JPH118841A - Protection circuit - Google Patents
Protection circuitInfo
- Publication number
- JPH118841A JPH118841A JP9160241A JP16024197A JPH118841A JP H118841 A JPH118841 A JP H118841A JP 9160241 A JP9160241 A JP 9160241A JP 16024197 A JP16024197 A JP 16024197A JP H118841 A JPH118841 A JP H118841A
- Authority
- JP
- Japan
- Prior art keywords
- protection circuit
- diodes
- circuit
- frequency amplifier
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002159 abnormal effect Effects 0.000 abstract description 9
- 230000002542 deteriorative effect Effects 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 9
- 230000007175 bidirectional communication Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Two-Way Televisions, Distribution Of Moving Picture Or The Like (AREA)
- Emergency Protection Circuit Devices (AREA)
- Amplifiers (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、ケーブルテレビ
(CATV)等で使用されている高周波増幅回路のサー
ジ電圧に対する保護回路に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a protection circuit for a surge voltage of a high-frequency amplifier circuit used in a cable television (CATV) or the like.
【0002】[0002]
【従来の技術】CATVの伝送線路等で使用されている
高周波増幅回路は空中に設けられた中継器内や分岐増幅
器、幹線増幅器内に設けられているため、接続された同
軸ケーブルや電力線を介し、雷や誘導雷により異常な高
電圧が進入し易く、このような異常サージ電圧から増幅
回路素子を保護するための保護回路がその直前あるいは
直後に設けられている。このような保護回路として、一
般的にはアレスターやコイルを使用する方法やまたダイ
オードを使用する方法等があるが、ダイオードを組合せ
た回路がその阻止特性が優れているために多く使用され
ている。このような回路としては図7(a)に示すよう
に高周波増幅回路1の出力2(あるいは入力6)と接地
との間に、ダイオード25,25を互いに極性が逆方向
となるように並列に接続して構成したものや、図7
(b)に示すように(a)の構成に加え双方のダイオー
ド25,25に電源26,27により逆バイアスをかけ
た回路を設けて構成されている。尚、3は出力端子であ
る。2. Description of the Related Art Since a high-frequency amplifier circuit used in a CATV transmission line or the like is provided in a repeater provided in the air, a branch amplifier, or a main amplifier, it is connected via a coaxial cable or a power line connected thereto. An abnormal high voltage is likely to enter due to lightning or induced lightning, and a protection circuit for protecting the amplifier circuit element from such an abnormal surge voltage is provided immediately before or immediately after the protection circuit. As such a protection circuit, there are generally a method using an arrester or a coil, a method using a diode, and the like, but a circuit combining a diode is often used because of its excellent blocking characteristics. . As such a circuit, as shown in FIG. 7A, diodes 25 are connected in parallel between the output 2 (or input 6) of the high-frequency amplifier circuit 1 and the ground so that the polarities are opposite to each other. FIG.
As shown in (b), in addition to the configuration of (a), a circuit is provided in which both diodes 25, 25 are reverse-biased by power supplies 26, 27. Reference numeral 3 is an output terminal.
【0003】このような回路を設けることで、サージ電
圧のうち正の高電圧はエネルギーを信号線路から接地部
へ放出させ、負の高電圧は逆に接地部より信号線路へ流
れ込ませることで両極性で発生する振動性の異常高電圧
から高周波増幅回路を保護している。尚、上記(a)に
示すの保護回路は、異常サージ電圧の除去効果は十分あ
るものの、線路の歪特性を良好に保つことが難しく、ビ
ート妨害や混変調の劣化等を招く原因となるため、
(b)に示すように、ダイオード25,25に夫々逆バ
イアスを設けることで、これらの歪特性の改善を図って
いる。By providing such a circuit, a positive high voltage among the surge voltages causes energy to be released from the signal line to the ground, and a negative high voltage causes the energy to flow from the ground to the signal line. It protects the high-frequency amplifier circuit from abnormal high voltage generated by vibration. Although the protection circuit shown in (a) has a sufficient effect of removing an abnormal surge voltage, it is difficult to maintain good distortion characteristics of the line, and this may cause beat disturbance and deterioration of cross modulation. ,
As shown in (b), by providing a reverse bias to each of the diodes 25, 25, these distortion characteristics are improved.
