JPH11509976A - Rf源とrfプラズマ・プロセッサの間に接続された整合ネットワークのリアクタンス性インピーダンスを制御する方法および装置 - Google Patents
Rf源とrfプラズマ・プロセッサの間に接続された整合ネットワークのリアクタンス性インピーダンスを制御する方法および装置Info
- Publication number
- JPH11509976A JPH11509976A JP9542687A JP54268797A JPH11509976A JP H11509976 A JPH11509976 A JP H11509976A JP 9542687 A JP9542687 A JP 9542687A JP 54268797 A JP54268797 A JP 54268797A JP H11509976 A JPH11509976 A JP H11509976A
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- Prior art keywords
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- impedance
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- frequency source
- trajectory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims description 28
- 230000008859 change Effects 0.000 claims abstract description 38
- 230000004044 response Effects 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 description 109
- 230000005540 biological transmission Effects 0.000 description 18
- 230000007423 decrease Effects 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000010076 replication Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
- H03H7/40—Automatic matching of load impedance to source impedance
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.ワークピースを処理する真空プラズマ反応室内のプラズマに高周波フィール ドを供給する方法であって、高周波フィールドが整合ネットワークを介して高周 波源に接続されたリアクタンス性インピーダンス要素によってプラズマに供給さ れ、高周波フィールドがガスをプラズマに励起し、プラズマを維持するのに十分 な周波数および電力を有しており、整合ネットワークが高周波源のローディング と、リアクタンス性インピーダンス要素およびプラズマを含む負荷の高周波源に 対する同調とを制御する第1および第2の可変リアクタンスを含んでいる方法に おいて、(1)高周波源の出力端子の内外に現れるインピーダンスの間の最良の 整合を達成するために、第1および第2の可変リアクタンスの値を変えることに より第2の可変リアクタンスの各単位変化に対して第1の可変リアクタンスが変 化する量を決定し、(2)高周波源の出力端子の内外に現れるインピーダンスの 間の最良のインピーダンス整合が達成されるまで、ステップ(1)で行われた決 定に基づいて第1および第2の可変リアクタンスの値を変動させることを特徴と する方法。 13.高周波源の出力端子の内外に現れるインピーダンスの間の最良の整合が高 周波源とリアクタンス性インピーダンス要素およびプラズマを含む負荷との間に 結合された電力の関数として決定される請求の範囲第1項に記載の方法。 14.関数がリアクタンス性インピーダンス要素へ流れる最大高周波電流である 請求の範囲第13項に記載の方法。 15.関数が高周波源出力電力に関して負荷に送出される最大電力に基づいてい る請求の範囲第13項に記載の方法。 16.第1および第2の可変リアクタンスの値がステップ(2)の間に同時に変 化する請求の範囲第1項または第13項ないし第15項のいずれか一項に記載の 方法。 17.第1および第2の可変リアクタンスの値をステップ(1)の間に順次変化 させて、第1の可変リアクタンスが変化させられるとともに、第2の可変リアク タンスを変化させず、また第2の可変リアクタンスを変化させるとともに、第1 の可変リアクタンスを変化させない請求の範囲第1項または第13項ないし第1 6項のいずれか一項に記載の方法。 18.第1および第2の可変リアクタンスの値がステップ(1)の間に同時に変 化する請求の範囲第1項または第13項ないし第16項のいずれか一項に記載の 方法。 19.ステップ(1)の間に達成される最良の整合が局部最良整合である請求の 範囲第1項または第13項ないし第18項のいずれか一項に記載の方法。 20.ステップ(2)の間に達成される最良の整合が局部最良整合である請求の 範囲第1項または第13項ないし第19項のいずれか一項に記載の方法。 21.ステップ(1)が(a)高周波源の出力端子の内外に現れるインピーダン スの間の最良の整合が達成されるまで、前記可変リアクタンスの第1のものの値 だけを変化させ、(b)次いで、高周波源の出力端子の内外に現れるインピーダ ンスの間の最良の整合が達成されるまで、前記可変リアクタンスの第2のものの 値だけを変化させ、(c)次いで、高周波源の出力端子の内外に現れるインピー ダンスの間の最良のローカル整合が達成されるまで、前記可変リアクタンスの第 1のものの値だけを変化させ、(d)ステップ(a)および(c)の完了時の第 1および第2の可変リアクタンスの値の指示から、第1の可変リアクタンスが第 2の可変リアクタンスの値の各単位変化に対して変化する量を決定することによ って行われる請求の範囲第1項または第13項ないし第17項、第19項または 第20項のいずれか一項に記載の方法。 22.ステップ(5)における変動が第1および第2の可変リアクタンスの値の プロットに第1の直線飛翔経路をもたらす請求の範囲第1項または第13項ない し第21項のいずれか一項に記載の方法であって、さらに (a’)ステップ(2)の完了時の考えられる最良のインピーダンス整合が最 低基準を満たしているかどうかを判定し、 (b’)最低基準を満たしているとのステップ(a')の判定に応じて、第1 および第2の可変リアクタンスの値を一定に維持し、 (c’)最低基準を満たしていないとのステップ(a')の判定に応じて、高 周波源の出力端子の内外に現れる考えられるインピーダンス間の最良の整合が達 成 されるまで第1および第2の可変リアクタンスの値を変化させて、第1の飛翔経 路に直角の第2の直線飛翔迂回路が存在するようにし、 (d’)第1の飛翔経路上の点と、高周波源の出力端子の内外に現れる考えら れる最良のインピーダンス間の整合が達成される第2の飛翔経路上の点によって 決定される他の点とを含んでいる他の直線飛翔経路に沿って、第1および第2の 可変リアクタンスの値を同時に変化させることを含んでいる方法。 23.第1および他の飛翔経路上の点が第1の飛翔経路に沿った中間点である請 求の範囲第22項に記載の方法。 24.他の飛翔経路上の他の点が高周波源の出力端子の内外に現れる考えられる 最良のインピーダンス間の整合が達成される第2の飛翔経路上の点である請求の 範囲第22項または第23項に記載の方法。 25.請求の範囲記載のステップを自動的に実行するコントローラを特徴とする 請求の範囲第1項または第13項ないし第24項のいずれか一項に記載の方法を 実行する装置。 26.コントローラが請求の範囲記載のステップの実行を命令する信号を格納す るコンピュータ・メモリを含んでいる請求の範囲第25項に記載の装置。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/652,037 US5689215A (en) | 1996-05-23 | 1996-05-23 | Method of and apparatus for controlling reactive impedances of a matching network connected between an RF source and an RF plasma processor |
