JPH11205074A - Piezoelectric thin film vibrator - Google Patents
Piezoelectric thin film vibratorInfo
- Publication number
- JPH11205074A JPH11205074A JP10021395A JP2139598A JPH11205074A JP H11205074 A JPH11205074 A JP H11205074A JP 10021395 A JP10021395 A JP 10021395A JP 2139598 A JP2139598 A JP 2139598A JP H11205074 A JPH11205074 A JP H11205074A
- Authority
- JP
- Japan
- Prior art keywords
- electrode portion
- electrode pad
- electrode
- conductor
- piezoelectric thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 64
- 239000004020 conductor Substances 0.000 claims abstract description 129
- 238000000605 extraction Methods 0.000 claims abstract description 60
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 230000006866 deterioration Effects 0.000 abstract description 9
- 239000003990 capacitor Substances 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000002542 deteriorative effect Effects 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
(57)【要約】
【課題】 圧電薄膜振動子の周波数特性の悪化を防止す
る。
【解決手段】 基板のダイヤフラム上に絶縁部材と下部
電極部と圧電薄膜部材と上部電極部とを順に積層して振
動素子を形成し、下部電極部と上部電極部にそれぞれ引
き出し電極部7,8を接続し、各引き出し電極部7,8
をそれぞれ別個の電極パッド10に接続する。引き出し
電極部7(8)から電極パッド形成領域D内に延長形成
された延長導体部16と、延長導体部16の形成部分を
除く電極パッド形成領域D内に互いに間隙を介して点在
配置される複数の微小導体ランド17とにより電極パッ
ド10を構成する。何れの周波数の電流通電時にも、電
流の多くは電極パッド10から引き出し電極部と振動素
子を通るメイン経路を通って流れ、他の部分には殆ど流
れないので、圧電薄膜振動子の周波数特性の悪化を防止
することができる。
(57) [Problem] To prevent deterioration of frequency characteristics of a piezoelectric thin film vibrator. SOLUTION: An insulating member, a lower electrode portion, a piezoelectric thin film member, and an upper electrode portion are sequentially laminated on a diaphragm of a substrate to form a vibration element, and lead electrode portions 7, 8 are respectively provided on the lower electrode portion and the upper electrode portion. Are connected to each other, and
Are connected to separate electrode pads 10, respectively. The extension conductor 16 extending from the lead-out electrode portion 7 (8) into the electrode pad formation region D, and the extension conductor 16 which is scattered and arranged with a gap therebetween in the electrode pad formation region D excluding the portion where the extension conductor 16 is formed. The electrode pad 10 is constituted by the plurality of minute conductor lands 17. When a current of any frequency is applied, most of the current flows from the electrode pad 10 through the main path passing through the extraction electrode portion and the vibrating element, and hardly flows to other portions. Deterioration can be prevented.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、圧電部材を用いた
共振子やフィルター等の圧電薄膜振動子に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a piezoelectric thin film vibrator such as a resonator or a filter using a piezoelectric member.
【0002】[0002]
【従来の技術】図11には共振子やフィルター等として
使用される圧電薄膜振動子の一例が平面図により示さ
れ、図12には図11に示すA−A部分の断面図が示さ
れている。図11及び図12に示すように、この圧電薄
膜振動子は、基板(例えば、シリコン基板)1にダイヤ
フラム2が形成されており、基板1の上に絶縁部材(例
えば、酸化シリコン膜)3と下部電極部4と圧電薄膜部
材(例えば、ZnO膜)5と上部電極部6とが順に積層
されて振動素子Pが形成され、この振動素子Pの下部電
極部4から下部引き出し電極部7が、上部電極部6から
上部引き出し電極部8がそれぞれ引き出し形成されてお
り、上記下部引き出し電極部7と上部引き出し電極部8
にはそれぞれ電極パッド10a,10bが導通接続され
ている構成を有している。2. Description of the Related Art FIG. 11 is a plan view showing an example of a piezoelectric thin film vibrator used as a resonator, a filter or the like, and FIG. 12 is a cross-sectional view taken along a line AA shown in FIG. I have. As shown in FIGS. 11 and 12, this piezoelectric thin-film vibrator has a diaphragm 2 formed on a substrate (eg, a silicon substrate) 1 and an insulating member (eg, a silicon oxide film) 3 on the substrate 1. The lower electrode part 4, the piezoelectric thin film member (for example, a ZnO film) 5 and the upper electrode part 6 are sequentially laminated to form a vibration element P, and the lower extraction electrode part 7 from the lower electrode part 4 of the vibration element P An upper extraction electrode portion 8 is formed by being drawn out from the upper electrode portion 6, respectively, and the lower extraction electrode portion 7 and the upper extraction electrode portion 8 are formed.
Has a configuration in which the electrode pads 10a and 10b are electrically connected.
【0003】上記各電極パッド10a,10b上に図1
1の点線に示すように半田バンプやワイヤボンド等の接
続部材11を接合形成し、該接続部材11を用いて圧電
薄膜振動子は外部の接続相手側の回路等に導通接続する
ことができる。FIG. 1 shows the above-mentioned electrode pads 10a and 10b.
As shown by the dotted line 1, a connection member 11 such as a solder bump or a wire bond is formed by joining, and the piezoelectric thin film vibrator can be electrically connected to an external circuit or the like using the connection member 11.
【0004】[0004]
【発明が解決しようとする課題】ところで、上記電極パ
ッド10a,10bの一方側、例えば、電極パッド10
aに外部から印加された電流(電圧信号)は、下部引き
出し電極部7と下部電極部4と圧電薄膜部材5と上部電
極部6と上部引き出し電極部8を順に介して他方側の電
極パッド10bに至るメイン経路と、図7に示すように
絶縁部材3と基板1と絶縁部材3と圧電薄膜部材5を通
って他方側の電極パッド10bに至るサブ経路とに分流
して流れ電極パッド10bから取り出される。By the way, one side of the electrode pads 10a and 10b, for example, the electrode pad 10
The current (voltage signal) externally applied to the electrode pad 10b on the other side passes through the lower extraction electrode section 7, the lower electrode section 4, the piezoelectric thin film member 5, the upper electrode section 6, and the upper extraction electrode section 8 in this order. 7 and a sub-path to the electrode pad 10b on the other side through the insulating member 3, the substrate 1, the insulating member 3, and the piezoelectric thin film member 5 as shown in FIG. Taken out.
【0005】図8にはその電流(信号)の導通経路の等
価回路が示されている。この等価回路は、図8に示すよ
うに、コンデンサC1とインダクタLと抵抗体R1の直
列接続体とコンデンサC0との並列接続体により構成さ
れる上記メイン経路に対応する等価回路12と、コンデ
ンサCzaと抵抗体RsとコンデンサCzbとコンデンサC
pとの直列接続体により構成される上記サブ経路に対応
する等価回路13とが並列接続されて構成されている。FIG. 8 shows an equivalent circuit of a conduction path of the current (signal). As shown in FIG. 8, this equivalent circuit includes an equivalent circuit 12 corresponding to the main path constituted by a series connection of a capacitor C1, an inductor L, a resistor R1, and a capacitor C0, and a capacitor Cza. , Resistor Rs, capacitor Czb, and capacitor C
p and an equivalent circuit 13 corresponding to the above-described sub-path constituted by a series connection with p.
【0006】上記メイン経路に対応する等価回路12の
インピーダンスZpは通電電流(電圧)の周波数によっ
て大きく変化するものであり、例えば、上記絶縁部材3
と下部電極部4と圧電薄膜部材5と上部電極部6の積層
体から成る振動素子Pの共振周波数Fkを持つ電流が通
電しているときには、上記インピーダンスZpは数Ωと
非常に小さいのに対して、上記振動素子Pの反共振周波
数Fhを持つ電流が通電しているときには、上記インピ
ーダンスZpは、数10kΩ以上と大幅に増加する。The impedance Zp of the equivalent circuit 12 corresponding to the main path varies greatly depending on the frequency of the current (voltage).
When a current having a resonance frequency Fk of the vibrating element P composed of a laminate of the lower electrode portion 4, the piezoelectric thin film member 5, and the upper electrode portion 6 is flowing, the impedance Zp is very small at several Ω. Thus, when a current having the anti-resonance frequency Fh of the vibrating element P is flowing, the impedance Zp greatly increases to several tens kΩ or more.
【0007】また、前記サブ経路に対応する等価回路1
3を構成するコンデンサCzaの静電容量Czaは、電極パ
ッド10aの電極面積Saと絶縁部材3が持つ誘電率ε
と絶縁部材3の膜厚dとにより定まるものであり、抵抗
体Rsは基板1の抵抗率rにより定まり、コンデンサC
zbの静電容量Czbは電極パッド10bの電極面積Sbと
絶縁部材3の誘電率εと絶縁部材3の膜厚dとにより定
まり、コンデンサCpの静電容量Cpは電極パッド10
bの電極面積Sbと圧電薄膜部材5の誘電率ε’と圧電
薄膜部材5の膜厚d’とにより定まるものであることか
ら、等価回路13のインピーダンスZsは、例えば、ほ
ぼ数10kΩ程度に定まる。Further, an equivalent circuit 1 corresponding to the sub-path
The capacitance Cza of the capacitor Cza constituting the electrode member 3 is determined by the electrode area Sa of the electrode pad 10a and the dielectric constant ε of the insulating member 3.
