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JPH11312827A - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
JPH11312827A
JPH11312827A JP11854698A JP11854698A JPH11312827A JP H11312827 A JPH11312827 A JP H11312827A JP 11854698 A JP11854698 A JP 11854698A JP 11854698 A JP11854698 A JP 11854698A JP H11312827 A JPH11312827 A JP H11312827A
Authority
JP
Japan
Prior art keywords
light
directional angle
light emitting
emitted
converging lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP11854698A
Other languages
Japanese (ja)
Inventor
Yasushi Akiba
泰史 秋庭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP11854698A priority Critical patent/JPH11312827A/en
Publication of JPH11312827A publication Critical patent/JPH11312827A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H10W72/884
    • H10W74/10
    • H10W90/756

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting diode, wherein light is emitted over a desired irradiation range by displacing directional angle to a specified directional angle with ease. SOLUTION: A semiconductor light-emitting element 1 which emits light, and a focusing lens 2 which comprising a projecting top part 21, converges the emitted light to discharge light having a directional angle δ with an optical axis 22 as center are provided. Here, the focusing lens 2, a ruggedness 23 which scatters the emitted light to displace the directional angle δ to a specified directional angle δ 1 is provided at the top part 21.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体発光素子を
用いた発光ダイオードに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode using a semiconductor light emitting device.

【0002】[0002]

【従来の技術】従来、この種の発光ダイオードとして、
図4に示す構成のものが存在する。このものは、光を発
光する半導体発光素子Aと、凸状の頂部B1を有して発
光した光を収束して光軸B2を中心とする指向角度δを
有した放出光を放出する収束レンズBとを備えている。
2. Description of the Related Art Conventionally, as this kind of light emitting diode,
There is a configuration shown in FIG. This is a semiconductor light emitting element A that emits light, and a convergent lens that has a convex top B1 and converges the emitted light and emits emitted light having a directional angle δ centered on an optical axis B2. B.

【0003】さらに詳しくは、収束レンズBは樹脂から
なり頂部B1が球面状に形成されて、指向角度δを有し
た放出光を放出する。その指向角度δは、換言すると放
出光を用途に応じてどの程度広い照射範囲に亘って放出
するかは、収束レンズBの樹脂の材質を変更することに
よって、又は例えば収束レンズBを白濁させるよう樹脂
に添加物を添加することによって、所定指向角度δ1に
変位する。ただし、このものは凹凸部が収束レンズBの
頂部に設けられていない。
More specifically, the converging lens B is made of resin and has a top portion B1 formed in a spherical shape, and emits emitted light having a directional angle δ. The directivity angle δ is, in other words, how wide the emitted light is to be emitted depending on the application, by changing the material of the resin of the converging lens B or, for example, making the converging lens B cloudy. By adding an additive to the resin, the resin is displaced to a predetermined directivity angle δ1. However, in this case, the uneven portion is not provided on the top of the converging lens B.

【0004】[0004]

【発明が解決しようとする課題】上記した従来の発光ダ
イオードでは、収束レンズBの樹脂材質を変更する、又
は樹脂に添加物を添加することによって、指向角度δを
所定指向角度δ1に変位させて、放出光を用途に応じて
所望の照射範囲に亘って放出できる。
In the above-mentioned conventional light emitting diode, the directional angle δ is changed to a predetermined directional angle δ1 by changing the resin material of the converging lens B or adding an additive to the resin. The emitted light can be emitted over a desired irradiation range depending on the application.

【0005】しかしながら、樹脂材質の変更、又は樹脂
への添加物の添加、つまり収束レンズBの材質変更は多
数の実験、及びその実験に伴う多大の開発期間を必要と
し、所定指向角度δ1を容易に得ることが困難であっ
た。
However, changing the resin material or adding an additive to the resin, that is, changing the material of the converging lens B, requires a large number of experiments and a large development period accompanying the experiments, and the predetermined directivity angle δ1 can be easily adjusted. It was difficult to obtain.