| US08/652,037 | 1996-05-23 | ||
| PCT/US1997/008610 WO1997044812A1 (en) | 1996-05-23 | 1997-05-23 | Method of and apparatus for controlling reactive impedances of a matching network connected between an rf source and an rf plasma processor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009107835A Division JP4435267B2 (ja) | 1996-05-23 | 2009-04-27 | Rf源とrfプラズマ・プロセッサの間に接続された整合ネットワークのリアクタンス性インピーダンスを制御する方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11509976A true JPH11509976A (ja) | 1999-08-31 |
| JP4531133B2 JP4531133B2 (ja) | 2010-08-25 |
Family
ID=24615265
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54268797A Expired - Fee Related JP4531133B2 (ja) | 1996-05-23 | 1997-05-23 | 整合ネットワークのリアクタンス性インピーダンス制御を用いた高周波フィールド供給方法および装置 |
| JP2009107835A Expired - Fee Related JP4435267B2 (ja) | 1996-05-23 | 2009-04-27 | Rf源とrfプラズマ・プロセッサの間に接続された整合ネットワークのリアクタンス性インピーダンスを制御する方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009107835A Expired - Fee Related JP4435267B2 (ja) | 1996-05-23 | 2009-04-27 | Rf源とrfプラズマ・プロセッサの間に接続された整合ネットワークのリアクタンス性インピーダンスを制御する方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5689215A (ja) |
| EP (1) | EP0840941B1 (ja) |
| JP (2) | JP4531133B2 (ja) |
| KR (1) | KR100513614B1 (ja) |
| DE (1) | DE69723649T2 (ja) |
| ES (1) | ES2202623T3 (ja) |
| WO (1) | WO1997044812A1 (ja) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI402911B (zh) * | 2004-09-06 | 2013-07-21 | 東京威力科創股份有限公司 | Plasma processing device |
| JP2016518673A (ja) * | 2013-03-15 | 2016-06-23 | エムケーエス インストゥルメンツ,インコーポレイテッド | 仮想rfセンサ |
| JP2017516258A (ja) * | 2014-03-24 | 2017-06-15 | アドバンスト・エナジー・インダストリーズ・インコーポレイテッドAdvanced Energy Industries, Inc. | 高周波発生器ソースインピーダンスの制御のためのシステムおよび方法 |
| US10224184B2 (en) | 2014-03-24 | 2019-03-05 | Aes Global Holdings, Pte. Ltd | System and method for control of high efficiency generator source impedance |
| JP2021034345A (ja) * | 2019-08-29 | 2021-03-01 | 東京エレクトロン株式会社 | プラズマ処理システムおよびプラズマ着火支援方法 |
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| US10224184B2 (en) | 2014-03-24 | 2019-03-05 | Aes Global Holdings, Pte. Ltd | System and method for control of high efficiency generator source impedance |
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| TWI884977B (zh) * | 2019-08-29 | 2025-06-01 | 日商東京威力科創股份有限公司 | 電漿處理系統及電漿點火支援方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0840941B1 (en) | 2003-07-23 |
| KR19990035781A (ko) | 1999-05-25 |
| US5689215A (en) | 1997-11-18 |
| ES2202623T3 (es) | 2004-04-01 |
| WO1997044812A1 (en) | 1997-11-27 |
| JP4435267B2 (ja) | 2010-03-17 |
| JP4531133B2 (ja) | 2010-08-25 |
| DE69723649D1 (de) | 2003-08-28 |
| EP0840941A2 (en) | 1998-05-13 |
| JP2009218213A (ja) | 2009-09-24 |
| KR100513614B1 (ko) | 2005-12-09 |
| DE69723649T2 (de) | 2004-06-03 |
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