JPS58182817A - Low pressure CVD equipment - Google Patents
Low pressure CVD equipmentInfo
- Publication number
- JPS58182817A JPS58182817A JP6535782A JP6535782A JPS58182817A JP S58182817 A JPS58182817 A JP S58182817A JP 6535782 A JP6535782 A JP 6535782A JP 6535782 A JP6535782 A JP 6535782A JP S58182817 A JPS58182817 A JP S58182817A
- Authority
- JP
- Japan
- Prior art keywords
- foreign matter
- main pipe
- trap device
- exhaust
- matter trap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は低圧ＣＶＤ装置、特に排気糸における異物トラ
ップに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a low pressure CVD apparatus, particularly to a foreign matter trap in an exhaust line.
低圧ＣＶ ｌ）装置にあっては、デポジション時に発生
する異物（反応物）はポンプによって排気ガスと共に反
応管から排気されてポンプに送り込まれ、ポンプ中のオ
イルに混入した業物はオイル濾過システムにて濾過され
る。In the low-pressure CV l) equipment, foreign substances (reactants) generated during deposition are exhausted from the reaction tube together with exhaust gas by the pump and sent to the pump, and the substances mixed in the oil in the pump are filtered through the oil filtration system. is filtered.
しかし、このような岬造では、果物が排気糸の各パルプ
に付着し、バルブの正常動作が損なわれる。また、オイ
ル濾過システムにはフィルターが取り付けられ、異物の
濾過が成されるようになっているが、フィルターに十分
な濾過能力がないために前記ボ／グが故障し易い。However, in such a cape structure, fruit adheres to each pulp of the exhaust thread, impairing the normal operation of the valve. Further, although a filter is attached to the oil filtration system to filter out foreign substances, the bo/g is likely to malfunction because the filter does not have sufficient filtering ability.
したが−て２本発明の目的は、排気ガス中の異物による
排気系統の故障を防止することにある。Therefore, two objects of the present invention are to prevent failure of the exhaust system due to foreign matter in the exhaust gas.
以下、実施例により本発明な説明する。The present invention will be explained below with reference to Examples.
第１図は本発明の一実施例による低圧ＣＶＤ装置の概要
を示す概略図、第２図を１異物トラツプ装置の平面図、
第３図は第２図の厘一層線に沿う断面図である。この低
圧ＣＶＤ装置は、第１図で示すように反応ｔ１にソース
ガス２な送り込んで低圧ＣＶＤ処理な行なうとともに、
排気管３かも排気を行なっている。排気管３０入力段に
は真空度センサー４および異物な捕獲する異物トラップ
装置５が取り付けられている。この異物トランプ装置５
は排気管３に連結されるメインバイブロと。FIG. 1 is a schematic diagram showing an outline of a low-pressure CVD apparatus according to an embodiment of the present invention, and FIG. 2 is a plan view of a foreign matter trapping device.
FIG. 3 is a sectional view taken along the first layer line in FIG. 2. As shown in FIG. 1, this low-pressure CVD apparatus performs low-pressure CVD processing by feeding a source gas 2 into the reaction t1, and
Exhaust pipe 3 also performs exhaust. A vacuum sensor 4 and a foreign object trap device 5 for capturing foreign objects are attached to the input stage of the exhaust pipe 30. This foreign matter playing card device 5
is the main vibro connected to exhaust pipe 3.
このメインバイブロを取り囲む円筒状のカバー７とから
なり、カバー７とメインバイブロとの間に冷却空間８が
股げられている。このカバー７にを工冷却水、液体室業
等の冷媒な供給する冷媒供給管９と、排出Ｗ１０とが接
続され、メインバイブロの冷却、すなわち、メインバイ
ブロを通過する排気ガスを冷却し、異物ケメインパイプ
６の内壁向に付着捕獲するようになっている。この異物
トラップ装［５１エコ／パクトでかつ容易に取り外しが
できるようにな−ている。It consists of a cylindrical cover 7 surrounding this main vibro, and a cooling space 8 is strung between the cover 7 and the main vibro. A refrigerant supply pipe 9 for supplying refrigerant such as industrial cooling water or liquid chamber and a discharge W10 are connected to this cover 7 to cool the main vibro, that is, to cool the exhaust gas passing through the main vibro, and to cool the exhaust gas passing through the main vibro. It is adapted to adhere and capture toward the inner wall of the chemical main pipe 6. This foreign matter trap device [51 Eco/Pact is designed to be easily removed.
