JPH11229120A - Method for forming transparent electro conductive thin film - Google Patents
Method for forming transparent electro conductive thin filmInfo
- Publication number
- JPH11229120A JPH11229120A JP4444298A JP4444298A JPH11229120A JP H11229120 A JPH11229120 A JP H11229120A JP 4444298 A JP4444298 A JP 4444298A JP 4444298 A JP4444298 A JP 4444298A JP H11229120 A JPH11229120 A JP H11229120A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- laser beam
- conductor
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims description 49
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 230000001678 irradiating effect Effects 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 abstract description 20
- 229920003023 plastic Polymers 0.000 abstract description 8
- 239000004033 plastic Substances 0.000 abstract description 8
- 230000003287 optical effect Effects 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 5
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 5
- 239000010453 quartz Substances 0.000 abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 230000000704 physical effect Effects 0.000 abstract description 3
- 238000005086 pumping Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 238000009834 vaporization Methods 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 description 9
- 229910003437 indium oxide Inorganic materials 0.000 description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 229910001887 tin oxide Inorganic materials 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000007733 ion plating Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GENZLHCFIPDZNJ-UHFFFAOYSA-N [In+3].[O-2].[Mg+2] Chemical compound [In+3].[O-2].[Mg+2] GENZLHCFIPDZNJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Lasers (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、プラスチック基
板、ガラス基板、半導体基板などの基板上に、蒸着法に
より透明導電性薄膜を形成させる方法の改良に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a method for forming a transparent conductive thin film on a substrate such as a plastic substrate, a glass substrate, and a semiconductor substrate by a vapor deposition method.
【０００２】[0002]
【従来の技術】従来、透明導電性薄膜は、例えば帯電防
止膜、熱線反射膜、面発熱体、光電交換素子、透明電極
などとして利用されており、特にインジウムチンオキシ
ド（ＩＴＯ）で代表される酸化物半導体からなる透明導
電性薄膜は、各種電子部品の材料として重要である。2. Description of the Related Art Conventionally, a transparent conductive thin film has been used as, for example, an antistatic film, a heat ray reflective film, a surface heating element, a photoelectric exchange element, a transparent electrode, and the like, and particularly represented by indium tin oxide (ITO). A transparent conductive thin film made of an oxide semiconductor is important as a material for various electronic components.
【０００３】この酸化物半導体からなる透明導電性薄膜
は、一般的には、真空蒸着法、スパッタリング法、イオ
ンプレーティング法、電子ビーム蒸着法などのＰＶＤ法
（物理的気相蒸着法）、ＣＶＤ法（化学的気相蒸着
法）、あるいはスプレー法などの蒸着法によって、基板
上に形成される。[0003] In general, a transparent conductive thin film made of this oxide semiconductor is formed by a PVD method (physical vapor deposition method) such as a vacuum evaporation method, a sputtering method, an ion plating method, or an electron beam evaporation method, or a CVD method. It is formed on a substrate by an evaporation method such as a chemical vapor deposition method or a spray method.
【０００４】しかしながら、これらの方法においては、
蒸着に際し、基板を、通常４００℃以上に加熱する必要
があるため、基板材料としては、４００℃以上の温度で
安定なものを用いなければならず、例えば変形温度が４
００℃よりも低いプラスチック基板は用いることができ
ないという欠点があった。However, in these methods,
During the vapor deposition, the substrate is usually required to be heated to 400 ° C. or higher. Therefore, a substrate material that is stable at a temperature of 400 ° C. or higher must be used.
There is a disadvantage that a plastic substrate lower than 00 ° C. cannot be used.
【０００５】[0005]
【発明が解決しようとする課題】本発明は、蒸着の際
に、基板を加熱する必要がなく、したがって、これまで
変形、軟化などのトラブルを伴うために使用することが
できなかったプラスチックのような基板に対しても適用
しうる、新規な蒸着法による透明導電性薄膜の形成方法
を提供することを目的としてなされたものである。SUMMARY OF THE INVENTION The present invention does not require the substrate to be heated at the time of vapor deposition, and therefore, is not applicable to plastics which have heretofore been unable to be used because of problems such as deformation and softening. An object of the present invention is to provide a method for forming a transparent conductive thin film by a novel vapor deposition method, which can be applied to a simple substrate.
