, the reliability of the gate signal generator is significantly improved, and the system can be operated continuously without stopping.
第１図は、従来のゲート信号発生器の構成図、第２区は
、本発明の一実施例を示すゲート信号発生器の構成図、
第３図乃至第５図は本発明のそれぞれ異る他の実施例を
示すゲート信号発生器の構成図である。
１・・・抵抗、２・・・第１の発光素子、３・・・第２
の発光素子、４・・・非直線素子、５・・・トランジス
タ、６・・・増幅器、７・・・パルス発生器、８・・・
ライトガイド、９・・・サイリスタ、１０・・・アノー
ドリアクトル、１１，１２，１３・・・分圧回路、１４
…可視光発光素子、１５・・・電流検出器、１６・・・
故障数監視回路、１７・・・電圧検出器、１８・・・ス
イッチ。FIG. 1 is a block diagram of a conventional gate signal generator, and Section 2 is a block diagram of a gate signal generator showing an embodiment of the present invention.
FIGS. 3 to 5 are block diagrams of gate signal generators showing other different embodiments of the present invention. DESCRIPTION OF SYMBOLS 1...Resistor, 2...1st light emitting element, 3...2nd
4... Non-linear element, 5... Transistor, 6... Amplifier, 7... Pulse generator, 8...
Light guide, 9... Thyristor, 10... Anode reactor, 11, 12, 13... Voltage divider circuit, 14
... Visible light emitting element, 15... Current detector, 16...
Failure number monitoring circuit, 17...voltage detector, 18...switch.
Claims (4)
発光素子にそれぞれ非直線素子を介して並列接続される
第２の発光素子とから成り、前記第１の発光素子のオー
ブン故障時、該第１の発光素子に並列接続の前記第２の
発光素子からの光信号をゲート信号として用いるように
した光ゲート信号発生器において、前記第１の発光素子
のオープン故障した個数を監視する監視装置を具備した
ことを特徴とする光ゲート信号発生器。(1) Consisting of a first light emitting element connected in series and a second light emitting element connected in parallel to the first light emitting element via a nonlinear element, oven failure of the first light emitting element In an optical gate signal generator that uses an optical signal from the second light emitting element connected in parallel to the first light emitting element as a gate signal, the number of open failures of the first light emitting element is monitored. An optical gate signal generator characterized in that it is equipped with a monitoring device.
は複数個に対して並列接続される第３の発光素子の光信
号を判別することを特徴とする特許請求の範囲第１項記
載の光ゲート信号発生器。(2) The monitoring device discriminates the optical signal of a third light emitting element connected in parallel to each or a plurality of the first light emitting elements. Optical gate signal generator.
る電流又は第１の発光素子に加わる電圧の値を判別する
ことを特徴とする特許請求の範囲第１″′項記載の光ゲ
ート信号発生器。(3) The optical gate signal according to claim 1'', wherein the monitoring device determines the value of the current flowing through the first light emitting element or the voltage applied to the first light emitting element. generator.
素子にそれぞれ非直線素子を介して並発光素子に並列接
続の前記第２の発光素子からの光信号をゲート信号とし
て用いるようにした光ゲート信号発生器を少なくとも２
組設けると共に光ゲート信号発生器の第ｌの発光素子の
オーブン故障した個数を監視する監視装置をいずれかの
光ゲート信号発生器に設け、該光ゲート信号発生器の第
１の発光素子のオープン故障が所定個数に達した際に他
の光ゲート信号発生器を作動させるようにしたことを特
徴とする光ゲート信号発生器。(4) Use optical signals from a first light emitting element connected in series and a second light emitting element connected in parallel to a parallel light emitting element via a non-linear element to the first light emitting element as a gate signal. At least two optical gate signal generators
A monitoring device is provided in any of the optical gate signal generators to monitor the number of oven failures of the first light emitting elements of the optical gate signal generator, and the first light emitting element of the optical gate signal generator is opened. An optical gate signal generator characterized in that other optical gate signal generators are activated when a predetermined number of failures occur.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22132282A JPS59113768A (en) | 1982-12-17 | 1982-12-17 | Optical gate signal generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22132282A JPS59113768A (en) | 1982-12-17 | 1982-12-17 | Optical gate signal generator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59113768A true JPS59113768A (en) | 1984-06-30 |
| JPH0254025B2 JPH0254025B2 (en) | 1990-11-20 |
Family
ID=16764981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22132282A Granted JPS59113768A (en) | 1982-12-17 | 1982-12-17 | Optical gate signal generator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59113768A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006107734A1 (en) * | 2005-04-04 | 2006-10-12 | Cree, Inc. | Semiconductor light emitting circuits including light emitting diodes and four layer semiconductor shunt devices |
| US7701990B2 (en) | 2004-12-08 | 2010-04-20 | Mitsubishi Denki Kabushiki Kaisha | Laser diode pumped solid-state laser oscillator and laser diode control method of the oscillator |