【0004】[0004]
【発明が解決しようとする課題】CATVの中でも双方
向通信を可能とした線路では、伝送帯域が例えば5MH
z〜1000MHzと広く、この場合、端末からの電話
信号やデータ信号の帯域が5MHz〜50MHzであ
り、テレビ信号等のセンター局からの信号は50MHz
〜1000MHzとなっている。従って、高周波増幅回
路はこの50MHz〜1000MHzの帯域の周波数を
増幅することになるため、保護回路を設けた場合、10
00MHzの高域に至るまで広帯域に電気的特性を劣化
させないようにしなければならない。しかし、上記従来
の保護回路はこの帯域に於て良好な特性を保つことが難
しく、特に1000MHzに近い高域においてインピー
ダンス特性の低下を招き、その結果、利得の低下や電圧
定在波比(VSWR)の劣化等を生じていた。そのた
め、保護回路の特性の改善が求められていた。そこで本
発明の課題は、1000MHzの高域に至るまで高周波
増幅回路の電気的特性を劣化させる事無く異常サージ電
圧を除去する保護回路を提供することにある。[0005] Among the CATV lines, a line that enables bidirectional communication has a transmission band of, for example, 5 MHz.
In this case, the band of the telephone signal and the data signal from the terminal is 5 MHz to 50 MHz, and the signal from the center station such as the television signal is 50 MHz.
10001000 MHz. Therefore, the high frequency amplifier circuit amplifies the frequency in the band of 50 MHz to 1000 MHz.
It is necessary to prevent the electrical characteristics from deteriorating over a wide band up to the high frequency range of 00 MHz. However, it is difficult for the above-described conventional protection circuit to maintain good characteristics in this band, and in particular, impedance characteristics are reduced in a high frequency range close to 1000 MHz. )). Therefore, improvement of the characteristics of the protection circuit has been demanded. Therefore, an object of the present invention is to provide a protection circuit for removing an abnormal surge voltage without deteriorating the electrical characteristics of a high-frequency amplifier circuit up to a high frequency band of 1000 MHz.
【0005】[0005]
【課題を解決するための手段】上記課題を解決するた
め、請求項1の発明による保護回路は、高周波増幅回路
の入力又は出力と接地との間に、2個のダイオードを互
いに極性が逆方向となるよう並列接続した組を少なくと
も2組直列接続して構成される。In order to solve the above-mentioned problems, a protection circuit according to the first aspect of the present invention comprises two diodes connected between an input or output of a high-frequency amplifier circuit and a ground, the polarities being opposite to each other. At least two sets connected in parallel are connected in series.
【0006】請求項2の発明による保護回路は、高周波
増幅回路の入力又は出力と接地との間に、少なくとも2
個のダイオードを順方向に直列接続した組を、2組互い
に極性が逆方向となるよう並列接続して構成される。According to a second aspect of the present invention, at least two protection circuits are provided between the input or output of the high-frequency amplifier circuit and the ground.
Two sets of diodes connected in series in the forward direction are connected in parallel so that the polarities are opposite to each other.
【0007】[0007]
【発明の実施の形態】以下本発明を具体化した実施の形
態の1例を図面を基に詳細に説明する。図1は保護回路
の構成図であり、保護回路は高周波増幅回路1の出力線
2と接地との間に設けられ、(a)は保護回路4が、ダ
イオード4aを2個1組として互いに極性が逆方向とな
るよう並列に接続した組を3組直列接続し構成してい
る。また(b)に示すように保護回路5がダイオード5
aを3個順方向に直列接続したものを2組極性が逆方向
となるように並列接続して構成しても同様の特性を得る
ことができる。尚、(a)のダイオードの組数や(b)
のダイオードの直列接続数は、3組或いは3個に限定す
るものではなく、2組あるいは2個以上であれば良い。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will now be described in detail with reference to the drawings. FIG. 1 is a configuration diagram of a protection circuit. The protection circuit is provided between an output line 2 of a high-frequency amplifier circuit 1 and a ground. FIG. Are connected in series so as to be in opposite directions. In addition, as shown in FIG.