【０００６】[0006]
【課題を解決するための手段】本発明者らは、蒸着法に
よる透明導電性薄膜の形成方法について鋭意研究を重ね
た結果、基板上に酸化物半導体を蒸着法により成長させ
る際に、該基板に紫外光レーザを照射することにより、
薄膜成長過程における最表面層のみの光励起によって、
微細構造が安定化するため、基板温度が低くても電気抵
抗率及び可視光透過率を同時に改善させうることを見出
し、この知見に基づいて本発明を完成するに至った。Means for Solving the Problems The present inventors have conducted intensive studies on a method of forming a transparent conductive thin film by a vapor deposition method. As a result, when growing an oxide semiconductor on a substrate by the vapor deposition method, By irradiating the ultraviolet laser to the
By photoexcitation of only the outermost layer during the thin film growth process,
The present inventors have found that since the microstructure is stabilized, it is possible to simultaneously improve the electrical resistivity and the visible light transmittance even if the substrate temperature is low, and have completed the present invention based on this finding.
【０００７】すなわち、本発明は、非加熱状態の基板上
に、紫外光レーザを照射しながら酸化物半導体を蒸着さ
せることを特徴とする透明導電性薄膜の形成方法を提供
するものである。That is, the present invention provides a method for forming a transparent conductive thin film, which comprises depositing an oxide semiconductor on a non-heated substrate while irradiating an ultraviolet laser.
【０００８】[0008]
【発明の実施の形態】本発明方法において用いられる基
板としては特に制限はなく、従来、蒸着法による酸化物
半導体薄膜の形成に慣用されている基板、例えばパイレ
ックスガラスや石英ガラスなどのガラス基板、シリコン
やＧａＡｓなどの半導体基板はもちろん、これまでの蒸
着法では基板温度を高くしなければならないために使用
することができなかったプラスチック基板のような耐熱
性に劣る基板も用いることができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS The substrate used in the method of the present invention is not particularly limited, and a substrate conventionally used for forming an oxide semiconductor thin film by a vapor deposition method, for example, a glass substrate such as Pyrex glass or quartz glass, In addition to a semiconductor substrate such as silicon or GaAs, a substrate having poor heat resistance, such as a plastic substrate, which cannot be used because a substrate temperature has to be increased by a conventional vapor deposition method, can be used.
【０００９】また、本発明方法における酸化物半導体と
しては、これまで蒸着法により基板上に透明導電性薄膜
を形成する際に用いられていたものの中から任意に選ん
で用いることができ、特に制限はない。このような酸化
物半導体としては、例えば酸化インジウム、酸化スズ、
酸化亜鉛、酸化ガリウム、あるいはこれらの複合酸化物
系や、インジウム酸マグネシウム系などが挙げられる。
上記複合酸化物系半導体としては、インジウムチンオキ
シド（ＩＴＯ）が代表的なものとして知られている。The oxide semiconductor used in the method of the present invention can be arbitrarily selected from those used in forming a transparent conductive thin film on a substrate by a vapor deposition method. There is no. Examples of such an oxide semiconductor include indium oxide, tin oxide,
Examples thereof include zinc oxide, gallium oxide, composite oxides thereof, and magnesium indium oxide.
As the composite oxide semiconductor, indium tin oxide (ITO) is known as a typical example.
【００１０】次に、本発明方法で用いる蒸着法の種類に
ついても特に制限はなく、真空蒸着法、スパッタリング
法、イオンプレーティング法、高周波イオンプレーティ
ング法、電子ビーム蒸着法、化学的気相蒸着法（ＣＶＤ
法）など、従来透明導電性薄膜の形成に用いられていた
方法のいずれを用いてもよい。Next, there is no particular limitation on the type of the vapor deposition method used in the method of the present invention. Vacuum vapor deposition, sputtering, ion plating, high-frequency ion plating, electron beam vapor deposition, chemical vapor deposition, etc. Method (CVD
Or any of the methods conventionally used for forming a transparent conductive thin film.
