JPH11212116A - Liquid crystal display device and manufacturing method thereof - Google Patents
Liquid crystal display device and manufacturing method thereofInfo
- Publication number
- JPH11212116A JPH11212116A JP10012290A JP1229098A JPH11212116A JP H11212116 A JPH11212116 A JP H11212116A JP 10012290 A JP10012290 A JP 10012290A JP 1229098 A JP1229098 A JP 1229098A JP H11212116 A JPH11212116 A JP H11212116A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- substrate
- display device
- crystal display
- active matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P72/7432—
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
(57)【要約】
【課題】プラスチックやポリマーフィルム等の軽量基板
上に高性能なＴＦＴアクティブマトリクスを形成する手
段を提供する。
【解決手段】ガラスやシリコン等の耐熱性を有する基板
上に通常のプロセスでＴＦＴアクティブマトリクス素子
を形成した後、プラスチック等の所望の基板に貼り合わ
せ、この基板を土台としてガラスあるいはシリコン基板
を化学研磨等で除去してプラスチック等の所望の基板上
にプロセス温度に制約されることなく高性能なＴＦＴア
クティブマトリクス素子を形成する。
(57) Abstract: A means for forming a high-performance TFT active matrix on a lightweight substrate such as a plastic or polymer film is provided. A TFT active matrix element is formed on a heat-resistant substrate such as glass or silicon by a normal process, and then bonded to a desired substrate such as plastic. By removing by polishing or the like, a high-performance TFT active matrix element is formed on a desired substrate such as plastic without being restricted by a process temperature.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、アクティブマトリ
クス型の液晶表示装置に係り、特に、プラスチック基板
やポリマーフィルム等の軽量で耐熱性に乏しい基板上に
形成するのに好適なＴＦＴアクティブマトリックスの構
造および製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type liquid crystal display device, and more particularly to a structure of a TFT active matrix suitable for forming on a lightweight and poorly heat-resistant substrate such as a plastic substrate or a polymer film. And a manufacturing method.
【０００２】[0002]
【従来の技術】薄型，低消費電力の画像情報，文字情報
の表示装置として、薄膜トランジスタ（以下ＴＦＴと記
す）を用いたアクティブマトリックス方式の液晶ディス
プレイが可搬型のパーソナルコンピュータを中心に広く
用いられつつある。この種の液晶表示装置においては低
コスト化と並んでディスプレイモジュールの軽量化が重
要な課題である。このため、モジュールの重量の大半を
占めるガラス基板を軽量化するため板厚を薄くすること
が行われている。しかしながら、薄板化による軽量化に
はモジュール強度確保の点から限界があり、新たな対策
が必要となっている。このような背景から近年、ポリカ
ーボネイト等の軽量なプラスチック基板上にＴＦＴを形
成する技術の開発が行われている。そのような技術の一
例が、コンファレンスレコードオブザ１７thインターナ
ショナルディスプレイリサーチコンファレンス(Confere
nce Record of the 17th International Display Resea
rchConference）１９９７年，Ｍ−３６頁からＭ−３９
頁に記載されている。2. Description of the Related Art An active matrix type liquid crystal display using a thin film transistor (hereinafter referred to as a TFT) has been widely used as a thin, low power consumption display device for image information and character information, mainly in a portable personal computer. is there. In this type of liquid crystal display device, it is important to reduce the weight of the display module as well as to reduce the cost. For this reason, in order to reduce the weight of a glass substrate which occupies most of the weight of the module, the thickness is reduced. However, there is a limit to weight reduction by thinning from the viewpoint of securing module strength, and new measures are required. From such a background, in recent years, a technology for forming a TFT on a lightweight plastic substrate such as polycarbonate has been developed. One example of such technology is the Conference Record of the 17th International Display Research Conference (Confere
nce Record of the 17th International Display Resea
rchConference) 1997, M-36 to M-39
Page.
【０００３】[0003]
【発明が解決しようとする課題】このような従来の技術
における最大の課題は、基板の耐熱性が低いためいかに
基板にダメージを与えない程度の低温で高性能なＴＦＴ
を形成するかにある。この問題を解決するために例えば
ＴＦＴを構成するＳｉ膜やゲート絶縁膜をスパッタリグ
等により低温で成膜したり、パルスレーザを用いて低温
でＳｉ膜を再結晶化することが試みされている。しかし
ながら、このような低温プロセスで得られるＴＦＴの特
性は実用上十分とはいえない。特に高品質なゲート絶縁
膜の低温形成が解決困難な課題である。さらに、プラス
チック基板は耐熱性のみでなく、耐薬品性にも問題があ
り、ホトリソグラフィ工程やエッチング工程で用いる各
種の薬品に対する耐性についても考慮する必要がある。The biggest problem of the prior art is that the TFT has a low temperature and a high performance which does not damage the substrate due to the low heat resistance of the substrate.
To form. In order to solve this problem, for example, it has been attempted to form a Si film or a gate insulating film constituting a TFT at a low temperature by sputtering or the like, or to recrystallize the Si film at a low temperature using a pulse laser. However, the characteristics of the TFT obtained by such a low-temperature process are not practically sufficient. In particular, low-temperature formation of a high-quality gate insulating film is a problem that is difficult to solve. Furthermore, the plastic substrate has a problem not only in heat resistance but also in chemical resistance, and it is necessary to consider the resistance to various chemicals used in the photolithography process and the etching process.