And the film thickness d of the insulating member 3, the resistor Rs is determined by the resistivity r of the substrate 1, and the capacitor Cs
The capacitance Czb of the electrode pad 10b is determined by the electrode area Sb of the electrode pad 10b, the dielectric constant ε of the insulating member 3 and the thickness d of the insulating member 3, and the capacitance Cp of the capacitor Cp is determined by the electrode pad 10b.
b, which is determined by the electrode area Sb of b, the dielectric constant ε ′ of the piezoelectric thin film member 5 and the film thickness d ′ of the piezoelectric thin film member 5, the impedance Zs of the equivalent circuit 13 is determined, for example, to about several tens kΩ. .
【0008】上記電流のメイン経路とサブ経路は上記の
ようなインピーダンスZp,Zsを有することから、上
記共振周波数Fkを持つ電流の通電時には、上記の如く
メイン経路のインピーダンスZpはサブ経路のインピー
ダンスZsに比べて格段に小さく、このことにより、電
流の多くはメイン経路を通電してサブ経路には殆ど通電
せず、振動素子Pの周波数特性は図9の実線カーブAに
示すように良好となる。Since the main path and the sub path of the current have the impedances Zp and Zs as described above, when the current having the resonance frequency Fk is supplied, the impedance Zp of the main path is changed to the impedance Zs of the sub path as described above. By this, much of the current flows through the main path and hardly flows through the sub-path, and the frequency characteristic of the vibrating element P is improved as shown by the solid curve A in FIG. .
【0009】これに対して、反共振周波数Fhを持つ電
流の通電時には、上記の如く、サブ経路のインピーダン
スZsが非常に大きくなり、例えば、メイン経路のイン
ピーダンスZpがサブ経路のインピーダンスZsとほぼ
同程度の大きさとなってしまう。このような場合には電
流はメイン経路とサブ経路とにほぼ2分に分流して通電
してしまい、このことに起因して、反共振周波数Fhの
電流通電時には振動素子Pの周波数特性が、図9の点線
カーブBに示すように、悪化したものとなる。On the other hand, when a current having the anti-resonance frequency Fh is supplied, the impedance Zs of the sub path becomes very large as described above. For example, the impedance Zp of the main path is substantially equal to the impedance Zs of the sub path. It will be of the order of magnitude. In such a case, the current is split into the main path and the sub path in approximately two minutes and energized. Due to this, the frequency characteristic of the vibrating element P changes when current is applied at the anti-resonance frequency Fh. As shown by the dotted curve B in FIG.
【0010】そこで、上記サブ経路のインピーダンスZ
sを増加して反共振周波数Fhの電流通電時の周波数特
性を向上させるための手法が様々提案されている。例え
ば、特公平1−61253号公報には、図10に示すよ
うに、圧電薄膜部材5と電極パッド10bの間に絶縁部
材14を介設し、サブ経路の静電容量を低下させてイン
ピーダンスZsの増加を図り、反共振周波数Fhの電流
通電時の周波数特性向上を図る手法が提案されている。Therefore, the impedance Z of the sub-path is
Various methods have been proposed for increasing s to improve the frequency characteristics of the anti-resonance frequency Fh when current is supplied. For example, in Japanese Patent Publication No. 1-61253, as shown in FIG. 10, an insulating member 14 is interposed between the piezoelectric thin film member 5 and the electrode pad 10b to reduce the capacitance of the sub-path to reduce the impedance Zs. A method has been proposed in which the frequency characteristics of the anti-resonance frequency Fh at the time of current supply are improved by increasing the frequency.
【0011】しかしながら、この提案の手法では、上記
の如く、絶縁部材14を形成しなければならないことか
ら、絶縁部材14の製造工程が増えて圧電薄膜振動子の
製造工程が煩雑となり、製造コストが増加するという問
題が生じる。However, according to the proposed method, the insulating member 14 must be formed as described above, so that the number of manufacturing steps of the insulating member 14 increases, and the manufacturing process of the piezoelectric thin film vibrator becomes complicated, and the manufacturing cost is reduced. The problem of increase arises.
【0012】また、上記特公平1−61253号公報に
記載されている手法以外にも、特開昭64−71208
号公報や、特開昭60−217711号公報等に、サブ
経路のインピーダンスZsを増加して反共振周波数Fh
の電流通電時の周波数特性を向上させるための手法が提
案されているが、それら何れの手法も工程が煩雑となっ
たり、歩留まりが悪化する等の問題が生じ、満足のいく
ものではなかった。In addition to the method described in Japanese Patent Publication No. 1-61253, Japanese Patent Laid-Open Publication No.
In Japanese Unexamined Patent Publication (Kokai) No. 60-177711, the impedance Zs of the sub-path is increased to increase the anti-resonance frequency Fh.
There have been proposed techniques for improving the frequency characteristics at the time of current flow, but these techniques are not satisfactory because of problems such as complicating the process and deteriorating the yield.
【0013】本発明は上記課題を解決するために成され
たものであり、その目的は、反共振周波数の電流の通電
時における周波数特性の悪化を防止することができ、し
かも、製造工程の煩雑化や歩留まり悪化を防止すること
が可能な圧電薄膜振動子を提供することにある。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to prevent the deterioration of frequency characteristics when a current having an anti-resonance frequency is applied, and to complicate the manufacturing process. It is an object of the present invention to provide a piezoelectric thin-film vibrator capable of preventing the formation of the piezoelectric thin film and deterioration of the yield.
【0014】[0014]
【課題を解決するための手段】上記目的を達成するため
に、この発明は次のような構成をもって前記課題を解決
する手段としている。すなわち、第1の発明は、絶縁部
材と下部電極部と圧電薄膜部材と上部電極部とが順に積
層形成された積層体が基板に上記絶縁部材を基板側に向
けて保持形成され、上記下部電極部には下部引き出し電
極部が、上記上部電極部には上部引き出し電極部がそれ
ぞれ導通接続され、上記下部引き出し電極部と上部引き
出し電極部はそれぞれ電極パッドに導通接続されている
圧電薄膜振動子において、前記各電極パッドの少なくと
も一方は、その電極パッド形成領域内に複数の微小導体
ランドが互いに間隙を介して点在配置されている構成を
もって前記課題を解決する手段としている。Means for Solving the Problems In order to achieve the above object, the present invention has the following structure to solve the above problems. That is, in the first invention, a laminate in which an insulating member, a lower electrode portion, a piezoelectric thin film member, and an upper electrode portion are sequentially laminated is formed on a substrate by holding the insulating member toward the substrate side, and forming the lower electrode on the substrate. In the piezoelectric thin-film vibrator, a lower extraction electrode portion is electrically connected to the upper electrode portion, an upper extraction electrode portion is electrically connected to the upper electrode portion, and the lower extraction electrode portion and the upper extraction electrode portion are electrically connected to the electrode pad. At least one of the electrode pads has a configuration in which a plurality of minute conductor lands are interspersed with each other via a gap in the electrode pad formation region to solve the above problem.
【0015】第2の発明は、絶縁部材と下部電極部と圧
電薄膜部材と上部電極部とが順に積層形成された積層体
が基板に上記絶縁部材を基板側に向けて保持形成され、
上記下部電極部には下部引き出し電極部が、上記上部電
極部には上部引き出し電極部がそれぞれ導通接続され、
上記下部引き出し電極部と上部引き出し電極部はそれぞ
れ電極パッドに導通接続されている圧電薄膜振動子にお
いて、前記各電極パッドの少なくとも一方は、その導体
部分に複数の微小開口部が互いに間隙を介して点在形成
されている構成をもって前記課題を解決する手段として
いる。According to a second aspect of the present invention, a laminated body in which an insulating member, a lower electrode portion, a piezoelectric thin film member, and an upper electrode portion are sequentially laminated is formed on a substrate by holding the insulating member toward the substrate.
A lower extraction electrode portion is electrically connected to the lower electrode portion, and an upper extraction electrode portion is electrically connected to the upper electrode portion.
In the piezoelectric thin-film vibrator in which the lower extraction electrode portion and the upper extraction electrode portion are each electrically connected to an electrode pad, at least one of the electrode pads has a plurality of minute openings in a conductor portion thereof with a gap therebetween. It is a means for solving the above-mentioned problem with a configuration formed in a dotted manner.
【0016】第3の発明は、絶縁部材と下部電極部と圧
電薄膜部材と上部電極部とが順に積層形成された積層体
が基板に上記絶縁部材を基板側に向けて保持形成され、
上記下部電極部には下部引き出し電極部が、上記上部電
極部には上部引き出し電極部がそれぞれ導通接続され、
上記下部引き出し電極部と上部引き出し電極部はそれぞ
れ電極パッドに導通接続されている圧電薄膜振動子にお
いて、前記各電極パッドの少なくとも一方は、上記引き
出し電極部から電極パッド形成領域内に延長形成された
延長導体部と、該導体部から分岐形成された1本以上の
分岐導体部とを有して形成されている構成をもって前記
課題を解決する手段としている。According to a third aspect of the present invention, a laminate in which an insulating member, a lower electrode portion, a piezoelectric thin film member, and an upper electrode portion are sequentially laminated is formed on a substrate by holding the insulating member toward the substrate.
