JPS5680195A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS5680195A JPS5680195A JP15866379A JP15866379A JPS5680195A JP S5680195 A JPS5680195 A JP S5680195A JP 15866379 A JP15866379 A JP 15866379A JP 15866379 A JP15866379 A JP 15866379A JP S5680195 A JPS5680195 A JP S5680195A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- grown
- differs
- grooves
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To oscillate laser rays with two different wavelengths from one element by a method wherein an N type three layer semiconductor is divided into the first and second regions at boundary surfaces, and the energy gaps of each region are made differ. CONSTITUTION:N type InGaP layers 23, 33, 43, composition thereof each differs, are grown on a semiconductor insulating GaAs substrate 13, and SiO2 is grown on the layers. Grooves 93 are formed according to photo-etching technique, and N- InGaAsP layers 23', 33', 43', composition thereof each differs, are grown in the grooves 93 according to a slide boat method. P<+> layers 63 and P layers 63' are made up at the boundary surfaces of the layers 43, 33, 23 and the layers 43', 33', 23'. The whole is cut in A-A' and B-B', thus forming a laser element. Consequently, two pairs of TJS lasers, energy gaps thereof differ, are constituted, and laser rays with two wavelengths are radiated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15866379A JPS5680195A (en) | 1979-12-05 | 1979-12-05 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15866379A JPS5680195A (en) | 1979-12-05 | 1979-12-05 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5680195A true JPS5680195A (en) | 1981-07-01 |
Family
ID=15676626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15866379A Pending JPS5680195A (en) | 1979-12-05 | 1979-12-05 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5680195A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58199583A (en) * | 1982-05-15 | 1983-11-19 | Masayoshi Umeno | Multiple wavelength semiconductor laser |
| US4933302A (en) * | 1989-04-19 | 1990-06-12 | International Business Machines Corporation | Formation of laser mirror facets and integration of optoelectronics |
| US6798794B2 (en) | 2001-11-26 | 2004-09-28 | Sony Corporation | Semiconductor laser device, astigmatic correction plate used therefor and method of arranging the astigmatic correction plate |
-
1979
- 1979-12-05 JP JP15866379A patent/JPS5680195A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58199583A (en) * | 1982-05-15 | 1983-11-19 | Masayoshi Umeno | Multiple wavelength semiconductor laser |
| US4933302A (en) * | 1989-04-19 | 1990-06-12 | International Business Machines Corporation | Formation of laser mirror facets and integration of optoelectronics |
| US6798794B2 (en) | 2001-11-26 | 2004-09-28 | Sony Corporation | Semiconductor laser device, astigmatic correction plate used therefor and method of arranging the astigmatic correction plate |
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