JPH11204439A - Method of manufacturing hyperfine periodic structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a hyperfine periodic structure capable of realizing an atomic level periodic structure with enough accuracy. SOLUTION: A two-dimensional interference image is formed on the surface of a substrate by projecting either coherent radiation beams, laser beams, or coherent electron beams on the surface of a substrate 7 from a plurality of directions and a material 24 produced through a reaction of material molecules or material atoms by projecting material molecules or material atoms is selectively deposited on only the position of the above two-dimensional coherent image on the substrate 7.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for economically manufacturing a two-dimensional hyperfine periodic structure.

[0002]

2. Description of the Related Art The realization of a process for forming a two-dimensional ultra-miniaturized periodic structure on a substrate is necessary for realizing an integrated circuit incorporating an atomic level device and an optical device which will be responsible for the next generation information equipment industry. It is essential. Regarding the thickness direction, atomic layer epitaxy, atomic layer etching, etc.
The process can be controlled at the atomic layer level, but the in-plane position selectivity has not been obtained.

[0003] Today, in order to perform ultra-fine in-plane processing of nanometer size, a method of directly drawing on a substrate using an electron beam is widely used. If this method is used to the limit, fine patterning of about 10 nanometers, that is, up to about 100 atoms can be achieved. However, it takes a very long time to perform drawing by scanning an electron beam.

[0004] If a focused ion beam is used, it is possible to draw by the same method as in the case of an electron beam. An advantage of this method is that doping and etching can be directly and selectively performed without using a resist. But,
This method also has a problem that it takes much time similarly to the case of the electron beam lithography method and also causes significant irradiation damage.

[0005] Instead of the conventional lithography using light,
A method using X-rays has also been proposed. This method eliminates a time problem because it is a batch exposure. However, because of the transfer technique, there is a problem that the size of the pattern is determined by the precision of the mask.

Further, as a technique for controlling the position of an ultrafine atomic level structure within a plane by controlling the position thereof, a crystal growth technique utilizing an atomic step formed on a slightly inclined crystal surface, or a high index plane is utilized. A crystal growth technique or a method that uses a facet plane combined with selective growth using a mask pattern is also being studied, but the position and size at the atomic level cannot be determined accurately, and there is no practically usable technique. It is far from the present situation.

Further, a method of performing atomic manipulation and processing using a scanning tunneling microscope or an atomic force microscope probe has been proposed, and a report has been made at a laboratory level. If this method is used, accurate processing at the atomic level is also possible.
However, this method has a problem that the productivity is essentially lower than that of the electron beam exposure method, and the method cannot be put to practical use.

[0008]

The foregoing has provided an overview of the current state of in-plane ultrafine processing and atomic level ultrafine processing technology. The future ultra-fine processing technology is naturally required to realize accurate position control, but at the same time, it is indispensable that the cost and time fall within industrially reasonable ranges. Conventional electron beam or ion beam scanning, or direct drawing using a scanning tunneling microscope or an atomic force microscope, can be processed accurately at each accuracy, but these methods are Since the method is essentially sequential drawing, if the above method is applied to, for example, an integrated circuit in which millions of devices are mounted per chip, it takes much time to withstand industrial use.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a method for manufacturing an ultrafine periodic structure having sufficient accuracy.

[0010]

In order to solve the above-mentioned problems, a method of manufacturing an ultrafine periodic structure according to claim 1 of the present invention is directed to any one of a coherent radiation, a laser beam, and a coherent electron beam ( (Hereinafter, sometimes referred to as a coherent beam) onto the substrate surface from a plurality of directions to form a two-dimensional interference image on the substrate surface and simultaneously irradiate the source molecules or atoms with the source molecules or atoms. Reacts with the material on the substrate.
It is characterized by selectively depositing only at the position where the two-dimensional interference image exists.

That is, the present invention utilizes the interference caused by irradiating the coherent beam from a plurality of directions and the direct interaction between the molecular and atomic beams of the raw material. First, a two-dimensional interference image is formed by irradiating the substrate with a coherent beam from a plurality of directions. This means that the coherent beam is radiated on the two-dimensionally periodically arranged positions. In this case, if the wavelength of the coherent beam is reduced to the level of the atomic size, the period of the arrangement can be reduced to the level of the atomic size and sufficient accuracy can be provided.

Therefore, a two-dimensional interference image is formed on the substrate surface by irradiating a coherent beam, and at the same time, the entire surface of the substrate is irradiated with a molecular beam or an atomic beam of the raw material. A visible light laser having a wavelength of about 0.5 μm has an energy of about 2 eV corresponding to the binding energy of a crystal, and can promote a chemical reaction. A shorter wavelength coherent beam, for example, a radiation of 1 nanometer wavelength,
It has an energy of about 1 keV, which is high enough to promote the inner-shell excitation reaction.