A lower extraction electrode portion is electrically connected to the lower electrode portion, and an upper extraction electrode portion is electrically connected to the upper electrode portion.
In the piezoelectric thin-film vibrator in which the lower extraction electrode portion and the upper extraction electrode portion are each electrically connected to an electrode pad, at least one of the electrode pads is formed to extend from the extraction electrode portion into an electrode pad formation region. The present invention is a means for solving the above-mentioned problem with a configuration having an extended conductor portion and at least one branch conductor portion branched from the conductor portion.
【0017】第4の発明は、絶縁部材と下部電極部と圧
電薄膜部材と上部電極部とが順に積層形成された積層体
が基板に上記絶縁部材を基板側に向けて保持形成され、
上記下部電極部には下部引き出し電極部が、上記上部電
極部には上部引き出し電極部がそれぞれ導通接続され、
上記下部引き出し電極部と上部引き出し電極部はそれぞ
れ電極パッドに導通接続されている圧電薄膜振動子にお
いて、前記各電極パッドの少なくとも一方は、上記引き
出し電極部から電極パッド形成領域内に延長形成された
延長導体部と、該導体部から分岐形成された1本以上の
分岐導体部と、上記延長導体部と分岐導体部の形成部分
を除いた電極パッド形成領域内に互いに間隙を介して点
在配置される複数の微小導体ランドとを有して形成され
ている構成をもって前記課題を解決する手段としてい
る。According to a fourth aspect of the present invention, a laminate in which an insulating member, a lower electrode portion, a piezoelectric thin film member, and an upper electrode portion are sequentially formed is formed on a substrate by holding the insulating member toward the substrate.
A lower extraction electrode portion is electrically connected to the lower electrode portion, and an upper extraction electrode portion is electrically connected to the upper electrode portion.
In the piezoelectric thin-film vibrator in which the lower extraction electrode portion and the upper extraction electrode portion are each electrically connected to an electrode pad, at least one of the electrode pads is formed to extend from the extraction electrode portion into an electrode pad formation region. The extension conductor, one or more branch conductors branched from the conductor, and the electrode pad formation region other than the extension conductor and the branch conductor formation are interspersed with each other with a gap therebetween. With a configuration formed with a plurality of small conductor lands, the above-mentioned problem is solved.
【0018】第5の発明は、絶縁部材と下部電極部と圧
電薄膜部材と上部電極部とが順に積層形成された積層体
が基板に上記絶縁部材を基板側に向けて保持形成され、
上記下部電極部には下部引き出し電極部が、上記上部電
極部には上部引き出し電極部がそれぞれ導通接続され、
上記下部引き出し電極部と上部引き出し電極部はそれぞ
れ電極パッドに導通接続されている圧電薄膜振動子にお
いて、前記各電極パッドの少なくとも一方は、上記引き
出し電極部から電極パッド形成領域内に延長形成された
延長導体部と、この延長導体部の形成部分を除いた電極
パッド形成領域内に互いに間隙を介して点在配置される
複数の微小導体ランドとを有して形成されている構成を
もって前記課題を解決する手段としている。According to a fifth aspect of the present invention, a laminate in which an insulating member, a lower electrode portion, a piezoelectric thin film member, and an upper electrode portion are sequentially laminated is formed on a substrate by holding the insulating member toward the substrate.
A lower extraction electrode portion is electrically connected to the lower electrode portion, and an upper extraction electrode portion is electrically connected to the upper electrode portion.
In the piezoelectric thin-film vibrator in which the lower extraction electrode portion and the upper extraction electrode portion are each electrically connected to an electrode pad, at least one of the electrode pads is formed to extend from the extraction electrode portion into an electrode pad formation region. The above object is achieved by a configuration in which an extended conductor portion and a plurality of minute conductor lands are arranged in an electrode pad forming region excluding a portion where the extended conductor portion is formed and are interspersed with a gap therebetween. It is a means to solve.
【0019】上記構成の発明において、電極パッドを、
ランド構造、又は、網状、又は、延長導体部と分岐導体
部から成る構造、又は、延長導体部と分岐導体部と微小
導体ランドとから成る構造、又は、延長導体部と微小導
体ランドとから成る構造に形成する。In the invention having the above structure, the electrode pad is
A land structure, a net-like structure, a structure consisting of an extension conductor and a branch conductor, or a structure consisting of an extension conductor, a branch conductor, and a minute conductor land, or a structure consisting of an extension conductor and a minute conductor land Formed into a structure.
【0020】電極パッド形成領域の全領域に亙り導体が
形成される従来の電極パッドに比べて、本発明において
特徴的な電極パッドは電極面積を格段に削減することが
できる。このことによって、圧電薄膜振動子が持つ反共
振周波数の電流通電時であっても、一方の電極パッドか
ら積層体を通って他方の電極パッドに至るメインの電流
経路のインピーダンスよりも、一方の電極パッドから基
板を通して他方側の電極パッドに至るサブ電流経路のイ
ンピーダンスを大きくすることができ、通電電流の殆ど
が上記メイン経路を通電することから、反共振周波数の
電流通電時における圧電薄膜振動子の周波数特性の悪化
が回避される。Compared with a conventional electrode pad in which a conductor is formed over the entire area of the electrode pad formation region, the characteristic electrode pad of the present invention can significantly reduce the electrode area. As a result, even when current flows at the anti-resonance frequency of the piezoelectric thin-film vibrator, the impedance of one electrode is larger than the impedance of the main current path from one electrode pad to the other electrode pad through the laminate. The impedance of the sub-current path from the pad to the electrode pad on the other side through the substrate can be increased, and most of the current flows through the main path. Deterioration of frequency characteristics is avoided.
【0021】また、電極パッドの導体パターンを本発明
において特徴的な導体パターンに変更するだけで、従来
と同様の製造工程で圧電薄膜振動子を製造できるので、
従来の製造工程よりも製造工程が増加するのが防止され
て製造工程の煩雑化は回避され、また、歩留まりの悪化
も回避される。Further, the piezoelectric thin-film vibrator can be manufactured by the same manufacturing process as that of the related art simply by changing the conductive pattern of the electrode pad to a conductive pattern characteristic of the present invention.
The number of manufacturing steps is prevented from increasing compared to the conventional manufacturing steps, so that the manufacturing steps are not complicated, and the yield is also prevented from deteriorating.
【0022】[0022]
【発明の実施の形態】以下に、この発明に係る実施形態
例を図面に基づき説明する。Embodiments of the present invention will be described below with reference to the drawings.
【0023】図1には第1の実施形態例において特徴的
な電極パッドの構成が示されている。この第1の実施形
態例が前記図11に示す圧電薄膜振動子と異なる特徴的
なことは、図1に示すように、電極パッド10が延長導
体部16と複数の微小導体ランド17を有して構成され
ていることであり、それ以外の構成は前記図11に示す
圧電薄膜振動子の構成と同様であり、その共通部分の重
複説明は省略する。FIG. 1 shows a configuration of a characteristic electrode pad in the first embodiment. The feature of the first embodiment that is different from the piezoelectric thin film vibrator shown in FIG. 11 is that the electrode pad 10 has an extended conductor portion 16 and a plurality of minute conductor lands 17 as shown in FIG. The other configuration is the same as the configuration of the piezoelectric thin-film vibrator shown in FIG. 11 described above, and the overlapping description of the common parts will be omitted.
【0024】ところで、前述したように、反共振周波数
Fhを持つ電流の通電時における振動素子Pの周波数特
性の悪化を防止するためには、反共振周波数Fhの電流
通電時における電流のメイン経路(図8に示す等価回路
12)のインピーダンスZpよりもサブ経路(等価回路
13)のインピーダンスZsが大きくなるように圧電薄
膜振動子を構成することが考えられる。As described above, in order to prevent the frequency characteristic of the vibrating element P from deteriorating when the current having the anti-resonance frequency Fh is supplied, the main path of the current when the current having the anti-resonance frequency Fh is supplied ( It is conceivable to configure the piezoelectric thin-film vibrator such that the impedance Zs of the sub-path (equivalent circuit 13) is larger than the impedance Zp of the equivalent circuit 12) shown in FIG.