【０００４】以上の様に、プラスチック基板の上に直接
高性能なＴＦＴを形成するためには解決すべき技術課題
が多く、従来のプロセス技術の延長では容易には達成で
きない。As described above, there are many technical problems to be solved in order to form a high-performance TFT directly on a plastic substrate, and it cannot be easily achieved by extending the conventional process technology.
【０００５】[0005]
【課題を解決するための手段】上記の課題を解決するた
めに本発明では以下の手段を講じた。Means for Solving the Problems In order to solve the above problems, the present invention takes the following measures.
【０００６】少なくとも一方が透明な一対の基板と、こ
の基板に挟持された液晶層を有する液晶表示装置の製造
方法において、ガラスあるいはＳｉ等からなる第１の基
板上に複数の走査配線と、これに交差する複数の信号配
線と、前記走査配線と信号配線の交差点近傍にマトリク
ス状に配置された複数の半導体素子と、前記複数の半導
体素子に接続された画素電極からなるアクティブマトリ
クス素子を形成し、前記アクティブマトリクス素子上に
プラスチックやポリマーフィルム等の所望の材料からな
る第２の基板を接合したあと、化学研磨法等の手段で前
記第１の基板を除去し、前記第２の基板に対向するよう
に第３の基板を形成し、これらの間に挟持された液晶層
を形成する製造工程を採用した。In a method for manufacturing a liquid crystal display device having a pair of substrates, at least one of which is transparent, and a liquid crystal layer sandwiched between the substrates, a plurality of scanning wirings are formed on a first substrate made of glass or Si or the like. A plurality of signal wirings intersecting with each other, a plurality of semiconductor elements arranged in a matrix near an intersection of the scanning wirings and the signal wirings, and an active matrix element including pixel electrodes connected to the plurality of semiconductor elements. After joining a second substrate made of a desired material such as a plastic or a polymer film onto the active matrix element, the first substrate is removed by a means such as a chemical polishing method, and the second substrate is opposed to the second substrate. In this case, a manufacturing process of forming a third substrate so as to form a liquid crystal layer sandwiched therebetween is adopted.
【０００７】上記方法によれば、ＴＦＴを含むアクティ
ブマトリクス素子はプラスチック基板の上に直接形成せ
ずに、耐熱性に優れたガラス基板やＳｉ基板上に従来と
同様な製造工程により形成できるので、従来と同様な優
れた特性を有するＴＦＴを形成可能である。また、この
ＴＦＴアクティブマトリクス素子を所望のプラスチック
基板に接着してプラスチック基板を土台として最初のガ
ラス基板等を除去することにより、アクティブマトリク
ス素子を高温の熱処理工程を経ることなくプラスチック
基板上に移すことができるので、軽量な基板上に高性能
なアクティブマトリクス基板を製造できる。According to the above method, an active matrix element including a TFT can be formed on a glass substrate or a Si substrate having excellent heat resistance by a similar manufacturing process without directly forming the active matrix element on a plastic substrate. It is possible to form a TFT having the same excellent characteristics as the conventional one. Also, by bonding the TFT active matrix element to a desired plastic substrate and removing the first glass substrate or the like using the plastic substrate as a base, the active matrix element can be transferred onto the plastic substrate without going through a high-temperature heat treatment step. Therefore, a high-performance active matrix substrate can be manufactured on a lightweight substrate.
【０００８】[0008]
【発明の実施の形態】以下、本発明の実施の形態を図面
を用いて説明する。Embodiments of the present invention will be described below with reference to the drawings.
【０００９】（実施の形態１）図１〜図５は本発明の第
１の実施の形態の製造方法を示す液晶表示装置の各工程
における断面図である。(Embodiment 1) FIGS. 1 to 5 are cross-sectional views showing respective steps of a liquid crystal display device showing a manufacturing method according to a first embodiment of the present invention.
【００１０】ガラス基板１上にＩＴＯよりなる画素電極
１３０を形成し、その上にＳｉＯ2よりなる第１の絶縁
膜２５を形成する。次に第１の絶縁膜上に半導体層３
０，ゲート絶縁膜２０，走査配線１０，層間絶縁膜２
２，信号配線１１，ソース電極１２，保護絶縁膜２３を
順次形成し、ＴＦＴアクティブマトリクス素子を形成す
る（図１）。A pixel electrode 130 made of ITO is formed on a glass substrate 1, and a first insulating film 25 made of SiO 2 is formed thereon. Next, the semiconductor layer 3 is formed on the first insulating film.
0, gate insulating film 20, scanning wiring 10, interlayer insulating film 2
2, a signal wiring 11, a source electrode 12, and a protective insulating film 23 are sequentially formed to form a TFT active matrix element (FIG. 1).
