JPH11339937A - Temperature control device, method for manufacturing temperature control device, temperature sensor, and method for manufacturing temperature sensor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To uniformly heat a temperature controlled object by providing an insulating layer laminated with a temperature sensor and heating resistor linear bodies via an insulating film on the surface of a base mounted with the temperature controlled object. SOLUTION: A sheet material provided with a leader line conductive film 32 is applied to the surface of a first support insulating film 31, and etching is applied to the leader line conductive film 32 to form three leader line conductive patterns 32'. Conductive lines are arranged between independent tip sections and connected to the leader line conductive patterns 32', and temperature- sensitive section conductive patterns 33 are formed. Heating resistor linear bodies 20 are provided on the back face of the support insulating film 31 by direct thermal spraying, electrodeposition or other methods, the heating resistor linear bodies 20 are covered with a covering insulating film 50, and the support insulating film 31 is bonded to the upper face of a base plate 1 by the covering insulating film 50. The leader line conductive patterns 32' and the temperature- sensitive section conductive patterns 33 are covered with a covering insulating film 50b to form an insulating layer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a temperature control device, a method for manufacturing a temperature control device, a temperature sensor, and a method for manufacturing a temperature sensor.

[0002]

2. Description of the Related Art In a semiconductor manufacturing process, a pre-bake for heating a semiconductor wafer to remove a solvent remaining in a coated resist film, and a semiconductor wafer for facilitating adhesion between a resist and a substrate before etching are performed. A heating process such as post-baking is included, and
Cooling processes such as cooling, which cools heated semiconductor wafers to room temperature each time, are included, and in each of these processes, efficient and accurate temperature control of semiconductor wafers is important for improving throughput. Becomes In particular, since the next step of the pre-bake is exposure and the next step of the post-bake is etching, quite strict conditions are required for the wafer temperature distribution in order to be able to shift to these steps promptly. .

As a wafer temperature control device used in the above-described heating step, a device in which a thin film heater is arranged on a base on which a wafer is mounted is applied. The thin-film heater includes a heating resistor linear body formed in an appropriate pattern, and an insulating resin covering the heating resistor linear body, and is adhered to the surface of the base, and generates heat from the heating resistor linear body. Thus, the wafer mounted on the base is heated.

In the case of heating, usually, an air layer is formed by securing a certain gap between the thin film heater and the wafer, and a wafer having a temperature distribution generated in the thin film heater by passing through the air layer. To reduce the impact on

[0005]

In order to uniformly heat the wafer by applying the above-described thin film heater, the actual heating temperature of the heating resistor linear body is accurately measured, and based on the measurement result, Therefore, it is necessary to control the energization of the heating resistor linear body. In this case, it is needless to say that it is preferable to dispose the temperature sensor very close to the heating resistor linear body.

However, when a temperature sensor is attached to the surface of a thin-film heater, for example, the heat transfer coefficient of the portion where the temperature sensor is disposed becomes extremely high, which causes a temperature distribution on the wafer.

When a temperature sensor is arranged between the thin film heater and the base, the distance between the thin film heater and the wafer is not constant, resulting in a temperature distribution on the wafer.

For this reason, conventionally, a temperature sensor must be arranged inside the base to measure the temperature of the heating resistor linear body via the base, and the reliability of the energization control based on the measurement result has to be measured. Is significantly impaired, which results in a temperature distribution on the wafer.

In view of the above circumstances, the present invention provides a temperature control device capable of uniformly heating an object to be temperature-controlled and a method of manufacturing the same, and a temperature sensor suitable for the temperature control device and a method of manufacturing the same. Is the task to be solved.

[0010]

Means for Solving the Problems and Functions and Effects
According to the invention described in the above, in the temperature control device for controlling the temperature of the temperature-controlled object mounted on the base, an insulating layer in which a temperature sensor and a heating resistor linear body are laminated via an insulating film is used as the base. Provided on the surface.

According to the first aspect of the present invention, since the temperature sensor is provided integrally inside the insulating layer covering the heating resistor linear body, the temperature distribution is controlled on the object to be controlled. It is possible to accurately measure the temperature of the heating resistor linear body in the very vicinity thereof without inviting.

Therefore, it is possible to accurately control the energization of the heating resistor linear body based on the measurement result, and to uniformly heat the object to be temperature-controlled.