【0025】上記サブ経路のインピーダンスZsを増加
するためには、サブ経路のコンデンサCzaやコンデンサ
CzbやコンデンサCpの各静電容量を減少させることが
考えられる。上記各静電容量を減少させるためには、絶
縁部材3の誘電率εを下げる、あるいは、絶縁部材3の
膜厚dを薄くする、あるいは、電極パッド10の電極面
積Sを削減することが考えられる。しかし、上記絶縁部
材3の誘電率ε及び厚みdは、上記振動素子Pの予め定
まる所望の周波数特性を得るために、ほぼ定められてし
まうので、上記の如くサブ経路のインピーダンスZsの
増加を図るために自由に可変設定することはできない。In order to increase the impedance Zs of the sub-path, it is conceivable to reduce the capacitances of the capacitors Cza, Czb and Cp of the sub-path. In order to reduce the above-mentioned respective capacitances, it is considered that the dielectric constant ε of the insulating member 3 is reduced, the thickness d of the insulating member 3 is reduced, or the electrode area S of the electrode pad 10 is reduced. Can be However, since the dielectric constant ε and the thickness d of the insulating member 3 are almost determined in order to obtain a predetermined frequency characteristic predetermined for the vibration element P, the impedance Zs of the sub path is increased as described above. Therefore, it cannot be freely set.
【0026】そこで、この実施形態例では、電極パッド
10の電極面積Sを削減することでコンデンサCzaとコ
ンデンサCzbとコンデンサCpの各静電容量を減少させ
て前記サブ経路のインピーダンスZsを増加させる構成
とし、反共振周波数Fhの電流通電時における振動素子
Pの周波数特性の悪化を防止することができる構成を備
えたことを特徴としている。Therefore, in this embodiment, the capacitance of the capacitor Cza, the capacitor Czb, and the capacitor Cp is reduced by reducing the electrode area S of the electrode pad 10, and the impedance Zs of the sub-path is increased. And a configuration capable of preventing deterioration of the frequency characteristics of the vibrating element P when current is supplied at the anti-resonance frequency Fh.
【0027】この実施形態例に示す電極パッド10(1
0a,10b)は、上記の如く、延長導体部16と複数
の微小導体ランド17を有して構成され、上記延長導体
部16は予め定められた図1の点線により囲まれる電極
パッド形成領域D内に引き出し電極8(7)から延長形
成されたものであり、複数の微小導体ランド17は、上
記延長導体部16が形成された部分を除く電極パッド形
成領域D内に互いに間隙を介して点在形成されている。The electrode pad 10 (1) shown in this embodiment
0a, 10b) have the extended conductor portion 16 and the plurality of minute conductor lands 17 as described above, and the extended conductor portion 16 is formed in the electrode pad formation region D surrounded by a predetermined dotted line in FIG. A plurality of minute conductor lands 17 are formed in the electrode pad formation region D except for the portion where the extension conductor portion 16 is formed, with a point therebetween with a gap therebetween. Is formed.
【0028】この実施形態例では、上記電極パッド形成
領域Dは、前記接続部材11を電極パッド10上に接合
形成するアセンブリ工程での接続部材11の接合位置ず
れを考慮して、図1に示す鎖線により囲まれる上記電極
パッド10と接続部材11との接合部分の面積Mよりも
広い面積を持つ領域が設定される。また、接続部材11
の形成位置ずれ及び接続部材11と電極パッド10の導
通不良を考慮して、延長導体部16と微小導体ランド1
7の各形状及び面積や、延長導体部16と微小導体ラン
ド17間の間隔や、各微小導体ランド17間の間隔が設
定されている。In this embodiment, the electrode pad formation region D is shown in FIG. 1 in consideration of the displacement of the connection position of the connection member 11 in the assembly step of forming the connection member 11 on the electrode pad 10. A region having an area larger than the area M of the joint between the electrode pad 10 and the connection member 11 surrounded by the chain line is set. Also, the connection member 11
Considering the formation position shift and the poor connection between the connection member 11 and the electrode pad 10, the extension conductor 16 and the minute conductor land 1
7, the distance between the extended conductor 16 and the minute conductor land 17, and the distance between the minute conductor lands 17 are set.
【0029】より具体的な例を以下に示す。基板1は面
方位{100}のシリコン基板を用い、絶縁部材3は酸
化シリコン膜により構成され、圧電薄膜部材5はZnO
膜により構成されており、電極パッド10に接合形成さ
れる接続部材11である半田バンプの径が約100μm
である場合、上記電極パッド形成領域Dは、電極パッド
10と接続部材11の接合部分の面積Mの約2倍の面積
を持つように設定され、例えば、図1の点線に示すよう
に、一辺の長さが約125μmである正方形の領域が設
定される。A more specific example will be described below. The substrate 1 is a silicon substrate having a plane orientation of {100}, the insulating member 3 is made of a silicon oxide film, and the piezoelectric thin film member 5 is made of ZnO.
The diameter of the solder bump, which is a connection member 11 formed by bonding to the electrode pad 10, is approximately 100 μm.
In this case, the electrode pad formation region D is set to have an area approximately twice as large as the area M of the joint portion between the electrode pad 10 and the connection member 11. For example, as shown by a dotted line in FIG. A square area having a length of about 125 μm is set.
【0030】また、引き出し電極8(7)から上記電極
パッド形成領域D内に延長形成される延長導体部16は
電極パッド形成領域Dの中心部を通り、幅約25μm、
長さ約125μmの大きさを持つ形態に形成され、この
延長導体部16の形成部分を除く電極パッド形成領域D
内に、一辺の長さが約15μmの正方形の微小導体ラン
ド17が20個互いに間隙を介して点在形成されて電極
パッド10が構成される。この電極パッド10では、上
記約100μm径の半田バンプは延長導体部16及び1
0〜12個の微小導体ランド17に接合することにな
る。The extension conductor 16 extending from the extraction electrode 8 (7) into the electrode pad formation region D passes through the center of the electrode pad formation region D and has a width of about 25 μm.
The electrode pad formation region D is formed in a form having a length of about 125 μm and excluding a portion where the extension conductor portion 16 is formed.
Inside, 20 square minute conductor lands 17 each having a side length of about 15 μm are interspersed and formed with a gap therebetween to form the electrode pad 10. In this electrode pad 10, the above-mentioned solder bump having a diameter of about 100 μm is connected to the extended conductor portions 16 and 1.
It will be joined to 0 to 12 minute conductor lands 17.
【0031】この実施形態例によれば、延長導体部16
と複数の微小導体ランド17とが互いに間隙を介して形
成されて電極パッド10が構成されているので、図11
に示すように電極パッド形成領域Dの全領域に亙り導体
部が形成されているものに比べて、電極パッド10の導
体部分を削減することができ、つまり、電極パッド10
の電極面積Sを削減することができる。According to this embodiment, the extension conductor 16
11 and a plurality of minute conductor lands 17 are formed with a gap therebetween to form the electrode pad 10.
As shown in FIG. 2, the conductor portion of the electrode pad 10 can be reduced as compared with the case where the conductor portion is formed over the entire region of the electrode pad formation region D.
Electrode area S can be reduced.
【0032】この電極パッド10の電極面積Sの削減に
より、電流のサブ経路におけるコンデンサCzaとコンデ
ンサCzbとコンデンサCpの各静電容量を減少させるこ
とができる。By reducing the electrode area S of the electrode pad 10, the capacitances of the capacitors Cza, Czb and Cp in the current sub-path can be reduced.
【0033】例えば、上記具体例に述べた例では、サブ
経路のコンデンサCzaと抵抗体RsとコンデンサCzbと
コンデンサCpの直列接続体の静電容量を、図11に示
す電極パッド10の形態のものよりも約40%以上も大
幅に削減することができる。For example, in the example described in the above specific example, the capacitance of the series connection of the capacitor Cza, the resistor Rs, the capacitor Czb, and the capacitor Cp in the sub path is the same as that of the electrode pad 10 shown in FIG. About 40% or more.
【0034】上記のように、サブ経路のコンデンサCza
とコンデンサCzbとコンデンサCpの各静電容量を削減
することができることによって、サブ経路のインピーダ
ンスZsを大幅に増加させることができ、反共振周波数
の電流の通電時におけるメイン経路のインピーダンスZ
pよりもサブ経路のインピーダンスZsを大きくするこ
とができ、反共振周波数の電流通電時であっても、電流
の多くはメイン経路を通電しサブ経路には殆ど流れない
ことから、振動素子Pの周波数特性の悪化を防止するこ
とができ、図9の実線に示すような良好な周波数特性を
得ることができる。As described above, the sub path capacitor Cza
, The capacitance of the capacitor Czb and the capacitance of the capacitor Cp can be reduced, and the impedance Zs of the sub-path can be greatly increased.
Since the impedance Zs of the sub-path can be made larger than p, and most of the current flows through the main path and hardly flows through the sub-path even when current flows at an anti-resonance frequency, Deterioration of the frequency characteristics can be prevented, and good frequency characteristics as shown by the solid line in FIG. 9 can be obtained.
【0035】また、電極パッド10の導体パターンを図
1に示すような導体パターンに変更するだけで従来と同
様な製造工程で圧電薄膜振動子を製造することができる
ので、従来の圧電薄膜振動子の製造工程よりも工程が増
加することはなく、製造工程の煩雑化を防止することが
できる。Further, the piezoelectric thin-film vibrator can be manufactured by the same manufacturing process as the conventional one just by changing the conductive pattern of the electrode pad 10 to the conductive pattern as shown in FIG. Thus, the number of steps is not increased as compared with the manufacturing steps of the above, and the complication of the manufacturing steps can be prevented.
