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JPH11354399A - Substrate heating device - Google Patents

Substrate heating device

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Publication number
JPH11354399A
JPH11354399A JP16179398A JP16179398A JPH11354399A JP H11354399 A JPH11354399 A JP H11354399A JP 16179398 A JP16179398 A JP 16179398A JP 16179398 A JP16179398 A JP 16179398A JP H11354399 A JPH11354399 A JP H11354399A
Authority
JP
Japan
Prior art keywords
heating plate
heating
heat
substrate
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16179398A
Other languages
Japanese (ja)
Inventor
Tatsuharu Yamamoto
立春 山本
Masakazu Sugaya
昌和 菅谷
Hiroyuki Nishihara
宏幸 西原
Masabumi Kanetomo
正文 金友
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16179398A priority Critical patent/JPH11354399A/en
Publication of JPH11354399A publication Critical patent/JPH11354399A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】 【課題】広範囲な熱処理温度においても均一な基板加熱
を行う基板加熱装置を提供する。 【解決手段】第1の発熱体3と熱拡散体2と平面断熱体
4と第1の温度センサ9から成る主たる基板1の加熱構
造の外周部に、内周側面断熱体5と外周側面断熱体7で
挟み込まれた第2の発熱体6と第2の温度センサ12を
埋設し、それぞれ独立の温度制御回路によって制御され
る方式の第1の加熱プレートと、第1の加熱プレートと
同様な方式の第2の加熱プレートを第1の加熱プレート
に対向した位置に設置して基板1を加熱する。
(57) Abstract: Provided is a substrate heating apparatus that performs uniform substrate heating even at a wide range of heat treatment temperatures. An inner peripheral side heat insulator and an outer peripheral side heat insulator are provided on an outer peripheral portion of a main substrate heating structure including a first heating element, a thermal diffusion body, a planar heat insulator, and a first temperature sensor. The second heating element 6 and the second temperature sensor 12 sandwiched by the body 7 are buried, and the first heating plate is of a type controlled by independent temperature control circuits, and the same as the first heating plate. The substrate 1 is heated by placing a second heating plate of the system at a position facing the first heating plate.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、大気中での半導体
基板,液晶表示装置(LCD)用基板、またはこれらの
露光工程に使用するフォトマスクの製造工程において、
主に、配線パターン等の露光後のレジストベーキングを
行う基板加熱装置および加熱方法に関する。
The present invention relates to a process for manufacturing a semiconductor substrate, a substrate for a liquid crystal display (LCD), or a photomask used in these exposure processes in the air.
The present invention mainly relates to a substrate heating apparatus and a heating method for performing resist baking after exposure of a wiring pattern or the like.

【0002】[0002]

【従来の技術】高精細の電子線描画装置あるいはKrF
エキシマレーザを用いた露光工程に使用されるレジスト
材料には、主に照射エネルギーに対する感度および解像
度において優れた特性を有する化学増幅系のレジストが
使用されている。化学増幅系のレジストは、露光後のレ
ジスト加熱処理(Post Exposure Bake:PEB)によっ
て樹脂の架橋または分解反応を行う必要があり、例え
ば、基板面内で配線幅の変動量を0.01μm 以下に抑
えるためには、100±20℃程度で加熱処理中の基板
温度の面内分布を±0.1℃ 以下に抑える必要がある。
2. Description of the Related Art A high-definition electron beam drawing apparatus or KrF
As a resist material used in the exposing step using an excimer laser, a chemically amplified resist mainly having excellent characteristics in sensitivity to irradiation energy and resolution is used. A chemically amplified resist needs to undergo cross-linking or decomposition reaction of the resin by post-exposure bake (Post Exposure Bake: PEB), for example, to reduce the variation of the wiring width in the substrate plane to 0.01 μm or less. In order to suppress this, it is necessary to suppress the in-plane distribution of the substrate temperature during the heat treatment at about 100 ± 20 ° C. to ± 0.1 ° C. or less.

【0003】この目的のためには基板温度が不均一とな
る主な要因である、加熱プレート周辺からの自然対流あ
るいは強制対流による熱損失をいかに低減するか、また
は、損失する熱量と同等の熱量をいかに補給するかとい
う課題に対して、有効かつ簡単な手段を講じる必要があ
る。
[0003] For this purpose, how to reduce the heat loss due to natural convection or forced convection from around the heating plate, which is the main factor that causes the substrate temperature to be non-uniform, or to reduce the amount of heat equivalent to the amount of heat lost It is necessary to take effective and simple measures against the issue of how to replenish water.