【0006】本発明は、上記事由に鑑みてなしたもの
で、その目的とするところは、指向角度を所定指向角度
に容易に変位させて、所望の照射範囲に亘って放出光を
放出できる発光ダイオードを提供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to easily change a directional angle to a predetermined directional angle to emit light over a desired irradiation range. It is to provide a diode.

【0007】[0007]

【課題を解決するための手段】上記した課題を解決する
ために、請求項1記載のものは、光を発光する半導体発
光素子と、凸状の頂部を有して発光した光を収束して光
軸を中心とする指向角度を有した放出光を放出する収束
レンズと、を備えた発光ダイオードにおいて、前記収束
レンズは、前記放出光を散乱させて前記指向角度を所定
指向角度に変位させる凹凸部が前記頂部に設けられた構
成にしてある。
According to a first aspect of the present invention, there is provided a semiconductor light emitting device which emits light and a light emitting device having a convex top for converging light emitted. A convergent lens that emits emitted light having a directional angle about the optical axis, wherein the convergent lens scatters the emitted light and displaces the directional angle to a predetermined directional angle. The portion is provided on the top.

【0008】請求項2記載のものは、請求項1記載のも
のにおいて、前記収束レンズは金型によって成形された
ものであって、金型は前記頂部の凹凸部にそれぞれ対応
した凸凹部が設けられた構成にしてある。
According to a second aspect of the present invention, in the first aspect, the converging lens is formed by a mold, and the mold is provided with convex and concave portions corresponding to the concave and convex portions on the top. Configuration.

【0009】[0009]

【発明の実施の形態】本発明の一実施形態を図1乃至図
3に基づいて以下に説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIGS.

【0010】1は半導体発光素子で、シリコン基板11
と発光層12とを有して構成され、シリコン基板11が
一面及び他面を有した薄板四角状に形成され、一辺が約
0.3mm、板厚が約0.2mmで、第1導電型のn型
で導電性を有して、強度、及び放熱性に優れる。発光層
12が、第1導電型でn型のGaAlAs層12a、及
び第2導電型でp型のGaAlAs層12bとで構成さ
れ、n型のGaAlAs層12a及びp型のGaAlA
s層12bが、シリコン基板11の一面に順次積層され
て、両層12a,12bの界面で光を発光する。
Reference numeral 1 denotes a semiconductor light emitting element, which is a silicon substrate 11
And a light emitting layer 12. The silicon substrate 11 is formed in a thin rectangular shape having one surface and the other surface, and has a side of about 0.3 mm, a thickness of about 0.2 mm, and a first conductivity type. It has conductivity and is excellent in strength and heat dissipation. The light emitting layer 12 includes an n-type GaAlAs layer 12a of a first conductivity type and a p-type GaAlAs layer 12b of a second conductivity type, and includes an n-type GaAlAs layer 12a and a p-type GaAlA.
The s layer 12b is sequentially laminated on one surface of the silicon substrate 11, and emits light at the interface between the two layers 12a and 12b.

【0011】そして、一方電極13aがシリコン基板1
1の他面に、及び他方電極13bがp型のGaAlAs
層12bのシリコン基板11に対する反対面にそれぞれ
設けられて、一方電極13aが一対のリード端子14の
うち一方リード端子14aに、及び他方電極13bがワ
イヤボンディングされたワイヤ15を介して他方リード
端子14bにそれぞれ接続される。
The one electrode 13a is connected to the silicon substrate 1
1 and the other electrode 13b is p-type GaAlAs
One electrode 13a is provided on the opposite surface to the silicon substrate 11 of the layer 12b, and one electrode 13a is connected to one lead terminal 14a of the pair of lead terminals 14 and the other electrode 13b is connected to the other lead terminal 14b Connected to each other.

