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JPH11288975A5 - - Google Patents

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Publication number
JPH11288975A5
JPH11288975A5 JP1998091311A JP9131198A JPH11288975A5 JP H11288975 A5 JPH11288975 A5 JP H11288975A5 JP 1998091311 A JP1998091311 A JP 1998091311A JP 9131198 A JP9131198 A JP 9131198A JP H11288975 A5 JPH11288975 A5 JP H11288975A5
Authority
JP
Japan
Prior art keywords
substrate
bonding
metal bumps
electrodes
bare chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998091311A
Other languages
Japanese (ja)
Other versions
JPH11288975A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP10091311A priority Critical patent/JPH11288975A/en
Priority claimed from JP10091311A external-priority patent/JPH11288975A/en
Publication of JPH11288975A publication Critical patent/JPH11288975A/en
Publication of JPH11288975A5 publication Critical patent/JPH11288975A5/ja
Pending legal-status Critical Current

Links

Description

【0016】
【課題を解決するための手段】
請求項1の発明による解決手段は、先端が尖っている金属バンプが形成されたべアチップを前記金属バンプを介して基板の電極に接続するボンディング方法において、
前記金属バンプが接続される前記基板の電極を含む前記基板のべアチップ搭載領域に封止樹脂を塗布する塗布工程と、
前記塗布工程後に前記金属バンプを超音波を印加しながら前記基板の電極に熱圧着する熱圧着工程とを具備することを特徴とするボンディング方法にある。
[0016]
[Means for solving the problem]
The solution according to the invention of claim 1 is a bonding method for connecting a bare chip having pointed metal bumps to electrodes on a substrate via the metal bumps, comprising the steps of:
a coating step of coating a sealing resin on a bare chip mounting area of the substrate including electrodes of the substrate to which the metal bumps are connected;
The bonding method is characterized by comprising, after the application step, a thermocompression bonding step of thermocompression bonding the metal bumps to the electrodes of the substrate while applying ultrasonic waves.

請求項2の発明による解決手段は、前記超音波の印加は、前記金属バンプの前記基放の電極への接触時点以降又は前記接触時点より前から開始することを特徴とする請求項1記載のボンディング方法にある。 The solution provided by the invention of claim 2 resides in the bonding method described in claim 1, characterized in that the application of the ultrasonic waves begins after or before the metal bump comes into contact with the substrate electrode.

請求項3の発明による解決手段は、前記封止樹脂は熱硬化型樹脂であり、熱圧着工程後に前記基板とベアチップとの間に介在している封止樹脂を硬化させる加熱工程を具備することを特徴とする請求項1記載のボンディング方法にある。 The solution provided by the invention of claim 3 is the bonding method described in claim 1, characterized in that the sealing resin is a thermosetting resin and includes a heating step for hardening the sealing resin interposed between the substrate and the bare chip after the thermocompression bonding step.

請求項4の発明による解決手段は、金属バンプが形成されたべアチップを前記金属バンプを介して基板の電極に接続するボンディング装置において、
前記基板のべアチッフ°搭載領域に封止樹脂を塗布する塗布機構と、前記ベアチップを保持するボンディングツールと、前記ボンディングツールを介して前記ベアチップを前記基板に対して加圧する加圧機構と、前記金属バンプの前記電極への接触部位に、前記金属バンプの前記基板の電極への接触時点以降又は前記接触時点より前から超音波を印加する超音波印加機構とを具備することを特徴とするボンディング装置にある。
The solution according to the invention of claim 4 is a bonding apparatus for connecting a bare chip having metal bumps formed thereon to electrodes of a substrate via the metal bumps, comprising:
The bonding device is characterized by comprising an application mechanism that applies sealing resin to the bare chip mounting area of the substrate, a bonding tool that holds the bare chip, a pressure mechanism that presses the bare chip against the substrate via the bonding tool, and an ultrasonic application mechanism that applies ultrasonic waves to the contact points of the metal bumps with the electrodes of the substrate after or before the metal bumps come into contact with the electrodes of the substrate.

請求項5の発明による解決手段は、前記基板は、ボンディングステージに保持され、このボンディングステージには前記基板を加熱する加熱手段が設けられていることを特徴とする請求項4記載のボンディング装置にある。 The solution provided by the invention of claim 5 resides in the bonding apparatus described in claim 4, characterized in that the substrate is held on a bonding stage, and this bonding stage is provided with heating means for heating the substrate.

