JPH1187610A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH1187610A JPH1187610A JP24104497A JP24104497A JPH1187610A JP H1187610 A JPH1187610 A JP H1187610A JP 24104497 A JP24104497 A JP 24104497A JP 24104497 A JP24104497 A JP 24104497A JP H1187610 A JPH1187610 A JP H1187610A
- Authority
- JP
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- Prior art keywords
- substrate
- relay electrode
- electrode
- chip
- power
- Prior art date
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Abstract
(57)【要約】
【課題】 パワー基板とケースの外部電極とがワイヤボ
ンディングや半田付けによらずに接続され、分解容易で
再利用が容易なパワーモジュールを提供する。
【解決手段】 外部電極2を有するケース1と、チップ
基板としてのパワー基板6を支持するパワー基板支持板
7と、一方の面にはパワー基板支持板7に支持されたパ
ワー基板6の半導体チップに当接する第1の中継電極9
を、他方の面には外部電極2のケース内露出部2Aに接
触する第2の中継電極10を有する配線用中継電極基板
8とを備え、パワー基板6と外部電極2とを接圧のみに
より接続したものであり、固定ネジ11を外すだけで容
易に分解でき、良品のパワー基板6の回収、再利用が容
易である。
(57) [Problem] To provide a power module in which a power board and an external electrode of a case are connected without using wire bonding or soldering, and are easily disassembled and reused. SOLUTION: A case 1 having external electrodes 2, a power board support plate 7 for supporting a power board 6 as a chip board, and a semiconductor chip of the power board 6 supported by the power board support plate 7 on one surface. Relay electrode 9 in contact with
And a wiring relay electrode substrate 8 having a second relay electrode 10 in contact with the exposed portion 2A in the case of the external electrode 2 on the other surface, so that the power substrate 6 and the external electrode 2 are contacted only by contact pressure. It is connected, and can be easily disassembled simply by removing the fixing screw 11, and it is easy to collect and reuse a good power board 6.
Description
【0001】[0001]
【発明の属する技術分野】この発明は組立て、分解容易
でリサイクルに有利なパワーモジュール等の半導体装置
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device such as a power module which is easy to assemble and disassemble and is advantageous for recycling.
【0002】[0002]
【従来の技術】従来のパワーモジュールは、ケース内に
おいて、チップ基板としてのパワー基板を構成する絶縁
基板上の半導体チップとしてのIGBTチップ、ダイオ
ードチップ等のパワーチップと外部電極とが半田付け、
若しくはワイヤボンディングされ、その後、モールド樹
脂にて封入されている。又、前記ケースと放熱板となる
部分が接着剤などにより固定されている。2. Description of the Related Art In a conventional power module, a power chip such as an IGBT chip or a diode chip as a semiconductor chip on an insulating substrate constituting a power substrate as a chip substrate is soldered to an external electrode in a case.
Alternatively, they are wire-bonded and then sealed with a mold resin. In addition, the case and a portion serving as a heat sink are fixed with an adhesive or the like.
【0003】[0003]
【発明が解決しようとする課題】従来のパワーモジュー
ルは以上のように構成されるために、即ち、パワー基板
とケースに内蔵された電極とがワイヤボンディングや半
田付けにより接続されており、かつ、接続部がモールド
樹脂にてモールドされているので、又、ケースと放熱板
部が接着剤などにより固定されているので、分解が容易
でない。Since the conventional power module is configured as described above, that is, the power board and the electrode built in the case are connected by wire bonding or soldering, and Since the connecting portion is molded with a molding resin, and since the case and the heat radiating plate are fixed by an adhesive or the like, disassembly is not easy.
【0004】このために、パワーモジュールとして、パ
ワー基板上に複数個内蔵されたパワーチップの1つでも
破損した場合には、内蔵された他の全てのパワーチップ
も使用不可となり、正常なパワーチップの再利用が不可
能であり、又、完全に使用不可となっても部材の種類ご
との分別も困難であるという問題点があった。[0004] For this reason, when even one of a plurality of built-in power chips on a power board is broken as a power module, all the other built-in power chips become unusable, and a normal power chip is used. However, there is a problem in that it is impossible to reuse the material, and even if it becomes completely unusable, it is difficult to separate the components by type.