【００１１】ＴＦＴアクティブマトリクス素子自体の製
造法は通常の半導体プロセスに準じた方法でよい。例え
ば、半導体層３０は非晶質シリコン膜を減圧ＣＶＤ法に
より形成温度４５０℃で形成後、エキシマレーザを照射
することにより多結晶シリコン膜に変換する方法により
形成した。また第１の絶縁膜２５，ゲート絶縁膜２０，
層間絶縁膜２２，保護絶縁膜２３はそれぞれプラズマＣ
ＶＤ法により形成した。形成温度は３５０℃である。ま
た、走査配線１０，信号配線１１，ソース電極１２，画
素電極１３０はそれぞれスパッタリング法で形成した。
各膜のパターニングは通常のフォトリソグラフィ法によ
って行った。The method for manufacturing the TFT active matrix element itself may be a method according to a normal semiconductor process. For example, the semiconductor layer 30 is formed by forming an amorphous silicon film by a low pressure CVD method at a formation temperature of 450 ° C., and then irradiating an excimer laser to convert the film into a polycrystalline silicon film. The first insulating film 25, the gate insulating film 20,
The interlayer insulating film 22 and the protective insulating film 23 are formed by plasma C
It was formed by the VD method. The formation temperature is 350 ° C. The scanning wiring 10, the signal wiring 11, the source electrode 12, and the pixel electrode 130 were each formed by a sputtering method.
Patterning of each film was performed by a usual photolithography method.
【００１２】次に完成したＴＦＴアクティブマトリクス
基板上に接着層としてエポキシ樹脂２９を塗布し、さら
にポリエステルからなるプラスチック基板１００を接合
する（図２）。Next, an epoxy resin 29 is applied as an adhesive layer on the completed TFT active matrix substrate, and a plastic substrate 100 made of polyester is bonded (FIG. 2).
【００１３】次にプラスチック基板を土台として、化学
機械研磨法によりガラス基板１を研磨し除去する（図
３）。Next, using the plastic substrate as a base, the glass substrate 1 is polished and removed by a chemical mechanical polishing method (FIG. 3).
【００１４】この時ガラス基板１上に最初に形成したＩ
ＴＯからなる画素電極１３０がエッチングストッパとし
ての役割を果たすので、基板を削りすぎてＴＦＴ素子に
ダメージを与えることを防止できる。以上の工程により
プラスチック基板上に形成されたＴＦＴアクティブマト
リクス素子を得る。At this time, the first I formed on the glass substrate 1
Since the pixel electrode 130 made of TO functions as an etching stopper, it is possible to prevent the TFT element from being damaged by excessively shaving the substrate. Through the above steps, a TFT active matrix element formed on a plastic substrate is obtained.
【００１５】次に、研磨した面に液晶分子を配向させる
ための配向膜ＯＲＩ２を塗布し、焼成後ラビング処理を
施す（図４）。Next, an alignment film ORI2 for aligning liquid crystal molecules is applied to the polished surface, and a rubbing treatment is performed after firing (FIG. 4).
【００１６】最後に、一方の面に遮光膜５１２とカラー
フィルター膜５０７とＩＴＯよりなる対向電極５１０
と、配向処理を施した配向膜ＯＲＩ１を形成したプラス
チックからなる対向基板５０８と先に形成したＴＦＴ基
板をスペーサビーサ等を用いて４ミクロンの間隔を持っ
て対向配置し、その間に液晶組成物５０６を封入しプラ
スチック基板を用いた液晶セルが完成する（図５）。Finally, a light-shielding film 512, a color filter film 507 and a counter electrode 510 made of ITO are formed on one surface.
And a counter substrate 508 made of plastic on which an alignment film ORI1 having been subjected to an alignment process is formed, and a TFT substrate previously formed are disposed so as to face each other at an interval of 4 microns using a spacer beaser or the like, and the liquid crystal composition 506 is interposed therebetween. A liquid crystal cell using the sealed plastic substrate is completed (FIG. 5).
【００１７】この後、ＴＦＴを駆動するための外部駆動
回路を実装して液晶表示装置が完成する。Thereafter, an external drive circuit for driving the TFT is mounted to complete the liquid crystal display device.
【００１８】本実施例によれば、先にも述べたように、
最初の基板がガラスであるので、ＴＦＴアクティブマト
リクス素子自体の製造法は通常の半導体プロセスに準じ
た方法を用いることができるので、高性能なＴＦＴを得
ることができる。ＴＦＴの性能が優れていることによ
り、高精細の画像を容易に表示できる。According to this embodiment, as described above,
Since the first substrate is glass, the TFT active matrix element itself can be manufactured by a method according to a normal semiconductor process, so that a high-performance TFT can be obtained. Due to the excellent performance of the TFT, a high-definition image can be easily displayed.
【００１９】また、上記実施例では外部駆動回路はＴＦ
Ｔ基板の外部に接続する例を述べたが、高性能なＴＦＴ
を利用して駆動回路をもＴＦＴで構成し、同じプラスチ
ック基板上に形成することも容易となる。このようにす
ることにより、実装に係る部品数を削減し、コストを低
減できる。In the above embodiment, the external drive circuit is TF
An example of connecting to the outside of the T substrate has been described, but a high-performance TFT
It is also easy to form a drive circuit by using TFTs and form them on the same plastic substrate. By doing so, the number of components involved in mounting can be reduced, and costs can be reduced.