A similar characteristic can be obtained even if three sets of a are connected in series in the forward direction and two sets are connected in parallel so that the polarities are opposite. In addition, (a) the number of diode sets and (b)
The number of diodes connected in series is not limited to three or three, but may be two or two or more.
【0008】図2は、この保護回路を具体的に双方向通
信を可能とするCATV線路に於て、幹線から契約者の
家庭に引き込まれた引き込み口に設置される増幅器に適
用した場合のブロック図を示している。この増幅器10
は、内部の高周波増幅回路14を有し、この高周波増幅
回路14に端末を通して入来する誘導雷による異常サー
ジ電圧から保護するために本発明の保護回路を高周波増
幅回路14の出力側に設けている。図において、11は
入力端子、12はローパスフィルタ、13,16はハイ
パスフィルタ、17は電源分離フィルタ、18は電源回
路、20は出力端子、21はセンター局、22はアンテ
ナであり、保護回路4が高周波増幅回路14の出力線と
接地との間に設けられている。FIG. 2 is a block diagram showing a case where this protection circuit is applied to an amplifier installed at a service entrance drawn from a trunk line to a subscriber's home in a CATV line capable of bidirectional communication. FIG. This amplifier 10
Has an internal high-frequency amplifier circuit 14, and a protection circuit of the present invention is provided on the output side of the high-frequency amplifier circuit 14 in order to protect the high-frequency amplifier circuit 14 from abnormal surge voltage due to induced lightning that enters through a terminal. I have. In the figure, 11 is an input terminal, 12 is a low-pass filter, 13 and 16 are high-pass filters, 17 is a power supply separation filter, 18 is a power supply circuit, 20 is an output terminal, 21 is a center station, 22 is an antenna, and the protection circuit 4 Is provided between the output line of the high-frequency amplifier circuit 14 and the ground.
【0009】ローパスフィルタ12は端末からの電話信
号やデータ信号等をセンター局21へ送信するために高
周波増幅回路14とは並列に設けられているもので、セ
ンター局21からのテレビ信号等の高周波信号が高周波
増幅回路14により増幅されるようになっている。尚、
センター局21の方向からのサージ電圧の保護はコイル
等で構成された公知の保護回路が高周波増幅回路14の
入力側に設けられている(図示せず)が、その保護回路
も上記ダイオードからなる構成としても良い。The low-pass filter 12 is provided in parallel with the high-frequency amplifier circuit 14 for transmitting telephone signals, data signals, and the like from terminals to the center station 21, and transmits high-frequency signals such as television signals from the center station 21. The signal is amplified by the high frequency amplifier circuit 14. still,
In order to protect the surge voltage from the direction of the center station 21, a known protection circuit composed of a coil or the like is provided on the input side of the high-frequency amplifier circuit 14 (not shown), and the protection circuit also includes the diode. It is good also as composition.