【0005】この発明は、上記のような問題点を解消す
るためになされたもので、パワー基板とケースに内蔵さ
れた電極とがワイヤボンディングや半田付けによらずに
接合され、分解容易で正常なパワーチップのリサイクル
を容易なパワーモジュール等の半導体装置を提供するこ
とを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and a power board and an electrode incorporated in a case are joined without wire bonding or soldering, so that the power board and the electrode are easily disassembled and normal. It is an object of the present invention to provide a semiconductor device such as a power module that can easily recycle a power chip.
【0006】[0006]
【課題を解決するための手段】第1の発明に係わる半導
体装置は、半導体チップを備えたチップ基板を支持する
チップ基板支持部と、外部電極を支持する外部電極支持
部と、前記チップ基板支持部と外部電極支持部との間に
配設され、配線パターンが形成されると共に、一方の面
には前記チップ基板支持部に支持された前記チップ基板
の半導体チップに圧接される中継電極を、他方の面には
前記外部電極支持部に支持された外部電極に圧接される
中継電極を有する配線用中継電極基板とを備えたもので
ある。According to a first aspect of the present invention, there is provided a semiconductor device comprising: a chip substrate supporting portion for supporting a chip substrate having a semiconductor chip; an external electrode supporting portion for supporting external electrodes; Disposed between the portion and the external electrode support portion, a wiring pattern is formed, and on one surface a relay electrode pressed against a semiconductor chip of the chip substrate supported by the chip substrate support portion, On the other surface, a wiring relay electrode substrate having a relay electrode pressed against the external electrode supported by the external electrode support is provided.
【0007】第2の発明に係わる半導体装置は、第1の
発明に係わる半導体装置において、配線用中継電極基板
に備わる中継電極及び外部電極支持部に支持された外部
電極の少なくとも何れかは弾性を有したものである。A semiconductor device according to a second aspect of the present invention is the semiconductor device according to the first aspect, wherein at least one of the relay electrode provided on the wiring relay electrode substrate and the external electrode supported by the external electrode support portion has elasticity. It had.
【0008】第3の発明に係わる半導体装置は、第1又
は第2の発明に係わる半導体装置において、外部電極支
持部、配線用中継電極基板及びチップ基板支持部は共通
のネジにて一体にネジ締め結合されたものである。A semiconductor device according to a third aspect of the present invention is the semiconductor device according to the first or second aspect, wherein the external electrode support, the wiring relay electrode substrate, and the chip substrate support are integrally screwed with a common screw. It is a tightened connection.
【0009】第4の発明に係わる半導体装置は、第1乃
至第3のいずれかに記載の発明に係わる半導体装置にお
いて、外部電極支持部、配線用中継電極基板及びチップ
基板支持部は、これらの何れかに備わる弾性体を介して
一体にネジ締め結合されたものである。A semiconductor device according to a fourth aspect of the present invention is the semiconductor device according to any one of the first to third aspects, wherein the external electrode support, the interconnecting relay electrode substrate, and the chip substrate support are provided with the same. They are integrally screwed and connected via an elastic body provided in any of them.
【0010】第5の発明に係わる半導体装置は、第1乃
至第4のいずれかに記載の発明に係わる半導体装置にお
いて、チップ基板支持部はチップ基板をはめ込む凹部を
備えたものである。A semiconductor device according to a fifth aspect of the present invention is the semiconductor device according to any one of the first to fourth aspects, wherein the chip substrate support has a concave portion into which the chip substrate is fitted.
【0011】[0011]
実施の形態1.図1は第1〜第5の発明の一実施の形態
としての、半導体装置であるパワーモジュールの断面を
示す図、図2は図1に示したでパワーモジュールの展開
図である。Embodiment 1 FIG. FIG. 1 is a diagram showing a cross section of a power module as a semiconductor device according to an embodiment of the first to fifth inventions, and FIG. 2 is a developed view of the power module shown in FIG.
