[go: up one dir, main page]

JPH11219511A - Magnetic recording medium and magnetic recording device - Google Patents

Magnetic recording medium and magnetic recording device

Info

Publication number
JPH11219511A
JPH11219511A JP32473198A JP32473198A JPH11219511A JP H11219511 A JPH11219511 A JP H11219511A JP 32473198 A JP32473198 A JP 32473198A JP 32473198 A JP32473198 A JP 32473198A JP H11219511 A JPH11219511 A JP H11219511A
Authority
JP
Japan
Prior art keywords
magnetic
recording medium
magnetic recording
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32473198A
Other languages
Japanese (ja)
Inventor
Kariyou Chiyou
家良 張
Masahiro Oka
正裕 岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Priority to JP32473198A priority Critical patent/JPH11219511A/en
Publication of JPH11219511A publication Critical patent/JPH11219511A/en
Pending legal-status Critical Current

Links

Landscapes

  • Magnetic Record Carriers (AREA)

Abstract

PROBLEM TO BE SOLVED: To make an SN ratio, etc., better, recording and reproducing characteristic excellent, reliability high and high-density recording possible by successively laminating a ground surface layer having at least a B2 crystal structure and a Co alloy magnetic layer on a nonmagnetic substrate and forming a seed layer consisting essentially of Cr between the nonmagnetic substrate and the ground surface layer. SOLUTION: The seed layer consisting essentially of the Cr and the ground surface layer having the B2 crystal structure, such as NiAl, are successively formed on the nonmagnetic substrate and thereafter, the Co alloy magnetic layer is formed thereon. Further, the second ground surface layer consisting essentially of the Cr is preferably formed between the ground surface layer and the Co alloy magnetic layer. Namely, the seed layer essentially consisting of the Cr is disposed between the nonmagnetic substrate and the ground surface layer having the B2 crystal structure. The purpose thereof is to control the alignment of the crystal face of the ground surface layer formed on the seed layer, the second ground surface layer and eventually the Co alloy magnetic layer. As a result, the ratio of the axis of easy magnetization aligned within the substrate plane and a disk circumferential direction is greatly improved.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は磁気ディスク装置用
などに使用される情報記録密度が高く、かつ再生特性に
優れた信頼性の高い磁気記録媒体、および磁気記録装置
に存する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention resides in a highly reliable magnetic recording medium having a high information recording density and excellent reproducing characteristics, and a magnetic recording apparatus used for a magnetic disk drive or the like.

【0002】[0002]

【従来の技術】記録装置に多用されている円盤状の磁気
記録媒体(以下、「磁気ディスク」ということがあ
る。)は従来、NiP等の非磁性材料被覆無電解めっき
などをほどこした、例えばAl−Mg系合金製の非磁性
基板(以下、単に「基板」ということがある。)上にス
パッタリング法によりCr又はCr合金層、Co合金磁
性層を形成し、その上にアモルファスカーボンなどを主
成分とする保護層、さらには潤滑層等を形成するのが一
般的であった。
2. Description of the Related Art A disk-shaped magnetic recording medium (hereinafter, sometimes referred to as a "magnetic disk") often used in a recording apparatus is conventionally provided with a non-magnetic material such as NiP by electroless plating. A Cr or Cr alloy layer and a Co alloy magnetic layer are formed by a sputtering method on a non-magnetic substrate (hereinafter, sometimes simply referred to as a “substrate”) made of an Al—Mg alloy, and amorphous carbon or the like is mainly formed thereon. In general, a protective layer as a component, and further a lubricating layer and the like were formed.

【0003】このとき基板のNiPめっき層表面に同心
状のテキスチャリングを施すことが多く、その方法とし
てはダイアモンドスラリーなどを利用して同心状の機械
式テキスチャリングを施すことが一般的である。これ
は、適度な表面粗さを与えることによって、媒体とヘッ
ドとの間の摩擦特性を改善することができることと、こ
の同心状のテキスチャリング構造に沿ってCr層の結晶
が特定の方向に配向することによって、その上に形成さ
れるCo合金磁性層の結晶構造を支配して結果的に磁性
薄膜の磁化容易軸の方向をディスク円周方向に向けるこ
とができるという理由による。磁化容易軸がディスク円
周方向に向いていることにより媒体の記録再生特性を向
上させることができる。
[0003] At this time, concentric texturing is often performed on the surface of the NiP plating layer of the substrate, and as a method, concentric mechanical texturing is generally performed using diamond slurry or the like. This can improve the friction characteristics between the media and the head by giving a moderate surface roughness, and the crystal of the Cr layer is oriented in a specific direction along this concentric texturing structure. By doing so, the crystal structure of the Co alloy magnetic layer formed thereon is controlled, and as a result, the direction of the axis of easy magnetization of the magnetic thin film can be directed in the circumferential direction of the disk. Since the axis of easy magnetization is oriented in the circumferential direction of the disk, the recording and reproducing characteristics of the medium can be improved.

【0004】近年、耐衝撃性、表面平滑性などの見地か
ら、Al−Mg系合金基板に代わってガラス、中でも結
晶化ガラスやシリコン、チタンなどの基板が使用され始
めている。これらの基板においても基板表面にNiPな
どの金属膜を形成した後に同様の機械式テキスチャリン
グを施すことができ、摩擦特性や磁化容易軸方向の制御
などに同様の効果を得ることができる。磁気記録媒体に
おいては、今後更に高記録密度化が要求されており、そ
のため、さらなる磁性層における磁性粒子の微細化が必
要とされており、例えば磁気ディスクにおいて一般に用
いるAl−Mg系合金やガラスなどの非磁性基板上のC
r又はCr合金層やCoCrTaPt合金などのCo合
金磁性層における粒径を微細化するために、各層におけ
る膜厚の低減、成膜時の低温化などの各種提案がなされ
ている。しかし、高密度化に対応した粒径の微細化の要
求はこれらの成果を上回るスピードで進みつつある。
[0004] In recent years, from the viewpoints of impact resistance and surface smoothness, substrates of glass, especially crystallized glass, silicon, titanium, etc. have begun to be used instead of Al-Mg based alloy substrates. In these substrates, similar mechanical texturing can be performed after forming a metal film such as NiP on the substrate surface, and similar effects can be obtained in controlling the friction characteristics and the direction of the axis of easy magnetization. In the magnetic recording media, further higher recording density is required in the future, and therefore, further miniaturization of the magnetic particles in the magnetic layer is required. For example, Al-Mg alloys and glasses generally used in magnetic disks are used. C on non-magnetic substrate
Various proposals have been made to reduce the grain size in each layer, such as reducing the film thickness and lowering the temperature at the time of film formation, in order to reduce the particle size in the r or Cr alloy layer or the Co alloy magnetic layer such as the CoCrTaPt alloy. However, the demand for finer grain sizes corresponding to higher densities is progressing faster than these results.

【0005】この問題を解決し、より優れた磁気特性を
得るために新たな下地層として、NiAl等のB2結晶
構造を有する下地層を用いる技術が開発された。この技
術を用いることにより、Cr下地層を使用した場合に比
べて高い保磁力を実現するとともに、磁性層の結晶粒を
微細なものにすることが可能で高密度記録の可能な磁気
記録媒体を得ることができる。又、Cr又はCr合金層
の下(基板側)にB2結晶構造を有する合金層を用いる
提案もなされている(欧州特許0704839等)。
In order to solve this problem and obtain more excellent magnetic properties, a technique has been developed in which an underlayer having a B2 crystal structure such as NiAl is used as a new underlayer. By using this technology, a high coercive force can be realized as compared to the case where a Cr underlayer is used, and a magnetic recording medium capable of high-density recording by making crystal grains of the magnetic layer fine can be realized. Obtainable. It has also been proposed to use an alloy layer having a B2 crystal structure below the Cr or Cr alloy layer (substrate side) (European Patent No. 0704839).