【0036】さらに、上記の如く電極パッド10の電極
面積Sを削減しても、接続部材11との接合に要する面
積Mよりも広い面積を持つ電極パッド形成領域D内に複
数の微小導体ランド17を点在配置したので、接続部材
11の接合位置ずれが生じても、接続部材11を電極パ
ッド10にほぼ確実に接合させることができ、電極パッ
ド10と接続部材11の接合不良を防止することができ
る。その上、引き出し電極7(8)から延長形成される
延長導体部16を設けたので、接続部材11の接合位置
ずれが起こっても、接続部材11を引き出し電極7
(8)にほぼ確実に導通接続させることができる。Further, even if the electrode area S of the electrode pad 10 is reduced as described above, a plurality of minute conductor lands 17 are formed in the electrode pad formation region D having an area larger than the area M required for bonding with the connection member 11. Are scattered, the connecting member 11 can be almost certainly joined to the electrode pad 10 even if the joining position of the connecting member 11 is shifted, and the joining failure between the electrode pad 10 and the connecting member 11 is prevented. Can be. In addition, since the extension conductor 16 extending from the extraction electrode 7 (8) is provided, even if the joining position of the connection member 11 is shifted, the connection member 11 is connected to the extraction electrode 7 (8).
Conductive connection can be almost surely made to (8).
【0037】さらにまた、上記の如く電極パッド10を
延長導体部16と複数の微小導体ランド17により構成
することによって、電極パッド10と接続部材11の接
合強度を強化することができるという効果も奏すること
ができる。それというのは、図2に示すように、接続部
材11は延長導体部16や微小導体ランド17の上面J
だけに接合するのではなく、延長導体部16や微小導体
ランド17の側面H、及び、延長導体部16と微小導体
ランド17間の隙間や各延長導体部16間の隙間に露出
される絶縁部材3や圧電薄膜部材5の上面Tにも接合す
ることから、電極パッド10と接続部材11の接合面積
が図11に示す形態の電極パッド10と接続部材11の
接合面積よりも格段に増加するので、この第1の実施形
態例に示す電極パッド10では、図11に示す従来の電
極パッド10の形態のものよりも格段に接続部材11の
接合強度を高めることができるというものである。Further, by forming the electrode pad 10 from the extended conductor portion 16 and the plurality of minute conductor lands 17 as described above, the effect of increasing the bonding strength between the electrode pad 10 and the connecting member 11 can be obtained. be able to. That is, as shown in FIG. 2, the connection member 11 is formed on the upper surface J of the extension conductor 16 or the minute conductor land 17.
Insulation members exposed to the side surfaces H of the extension conductors 16 and the minute conductor lands 17, the gaps between the extension conductors 16 and the minute conductor lands 17, and the gaps between the extension conductors 16, instead of the joints. 3 and the upper surface T of the piezoelectric thin film member 5, the bonding area between the electrode pad 10 and the connecting member 11 is significantly larger than the bonding area between the electrode pad 10 and the connecting member 11 in the form shown in FIG. In the electrode pad 10 according to the first embodiment, the bonding strength of the connection member 11 can be significantly increased as compared with the conventional electrode pad 10 shown in FIG.
【0038】以下に第2の実施形態例を説明する。この
実施形態例において特徴的なことは、図3に示すよう
に、電極パッド10を網状の構造に形成したことであ
る。それ以外の構成は前記第1の実施形態例と同様であ
り、その共通部分の重複説明は省略する。Hereinafter, a second embodiment will be described. The feature of this embodiment is that the electrode pad 10 is formed in a net-like structure as shown in FIG. The other configuration is the same as that of the first embodiment, and the description of the common parts will not be repeated.
【0039】図3に示すように、この実施形態例に示す
電極パッド10は、電極パッド形成領域D内に形成され
た導体部分18に、複数の微小開口部20が互いに間隙
を介して形成されており、導体部分18が網状の構造と
成している。As shown in FIG. 3, in the electrode pad 10 shown in this embodiment, a plurality of minute openings 20 are formed in a conductor portion 18 formed in an electrode pad formation region D with a gap therebetween. The conductor portion 18 has a net-like structure.
【0040】この実施形態例では、導体部分18は、前
記接続部材11のアセンブリ工程における接続部材11
の接合位置ずれを考慮し前記第1の実施形態例と同様に
して設定される電極パッド形成領域Dに形成され、つま
り、上記電極パッド10と接続部材11との接合に要す
る面積Mよりも広い面積を持つ領域に形成される。ま
た、接続部材11の接合位置ずれ及び接続部材11と導
体部分18の導通不良を考慮して、各微小開口部20の
形状及び開口面積や、各微小開口部20間の間隔が設定
されている。In this embodiment, the conductor portion 18 is connected to the connecting member 11 in the process of assembling the connecting member 11.
Is formed in the electrode pad formation region D which is set in the same manner as in the first embodiment in consideration of the displacement of the bonding position, that is, is larger than the area M required for bonding the electrode pad 10 and the connection member 11. It is formed in a region having an area. The shape and opening area of each minute opening 20 and the interval between each minute opening 20 are set in consideration of the displacement of the joining position of the connecting member 11 and the poor conduction between the connecting member 11 and the conductor portion 18. .
【0041】この第2の実施形態例によれば、電極パッ
ド10は導体部分18が網状の電極パッドと成している
ので、従来のように電極パッド形成領域Dの全領域に亙
り導体を形成する場合に比べて、微小開口部20を形成
した分、電極パッド10の電極面積Sが少なく、電極面
積Sを大幅に削減することができ、前記第1の実施形態
例と同様に、電流のサブ経路のコンデンサCzaとコンデ
ンサCzbとコンデンサCpの各静電容量を減少させるこ
とができ、このことによって、サブ経路のインピーダン
スZsを格段に増加させることができる。このことか
ら、反共振周波数Fhの電流の通電時にも、電流の多く
が振動素子Pを通るメイン経路で通電し、振動素子Pの
周波数特性の悪化を回避することができる。According to the second embodiment, since the conductor portion 18 of the electrode pad 10 is formed as a mesh-shaped electrode pad, the conductor is formed over the entire area of the electrode pad formation region D as in the conventional case. As compared with the case where the minute opening 20 is formed, the electrode area S of the electrode pad 10 is small and the electrode area S can be largely reduced by the amount corresponding to the formation of the minute opening 20. The capacitance of each of the capacitors Cza, Czb, and Cp in the sub-path can be reduced, thereby significantly increasing the impedance Zs in the sub-path. For this reason, even when the current having the anti-resonance frequency Fh is supplied, most of the current is supplied through the main path passing through the vibrating element P, and the deterioration of the frequency characteristics of the vibrating element P can be avoided.
【0042】また、上記の如く、接続部材11との接合
に要する面積Mよりも広い領域を持つ電極パッド形成領
域D内に導体部分18を形成しているので、前記第1の
実施形態例と同様に、接続部材11との接合不良を防止
することができる。さらに、電極パッド10の導体部分
18部分に複数の微小開口部20を設けることによっ
て、電極パッド10と接続部材11の接合面積が増加
し、電極パッド10と接続部材11の接合強度を強化す
ることができる。Further, as described above, the conductor portion 18 is formed in the electrode pad formation region D having a larger area than the area M required for joining with the connection member 11, so that the first embodiment differs from the first embodiment. Similarly, poor joining with the connection member 11 can be prevented. Further, by providing a plurality of minute openings 20 in the conductor portion 18 of the electrode pad 10, the bonding area between the electrode pad 10 and the connecting member 11 increases, and the bonding strength between the electrode pad 10 and the connecting member 11 is enhanced. Can be.
【0043】以下に第3の実施形態例を説明する。この
第3の実施形態例において特徴的なことは、図4に示す
ように、電極パッド10が延長導体部16と複数の微小
導体ランド17と分岐導体部21とにより構成されてい
ることである。それ以外の構成は前記各実施形態例と同
様であり、その共通部分の重複説明は省略する。The third embodiment will be described below. The feature of the third embodiment is that, as shown in FIG. 4, the electrode pad 10 is constituted by an extended conductor 16, a plurality of minute conductor lands 17, and a branch conductor 21. . The other configuration is the same as that of each of the above embodiments, and the overlapping description of the common parts will be omitted.
【0044】図4に示すように、この実施形態例に示す
電極パッド10には、引き出し電極7(8)から電極パ
ッド形成領域D内に延長形成された延長導体部16が形
成され、また、この延長導体部16の伸長方向に直交す
る方向に分岐導体部21が延長導体部16から分岐形成
されている。さらに、上記延長導体部16と分岐導体部
21の形成部分を除く電極パッド形成領域D内には、複
数の微小導体ランド17が互いに間隙を介して点在形成
されている。As shown in FIG. 4, the electrode pad 10 according to this embodiment is provided with an extended conductor portion 16 extending from the extraction electrode 7 (8) into the electrode pad formation region D. A branch conductor 21 is formed to branch off from the extension conductor 16 in a direction orthogonal to the direction in which the extension conductor 16 extends. Further, in the electrode pad formation region D excluding the portions where the extension conductor portion 16 and the branch conductor portion 21 are formed, a plurality of minute conductor lands 17 are scattered and formed with a gap therebetween.