異物トラップ装置５を通過した異物が除去された排気ガ
スｉ工、エア弁１１．２０を通って自動圧力制御装置１
１２．ポンプ１３に移行する。モしてポンプ１３の吸引
動作によ−て吸引された排気ガスはベント管２１かも吐
出移動する。また、ポツプ１３はフィルター１４．オイ
ルタ／り１５．べ／トに連結されるべ／ト管１６等を有
する管路糸かＰ）なるオイル濾過システム１７に連結さ
れている。また、なお、１８はべ／トに連結されるべ／
ト管である。The exhaust gas from which foreign matter has been removed after passing through the foreign matter trap device 5 passes through the air valve 11.20 to the automatic pressure control device 1.
12. Moving on to pump 13. The exhaust gas sucked by the suction operation of the pump 13 is also discharged from the vent pipe 21. Also, the pop 13 has a filter 14. Oilta/ri15. The oil filtration system 17 is connected to an oil filtration system 17 by a pipe line having a pipe 16 etc. connected to the pipe P). In addition, 18 is connected to the base.
It is a pipe.
このようなＣＶＤ装置で１工、異物トラップ装置５リメ
イ／バイブロは低温となることから、排気ガス中の異物
が内壁面に付着する。この結果、異物トラップ装置５以
下の排気糸での異物の付着は生じなくなり、弁、ポツプ
な含む各装置の異物による故障は防止できることにな７
１ｏシたがって。In such a CVD apparatus, since the temperature of the foreign matter trap device 5 Remay/Vibro is low, foreign matter in the exhaust gas adheres to the inner wall surface. As a result, foreign matter will no longer adhere to the exhaust threads below the foreign matter trap device 5, and malfunctions due to foreign matter in each device, including valves and pops, can be prevented.
1 o shi want.
ＣＶＤ装置の稼動率の向上を図ることができる。It is possible to improve the operating rate of the CVD apparatus.
第１図を工率発明の一実施例による低圧ＣＶＤ装置の概
要な示す概略図、第２図Ｐま異物トラップ装置、第３図
は第２図の崖−目線に沿う断面図である。
１ 反応管、３・・・排気管、５・・異物トラップ装置
、６・・・メインパイプ、７・・カバー、８・・・冷却
空間、９・・冷媒供給管、１３・・・ポツプ、１７・・
・オイル濾過システム。
−−」
＝８４−
−１
夙−」FIG. 1 is a schematic diagram showing an overview of a low-pressure CVD apparatus according to an embodiment of the invention, FIG. 2 is a foreign matter trap device, and FIG. 3 is a sectional view taken along the cliff line of FIG. 2. 1 Reaction tube, 3... Exhaust pipe, 5... Foreign matter trap device, 6... Main pipe, 7... Cover, 8... Cooling space, 9... Refrigerant supply pipe, 13... Pop, 17...
・Oil filtration system. --" =84- -1 夙-"
Claims (1)
Ｖ ｌ）装置において、前記排気糸の前段部に異物トラ
ップ装置ｌｌ配設したことを特徴とする低圧ＣＶＤ装置
。1. Low pressure C made by installing an oil filtration device etc. in the exhaust system
Vl) A low-pressure CVD apparatus, characterized in that a foreign matter trap device ll is disposed at the front stage of the exhaust thread.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6535782A JPS58182817A (en) | 1982-04-21 | 1982-04-21 | Low pressure CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6535782A JPS58182817A (en) | 1982-04-21 | 1982-04-21 | Low pressure CVD equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58182817A true JPS58182817A (en) | 1983-10-25 |
Family
ID=13284619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6535782A Pending JPS58182817A (en) | 1982-04-21 | 1982-04-21 | Low pressure CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58182817A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5250092A (en) * | 1991-08-22 | 1993-10-05 | Nec Corporation | Exhaust apparatus for epitaxial growth system |
| EP0913503A1 (en) * | 1997-10-24 | 1999-05-06 | Leybold Systems GmbH | Apparatus for removing dust from a gas stream |
| KR100247630B1 (en) * | 1996-12-18 | 2000-03-15 | 김영환 | Particulate Removal System to Semiconductor Manufacturing Process |
-
1982
- 1982-04-21 JP JP6535782A patent/JPS58182817A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5250092A (en) * | 1991-08-22 | 1993-10-05 | Nec Corporation | Exhaust apparatus for epitaxial growth system |
| KR100247630B1 (en) * | 1996-12-18 | 2000-03-15 | 김영환 | Particulate Removal System to Semiconductor Manufacturing Process |
| EP0913503A1 (en) * | 1997-10-24 | 1999-05-06 | Leybold Systems GmbH | Apparatus for removing dust from a gas stream |
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