[0013] Deposition does not occur with molecular beams or atomic beams alone, but the system conditions are set such that deposition is caused by the decomposition of source molecules or the reaction between substrate atoms and source atoms when assisted by a coherent beam. When the arrangement is completed, the material is selectively deposited at the position where the periodically arranged interference images are present, and an ultrafine periodic structure in which islands of the material are two-dimensionally periodically arranged can be formed.

According to a second aspect of the present invention, there is provided a method of manufacturing an ultrafine periodic structure.
By irradiating the substrate surface with any of coherent radiation light, laser light or coherent electron beam from a plurality of directions to form a two-dimensional interference image on the substrate surface, and simultaneously irradiating the raw material molecules or raw material atoms, A material obtained by reacting a source molecule or a source atom is selectively deposited only on a position where the two-dimensional interference image does not exist on the substrate. That is, depending on the type of the raw material, the material and the substrate, the deposition of the raw material can be caused only at the position where the two-dimensional interference image does not exist, contrary to the first aspect.

According to a third aspect of the present invention, there is provided a method of manufacturing a hyperfine periodic structure,
By irradiating the substrate surface with any of coherent radiation, laser light, or coherent electron beam from multiple directions to form a two-dimensional interference image on the substrate surface, and simultaneously irradiating source molecules or atoms, the substrate The raw material molecules or the raw material atoms react at the position where the two-dimensional interference image exists and the position where the two-dimensional interference image does not exist, and different materials having different physical properties are deposited. . That is, if the conditions of the system are adjusted so that materials having different physical properties are deposited on the substrate with and without coherent beam assist, a thin film in which different materials are periodically arranged can be formed. .

According to a fourth aspect of the present invention, there is provided a method for manufacturing a hyperfine periodic structure.
By irradiating the substrate surface with any of coherent radiation, laser light or coherent electron beam from multiple directions to form a two-dimensional interference image on the substrate surface,
The substrate material is selectively etched only at the position where the two-dimensional interference image exists on the substrate, and holes are two-dimensionally periodically arranged on the substrate. That is, when a hole is formed in the surface of a certain kind of substrate material by etching, as described above, only the substrate surface is irradiated with a coherent beam such as radiation light, and the ultrafine periodic structure in which holes are periodically arranged in a two-dimensional manner. Can be formed.

According to a fifth aspect of the present invention, there is provided a method of manufacturing an ultrafine periodic structure, comprising:
By irradiating the substrate surface with coherent radiation light, laser light or coherent electron beam from multiple directions to form a two-dimensional interference image on the substrate surface, and simultaneously irradiating a reactive gas, the substrate Reacting the reactive gas with the substrate material only at the position where the above two-dimensional interference image exists, selectively etching the substrate material, and periodically arranging holes on the substrate two-dimensionally. Is what you do.

That is, a two-dimensional interference image is formed on the substrate surface by irradiating a coherent beam, and at the same time, a periodically reactive interference image is formed by irradiating a gas having reactivity with the substrate material onto the substrate surface. Etching occurs selectively at the positions where the holes are formed, and an ultrafine periodic structure in which holes are periodically arranged two-dimensionally can be formed.

The method for manufacturing an ultrafine periodic structure according to claim 6 is
After the holes are two-dimensionally and periodically arranged on the substrate by the manufacturing method according to claim 4 or 5, the substrate is irradiated with a source molecule or a source atom, whereby the source molecule or the source atom reacts. Is selectively deposited only at the positions where the holes exist. That is, by irradiating a molecular beam or an atomic beam of a raw material onto a substrate having holes periodically arranged on the surface thereof, deposition is performed while selectively generating growth nuclei at the positions of the holes, and an island of material is formed. An ultrafine periodic structure two-dimensionally arranged periodically can be formed.

According to a seventh aspect of the present invention, there is provided a method of manufacturing an ultrafine periodic structure.
After a resist is formed on a substrate or a thin film formed on the substrate, any one of coherent radiation, laser light, or a coherent electron beam is irradiated on the resist from a plurality of directions, and the resist surface is two-dimensionally irradiated. Exposure is performed while forming an interference image, and subsequently, the resist is developed to remove either the exposed or unexposed portions.