【００１１】本発明方法においては、基板に紫外光レー
ザを照射させながら、蒸着処理すること、すなわち成長
中の酸化物半導体に紫外光レーザを照射させながら、酸
化物半導体を蒸着させることが必要である。この際照射
する紫外光レーザとしては、例えばＡｒＦ、ＫｒＦ、Ｘ
ｅＦ、ＸｅＣｌなどのエキシマレーザ光やＹＡＧレーザ
光の高調波などが用いられる。In the method of the present invention, it is necessary to perform the vapor deposition while irradiating the substrate with an ultraviolet laser, that is, to deposit the oxide semiconductor while irradiating the growing oxide semiconductor with the ultraviolet laser. is there. At this time, for example, ArF, KrF, X
Excimer laser light such as eF or XeCl, or harmonics of YAG laser light are used.
【００１２】本発明方法で用いる紫外光レーザの平均エ
ネルギー密度は、対象材料である酸化物半導体の結晶化
温度などの諸物性に左右される。例えば、酸化物半導体
として、酸化インジウム−５重量％酸化スズの複合酸化
物系を使用し、その電気伝導率及び可視光透過率を最適
化するには、１ｍＷ／ｃｍ2以上のレーザ出力が必要で
ある。この紫外光レーザは、通常、レーザ発振器からの
光を、アッテネーターやレンズなどでレーザ出力を調整
して使用される。The average energy density of the ultraviolet laser used in the method of the present invention depends on various physical properties such as the crystallization temperature of the target oxide semiconductor. For example, a laser output of 1 mW / cm 2 or more is required to use an indium oxide-5 wt% tin oxide composite oxide system as an oxide semiconductor and optimize its electrical conductivity and visible light transmittance. It is. This ultraviolet laser is generally used by adjusting the laser output of light from a laser oscillator using an attenuator, a lens, or the like.
【００１３】本発明方法においては、従来方法のように
蒸着処理に際し、基板を加熱する必要はなく、周囲温度
例えば室温において行うことができる。また、周囲環境
によっては、室温以上の温度に上昇する場合、例えば５
０〜１００℃の周囲温度になる場合もあるが、もちろん
その場合でも特に冷却することなく、非加熱状態のまま
で蒸着を行うことができる。In the method of the present invention, it is not necessary to heat the substrate during the deposition process as in the conventional method, and the deposition can be performed at an ambient temperature, for example, room temperature. Further, depending on the surrounding environment, when the temperature rises to room temperature or higher, for example, 5
Although the ambient temperature may be 0 to 100 ° C., it is needless to say that even in such a case, vapor deposition can be performed without cooling and in a non-heated state.
【００１４】このように、本発明方法は、基板を加熱し
ないこと及び紫外光レーザを照射することのみが従来方
法と異なっているだけで、それ以外の蒸着条件はすべて
従来の方法と同じであり、特に変更する必要はない。As described above, the method of the present invention is different from the conventional method only in that the substrate is not heated and the irradiation of the ultraviolet laser is performed, and all other vapor deposition conditions are the same as the conventional method. Need not be changed.
【００１５】このようにして、従来方法によれば、基板
温度を４００℃以上に加熱しなければ得ることができな
かった、電気抵抗率３×１０-4Ω・ｃｍ以下、可視光透
過率９０％以上の酸化物半導体薄膜を室温において形成
させることができる。As described above, according to the conventional method, an electric resistivity of 3 × 10 −4 Ω · cm or less and a visible light transmittance of 90 ° C. cannot be obtained unless the substrate temperature is heated to 400 ° C. or more. % Or more of the oxide semiconductor thin film can be formed at room temperature.