【0012】図1及び図2において、1は一面が開口し
たケース、2は外部電極、2Aは外部電極2のケース1
内に突出した露出部であり、以下、説明の都合上内部電
極と記載する。外部電極2は外部電極支持部としてのケ
ース1における開口面1Aに対向する密閉面1Bに埋め
込み固定されている。3は半導体チップとしてのIGB
Tチップ、4はダイオードチップ、5はIGBTチップ
3、ダイオードチップ4等のパワーチップを搭載、固着
して絶縁する絶縁基板、6はIGBTチップ3、ダイオ
ードチップ4、絶縁基板5等から構成されたチップ基板
としてのパワー基板である。尚、絶縁基板5は、図2に
示すように、銅箔5A、絶縁材5B、放熱用銅材5Cに
て構成されている。1 and 2, reference numeral 1 denotes a case having an open surface, 2 denotes an external electrode, and 2A denotes a case 1 of the external electrode 2.
The exposed portion protrudes inward, and is hereinafter referred to as an internal electrode for convenience of description. The external electrode 2 is embedded and fixed in a sealing surface 1B facing the opening surface 1A in the case 1 as an external electrode support. 3 is IGB as a semiconductor chip
T chip, 4 is a diode chip, 5 is an insulating substrate on which a power chip such as an IGBT chip 3 and a diode chip 4 is mounted, fixed and insulated, and 6 is composed of an IGBT chip 3, a diode chip 4, an insulating substrate 5 and the like. A power substrate as a chip substrate. In addition, as shown in FIG. 2, the insulating substrate 5 includes a copper foil 5A, an insulating material 5B, and a heat-radiating copper material 5C.
【0013】7はパワー基板6を支持、固定すると共に
ケース1の開口面1Aの蓋体であるパワー基板支持部と
してのパワー基板支持板であり、内側面に凹部7Aを備
え、この凹部7Aにパワー基板6をはめ込み、位置決め
固定する。尚、図において、凹部7Aは段付き部が開口
しており、この開口部からパワー基板6における放熱用
銅材5Cが覗いている。Reference numeral 7 denotes a power board supporting plate which supports and fixes the power board 6 and serves as a power board supporting portion which is a lid of the opening surface 1A of the case 1. The power board supporting plate 7 has a recess 7A on the inner side surface. The power board 6 is fitted and positioned and fixed. In the figure, the recessed portion 7A has an open stepped portion, from which the heat-dissipating copper material 5C of the power board 6 is viewed.
【0014】8は配線用中継電極基板、9は配線用中継
電極基板8の一方の面に設けた、パワー基板との接続を
中継する第1の中継電極、10は配線用中継電極基板8
の他方の面に設けた、ケース電極との接続を中継する第
2の中継電極であり、配線用中継電極基板8の内部には
第1の中継電極9、第2の中継電極10等と接続された
配線パターンとしての配線層が埋設、形成されている。
第1の中継電極9、第2の中継電極10はリン青銅等の
バネ材からなり、配線用中継電極基板8のそれぞれの面
の垂直方向に弾性を有する。Reference numeral 8 denotes a wiring relay electrode substrate, 9 denotes a first relay electrode provided on one surface of the wiring relay electrode substrate 8 for relaying connection with a power substrate, and 10 denotes a wiring relay electrode substrate 8.
A second relay electrode provided on the other surface of the wiring relay, for relaying connection with the case electrode, and is connected to the first relay electrode 9, the second relay electrode 10 and the like inside the wiring relay electrode substrate 8. A wiring layer as a formed wiring pattern is buried and formed.
The first relay electrode 9 and the second relay electrode 10 are made of a spring material such as phosphor bronze, and have elasticity in a direction perpendicular to respective surfaces of the wiring relay electrode substrate 8.
【0015】配線用中継電極基板8はケース1の内側に
位置し、第1の中継電極9を備えた一方の面がパワー基
板支持板7と対向し、第2の中継電極10を備えた他方
の面がケース1の密閉面1Bの内側に対向している。そ
して、第1の中継電極9がパワー基板支持板7に固定さ
れたパワー基板6のIGBTチップ3、ダイオードチッ
プ4等と所定の接圧にて接触し、第2の中継電極10が
ケース1の内部電極2Aと所定の接圧にて接触してい
る。The wiring relay electrode substrate 8 is located inside the case 1, and one surface provided with the first relay electrode 9 faces the power board support plate 7 and the other provided with the second relay electrode 10. Faces the inside of the sealing surface 1B of the case 1. Then, the first relay electrode 9 comes into contact with the IGBT chip 3, the diode chip 4, and the like of the power board 6 fixed to the power board support plate 7 at a predetermined contact pressure, and the second relay electrode 10 contacts the case 1. It is in contact with internal electrode 2A at a predetermined contact pressure.