【0006】しかし、本発明者らが検討した結果、Ni
Al下地層を前述の同心状の機械式テキスチャリングを
施した基板に用いても磁化容易軸がディスク円周方向に
向く現象は観測されず、ほぼディスク面内にランダムな
磁気特性を持つ磁性膜となってしまった。又、B2結晶
構造を有する合金層は媒体粒径の微細化には効果がある
ものの、この合金層の主な結晶面が基板面に対して傾い
て配向してしまい、その結果、その上に設けるCr又は
Cr合金層における結晶面もエピタキシャルの成長によ
り基板面に対して傾いて配向し、更に上に設けるCo合
金磁性層の主配向成分の結晶面も基板面に対して傾くの
で磁化容易軸が基板面内に配向できなくなるという欠点
がある。
However, as a result of the study by the present inventors, Ni
Even when the Al underlayer is used for the substrate on which the above-mentioned concentric mechanical texturing has been performed, the phenomenon that the axis of easy magnetization is oriented in the circumferential direction of the disk is not observed, and a magnetic film having random magnetic characteristics almost in the disk surface. It has become. Further, although the alloy layer having the B2 crystal structure is effective in reducing the media grain size, the main crystal plane of the alloy layer is inclined and oriented with respect to the substrate surface, and as a result, The crystal plane of the provided Cr or Cr alloy layer is also oriented at an inclination with respect to the substrate surface by epitaxial growth, and the crystal plane of the main orientation component of the Co alloy magnetic layer further provided is also inclined with respect to the substrate surface, so that the axis of easy magnetization is formed. However, there is a disadvantage that it cannot be oriented in the substrate plane.

【0007】一般的に、ディスク面内に周方向への磁気
異方性配向を持つ磁気ディスク媒体は異方性配向をもた
ないものに比べて、特に高密度記録時の再生出力の低下
が小さく、SN比、PW50などの記録再生特性に優れ
ていることが知られているが、このNiAl下地層を用
いた磁気ディスク媒体においてはこの磁気異方性をもた
ないにもかかわらず、周方向配向媒体にかなり近い記録
再生特性を示す。この理由はこのような磁性膜結晶粒の
微細化効果によるところが大きいと考えられる。従っ
て、NiAl等のB2結晶構造を有する下地層の結晶粒
子の微細化効果を生かしながら、基板面内円周方向への
磁気異方性を与えることができるならば、さらに優れた
記録再生特性を持つ磁気ディスク媒体が得られることが
期待されるが、現在のところ実現されていなかった。
In general, a magnetic disk medium having a magnetic anisotropic orientation in the circumferential direction in the disk surface has a lower reproduction output especially at the time of high-density recording than a magnetic disk medium having no anisotropic orientation. It is known that it is small and has excellent recording / reproducing characteristics such as SN ratio and PW50. The recording / reproducing characteristics are very close to those of the directional medium. The reason for this is considered to be largely due to such an effect of making the magnetic film crystal grains fine. Therefore, if magnetic anisotropy in the circumferential direction within the substrate surface can be provided while utilizing the effect of miniaturizing the crystal grains of the underlayer having a B2 crystal structure such as NiAl, more excellent recording / reproducing characteristics can be obtained. It is expected that a magnetic disk medium will be obtained, but it has not been realized at present.

【0008】[0008]

【発明が解決しようとする課題】本発明は非磁性基板上
に、好ましくはその表面に同心状の機械式テキスチャリ
ングを施した基板上に下地層としてNiAl等のB2結
晶構造を有する下地層を使用した磁気記録媒体におい
て、Cr下地層を使用した場合と同様に基板面内及びデ
ィスク円周方向への磁化容易軸配向を確保することによ
って、SN比等を改良し、記録再生特性に優れ、信頼性
が高く、高密度記録の可能な優れた磁気記録媒体および
磁気記録装置を提供することにある。
SUMMARY OF THE INVENTION The present invention provides an underlayer having a B2 crystal structure such as NiAl as an underlayer on a non-magnetic substrate, preferably on a substrate having concentric mechanical texturing on its surface. In the magnetic recording medium used, as in the case where a Cr underlayer is used, the easy magnetization axis orientation in the substrate plane and in the disk circumferential direction is ensured, thereby improving the SN ratio and the like, and having excellent recording and reproducing characteristics. An object of the present invention is to provide an excellent magnetic recording medium and a magnetic recording device which are highly reliable and capable of high-density recording.

【0009】[0009]

【課題を解決するための手段】本発明は、かかる観点か
ら、鋭意検討した結果なされたものであり、非磁性基板
上に、少なくともB2結晶構造を有する下地層、および
Co合金磁性層を順次積層した磁気記録媒体であって、
非磁性基板と該下地層との間にCrを主成分とする種子
層を有することを特徴とする磁気記録媒体およびこれを
用いた磁気記録装置を提供するものである。
SUMMARY OF THE INVENTION The present invention has been made as a result of intensive studies from this point of view. In this case, an underlayer having at least a B2 crystal structure and a Co alloy magnetic layer are sequentially laminated on a nonmagnetic substrate. Magnetic recording medium,
An object of the present invention is to provide a magnetic recording medium having a seed layer containing Cr as a main component between a nonmagnetic substrate and an underlayer, and a magnetic recording apparatus using the same.

【0010】[0010]

【発明の実施の形態】本発明の磁気記録媒体における非
磁性基板としては、Alを主成分とした例えばAl−M
g合金等のAl合金基板や、通常のソーダガラス、アル
ミノシリケート系ガラス、非結晶ガラス類、シリコン、
チタン、セラミックス、各種樹脂からなる基板など、非
磁性基板であれば任意のものを用いることができる。中
でもAl合金基板や結晶化ガラス等のガラス製基板を用
いることが好ましい。磁気ディスクの製造工程において
は、まず基板の洗浄・乾燥が行われるのが通常であり、
本発明においても各層の密着性を確保する見地からもそ
の形成前に洗浄、乾燥を行うことが望ましい。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The non-magnetic substrate of the magnetic recording medium of the present invention is, for example, an Al-M
Al alloy substrate such as g alloy, normal soda glass, aluminosilicate glass, amorphous glass, silicon,
Any non-magnetic substrate such as a substrate made of titanium, ceramics, and various resins can be used. Among them, it is preferable to use a glass substrate such as an Al alloy substrate or crystallized glass. In the process of manufacturing a magnetic disk, it is usual that the substrate is first washed and dried.
In the present invention as well, from the viewpoint of ensuring the adhesion of each layer, it is desirable to perform washing and drying before the formation.

【0011】本発明の磁気記録媒体の製造に際しては、
非磁性基板表面にNiP等の非磁性金属被覆層を形成す
ることが好ましい。非磁性金属被覆層を形成する手法と
しては、無電解めっき法、スパッタリング法、真空蒸着
法、CVD法など薄膜形成に用いられる方法を利用する
ことができる。導電性の材料からなる基板の場合であれ
ば電解めっきを使用することが可能である。非磁性金属
被覆層の膜厚は50nm以上あればよい。ただし、磁気
ディスク媒体の生産性などを考慮すると50nm以上5
00nm以下であることが好ましい。さらに好ましくは
50nm以上300nm以下である。
In manufacturing the magnetic recording medium of the present invention,
It is preferable to form a nonmagnetic metal coating layer such as NiP on the surface of the nonmagnetic substrate. As a method for forming the nonmagnetic metal coating layer, a method used for forming a thin film such as an electroless plating method, a sputtering method, a vacuum evaporation method, and a CVD method can be used. In the case of a substrate made of a conductive material, it is possible to use electrolytic plating. The thickness of the nonmagnetic metal coating layer may be 50 nm or more. However, considering the productivity of the magnetic disk medium and the like, 50 nm or more 5
It is preferably not more than 00 nm. More preferably, it is 50 nm or more and 300 nm or less.