【0004】従来、この様な高精度の熱処理を行うこと
を目的として、特開平9−50957号で開示されているよう
な手段がある。以下、図6によって、この従来の技術を
説明する。基板101は、直接または微少な隙間をもっ
て設置される第1の加熱プレート102と、基板101
の上方に一定の間隔をもって設置される第2の加熱プレ
ート103からの熱伝達によって加熱される。ここで、
第1の加熱プレート102と第2の加熱プレート103
の面内の発熱密度が均一であるとすると、空気の対流に
よって第1の加熱プレート102の周辺から熱が奪われ
るため、基板101の周辺部の温度は中心に比べて低く
なる。
Conventionally, there is a means disclosed in Japanese Patent Application Laid-Open No. 9-50957 for the purpose of performing such high-precision heat treatment. Hereinafter, this conventional technique will be described with reference to FIG. The substrate 101 includes a first heating plate 102 directly or with a small gap, and a substrate 101.
Is heated by heat transfer from a second heating plate 103 installed at a fixed interval above the plate. here,
First heating plate 102 and second heating plate 103
If the in-plane heat generation density is uniform, heat is removed from the periphery of the first heating plate 102 by convection of air, so that the temperature of the peripheral portion of the substrate 101 is lower than that of the center.

【0005】上記従来の技術は、これを補正するため
に、第2の加熱プレート103から基板101への熱伝
達の量が中心から周辺に向かって順次多くなるような手
段を講じている。この手段の第1は、第2の加熱プレー
ト103の発熱量を中心から周辺に向かって順次多くな
るようにすることである。また、この手段の第2は、第
2の加熱プレート103と基板101が対向する空間の
厚みを、中心から周辺に向けて順次少なくすることであ
る。
[0005] In the above-mentioned prior art, in order to correct this, a measure is taken so that the amount of heat transfer from the second heating plate 103 to the substrate 101 increases gradually from the center to the periphery. The first of these means is to make the heat value of the second heating plate 103 increase gradually from the center toward the periphery. A second feature of this means is that the thickness of the space where the second heating plate 103 and the substrate 101 face each other is gradually reduced from the center toward the periphery.

【0006】[0006]

【発明が解決しようとする課題】しかし、レジストの熱
処理温度はある特定の温度で行われるのではなく、使用
するレジストの品種や他の工程間との最適化に対応する
ために逐次処理温度の変更が行われる。この点に関し、
上記の従来の技術のいずれの手段でも、基板101の外周
部の熱伝達量は中心部に比べると多くする事ができる
が、外周部の発熱量または空間の厚みは、基板101の
処理温度が変更になると、周辺部の空気の対流による熱
の損失量が異なるため、その度に発熱分布の状態または
対向する空間の厚みを最適に調整する必要がある。
However, the heat treatment temperature of the resist is not performed at a specific temperature, but is set at successive processing temperatures in order to cope with optimization of the type of the resist to be used and between other processes. Changes are made. In this regard,
In any of the above-described conventional techniques, the heat transfer amount at the outer peripheral portion of the substrate 101 can be larger than that at the central portion, but the heat generation amount or the thickness of the space at the outer peripheral portion depends on the processing temperature of the substrate 101. Since the amount of heat loss due to the convection of the air in the peripheral portion differs when the change is made, it is necessary to optimally adjust the state of the heat generation distribution or the thickness of the opposed space each time.

【0007】本発明は、この様な問題を解決するため、
装置の構造面での変更ではなく、温度制御回路の温度設
定の調整のみで広範囲な熱処理温度においても均一な加
熱が可能な手段を提供することを目的とする。
The present invention solves such a problem,
It is an object of the present invention to provide a means capable of performing uniform heating even in a wide range of heat treatment temperatures only by adjusting the temperature setting of the temperature control circuit, not by changing the structure of the apparatus.

【0008】[0008]

【課題を解決するための手段】本発明では、上記目的を
達成するために、周辺部の空気の対流による熱の損失量
を正確に補給し、中心部と外周部の温度差をなくすため
に、基本的には次のような手段を講じる。第1の発熱体
と、第1の発熱体の上面に、第1の発熱体の熱を拡散さ
せるための熱拡散体が設置され、下面に熱の放出を抑制
するための断熱体が設置され、かつ、熱拡散体の中心部
に、第1の発熱体を温度制御するための第1の温度セン
サが埋設されることによって構成される第1の加熱プレ
ートにおいて、加熱プレートの外周部に、断熱体で挟み
込まれた第2の発熱体を設置し、かつ、熱拡散体の外周
部に第2の発熱体を温度制御するための第2の温度セン
サを埋設する。
SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides a method for accurately replenishing heat loss due to convection of air in a peripheral portion and eliminating a temperature difference between a central portion and an outer peripheral portion. Basically, take the following measures. A first heat generating element, a heat diffuser for diffusing heat of the first heat generating element are provided on an upper surface of the first heat generating element, and a heat insulator for suppressing heat release is provided on a lower surface of the first heat generating element. And, in the first heating plate configured by burying a first temperature sensor for controlling the temperature of the first heating element at the center of the heat spreader, at the outer peripheral portion of the heating plate, A second heating element sandwiched between heat insulators is provided, and a second temperature sensor for controlling the temperature of the second heating element is embedded in an outer peripheral portion of the heat diffusion body.