| US8569974B2 (en) | 2010-11-01 | 2013-10-29 | Cree, Inc. | Systems and methods for controlling solid state lighting devices and lighting apparatus incorporating such systems and/or methods |
| US8823285B2 (en) | 2011-12-12 | 2014-09-02 | Cree, Inc. | Lighting devices including boost converters to control chromaticity and/or brightness and related methods |
| US8847516B2 (en) | 2011-12-12 | 2014-09-30 | Cree, Inc. | Lighting devices including current shunting responsive to LED nodes and related methods |
| US8901845B2 (en) | 2009-09-24 | 2014-12-02 | Cree, Inc. | Temperature responsive control for lighting apparatus including light emitting devices providing different chromaticities and related methods |
| US9131569B2 (en) | 2010-05-07 | 2015-09-08 | Cree, Inc. | AC driven solid state lighting apparatus with LED string including switched segments |
| US9398654B2 (en) | 2011-07-28 | 2016-07-19 | Cree, Inc. | Solid state lighting apparatus and methods using integrated driver circuitry |
| US9713211B2 (en) | 2009-09-24 | 2017-07-18 | Cree, Inc. | Solid state lighting apparatus with controllable bypass circuits and methods of operation thereof |
| US9839083B2 (en) | 2011-06-03 | 2017-12-05 | Cree, Inc. | Solid state lighting apparatus and circuits including LED segments configured for targeted spectral power distribution and methods of operating the same |
| US10264637B2 (en) | 2009-09-24 | 2019-04-16 | Cree, Inc. | Solid state lighting apparatus with compensation bypass circuits and methods of operation thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57132760A (en) * | 1981-02-10 | 1982-08-17 | Toshiba Corp | Gate pulse generator for high voltage thyristor converter |
-
1982
- 1982-12-17 JP JP22132282A patent/JPS59113768A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57132760A (en) * | 1981-02-10 | 1982-08-17 | Toshiba Corp | Gate pulse generator for high voltage thyristor converter |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7701990B2 (en) | 2004-12-08 | 2010-04-20 | Mitsubishi Denki Kabushiki Kaisha | Laser diode pumped solid-state laser oscillator and laser diode control method of the oscillator |
| US7535180B2 (en) | 2005-04-04 | 2009-05-19 | Cree, Inc. | Semiconductor light emitting circuits including light emitting diodes and four layer semiconductor shunt devices |
| US8283869B2 (en) | 2005-04-04 | 2012-10-09 | Cree, Inc. | Semiconductor light emitting circuits including light emitting diodes and semiconductor shunt devices |
| TWI411122B (en) * | 2005-04-04 | 2013-10-01 | Cree Inc | Semiconductor light emitting circuits including light emitting diodes and four layer semiconductor shunt devices |
| WO2006107734A1 (en) * | 2005-04-04 | 2006-10-12 | Cree, Inc. | Semiconductor light emitting circuits including light emitting diodes and four layer semiconductor shunt devices |
| US8901845B2 (en) | 2009-09-24 | 2014-12-02 | Cree, Inc. | Temperature responsive control for lighting apparatus including light emitting devices providing different chromaticities and related methods |
| US10264637B2 (en) | 2009-09-24 | 2019-04-16 | Cree, Inc. | Solid state lighting apparatus with compensation bypass circuits and methods of operation thereof |
| US9713211B2 (en) | 2009-09-24 | 2017-07-18 | Cree, Inc. | Solid state lighting apparatus with controllable bypass circuits and methods of operation thereof |
| US9131569B2 (en) | 2010-05-07 | 2015-09-08 | Cree, Inc. | AC driven solid state lighting apparatus with LED string including switched segments |
| US8569974B2 (en) | 2010-11-01 | 2013-10-29 | Cree, Inc. | Systems and methods for controlling solid state lighting devices and lighting apparatus incorporating such systems and/or methods |
| US9839083B2 (en) | 2011-06-03 | 2017-12-05 | Cree, Inc. | Solid state lighting apparatus and circuits including LED segments configured for targeted spectral power distribution and methods of operating the same |
| US9398654B2 (en) | 2011-07-28 | 2016-07-19 | Cree, Inc. | Solid state lighting apparatus and methods using integrated driver circuitry |
| US8847516B2 (en) | 2011-12-12 | 2014-09-30 | Cree, Inc. | Lighting devices including current shunting responsive to LED nodes and related methods |
| US8823285B2 (en) | 2011-12-12 | 2014-09-02 | Cree, Inc. | Lighting devices including boost converters to control chromaticity and/or brightness and related methods |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0254025B2 (en) | 1990-11-20 |
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