【0012】また、非磁性金属被覆層を成膜する領域は
基板表面全域が望ましいが、一部だけ、例えばテキスチ
ャリングを施す領域のみでも実施可能である。又、基板
表面、又は非磁性金属被覆層が形成された基板表面に同
心状テキスチャリングを施すのが好ましい。本発明にお
いて同心状テキスチャリングとは、例えば遊離砥粒とテ
キスチャーテープを使用した機械式テキスチャリングや
レーザー光線などを利用したテキスチャリング加工、又
はこれらを併用することによって、円周方向に研磨する
ことによって基板円周方向に微小溝を多数形成した状態
を指称する。
The area where the non-magnetic metal coating layer is formed is desirably the entire area of the substrate surface, but the present invention can be applied to only a part of the area, for example, only the area to be textured. Further, it is preferable to apply concentric texturing to the surface of the substrate or the surface of the substrate on which the nonmagnetic metal coating layer is formed. In the present invention, concentric texturing is, for example, mechanical texturing using loose abrasive grains and texture tape or texturing using a laser beam, or by using these together, by polishing in the circumferential direction. This refers to a state in which a large number of microgrooves are formed in the circumferential direction of the substrate.

【0013】機械的テキスチャリングを施すための遊離
砥粒の種類としてはダイアモンド砥粒、中でも表面がグ
ラファイト化処理されているものが最も好ましい。機械
的テキスチャリングに用いられる砥粒としては他にアル
ミナ砥粒が広く用いられているが、特にテキスチャリン
グ溝に沿って磁化容易軸を配向させるという観点から考
えるとダイアモンド砥粒が極めて良い性能を発揮する。
この原因については現在のところ明確にはなっていない
が、極めて再現性の良い結果が得られている。
[0013] As the type of free abrasive grains for mechanical texturing, diamond abrasive grains, particularly those whose surfaces are graphitized, are most preferred. Alumina abrasive grains are widely used as abrasive grains for mechanical texturing, but diamond abrasive grains have extremely good performance, especially from the viewpoint of orienting the axis of easy magnetization along the texturing grooves. Demonstrate.
Although the cause is not clear at present, extremely reproducible results have been obtained.

【0014】基板の表面は、表面粗さ(Ra)がどのよ
うな値をとっても本発明の効果には基本的には影響ない
が、ヘッド浮上量ができるだけ小さいことが高密度磁気
記録の実現には有効であり、またこれら基板の特徴のひ
とつが優れた表面平滑性にあることから、基板表面のR
aは2nm以下、さらには1nm以下であることが好ま
しく、中でも0.5nm以下であることが好ましい。た
だし、ここでRaの決定は、触針式表面粗さ計を用いて
測定した場合を想定している。このとき測定用の針の先
端は半径0.2μm程度の大きさのものが使用される。
The surface of the substrate does not basically affect the effect of the present invention no matter what value the surface roughness (Ra) takes, but the fact that the head flying height is as small as possible is necessary for realizing high density magnetic recording. Is effective, and one of the features of these substrates is excellent surface smoothness.
a is preferably 2 nm or less, more preferably 1 nm or less, and particularly preferably 0.5 nm or less. However, the determination of Ra here is based on the case where measurement is performed using a stylus type surface roughness meter. At this time, the tip of the measuring needle has a radius of about 0.2 μm.

【0015】次に非磁性基板上には、Crを主成分とす
る種子層とNiAl等のB2結晶構造を有する下地層を
順次形成した後、Co合金磁性層を形成する。さらに
は、この下地層と磁性層の間にCrを主成分とする第2
の下地層を形成するのが好ましい。本発明の特徴は非磁
性基板とB2結晶構造を有する下地層の間に、Crを主
成分とする種子層を設けることにある。その目的は、こ
の種子層の上に形成するB2結晶構造を有する下地層、
Crを主成分とする第2の下地層、ひいてはCo合金磁
性層の結晶面の配向を制御することにある。
Next, on the non-magnetic substrate, a seed layer mainly composed of Cr and an underlayer having a B2 crystal structure such as NiAl are sequentially formed, and then a Co alloy magnetic layer is formed. Further, a second layer mainly composed of Cr is provided between the underlayer and the magnetic layer.
It is preferable to form the underlayer. A feature of the present invention resides in that a seed layer containing Cr as a main component is provided between a nonmagnetic substrate and an underlayer having a B2 crystal structure. The purpose is to form an underlayer having a B2 crystal structure formed on the seed layer,
The purpose of the present invention is to control the orientation of the crystal plane of the second underlayer containing Cr as a main component, and thus the Co alloy magnetic layer.

【0016】B2結晶構造を有するものとしては、例え
ばCoAl、FeAl、NiAl、CoTi、FeTi
等の2元系合金や、FeCoAl、CoNiAl、Ni
FeAl、FeCoNiAl等の3元系合金が挙げられ
る。尚、本発明においてB2結晶構造は、結晶構造に関
する系統的分類上、L20 と記するものも含む。この層
の特徴はその粒径が小さく、また、これらの結晶格子定
数は約2.88Åであり、その上に形成されるCrを主
成分とする第2の下地層(結晶格子定数が2.88〜
3.00Å)やCo合金磁性層をエピタキシャル成長す
る際に、粒子の粒径が小さくなるので好ましい。しか
し、NiAl等のB2結晶構造を有する下地層を、種子
層を形成せずに直接に基板に設けた場合、下地層の主な
結晶面である(110)が基板面に対して約21°と傾
いて配向しているので、例えばその上にCrを主成分と
する第2の下地層を形成しても、主な結晶面Cr(11
0)が、エピタキシャルの成長により、基板面に対して
同様に約21°と傾いて強く配向してしまう。これに伴
って更に上に形成するCo合金磁性層のCo(10
0)、Co(101)結晶面も高い割合で基板面に対し
て傾くことになる。その結果、基板面に対して約20°
および約54°と傾く配向の磁化容易軸が高い割合で現
れてしまう。
As a material having a B2 crystal structure, for example, CoAl, FeAl, NiAl, CoTi, FeTi
Binary alloys such as FeCoAl, CoNiAl, Ni
Ternary alloys such as FeAl and FeCoNiAl are exemplified. Incidentally, B2 crystal structure in the present invention, the systematic classification relates to a crystalline structure, including those that serial and L2 0. The feature of this layer is that its grain size is small, its crystal lattice constant is about 2.88 °, and a second underlayer mainly composed of Cr (crystal lattice constant of 2. 88 ~
3.00%) or when a Co alloy magnetic layer is epitaxially grown, the particle size is preferably reduced. However, when an underlayer having a B2 crystal structure such as NiAl is directly provided on a substrate without forming a seed layer, (110) which is the main crystal plane of the underlayer is approximately 21 ° with respect to the substrate surface. For example, even if a second underlayer containing Cr as a main component is formed thereon, the main crystal plane Cr (11
0) is similarly strongly inclined at about 21 ° with respect to the substrate surface due to epitaxial growth. Accompanying this, Co (10
0) and the Co (101) crystal plane are also inclined at a high rate with respect to the substrate plane. As a result, about 20 ° to the substrate surface
In addition, an easy axis of magnetization having an inclination of about 54 ° appears at a high rate.

【0017】又、この下地層を前述したようなテキスチ
ャリングを施した基板上に直接形成し、その上にCo合
金磁性層を形成すると、すなわち本発明の構成のうち粒
子層を除いた層構成とすると、保磁力その他の静磁気特
性は優れた値を示すが、基板面内における磁気異方性は
ほとんど生じず、ほぼ面内等方媒体となってしまう。
Further, when this underlayer is formed directly on the substrate subjected to the texturing as described above, and a Co alloy magnetic layer is formed thereon, that is, the layer structure of the present invention except for the particle layer is eliminated. In this case, the coercive force and other magnetostatic characteristics show excellent values, but magnetic anisotropy in the substrate surface hardly occurs, and the medium becomes an almost in-plane isotropic medium.