【0009】ここで、熱拡散体の上面に基板を設置し、
第1の発熱体と第2の発熱体を、PID制御機能等を有
するそれぞれ独立した温度制御回路によって温度調節を
行うことによって安定かつ均一な加熱を行う。また、こ
れらの構造物全体は保温ケースによって外気と隔離す
る。基板の熱拡散体への設置形態は、単純に置くだけの
他に、熱拡散体の表面に突起部を設け微少な隙間を保持
したままで加熱を行う形態、または、静電吸着,真空吸
着等による基板を吸着しながら加熱を行う形態でもよ
い。
Here, a substrate is placed on the upper surface of the heat spreader,
Stable and uniform heating is performed by controlling the temperatures of the first heating element and the second heating element by independent temperature control circuits each having a PID control function and the like. In addition, the whole of these structures is isolated from the outside air by a heat insulation case. In addition to simply placing the substrate on the heat diffuser, the substrate may be placed on the surface of the heat diffuser and heated while maintaining a small gap by providing protrusions, or by electrostatic suction or vacuum suction. For example, the heating may be performed while the substrate is being sucked.

【0010】以上が本発明の基本的な手段であるが、本
発明では第2の発熱体の温度制御を簡略化するために、
第2の温度センサに、測温抵抗体またはサーミスタのよ
うに温度によって抵抗値が大きく変化する特性の素子R
cを用い、参照抵抗Rbとの抵抗値の差によって生ずる
電位差を用いて発熱体のON−OFF制御を行う。
Although the above is the basic means of the present invention, in the present invention, in order to simplify the temperature control of the second heating element,
An element R having a characteristic whose resistance value greatly changes with temperature, such as a resistance temperature detector or a thermistor, is provided in the second temperature sensor.
Using c, ON-OFF control of the heating element is performed using a potential difference caused by a difference in resistance value from the reference resistor Rb.

【0011】上記の基本的な手段において、保温ケース
には通常、基板を出し入れするための開口部と開口部を
封じるシャッタが必要となる。このシャッタが開いたと
きに外気と内部の空気がある程度交換されるため、第1
の加熱プレートの開口部近傍の温度は低下する。この温
度むらを補正するために、第2の発熱体を複数に分割
し、それぞれ独立に温度制御することによって、熱の損
失が外周部の各位置で異なる場合、それに対応した熱の
補給を行う。
In the above-described basic means, the heat retaining case usually requires an opening for taking the substrate in and out, and a shutter for sealing the opening. When the shutter is opened, the outside air and the inside air are exchanged to some extent.
The temperature near the opening of the heating plate decreases. In order to correct the temperature unevenness, the second heating element is divided into a plurality of parts, and the temperature is controlled independently of each other, so that when the heat loss is different at each position of the outer peripheral portion, the heat supply corresponding thereto is performed. .

【0012】次に、基板の面方向からの熱の放出を抑え
ることを目的として、第1の加熱プレートに対向した位
置に第2の加熱プレートを設置し、第2の加熱プレート
を第1の加熱プレートと同じ設定温度にして基板加熱を
行う。この場合、第1の加熱プレートと第2の加熱プレ
ートの間隔は、周辺からの対流の影響を内部に与えない
ようにするために、できるだけ小さい方が望ましく、基
板の搬送に支障が無い程度まで小さくする必要がある。
Next, for the purpose of suppressing the release of heat from the surface of the substrate, a second heating plate is provided at a position facing the first heating plate, and the second heating plate is connected to the first heating plate. The substrate is heated at the same set temperature as the heating plate. In this case, the distance between the first heating plate and the second heating plate is desirably as small as possible so as not to affect the inside due to convection from the surroundings. Need to be smaller.