According to a second aspect of the present invention, a step of forming a temperature sensor on one surface of the supporting insulating film and laying a heating resistor wire on the other surface of the supporting insulating film;
Forming a first covering insulating film covering the temperature sensor on one surface of the supporting insulating film, and forming a second covering insulating film covering the heating resistor linear body on the other surface of the supporting insulating film; And a step of forming a film.

In this case, the step of forming the first coating insulating film and the step of forming the second coating insulating film may be performed first, or both steps may be performed simultaneously.

According to the second aspect of the present invention, since the temperature sensor and the heating resistor linear body are formed on the common supporting insulating film, the temperature sensor and the heating resistor linear body are formed in a state where both insulating properties are sufficiently ensured. Thinning can be improved.

In addition, the first coating insulating film or the second
When the insulating film for covering is formed, the insulating film can be used to adhere to the surface of the base, and the manufacturing process can be simplified.

According to the third aspect of the present invention, a step of forming a temperature sensor on the surface of the first supporting insulating film, and a step of laying a heating resistor linear body on the surface of the second supporting insulating film;
Bonding the first and second supporting insulating films to each other with a covering insulating film in a state where the surfaces are opposed to each other.

In this case, any of the step of forming the temperature sensor and the step of laying the heating resistor linear body may be performed first, or both steps may be performed simultaneously.

According to the third aspect of the present invention, the first
Since the supporting insulating film and the second supporting insulating film are bonded to each other by the common covering insulating film, the thickness can be reduced.

In addition, since both the front and back surfaces of the temperature control device are defined by the supporting insulating film, it is not necessary to flatten these surfaces and the work can be facilitated.

According to a fourth aspect of the present invention, a step of forming a temperature sensor on the surface of the first supporting insulating film, and a step of laying a heating resistor wire on the surface of the second supporting insulating film;
Forming a first coating insulating film covering the temperature sensor on a surface of the first supporting insulating film, and forming a second coating covering the heating resistor linear body on a surface of the second supporting insulating film; Forming one of the first coating insulating film and the second coating insulating film, and using the coating insulating film to replace one supporting insulating film with the other supporting insulating film. And a step of adhering to the back surface.

In this case, any of the step of forming the temperature sensor and the step of laying the heating resistor linear body may be performed first, or both steps may be performed simultaneously. Similarly, the order of forming the first insulating film and forming the second insulating film is not limited.

According to the fourth aspect of the invention, one of the first supporting insulating film and the second supporting insulating film is interposed between the temperature sensor and the heating resistor linear body. Therefore, the temperature sensor and the heating resistor linear body can be reliably insulated regardless of the thickness of the first coating insulating film or the second coating insulating film.

According to the fifth aspect of the present invention, the temperature sensor is formed by forming the conductive pattern for the temperature sensing portion and the conductive pattern for the lead wire on the insulating film for support.

According to the fifth aspect of the present invention, since the temperature sensor is formed in the form of a thin film, when the temperature sensor is applied to the above-described temperature control device, for example, the effect on the heating action of the heating resistor linear body is extremely small. Few.

According to a sixth aspect of the present invention, in the fifth aspect of the invention, the conductive pattern for the temperature sensing portion and the conductive pattern for the lead wire are further covered with an insulating film.

According to the invention described in claim 6, the temperature sensor can be used as a single unit other than the temperature control device described above.

According to a seventh aspect of the present invention, a conductive pattern for a lead line is formed on a supporting insulating film, and a conductive pattern is formed on the supporting insulating film by forming a conductive line on the supporting insulating film. And the step of performing

According to the seventh aspect of the present invention, since the conductive pattern is formed by arranging the conductive wires, large-scale equipment such as etching, thermal spraying, and vapor deposition is used. There is no need, and the temperature sensor can be manufactured easily and inexpensively.

In the method according to the present invention, a step of forming a conductive pattern for a temperature-sensitive portion on a work plate having heat resistance, and a step of forming an insulating support for covering the conductive pattern for the temperature-sensitive portion on the work plate. The method includes a step of forming a film and a step of removing the work plate.

In this case, according to the ninth aspect of the present invention, a step of forming a lead conductive film on the work plate in advance before forming the conductive pattern for the temperature sensing portion, and a step of removing the work plate. Forming a conductive pattern for a lead-out line by etching the conductive film for a lead-out line.