【0018】このような、結晶面の傾斜配向問題等を、
基板と、B2結晶構造を有する下地層の間にCrを主成
分とする種子層を設けることにより改善したのである。
つまり、Crを主成分とする種子層の結晶面が基板面と
平行して配向するので、その上に形成されるB2結晶構
造を有する下地層は、エピタキシャル成長により、その
主な結晶面が基板面と平行して配向する。そして、下地
層上に形成する第2の下地層やCo合金磁性層において
も基板面と平行して配向する結晶面の割合が著しく高ま
り、磁化容易軸も基板面内の配向になるのである。加え
て、種子層はテキスチャリングの溝方向に沿って結晶配
向して、引き続いて形成される下地層の結晶成長をも制
御し、ひいてはCo合金磁性層の磁気特性の面内磁気を
発現させる効果を持つ。B2結晶構造を有する下地層と
しては前述の合金のうちCoAl、FeAl、NiA
l、FeCoAl、CoNiAl、NiFeAl、Fe
CoNiAl等のAl含有合金が好ましく、この中でも
Al含有率が30〜70原子%(at%)のものが好ま
しく、さらには40〜60at%、特に45〜55at
%のものが好ましい。また、B2結晶構造が各層の粒子
径の微細化に重要であるので、B2結晶構造が下地層に
おいて70%以上、中でも80%以上、特に90%(い
ずれも体積%)以上がB2結晶構造であるのが好まし
い。
[0018] Such a problem such as the tilt orientation of the crystal plane is considered as follows.
The improvement was achieved by providing a seed layer mainly composed of Cr between the substrate and the underlayer having the B2 crystal structure.
That is, since the crystal plane of the seed layer mainly composed of Cr is oriented in parallel with the substrate surface, the underlying layer having a B2 crystal structure formed thereon has a main crystal plane whose main crystal surface is formed by epitaxial growth. Orient in parallel. Then, also in the second underlayer and the Co alloy magnetic layer formed on the underlayer, the proportion of crystal planes oriented parallel to the substrate surface is significantly increased, and the axis of easy magnetization is also oriented in the substrate surface. In addition, the seed layer is crystallographically oriented along the direction of the texturing groove, thereby controlling the crystal growth of the subsequently formed underlayer, and consequently producing the in-plane magnetism of the magnetic properties of the Co alloy magnetic layer. have. As the underlayer having the B2 crystal structure, CoAl, FeAl, NiA
1, FeCoAl, CoNiAl, NiFeAl, Fe
Al-containing alloys such as CoNiAl are preferable, and among them, those having an Al content of 30 to 70 atomic% (at%) are preferable, and 40 to 60 at%, particularly 45 to 55 at%.
% Is preferred. In addition, since the B2 crystal structure is important for miniaturization of the particle diameter of each layer, the B2 crystal structure is 70% or more, particularly 80% or more, especially 90% (both volume%) or more in the underlayer. Preferably it is.

【0019】又、下地層には種子層等の隣接する層との
結晶格子定数のマッチング、耐酸化性、延展性等を改善
するために、前述の合金にRe、Nb、B、W、Mo、
Cr、V、Mn、Ta、Pd、Hf、等の元素を1種以
上添加してもよい。B2結晶構造を有する下地層の膜厚
は、磁気記録媒体へ要求される諸特性の条件等により適
宜に決定すればよいが、通常1〜1500nmであり、
中でも1〜60nm、特に1〜30nmが好ましい。
In order to improve the matching of the crystal lattice constant with the adjacent layer such as the seed layer, the oxidation resistance, the spreadability, etc., the underlayer is made of Re, Nb, B, W, and Mo. ,
One or more elements such as Cr, V, Mn, Ta, Pd, and Hf may be added. The thickness of the underlayer having the B2 crystal structure may be appropriately determined depending on conditions of various characteristics required for the magnetic recording medium, but is usually 1 to 1500 nm.
Among them, 1 to 60 nm, particularly 1 to 30 nm is preferable.

【0020】Crを主成分とする種子層の材料として
は、純Crの他、Co層との結晶マッチングなどの目的
でCrにV、Ti、Mo、Zr、Hf、Ta、W、G
e、Nb、Si、Cu、Bなどの第二、第三元素を添加
したものや、酸化Crなども含む。中でも純CrやT
i、Mo、W、V、Ta、Si、Nb、Zr及びHfを
有するものが好ましい。これら第二、第三元素の含有量
はそれぞれの元素によって最適な量が異なるが、一般に
は1原子%〜50原子%、好ましくは5原子%〜30原
子%、さらに好ましくは5原子%〜20原子%の範囲で
ある。
As a material for the seed layer containing Cr as a main component, in addition to pure Cr, V, Ti, Mo, Zr, Hf, Ta, W, and G are used for the purpose of crystal matching with the Co layer.
e, Nb, Si, Cu, B and the like to which second and third elements are added, and Cr oxide are also included. Above all, pure Cr and T
Those having i, Mo, W, V, Ta, Si, Nb, Zr and Hf are preferable. The content of the second and third elements varies depending on the respective elements, but is generally 1 atomic% to 50 atomic%, preferably 5 atomic% to 30 atomic%, more preferably 5 atomic% to 20 atomic%. Atomic% range.

【0021】Crを主成分とする種子層の膜厚はこの異
方性を発現させ得るに十分なものであればよく、0.1
〜50nmであり、好ましくは0.3〜30nm、さら
に好ましくは0.5〜10nmである。Crを主成分と
する金属膜の成膜時は基板加熱を行っても行わなくても
よい。Co合金磁性層としては、通常、純CoやCoN
i、CoSm、CoCrTa、CoNiCr、CoCr
Ptなどの磁性材料として一般に用いられるCo合金磁
性材料を用いる。これらのCo合金に更にNi、Cr、
Pt、Ta、W、Bなどの元素やSiO2 等の化合物を
加えたものでも良い。例えばCoCrPtTa、CoC
rPtB、CoNiPt、CoNiCrPtB等が挙げ
られる。Co合金磁性層の膜厚は任意であるが、通常5
〜50nm、好ましくは10〜30nmである。
The film thickness of the seed layer containing Cr as a main component may be sufficient as long as it can express this anisotropy.
To 50 nm, preferably 0.3 to 30 nm, and more preferably 0.5 to 10 nm. Substrate heating may or may not be performed when forming a metal film containing Cr as a main component. The Co alloy magnetic layer is usually made of pure Co or CoN.
i, CoSm, CoCrTa, CoNiCr, CoCr
A Co alloy magnetic material generally used as a magnetic material such as Pt is used. In addition to these Co alloys, Ni, Cr,
An element such as Pt, Ta, W, B or a compound such as SiO 2 may be added. For example, CoCrPtTa, CoC
rPtB, CoNiPt, CoNiCrPtB and the like. The thickness of the Co alloy magnetic layer is arbitrary, but usually 5
5050 nm, preferably 10-30 nm.

【0022】さらには、B2結晶構造を有する下地層と
Co合金磁性層との間に、さらにCrを主成分とする第
二の下地層を設けるのが好ましい。この第二の下地層
は、Crを主成分とする種子層と同様の材料を用いるこ
とができ、両者の元素組成は同一であっても異っていて
もよい。第二の下地層の膜厚は目的とする磁気記録媒体
の諸特性にあわせて任意に設定できるが、通常1〜10
0nm、好ましくは5〜50nmである。
Furthermore, it is preferable to further provide a second underlayer mainly composed of Cr between the underlayer having the B2 crystal structure and the Co alloy magnetic layer. This second underlayer can be made of the same material as the seed layer containing Cr as a main component, and the element composition of both may be the same or different. The thickness of the second underlayer can be arbitrarily set in accordance with the desired characteristics of the magnetic recording medium.
0 nm, preferably 5 to 50 nm.