【0013】また、第2の加熱プレートの温度制御の方
式は、第1の加熱プレートと第2の加熱プレートの間隔
に応じて適正化しなければならない。即ち、基板加熱時
の第1の加熱プレートと第2の加熱プレートの間隔が1
0mm以上と大きい場合は、第2の加熱プレートでの温度
むらは基板にあまり影響しないが、間隔を狭くした上で
基板の温度均一性の精度を±0.1℃ 以下にするために
は、第2の加熱プレートを第1の加熱プレートと同様の
構成とする必要がある。
Further, the method of controlling the temperature of the second heating plate must be optimized in accordance with the distance between the first heating plate and the second heating plate. That is, the distance between the first heating plate and the second heating plate when the substrate is heated is 1
When the thickness is as large as 0 mm or more, the temperature unevenness in the second heating plate does not significantly affect the substrate. However, in order to reduce the interval and to make the accuracy of the temperature uniformity of the substrate ± 0.1 ° C or less, The second heating plate needs to have the same configuration as the first heating plate.

【0014】あるいは、第1の加熱プレートまたは第2
の加熱プレートに上下機構を設け、基板の搬送の際には
プレート間の間隔を空け、基板の加熱の場合はプレート
間の間隔を小さくして加熱効率を向上させる。ここで、
第1の加熱プレートまたは第2の加熱プレートが移動す
る際に生ずる気流の乱れを緩和するために、第2の加熱
プレートの外周部に保温リングを設置し、第1の加熱プ
レートと第2の加熱プレートの隙間を見かけ上封じる。
Alternatively, the first heating plate or the second heating plate
The heating plate is provided with an up-and-down mechanism to increase the space between the plates when transferring the substrate, and to reduce the space between the plates when heating the substrate, thereby improving the heating efficiency. here,
In order to alleviate the turbulence of the air flow generated when the first heating plate or the second heating plate moves, a heat retaining ring is provided on the outer periphery of the second heating plate, and the first heating plate and the second heating plate are arranged. Apparently seal the gap between the heating plates.

【0015】[0015]

【発明の実施の形態】図1は本発明の第1の加熱プレー
トの基本構成を示す断面図である。第1の発熱体3に
は、上面に、第1の発熱体3の熱を拡散させるための熱
拡散体2を、下面に、熱の放出を抑制するための平面断
熱体4が設置され、かつ、熱拡散体2の中心部に、第1
の発熱体3を温度制御するための第1の温度センサ9が
埋設されている。更に、周辺部の空気の対流による熱損
失量を正確に補給し、中心部と外周部の温度差をなくす
ために、外周部に内周側面断熱体5と外周側面断熱体7
で挟み込まれた第2の発熱体6を設置し、熱拡散体2の
外周部かつ表面または表面下近傍に第2の発熱体6を温
度制御するための第2の温度センサ12を埋設する。基
板1は熱拡散体2の上面に載置される。また、この様な
基本構成をとる第1の加熱プレートを保温ケース8によ
って外気と隔離する。
FIG. 1 is a sectional view showing a basic structure of a first heating plate according to the present invention. On the first heating element 3, a heat diffusion body 2 for diffusing the heat of the first heating element 3 is provided on an upper surface, and a flat heat insulator 4 for suppressing heat release is provided on a lower surface, In addition, the first portion
A first temperature sensor 9 for controlling the temperature of the heating element 3 is embedded. Further, in order to accurately supply the heat loss due to the convection of the air in the peripheral portion and to eliminate the temperature difference between the central portion and the peripheral portion, the inner peripheral side heat insulator 5 and the outer peripheral side heat insulator 7 are provided in the outer peripheral portion.
A second heat sensor 6 for controlling the temperature of the second heat generator 6 is buried in the outer peripheral portion of the heat spreader 2 and near the surface or below the surface. The substrate 1 is placed on the upper surface of the heat spreader 2. The first heating plate having such a basic configuration is isolated from the outside air by the heat retaining case 8.

【0016】第1の発熱体3と第2の発熱体6を、PI
D制御機能等を有するそれぞれ独立した温度制御回路1
0,13によって温度調節を行うことで安定かつ均一な
加熱を行う。基板1の熱拡散体2上面への設置形態は、
単純に置くだけの他に、熱拡散体2の表面に突起部を設
け微少な隙間を保持したままで加熱を行う形態、また
は、静電吸着,真空吸着等による基板を吸着しながら加
熱を行う形態のいずれでもよい。
The first heating element 3 and the second heating element 6 are connected to PI
Independent temperature control circuit 1 having D control function etc.
Stable and uniform heating is performed by controlling the temperature with 0 and 13. The installation form of the substrate 1 on the upper surface of the heat spreader 2 is as follows.
In addition to simply placing the substrate, a form in which a protrusion is provided on the surface of the thermal diffusion body 2 to perform heating while maintaining a small gap, or heating while adsorbing a substrate by electrostatic suction, vacuum suction, or the like is performed. Any of the forms may be used.