【0012】2は収束レンズで、樹脂により、棒状に形
成され、略球状に形成されてた凸状の頂部21が設けら
れ、金型(図示せず)によって成形され、長手方向へ沿
った光軸22を有して、半導体発光素子1から発光した
光を収束するとともに、半導体発光素子1、一対のリー
ド端子14、及びワイヤ15を所定位置に固定する。
Reference numeral 2 denotes a converging lens, which is provided with a convex top 21 formed in a rod shape of resin and formed in a substantially spherical shape, formed by a mold (not shown), and formed along a longitudinal direction. With the shaft 22, the light emitted from the semiconductor light emitting device 1 is converged, and the semiconductor light emitting device 1, the pair of lead terminals 14, and the wire 15 are fixed at predetermined positions.

【0013】ここで、凹部23a及び凸部23bからな
る複数の凹凸部23が、頂部21を切り欠くことによっ
てその頂部21の全表面部に設けられ、放出光を散乱さ
せて、所定指向角度δ1を有した放出光を光軸22を中
心として放出する。ここで、所定指向角度δ1が凹凸部
23を設けていないときの指向角度δから拡大し変位す
る。また金型は、頂部21の凹凸部23における凹部2
3a及び凸部23bにそれぞれ対応した凸凹部が設けら
れて、その凸凹部によって頂部21の凹凸部23を形成
する。
Here, a plurality of concave and convex portions 23 composed of a concave portion 23a and a convex portion 23b are provided on the entire surface of the top portion 21 by cutting off the top portion 21 to scatter emitted light and to provide a predetermined directional angle δ1. Is emitted with the optical axis 22 as the center. Here, the predetermined directional angle δ1 is enlarged and displaced from the directional angle δ when the uneven portion 23 is not provided. Further, the mold is provided with the concave portion 2 in the uneven portion 23 of the top 21.
Protrusions and depressions corresponding to the projections 3a and the projections 23b are provided, and the projections and depressions form the projections and depressions 23 of the top 21.

【0014】このものの動作を説明する。他方電極13
bにプラスの、一方電極13aにマイナスの電圧をそれ
ぞれ印加すると、発光層12はn型のGaAlAs層1
2a及びp型のGaAlAs層12bの界面で光を発光
する。収束レンズ2は凹凸部23が頂部21に設けられ
ているので、光軸22を中心として光を収束すると共に
散乱して、指向角度δに対して拡大変位して所定指向角
度δ1を有した放出光を放出する。すなわち、収束レン
ズは凹凸部が放出光を散乱させ指向角度δを所定指向角
度δ1に拡大変位させて、その拡大変位された放出光が
所望の広い照射範囲に亘って照射される。
The operation of this will be described. Other electrode 13
When a positive voltage is applied to the first electrode 13a and a negative voltage is applied to the one electrode 13a, the light emitting layer 12 becomes the n-type GaAlAs layer 1.
Light is emitted at the interface between the 2a and p-type GaAlAs layers 12b. Since the converging lens 2 has the concavo-convex portion 23 provided on the top portion 21, the light converges and scatters around the optical axis 22 and is displaced by an enlarged displacement with respect to the directional angle δ to have a predetermined directional angle δ1. Emits light. In other words, the converging lens scatters the emitted light in the concavo-convex portion and expands and disperses the directional angle δ to the predetermined directional angle δ1, so that the expanded and displaced emitted light is irradiated over a desired wide irradiation range.

【0015】かかる一実施形態の発光ダイオードにあっ
ては、上記したように、収束レンズ2が凹凸部23を頂
部21に設けたから、収束レンズ2が指向角度δに対し
て変位して所定指向角度δ1を有した放出光を光軸22
を中心に放出して、指向角度δを所定指向角度δ1に容
易に変位できるとともに、放出光を広い照射範囲に亘っ
て照射することができる。
In the light emitting diode of this embodiment, as described above, since the converging lens 2 is provided with the concavo-convex portion 23 on the top 21, the converging lens 2 is displaced with respect to the directivity angle δ and has a predetermined directivity angle. The emitted light having δ1 is
, The directional angle δ can be easily shifted to the predetermined directional angle δ1, and the emitted light can be applied over a wide irradiation range.