【0016】11は固定ネジ、1Cはケース1に設けた
固定ネジ用ネジ穴であり、パワー基板支持板7と配線用
中継電極基板8の両方がケース1に固定ネジ11にてネ
ジ締め固定される。12は配線用中継電極基板の固定用
バネ、13はパワー基板支持板の固定用バネであり、そ
れぞれケース1の所定の位置に取付け固定された弾性体
としての固定用バネである。Reference numeral 11 denotes a fixing screw, and 1C denotes a fixing screw screw hole provided in the case 1. Both the power board support plate 7 and the wiring relay electrode substrate 8 are fixed to the case 1 with the fixing screws 11. You. Reference numeral 12 denotes a fixing spring of the wiring relay electrode substrate, and reference numeral 13 denotes a fixing spring of the power board support plate, which are fixing springs as elastic bodies fixed to predetermined positions of the case 1, respectively.
【0017】次に、図1に示したパワーモジュールの組
立て方法を図2により説明する。図2において、ケース
1の開口面1Aより配線用中継電極基板8を、第2の中
継電極10を備えた面を奥側にして挿入し、第2の中継
電極10とケース1の密閉面1Bの内面側に備えた内部
電極2Aとが接触するように挿入する。Next, a method of assembling the power module shown in FIG. 1 will be described with reference to FIG. In FIG. 2, the relay electrode substrate 8 for wiring is inserted from the opening surface 1A of the case 1 with the surface provided with the second relay electrode 10 on the back side, and the sealing surface 1B of the second relay electrode 10 and the case 1 is inserted. Is inserted so as to be in contact with the internal electrode 2A provided on the inner surface side of.
【0018】次に、IGBTチップ3、ダイオードチッ
プ4等のパワーチップ及び絶縁基板5等から構成された
パワー基板6をパワー基板支持板7の凹部7Aに挿入
し、このパワー基板支持板7が挿入された面をケース1
の内面側にして、パワー基板支持板7と配線用中継電極
基板8の両方をケース1に固定ネジ11にてネジ締め固
定する。即ち、パワー基板支持板7と配線用中継電極基
板8の両方は固定ネジ11により、ケース1に設けた固
定ネジ用ネジ穴1Cにネジ締めされ、ケース1に固定さ
れる。Next, a power board 6 composed of a power chip such as the IGBT chip 3 and the diode chip 4 and an insulating board 5 is inserted into the recess 7A of the power board support plate 7, and the power board support plate 7 is inserted. Case 1
, Both the power board support plate 7 and the wiring relay electrode board 8 are fixed to the case 1 with the fixing screws 11. That is, both the power substrate support plate 7 and the wiring relay electrode substrate 8 are screwed into the fixing screw screw holes 1C provided in the case 1 by the fixing screws 11 and fixed to the case 1.
【0019】パワーチップとしてのIGBTチップ3、
ダイオードチップ4等は配線用中継電極基板8に形成さ
れた第1の中継電極9を介して配線用中継電極基板8に
埋設、形成された配線層にて配線されており、かつ、第
2の中継電極10及びケース1の内部電極2Aを介して
外部電極2に導通しており、配線用中継電極基板8を備
えることにより接続部は全て接圧によることができ、配
線のための半田付けやワイヤーボンディングが不要であ
る。IGBT chip 3 as a power chip,
The diode chip 4 and the like are buried in the wiring relay electrode substrate 8 via the first relay electrode 9 formed on the wiring relay electrode substrate 8 and wired in the wiring layer formed. It is electrically connected to the external electrode 2 via the relay electrode 10 and the internal electrode 2A of the case 1. By providing the wiring relay electrode substrate 8, all of the connection portions can be made to be in contact with each other. No wire bonding is required.