【００１６】次に、添付図面に従って本発明方法を説明
する。図１は、本発明方法を実施するために用いられる
蒸着装置の１例の説明図であって、内部を真空に保持す
るための真空ポンプ１１に連結した排気バルブ２を有す
る真空容器１内には、蒸着材料を電子ビーム蒸着又はス
パッタリングするための蒸発源５、基板８近傍に酸素ガ
ス導入管３が設置されている。また、レーザ発振器９か
ら基板８に照射する紫外光レーザビーム６のレーザ出力
を調整するための光学系７及び真空容器１内に紫外光レ
ーザビーム６を導入するための石英窓４が設けられてい
る。上記の蒸発源５は電子銃蒸着装置電源１２及び制御
盤１３により制御されている。Next, the method of the present invention will be described with reference to the accompanying drawings. FIG. 1 is an explanatory view of an example of a vapor deposition apparatus used for carrying out the method of the present invention. In FIG. 1, a vacuum vessel 1 having an exhaust valve 2 connected to a vacuum pump 11 for keeping the inside vacuum is provided. Is provided with an evaporation source 5 for electron beam evaporation or sputtering of a deposition material, and an oxygen gas introduction pipe 3 near the substrate 8. Further, an optical system 7 for adjusting the laser output of the ultraviolet laser beam 6 applied to the substrate 8 from the laser oscillator 9 and a quartz window 4 for introducing the ultraviolet laser beam 6 into the vacuum vessel 1 are provided. I have. The above-mentioned evaporation source 5 is controlled by a power supply 12 for an electron gun evaporation apparatus and a control panel 13.
【００１７】まず、真空容器１内に基板８を装着したの
ち、排気バルブ２を開放し、真空ポンプ１１によって容
器内の真空度を１０-5〜１０-7Ｔｏｒｒ程度になるまで
排気後、酸素ガス導入管３から、酸素雰囲気圧が１０-2
〜１０-4Ｔｏｒｒ程度になるように酸素ガスを導入す
る。次いで、紫外光レーザビーム６を光学系７及び石英
窓４を通して、試料ホルダー１０に支持された基板８に
照射させながら、蒸発源５により、酸化物半導体を基板
８上に蒸着させる。この際、基板８は加熱しなくてもよ
いが、所望により、基板に影響を与えない程度に加熱し
てもよい。基板としてプラスチック基板を用いた場合に
は、基板温度は１００℃以下が好ましい。蒸着時間は特
に制限はなく、形成される透明導電性薄膜の所望膜厚に
応じて、適宜選定すればよい。First, after mounting the substrate 8 in the vacuum container 1, the exhaust valve 2 is opened, and the vacuum pump 11 exhausts the vacuum in the container until it reaches about 10 -5 to 10 -7 Torr. Oxygen atmosphere pressure is 10 -2 from gas inlet pipe 3
Oxygen gas is introduced so as to be about 10 -4 Torr. Next, the oxide semiconductor is deposited on the substrate 8 by the evaporation source 5 while irradiating the substrate 8 supported by the sample holder 10 with the ultraviolet laser beam 6 through the optical system 7 and the quartz window 4. At this time, the substrate 8 need not be heated, but may be heated to such an extent that the substrate 8 is not affected, if desired. When a plastic substrate is used as the substrate, the substrate temperature is preferably 100 ° C. or lower. The deposition time is not particularly limited, and may be appropriately selected depending on the desired thickness of the formed transparent conductive thin film.
【００１８】このようにして、電気抵抗率が３×１０-4
Ω・ｃｍ以下で、かつ可視光透過率が９０％以上の優れ
た透明導電性を有する酸化物半導体薄膜が形成される。
この酸化物半導体薄膜の厚さは、用途に応じて異なる
が、通常０．０１〜１０μｍ程度である。Thus, the electric resistivity is 3 × 10 -4
An oxide semiconductor thin film having excellent transparent conductivity of Ω · cm or less and a visible light transmittance of 90% or more is formed.
The thickness of the oxide semiconductor thin film varies depending on the application, but is usually about 0.01 to 10 μm.
【００１９】[0019]
【発明の効果】本発明方法によれば、非加熱状態の基板
に紫外光レーザを照射しながら、酸化物半導体を蒸着さ
せることにより、効率よく透明導電性に優れる酸化物半
導体薄膜を基板上に形成させることができる。したがっ
て、従来の蒸着法では使用できなかったプラスチック基
板などの耐熱性に劣る基板も、本発明方法では用いるこ
とができる。本発明方法で得られた酸化物半導体からな
る透明導電性薄膜は、例えば帯電防止膜、熱線反射膜、
面発熱体、光電変換素子、透明電極などとして有用であ
る。According to the method of the present invention, an oxide semiconductor is vapor-deposited while irradiating the substrate in an unheated state with an ultraviolet laser, whereby an oxide semiconductor thin film having excellent transparent conductivity is efficiently formed on the substrate. Can be formed. Therefore, a substrate having poor heat resistance, such as a plastic substrate, which cannot be used in the conventional vapor deposition method, can also be used in the method of the present invention. The transparent conductive thin film made of an oxide semiconductor obtained by the method of the present invention is, for example, an antistatic film, a heat ray reflective film,
It is useful as a surface heating element, a photoelectric conversion element, a transparent electrode, and the like.