According to the eighth and ninth aspects of the present invention, since the heat-resistant work plate is applied, even when platinum with higher precision is applied as the conductive pattern for the temperature sensing portion, the present invention is not limited to this. Can be formed by vapor deposition or thermal spraying.

Accordingly, the work of connecting the conductive pattern for the temperature sensing part and the conductive pattern for the lead wire becomes unnecessary, and the working process can be simplified.

In the method of the present invention, the lead conductive film is formed on the work plate by etching the lead conductive film before forming the temperature-sensitive part conductive pattern. Alternatively, it is also possible to form a conductive pattern for a lead by forming a conductive film for a lead in a portion where the work plate is removed, and further etching the conductive film for a lead. .

[0035]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings showing one embodiment. FIG. 1 shows an embodiment of a temperature control device according to the present invention. The temperature control devices exemplified here include the following (1) to (8)
It is used in (3) or (4) in a semiconductor manufacturing process of forming a resist film through a process.

(1) Wafer cleaning (2) Resist coating (3) Pre-baking (110-130 ° C.) + Cooling (20 ° C.) (4) Exposure (5) Development (6) Rinsing (7) Post-baking (120-130) (150 ° C.) + Cooling (20 ° C.) (8) Etching In the processes (3) and (4), first, the wafer W to be controlled is heated to a high temperature (baking), and then the wafer W is cooled to room temperature. Control for repeating a cycle of cooling (cooling) at intervals of several tens of seconds for each wafer is performed.

That is, this temperature control device has two target temperatures, ie, a target temperature for heating and a target temperature for cooling, and performs control for alternately repeating heating and cooling.

As shown in FIG. 1, this temperature control device
A base plate (base) 1 is formed in a hollow cylindrical shape from a material having high thermal conductivity such as aluminum, an aluminum alloy, or alumina (Al2 O3).

The base plate 1 is installed with its upper surface horizontal, and has a discharge port 1a and an inflow port 1b on its bottom wall.

The outlet 1a of the base plate 1 is connected to the heat storage tank 3 through the discharge passage 2, and the inlet 1b of the base plate 1 is connected to the heat storage tank 3 through the supply passage 4.
It is connected to the.

The heat storage tank 3 stores therein a temperature fluid such as a fluorocarbon liquid (= Fluorinert: registered trademark), ethylene glycol, oil, water, nitrogen, air, helium, etc. By circulating this temperature fluid, the temperature fluid is adjusted and maintained at a temperature near 20 ° C.

This temperature control device has a heating means 10 on the upper surface of the base plate 1.

The heating means 10 has a disk shape having the same outer diameter as the upper surface of the base plate 1, and has an insulating layer 11.
Is provided with a heating resistor linear body 20 and a temperature sensor 30.

The heating resistance linear body 20 is made of a metal having a high electric resistance per unit length, such as a nickel chromium alloy or an iron chromium alloy, or an alloy thereof.
When the heating power is supplied from the power supply control unit 40, heat is generated and the wafer W is heated.

Although not explicitly shown in the drawing, the heating resistor linear body 20 is disposed in a single layer inside the insulating layer 11 in such a shape that the entire area thereof has an equal heating density.

The temperature sensor 30 has a side view in FIG. 5 (3), a plan view in (3a), a side view in FIG.
As shown in the bottom view of FIG. 2, the thin film formed on the supporting insulating film 31 measures the temperature of the heating means 10, and outputs the measurement result to the energization control unit 40.

Hereinafter, two embodiments of a method of manufacturing the temperature sensor 30 will be described with reference to FIGS. 5 and 6, and the temperature sensor 3 manufactured by these methods will be described.
Three examples of the method of manufacturing the heating means 10 to which 0 is applied will be described with reference to FIGS.

[First Embodiment of Temperature Sensor Manufacturing Method] FIG.
The first embodiment shown in FIG. 5 is a side view of FIG.
As shown in the plan view of a), the temperature sensor 30 is manufactured by using a sheet material S in which a conductive film 32 for a lead wire is provided on the surface of an insulating film 31 for support.

The supporting insulating film 31 is made of a heat-resistant insulating resin thin film (1) such as polyimide resin or polytetrafluoroethylene (= Teflon: trade name) resin.
0 to 25 μm) can be applied.

The lead conductive film 32 is formed of a thin film (10 to 10) of an etchable metal such as copper, stainless steel, nickel, gold, silver or the like, which is a good conductor and can be etched.
25 μm) can be applied.

