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JPS54152464A - Preventing method for occurrence of crystal defect of silicon single-crystal substrate - Google Patents

Preventing method for occurrence of crystal defect of silicon single-crystal substrate

Info

Publication number
JPS54152464A
JPS54152464A JP6149578A JP6149578A JPS54152464A JP S54152464 A JPS54152464 A JP S54152464A JP 6149578 A JP6149578 A JP 6149578A JP 6149578 A JP6149578 A JP 6149578A JP S54152464 A JPS54152464 A JP S54152464A
Authority
JP
Japan
Prior art keywords
approximately
substrate
crystal
oxidized
atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6149578A
Other languages
Japanese (ja)
Inventor
Toshiyuki Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6149578A priority Critical patent/JPS54152464A/en
Publication of JPS54152464A publication Critical patent/JPS54152464A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To prevent the occurrence of a crystal defect by forming diffusion strain by diffusing atoms, different in atom radius of Si, to the circumference of the other main surface of a Si single-crystal substrate in a belt shape.
CONSTITUTION: On the top and reverse surfaces of a Si single-crystal substrate, oxidized films 2 and 3 are formed. In oxidized film 2 on a main surface other than a surface where a semiconductor element is to be formed, two opening parts 4 and 5 of approximately 250μm in width are concentrically formed, at an interval of approximately 50μm, approximately 4mm away inward from th external circumference. Through opening parts 4 and 5, atoms, differing in atom radius from Si, such as Sb atoms are thermally diffused to a surface density of 1019/cm3 and a depth of 5μm approximately so as to form diffusion regions 6 and 7. In consequence, diffusion strain is generated in the Si substrate. Then, oxidized films 2 and 3 are removed. The substrate formed by the above method is oxidized for about thirty minutes in a vapor atmosphere of 1140°C. Consequently, a region without strip lines is expanded to a degree of 90%, so that great improvement can be realized.
COPYRIGHT: (C)1979,JPO&Japio
JP6149578A 1978-05-22 1978-05-22 Preventing method for occurrence of crystal defect of silicon single-crystal substrate Pending JPS54152464A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6149578A JPS54152464A (en) 1978-05-22 1978-05-22 Preventing method for occurrence of crystal defect of silicon single-crystal substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6149578A JPS54152464A (en) 1978-05-22 1978-05-22 Preventing method for occurrence of crystal defect of silicon single-crystal substrate

Publications (1)

Publication Number Publication Date
JPS54152464A true JPS54152464A (en) 1979-11-30

Family

ID=13172725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6149578A Pending JPS54152464A (en) 1978-05-22 1978-05-22 Preventing method for occurrence of crystal defect of silicon single-crystal substrate

Country Status (1)

Country Link
JP (1) JPS54152464A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7041575B2 (en) 2003-04-29 2006-05-09 Micron Technology, Inc. Localized strained semiconductor on insulator
US7045874B2 (en) 2003-05-07 2006-05-16 Micron Technology, Inc. Micromechanical strained semiconductor by wafer bonding
US7198974B2 (en) * 2003-03-05 2007-04-03 Micron Technology, Inc. Micro-mechanically strained semiconductor film
US7271445B2 (en) 2003-05-21 2007-09-18 Micron Technology, Inc. Ultra-thin semiconductors bonded on glass substrates
US7439158B2 (en) 2003-07-21 2008-10-21 Micron Technology, Inc. Strained semiconductor by full wafer bonding
US7501329B2 (en) 2003-05-21 2009-03-10 Micron Technology, Inc. Wafer gettering using relaxed silicon germanium epitaxial proximity layers
US7528463B2 (en) 2003-05-21 2009-05-05 Micron Technolgy, Inc. Semiconductor on insulator structure
US7544584B2 (en) 2006-02-16 2009-06-09 Micron Technology, Inc. Localized compressive strained semiconductor

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7405444B2 (en) 2003-03-05 2008-07-29 Micron Technology, Inc. Micro-mechanically strained semiconductor film
US7198974B2 (en) * 2003-03-05 2007-04-03 Micron Technology, Inc. Micro-mechanically strained semiconductor film
US7202530B2 (en) 2003-03-05 2007-04-10 Micron Technology, Inc. Micro-mechanically strained semiconductor film
US7041575B2 (en) 2003-04-29 2006-05-09 Micron Technology, Inc. Localized strained semiconductor on insulator
US7045874B2 (en) 2003-05-07 2006-05-16 Micron Technology, Inc. Micromechanical strained semiconductor by wafer bonding
US7482190B2 (en) 2003-05-07 2009-01-27 Micron Technology, Inc. Micromechanical strained semiconductor by wafer bonding
US7271445B2 (en) 2003-05-21 2007-09-18 Micron Technology, Inc. Ultra-thin semiconductors bonded on glass substrates
US7273788B2 (en) 2003-05-21 2007-09-25 Micron Technology, Inc. Ultra-thin semiconductors bonded on glass substrates
US7501329B2 (en) 2003-05-21 2009-03-10 Micron Technology, Inc. Wafer gettering using relaxed silicon germanium epitaxial proximity layers
US7504310B2 (en) 2003-05-21 2009-03-17 Micron Technology, Inc. Semiconductors bonded on glass substrates
US7528463B2 (en) 2003-05-21 2009-05-05 Micron Technolgy, Inc. Semiconductor on insulator structure
US7439158B2 (en) 2003-07-21 2008-10-21 Micron Technology, Inc. Strained semiconductor by full wafer bonding
US7544584B2 (en) 2006-02-16 2009-06-09 Micron Technology, Inc. Localized compressive strained semiconductor

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