【0017】この基本構成において、第1の発熱体2と
第2の発熱体6には、内部絶縁されたシースヒータ、あ
るいはSi系のラバー等で絶縁され、所定のパターニン
グが施された面状のヒータのいずれでもよい。また、平
面断熱体4,内周側面断熱体5と外周側面断熱体7に
は、ポリイミド樹脂,ポリアミド樹脂,フッ素樹脂等、
金属と比較して熱拡散率が小さく、加工が容易な材料が
望ましい。また、熱拡散体2にはAl,Cu等の熱拡散
率が大きい金属が望ましい。
In this basic configuration, the first heating element 2 and the second heating element 6 are insulated by a sheath heater insulated internally or a Si-based rubber or the like, and are formed into a planar pattern that has been subjected to a predetermined patterning. Any of heaters may be used. The plane heat insulator 4, the inner peripheral side heat insulator 5 and the outer peripheral side heat insulator 7 are made of polyimide resin, polyamide resin, fluorine resin, or the like.
It is desirable to use a material which has a small thermal diffusivity as compared with metal and is easy to process. Further, as the thermal diffuser 2, a metal having a large thermal diffusivity such as Al or Cu is desirable.

【0018】以上が本発明の基本的な実施の形態である
が、図2(a)に示す回路図のように、本発明では第2
の発熱体6の温度制御回路を簡略化するために、第2の
温度センサ12に、測温抵抗体またはサーミスタ等のよ
うに温度によって抵抗値が大きく変化する特性(図2
(b))の素子Rcを用い、参照抵抗Rbとの抵抗値の
差によって生ずる電位差をオペアンプで予備的に増幅
し、リレーまたはSSRに入力し、第2の発熱体6のO
N−OFF制御を行う。
The above is the basic embodiment of the present invention. As shown in the circuit diagram of FIG.
In order to simplify the temperature control circuit of the heating element 6, the second temperature sensor 12 has a characteristic such that a resistance value greatly changes depending on the temperature, such as a resistance temperature detector or a thermistor (FIG. 2).
Using the element Rc of (b), a potential difference caused by a difference between the resistance value and the reference resistance Rb is preliminarily amplified by an operational amplifier and input to a relay or an SSR.
N-OFF control is performed.

【0019】この制御方法を正確に行うために、第2の
温度センサ12の温度Tと抵抗値Rc(T)の校正デー
タをあらかじめ測定し、設定温度T1に対応する抵抗値
Rc1に参照抵抗Rbを調整する。これは、図3に示す
ような第2の発熱体が複数必要となる場合に装置コスト
の面で有効な手段となる。
In order to perform this control method accurately, calibration data of the temperature T and the resistance value Rc (T) of the second temperature sensor 12 is measured in advance, and the resistance value Rc1 corresponding to the set temperature T1 is added to the reference resistance Rb. To adjust. This is an effective means in terms of apparatus cost when a plurality of second heating elements as shown in FIG. 3 are required.

【0020】図3において保温ケース8には通常、基板
1を出し入れするための開口部15と開口部15を封じ
るシャッタ16が必要となる。このシャッタ16が開い
たときに外気と内部の空気がある程度交換されるため、
第1の加熱プレートの開口部15近傍の温度は低下す
る。この温度むらを補正するために、第2の発熱体6を
複数に分割し、それぞれ独立に温度制御することによっ
て、熱の損失が外周部の各位置で異なる場合、それに対
応した熱の補給を行う。この場合、第2の発熱体6の温
度制御回路にはPID制御機能等を有する高性能な回路
を用いるより、図2で示した簡略化した回路を用いる事
がコスト的に有利である。
In FIG. 3, the heat retaining case 8 usually requires an opening 15 for taking the substrate 1 in and out, and a shutter 16 for sealing the opening 15. When the shutter 16 is opened, the outside air and the inside air are exchanged to some extent,
The temperature near the opening 15 of the first heating plate decreases. In order to correct the temperature unevenness, the second heating element 6 is divided into a plurality of parts, and the temperature is controlled independently of each other, so that when the heat loss is different at each position of the outer peripheral portion, the heat supply corresponding thereto is replenished. Do. In this case, it is more cost-effective to use the simplified circuit shown in FIG. 2 than to use a high-performance circuit having a PID control function or the like for the temperature control circuit of the second heating element 6.

【0021】次に、基板1の面方向からの熱の放出を抑
えることを目的として、第1の加熱プレートに対向した
位置に第2の加熱プレートを設置し、第2の加熱プレー
トを第1の加熱プレートと同じ設定温度にして基板1の
加熱を行う。
Next, for the purpose of suppressing the release of heat from the surface direction of the substrate 1, a second heating plate is installed at a position facing the first heating plate, and the second heating plate is connected to the first heating plate. The substrate 1 is heated at the same set temperature as that of the heating plate.