First, as shown in the side view of FIG. 5B and the plan view of FIG.
Is etched, and the three conductive patterns 3 for lead wires are etched.
Form 2 '.

The lead-out conductive pattern 32 'is a part to be a lead-out line of the temperature sensor 30, and two adjacent ones of the three are conductive at the tip.

Next, the side view of FIG. 5 (3) and (3a)
As shown in the plan view, a conductive wire is arranged between the distal ends of the independent lead-out conductive patterns 32 ', and both ends are connected to the lead-out conductive patterns 32', respectively, to thereby form the supporting insulating film 31. Then, a conductive pattern 33 for a temperature sensing part is formed.

The conductive pattern 33 for the temperature sensing portion is a portion to be a temperature measuring portion of the temperature sensor 30 and has a length of a platinum conductive wire (φ10 μm) having a required resistance value (100Ω).
Has been applied. In addition to platinum, nickel or copper can be used.

The connection between the conductive pattern 33 for the temperature sensing portion and the conductive pattern 32 'for the lead wire can be made by soldering or spot welding.

It is preferable that the conductive wires disposed on the supporting insulating film 31 be attached to the supporting insulating film 31.
In this case, the conductive wire can be attached to the supporting insulating film 31 by using an adhesive or by pressing while heating.

The temperature sensor 30 applied to the heating means 10 can be manufactured by the above steps.
As shown in the side view of (4), the lead-out conductive pattern 3
If the 2 'and the conductive pattern 33 for the temperature sensing part are respectively covered with the insulating film 34, it can be used as a normal temperature sensor 30'.

In the first embodiment, since the conductive pattern 33 is formed by applying a conductive wire, it is not necessary to use a large-scale facility such as etching, thermal spraying, or vapor deposition. The temperature sensor 30 can be manufactured at low cost.

However, when a metal that can be sprayed or vapor-deposited at a temperature lower than the melting temperature of the supporting insulating film 31 (about 150 to 250 ° C.) is selected, the thermal spraying or vapor-depositing is performed by using such a metal. It is also possible to form the conductive pattern 33.

[Second Embodiment of Temperature Sensor Manufacturing Method] FIG.
In the second embodiment, as shown in the side view of FIG. 6A, the temperature sensor 30 is manufactured using the work plate 35.

The work plate 35 has a flat upper surface and has heat resistance even at a temperature (about 800 ° C.) required for depositing platinum such as iron.

First, in the second embodiment, as shown in the side view of FIG. 6 (2), the conductive film 32 for the lead wire is formed on the upper surface of the work plate 35.

As the lead conductive film 32, as in the first embodiment, an electrically conductive, etchable metal formed into a thin film (10 to 25 μm) by vapor deposition or thermal spraying can be used. .

Next, the side view of FIG. 6 (3) and (3a)
As shown in the plan view, a conductive pattern 33 for a temperature sensing portion is formed on the upper surface of the conductive film 32 for a lead wire.

Here, in the second embodiment, the conductive pattern 3 for the temperature sensing portion is placed on the work plate 35 having heat resistance.
3, the thermal spraying and vapor deposition can be performed even when platinum is selected as the conductive pattern 33 for the temperature sensing part.

For this reason, there is no need to connect the temperature-sensitive portion conductive pattern 33 and the lead-out conductive pattern 32 ′, which will be described later, and the working process can be simplified as compared with the first embodiment. become able to.

However, as in the first embodiment, the conductive pattern 33 may be formed by applying a conductive wire.

Next, as shown in the side view of FIG.
By forming the supporting insulating film 31 on the work plate 35, the conductive pattern 33 for the temperature sensing portion and the conductive film 32 for the lead wire are covered.

As the supporting insulating film 31, as in the first embodiment, an insulating resin thin film having heat resistance (10 to 25 μm) is used.
m) can be applied.

Next, as shown in the side view of FIG.
The working plate 3 is formed from the conductive pattern 33 for the temperature sensing portion and the conductive film 32 for the lead wire covered with the insulating film 31 for support.
5 is removed.

In this case, the conductive film 32 for the lead wire and the work plate 35 may be separated, or the work plate 35 may be melted and removed.

Further, the side view of FIG. 6 (6) and (6a)
As shown in the bottom view of FIG. 5, the lead conductive film 32 is etched to form two lead conductive patterns 32 ′ connected to respective ends of the temperature-sensitive part conductive pattern 33.