【0023】一般的には磁性層上には、任意の保護層を
形成し、次いで潤滑層を形成する。保護層としては、
C、水素化C、窒素化C、アルモファスC、SiC等の
炭素質層やSiO2 、Zr2 3 、TiNなど、通常用
いられる保護層材料を用いることができる。また、保護
層が2層以上の層から構成されていてもよい。保護層の
膜厚は1〜50nm、特に5〜30nmが好ましい。潤
滑層に用いる潤滑剤としては、フッ素系潤滑剤、炭化水
素系潤滑剤及びこれらの混合物等が挙げられ、通常1〜
4nmの厚さで潤滑層を形成する。
Generally, an optional protective layer is formed on the magnetic layer, and then a lubricating layer is formed. As the protective layer,
Commonly used protective layer materials such as carbonaceous layers such as C, hydrogenated C, nitrogenated C, Amorphous C, and SiC, and SiO 2 , Zr 2 O 3 , and TiN can be used. Further, the protective layer may be composed of two or more layers. The thickness of the protective layer is preferably 1 to 50 nm, particularly preferably 5 to 30 nm. Examples of the lubricant used for the lubricating layer include a fluorine-based lubricant, a hydrocarbon-based lubricant, a mixture thereof, and the like.
A lubricating layer is formed with a thickness of 4 nm.

【0024】なお本発明の磁気記録媒体においてはさら
に、磁性層を2種以上の積層構造としたもの、Crを主
成分とする第2の下地層と磁性層との間に非磁性CoC
r等の中間層を設けてもよい。磁気記録媒体の各層を形
成する成膜方法としては任意であるが、例えば直流(マ
グネトロン)スパッタリング法、高周波(マグネトロ
ン)スパッタリング法、ECRスパッタリング法、真空
蒸着法などの物理的蒸着法が挙げられる。
The magnetic recording medium of the present invention further comprises a magnetic layer having a laminated structure of two or more kinds, and a non-magnetic CoC between a second underlayer mainly composed of Cr and the magnetic layer.
An intermediate layer such as r may be provided. The method for forming each layer of the magnetic recording medium is arbitrary, and examples thereof include physical vapor deposition methods such as direct current (magnetron) sputtering, high frequency (magnetron) sputtering, ECR sputtering, and vacuum deposition.

【0025】又、成膜時の条件としても特に制限はな
く、到達真空度、基板加熱の方式と基板温度、スパッタ
リングガス圧、バイアス電圧等は、成膜装置により適宜
決定すればよい。例えば、スパッタリング成膜では、通
常の場合、到達真空度は1×10-6Torr以下、基板
温度は室温〜400℃、スパッタリングガス圧は1×1
-3〜20×10-3Torr、バイアス電圧は一般的に
は0〜−500Vである。成膜に当たっては、磁性層の
Crの偏析を促進するために、一般に非磁性基板を10
0〜350℃程度に加熱することが好ましい。基板加熱
は、下地層形成前に行っても良いし、熱吸収率が低い透
明な基板を使用する場合には、熱吸収率を高くするた
め、Crを主成分とする種子層又はB2結晶構造を有す
る下地層を形成してから基板を加熱し、しかる後にCo
合金磁性層や又はCrを主成分とする第2の下地層を形
成しても良い。
There are no particular restrictions on the conditions at the time of film formation, and the ultimate vacuum, substrate heating method and substrate temperature, sputtering gas pressure, bias voltage, etc. may be appropriately determined by the film forming apparatus. For example, in the case of sputtering film formation, usually, the ultimate vacuum degree is 1 × 10 −6 Torr or less, the substrate temperature is from room temperature to 400 ° C., and the sputtering gas pressure is 1 × 1.
0 −3 to 20 × 10 −3 Torr, and the bias voltage is generally 0 to −500V. In forming the film, a nonmagnetic substrate is generally used to promote the segregation of Cr in the magnetic layer.
It is preferable to heat to about 0 to 350 ° C. Substrate heating may be performed before the formation of the underlayer, or when a transparent substrate having a low heat absorption is used, in order to increase the heat absorption, a seed layer containing Cr as a main component or a B2 crystal structure is used. Is formed, and then the substrate is heated.
An alloy magnetic layer or a second underlayer containing Cr as a main component may be formed.

【0026】本発明の磁気記録装置は、少なくとも上述
してきた磁気記録媒体と、これを記録方向に駆動する駆
動部と、記録部と再生部からなる磁気ヘッドと、磁気ヘ
ッドを磁気記録媒体に対して相対運動させる手段と、磁
気ヘッドへの信号入力と磁気ヘッドからの出力信号再生
を行うための記録再生信号処理手段を有する磁気記憶装
置である。上述の磁気ヘッドの再生部をMRヘッドで構成
することにより、高記録密度においても十分な信号強度
を得ることができ、1平方インチ当たり2ガビット以上
の高記録密度を持った磁気記憶装置を実現することがで
きる。またこの磁気ヘッドを、浮上量が0.01μm 以
上、0.05μm 未満と、従来より低い高さで浮上させ
ると、出力が向上して高い装置S/Nが得られ、大容量
で高信頼性の磁気記憶装置を提供することができる。ま
た、最尤復号法による信号処理回路を組み合わせるとさ
らに記録密度を向上でき、例えば、トラック密度10k
TPI以上、線記録密度200kFCI以上、1平方インチ
当たり2G ビット以上の記録密度で記録・再生する場合
にも十分なS/Nが得られる。
A magnetic recording apparatus according to the present invention comprises at least the magnetic recording medium described above, a driving unit for driving the magnetic recording medium in a recording direction, a magnetic head including a recording unit and a reproducing unit, and And a recording / reproducing signal processing means for performing signal input to the magnetic head and reproduction of an output signal from the magnetic head. By constructing the reproducing section of the above magnetic head with an MR head, it is possible to obtain sufficient signal strength even at high recording densities and realize a magnetic storage device with a high recording density of 2 gigabits per square inch or more. can do. If the magnetic head is levitated at a height of 0.01 μm or more and less than 0.05 μm, which is lower than the conventional height, the output is improved and a high S / N ratio can be obtained. Can be provided. The recording density can be further improved by combining a signal processing circuit based on the maximum likelihood decoding method.
A sufficient S / N can be obtained even when recording / reproducing at a recording density of TPI or more and a linear recording density of 200 kFCI or more and 2 Gbits / square inch or more.

【0027】さらに磁気ヘッドの再生部を、互いの磁化
方向が外部磁界によって相対的に変化することによって
大きな抵抗変化を生じる複数の導電性磁性層と、その導
電性磁性層の間に配置された導電性非磁性層からなるGM
R ヘッド、あるいはスピン・バルブ効果を利用したGMR
ヘッドとすることにより、信号強度をさらに高めること
ができ、1平方インチ当たり3ギガビット以上、240
kFCI 以上の線記録密度を持った信頼性の高い磁気記憶
装置の実現が可能となる。
Further, the reproducing portion of the magnetic head is disposed between a plurality of conductive magnetic layers which generate a large resistance change due to a relative change in their magnetization directions due to an external magnetic field, and the conductive magnetic layers. GM consisting of conductive non-magnetic layer
GMR using R head or spin valve effect
By using a head, the signal strength can be further increased, and more than 3 gigabits per square inch,
A highly reliable magnetic storage device having a linear recording density of kFCI or more can be realized.