【0022】この構成を図4(a)に示す。第2の加熱
プレートの基本構成は次の通りである。第1の発熱体1
7の下面に、第1の発熱体17の熱を拡散させるための
熱拡散体18を、上面と外周側面に、熱の放出を抑制す
るための平面断熱体19と側面断熱体20が設置され、
かつ、熱拡散体18の中心部に、第1の発熱体を温度制
御するための第1の温度センサ21が埋設されている。
FIG. 4A shows this configuration. The basic configuration of the second heating plate is as follows. First heating element 1
7 is provided with a heat spreader 18 for diffusing the heat of the first heating element 17, and a flat heat insulator 19 and a side heat insulator 20 for suppressing heat release are provided on the upper surface and the outer peripheral side surface. ,
Further, a first temperature sensor 21 for controlling the temperature of the first heating element is buried in the center of the heat diffusion body 18.

【0023】この場合、第1の加熱プレートと第2の加
熱プレートの間隔hgは、周辺からの対流の影響を内部
に与えないようにするために、できるだけ小さい方が望
ましく、基板1の搬送に支障が無い程度まで小さくする
必要がある。また、第2の加熱プレートの温度制御の方
式は、第1の加熱プレートと第2の加熱プレートの間隔
hgの大きさに応じて適正化しなければならない。即
ち、基板1の加熱時の第1の加熱プレートと第2の加熱
プレートの間隔hgが10mm以上と大きい場合は、第2
の加熱プレートでの温度むらは基板温度分布にあまり影
響しないが、間隔hgを10mm以下に狭くした上で基板
1の温度均一性の精度を±0.1℃ 以下にするために
は、第2の加熱プレートを図1または図3に示すような
第1の加熱プレートと同様の構成を取る必要がある。
In this case, it is desirable that the distance hg between the first heating plate and the second heating plate be as small as possible in order to prevent the influence of convection from the surroundings from being applied to the inside. It is necessary to reduce the size to a level where there is no problem. Also, the method of controlling the temperature of the second heating plate must be optimized according to the size of the distance hg between the first heating plate and the second heating plate. That is, if the distance hg between the first heating plate and the second heating plate when the substrate 1 is heated is as large as 10 mm or more, the second
The temperature unevenness of the heating plate does not significantly affect the substrate temperature distribution. However, in order to make the accuracy of temperature uniformity of the substrate 1 ± 0.1 ° C. or less after narrowing the interval hg to 10 mm or less, the second Needs to have the same configuration as the first heating plate as shown in FIG. 1 or FIG.

【0024】即ち、図4(b)に示すように、第2の加
熱プレートの外周部に内周側面断熱体22と外周側面断
熱体23で挟み込まれた第2の発熱体24を設置し、熱
拡散体18の外周部かつ表面または表面下近傍に第2の
発熱体24を温度制御するための第2の温度センサ25
を埋設する。
That is, as shown in FIG. 4B, a second heating element 24 sandwiched between an inner peripheral side heat insulator 22 and an outer peripheral side heat insulator 23 is installed on the outer peripheral portion of the second heating plate. A second temperature sensor 25 for controlling the temperature of the second heating element 24 at the outer peripheral portion and near the surface or below the surface of the heat diffusion body 18
Buried.

【0025】あるいは、図5に示すように、第1の加熱
プレートまたは第2の加熱プレートに上下機構26,2
7を設け、基板1の搬送の際にはプレート間の間隔を空
け、基板の加熱の場合はプレート間の間隔を小さくして
加熱効率を向上させる。ここで、第2の加熱プレートの
外周部に保温リング28を設置し、第1の加熱プレート
と第2の加熱プレートの隙間を見かけ上封じることによ
って、第1の加熱プレートまたは第2の加熱プレートが
移動する際に生ずる気流の乱れを緩和することができ
る。
Alternatively, as shown in FIG. 5, the up-down mechanisms 26, 2 are attached to the first heating plate or the second heating plate.
The distance between the plates is increased when the substrate 1 is conveyed, and the distance between the plates is reduced when the substrate is heated, thereby improving the heating efficiency. Here, a heat retaining ring 28 is provided on the outer peripheral portion of the second heating plate, and a gap between the first heating plate and the second heating plate is apparently sealed to thereby form the first heating plate or the second heating plate. The turbulence of the air flow that occurs when the vehicle moves can be reduced.