【００２０】また、ＴＦＴを形成するのとは別種の基板
を後から接合するので基板の材質は様々なものを使用可
能であり、本実施例の様にプラスチック基板を用いるこ
とにより極めて軽量な表示装置を実現できる。上記実施
例では基板としてポリエステルを用いたが、基板はこれ
に限られるものではなく、ポリカーボネイト，アクリル
基板やＰＥＴなどのプラスチックフィルムも用いること
ができる。特にプラスチックフィルムを基板に用いるこ
とにより曲げることが可能な表示装置が得られる。その
ような例を次に示す。Further, since a substrate of a different type from that for forming the TFT is bonded later, various materials can be used for the substrate. By using a plastic substrate as in this embodiment, an extremely lightweight display can be achieved. The device can be realized. Although polyester is used as the substrate in the above embodiment, the substrate is not limited to this, and a polycarbonate, an acrylic substrate, or a plastic film such as PET can be used. In particular, a display device that can be bent can be obtained by using a plastic film for the substrate. An example of such is shown below.
【００２１】（実施の形態２）図６〜図１０は本発明の
第２の実施の形態の製造方法を示す液晶表示装置の各工
程における断面図である。(Embodiment 2) FIGS. 6 to 10 are cross-sectional views showing respective steps of a liquid crystal display device showing a manufacturing method according to a second embodiment of the present invention.
【００２２】ガラス基板１上に第１の実施の形態と同様
に、Ａｌよりなる反射型の画素電極１３１を形成し、そ
の上にＳｉＯ2 よりなる第１の絶縁膜２５を形成する。
次に第１の絶縁膜上に半導体層３０，ゲート絶縁膜２
０，走査配線１０，層間絶縁膜２２，信号配線１１，ソ
ース電極１２，保護絶縁膜２３を順次形成し、ＴＦＴア
クティブマトリクス素子を形成する（図６）。As in the first embodiment, a reflective pixel electrode 131 made of Al is formed on a glass substrate 1, and a first insulating film 25 made of SiO 2 is formed thereon.
Next, the semiconductor layer 30 and the gate insulating film 2 are formed on the first insulating film.
0, a scanning wiring 10, an interlayer insulating film 22, a signal wiring 11, a source electrode 12, and a protective insulating film 23 are sequentially formed to form a TFT active matrix element (FIG. 6).
【００２３】次に完成したＴＦＴアクティブマトリクス
基板上に接着層としてエポキシ樹脂２９を塗布し、さら
にＰＥＴからなるプラスチックフィルム１０１を接合す
る（図７）。Next, an epoxy resin 29 is applied as an adhesive layer on the completed TFT active matrix substrate, and a plastic film 101 made of PET is bonded (FIG. 7).
【００２４】次にプラスチック基板を土台として、化学
機械研磨法によりガラス基板１を研磨し除去する（図
８）。Next, using the plastic substrate as a base, the glass substrate 1 is polished and removed by a chemical mechanical polishing method (FIG. 8).
【００２５】次にガラス基板を研磨除去した面に高分子
分散液晶（ＰＤＬＣ）５５０を塗布する（図９）。Next, a polymer dispersed liquid crystal (PDLC) 550 is applied to the surface of the glass substrate after polishing and removal (FIG. 9).
【００２６】最後に一方の面に対向電極５１０を形成し
たＰＥＴからなる対向基板５１８を高分子分散液晶５５
０上に接着してＰＥＴ基板上の反射型の液晶セルが完成
する（図１０）。Finally, a counter substrate 518 made of PET having a counter electrode 510 formed on one surface is placed on a polymer dispersed liquid crystal 55.
Then, the reflective liquid crystal cell on the PET substrate is completed by bonding on the substrate 0 (FIG. 10).
【００２７】本実施の形態においては基板にＰＥＴフィ
ルムを用い、さらに液晶層にシート状の高分子分散液晶
を用いたので、極めて軽量薄型で折り曲げ可能な表示装
置が実現できる。In this embodiment, since a PET film is used for the substrate and a sheet-like polymer-dispersed liquid crystal is used for the liquid crystal layer, an extremely lightweight, thin, and bendable display device can be realized.
【００２８】また、第１の実施の形態と同様に、最初の
基板がガラスであるので、ＴＦＴアクティブマトリクス
素子自体の製造法は通常の半導体プロセスに準じた方法
を用いることができるので、高性能なＴＦＴを得ること
ができる。ＴＦＴの性能が優れていることにより、高精
細の画像を容易に表示できる。Also, as in the first embodiment, the first substrate is made of glass, and the TFT active matrix element itself can be manufactured by a method according to a normal semiconductor process. A simple TFT can be obtained. Due to the excellent performance of the TFT, a high-definition image can be easily displayed.
【００２９】また、上記実施例では外部駆動回路はＴＦ
Ｔ基板の外部に接続する例を述べたが、高性能なＴＦＴ
を利用して駆動回路をもＴＦＴで構成し、同じプラスチ
ック基板上に形成することも容易となる。このようにす
ることにより、実装に係る部品数を削減し、コストを低
減できる。In the above embodiment, the external drive circuit is TF
An example of connecting to the outside of the T substrate has been described, but a high-performance TFT
It is also easy to form a drive circuit by using TFTs and form them on the same plastic substrate. By doing so, the number of components involved in mounting can be reduced, and costs can be reduced.
