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JPS5516480A - Insulating gate electrostatic effect transistor and semiconductor integrated circuit device - Google Patents

Insulating gate electrostatic effect transistor and semiconductor integrated circuit device

Info

Publication number
JPS5516480A
JPS5516480A JP8981978A JP8981978A JPS5516480A JP S5516480 A JPS5516480 A JP S5516480A JP 8981978 A JP8981978 A JP 8981978A JP 8981978 A JP8981978 A JP 8981978A JP S5516480 A JPS5516480 A JP S5516480A
Authority
JP
Japan
Prior art keywords
area
integrated circuit
effect transistor
semiconductor integrated
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8981978A
Other languages
Japanese (ja)
Inventor
Kenji Miura
Takashi Asaoka
Takashi Watanabe
Takashi Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP8981978A priority Critical patent/JPS5516480A/en
Publication of JPS5516480A publication Critical patent/JPS5516480A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To minimize consumption power by arranging a pseudo-channel area in parallel with a channel area extending between source area and drain area.
CONSTITUTION: A pseudo-channel area CH' having the same N type as source area S and drain area D is formed between the said areas with a channel area CH left on insulation layer I and connected thereto on counter side to the insulation layer I. In this case, the channel area CH and the pseudo-channel area CH' comprise introducing N type impurity into a substrate 1 through its main side and then introducing P type impurity into the substrate 1 through its main side.
COPYRIGHT: (C)1980,JPO&Japio
JP8981978A 1978-07-21 1978-07-21 Insulating gate electrostatic effect transistor and semiconductor integrated circuit device Pending JPS5516480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8981978A JPS5516480A (en) 1978-07-21 1978-07-21 Insulating gate electrostatic effect transistor and semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8981978A JPS5516480A (en) 1978-07-21 1978-07-21 Insulating gate electrostatic effect transistor and semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5516480A true JPS5516480A (en) 1980-02-05

Family

ID=13981349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8981978A Pending JPS5516480A (en) 1978-07-21 1978-07-21 Insulating gate electrostatic effect transistor and semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5516480A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6183087U (en) * 1984-11-05 1986-06-02
JPS61160975A (en) * 1985-01-08 1986-07-21 Matsushita Electric Ind Co Ltd MOS field effect transistor
JP2007158105A (en) * 2005-12-06 2007-06-21 Matsushita Electric Ind Co Ltd Integrated circuit and manufacturing method thereof
JP2013247347A (en) * 2012-05-29 2013-12-09 Canon Inc Semiconductor device and manufacturing method of the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50105276A (en) * 1974-01-25 1975-08-19
JPS52115668A (en) * 1976-03-25 1977-09-28 Sony Corp Field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50105276A (en) * 1974-01-25 1975-08-19
JPS52115668A (en) * 1976-03-25 1977-09-28 Sony Corp Field effect transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6183087U (en) * 1984-11-05 1986-06-02
JPS61160975A (en) * 1985-01-08 1986-07-21 Matsushita Electric Ind Co Ltd MOS field effect transistor
JP2007158105A (en) * 2005-12-06 2007-06-21 Matsushita Electric Ind Co Ltd Integrated circuit and manufacturing method thereof
JP2013247347A (en) * 2012-05-29 2013-12-09 Canon Inc Semiconductor device and manufacturing method of the same

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