【0010】図3〜図6は図2の増幅器10の諸特性を
示すもので、上記保護回路のダイオード数の違いによる
特性の変化を示している。先ず、図3は歪特性を示して
いるもので、Aは110MHz,Bは220MHz,C
は520MHz,Dは620MHz,Eは720MHz
の夫々の周波数における特性を示している。横軸は保護
回路のダイオードの組の直列接続数で1は図7(a)に
示す従来の保護回路を示し、2,3は2組,3組の場合
を示し本発明の保護回路を示している。また無は保護回
路無しの場合の特性である。図示するように、ダイオー
ドの組を2組以上直列接続して構成する保護回路を設け
た場合の歪特性はダイオード1組に比べ保護回路無しの
特性に近く、歪み特性を劣化させることが無い。そのた
め、図7(b)の如くダイオードに逆バイアスを設ける
必要も無い。FIGS. 3 to 6 show various characteristics of the amplifier 10 shown in FIG. 2, and show changes in characteristics of the protection circuit due to a difference in the number of diodes. First, FIG. 3 shows distortion characteristics, where A is 110 MHz, B is 220 MHz, C
Is 520 MHz, D is 620 MHz, E is 720 MHz
At each frequency. The horizontal axis indicates the number of series-connected diodes of the protection circuit, where 1 indicates the conventional protection circuit shown in FIG. 7A, 2 and 3 indicate the case of two or three sets, and the protection circuit of the present invention. ing. "Nil" is the characteristic without the protection circuit. As shown in the figure, the distortion characteristics when a protection circuit configured by connecting two or more sets of diodes in series are closer to the characteristics without the protection circuit than one set of diodes, and the distortion characteristics are not deteriorated. Therefore, there is no need to provide a reverse bias to the diode as shown in FIG.
【0011】そして、図4は増幅器の利得の周波数特
性、図5は入力端子11に於けるリターンロス特性、図
6は出力端子20に於けるリターンロス特性を示すもの
で、各図に於いてFはダイオードの組が1で図7(a)
に示す従来の保護回路の特性を示し、Gは2組、Hは3
組の本発明の保護回路を示している。図示するようにダ
イオードの組が1組のFの利得は高周波になる程劣化す
るのに比べ、ダイオードの組を2組以上直列接続した
G,Hの利得はFの利得に比べて大きく改善されてい
る。また、リターンロスの特性も入力側は300MHz
以上に於いて、また出力側は500MHz以上に於てダ
イオードを2組以上直列接続したものは1組のものに比
べて小さい値となり改善されていることが分かる。これ
は、VSWRも改善されていることを示しているもの
で、インピーダンス特性が1000MHzの高域に至る
まで改善されていることを示している。尚、図3〜図6
に示す諸特性は、保護回路に図1(b)の回路を用いて
も同様の特性を示すものである。FIG. 4 shows the frequency characteristic of the gain of the amplifier, FIG. 5 shows the return loss characteristic at the input terminal 11, and FIG. 6 shows the return loss characteristic at the output terminal 20. FIG. 7A shows a case where the number of the diodes is 1 in FIG.
Shows the characteristics of the conventional protection circuit shown in FIG.
3 shows a set of protection circuits of the invention. As shown in the figure, the gain of F with one set of diodes deteriorates as the frequency increases, whereas the gain of G and H with two or more sets of diodes connected in series is greatly improved as compared with the gain of F. ing. Also, the return loss characteristic is 300 MHz on the input side.
From the above, it can be seen that the output side has two or more sets of diodes connected in series at 500 MHz or higher and has a smaller value than that of one set, which is improved. This indicates that the VSWR has also been improved, indicating that the impedance characteristics have been improved up to a high frequency of 1000 MHz. 3 to 6
The characteristics shown in FIG. 1 show the same characteristics even when the circuit of FIG. 1B is used for the protection circuit.
【0012】このように、保護回路に2個のダイオード
を逆方向に並列接続した組を少なくとも2組直列接続し
て構成した回路、又は順方向に少なくとも2個を直列接
続したダイオードの組を2組逆方向となるように並列接
続した回路を用いれば、高周波増幅回路の歪特性,イン
ピーダンス特性の双方を1000MHzの高域に至るま
で劣化させることが無い。As described above, a circuit in which at least two sets of two diodes connected in parallel in the reverse direction to the protection circuit are connected in series, or a set of two diodes connected in series in the forward direction is two If circuits connected in parallel so as to be in opposite directions are used, both the distortion characteristics and the impedance characteristics of the high-frequency amplifier circuit are not degraded up to the high frequency band of 1000 MHz.
