JPS5640996B2 - - Google Patents
Info
- Publication number
- JPS5640996B2 JPS5640996B2 JP7033079A JP7033079A JPS5640996B2 JP S5640996 B2 JPS5640996 B2 JP S5640996B2 JP 7033079 A JP7033079 A JP 7033079A JP 7033079 A JP7033079 A JP 7033079A JP S5640996 B2 JPS5640996 B2 JP S5640996B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/06—LPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Weting (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7033079A JPS55162288A (en) | 1979-06-04 | 1979-06-04 | Manufacture of buried type photosemiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7033079A JPS55162288A (en) | 1979-06-04 | 1979-06-04 | Manufacture of buried type photosemiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55162288A JPS55162288A (en) | 1980-12-17 |
| JPS5640996B2 true JPS5640996B2 (en) | 1981-09-25 |
Family
ID=13428304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7033079A Granted JPS55162288A (en) | 1979-06-04 | 1979-06-04 | Manufacture of buried type photosemiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55162288A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160351392A1 (en) * | 2014-03-11 | 2016-12-01 | Furukawa Electric Co., Ltd. | Semiconductor device |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5662386A (en) * | 1979-10-29 | 1981-05-28 | Hitachi Ltd | Manufacture of semiconductor device |
| GB2114808B (en) * | 1981-12-01 | 1985-10-09 | Standard Telephones Cables Ltd | Semiconductor laser manufacture |
| GB2115608B (en) * | 1982-02-24 | 1985-10-30 | Plessey Co Plc | Semi-conductor lasers |
| JPS63284878A (en) * | 1987-04-30 | 1988-11-22 | シーメンス、アクチエンゲゼルシヤフト | Method for manufacturing laser diode with buried active layer |
| KR0141057B1 (en) * | 1994-11-19 | 1998-07-15 | 이헌조 | Semiconductor laser manufacturing method |
| KR100567346B1 (en) * | 2004-03-23 | 2006-04-04 | 학교법인 포항공과대학교 | Al epispheric epitaxial etchant and method of manufacturing semiconductor device using same |
-
1979
- 1979-06-04 JP JP7033079A patent/JPS55162288A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160351392A1 (en) * | 2014-03-11 | 2016-12-01 | Furukawa Electric Co., Ltd. | Semiconductor device |
| US9960572B2 (en) * | 2014-03-11 | 2018-05-01 | Furukawa Electric Co., Ltd. | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55162288A (en) | 1980-12-17 |