【0020】又、配線用中継電極基板8に備わる第1の
中継電極9及び第2の中継電極10は前述のごとく、リ
ン青銅板等にて形成されており、基板面に垂直方向に弾
性を有するので、第1の中継電極9とIGBTチップ
3、ダイオードチップ4等との接圧、第2の中継電極1
0と内部電極2Aとの接触部の接圧を所定圧とすること
ができると共に、同一平面上に配置された複数の電極間
にて多少の凹凸が存在しても、全ての電極の接触を確実
にすることができる。尚、第2の中継電極10の代わり
に、内部電極2Aにバネ作用を持たせても同様な機能が
得られる。The first relay electrode 9 and the second relay electrode 10 provided on the wiring relay electrode substrate 8 are formed of a phosphor bronze plate or the like, as described above, and have elasticity in a direction perpendicular to the substrate surface. The contact pressure between the first relay electrode 9 and the IGBT chip 3, the diode chip 4, etc., and the second relay electrode 1
The contact pressure of the contact portion between 0 and the internal electrode 2A can be set to a predetermined pressure, and even if there is some unevenness between a plurality of electrodes arranged on the same plane, the contact of all the electrodes can be prevented. Can be assured. Note that a similar function can be obtained by providing the internal electrode 2A with a spring function instead of the second relay electrode 10.
【0021】更に、パワー基板支持板7と配線用中継電
極基板8の両方が共通の固定ネジ11にてケース1にネ
ジ締め固定され、組立て、分解が更に容易となった。Further, both the power board support plate 7 and the wiring relay electrode board 8 are fixed to the case 1 by screwing with the common fixing screw 11, so that assembly and disassembly are further facilitated.
【0022】尚、ケース1には、配線用中継電極基板の
固定用バネ12、パワー基板支持板の固定用バネ13を
備え、これらの固定用バネ12、13を介してパワー基
板支持板7と配線用中継電極基板8の両方を共通の固定
ネジ11にてケース1にネジ締め固定しているので、パ
ワー基板支持板7及び配線用中継電極基板8の保持を確
実とすると共に、分解時にはケース1からパワー基板支
持板7、配線用中継電極基板8等が外れ易く、分解作業
が極めて容易となった。The case 1 is provided with a fixing spring 12 for the wiring relay electrode substrate and a fixing spring 13 for the power substrate support plate, and the power substrate support plate 7 and the power substrate support plate 7 are fixed via these fixing springs 12 and 13. Since both of the wiring relay electrode substrates 8 are screwed and fixed to the case 1 with the common fixing screws 11, the holding of the power board support plate 7 and the wiring relay electrode substrate 8 is ensured. 1, the power board supporting plate 7, the wiring relay electrode substrate 8 and the like easily come off, and the disassembling operation becomes extremely easy.
【0023】又、パワー基板支持板7にはパワー基板6
を構成する絶縁基板と略同一形状で、パワー基板6を挿
入した場合に若干の隙を有する程度の寸法の凹部7Aを
形成したので、この凹部7Aにパワー基板6を挿入する
ことにより、パワー基板6を容易かつ正確に位置決めで
き、配線用中継電極基板8に形成された第1の中継電極
9とパワーチップとしてのIGBTチップ3、ダイオー
ドチップ4等とを正確に接触させることができる。The power board support plate 7 has a power board 6
A concave portion 7A having substantially the same shape as that of the insulating substrate and having such a size as to have a small gap when the power substrate 6 is inserted is formed. By inserting the power substrate 6 into the concave portion 7A, 6 can be easily and accurately positioned, and the first relay electrode 9 formed on the wiring relay electrode substrate 8 can be brought into accurate contact with the IGBT chip 3, the diode chip 4 or the like as a power chip.
【0024】尚、図1、図2に示した上記実施の形態で
は、外部電極支持部としてのケース1とパワー基板支持
部としてのパワー基板支持板7にて筐体を構成し、配線
用中継電極基板8を内挿したが、パワー基板支持部をケ
ースとし、外部電極支持部を蓋体として筐体を構成して
も、即ち、ケースにパワー基板6を挿入する凹部を形成
してパワー基板6を支持すると共に、外部電極支持部と
しての蓋体に外部電極2埋め込み固定することにより筐
体を構成し、このケース内に配線用中継電極基板8を内
挿しても同様な効果が得られる。In the above-described embodiment shown in FIGS. 1 and 2, the casing is constituted by the case 1 as the external electrode support and the power board support plate 7 as the power board support, and the wiring relay is provided. Although the electrode substrate 8 is inserted, the power substrate supporting portion may be used as a case, and the external electrode supporting portion may be used as a lid to form a housing. 6, the same effect can be obtained by forming a housing by embedding and fixing the external electrode 2 in a lid as an external electrode supporting portion, and inserting the wiring relay electrode substrate 8 in this case. .