In this case, it is necessary to use an etchant that does not dissolve the temperature-sensitive portion conductive pattern 33. For example, when the conductive pattern 33 for the temperature sensing part is platinum and the conductive film 32 for the lead wire is copper, an aqueous solution of ferric chloride may be applied.

The temperature sensor 30 applied to the heating means 10 can be manufactured by the above steps.
As shown in the side view of (7), the lead conductive pattern 3
If the 2 'and the conductive pattern 33 for the temperature sensing part are respectively covered with the insulating film 34, it can be used as a normal temperature sensor 30'.

In the second embodiment, the conductive film 32
The conductive pattern 33 for the temperature sensing part is formed on the upper surface of the lead plate, but before the conductive pattern 33 for the temperature sensing part is formed, the lead line conductive film 32 is etched in advance to form the lead line on the work plate 35. May be formed.

It is also possible to form the conductive pattern 33 for the temperature sensing portion and the insulating film 31 for support directly on the upper surface of the work plate 35. In this case, the conductive film 32 for the lead wire is formed at the portion where the work plate 35 is removed, and the conductive film 32 for the lead wire is etched to form the conductive pattern 32 'for the lead wire.

In the manufacturing methods of the first and second embodiments, the supporting insulating film 31 may be provided only on a portion necessary for the temperature sensor 30. For example, the supporting insulating film 31 is large enough to cover the entire upper surface of the base plate 1. It is also possible to apply the supporting insulating film 31 and manufacture the temperature sensor 30 on a part of this. In this case, the etching may be performed on all parts other than the lead-out conductive pattern 32 ′, or may be performed only on the periphery of the lead-out conductive pattern 32 ′.

[First Embodiment of Heating Means Manufacturing Method] In this first embodiment, as shown in FIG. 2A, a supporting insulating film 31 is further added to the temperature sensor 30 manufactured by the above-described method. In this example, a heating resistor linear body 20 is laid on the back surface.

In this case, the temperature sensor 30 needs to have a supporting insulating film 31 large enough to cover the entire upper surface of the base plate 1, and in FIG. 2 (1) to FIG. This shows an example in which everything except the conductive pattern 32 'is etched.

As the heating resistor linear member 20, a linear member or a member punched out of a flat plate into a desired shape may be used, and this may be adhered to the back surface of the supporting insulating film 31. Alternatively, it may be laid directly on the back surface of the supporting insulating film 31 by another method such as thermal spraying or electrodeposition.

Next, as shown in FIG. 2 (2), the heating resistance linear body 20 is covered with the covering insulating film 50a, and the supporting insulating film 31 is covered with the covering insulating film 50a.
Is adhered to the upper surface of the base plate 1.

As the coating insulating film 50a, a liquid insulating resin having heat resistance, which is cured after coating, is used.

Further, as shown in FIG. 2C, the lead-out conductive pattern 32 ′ and the temperature-sensitive part conductive pattern 33 of the temperature sensor 30 are covered with the covering insulating film 50 b.
If the upper surface is flattened, it is possible to manufacture the heating means 10 in which the temperature sensor 30 and the heating resistor linear body 20 are laminated via the supporting insulating film 31. In this case, the insulating layer 11 of the heating unit 10 is constituted by the supporting insulating film 31 and the covering insulating films 50a and 50b.

In the first embodiment, since the temperature sensor 30 and the heating resistor linear body 20 are formed on the common supporting insulating film 31, a state in which the insulating properties of both are sufficiently ensured is employed. Thus, the film thickness can be improved.

Further, since the supporting insulating film 31 is adhered to the base plate 1 by using the covering insulating film 50a, the manufacturing process can be simplified.

In this case, the coating insulating films 50a and 50b
Either the temperature sensor 30 or the heating resistor linear body 20 may be coated first, or both may be coated simultaneously.
Further, the heating resistor linear member 20 is not necessarily connected to the base plate 1.
It is not necessary to make the conductive pattern 32 ′ for the lead wire and the conductive pattern 33 for the temperature sensing part of the temperature sensor 30 face the base plate 1.

FIG. 2D shows the temperature sensor 30 in which only the periphery of the lead-out conductive pattern 32 ′ is etched.
2 shows the heating means 10 in the case where is applied.