【0045】この第3の実施形態例においても、前記各
実施形態例と同様に、電極パッド10の電極面積Sの削
減が図れ、このことに起因して電流のサブ経路のインピ
ーダンスZsを増加することができ、反共振周波数Fh
の電流通電時における振動素子Pの周波数特性の悪化を
防止することができる。また、電極パッド10と接続部
材11の接合不良を防止することができ、さらに、電極
パッド10と接続部材11の接合強度の強化を図ること
ができるという効果を得ることができる。Also in the third embodiment, the electrode area S of the electrode pad 10 can be reduced in the same manner as in each of the above embodiments, and as a result, the impedance Zs of the current sub-path increases. The anti-resonance frequency Fh
It is possible to prevent the frequency characteristics of the vibrating element P from deteriorating when the current is supplied. In addition, it is possible to prevent the bonding failure between the electrode pad 10 and the connecting member 11, and further to obtain the effect that the bonding strength between the electrode pad 10 and the connecting member 11 can be enhanced.
【0046】なお、この発明は上記各実施形態例に限定
されるものではなく、様々な実施の形態を採り得る。例
えば、上記各実施形態例では、下部引き出し電極部7に
接続される電極パッド10aと上部引き出し電極部8に
接続される電極パッド10bとの両方を上記各実施形態
例に示すような形態に形成したが、それら電極パッド1
0a,10bのうちの一方側だけを上記各実施形態例に
示す形態の電極パッドに形成し、他方側は図11に示す
ような形態に電極パッド10を形成してもよい。It should be noted that the present invention is not limited to the above embodiments, and various embodiments can be adopted. For example, in each of the above embodiments, both the electrode pad 10a connected to the lower extraction electrode section 7 and the electrode pad 10b connected to the upper extraction electrode section 8 are formed in the forms shown in the above embodiments. However, these electrode pads 1
Only one side of Oa and 10b may be formed in the electrode pad of the form shown in each of the above embodiments, and the other side may be formed of the electrode pad 10 in a form as shown in FIG.
【0047】例えば、電極パッド10aのみを上記各実
施形態例に示す形態に形成した場合には、図11に示す
従来例のものに比べて、電流のサブ経路のコンデンサC
zaの静電容量が上記電極パッド10aの電極面積Sの減
少分に応じて低減するので、この場合にも、上記各実施
形態例と同様の効果を得ることができる。また、電極パ
ッド10bのみを上記各実施形態例に示す形態に形成し
た場合には、電流のサブ経路のコンデンサCzbとコンデ
ンサCpの各静電容量を上記電極パッド10bの電極面
積Sの減少分に応じて削減することができ、この場合に
も、上記各実施形態例と同様の効果を奏することができ
る。For example, when only the electrode pad 10a is formed in the form shown in each of the above embodiments, the capacitor C of the current sub-path is smaller than that of the conventional example shown in FIG.
Since the capacitance of za decreases in accordance with the decrease in the electrode area S of the electrode pad 10a, the same effect as in the above embodiments can be obtained in this case as well. When only the electrode pad 10b is formed in the form shown in each of the above embodiments, the respective capacitances of the capacitor Czb and the capacitor Cp of the current sub-path are reduced by the decrease of the electrode area S of the electrode pad 10b. In this case, the same effects as in the above embodiments can be obtained.
【0048】また、上記電極パッド10a,10bのう
ちの一方側は上記第1の実施形態例に示す形態に形成
し、他方側の電極パッド10は上記第2の実施形態例に
示す形態に形成するというように、電極パッド10aと
電極パッド10bの形態は等しくしなくてもよい。One of the electrode pads 10a and 10b is formed in the form shown in the first embodiment, and the other electrode pad 10 is formed in the form shown in the second embodiment. That is, the form of the electrode pad 10a and the form of the electrode pad 10b do not have to be equal.
【0049】さらに、上記各実施形態例では、電極パッ
ド形成領域Dは方形状であったが、この電極パッド形成
領域Dは図5の(c)に示すように円形状でもよく、ま
た、三角形や、5角以上の多角形等に設定してもよく、
電極パッド形成領域Dの形状及びその面積は接続部材1
1の接合不良防止等を考慮して適宜に設定してよいもの
である。上記第2の実施形態例に示す電極パッド10の
導体部分18の形状は上記電極パッド形成領域Dの形状
に基づくものであることから、導体部分18の形状及び
大きさは接続部材11の接合不良防止等を考慮して適宜
に設定されるものである。Further, in each of the above embodiments, the electrode pad formation region D is square, but this electrode pad formation region D may be circular as shown in FIG. Or may be set to a polygon with five or more corners,
The shape and area of the electrode pad formation region D are determined by the connection member 1
1 may be appropriately set in consideration of the prevention of bonding failure of No. 1. Since the shape of the conductor portion 18 of the electrode pad 10 shown in the second embodiment is based on the shape of the electrode pad formation region D, the shape and size of the conductor portion 18 may be poor connection of the connection member 11. It is appropriately set in consideration of prevention and the like.
【0050】さらに、上記各実施形態例では、基板1は
面方位{100}のシリコン基板により構成されていた
が、基板1は、例えば、面方位{110}のシリコン基
板や面方位{111}のシリコン基板や、GaAsや金
属やセラミックスやガラス等のシリコン以外の材料の基
板により構成してもよい。Further, in each of the above embodiments, the substrate 1 is constituted by a silicon substrate having a plane orientation of {100}. However, the substrate 1 may be formed of, for example, a silicon substrate having a plane orientation of {110} or a plane orientation of {111}. Or a substrate made of a material other than silicon, such as GaAs, metal, ceramics, or glass.
【0051】さらに、上記各実施形態例では、絶縁部材
3は酸化シリコン膜により構成されていたが、絶縁部材
3は上記酸化シリコン膜以外の絶縁材料により構成して
もよい。さらに、上記各実施形態例では、圧電薄膜部材
5はZnOにより構成されていたが、例えば、PZT
(チタン酸ジルコン酸鉛)等のZnO以外の圧電材料に
より圧電薄膜部材5を構成してもよい。Further, in each of the above embodiments, the insulating member 3 is made of a silicon oxide film. However, the insulating member 3 may be made of an insulating material other than the silicon oxide film. Further, in each of the above embodiments, the piezoelectric thin film member 5 is made of ZnO.
The piezoelectric thin film member 5 may be made of a piezoelectric material other than ZnO such as (lead zirconate titanate).
【0052】さらに、上記第3の実施形態例では、延長
導体部16から2本の分岐導体部21が分岐形成されて
いたが、分岐導体部21は1本だけ形成してもよいし、
図5の(a)や(b)に示すように、3本以上形成して
もよい。Further, in the third embodiment, two branch conductors 21 are formed by branching from the extension conductor 16, but only one branch conductor 21 may be formed.
As shown in FIGS. 5A and 5B, three or more lines may be formed.
【0053】さらに、上記第3の実施形態例では、図4
に示すように、電極パッド10は延長導体部16と分岐
導体部21に加えて、複数の微小導体ランド17が設け
られていたが、図5の(a)や(b)に示すように、微
小導体ランド17を設けずに、延長導体部16と分岐導
体部21により電極パッド10を構成するようにしても
よい。Further, in the third embodiment, FIG.
As shown in FIG. 5, the electrode pad 10 is provided with a plurality of minute conductor lands 17 in addition to the extension conductor 16 and the branch conductor 21, but as shown in FIGS. 5 (a) and 5 (b), The electrode pad 10 may be configured by the extension conductor 16 and the branch conductor 21 without providing the minute conductor land 17.
【0054】また、上記第3の実施形態例では、分岐導
体部21は延長導体部16の伸長方向に直行する方向に
分岐形成されていたが、図5の(b)に示すように、分
岐導体部21は延長導体部16から任意の方向に分岐形
成してもよい。In the third embodiment, the branch conductor 21 is formed in a direction perpendicular to the direction in which the extension conductor 16 extends, but as shown in FIG. The conductor portion 21 may be branched from the extension conductor portion 16 in any direction.
【0055】さらに、上記第1と第3の各実施形態例で
は、微小導体ランド17の形状は、方形状であったが、
図5の(c)に示すように、円形でもよいし、三角形
や、5角以上の多角形等でもよい。さらに、方形状の微
小導体ランド17と円形状の微小導体ランド17が混在
する等、各微小導体ランド17の形状は全て等しくしな
くてもよい。Further, in each of the first and third embodiments, the shape of the minute conductor land 17 is a square shape.
As shown in FIG. 5C, the shape may be a circle, a triangle, a polygon having five or more angles, or the like. Further, the shape of each minute conductor land 17 may not be all equal, for example, the square minute conductor land 17 and the circular minute conductor land 17 are mixed.