That is, the present invention can also be used in the case of manufacturing an ultrafine periodic structure using a resist. In this case, exposure of the resist is performed by a two-dimensional interference image of the coherent beam. Can be. Also in this case, if the wavelength of the coherent beam is shortened to about 10 nanometers, which is the resolution limit of the resist, a finer pattern can be exposed as compared with the exposure using a conventional mask. When a resist is formed directly on the substrate and exposed, for example, holes are two-dimensionally arranged on the substrate using the ultrafine resist pattern remaining after development, or the substrate is exposed using the resist pattern. A desired material can be deposited on the substrate so as to be periodically arranged in a two-dimensional manner. When a resist is formed on a thin film formed on a substrate and exposed, a resist pattern remaining after development is used. An ultrafine periodic structure can be formed on the thin film.

[0022] The method of manufacturing an ultrafine periodic structure according to claim 8 is as follows.
After coating the surface of the substrate or the thin film formed on the substrate with a resist material which is easy to evaporate, such as arsenic, selenium, sulfur, etc., any of coherent radiation, laser light or coherent electron beam is applied from a plurality of directions. By irradiating the resist material to form a two-dimensional interference image on the surface of the resist material and performing exposure, the resist material is removed only at the position where the two-dimensional interference image exists. is there. Here, since a material that easily evaporates was used as the resist material, the resist material was evaporated and removed at the position where the two-dimensional interference image exists only by forming a two-dimensional interference image of the coherent beam on the resist. can do. In this case, since the resolution limit of the resist is shorter than in the case of claim 7, a finer pattern can be exposed.

[0023]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows an apparatus for manufacturing an ultrafine periodic structure used in the present embodiment. This apparatus includes a coherent beam supply device 1, a gas supply device 2, a substrate exchange chamber 3, and a reaction chamber 4. The coherent beam supply device 1 is configured to monochromatize coherent radiation emitted from a radiation light source 5 such as a synchrotron radiation device with a filter 6 and then supply the monochromatic radiation to a reaction chamber 4.

The gas supply device 2 supplies a raw material gas (molecular beam or atomic beam of the raw material) and an etching gas to the reaction chamber 4. The substrate exchange chamber 3 is provided for introducing the substrate 7 into the reaction chamber 4 without breaking the vacuum of the reaction chamber 4.
The reaction chamber 4 and the substrate exchange chamber 3 are separated by a gate valve 8. The substrate exchange chamber 3 and the reaction chamber 4 are provided with independent vacuum exhaust devices 9 and 10, respectively.

The reaction chamber 4 is kept in a vacuum state by a vacuum evacuation device 10 at all times. The substrate 7 is mounted on the substrate holder 11 in the reaction chamber 4. A substrate heater 12 is mounted below the substrate holder 11, and heats the substrate 7 as necessary. Note that, instead of providing the substrate heater 12, heating may be performed by irradiating infrared rays or the like from a position away from the substrate holder 11.

The radiated light introduced into the reaction chamber 4 from the radiated light source 5 via the filter 6 is applied to the half mirrors 13 and 1.
The substrate 7 is divided into three or more, for example, four parts by using the light guides 4 and 15, and is irradiated onto the substrate 7 from a plurality of directions, for example, four directions via mirrors 16, 17, 18 and 19.
The half mirror 13 and the half mirror 15 and the half mirror 1
4 and mirror 17, and half mirror 15 and mirror 1
Mirrors 20, 21, and 22 are arranged between the nine. If the direction of irradiating the substrate 7 with the radiated light is always constant, the half mirrors 13 to 15 and the mirrors 16 to 22
May be located outside the reaction chamber 4.

For example, when radiating light from four directions A to D through four mirrors 16 to 19 to form a two-dimensional interference image having a square lattice on the substrate 7, As shown in FIG. 2, the directions are set to have an angular interval of 90 ° when viewed from above. The tilt angles in the vertical plane of the emitted light in the four directions are made equal to each other, corresponding to the lattice spacing of the periodic structure to be manufactured. When the waves from the four directions interfere with each other, an interference image having a square lattice and two-dimensionally periodically arranged is formed.

FIG. 3 shows that the substrate 7 is irradiated with radiation in three directions E to form a two-dimensional interference image having a hexagonal lattice.
G to G, and irradiates from directions forming an angle of 120 ° with respect to each other.
The tilt angles of the three directions of radiation in the vertical plane are made equal to one another, corresponding to the lattice spacing of the periodic structure to be produced. In this case, the emitted lights from three directions interfere with each other,
A two-dimensionally periodic interference image having a hexagonal lattice is formed. In the present invention, the two-dimensional interference image formed on the substrate 7 is not limited to an image having a square lattice or an image having a hexagonal lattice. Number of directions to irradiate synchrotron radiation,
By changing the angle viewed from above and the tilt angle in the vertical plane, it is possible to form a two-dimensional interference image having an arbitrary periodic arrangement.