【0026】[0026]

【発明の効果】以上の実施の形態で説明したように、本
発明によれば、個別に制御された発熱体によって、基板
の側面と上面からの熱の放出を正確に補給するため、温
度制御回路の温度設定の調整のみで広範囲な熱処理温度
においても均一な基板加熱が可能となる。
As described in the above embodiments, according to the present invention, the temperature control is performed by using the individually controlled heating elements to accurately supply heat from the side and top surfaces of the substrate. Only by adjusting the temperature setting of the circuit, uniform substrate heating can be performed even at a wide range of heat treatment temperatures.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の基本構成を有する実施例の1の加熱プ
レート部の縦断面図。
FIG. 1 is a vertical cross-sectional view of a heating plate unit according to a first embodiment having a basic configuration of the present invention.

【図2】第2の発熱体の制御回路の簡略化した回路図お
よび抵抗Rcの温度特性図。
FIG. 2 is a simplified circuit diagram of a control circuit of a second heating element and a temperature characteristic diagram of a resistor Rc.

【図3】第2の発熱体を複数設置した第1の加熱プレー
ト部の横断面図および縦断面図。
FIGS. 3A and 3B are a cross-sectional view and a vertical cross-sectional view of a first heating plate unit provided with a plurality of second heating elements.

【図4】第1の加熱プレートに第2の加熱プレートを付
加した実施例の縦断面図。
FIG. 4 is a longitudinal sectional view of an embodiment in which a second heating plate is added to a first heating plate.

【図5】図4の構成に上下機構と保温リングを付加した
実施例の縦断面図。
FIG. 5 is a longitudinal sectional view of an embodiment in which a vertical mechanism and a heat retaining ring are added to the configuration of FIG. 4;

【図6】従来技術の構成図。FIG. 6 is a configuration diagram of a conventional technique.

【符号の説明】[Explanation of symbols]

1…基板、2…熱拡散体、3…第1の発熱体、4…平面
断熱体、5…内周側面断熱体、7…外周側面断熱体、6
…第2の発熱体、8…保温ケース、9…第1の温度セン
サ、12…第2の温度センサ、10,13…温度制御回
路、11,14…電源、15…開口部、16…シャッ
タ、17…第1の発熱体、18…熱拡散体、19…平面
断熱体、20…側面断熱体、21…温度センサ、22…
内周側面断熱体、23…外周側面断熱体、24…第2の
発熱体、25…第2の温度センサ、26,27…上下機
構、28…保温リング。
DESCRIPTION OF SYMBOLS 1 ... board | substrate, 2 ... thermal diffusion body, 3 ... 1st heating element, 4 ... plane heat insulator, 5 ... inner peripheral side heat insulator, 7 ... outer peripheral side heat insulator, 6
... Second heating element, 8 ... Insulation case, 9 ... First temperature sensor, 12 ... Second temperature sensor, 10, 13 ... Temperature control circuit, 11,14 ... Power supply, 15 ... Opening, 16 ... Shutter , 17: first heating element, 18: thermal diffuser, 19: plane heat insulator, 20: side heat insulator, 21: temperature sensor, 22 ...
Inner peripheral side heat insulator, 23 ... outer peripheral side heat insulator, 24 ... second heating element, 25 ... second temperature sensor, 26, 27 ... vertical mechanism, 28 ... heat retaining ring.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 金友 正文 東京都国分寺市東恋ケ窪一丁目280番地 株式会社日立製作所中央研究所内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Masafumi Kinyu 1-280 Higashi Koigakubo, Kokubunji-shi, Tokyo Inside Central Research Laboratory, Hitachi, Ltd.