【００３０】（実施の形態３）図１１〜図１７は本発明
の第３の実施の形態の製造方法を示す液晶表示装置の各
工程における断面図である。(Embodiment 3) FIGS. 11 to 17 are cross-sectional views showing respective steps of a liquid crystal display device showing a manufacturing method according to a third embodiment of the present invention.
【００３１】ガラス基板１上に第１の実施の形態と同様
に、ＩＴＯよりなる外部接続端子１３２を形成し、その
上にＳｉＯ2 よりなる第１の絶縁膜２５を形成する。次
に第１の絶縁膜上に半導体層３０，ゲート絶縁膜２０，
走査配線１０，層間絶縁膜２２，信号配線１１，ソース
電極，保護絶縁膜２３，Ａｌよりなる反射型画素電極１
３１を順次形成し、ＴＦＴアクティブマトリクス素子を
形成する（図１１）。As in the first embodiment, external connection terminals 132 made of ITO are formed on the glass substrate 1, and a first insulating film 25 made of SiO 2 is formed thereon. Next, on the first insulating film, the semiconductor layer 30, the gate insulating film 20,
Scanning wiring 10, interlayer insulating film 22, signal wiring 11, source electrode, protective insulating film 23, reflective pixel electrode 1 made of Al
31 are sequentially formed to form a TFT active matrix element (FIG. 11).
【００３２】次にＴＦＴアクティブマトリクス素子上に
高分子分散液晶（ＰＤＬＣ）５５０を塗布する（図１
２）。Next, a polymer dispersed liquid crystal (PDLC) 550 is applied on the TFT active matrix element (FIG. 1).
2).
【００３３】最後に一方の面に対向電極５１０を形成し
たポリエステルからなる対向基板５０８を高分子分散液
晶５５０上に接着する（図１３）。Finally, a counter substrate 508 made of polyester having a counter electrode 510 formed on one surface is bonded onto the polymer dispersed liquid crystal 550 (FIG. 13).
【００３４】次に、プラスチックの対向基板５０８を土
台として、化学機械研磨法によりガラス基板１を研磨し
除去する（図１４）。Next, the glass substrate 1 is polished and removed by a chemical mechanical polishing method using the plastic counter substrate 508 as a base (FIG. 14).
【００３５】この時ガラス基板１上に最初に形成したＩ
ＴＯからなる外部接続端子１３２がエッチングストッパ
としての役割を果たすので、基板を削りすぎてＴＦＴ素
子にダメージを与えることを防止できる。以上の工程に
よりプラスチック基板上に形成されたＴＦＴアクティブ
マトリクス素子を得る。At this time, the first I formed on the glass substrate 1
Since the external connection terminal 132 made of TO plays a role as an etching stopper, it is possible to prevent the substrate from being cut too much and damaging the TFT element. Through the above steps, a TFT active matrix element formed on a plastic substrate is obtained.
【００３６】最後に、ＴＦＴアクティブマトリクスを駆
動するドライバ回路６００をソルダーＳＬＤを介して、
対向基板とは反対側の面に露出した外部接続端子１３２
にボンディングして液晶表示装置が完成する（図１
５）。Finally, a driver circuit 600 for driving the TFT active matrix is connected via a solder SLD.
External connection terminal 132 exposed on the surface opposite to the opposite substrate
To complete the liquid crystal display device (see FIG. 1).
5).
【００３７】図１６および図１７は完成した液晶表示装
置をＴＦＴ基板側から見た全体平面図およびＡ−Ａ′で
の断面図である。従来の液晶表示装置では、ＴＦＴ基板
の表面にドライバ回路を実装するためのボンディングパ
ッドを形成する必要があったため表示エリアの周辺にこ
のための領域を取る必要があり、額縁と呼ばれる表示領
域周辺部分の面積を縮小することには限界があったが、
本実施の形態の液晶表示装置ではドライバ回路をＴＦＴ
基板の裏面に実装できるので、図１７からわかるように
ＴＦＴ基板と対向基板は同じ大きさにすることができ、
額縁を縮小できる効果がある。よって、従来に比べてよ
りコンパクトな端末機器を構成することができる。FIGS. 16 and 17 are an overall plan view and a cross-sectional view taken along line AA 'of the completed liquid crystal display device as viewed from the TFT substrate side. In the conventional liquid crystal display device, it was necessary to form a bonding pad for mounting a driver circuit on the surface of the TFT substrate, so it was necessary to provide an area for this around the display area. There was a limit to reducing the area of
In the liquid crystal display device of the present embodiment, the driver circuit is a TFT.
Since it can be mounted on the back side of the substrate, as can be seen from FIG. 17, the TFT substrate and the counter substrate can be made the same size,
This has the effect of reducing the frame. Therefore, a more compact terminal device can be configured as compared with the related art.
【００３８】また本発明の液晶表示装置の製造方法およ
び構成は、上記の３つの例に限定されるものではない。
例えば、ＴＦＴとしては、非晶質シリコンを用いた逆ス
タガ型の素子も同様に用いることができる。また、単結
晶シリコン基板上に形成したＭＯＳトランジスタであっ
ても、ガラス基板を研磨する工程でシリコン基板を研磨
除去するようにすることにより適用可能である。また、
液晶表示モードについても、例えば、ＴＮ液晶や高分子
分散液晶以外にも、ゲストホスト液晶や強誘電液晶等も
同様に用いることができる。Further, the manufacturing method and configuration of the liquid crystal display device of the present invention are not limited to the above three examples.