[Second Embodiment of Heating Means Manufacturing Method] In this second embodiment, as shown in FIG. 3A, first, as shown in FIG. Then, a supporting insulating film 21 on which 20 is laid is manufactured.
Hereinafter, for the sake of convenience, the supporting insulating film on which the temperature sensor 30 is formed is referred to as a first supporting insulating film 31, and the supporting insulating film on which the heating resistor linear body 20 is laid is referred to as a second supporting insulating film 21.

In this case, the temperature sensor 30 may have any size as the first supporting insulating film 31.
3 (1) to 3 (3) have a first supporting insulating film 31 large enough to cover the entire upper surface of the base plate 1, and all parts except the lead-out conductive pattern 32 'are etched. Is exemplified.

The second supporting insulating film 21 needs to have a size that covers the entire upper surface of the base plate 1.

Next, as shown in FIG. 3B, the second supporting insulating film 21 is bonded to the upper surface of the base plate 1 by the bonding insulating film 51.

In this case, the heating resistor linear body 20 is adhered to the base plate 1 via the back surface so as to face upward.

As the bonding insulating film 51, the same one as the coating insulating films 50a and 50b is applied.

Further, as shown in FIG. 3 (3), the first supporting insulation is provided such that the lead-out conductive pattern 32 ′ and the temperature-sensitive part conductive pattern 33 of the temperature sensor 30 face the heating resistor linear body 20. If the films 31 are arranged and they are adhered to each other by the coating insulating film 50, the coating insulating film 5 is formed.
Thus, the heating means 10 in which the temperature sensor 30 and the heat-generating resistor linear body 20 are laminated via the heating means 10 can be manufactured. In this case, the first and second supporting insulating films 31 and 21 and the covering insulating film 50 constitute the insulating layer 11 of the heating unit 10.

In the second embodiment, the first supporting insulating film 3
The first and second supporting insulating films 21 are made of a common covering insulating film 5
Since they are adhered to each other by 0, the thickness can be reduced.

Moreover, since both the front and back surfaces of the heating means 10 are defined by the supporting insulating films 21 and 31, these surfaces do not need to be separately flattened, thus facilitating the work. it can.

Either the bonding insulating film 51 or the coating insulating film 50 may be formed first, or both may be formed simultaneously. Furthermore, the second supporting insulating film 2 is not necessarily required.
1 does not need to be bonded to the base plate 1, and the first supporting insulating film 31 may be bonded to the base plate 1.

FIG. 3D shows the first supporting insulating film 31.
Is a size that covers the entire upper surface of the base plate 1 and that applies a temperature sensor 30 in which only the periphery of the lead-out conductive pattern 32 'is etched.
It is shown.

FIGS. 3 (5) and (6) show the temperature sensor 3
0 shows a heating means 10 in the case where a member having the first supporting insulating film 31 only in a portion necessary for 0 is applied,
(5) is the one in which the side area of the temperature sensor 30 is filled with the insulating film 50 for coating, and (6) is the one in which the insulating resin 52 cured in advance is arranged in the side area of the temperature sensor 30.

[Third Embodiment of Heating Means Manufacturing Method] In the third embodiment, similarly to the second embodiment, the temperature sensor 30 manufactured by the above-described method and the heating resistance linear body 20 And a supporting insulating film 21 on which is laid. Hereinafter, similarly to the second embodiment, the supporting insulating film on which the temperature sensor 30 is formed is referred to as a first supporting insulating film 31,
The supporting insulating film on which 0 is laid is referred to as a second supporting insulating film 21.

In this case, the temperature sensor 30 may have any size as the first supporting insulating film 31.
4 (1) to 4 (3), the first supporting insulating film 31 is large enough to cover the entire upper surface of the base plate 1, and all parts other than the lead-out conductive patterns 32 'are etched. Is exemplified.

The second supporting insulating film 21 needs to have a size to cover the entire upper surface of the base plate 1.

Next, as shown in FIG. 4 (2), the second supporting insulating film 21 is bonded to the upper surface of the base plate 1 by the bonding insulating film 51.

In this case, the linear heating element 20 is adhered to the base plate 1 via the back surface so as to face upward.

Next, as shown in FIG. 4 (3), the first supporting insulating film 3 is formed such that the lead-out conductive pattern 32 ′ and the temperature-sensitive part conductive pattern 33 of the temperature sensor 30 are located above.
1 are arranged above the second supporting insulating film 21, and they are bonded to each other by the covering insulating film 50 a.