【0056】さらに、上記第1と第3の各実施形態例で
は、複数の微小導体ランド17は何れもほぼ等しい面積
を持つものであったが、図5の(c)に示すように、各
微小導体ランド17の面積は全て等しくしなくてもよ
い。Further, in each of the first and third embodiments, the plurality of minute conductor lands 17 have substantially the same area. However, as shown in FIG. The areas of the minute conductor lands 17 need not all be equal.
【0057】さらに、上記第2の実施形態例では、微小
開口部20の形状は方形状であったが、円形や、三角形
や、5角以上の多角形等でもよい。また、方形状の微小
開口部20と円形状の微小開口部20が混在する等、各
微小開口部20の形状は等しくしなくてもよい。さら
に、各微小開口部20の開口面積は全て等しくしなくて
よい。Further, in the above-described second embodiment, the shape of the minute opening 20 is a square, but may be a circle, a triangle, a polygon having five or more corners, or the like. In addition, the shapes of the minute openings 20 do not have to be equal, for example, the square minute openings 20 and the circular minute openings 20 are mixed. Further, the opening areas of the respective minute openings 20 do not need to be all equal.
【0058】さらに、上記各実施形態例では、ダイヤフ
ラム2が形成されている基板1部分の上側に絶縁部材3
と下部電極部4と圧電薄膜部材5と上部電極部6が順に
積層されて振動素子Pが形成されるダイヤフラム型の圧
電薄膜振動子を例にして説明したが、この発明は、図6
に示すように、上記振動素子Pが絶縁部材3を基板側に
向け基板1と空隙22を介して基板1に保持形成されて
いるブリッジ型の圧電薄膜振動子にも適用することがで
き、この場合にも上記各実施形態例と同様の効果を奏す
ることができる。Further, in each of the above embodiments, the insulating member 3 is provided above the portion of the substrate 1 on which the diaphragm 2 is formed.
The diaphragm type piezoelectric thin film vibrator in which the vibrating element P is formed by sequentially laminating the lower electrode portion 4, the piezoelectric thin film member 5, and the upper electrode portion 6 has been described.
As shown in FIG. 7, the vibration element P can also be applied to a bridge type piezoelectric thin film vibrator which is formed by holding the insulating member 3 toward the substrate 1 and holding the substrate 1 through the gap 22 with the substrate 1. In this case, the same effects as those of the above embodiments can be obtained.
【0059】[0059]
【発明の効果】電極パッドをランド構造の電極パッドに
構成したものや、導体部分が網状の電極パッドに構成し
たものや、延長導体部と1本以上の分岐導体部とにより
電極パッドを構成したものや、延長導体部と1本以上の
分岐導体部と複数の微小導体ランドとにより電極パッド
を構成したものや、延長導体部と複数の微小導体ランド
とにより電極パッドを構成したものにあっては、電極パ
ッド形成領域の全領域に亙り導体を形成して電極パッド
を構成するものよりも電極パッドの電極面積を大幅に削
減することができる。The electrode pad is constituted by an electrode pad having a land structure, the electrode pad is constituted by an electrode pad having a net-like conductor portion, or the electrode pad is constituted by an extended conductor portion and at least one branch conductor portion. And an electrode pad composed of an extended conductor, one or more branch conductors, and a plurality of minute conductor lands, and an electrode pad composed of an extension conductor and a plurality of minute conductor lands. Can significantly reduce the electrode area of the electrode pad as compared with the electrode pad formed by forming a conductor over the entire area of the electrode pad formation region.
【0060】このように、電極パッドの電極面積を削減
することができることによって、一方の電極パッドから
基板を通って他方の電極パッドに至る電流のサブ経路に
おけるインピーダンスを格段に大きくすることができ、
圧電薄膜振動子が持つ反共振周波数の電流通電時におい
て、一方の電極パッドから絶縁部材と下部電極部と圧電
薄膜部材と上部電極部との積層体を通って他方側の電極
パッドに至る電流のメイン経路におけるインピーダンス
よりも、上記電流のサブ経路のインピーダンスを大きく
することができる。As described above, since the electrode area of the electrode pad can be reduced, the impedance in the sub-path of the current from one electrode pad to the other electrode pad through the substrate can be significantly increased.
When current flows at the anti-resonance frequency of the piezoelectric thin-film vibrator, the current flowing from one electrode pad to the other electrode pad through the laminate of the insulating member, the lower electrode portion, the piezoelectric thin-film member, and the upper electrode portion is reduced. The impedance of the sub-path of the current can be made larger than the impedance of the main path.
【0061】このことから、通電電流の周波数によらず
に、通電電流の多くは上記メイン経路を通ってサブ経路
には流れないことから、反共振周波数の電流通電時にお
ける圧電薄膜振動子の周波数特性の悪化を防止すること
ができる。From this, most of the current does not flow through the main path to the sub-path irrespective of the frequency of the current flow. Deterioration of characteristics can be prevented.
【0062】また、電極パッドに接合形成される半田バ
ンプやワイヤボンド等の接続部材の接合位置ずれを考慮
して、電極パッド形成領域が設定され、その電極パッド
形成領域内に上記微小導体ランドや網状の導体や延長導
体部や分岐導体部等の導体を形成するので、接続部材を
ほぼ確実に上記導体に接合することができ、接続部材と
電極パッドの導通不良の問題発生を防止することができ
る。An electrode pad formation region is set in consideration of a displacement of a connection member such as a solder bump or a wire bond formed on the electrode pad. Since the conductors such as the mesh-shaped conductor, the extended conductor portion, and the branch conductor portion are formed, the connection member can be almost reliably joined to the conductor, and the problem of poor conduction between the connection member and the electrode pad can be prevented. it can.
【0063】さらに、本発明において特徴的な電極パッ
ドと接続部材の接合面積は、従来の電極パッドと接続部
材の接合面積よりも大幅に増加させることができること
から、接続部材の接合強度を高めることができる。Furthermore, the characteristic bonding area of the electrode pad and the connecting member in the present invention can be greatly increased as compared with the conventional bonding area of the electrode pad and the connecting member. Can be.
【0064】さらに、電極パッドの形成パターンを変更
するだけで従来と同様の製造工程で、本発明の圧電薄膜
振動子を製造することができるので、圧電薄膜振動子の
製造工程の煩雑化を回避することができ、また、歩留ま
りの悪化も回避することができる。Further, the piezoelectric thin-film vibrator of the present invention can be manufactured in the same manufacturing process as the conventional one only by changing the formation pattern of the electrode pads, so that the manufacturing process of the piezoelectric thin-film vibrator is not complicated. It is also possible to avoid a decrease in yield.
【図1】第1の実施形態例において特徴的な電極パッド
の形態を示すモデル図である。FIG. 1 is a model diagram showing a characteristic form of an electrode pad in the first embodiment.
【図2】図1に示す形態の電極パッドと接続部材との接
合強度の向上効果を示す説明図である。FIG. 2 is an explanatory view showing the effect of improving the bonding strength between the electrode pad of the embodiment shown in FIG. 1 and a connecting member.
【図3】第2の実施形態例において特徴的な電極パッド
の形態を示すモデル図である。FIG. 3 is a model diagram showing a characteristic form of an electrode pad in the second embodiment.
【図4】第3の実施形態例において特徴的な電極パッド
の形態を示すモデル図である。FIG. 4 is a model diagram showing a characteristic form of an electrode pad in a third embodiment.
【図5】その他の実施形態例を示す説明図である。FIG. 5 is an explanatory diagram showing another embodiment.
【図6】さらに、その他の実施形態例を示す説明図であ
る。FIG. 6 is an explanatory view showing still another embodiment.
【図7】圧電薄膜振動子内の電流の通電経路の一例を示
すモデル図である。FIG. 7 is a model diagram showing an example of a current flow path in a piezoelectric thin-film vibrator.
【図8】圧電薄膜振動子内の電流の通電経路の等価回路
を示す回路図である。FIG. 8 is a circuit diagram showing an equivalent circuit of a current flow path in the piezoelectric thin-film vibrator.
【図9】圧電薄膜振動子の周波数特性の一例を示すグラ
フである。FIG. 9 is a graph showing an example of a frequency characteristic of a piezoelectric thin film vibrator.
【図10】提案例を示す説明図である。FIG. 10 is an explanatory diagram showing a proposal example.
【図11】従来の圧電薄膜振動子の一例を示すモデル図
である。FIG. 11 is a model diagram showing an example of a conventional piezoelectric thin film vibrator.