For example, as a TFT, an inverted staggered element using amorphous silicon can be similarly used. Further, even a MOS transistor formed on a single crystal silicon substrate can be applied by polishing and removing the silicon substrate in the step of polishing the glass substrate. Also,
Regarding the liquid crystal display mode, for example, a guest-host liquid crystal, a ferroelectric liquid crystal, or the like can be similarly used in addition to the TN liquid crystal and the polymer dispersed liquid crystal.
【００３９】[0039]
【発明の効果】以上の様に本発明によれば、プラスチッ
ク基板やポリマーフィルム等の軽量で耐熱性に乏しい基
板上にも高性能のＴＦＴを形成できる。As described above, according to the present invention, a high-performance TFT can be formed on a light-weight substrate having poor heat resistance, such as a plastic substrate or a polymer film.
【図１】本発明の第１の実施の形態に係る液晶表示装置
の製造方法を示す断面模式図。FIG. 1 is a schematic sectional view illustrating a method for manufacturing a liquid crystal display device according to a first embodiment of the present invention.
【図２】本発明の第１の実施の形態に係る液晶表示装置
の製造方法を示す断面模式図。FIG. 2 is a schematic cross-sectional view illustrating the method for manufacturing the liquid crystal display device according to the first embodiment of the present invention.
【図３】本発明の第１の実施の形態に係る液晶表示装置
の製造方法を示す断面模式図。FIG. 3 is a schematic cross-sectional view illustrating the method for manufacturing the liquid crystal display device according to the first embodiment of the present invention.
【図４】本発明の第１の実施の形態に係る液晶表示装置
の製造方法を示す断面模式図。FIG. 4 is a schematic cross-sectional view illustrating the method for manufacturing the liquid crystal display device according to the first embodiment of the present invention.
【図５】本発明の第１の実施の形態に係る液晶表示装置
の製造方法を示す断面模式図。FIG. 5 is a schematic cross-sectional view illustrating the method for manufacturing the liquid crystal display device according to the first embodiment of the present invention.
【図６】本発明の第２の実施の形態に係る液晶表示装置
の製造方法を示す断面模式図。FIG. 6 is a schematic sectional view illustrating a method for manufacturing a liquid crystal display device according to a second embodiment of the present invention.
【図７】本発明の第２の実施の形態に係る液晶表示装置
の製造方法を示す断面模式図。FIG. 7 is a schematic sectional view illustrating a method for manufacturing a liquid crystal display device according to a second embodiment of the present invention.
【図８】本発明の第２の実施の形態に係る液晶表示装置
の製造方法を示す断面模式図。FIG. 8 is a schematic sectional view illustrating a method for manufacturing a liquid crystal display device according to a second embodiment of the present invention.
【図９】本発明の第２の実施の形態に係る液晶表示装置
の製造方法を示す断面模式図。FIG. 9 is a schematic sectional view illustrating a method for manufacturing a liquid crystal display device according to a second embodiment of the present invention.
【図１０】本発明の第２の実施の形態に係る液晶表示装
置の製造方法を示す断面模式図。FIG. 10 is a schematic sectional view illustrating a method for manufacturing a liquid crystal display device according to a second embodiment of the present invention.
【図１１】本発明の第３の実施の形態に係る液晶表示装
置の製造方法を示す断面模式図。FIG. 11 is a schematic sectional view illustrating a method for manufacturing a liquid crystal display device according to a third embodiment of the present invention.
【図１２】本発明の第３の実施の形態に係る液晶表示装
置の製造方法を示す断面模式図。FIG. 12 is a schematic sectional view illustrating a method for manufacturing a liquid crystal display device according to a third embodiment of the present invention.
【図１３】本発明の第３の実施の形態に係る液晶表示装
置の製造方法を示す断面模式図。FIG. 13 is a schematic cross-sectional view illustrating a method for manufacturing a liquid crystal display device according to a third embodiment of the present invention.
【図１４】本発明の第３の実施の形態に係る液晶表示装
置の製造方法を示す断面模式図。FIG. 14 is a schematic sectional view illustrating a method for manufacturing a liquid crystal display device according to a third embodiment of the present invention.
【図１５】本発明の第３の実施の形態に係る液晶表示装
置の製造方法を示す断面模式図。FIG. 15 is a schematic sectional view illustrating a method for manufacturing a liquid crystal display device according to a third embodiment of the present invention.
【図１６】発明の第３の実施の形態に係る液晶表示装置
平面模式図。FIG. 16 is a schematic plan view of a liquid crystal display device according to a third embodiment of the present invention.
【図１７】発明の第３の実施の形態に係る液晶表示装置
断面模式図。FIG. 17 is a schematic sectional view of a liquid crystal display device according to a third embodiment of the invention.