【0028】[0028]

【実施例】以下に実施例及び比較例を挙げて本発明をよ
り具体的に説明するが、本発明はその要旨を超えない限
り、以下の実施例に限定されるものではない。NiPめ
っきを施したAl−Mg合金基板(半径95mm)に同
心状の機械式テキスチャリングを施し、この上に直流ス
パッタリング法を用いて膜を形成した。このとき機械式
テキスチャリング加工後の基板表面粗さはRa〜5nm
とした。
The present invention will be described more specifically with reference to examples and comparative examples, but the present invention is not limited to the following examples unless it exceeds the gist. Concentric mechanical texturing was performed on an Al—Mg alloy substrate (radius 95 mm) on which NiP plating had been performed, and a film was formed thereon using a DC sputtering method. At this time, the substrate surface roughness after mechanical texturing is Ra to 5 nm.
And

【0029】比較例として基板上にNiAl層、Co−
15Cr−2Ta−1W−6Pt(原子%)合金層、C
層の順に成膜を行ったものを作成した。基板温度は25
0℃とし、Co−15Cr−2Ta−1W−6Pt成膜
時には基板に対し−200Vの基板バイアス電圧を印加
した。また、Co−15Cr−2Ta−1W−6Pt膜
厚を17.5nmとした。NiAl層の膜厚は50nm
とし、成膜時には直流の基板バイアス電位を与えた。こ
のときの印加電圧を0、−100、−200、−300
Vと変化させ、これらをそれぞれ比較例1〜4とする。
As a comparative example, a NiAl layer and a Co-
15Cr-2Ta-1W-6Pt (atomic%) alloy layer, C
Films were formed in the order of layers. Substrate temperature is 25
At 0 ° C., a substrate bias voltage of −200 V was applied to the substrate during the formation of Co-15Cr-2Ta-1W-6Pt. The Co-15Cr-2Ta-1W-6Pt film thickness was 17.5 nm. The thickness of the NiAl layer is 50 nm
During the film formation, a DC substrate bias potential was applied. The applied voltage at this time is 0, -100, -200, -300
V, and these are referred to as Comparative Examples 1 to 4, respectively.

【0030】一方、比較例1〜4と同じ基板、成膜装置
を用いて、Cr層、NiAl層、Co−15Cr−2T
a−1W−6Pt(原子%)合金層、C層の順に成膜を
行ったものを作成した。このときCr層の膜厚はすべて
10nmにそろえた。また、Co−15Cr−2Ta−
1W−6Pt膜厚を17.5nm、NiAl層の膜厚を
50nmに統一した。さらにCo−15Cr−2Ta−
1W−6Pt合金層およびNiAl層成膜時に基板に直
流のバイアス電位を与えた。この時の電圧値を0V、−
100V、−200V、−300Vと変化させ、それぞ
れを実施例1〜4とする。
On the other hand, using the same substrate and film forming apparatus as in Comparative Examples 1 to 4, a Cr layer, a NiAl layer, a Co-15Cr-2T
An a-1W-6Pt (atomic%) alloy layer and a C layer were sequentially formed to form a film. At this time, the thicknesses of the Cr layers were all set to 10 nm. In addition, Co-15Cr-2Ta-
The thickness of the 1W-6Pt film was 17.5 nm, and the thickness of the NiAl layer was 50 nm. Further, Co-15Cr-2Ta-
A DC bias potential was applied to the substrate when forming the 1W-6Pt alloy layer and the NiAl layer. The voltage value at this time is 0 V,-
The voltage was changed to 100 V, -200 V, and -300 V, and the respective values were used as Examples 1 to 4.

【0031】こうして作成された磁気記録媒体の静磁気
特性を以下の表1に示す。ここで、Br*tとは媒体の
残留磁束密度Brと磁性膜厚との積であり、媒体単位面
積当たりの残留磁束量を示す。Hcは媒体の半径30m
mにおける媒体面円周方向に測定したときの面内保磁力
である。また、SQは飽和磁化量σsと残留磁化量σr
との比でありSQ=σr/σsである。S*はdσ/d
H=σr/{Hc(1−S*)}で定義される量で保磁
力角型比と呼ばれるものである。ORは媒体面内の保磁
力比を表すもので、媒体円周方向の保磁力をHcci
r、媒体径方向の保磁力をHcradとするときOR=
Hccir/Hcradで定義される。一般にORが大
きいほど磁気ディスクの記録再生特性に優れていると考
えられる。
Table 1 below shows the magnetostatic characteristics of the magnetic recording medium thus prepared. Here, Br * t is the product of the residual magnetic flux density Br of the medium and the magnetic film thickness, and indicates the amount of residual magnetic flux per unit area of the medium. Hc is the radius of the medium 30 m
m is the in-plane coercive force measured in the circumferential direction of the medium surface at m. SQ is the saturation magnetization σs and the residual magnetization σr
SQ = σr / σs. S * is dσ / d
H = [sigma] r / {Hc (1-S *)}, which is called a coercive force squareness ratio. OR represents the coercivity ratio in the medium plane, and the coercivity in the circumferential direction of the medium is Hcci.
r, when the coercive force in the radial direction of the medium is Hcrad, OR =
Defined as Hccir / Hcrad. Generally, it is considered that the larger the OR, the better the recording / reproducing characteristics of the magnetic disk.

【0032】[0032]

【表1】 [Table 1]

【0033】比較例1〜4と実施例1〜4とを比べる
と、比較例のORがすべてが媒体面内で等方的な磁気特
性を持っているのに対し、実施例ではいずれも機械式テ
キスチャリングの溝方向に沿って磁化容易軸が配向して
いることがわかる。また、これに伴って、角型非SQも
実施例の方が約0.1程度高くなっている。これらはい
ずれも磁気記録媒体の記録再生特性を支配する要素であ
り、媒体最下層に形成したCr種子層を施した本発明に
よる媒体の方が優れた特性を示した。
When the comparative examples 1 to 4 are compared with the examples 1 to 4, all of the ORs of the comparative examples have isotropic magnetic characteristics in the medium plane, whereas all of the ORs of the comparative examples have mechanical characteristics. It can be seen that the easy axis of magnetization is oriented along the groove direction of the formula texturing. Accordingly, the square non-SQ is also higher by about 0.1 in the embodiment. These are all factors that control the recording / reproducing characteristics of the magnetic recording medium, and the medium according to the present invention provided with the Cr seed layer formed on the lowermost layer of the medium showed superior characteristics.

【0034】実施例5 基板表面粗さをRa〜1.2nmとした以外は実施例1
〜4と同様の基板を作成した。この非磁性基板を直流マ
グネトロンスパッタ装置の前室に装着して排気し、同時
に220℃まで加熱し、真空圧が7×10-5Torr以
下に到達した後、真空圧が7×10-7Torr以下の高
真空成膜室に導入して、種子層であるCr層5nm、5
0Co−25AlのCoAl合金下地層60nmを成膜
し、その後、基板温度を270℃まで昇温し、その上に
Cr下地層(第2の下地層)を30nm成膜した。
Example 5 Example 1 except that the substrate surface roughness was changed to Ra to 1.2 nm.
Substrates similar to those in Nos. To 4 were prepared. This non-magnetic substrate is mounted in a front chamber of a DC magnetron sputtering apparatus, and evacuated. Simultaneously, the substrate is heated to 220 ° C., and after the vacuum pressure reaches 7 × 10 −5 Torr or less, the vacuum pressure is reduced to 7 × 10 −7 Torr. It was introduced into the following high vacuum film formation chamber, and a 5 nm thick Cr layer
A 60 nm CoAl alloy underlayer of 0Co-25Al was formed, and then the substrate temperature was increased to 270 ° C., and a 30 nm Cr underlayer (second underlayer) was formed thereon.

【0035】そして引き続き、基板に−200Vのバイ
アス電圧を印加して、76Co−15Cr−6Pt−2
Ta−1WのCoCrPtTaW(以下、Co合金と略
して記す。)磁性層を20nm成膜することにより、磁
気記録媒体を作成した。この磁気記録媒体から面積2c
m×2cmの試料を切り出し、X線の回折の解析を行っ
た。結果を図1を用いて説明する。X線回折の解析は、
通常のθ―2θ回折、および基板面に対する入射角度が
1°の低角入射回折の両方を行った。この解析では、基
板面と平行して配向する結晶面がθ―2θのX線回折に
より検出され、基板面に対して傾く結晶面が低角入射の
X線回折により検出される。
Subsequently, a bias voltage of -200 V is applied to the substrate to obtain 76Co-15Cr-6Pt-2.
A magnetic recording medium was formed by depositing a Ta-1W CoCrPtTaW (hereinafter abbreviated as Co alloy) magnetic layer to a thickness of 20 nm. From this magnetic recording medium, the area 2c
An mx 2 cm sample was cut out and analyzed for X-ray diffraction. The results will be described with reference to FIG. X-ray diffraction analysis
Both ordinary θ-2θ diffraction and low-angle incident diffraction at an incident angle of 1 ° with respect to the substrate surface were performed. In this analysis, a crystal plane oriented parallel to the substrate surface is detected by θ-2θ X-ray diffraction, and a crystal surface inclined with respect to the substrate surface is detected by low-angle incident X-ray diffraction.

