JPH118196A5 - - Google Patents

Claims (8)

A semiconductor thin film consisting of an aggregate of multiple rod-shaped or flat rod-shaped crystals, whose main component is silicon and contains elements of nickel, cobalt, iron, palladium, platinum, copper, or gold, and whose plane orientation is { 111 } orientation, and the concentrations of carbon, nitrogen, and sulfur present in the film are 5 × 10 ¹⁸ atoms/cm ³ Less than or 0.01 atomic% and the concentration of oxygen present in the film is less than 1.5 × 10 ¹⁹ atoms/cm ³ Less than or 0.03 atomic% A semiconductor thin film characterized in that: A semiconductor thin film consisting of an aggregate of a plurality of rod-shaped or flat rod-shaped crystals, the main component of which is silicon and contains elements of nickel, cobalt, iron, palladium, platinum, copper or gold, 111 } orientation ratio is 0.9 The concentrations of carbon, nitrogen and sulfur present in the film are 5 × 10 ¹⁸ atoms/cm ³ Less than or 0.01 atomic% and the concentration of oxygen present in the film is less than 1.5 × 10 ¹⁹ atoms/cm ³ Less than or 0.03 atomic% A semiconductor thin film characterized in that: 3. The semiconductor thin film according to claim 1, wherein the semiconductor thin film contains a halogen element. 1 × 10 ¹⁵ ~ 1 × 10 ²⁰ atoms/cm ³ A semiconductor thin film characterized in that it contains at a concentration of The plurality of rod-shaped or flat rod-shaped crystals are arranged parallel to each other in a specific direction. 1 4. The semiconductor thin film according to any one of claims 1 to 3. A semiconductor device comprising a semiconductor thin film consisting of an aggregate of a plurality of rod-shaped or flat rod-shaped crystals, the semiconductor thin film being mainly composed of silicon and containing elements of nickel, cobalt, iron, palladium, platinum, copper or gold, wherein the plane orientation of the semiconductor thin film is { 111 } orientation, and the concentrations of carbon, nitrogen, and sulfur present in the film are 5 × 10 ¹⁸ atoms/cm ³ Less than or 0.01 atomic% and the concentration of oxygen present in the film is less than 1.5 × 10 ¹⁹ atoms/cm ³ Less than or 0.03 atomic% A semiconductor device characterized in that: A semiconductor device comprising a semiconductor thin film consisting of an aggregate of a plurality of rod-shaped or flat rod-shaped crystals, the semiconductor thin film being mainly composed of silicon and containing elements of nickel, cobalt, iron, palladium, platinum, copper or gold, wherein 111 } orientation ratio is 0.9 The concentrations of carbon, nitrogen and sulfur present in the film are 5 × 10 ¹⁸ atoms/cm ³ Less than or 0.01 atomic% and the concentration of oxygen present in the film is less than 1.5 × 10 ¹⁹ atoms/cm ³ Less than or 0.03 atomic% A semiconductor device characterized in that: 7. The semiconductor thin film according to claim 5, wherein the semiconductor thin film contains a halogen element. 1 × 10 ¹⁵ ~ 1 × 10 ²⁰ atoms/cm ³ A semiconductor device characterized in that it contains 8. The semiconductor device according to claim 5, wherein the plurality of rod-shaped or flat rod-shaped crystals are arranged parallel to one another in a specific direction.