【0013】[0013]
【発明の効果】以上詳述したように、本発明の保護回路
によれば、1000MHzの高域に至るまで高周波増幅
回路の歪特性、インピーダンス特性を劣化させること無
く、異常サージ電圧を除去することができる。As described above in detail, according to the protection circuit of the present invention, it is possible to remove an abnormal surge voltage without deteriorating the distortion characteristics and impedance characteristics of the high-frequency amplifier circuit up to the high frequency band of 1000 MHz. Can be.
【図1】本発明の保護回路の実施の形態の1例を示す構
成図である。FIG. 1 is a configuration diagram illustrating an example of an embodiment of a protection circuit according to the present invention.
【図2】本発明の保護回路を高周波増幅回路の出力に設
けた具体例を示す回路ブロック図である。FIG. 2 is a circuit block diagram showing a specific example in which a protection circuit of the present invention is provided at an output of a high-frequency amplifier circuit.
【図3】図2の増幅器の歪特性を示す図である。FIG. 3 is a diagram illustrating distortion characteristics of the amplifier of FIG. 2;
【図4】図2の増幅器の利得特性を示す図である。FIG. 4 is a diagram illustrating gain characteristics of the amplifier of FIG. 2;
【図5】図2の増幅器の入力側のリターンロス特性を示
す図である。FIG. 5 is a diagram illustrating return loss characteristics on the input side of the amplifier of FIG. 2;
【図6】図2の増幅器の出力側のリターンロス特性を示
す図である。FIG. 6 is a diagram illustrating return loss characteristics on the output side of the amplifier in FIG. 2;
【図7】従来の保護回路を示す図である。FIG. 7 is a diagram showing a conventional protection circuit.
1・・高周波増幅回路、2・・出力線、3・・出力端
子、4・・保護回路、4a・・ダイオード、5・・保護
回路、5a・・ダイオード、6・・入力線1. high frequency amplifier circuit, 2. output line, 3. output terminal, 4. protection circuit, 4a diode, 5. protection circuit, 5a diode, 6, input line
Claims (2)
の間に、2個のダイオードを互いに極性が逆方向となる
よう並列接続した組を少なくとも2組直列接続して設け
た保護回路。1. A protection circuit comprising at least two sets of two diodes connected in parallel so that polarities are opposite to each other in series between an input or output of a high-frequency amplifier circuit and ground.
の間に、少なくとも2個のダイオードを順方向に直列接
続した組を、2組互いに極性が逆方向となるよう並列接
続して設けた保護回路。2. A set in which at least two diodes are connected in series in a forward direction between an input or output of a high-frequency amplifier circuit and a ground, and two sets are connected in parallel so that the polarities are opposite to each other. Protection circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9160241A JPH118841A (en) | 1997-06-17 | 1997-06-17 | Protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9160241A JPH118841A (en) | 1997-06-17 | 1997-06-17 | Protection circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH118841A true JPH118841A (en) | 1999-01-12 |
Family
ID=15710763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9160241A Pending JPH118841A (en) | 1997-06-17 | 1997-06-17 | Protection circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH118841A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100992331B1 (en) | 2008-08-12 | 2010-11-05 | 삼성전기주식회사 | Booster amplifier and high frequency modulator for high frequency modulator |
| JP2010537620A (en) * | 2007-08-30 | 2010-12-02 | ゼナジー パワー ピーティーワイ リミテッド | Power suppression device for fault current limiter |
-
1997
- 1997-06-17 JP JP9160241A patent/JPH118841A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010537620A (en) * | 2007-08-30 | 2010-12-02 | ゼナジー パワー ピーティーワイ リミテッド | Power suppression device for fault current limiter |
| KR100992331B1 (en) | 2008-08-12 | 2010-11-05 | 삼성전기주식회사 | Booster amplifier and high frequency modulator for high frequency modulator |
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| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20061024 |