【0025】又、パワー基板支持部、外部電極支持部の
両方を蓋体とし、両面が開口され、配線用中継電極基板
8が内挿された枠体の両側に、前記パワー基板支持部及
び外部電極支持部を配設して一体にネジ締めしても図
1、図2に示した実施の形態と同様な効果が得られる。Further, both the power board supporting portion and the external electrode supporting portion are used as lids, and the power board supporting portion and the external Even if the electrode support portion is provided and integrally screwed, the same effect as that of the embodiment shown in FIGS. 1 and 2 can be obtained.
【0026】又、上記のごとき枠体を用いず、配線用中
継電極基板8の両側にパワー基板支持部及び外部電極支
持部を配設して一体にネジ締めしてもよい。この場合に
は、パワー基板支持部及び外部電極支持部と配線用中継
電極基板との間に隙間が生ずるが、パッキンを挟み込む
かシール材にてシーリングしてもよく、又は、配線用中
継電極基板の周辺部、若しくはパワー基板支持部及び外
部電極支持部の前記配線用中継電極基板と対向する側の
周辺部を厚く形成することにより、半導体チップや中継
電極等を包みこみ、密閉することができ、図1、図2に
示した実施の形態と同様な効果が得られる。Instead of using the frame as described above, a power board support portion and an external electrode support portion may be provided on both sides of the wiring relay electrode substrate 8 and screwed together. In this case, a gap is formed between the power board support portion and the external electrode support portion and the wiring relay electrode substrate, but the packing may be sandwiched or sealed with a sealing material, or the wiring relay electrode substrate may be used. By forming a thicker peripheral portion, or a peripheral portion of the power substrate support portion and the external electrode support portion facing the wiring relay electrode substrate, the semiconductor chip, the relay electrode, and the like can be wrapped and sealed. The same effects as those of the embodiment shown in FIGS.
【0027】以上のように、上記実施の形態におけるパ
ワーモジュールは、接続部を半田付けによらず、接圧に
より構成したので、従来、必要としていた樹脂による封
入が不要となり、組立て、分解等が極めて容易となり、
良品パワーチップのリサイクルが容易となった。即ち、
パワー基板上の複数のパワーチップの一部が使用不能に
なっても、ネジを外すだけで容易に分解でき、使用可能
な良品のパワーチップを回収し、再利用でき、資源の有
効活用が可能となった。又、仕様の異なる部材毎の分別
回収も容易となった。As described above, in the power module according to the above-described embodiment, the connection portion is formed by contact pressure, not by soldering, so that it is not necessary to enclose with a resin which has been required conventionally, and assembly and disassembly can be performed. Very easy,
Recycling of good power chips has become easier. That is,
Even if some of the power chips on the power board become unusable, they can be easily disassembled simply by removing the screws, and the usable good power chips can be collected and reused, enabling effective use of resources. It became. In addition, it is easy to separate and collect each member having different specifications.
【0028】上記実施の形態においては、IGBTチッ
プ3、ダイオードチップ4を備えたパワー基板を搭載し
たパワーモジュールを例に示したが、IGBTチップ
3、ダイオードチップ4を備えたものに限定されるもの
ではなく、その他の半導体チップや制御部品等を搭載し
た半導体装置であっても同様な効果が得られる。In the above embodiment, the power module equipped with the power board provided with the IGBT chip 3 and the diode chip 4 has been described as an example. However, the power module provided with the IGBT chip 3 and the diode chip 4 is limited. Instead, a similar effect can be obtained in a semiconductor device on which other semiconductor chips, control parts, and the like are mounted.
【0029】[0029]
【発明の効果】第1の発明によれば、配線用中継電極基
板を備え、接続部を半田付けによらず接圧により構成し
たので、樹脂封入が不要となり、組立て、分解等が極め
て容易となり、使用可能な半導体チップの回収、再利用
が可能で、資源の有効活用が可能な半導体装置が得られ
る効果がある。According to the first aspect of the invention, since the wiring relay electrode substrate is provided and the connection portion is formed by contact pressure without soldering, resin encapsulation becomes unnecessary, and assembly and disassembly become extremely easy. Thus, there is an effect that a semiconductor device capable of recovering and reusing usable semiconductor chips and effectively utilizing resources can be obtained.