Further, as shown in FIG. 4D, the lead-out conductive pattern 32 'and the temperature-sensitive part conductive pattern 33 of the temperature sensor 30 are covered with a covering insulating film 50b.
By flattening the upper surface, the heating means 10 in which the temperature sensor 30 and the heating resistor linear body 20 are laminated via the coating insulating film 50a and the first supporting insulating film 31 can be manufactured. In this case, the first and second supporting insulating films 31,
The insulating layer 11 of the heating means 10 is composed of the insulating film 21 and the insulating films 50a and 50b for covering.

In the third embodiment, since the first supporting insulating film 31 is interposed between the temperature sensor 30 and the heating resistor linear body 20, the covering insulating film 50a is provided therebetween.
Irrespective of the thickness of the wire, the temperature sensor 30 and the heating resistor linear body 20 can be insulated reliably.

The bonding insulating film 51 and the coating insulating film 50a,
50b may be formed first, or both may be formed simultaneously. Further, the second supporting insulating film 21 does not necessarily have to be bonded to the base plate 1, and the first supporting insulating film 31 may be bonded to the base plate 1. The temperature sensor 30
And the heating resistor linear body 20 are respectively connected to the base plate 1.
May be opposed.

FIG. 4D shows the first supporting insulating film 31.
Is a size that covers the entire upper surface of the base plate 1 and that applies a temperature sensor 30 in which only the periphery of the lead-out conductive pattern 32 'is etched.
It is shown.

FIGS. 4 (5) and (6) show the temperature sensor 3
0 shows a heating means 10 in the case where a member having the first supporting insulating film 31 only in a portion necessary for 0 is applied,
(5) is an insulating film 50b for covering the side area of the temperature sensor 30.
(6) is one in which an insulating resin 52 cured in advance is arranged in a side area of the temperature sensor 30.

Hereinafter, the operation of the temperature control device configured as described above, in which baking performed at a high temperature of the wafer W and cooling that subsequently cools the temperature of the wafer W to the room temperature level are performed alternately. explain.

First, in the temperature control device, when in the startup standby state, the open / close valve 7 is turned off while the supply pump 6 is operated, and the temperature fluid stored in the heat storage tank 3 is transferred to the self-circulation system 8 and the chiller tank 5. Circulate between the two.

In this startup standby state, since the temperature fluid stored in the heat storage tank 3 is circulated by the self-circulation system 8, there is a possibility that a temperature distribution will occur in the temperature fluid inside the heat storage tank 3. Absent.

When the wafer W coated with the resist is placed on the upper surface of the heating means 10 from the above-described standby state,
Predetermined heating power is supplied from the power supply control unit 40, and the heating resistor linear body 20 enters a heating state. In this embodiment,
A shim 12 is arranged on the upper surface of the heating means 10, and an air layer of about 0.1 mm is provided between the shim 12 and the wafer W.

In this state, the heating resistance linear body 20
The heat generated from is transmitted to the wafer W via the air layer,
The wafer W is immediately heated and maintained at a high temperature, and baking of the wafer W can be performed.

During this time, the energization control section 40 monitors the temperature measured by the temperature sensor 30 and controls the amount of energization to the heating resistor linear body 20 based on the measurement result.

Here, in the above temperature control device, as described above, since the temperature sensor 30 is provided inside the insulating layer 11 covering the heating resistor wire 20, the distance to the wafer W and the wafer With the heat transfer coefficient to W uniform, the temperature of the heating resistor linear body 20 can be accurately measured in the very vicinity thereof.

Therefore, it is possible to accurately control the energization of the heating resistor linear body 20 based on the measurement result.

In addition, since the temperature sensor 30 interposed between the heating resistor linear body 20 and the wafer W is formed in a thin film shape, the effect on the heating action of the heating resistor linear body 20 on the wafer W is not affected. Very few.

As a result, according to the temperature control device, the wafer W can be uniformly heated, and the baking of the wafer W can be performed efficiently and with high accuracy.

When the above-described baking is completed, the supply of heating power to the heating resistor linear body 20 is stopped, the on-off valve 7 is turned on, and the temperature fluid near 20 ° C. stored in the heat storage tank 3 is turned on. Is circulated and supplied to the hollow portion of the base plate 1 through the supply passage 4 and the discharge passage 2.

In this state, the air layer, the heating means 1
The heat of the wafer W is radiated to the temperature fluid via the base plate 1 and the temperature coefficient 0, and the wafer W is immediately cooled and maintained at the room temperature level, so that the wafer W can be cooled.