【0016】また、頂部21の凹凸部23にそれぞれ対
応した凸凹部が金型に設けられたから、金型を用いて凹
凸部23を収束レンズ2の頂部21に容易に形成できる
とともに、再現性よく大量に製造することができる。
Since the concave and convex portions corresponding to the concave and convex portions 23 of the top portion 21 are provided on the mold, the concave and convex portions 23 can be easily formed on the top portion 21 of the converging lens 2 by using a mold, and the reproducibility is good. Can be manufactured in large quantities.

【0017】なお、本実施形態では、凹凸部23を収束
レンズ2の頂部21の全表面部に設けたが、全表面部で
はなく頂部21の一部に設けて、所定指向角度δ1を所
望の角度に変位させてもよく、すなわち種々の凹凸部2
3を設けて任意の所定指向角度δ1を設定すればよく、
限定されない。
In the present embodiment, the concavo-convex portion 23 is provided on the entire surface of the top portion 21 of the converging lens 2, but is provided not on the entire surface portion but on a part of the top portion 21 so that the predetermined directivity angle δ1 is a desired value. May be displaced at an angle, ie, various irregularities 2
3 to set an arbitrary predetermined directional angle δ1,
Not limited.

【0018】また、本実施形態では、第1導電型をn
型、及び第2導電型をp型として半導体発光素子1を形
成したが、第1導電型をp型、及び第2導電型をn型と
してもよく、限定されない。
In the present embodiment, the first conductivity type is n.
Although the semiconductor light emitting device 1 is formed with the mold and the second conductivity type being p-type, the first conductivity type may be p-type and the second conductivity type may be n-type, and there is no limitation.

【0019】[0019]

【発明の効果】請求項1記載のものは、収束レンズが凹
凸部を頂部に設けたから、収束レンズが指向角度に対し
て変位して所定指向角度を有した放出光を光軸を中心に
放出して、指向角度を所定指向角度に容易に変位できる
とともに、放出光を広い照射範囲に亘って照射すること
ができる。
According to the first aspect of the present invention, since the converging lens has the concavo-convex portion on the top, the converging lens is displaced with respect to the directional angle and emits light having a predetermined directional angle about the optical axis. Thus, the directional angle can be easily changed to a predetermined directional angle, and the emitted light can be applied over a wide irradiation range.

【0020】請求項2記載のものは、請求項1記載のも
のの効果に加えて、収束レンズが金型によって成形され
たものであれば、頂部の凹凸部にそれぞれ対応した凸凹
部が金型に設けられたから、金型を用いて凹凸部を収束
レンズの頂部に容易に形成できるとともに、再現性よく
大量に製造することができる。
According to the second aspect, in addition to the effects of the first aspect, if the converging lens is formed by a mold, the concave and convex portions corresponding to the concave and convex portions on the top are formed on the mold. Since it is provided, the concave and convex portions can be easily formed on the top of the converging lens by using a mold, and can be mass-produced with good reproducibility.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施形態を示す一部破断正面図であ
る。
FIG. 1 is a partially cutaway front view showing an embodiment of the present invention.

【図2】同上の正面図である。FIG. 2 is a front view of the same.

【図3】同上の平面図である。FIG. 3 is a plan view of the same.

【図4】従来例を示す一部破断正面図である。FIG. 4 is a partially cutaway front view showing a conventional example.