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】第1の発熱体と、前記第1の発熱体の上面
に、前記第1の発熱体の熱を拡散させるための熱拡散体
が設置され、下面に熱の放出を抑制するための断熱体が
設置され、かつ、前記熱拡散体の中心部に、前記第1の
発熱体を温度制御するための第1の温度センサが埋設さ
れることによって構成され、保温ケースによって外気と
隔離された第1の加熱プレートにおいて、前記第1の加
熱プレートの外周部に、断熱体で挟み込まれた第2の発
熱体を設置し、かつ、前記熱拡散体の外周部に前記第2
の発熱体を温度制御するための第2の温度センサを埋設
し、前記熱拡散体の上面に基板を設置し、前記第1の発
熱体と前記第2の発熱体をそれぞれ独立した温度制御回
路によって温度調節を行うことを特徴とする基板加熱装
置。
1. A first heat generating element and a heat diffuser for diffusing heat of the first heat generating element are provided on an upper surface of the first heat generating element, and a heat release is suppressed on a lower surface. And a first temperature sensor for controlling the temperature of the first heating element is buried in a central portion of the heat diffusion body, and a heat insulation case is provided between the first heat sensor and the outside air. In the isolated first heating plate, a second heating element sandwiched between heat insulators is provided on an outer peripheral portion of the first heating plate, and the second heating element is disposed on an outer peripheral portion of the heat diffusion body.
A second temperature sensor for controlling the temperature of the heating element is embedded, a substrate is provided on the upper surface of the heat diffusion body, and the first heating element and the second heating element are independent of each other. A substrate heating apparatus characterized in that the temperature is adjusted by the temperature.
【請求項2】前記第2の発熱体の温度制御に用いる前記
第2の温度センサに、測温抵抗体またはサーミスタのよ
うに温度によって抵抗値が大きく変化する特性の抵抗体
素子を用い、設定温度によって調整可能な参照抵抗との
抵抗値の差によって生ずる電位差を用いて発熱体のON
−OFF制御を行うことを特徴とする請求項1に記載の
基板加熱装置。
2. The method according to claim 1, wherein the second temperature sensor used for controlling the temperature of the second heating element is a resistor element such as a resistance thermometer or a thermistor having a characteristic whose resistance value largely changes depending on the temperature. The heating element is turned on by using a potential difference caused by a difference in resistance between the reference resistor and a reference resistor that can be adjusted by temperature.
The substrate heating apparatus according to claim 1, wherein -OFF control is performed.
【請求項3】前記第2の発熱体を複数に分割し、それぞ
れ独立に温度制御することによって、熱の損失が外周部
の各位置で異なる場合、それに対応した熱の補給を行う
ことを特徴とする請求項1または2に記載の基板加熱装
置。
3. The method according to claim 1, wherein the second heating element is divided into a plurality of parts, and the temperature is independently controlled, so that when the heat loss is different at each position of the outer peripheral part, the heat supply corresponding thereto is performed. The substrate heating apparatus according to claim 1 or 2, wherein
【請求項4】前記基板の面方向からの熱の放出を抑える
ことを目的として、前記第1の加熱プレートに対向した
位置に第2の加熱プレートを設置し、第2の加熱プレー
トを前記第1の加熱プレートと同じ設定温度にして基板
加熱を行うことを特徴とする請求項1ないし3のいずれ
か記載の基板加熱装置。
4. A second heating plate is provided at a position opposed to said first heating plate for the purpose of suppressing the release of heat from a surface direction of said substrate, and said second heating plate is connected to said second heating plate. 4. The substrate heating apparatus according to claim 1, wherein the substrate is heated at the same temperature as that of the first heating plate.
【請求項5】前記第1の加熱プレートまたは前記第2の
加熱プレートに上下機構を設け、前記基板の搬送の際に
は前記第1の加熱プレートと前記第2の加熱プレート間
の間隔を空け、前記基板の加熱の場合は前記第1の加熱
プレートと前記第2の加熱プレート間の間隔を小さく
し、かつ、前記第1の加熱プレートと前記第2の加熱プ
レートの隙間を見かけ上封じることのできる保温リング
を前記第2の加熱プレートの外周部に設置したことを特
徴とする請求項4に記載の基板加熱装置。
5. An up-and-down mechanism is provided on the first heating plate or the second heating plate, and an interval is provided between the first heating plate and the second heating plate when the substrate is transferred. In the case of heating the substrate, the distance between the first heating plate and the second heating plate is reduced, and the gap between the first heating plate and the second heating plate is apparently sealed. 5. The substrate heating apparatus according to claim 4, wherein a heat retaining ring capable of being mounted is provided on an outer peripheral portion of said second heating plate.
JP16179398A 1998-06-10 1998-06-10 Substrate heating device Pending JPH11354399A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16179398A JPH11354399A (en) 1998-06-10 1998-06-10 Substrate heating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16179398A JPH11354399A (en) 1998-06-10 1998-06-10 Substrate heating device

Publications (1)

Publication Number Publication Date
JPH11354399A true JPH11354399A (en) 1999-12-24

Family

ID=15742028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16179398A Pending JPH11354399A (en) 1998-06-10 1998-06-10 Substrate heating device

Country Status (1)

Country Link
JP (1) JPH11354399A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100497016B1 (en) * 2001-10-24 2005-06-28 니뽄 가이시 가부시키가이샤 A heating apparatus
CN117524930A (en) * 2023-11-07 2024-02-06 拓荆创益(沈阳)半导体设备有限公司 Temperature control system and method for double heating plates of semiconductor chamber

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100497016B1 (en) * 2001-10-24 2005-06-28 니뽄 가이시 가부시키가이샤 A heating apparatus
CN117524930A (en) * 2023-11-07 2024-02-06 拓荆创益(沈阳)半导体设备有限公司 Temperature control system and method for double heating plates of semiconductor chamber

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