１…ガラス基板、１０…走査配線、１１…信号配線、１
２…ソース電極、１５…接続電極、２０…ゲート絶縁
膜、２２…層間絶縁膜、２３…保護絶縁膜、２５…第１
の絶縁膜、２９…エポキシ樹脂、３０…半導体層、１０
０…プラスチックフィルム、１０１…ＰＥＴフィルム、
ＯＲＩ１，ＯＲＩ２…配向膜、１３０，１３１…画素電
極、５０５…偏光板、５０６…液晶組成物、５０７…カ
ラーフィルター膜、５０８，５１８…対向基板、５１０
…対向電極、５１２…遮光膜、５５０…高分子分散液
晶、ＳＬＤ…ソルダー、ＤＩＳ…表示領域、６００…ド
ライバ回路。DESCRIPTION OF SYMBOLS 1 ... Glass substrate, 10 ... Scan wiring, 11 ... Signal wiring, 1
2: Source electrode, 15: Connection electrode, 20: Gate insulating film, 22: Interlayer insulating film, 23: Protective insulating film, 25: First
Insulating film 29, epoxy resin, 30 semiconductor layer, 10
0: plastic film, 101: PET film,
ORI1, ORI2: alignment film, 130, 131: pixel electrode, 505: polarizing plate, 506: liquid crystal composition, 507: color filter film, 508, 518: counter substrate, 510
.., Counter electrode, 512, light shielding film, 550, polymer dispersed liquid crystal, SLD, solder, DIS, display area, 600, driver circuit.
Claims (8)
の基板に挟持された液晶層を有する液晶表示装置の製造
方法において、 第１の基板上に画素電極および外部接続端子を形成する
工程と、 前記画素電極および外部接続端子上に絶縁膜を形成する
工程と、 前記絶縁膜上に複数の走査配線と、これに交差する複数
の信号配線と、前記走査配線と信号配線の交差点近傍に
マトリクス状に配置された複数の半導体素子とからなる
アクティブマトリクス素子を形成する工程と、 前記アクティブマトリクス素子と第２の基板を接合する
工程と、 前記第１の基板を除去する工程と、 前記第２の基板に対向するように第３の基板を形成し、
これらの間に挟持された液晶層を形成する工程を少なく
とも有することを特徴とする液晶表示装置の製造方法。1. A method for manufacturing a liquid crystal display device having a pair of substrates, at least one of which is transparent, and a liquid crystal layer sandwiched between the substrates, comprising: forming a pixel electrode and an external connection terminal on a first substrate; Forming an insulating film on the pixel electrode and the external connection terminal; a plurality of scanning lines on the insulating film; a plurality of signal lines intersecting the plurality of scanning lines; and a matrix near an intersection of the scanning line and the signal lines. Forming an active matrix element including a plurality of semiconductor elements arranged in a matrix, bonding the active matrix element to a second substrate, removing the first substrate, and removing the second substrate. Forming a third substrate so as to face the substrate,
A method for manufacturing a liquid crystal display device, comprising at least a step of forming a liquid crystal layer sandwiched therebetween.
信号配線と、前記走査配線と信号配線の交差点近傍にマ
トリクス状に配置された複数の半導体素子と、前記複数
の半導体素子に接続された画素電極からなるアクティブ
マトリクス素子と対向基板とに挟持された液晶層を有す
る液晶表示装置の製造方法において、 第１の基板上に複数の走査配線と、これに交差する複数
の信号配線と、前記走査配線と信号配線の交差点近傍に
マトリクス状に配置された複数の半導体素子と、前記複
数の半導体素子に接続された画素電極からなるアクティ
ブマトリクス素子を形成する工程と、 前記アクティブマトリクス素子上に前記液晶層を形成す
る工程と、 前記液晶層上に前記対向基板を形成する工程と、 前記第１の基板を除去する工程とを少なくとも有するこ
とを特徴とする液晶表示装置の製造方法。2. A plurality of scanning lines, a plurality of signal lines intersecting with the plurality of scanning lines, a plurality of semiconductor elements arranged in a matrix near an intersection of the scanning lines and the signal lines, and a connection to the plurality of semiconductor elements. A method for manufacturing a liquid crystal display device having a liquid crystal layer sandwiched between an active matrix element formed of a divided pixel electrode and a counter substrate, comprising: a plurality of scanning wirings on a first substrate; Forming an active matrix element including a plurality of semiconductor elements arranged in a matrix near an intersection of the scanning wiring and the signal wiring, and a pixel electrode connected to the plurality of semiconductor elements; Forming the liquid crystal layer, forming the counter substrate on the liquid crystal layer, and removing the first substrate. A method for manufacturing a liquid crystal display device, comprising:
信号配線と、前記走査配線と信号配線の交差点近傍にマ
トリクス状に配置された複数の半導体素子と、前記複数
の半導体素子に接続された画素電極からなるアクティブ
マトリクス素子と対向基板とに挟持された液晶層を有す
る液晶表示装置の製造方法において、 第１の基板上に外部接続端子を形成する工程と、 前記外部接続端子上に絶縁膜を形成する工程と、 前記絶縁膜上に複数の走査配線と、これに交差する複数
の信号配線と、前記走査配線と信号配線の交差点近傍に
マトリクス状に配置された複数の半導体素子と、前記複
数の半導体素子に接続された画素電極からなるアクティ
ブマトリクス素子を形成する工程と、 前記アクティブマトリクス素子上に前記液晶層を形成す
る工程と、 前記液晶層上に前記対向基板を形成する工程と、 前記第１の基板を除去する工程と、 前記外部接続端子に駆動回路を内蔵したドライバチップ
を接続する工程とを少なくとも有することを特徴とする
液晶表示装置の製造方法。3. A plurality of scanning lines, a plurality of signal lines intersecting with the plurality of scanning lines, a plurality of semiconductor elements arranged in a matrix near an intersection of the scanning lines and the signal lines, and a connection to the plurality of semiconductor elements. A method of manufacturing a liquid crystal display device having a liquid crystal layer sandwiched between an active matrix element composed of separated pixel electrodes and a counter substrate, comprising: forming an external connection terminal on a first substrate; Forming an insulating film, a plurality of scanning wirings on the insulating film, a plurality of signal wirings intersecting with the plurality of scanning wirings, and a plurality of semiconductor elements arranged in a matrix near an intersection of the scanning wirings and the signal wirings; Forming an active matrix element including pixel electrodes connected to the plurality of semiconductor elements; and forming the liquid crystal layer on the active matrix element. Forming at least a counter substrate on the liquid crystal layer; removing the first substrate; and connecting a driver chip having a built-in drive circuit to the external connection terminal. Of manufacturing a liquid crystal display device.