【００２０】[0020]
【実施例】次に、本発明を実施例により、さらに詳細に
説明するが、本発明は、この例によってなんら限定され
るものではない。Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.
【００２１】実施例 図１に示す装置を用い、下記のように実施した。まず、
真空容器１内に、パイレックスガラス基板８を所定位置
に設置して、排気バルブ２を開放し、容器内の真空度が
５×１０-6Ｔｏｒｒ程度になるまで真空ポンプ１１で排
気したのち、酸素ガス導入管（ステンレス鋼管）３か
ら、酸素雰囲気圧が２×１０-3Ｔｏｒｒになるように、
酸素ガスを導入した。次いで、電子ビーム蒸発源５によ
り、酸化物半導体である酸化インジウム−５重量％酸化
スズタブレットを蒸発させ、基板８上に酸化物半導体を
蒸着させた。この際の成膜速度は１〜２Å／秒とした。
この蒸着と同時に、成膜中の基板８に、ＫｒＦエキシマ
レーザビーム６を光学系７及び石英窓４を通して、平均
レーザ出力を変化させ、繰り返し数４０Ｈｚで照射し、
膜厚０．２μｍの薄膜を形成させた。なお、基板の温度
は室温とした。EXAMPLE The apparatus shown in FIG. 1 was used as follows. First,
The Pyrex glass substrate 8 is set in a predetermined position in the vacuum vessel 1, the exhaust valve 2 is opened, and the vessel is evacuated by the vacuum pump 11 until the degree of vacuum in the vessel becomes about 5 × 10 −6 Torr. From the gas introduction pipe (stainless steel pipe) 3, the oxygen atmosphere pressure is set to 2 × 10 −3 Torr,
Oxygen gas was introduced. Next, an indium oxide-5 wt% tin oxide tablet as an oxide semiconductor was evaporated by the electron beam evaporation source 5 to deposit the oxide semiconductor on the substrate 8. At this time, the film forming speed was set to 1 to 2 ° / sec.
Simultaneously with this vapor deposition, the KrF excimer laser beam 6 is irradiated on the substrate 8 under film formation through the optical system 7 and the quartz window 4 at a repetition rate of 40 Hz while changing the average laser output.
A thin film having a thickness of 0.2 μm was formed. The temperature of the substrate was room temperature.
【００２２】このようにして、室温基板上に形成された
酸化インジウム・酸化スズ薄膜における平均レーザ出力
と電気抵抗率（Ａ）、電子移動度（Ｂ）、電子密度
（Ｃ）との関係を図２でグラフに示す。レーザ出力が１
ｍＷ／ｃｍ2において、透明導電薄膜の電気抵抗率とし
て、通常４００℃で達成される値、すなわち電気抵抗率
３×１０-4Ω・ｃｍ以下が得られた。The relationship between the average laser output, the electrical resistivity (A), the electron mobility (B), and the electron density (C) in the indium oxide / tin oxide thin film formed on the substrate at room temperature as described above is shown. This is shown in the graph at 2. Laser output is 1
At mW / cm 2 , the electrical resistivity of the transparent conductive thin film was a value normally achieved at 400 ° C., that is, an electrical resistivity of 3 × 10 −4 Ω · cm or less.
【００２３】このレーザ出力１ｍＷ／ｃｍ2において、
室温基板上に形成された透明導電性薄膜における波長と
光透過率との関係を図３にグラフで示す。平均可視光透
過率は、通常４００℃で達成される値、すなわち９０％
以上の値が室温において得られた。この薄膜のＸ線回折
チャートを図４に示す。図中の＊印のピークは酸化イン
ジウム結晶に基づくものである。この図から結晶性のよ
い酸化インジウム結晶が室温基板上に形成されているこ
とが分かる。At this laser output of 1 mW / cm 2 ,
FIG. 3 is a graph showing the relationship between the wavelength and the light transmittance of the transparent conductive thin film formed on the substrate at room temperature. The average visible light transmission is the value usually achieved at 400 ° C., ie 90%
The above values were obtained at room temperature. FIG. 4 shows an X-ray diffraction chart of this thin film. The peak marked * in the figure is based on the indium oxide crystal. From this figure, it can be seen that an indium oxide crystal having good crystallinity was formed on the substrate at room temperature.