【0036】図1aはθ―2θのX線回折のスペクト
ル、図1bは低角入射のX線回折のスペクトルを示して
いる。図1aでは、AlーMg合金基板のAl成分に起
因する回折ピーク以外に、基板面と平行するCoAl
(100)、CoAl(200)、Cr(200)、C
o合金(110)(図面ではCo(110)と記す。以
下同様。)結晶面の配向が非常に強いことが分かる。一
方、図1bでは、基板表面のNiPメッキ層に由来する
バックグランドのプロファイル以外に、基板面に対いて
傾く配向の幾つかの結晶面が僅かに検出されているにす
ぎず、この二つのX線回折スペクトルから、磁性層の磁
化容易軸の大部分が基板面内に配向していることが分か
る。これにより、高記録密度、S/N比の向上が実現で
きる。
FIG. 1A shows a spectrum of X-ray diffraction at θ-2θ, and FIG. 1B shows a spectrum of X-ray diffraction at low angle incidence. In FIG. 1a, in addition to the diffraction peak caused by the Al component of the Al—Mg alloy substrate, CoAl
(100), CoAl (200), Cr (200), C
o alloy (110) (referred to as Co (110) in the drawings, and the same applies hereinafter). It can be seen that the orientation of the crystal plane is very strong. On the other hand, in FIG. 1b, in addition to the background profile derived from the NiP plating layer on the substrate surface, only a few crystal planes having an orientation inclined with respect to the substrate surface are slightly detected. From the line diffraction spectrum, it can be seen that most of the easy axis of the magnetic layer is oriented in the substrate plane. Thereby, high recording density and improvement of the S / N ratio can be realized.

【0037】比較例5 種子層であるCr層を設けない以外は、実施例5と同様
に磁気記録媒体を作成し、X線回折の試料を切り出して
X線回折の解析を行った。結果を図2を用いて説明す
る。図2aはθ―2θのX線回折のスペクトル、図2b
は低角入射のX線回折のスペクトルを示している。図2
aでは、基板面と平行して配向するCo(100)結晶
面が微弱に検出されている。更に詳しい解析を行ったと
ころ、基板面と平行して配向するCoAl(110)、
Cr(110)結晶面が僅かしかされない。一方、図2
bでは、基板面に対して約21°と傾くCoAl(11
0)、Cr(110)結晶面が非常に強く配向してい
る。これに対応して、基板面に対してそれぞれ約19.
5°、約22.4°と傾いて配向するCo(100)、
Co(101)結晶面も強く配向している。この二つの
X線回折スペクトルから、磁性層の磁化容易軸の多くが
基板面に対して約20°および約54°と傾いているこ
とが分かる。
Comparative Example 5 A magnetic recording medium was prepared in the same manner as in Example 5 except that the Cr layer as a seed layer was not provided, and an X-ray diffraction sample was cut out and analyzed for X-ray diffraction. The result will be described with reference to FIG. FIG. 2a is a spectrum of X-ray diffraction of θ−2θ, FIG.
Shows the spectrum of X-ray diffraction at low angle incidence. FIG.
In a, the Co (100) crystal plane oriented parallel to the substrate surface is weakly detected. Further analysis revealed that CoAl (110) oriented parallel to the substrate surface,
Only a few Cr (110) crystal planes are formed. On the other hand, FIG.
b, CoAl (11) inclined at about 21 ° with respect to the substrate surface.
0), Cr (110) crystal plane is very strongly oriented. Correspondingly, about 19.
Co (100) which is oriented at an inclination of 5 ° and about 22.4 °,
The Co (101) crystal plane is also strongly oriented. From these two X-ray diffraction spectra, it can be seen that many of the easy axes of magnetization of the magnetic layer are inclined at about 20 ° and about 54 ° with respect to the substrate surface.

【0038】[0038]

【発明の効果】本発明によれば、従来の構成の磁気記録
媒体に比べて、基板面内およびディスク円周方向へ配向
した磁化容易軸の割合が著しく向上し、且つ微細粒径の
磁気記録媒体が提供される。
According to the present invention, the ratio of the axis of easy magnetization oriented in the plane of the substrate and in the circumferential direction of the disk is remarkably improved as compared with the conventional magnetic recording medium, and the magnetic recording medium having a fine grain size is obtained. A medium is provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施例5の(a)θ―2θのX線回折のスペク
トル、および(b)低角入射のX線回折のスペクトル
FIG. 1 shows (a) an X-ray diffraction spectrum of θ-2θ and (b) a low-angle incident X-ray diffraction spectrum of Example 5.

【図2】比較例5の(a)θ―2θのX線回折のスペク
トル、および(b)低角入射のX線回折のスペクトル
FIG. 2 shows (a) an X-ray diffraction spectrum of θ-2θ and (b) a low-angle incident X-ray diffraction spectrum of Comparative Example 5.

Claims (11)

