JPS54152464A - Preventing method for occurrence of crystal defect of silicon single-crystal substrate - Google Patents
Preventing method for occurrence of crystal defect of silicon single-crystal substrateInfo
- Publication number
- JPS54152464A JPS54152464A JP6149578A JP6149578A JPS54152464A JP S54152464 A JPS54152464 A JP S54152464A JP 6149578 A JP6149578 A JP 6149578A JP 6149578 A JP6149578 A JP 6149578A JP S54152464 A JPS54152464 A JP S54152464A
- Authority
- JP
- Japan
- Prior art keywords
- approximately
- substrate
- crystal
- oxidized
- atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To prevent the occurrence of a crystal defect by forming diffusion strain by diffusing atoms, different in atom radius of Si, to the circumference of the other main surface of a Si single-crystal substrate in a belt shape.
CONSTITUTION: On the top and reverse surfaces of a Si single-crystal substrate, oxidized films 2 and 3 are formed. In oxidized film 2 on a main surface other than a surface where a semiconductor element is to be formed, two opening parts 4 and 5 of approximately 250μm in width are concentrically formed, at an interval of approximately 50μm, approximately 4mm away inward from th external circumference. Through opening parts 4 and 5, atoms, differing in atom radius from Si, such as Sb atoms are thermally diffused to a surface density of 1019/cm3 and a depth of 5μm approximately so as to form diffusion regions 6 and 7. In consequence, diffusion strain is generated in the Si substrate. Then, oxidized films 2 and 3 are removed. The substrate formed by the above method is oxidized for about thirty minutes in a vapor atmosphere of 1140°C. Consequently, a region without strip lines is expanded to a degree of 90%, so that great improvement can be realized.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6149578A JPS54152464A (en) | 1978-05-22 | 1978-05-22 | Preventing method for occurrence of crystal defect of silicon single-crystal substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6149578A JPS54152464A (en) | 1978-05-22 | 1978-05-22 | Preventing method for occurrence of crystal defect of silicon single-crystal substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54152464A true JPS54152464A (en) | 1979-11-30 |
Family
ID=13172725
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6149578A Pending JPS54152464A (en) | 1978-05-22 | 1978-05-22 | Preventing method for occurrence of crystal defect of silicon single-crystal substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54152464A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7041575B2 (en) | 2003-04-29 | 2006-05-09 | Micron Technology, Inc. | Localized strained semiconductor on insulator |
US7045874B2 (en) | 2003-05-07 | 2006-05-16 | Micron Technology, Inc. | Micromechanical strained semiconductor by wafer bonding |
US7198974B2 (en) * | 2003-03-05 | 2007-04-03 | Micron Technology, Inc. | Micro-mechanically strained semiconductor film |
US7271445B2 (en) | 2003-05-21 | 2007-09-18 | Micron Technology, Inc. | Ultra-thin semiconductors bonded on glass substrates |
US7439158B2 (en) | 2003-07-21 | 2008-10-21 | Micron Technology, Inc. | Strained semiconductor by full wafer bonding |
US7501329B2 (en) | 2003-05-21 | 2009-03-10 | Micron Technology, Inc. | Wafer gettering using relaxed silicon germanium epitaxial proximity layers |
US7528463B2 (en) | 2003-05-21 | 2009-05-05 | Micron Technolgy, Inc. | Semiconductor on insulator structure |
US7544584B2 (en) | 2006-02-16 | 2009-06-09 | Micron Technology, Inc. | Localized compressive strained semiconductor |
-
1978
- 1978-05-22 JP JP6149578A patent/JPS54152464A/en active Pending
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7405444B2 (en) | 2003-03-05 | 2008-07-29 | Micron Technology, Inc. | Micro-mechanically strained semiconductor film |
US7198974B2 (en) * | 2003-03-05 | 2007-04-03 | Micron Technology, Inc. | Micro-mechanically strained semiconductor film |
US7202530B2 (en) | 2003-03-05 | 2007-04-10 | Micron Technology, Inc. | Micro-mechanically strained semiconductor film |
US7041575B2 (en) | 2003-04-29 | 2006-05-09 | Micron Technology, Inc. | Localized strained semiconductor on insulator |
US7045874B2 (en) | 2003-05-07 | 2006-05-16 | Micron Technology, Inc. | Micromechanical strained semiconductor by wafer bonding |
US7482190B2 (en) | 2003-05-07 | 2009-01-27 | Micron Technology, Inc. | Micromechanical strained semiconductor by wafer bonding |
US7271445B2 (en) | 2003-05-21 | 2007-09-18 | Micron Technology, Inc. | Ultra-thin semiconductors bonded on glass substrates |
US7273788B2 (en) | 2003-05-21 | 2007-09-25 | Micron Technology, Inc. | Ultra-thin semiconductors bonded on glass substrates |
US7501329B2 (en) | 2003-05-21 | 2009-03-10 | Micron Technology, Inc. | Wafer gettering using relaxed silicon germanium epitaxial proximity layers |
US7504310B2 (en) | 2003-05-21 | 2009-03-17 | Micron Technology, Inc. | Semiconductors bonded on glass substrates |
US7528463B2 (en) | 2003-05-21 | 2009-05-05 | Micron Technolgy, Inc. | Semiconductor on insulator structure |
US7439158B2 (en) | 2003-07-21 | 2008-10-21 | Micron Technology, Inc. | Strained semiconductor by full wafer bonding |
US7544584B2 (en) | 2006-02-16 | 2009-06-09 | Micron Technology, Inc. | Localized compressive strained semiconductor |
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