【図１】 本発明方法の説明図。FIG. 1 is an explanatory diagram of the method of the present invention.
【図２】 本発明方法で得られた透明導電性薄膜の１例
の電気的特性を示すグラフ。FIG. 2 is a graph showing electrical characteristics of one example of a transparent conductive thin film obtained by the method of the present invention.
【図３】 本発明方法で得られた透明導電性薄膜の１例
の波長と光透過率との関係を示すグラフ。FIG. 3 is a graph showing the relationship between wavelength and light transmittance of one example of a transparent conductive thin film obtained by the method of the present invention.
【図４】 本発明方法で得られた透明導電性薄膜の１例
のＸ線回折チャート。FIG. 4 is an X-ray diffraction chart of one example of a transparent conductive thin film obtained by the method of the present invention.
１ 真空容器 ２ 排気バルブ ３ 酸素ガス導入管 ４ 石英窓 ５ 蒸発源 ６ 紫外光レーザビーム ７ レーザ出力調整用光学系 ８ 基板 ９ レーザ発振器 １０ 試料ホルダー １１ 真空ポンプ １２ 電源 １３ 制御盤 DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Exhaust valve 3 Oxygen gas introduction pipe 4 Quartz window 5 Evaporation source 6 Ultraviolet laser beam 7 Laser output adjustment optical system 8 Substrate 9 Laser oscillator 10 Sample holder 11 Vacuum pump 12 Power supply 13 Control panel
─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成１１年１月８日[Submission date] January 8, 1999
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１２[Correction target item name] 0012
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００１２】本発明方法で用いる紫外光レーザの平均エ
ネルギー密度は、対象材料である酸化物半導体の結晶化
温度などの諸物性に左右される。例えば、酸化物半導体
として、酸化インジウム−５重量％酸化スズの複合酸化
物系を使用し、その電気伝導率及び可視光透過率を最適
化するには、１Ｗ／ｃｍ2以上のレーザ出力が必要であ
る。この紫外光レーザは、通常、レーザ発振器からの光
を、アッテネーターやレンズなどでレーザ出力を調整し
て使用される。The average energy density of the ultraviolet laser used in the method of the present invention depends on various physical properties such as the crystallization temperature of the target oxide semiconductor. For example, a composite oxide system of indium oxide-5% by weight tin oxide is used as an oxide semiconductor, and a laser output of 1 W / cm 2 or more is required to optimize its electric conductivity and visible light transmittance. It is. This ultraviolet laser is generally used by adjusting the laser output of light from a laser oscillator using an attenuator, a lens, or the like.
【手続補正２】[Procedure amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２２[Correction target item name] 0022
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００２２】このようにして、室温基板上に形成された
酸化インジウム・酸化スズ薄膜における平均レーザ出力
と電気抵抗率（Ａ）、電子移動度（Ｂ）、電子密度
（Ｃ）との関係を図２でグラフに示す。レーザ出力が１
Ｗ／ｃｍ2において、透明導電薄膜の電気抵抗率とし
て、通常４００℃で達成される値、すなわち電気抵抗率
３×１０-4Ω・ｃｍ以下が得られた。The relationship between the average laser output, the electrical resistivity (A), the electron mobility (B), and the electron density (C) in the indium oxide / tin oxide thin film formed on the substrate at room temperature as described above is shown. This is shown in the graph at 2. Laser output is 1
At W / cm 2 , the electrical resistivity of the transparent conductive thin film was a value normally achieved at 400 ° C., that is, an electrical resistivity of 3 × 10 −4 Ω · cm or less.