Claims (5)

先端が尖っている金属バンプが形成されたべアチップを前記金属バンプを介して基板の電極に接続するボンディング方法において、
前記金属バンプが接続される前記基板の電極を含む前記基板のべアチップ搭載領域に封止樹脂を塗布する塗布工程と、
前記塗布工程後に前記金属バンプを超音波を印加しながら前記基板の電極に熱圧着する熱圧着工程とを具備することを特徴とするボンディング方法。
A bonding method for connecting a bare chip having pointed metal bumps to electrodes on a substrate via the metal bumps, comprising:
a coating step of coating a sealing resin on a bare chip mounting area of the substrate including electrodes of the substrate to which the metal bumps are connected;
a thermocompression bonding step of thermocompressing the metal bumps to the electrodes of the substrate while applying ultrasonic waves after the coating step;
前記超音波の印加は、前記金属バンプの前記基放の電極への接触時点以降又は前記接触時点より前から開始することを特徴とする請求項1記載のボンディング方法。2. The bonding method according to claim 1, wherein the application of the ultrasonic waves is started after or before the metal bump comes into contact with the substrate electrode. 前記封止樹脂は熱硬化型樹脂であり、熱圧着工程後に前記基板とベアチップとの間に介在している封止樹脂を硬化させる加熱工程を具備することを特徴とする請求項1記載のボンディング方法。2. The bonding method according to claim 1, wherein the sealing resin is a thermosetting resin, and further comprising a heating step for hardening the sealing resin interposed between the substrate and the bare chip after the thermocompression bonding step. 金属バンプが形成されたべアチップを前記金属バンプを介して基板の電極に接続するボンディング装置において、
前記基板のべアチッフ°搭載領域に封止樹脂を塗布する塗布機構と、前記ベアチップを保持するボンディングツールと、前記ボンディングツールを介して前記ベアチップを前記基板に対して加圧する加圧機構と、前記金属バンプの前記電極への接触部位に、前記金属バンプの前記基板の電極への接触時点以降又は前記接触時点より前から超音波を印加する超音波印加機構とを具備することを特徴とするボンディング装置。
A bonding apparatus for connecting bare chips having metal bumps formed thereon to electrodes on a substrate via the metal bumps,
A bonding device comprising: an application mechanism that applies sealing resin to the bare chip mounting area of the substrate; a bonding tool that holds the bare chip; a pressure mechanism that presses the bare chip against the substrate via the bonding tool; and an ultrasonic application mechanism that applies ultrasonic waves to the contact points of the metal bumps with the electrodes of the substrate after or before the metal bumps come into contact with the electrodes of the substrate.
前記基板は、ボンディングステージに保持され、このボンディングステージには前記基板を加熱する加熱手段が設けられていることを特徴とする請求項4記載のボンディング装置。5. A bonding apparatus according to claim 4, wherein the substrate is held on a bonding stage, and the bonding stage is provided with a heating means for heating the substrate.
JP10091311A 1998-04-03 1998-04-03 Bonding method and bonding apparatus Pending JPH11288975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10091311A JPH11288975A (en) 1998-04-03 1998-04-03 Bonding method and bonding apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10091311A JPH11288975A (en) 1998-04-03 1998-04-03 Bonding method and bonding apparatus

Publications (2)

Publication Number Publication Date
JPH11288975A JPH11288975A (en) 1999-10-19
JPH11288975A5 true JPH11288975A5 (en) 2005-09-15

Family

ID=14022934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10091311A Pending JPH11288975A (en) 1998-04-03 1998-04-03 Bonding method and bonding apparatus

Country Status (1)

Country Link
JP (1) JPH11288975A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000068327A (en) * 1998-08-20 2000-03-03 Matsushita Electric Ind Co Ltd Component mounting method and equipment
JP3830125B2 (en) * 2000-03-14 2006-10-04 株式会社東芝 Semiconductor device manufacturing method and semiconductor device
JP4585196B2 (en) * 2003-12-16 2010-11-24 富士通セミコンダクター株式会社 Electronic component bonding method and apparatus
JP4260721B2 (en) 2004-10-29 2009-04-30 富士通株式会社 Electronic component board mounting method and board mounting apparatus
JP4733441B2 (en) * 2005-06-27 2011-07-27 アスリートFa株式会社 Electronic component joining equipment

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