【特許請求の範囲】[Claims] 【請求項1】 非磁性基板上に、少なくともB2結晶構
造を有する下地層、およびCo合金磁性層を順次積層し
た磁気記録媒体であって、非磁性基板とB2結晶構造を
有する下地層との間にCrを主成分とする種子層を有す
ることを特徴とする磁気記録媒体。
1. A magnetic recording medium comprising: a base layer having at least a B2 crystal structure and a Co alloy magnetic layer sequentially laminated on a nonmagnetic substrate, wherein a magnetic recording medium is provided between the nonmagnetic substrate and the base layer having a B2 crystal structure. A magnetic recording medium comprising a seed layer mainly composed of Cr.
【請求項2】 B2結晶構造を有する下地層とCo合金
磁性層の間に、さらにCrを主成分とする第2の下地層
を有することを特徴とする請求項1に記載の磁気記録媒
体。
2. The magnetic recording medium according to claim 1, further comprising a second underlayer containing Cr as a main component between the underlayer having the B2 crystal structure and the Co alloy magnetic layer.
【請求項3】 B2結晶構造を有する下地層が、CoA
l、FeAl、NiAl、CoTi、FeCoAl、C
oNiAl、NiFeAl、FeCoNiAlからなる
群より選ばれる合金層からなることを特徴とする請求項
1または2に記載の磁気記録媒体。
3. An underlayer having a B2 crystal structure is made of CoA.
1, FeAl, NiAl, CoTi, FeCoAl, C
3. The magnetic recording medium according to claim 1, comprising an alloy layer selected from the group consisting of oNiAl, NiFeAl, and FeCoNiAl.
【請求項4】 Crを主成分とする種子層が、Crまた
はCr−X系合金層(XはTi、Mo、W、V、Ta、
Si、Nb、Zr、Hf及びBからなる群より選ばれる
1種又は2種以上の元素)からなることを特徴とする請
求項1乃至3に記載の磁気記録媒体。
4. A seed layer containing Cr as a main component is formed of a Cr or Cr—X alloy layer (X is Ti, Mo, W, V, Ta,
4. The magnetic recording medium according to claim 1, comprising one or more elements selected from the group consisting of Si, Nb, Zr, Hf and B).
【請求項5】 Crを主成分とする第2の下地層が、C
rまたはCr−X系合金膜(XはTi、Mo、W、V、
Ta、Si、Nb、Zr、Hf及びBからなる群より選
ばれる1種又は2種以上の元素)からなることを特徴と
する請求項2乃至4に記載の磁気記録媒体。
5. The method according to claim 1, wherein the second underlayer mainly composed of Cr is C
r or Cr-X based alloy film (X is Ti, Mo, W, V,
The magnetic recording medium according to claim 2, wherein the magnetic recording medium comprises one or more elements selected from the group consisting of Ta, Si, Nb, Zr, Hf, and B).
【請求項6】 B2結晶構造を有する下地層の70%以
上がB2結晶構造であることを特徴とする請求項1乃至
5に記載の磁気記録媒体。
6. The magnetic recording medium according to claim 1, wherein 70% or more of the underlayer having a B2 crystal structure has a B2 crystal structure.
【請求項7】 非磁性基板が、非磁性被覆層を有する非
磁性基板であることを特徴とする請求項1乃至6に記載
の磁気記録媒体。
7. The magnetic recording medium according to claim 1, wherein the non-magnetic substrate is a non-magnetic substrate having a non-magnetic coating layer.
【請求項8】 非磁性基板が表面に同心状テキスチャリ
ングを施したものであることを特徴とする請求項1乃至
7に記載の磁気記録媒体。
8. The magnetic recording medium according to claim 1, wherein the non-magnetic substrate has a surface subjected to concentric texturing.
【請求項9】 非磁性基板がガラス製基板であることを
特徴とする請求項1乃至8に記載の磁気記録媒体。
9. The magnetic recording medium according to claim 1, wherein the nonmagnetic substrate is a glass substrate.
【請求項10】 磁気ディスクであることを特徴とする
請求項1乃至9に記載の磁気記録媒体。
10. The magnetic recording medium according to claim 1, wherein the medium is a magnetic disk.
【請求項11】 磁気記録媒体と、磁気記録媒体を記録
方向に駆動する駆動部と、記録部と再生部からなる磁気
ヘッドと、磁気ヘッドを磁気記録媒体に対して相対運動
させる手段と、磁気ヘッドへの記録信号入力と磁気ヘッ
ドからの再生信号出力を行うための記録再生信号処理手
段を有する磁気記憶装置において、磁気記録媒体が請求
項1乃至10に記載の磁気記録媒体であることを特徴と
する磁気記録装置。
11. A magnetic recording medium, a driving unit for driving the magnetic recording medium in a recording direction, a magnetic head including a recording unit and a reproducing unit, means for moving the magnetic head relative to the magnetic recording medium, 11. A magnetic storage device having a recording / reproduction signal processing means for inputting a recording signal to a head and outputting a reproduction signal from a magnetic head, wherein the magnetic recording medium is the magnetic recording medium according to claim 1. Magnetic recording device.
JP32473198A 1997-11-19 1998-11-16 Magnetic recording medium and magnetic recording device Pending JPH11219511A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32473198A JPH11219511A (en) 1997-11-19 1998-11-16 Magnetic recording medium and magnetic recording device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-318089 1997-11-19
JP31808997 1997-11-19
JP32473198A JPH11219511A (en) 1997-11-19 1998-11-16 Magnetic recording medium and magnetic recording device

Publications (1)

Publication Number Publication Date
JPH11219511A true JPH11219511A (en) 1999-08-10

Family

ID=26569244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32473198A Pending JPH11219511A (en) 1997-11-19 1998-11-16 Magnetic recording medium and magnetic recording device

Country Status (1)

Country Link
JP (1) JPH11219511A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1154410A4 (en) * 1999-09-01 2002-11-20 Mitsubishi Chem Corp MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING DEVICE
KR100417276B1 (en) * 2000-02-09 2004-02-05 인터내셔널 비지네스 머신즈 코포레이션 Nonmetallic thin film magnetic recording disk with pre-seed layer
US6689496B1 (en) 2000-04-07 2004-02-10 Fujitsu Limited Magnetic recording medium, method of producing magnetic recording medium, and magnetic storage apparatus
US6833175B2 (en) 2001-08-23 2004-12-21 Fujitsu Limited Glass substrate for magnetic recording medium, and magnetic recording medium
US6905781B2 (en) 2000-11-29 2005-06-14 Fujitsu Limited Magnetic recording medium with Cr<110> preferred growth along a predetermined direction, method of producing the same and magnetic storage apparatus
US7169487B2 (en) 2001-12-14 2007-01-30 Hoya Corporation Magnetic recording medium
JPWO2022210903A1 (en) * 2021-03-31 2022-10-06

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1154410A4 (en) * 1999-09-01 2002-11-20 Mitsubishi Chem Corp MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING DEVICE
US6607848B1 (en) 1999-09-01 2003-08-19 Showa Denko K.K. Magnetic recording medium and magnetic recording device
KR100417276B1 (en) * 2000-02-09 2004-02-05 인터내셔널 비지네스 머신즈 코포레이션 Nonmetallic thin film magnetic recording disk with pre-seed layer
US6689496B1 (en) 2000-04-07 2004-02-10 Fujitsu Limited Magnetic recording medium, method of producing magnetic recording medium, and magnetic storage apparatus
US6905781B2 (en) 2000-11-29 2005-06-14 Fujitsu Limited Magnetic recording medium with Cr<110> preferred growth along a predetermined direction, method of producing the same and magnetic storage apparatus
US7115330B2 (en) 2000-11-29 2006-10-03 Fujitsu Limited Magnetic recording medium with CR <110> preferred growth along a predetermined direction, method of producing the same and magnetic storage apparatus
KR100714254B1 (en) * 2000-11-29 2007-05-02 후지쯔 가부시끼가이샤 Magnetic recording medium, method of manufacturing same and magnetic storage device
US6833175B2 (en) 2001-08-23 2004-12-21 Fujitsu Limited Glass substrate for magnetic recording medium, and magnetic recording medium
US7169487B2 (en) 2001-12-14 2007-01-30 Hoya Corporation Magnetic recording medium
JPWO2022210903A1 (en) * 2021-03-31 2022-10-06
WO2022210903A1 (en) * 2021-03-31 2022-10-06 ソニーグループ株式会社 Magnetic recording medium and cartridge

Similar Documents

Publication Publication Date Title
JP3143611B2 (en) Ultrathin nucleation layer for magnetic thin film media and method of making the layer
US5605733A (en) Magnetic recording medium, method for its production, and system for its use
US7235314B2 (en) Inter layers for perpendicular recording media
US5879783A (en) Low noise magnetic recording medium and method of manufacturing
US6586116B1 (en) Nonmetallic thin film magnetic recording disk with pre-seed layer
EP0531035B1 (en) Magnetic recording medium
JPWO2007129687A1 (en) Magnetic recording medium, manufacturing method thereof, and magnetic recording / reproducing apparatus
US5866227A (en) Magnetic recording medium with partially oxidized seed layer
JP3298893B2 (en) Bicrystalline cluster magnetic recording media
US6156422A (en) High density magnetic recording medium with high Hr and low Mrt
JPH11219511A (en) Magnetic recording medium and magnetic recording device
JP2004213869A (en) Perpendicular magnetic recording medium and manufacturing method thereof
JP2006155865A (en) Perpendicular magnetic recording medium and perpendicular magnetic recording / reproducing apparatus
JP3359706B2 (en) Magnetic recording media
US7026010B1 (en) Coupling enhancement for medium with anti-ferromagnetic coupling
US7419730B2 (en) Magnetic recording disk with antiferromagnetically coupled master layer including copper
JPH10149526A (en) Magnetic recording media
JP2002324313A (en) Manufacturing method of magnetic recording medium
JPH09265619A (en) Magnetic recording medium, method of manufacturing the same, and magnetic storage device
US6607848B1 (en) Magnetic recording medium and magnetic recording device
JP2009064501A (en) Magnetic recording medium and magnetic recording and playback apparatus
US20080166597A1 (en) Magnetic Recording Medium, Production Process Thereof, and Magnetic Recording and Reproducing Apparatus
JP2749046B2 (en) Magnetic recording medium for longitudinal recording and magnetic recording apparatus for longitudinal recording using the same
JP2000123345A (en) Magnetic recording medium and magnetic disk drive
JP2001250223A (en) Magnetic recording medium and magnetic recording device