【手続補正３】[Procedure amendment 3]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２３[Correction target item name] 0023
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００２３】このレーザ出力１Ｗ／ｃｍ2において、室
温基板上に形成された透明導電性薄膜における波長と光
透過率との関係を図３にグラフで示す。平均可視光透過
率は、通常４００℃で達成される値、すなわち９０％以
上の値が室温において得られた。この薄膜のＸ線回折チ
ャートを図４に示す。図中の＊印のピークは酸化インジ
ウム結晶に基づくものである。この図から結晶性のよい
酸化インジウム結晶が室温基板上に形成されていること
が分かる。FIG. 3 is a graph showing the relationship between the wavelength and the light transmittance of the transparent conductive thin film formed on the substrate at room temperature at the laser output of 1 W / cm 2 . The average visible light transmittance was a value normally achieved at 400 ° C., that is, a value of 90% or more was obtained at room temperature. FIG. 4 shows an X-ray diffraction chart of this thin film. The peak marked * in the figure is based on the indium oxide crystal. From this figure, it can be seen that an indium oxide crystal having good crystallinity was formed on the substrate at room temperature.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 勝村 宗英 香川県高松市林町2217番14 工業技術院四 国工業技術研究所内 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Munehide Katsumura 2217-14 Hayashi-cho, Takamatsu-shi, Kagawa Pref.
Claims (2)
照射しながら酸化物半導体を蒸着させることを特徴とす
る透明導電性薄膜の形成方法。1. A method for forming a transparent conductive thin film, comprising depositing an oxide semiconductor on an unheated substrate while irradiating an ultraviolet laser.
項１記載の透明導電性薄膜の形成方法。2. The method for forming a transparent conductive thin film according to claim 1, wherein the temperature of the substrate is maintained at an ambient temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4444298A JP2945968B2 (en) | 1998-02-10 | 1998-02-10 | Method for forming transparent conductive thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4444298A JP2945968B2 (en) | 1998-02-10 | 1998-02-10 | Method for forming transparent conductive thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11229120A true JPH11229120A (en) | 1999-08-24 |
| JP2945968B2 JP2945968B2 (en) | 1999-09-06 |
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ID=12691613
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4444298A Expired - Lifetime JP2945968B2 (en) | 1998-02-10 | 1998-02-10 | Method for forming transparent conductive thin film |
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| Country | Link |
|---|---|
| JP (1) | JP2945968B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006502589A (en) * | 2002-10-11 | 2006-01-19 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | Transparent oxide semiconductor thin film transistor |
| JP2008192604A (en) * | 2007-01-12 | 2008-08-21 | Sumitomo Chemical Co Ltd | Transparent conductive film material |
| JP2008255444A (en) * | 2007-04-06 | 2008-10-23 | Hoya Corp | SUBSTRATES WITH ZnCuSe THIN FILM, AND ITS MANUFACTURING METHOD |
| JP2011214043A (en) * | 2010-03-31 | 2011-10-27 | Mitsubishi Materials Corp | Method and apparatus for forming ito transparent conductive film |
| JP2012219320A (en) * | 2011-04-07 | 2012-11-12 | Mitsubishi Materials Corp | Method and apparatus for forming transparent conductive film for solar cell |
-
1998
- 1998-02-10 JP JP4444298A patent/JP2945968B2/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006502589A (en) * | 2002-10-11 | 2006-01-19 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | Transparent oxide semiconductor thin film transistor |
| EP3196925A1 (en) * | 2002-10-11 | 2017-07-26 | Samsung Display Co., Ltd. | Transparent oxide semiconductor thin film transistors |
| JP2008192604A (en) * | 2007-01-12 | 2008-08-21 | Sumitomo Chemical Co Ltd | Transparent conductive film material |
| JP2008255444A (en) * | 2007-04-06 | 2008-10-23 | Hoya Corp | SUBSTRATES WITH ZnCuSe THIN FILM, AND ITS MANUFACTURING METHOD |
| JP2011214043A (en) * | 2010-03-31 | 2011-10-27 | Mitsubishi Materials Corp | Method and apparatus for forming ito transparent conductive film |
| JP2012219320A (en) * | 2011-04-07 | 2012-11-12 | Mitsubishi Materials Corp | Method and apparatus for forming transparent conductive film for solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2945968B2 (en) | 1999-09-06 |
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