When the cooling is completed as described above, the wafer W is replaced with a new wafer W, and the new wafer W is subjected to baking and cooling in the same manner as described above.

In the above-described embodiment, the temperature control device for controlling the temperature of the wafer W in the semiconductor manufacturing process is exemplified. However, the temperature control device for controlling the temperature of the object to be temperature-controlled is of course also included. It is possible to apply. In this case, the object to be temperature-controlled need not necessarily be formed in a disk shape, and the base need not be formed in a columnar shape. Further, the temperature control device does not necessarily need to include a cooling-side unit.

[Brief description of the drawings]

FIG. 1 is a diagram conceptually showing an embodiment of a temperature control device according to the present invention.

FIG. 2 is a view showing a first embodiment of a manufacturing process of the heating means shown in FIG. 1;

FIG. 3 is a view showing a second embodiment of the manufacturing process of the heating means shown in FIG. 1;

FIG. 4 is a view showing a third embodiment of the manufacturing process of the heating means shown in FIG. 1;

FIG. 5 is a view showing a first embodiment of a manufacturing process of the temperature sensor shown in FIG. 1;

FIG. 6 is a view showing a second embodiment of the manufacturing process of the temperature sensor shown in FIG. 1;

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Base plate, 10 ... Heating means, 11 ... Insulating layer,
Reference numeral 20: heating resistance linear member, 21: second supporting insulating film, 30
... Temperature sensor, 31 ... First supporting insulating film, 32 ... Lead wire conductive film, 32 '... Lead wire conductive pattern, 33 ... Temperature sensing part conductive pattern, 34 ... Insulating film, 35 ... Work plate, 50 , 50a, 50b: insulating film for coating; W: wafer.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Toshio Yoshimitsu 1200 Manda, Hiratsuka-shi, Kanagawa Prefecture, Komatsu Ltd.

Claims (9)

[Claims] 1. A temperature control device for controlling the temperature of an object to be temperature-controlled mounted on a base, wherein an insulating layer formed by laminating a temperature sensor and a heating resistor linear body via an insulating film is provided on a surface of the base. A temperature control device, characterized in that it is provided in a temperature control device. 2. A step of forming a temperature sensor on one surface of the supporting insulating film and laying a heating resistance linear body on the other surface of the supporting insulating film; and forming the temperature sensor on one surface of the supporting insulating film. Forming a first covering insulating film covering the temperature sensor; and forming a second covering insulating film covering the heating resistor linear body on the other surface of the supporting insulating film. A method for manufacturing a temperature control device. 3. A step of forming a temperature sensor on a surface of the first supporting insulating film, a step of laying a heating resistor linear body on a surface of the second supporting insulating film, and a state in which the surfaces are opposed to each other. Bonding the first supporting insulating film and the second supporting insulating film to each other with a covering insulating film. 4. A step of forming a temperature sensor on a surface of the first supporting insulating film; a step of laying a heating resistor linear body on a surface of the second supporting insulating film; Forming a first coating insulating film covering the surface of the temperature sensor; and forming a second coating insulating film covering the heating resistor wire on a surface of the second supporting insulating film. Bonding one of the supporting insulating films to the back surface of the other supporting insulating film using the covering insulating film when forming one of the first covering insulating film and the second covering insulating film. A method for manufacturing a temperature control device, comprising: 5. A temperature sensor comprising a conductive pattern for a temperature sensing portion and a conductive pattern for a lead wire formed on a supporting insulating film. 6. The temperature sensor according to claim 5, wherein the conductive pattern for the temperature sensing portion and the conductive pattern for the lead wire are further covered with an insulating film. 7. A method of forming a conductive pattern for a lead line on a supporting insulating film, and a step of forming a conductive pattern for a temperature sensing part by arranging a conductive line on the supporting insulating film. A method for manufacturing a temperature sensor. 8. A step of forming a conductive pattern for a temperature-sensitive part on a work plate having heat resistance, a step of forming a supporting insulating film for covering the conductive pattern for a temperature-sensitive part on the work plate; Removing the working plate. 9. A step of forming a lead conductive film on the work plate before forming the temperature-sensitive part conductive pattern, and etching the lead conductive film after removing the work plate. 9. A method of manufacturing a temperature sensor according to claim 8, further comprising the step of: forming a conductive pattern for a lead line by applying.