【図12】図11に示すA−A部分の断面を示す断面図
である。FIG. 12 is a sectional view showing a section taken along the line AA shown in FIG. 11;
1 基板 3 絶縁部材 4 下部電極部 5 圧電薄膜部材 6 上部電極部 7 下部引き出し電極部 8 上部引き出し電極部 10 電極パッド 16 延長導体部 17 微小導体ランド 18 導体部分 20 微小開口部 21 分岐導体部 DESCRIPTION OF SYMBOLS 1 Substrate 3 Insulating member 4 Lower electrode part 5 Piezoelectric thin film member 6 Upper electrode part 7 Lower extraction electrode part 8 Upper extraction electrode part 10 Electrode pad 16 Extension conductor part 17 Micro conductor land 18 Conductor part 20 Micro opening 21 Branch conductor part
Claims (5)
上部電極部とが順に積層形成された積層体が基板に上記
絶縁部材を基板側に向けて保持形成され、上記下部電極
部には下部引き出し電極部が、上記上部電極部には上部
引き出し電極部がそれぞれ導通接続され、上記下部引き
出し電極部と上部引き出し電極部はそれぞれ電極パッド
に導通接続されている圧電薄膜振動子において、前記各
電極パッドの少なくとも一方は、その電極パッド形成領
域内に複数の微小導体ランドが互いに間隙を介して点在
配置されていることを特徴とする圧電薄膜振動子。A laminated body in which an insulating member, a lower electrode portion, a piezoelectric thin film member, and an upper electrode portion are sequentially laminated is formed on a substrate by holding the insulating member toward the substrate, and the lower electrode portion has In a piezoelectric thin-film vibrator in which a lower extraction electrode portion is electrically connected to an upper extraction electrode portion on the upper electrode portion, and the lower extraction electrode portion and the upper extraction electrode portion are electrically connected to an electrode pad, respectively. A piezoelectric thin-film vibrator characterized in that at least one of the electrode pads has a plurality of minute conductor lands interspersed with each other with a gap in the electrode pad formation region.
上部電極部とが順に積層形成された積層体が基板に上記
絶縁部材を基板側に向けて保持形成され、上記下部電極
部には下部引き出し電極部が、上記上部電極部には上部
引き出し電極部がそれぞれ導通接続され、上記下部引き
出し電極部と上部引き出し電極部はそれぞれ電極パッド
に導通接続されている圧電薄膜振動子において、前記各
電極パッドの少なくとも一方は、その導体部分に複数の
微小開口部が互いに間隙を介して点在形成されているこ
とを特徴とする圧電薄膜振動子。2. A laminated body in which an insulating member, a lower electrode portion, a piezoelectric thin film member, and an upper electrode portion are sequentially laminated and formed on a substrate while holding the insulating member toward the substrate side. In a piezoelectric thin-film vibrator in which a lower extraction electrode portion is electrically connected to an upper extraction electrode portion on the upper electrode portion, and the lower extraction electrode portion and the upper extraction electrode portion are electrically connected to an electrode pad, respectively. A piezoelectric thin-film vibrator characterized in that at least one of the electrode pads has a plurality of minute openings formed in a conductor portion thereof interspersed with a gap therebetween.
上部電極部とが順に積層形成された積層体が基板に上記
絶縁部材を基板側に向けて保持形成され、上記下部電極
部には下部引き出し電極部が、上記上部電極部には上部
引き出し電極部がそれぞれ導通接続され、上記下部引き
出し電極部と上部引き出し電極部はそれぞれ電極パッド
に導通接続されている圧電薄膜振動子において、前記各
電極パッドの少なくとも一方は、上記引き出し電極部か
ら電極パッド形成領域内に延長形成された延長導体部
と、該導体部から分岐形成された1本以上の分岐導体部
とを有して構成されていることを特徴とする圧電薄膜振
動子。3. A laminated body in which an insulating member, a lower electrode portion, a piezoelectric thin film member, and an upper electrode portion are sequentially laminated is formed on a substrate by holding the insulating member toward the substrate side. In a piezoelectric thin-film vibrator in which a lower extraction electrode portion is electrically connected to an upper extraction electrode portion on the upper electrode portion, and the lower extraction electrode portion and the upper extraction electrode portion are electrically connected to an electrode pad, respectively. At least one of the electrode pads is configured to have an extended conductor portion extending from the extraction electrode portion into the electrode pad formation region and one or more branch conductor portions branched from the conductor portion. A piezoelectric thin-film vibrator.
上部電極部とが順に積層形成された積層体が基板に上記
絶縁部材を基板側に向けて保持形成され、上記下部電極
部には下部引き出し電極部が、上記上部電極部には上部
引き出し電極部がそれぞれ導通接続され、上記下部引き
出し電極部と上部引き出し電極部はそれぞれ電極パッド
に導通接続されている圧電薄膜振動子において、前記各
電極パッドの少なくとも一方は、上記引き出し電極部か
ら電極パッド形成領域内に延長形成された延長導体部
と、該導体部から分岐形成された1本以上の分岐導体部
と、上記延長導体部と分岐導体部の形成部分を除いた電
極パッド形成領域内に互いに間隙を介して点在配置され
る複数の微小導体ランドとを有して構成されていること
を特徴とする圧電薄膜振動子。4. A laminate in which an insulating member, a lower electrode portion, a piezoelectric thin film member, and an upper electrode portion are sequentially laminated is formed on a substrate by holding the insulating member toward the substrate, and the lower electrode portion has In a piezoelectric thin-film vibrator in which a lower extraction electrode portion is electrically connected to an upper extraction electrode portion on the upper electrode portion, and the lower extraction electrode portion and the upper extraction electrode portion are electrically connected to an electrode pad, respectively. At least one of the electrode pads includes an extended conductor portion extending from the lead electrode portion into the electrode pad formation region, one or more branch conductor portions branched from the conductor portion, and a branch portion extending from the extension conductor portion. A piezoelectric thin film comprising a plurality of minute conductor lands interspersed with a gap therebetween in an electrode pad formation region excluding a conductor formation portion. Vibrator.
上部電極部とが順に積層形成された積層体が基板に上記
絶縁部材を基板側に向けて保持形成され、上記下部電極
部には下部引き出し電極部が、上記上部電極部には上部
引き出し電極部がそれぞれ導通接続され、上記下部引き
出し電極部と上部引き出し電極部はそれぞれ電極パッド
に導通接続されている圧電薄膜振動子において、前記各
電極パッドの少なくとも一方は、上記引き出し電極部か
ら電極パッド形成領域内に延長形成された延長導体部
と、この延長導体部の形成部分を除いた電極パッド形成
領域内に互いに間隙を介して点在配置される複数の微小
導体ランドとを有して構成されていることを特徴とする
圧電薄膜振動子。5. A laminate in which an insulating member, a lower electrode portion, a piezoelectric thin film member, and an upper electrode portion are sequentially laminated is formed on a substrate by holding the insulating member toward the substrate side, and the lower electrode portion has In a piezoelectric thin-film vibrator in which a lower extraction electrode portion is electrically connected to an upper extraction electrode portion on the upper electrode portion, and the lower extraction electrode portion and the upper extraction electrode portion are electrically connected to an electrode pad, respectively. At least one of the electrode pads is interspersed with a gap between the extension conductor portion extending from the extraction electrode portion into the electrode pad formation region and the electrode pad formation region excluding the portion where the extension conductor portion is formed. A piezoelectric thin film vibrator comprising: a plurality of minute conductor lands to be arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10021395A JPH11205074A (en) | 1998-01-19 | 1998-01-19 | Piezoelectric thin film vibrator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10021395A JPH11205074A (en) | 1998-01-19 | 1998-01-19 | Piezoelectric thin film vibrator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11205074A true JPH11205074A (en) | 1999-07-30 |
Family
ID=12053883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10021395A Pending JPH11205074A (en) | 1998-01-19 | 1998-01-19 | Piezoelectric thin film vibrator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11205074A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020158798A1 (en) * | 2019-01-31 | 2020-08-06 | 株式会社村田製作所 | Elastic wave device |
| CN111615755A (en) * | 2018-12-25 | 2020-09-01 | 株式会社村田制作所 | Vibration structure |
| US11352702B2 (en) | 2015-10-14 | 2022-06-07 | Hexigone Inhibitors Ltd | Corrosion inhibitor |
-
1998
- 1998-01-19 JP JP10021395A patent/JPH11205074A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11352702B2 (en) | 2015-10-14 | 2022-06-07 | Hexigone Inhibitors Ltd | Corrosion inhibitor |
| CN111615755A (en) * | 2018-12-25 | 2020-09-01 | 株式会社村田制作所 | Vibration structure |
| CN111615755B (en) * | 2018-12-25 | 2023-06-16 | 株式会社村田制作所 | Vibrating structure |
| WO2020158798A1 (en) * | 2019-01-31 | 2020-08-06 | 株式会社村田製作所 | Elastic wave device |
| KR20210097789A (en) * | 2019-01-31 | 2021-08-09 | 가부시키가이샤 무라타 세이사쿠쇼 | seismic device |
| CN113366763A (en) * | 2019-01-31 | 2021-09-07 | 株式会社村田制作所 | elastic wave device |
| JPWO2020158798A1 (en) * | 2019-01-31 | 2021-10-21 | 株式会社村田製作所 | Elastic wave device |
| US20210351758A1 (en) * | 2019-01-31 | 2021-11-11 | Murata Manufacturing Co., Ltd. | Acoustic wave device |
| CN113366763B (en) * | 2019-01-31 | 2024-05-28 | 株式会社村田制作所 | Elastic wave device |
| US12047052B2 (en) | 2019-01-31 | 2024-07-23 | Murata Manufacturing Co., Ltd. | Acoustic wave device |
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