【0030】又、第2の発明によれば、配線用中継電極
基板における中継電極若しくは外部電極の中継電極との
接触する側が弾性を有するので、パワーチップと中継電
極、及び中継電極と外部電極とが所定の接圧力にて確実
に接触し、接触信頼性の高いものが得られる効果があ
る。According to the second aspect of the present invention, since the side of the wiring relay electrode substrate that contacts the relay electrode or the external electrode has elasticity, the power chip and the relay electrode, and the relay electrode and the external electrode can be connected to each other. Are reliably brought into contact with each other at a predetermined contact pressure, so that an object having high contact reliability can be obtained.
【0031】又、第3の発明によれば、パワー基板支持
部、配線用中継電極基板及び外部電極支持部を共通のネ
ジにてネジ締め結合したので、更に、組立て、分解等の
容易なものが得られる効果がある。According to the third aspect of the present invention, the power substrate support, the wiring relay electrode substrate, and the external electrode support are screwed together with a common screw. The effect is obtained.
【0032】又、第4の発明によれば、パワー基板支持
部、配線用中継電極基板及び外部電極支持部の何れかに
備えた弾性体を介して一体にネジ締め結合したので、分
解し易く、分解作業が極めて容易なものが得られる効果
がある。According to the fourth aspect of the present invention, since the power board supporting portion, the wiring relay electrode substrate, and the external electrode supporting portion are integrally screwed and connected via the elastic body provided therein, they are easily disassembled. In addition, there is an effect that an extremely easy disassembling operation can be obtained.
【0033】又、第5の発明によれば、パワー基板支持
部にパワー基板をはめ込む凹部を備えたので、このパワ
ー基板の位置決めが容易かつ確実となり、組立て、分解
等が更に容易なものが得られる効果がある。According to the fifth aspect of the present invention, since the power board supporting portion is provided with the concave portion into which the power board is fitted, the power board can be easily and reliably positioned, and the power board can be easily assembled and disassembled. Has the effect.
【図1】 第1乃至第5の発明の一実施の形態によるパ
ワーモジュールの断面図である。FIG. 1 is a sectional view of a power module according to an embodiment of the first to fifth inventions.
【図2】 第1乃至第5の発明の一実施の形態によるパ
ワーモジュールの展開図である。FIG. 2 is a development view of the power module according to the embodiment of the first to fifth inventions.
1 ケース、1C 固定ネジ用ネジ穴、2 外部電極、
2A 内部電極、3IGBTチップ、4 ダイオードチ
ップ、5 絶縁基板、5A 銅箔、5B 絶縁材、5C
放熱用銅材、6 パワー基板、7 パワー基板支持
板、7A 凹部、8 配線用中継電極基板、9 第1の
中継電極、10 第2の中継電極、11 固定ネジ、1
2、13 固定用バネ1 case, 1C screw holes for fixing screws, 2 external electrodes,
2A internal electrode, 3IGBT chip, 4 diode chip, 5 insulating substrate, 5A copper foil, 5B insulating material, 5C
Copper material for heat dissipation, 6 power board, 7 power board support plate, 7A recess, 8 relay electrode board for wiring, 9 first relay electrode, 10 second relay electrode, 11 fixing screw, 1
2,13 Fixing spring
Claims (5)
するチップ基板支持部と、外部電極を支持する外部電極
支持部と、前記チップ基板支持部と外部電極支持部との
間に配設され、配線パターンが形成されると共に、一方
の面には前記チップ基板支持部に支持された前記チップ
基板の半導体チップに圧接される中継電極を、他方の面
には前記外部電極支持部に支持された外部電極に圧接さ
れる中継電極を有する配線用中継電極基板とを備えたこ
とを特徴とする半導体装置。1. A chip substrate supporting portion for supporting a chip substrate provided with a semiconductor chip, an external electrode supporting portion for supporting external electrodes, and provided between the chip substrate supporting portion and the external electrode supporting portion, A wiring pattern was formed, and a relay electrode pressed against a semiconductor chip of the chip substrate supported by the chip substrate support was supported on one surface, and the external electrode was supported by the external electrode support on the other surface. A semiconductor device comprising: a wiring relay electrode substrate having a relay electrode pressed against an external electrode.