信号配線と、前記走査配線と信号配線の交差点近傍にマ
トリクス状に配置された複数の半導体素子と、前記複数
の半導体素子に接続された画素電極からなるアクティブ
マトリクス素子と、対向基板とに挟持された液晶層を有
する液晶表示装置において、 前記アクティブマトリクス素子は、基板上に接着層を介
して接合されてなることを特徴とする液晶表示装置。4. A plurality of scanning lines, a plurality of signal lines intersecting with the plurality of scanning lines, a plurality of semiconductor elements arranged in a matrix near an intersection of the scanning lines and the signal lines, and a connection to the plurality of semiconductor elements. A liquid crystal display device having a liquid crystal layer sandwiched between an active matrix element composed of separated pixel electrodes and a counter substrate, wherein the active matrix element is bonded to the substrate via an adhesive layer. Liquid crystal display.
信号配線と、前記走査配線と信号配線の交差点近傍にマ
トリクス状に配置された複数の半導体素子と、前記複数
の半導体素子に接続された画素電極からなるアクティブ
マトリクス素子と、対向基板とに挟持された液晶層と、
前記アクティブマトリクス素子を駆動するドライバ回路
を有する液晶表示装置において、前記ドライバ回路は、
前記アクティブマトリクス素子を挟んで前記液晶層とは
反対側の面に形成されていることを特徴とする液晶表示
装置。5. A plurality of scanning lines, a plurality of signal lines intersecting with the plurality of scanning lines, a plurality of semiconductor elements arranged in a matrix near an intersection of the scanning lines and the signal lines, and a connection to the plurality of semiconductor elements. An active matrix element consisting of a pixel electrode, a liquid crystal layer sandwiched between a counter substrate,
In a liquid crystal display device having a driver circuit for driving the active matrix element, the driver circuit includes:
A liquid crystal display device formed on a surface opposite to the liquid crystal layer with the active matrix element interposed therebetween.
装置において、前記基板、または前記対向基板はプラス
チック，ポリマーフィルム等の有機化合物を主成分とす
る材料またはステンレス箔，アルミニウム箔等の金属箔
で構成されてなることを特徴とする液晶表示装置。6. The liquid crystal display device according to claim 4, wherein said substrate or said counter substrate is made of a material mainly composed of an organic compound such as a plastic or a polymer film, or a stainless steel foil, an aluminum foil or the like. A liquid crystal display device comprising a metal foil as described above.
載の液晶表示装置において、前記液晶層は高分子分散型
液晶であることを特徴とする液晶表示装置。7. The liquid crystal display device according to claim 4, wherein said liquid crystal layer is a polymer-dispersed liquid crystal.
載の液晶表示装置において、前記第２の基板、または前
記第３の基板または、前記対向基板は、プラスチック，
ポリマーフィルム等の有機化合物を主成分とする材料ま
たはステンレス箔，アルミニウム箔等の金属箔で構成さ
れてなることを特徴とする液晶表示装置の製造方法。8. The liquid crystal display device according to claim 1, wherein the second substrate, the third substrate, or the counter substrate is made of plastic,
A method for manufacturing a liquid crystal display device, comprising a material mainly composed of an organic compound such as a polymer film or a metal foil such as a stainless steel foil or an aluminum foil.
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|---|---|---|---|
| JP01229098A JP3482856B2 (en) | 1998-01-26 | 1998-01-26 | Liquid crystal display device and method of manufacturing the same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01229098A JP3482856B2 (en) | 1998-01-26 | 1998-01-26 | Liquid crystal display device and method of manufacturing the same |
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| Publication Number | Publication Date |
|---|---|
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| JP3482856B2 JP3482856B2 (en) | 2004-01-06 |
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ID=11801223
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| US6566154B2 (en) | 2001-06-04 | 2003-05-20 | Nec Corporation | Method for manufacturing liquid crystal display device |
| US6717152B2 (en) | 2000-11-27 | 2004-04-06 | Sharp Kabushiki Kaisha | Electromagnetic wave detecting device and manufacturing method thereof |
| JP2004264470A (en) * | 2003-02-24 | 2004-09-24 | Seiu Kagi Kofun Yugenkoshi | Reflective TFT liquid crystal display panel and method of manufacturing the same |
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