【符号の説明】[Explanation of symbols]

1 半導体発光素子 2 収束レンズ 21 頂部 22 光軸 23 凹凸部 δ 指向角度 δ1 所定指向角度 DESCRIPTION OF SYMBOLS 1 Semiconductor light emitting element 2 Convergent lens 21 Top 22 Optical axis 23 Uneven part δ Direction angle δ1 Predetermined directivity angle

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 光を発光する半導体発光素子と、凸状の
頂部を有して発光した光を収束して光軸を中心とする指
向角度を有した放出光を放出する収束レンズと、を備え
た発光ダイオードにおいて、 前記収束レンズは、前記放出光を散乱させて前記指向角
度を所定指向角度に変位させる凹凸部が前記頂部に設け
られたことを特徴とする発光ダイオード。
1. A semiconductor light emitting device that emits light, and a convergent lens that has a convex top and converges the emitted light and emits emitted light having a directional angle about the optical axis. The light emitting diode according to claim 1, wherein the converging lens is provided on the top with a concave / convex portion for scattering the emitted light and displacing the directional angle to a predetermined directional angle.
【請求項2】 前記収束レンズは金型によって成形され
たものであって、金型は前記頂部の凹凸部にそれぞれ対
応した凸凹部が設けられたことを特徴とする請求項1記
載の発光ダイオード。
2. The light-emitting diode according to claim 1, wherein the converging lens is formed by a mold, and the mold is provided with concave and convex portions corresponding to the concave and convex portions on the top portion, respectively. .
JP11854698A 1998-04-28 1998-04-28 Light emitting diode Withdrawn JPH11312827A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11854698A JPH11312827A (en) 1998-04-28 1998-04-28 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11854698A JPH11312827A (en) 1998-04-28 1998-04-28 Light emitting diode

Publications (1)

Publication Number Publication Date
JPH11312827A true JPH11312827A (en) 1999-11-09

Family

ID=14739273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11854698A Withdrawn JPH11312827A (en) 1998-04-28 1998-04-28 Light emitting diode

Country Status (1)

Country Link
JP (1) JPH11312827A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100666190B1 (en) * 2005-06-30 2007-01-09 서울반도체 주식회사 Light emitting diode
JP2007005749A (en) * 2005-06-24 2007-01-11 Epitech Technology Corp Light emitting diode
JP2007227926A (en) * 2006-02-21 2007-09-06 Samsung Electro-Mechanics Co Ltd Manufacturing method of light emitting diode package
CN100411171C (en) * 2005-09-30 2008-08-13 中国科学院长春光学精密机械与物理研究所 A three-color LED pixel module
JP2008243959A (en) * 2007-03-26 2008-10-09 Matsushita Electric Works Ltd Light emitting device
JP2008543100A (en) * 2005-06-07 2008-11-27 ジーメンス ヴィディーオー オートモーティヴ アクチエンゲゼルシャフト Light emitting device
KR101301206B1 (en) * 2013-05-01 2013-08-29 정해운 An optical lens
JP2014082404A (en) * 2012-10-18 2014-05-08 Citizen Electronics Co Ltd Light-emitting device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008543100A (en) * 2005-06-07 2008-11-27 ジーメンス ヴィディーオー オートモーティヴ アクチエンゲゼルシャフト Light emitting device
US8283685B2 (en) 2005-06-07 2012-10-09 Siemens Vdo Automotive Ag Light-generating arrangement
JP2007005749A (en) * 2005-06-24 2007-01-11 Epitech Technology Corp Light emitting diode
KR100666190B1 (en) * 2005-06-30 2007-01-09 서울반도체 주식회사 Light emitting diode
CN100411171C (en) * 2005-09-30 2008-08-13 中国科学院长春光学精密机械与物理研究所 A three-color LED pixel module
JP2007227926A (en) * 2006-02-21 2007-09-06 Samsung Electro-Mechanics Co Ltd Manufacturing method of light emitting diode package
JP2008243959A (en) * 2007-03-26 2008-10-09 Matsushita Electric Works Ltd Light emitting device
JP2014082404A (en) * 2012-10-18 2014-05-08 Citizen Electronics Co Ltd Light-emitting device
KR101301206B1 (en) * 2013-05-01 2013-08-29 정해운 An optical lens

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