線用中継電極基板に備わる中継電極及び外部電極支持部
に支持された外部電極の少なくとも何れかは弾性を有す
ることを特徴とする半導体装置。2. The semiconductor device according to claim 1, wherein at least one of the relay electrode provided on the wiring relay electrode substrate and the external electrode supported by the external electrode support has elasticity.
において、外部電極支持部、配線用中継電極基板及びチ
ップ基板支持部は共通のネジにて一体にネジ締め結合さ
れていることを特徴とする半導体装置。3. The semiconductor device according to claim 1, wherein the external electrode support, the wiring relay electrode substrate, and the chip substrate support are integrally screwed and connected with a common screw. Semiconductor device.
の半導体装置において、外部電極支持部、配線用中継電
極基板及びチップ基板支持部は、これらの何れかに備わ
る弾性体を介して一体にネジ締め結合されていることを
特徴とする半導体装置。4. The semiconductor device according to claim 1, wherein the external electrode support, the wiring relay electrode substrate, and the chip substrate support are connected via an elastic body provided in any of these. A semiconductor device characterized by being integrally screwed and connected.
の半導体装置において、チップ基板支持部はチップ基板
をはめ込む凹部を備えたことを特徴とする半導体装置。5. The semiconductor device according to claim 1, wherein the chip substrate support has a recess into which the chip substrate is fitted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24104497A JPH1187610A (en) | 1997-09-05 | 1997-09-05 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24104497A JPH1187610A (en) | 1997-09-05 | 1997-09-05 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1187610A true JPH1187610A (en) | 1999-03-30 |
Family
ID=17068483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24104497A Pending JPH1187610A (en) | 1997-09-05 | 1997-09-05 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1187610A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004228403A (en) * | 2003-01-24 | 2004-08-12 | Fuji Electric Holdings Co Ltd | Semiconductor module, method of manufacturing the same, and switching power supply |
| US6791170B1 (en) * | 1999-04-22 | 2004-09-14 | Mitsubishi Denki Kabushiki Kaisha | Onboard semiconductor device |
| JP2007287833A (en) * | 2006-04-14 | 2007-11-01 | Mitsubishi Electric Corp | Power semiconductor device |
| JP2010028117A (en) * | 2008-07-19 | 2010-02-04 | Semikron Elektronik Gmbh & Co Kg | Arrangement having power semiconductor module, and method for manufacturing the same |
| JP2014103284A (en) * | 2012-11-21 | 2014-06-05 | Nippon Inter Electronics Corp | Power semiconductor module and manufacturing method of the same |
| JPWO2012157373A1 (en) * | 2011-05-16 | 2014-07-31 | 日本碍子株式会社 | Circuit board for peripheral circuit of large capacity module, and large capacity module including peripheral circuit using the circuit board |
| JP2024516506A (en) * | 2021-03-22 | 2024-04-16 | ヒタチ・エナジー・リミテッド | Chip Package |
-
1997
- 1997-09-05 JP JP24104497A patent/JPH1187610A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6791170B1 (en) * | 1999-04-22 | 2004-09-14 | Mitsubishi Denki Kabushiki Kaisha | Onboard semiconductor device |
| JP2004228403A (en) * | 2003-01-24 | 2004-08-12 | Fuji Electric Holdings Co Ltd | Semiconductor module, method of manufacturing the same, and switching power supply |
| JP2007287833A (en) * | 2006-04-14 | 2007-11-01 | Mitsubishi Electric Corp | Power semiconductor device |
| JP2010028117A (en) * | 2008-07-19 | 2010-02-04 | Semikron Elektronik Gmbh & Co Kg | Arrangement having power semiconductor module, and method for manufacturing the same |
| JPWO2012157373A1 (en) * | 2011-05-16 | 2014-07-31 | 日本碍子株式会社 | Circuit board for peripheral circuit of large capacity module, and large capacity module including peripheral circuit using the circuit board |
| JP2014103284A (en) * | 2012-11-21 | 2014-06-05 | Nippon Inter Electronics Corp | Power semiconductor module and manufacturing method of the same |
| JP2024516506A (en) * | 2021-03-22 | 2024-04-16 | ヒタチ・エナジー・リミテッド | Chip Package |
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