In FIG. 1, a raw material gas (molecular beam or atomic beam of the raw material) and an etching gas introduced into a reaction chamber 4 from a gas supply device 2 are supplied to a substrate 7 by a gas nozzle 23.
The top is illuminated.

When a desired material is periodically arranged two-dimensionally on the substrate 7 and deposited, as shown in FIG. 4A, a plurality of materials are placed on the substrate 7 in the reaction chamber 4 as described above. At the same time, the raw material molecules or raw material atoms are irradiated from the gas nozzle 23. The radiated light travels in one direction (for example, X direction) on the surface of the substrate 7 as shown in FIG.
As shown in (b), the emitted light from two directions interferes with each other, so that the intensity of the interference image periodically increases and decreases, and the same applies to the other direction of the surface of the substrate 7 (for example, the Y direction). The intensity of the interference image periodically increases and decreases. As a result, a two-dimensional interference image is periodically arranged on the substrate 7, and as shown in FIG. 7, the material 24 is deposited only at the position where the two-dimensional interference image exists. Thus, islands of the material 24 are two-dimensionally periodically arranged on the substrate 7.

In the above description, the material 24 is deposited only at the position where the interference image of the radiated light exists (the position where the intensity of the interference image is higher than a certain threshold value), and so-called selective growth occurs. Depending on the type of the raw material and the material 24 and various conditions, the deposition rate increases at the position where the interference image of the radiated light exists. Therefore, the material 24 is deposited thickly at the position where the interference image exists, and at the position where the interference image does not exist. The material 24 may be deposited thinly (at a position where the intensity of the interference image is lower than a certain threshold). Alternatively, there is a case where the material 24 is deposited only at a position where the interference image of the emitted light does not exist (a position where the intensity of the interference image is lower than a certain threshold value), and so-called reverse selective growth occurs.

Next, Table 1 shows the relationship between the type of the substrate 7, the raw material (raw material molecule or raw material atom) and the material 24, and the temperature conditions in various embodiments corresponding to the first and second aspects of the present invention. . The remarks column indicates that the selective growth, the reverse selective growth or the increase in the deposition rate, the deposition of the atomic layer, and the like are observed.

For example, the ninth embodiment will be described.
SiO 7 as an amorphous substrate as the plate 7 _TwoReaction using substrate
Synchrotron radiation on the substrate 7 while maintaining the temperature in the chamber 4 at 100 ° C.
At the same time as dimethyl aluminum
Irradiation of mu hydride as shown in FIG.
The position where the two-dimensional interference image exists on the substrate 7 (the position of the interference image)
Material made of Al (aluminum) at high strength position)
24 were periodically arranged two-dimensionally. About other embodiments
Is as shown in Table 1. In this embodiment,
The ultrafine periodic structure can be, for example, a single-electron transistor or
It can be applied to light emitting devices with silicon fine particles
You.

[0034]

[Table 1]

Next, a second embodiment of the present invention will be described. The second embodiment corresponds to the third aspect, and as shown in FIG.
In the case where the material 25 is deposited by (organic metal molecular beam epitaxy), for example, by irradiating laser light from a plurality of three or more directions, the intensity of the interference image of the laser light shown in FIG. At a position higher than the value (the position where the interference image exists), the composition of the material 25 changes to generate a different kind of material 26, and as shown in FIG.
An ultrafine periodic structure is formed in which a heterogeneous material 26 is periodically arranged two-dimensionally in a thin film made of. In this case, a laser light source such as an Ar laser can be used instead of the radiation light source 5 in FIG.

As a specific embodiment, for example, InP
While irradiating a laser beam from four directions with an Ar laser on a substrate 7 made of GaAs and maintaining the temperature at 510 ° C., TEGa (triethylgallium) and TMIn were simultaneously used as raw materials.
(Trimethylindium), and pyrolyzed AsH ₃
Is irradiated, InGaAs grows as the material 25, but at a position where the intensity of the interference image of the laser light is high, InGaAs is grown.
The GaAs was changed to InAs, and an ultrafine periodic structure was formed in which the material 26 made of InAs was periodically arranged two-dimensionally in the material 25 made of InGaAs.

As another embodiment, as a raw material, TEG is formed on a substrate 7 made of InP and maintained at a temperature of 510 ° C.
a, TMIn, pyrolyzed PH ₃ , and pyrolyzed A
When irradiated with sH ₃ , InGaAs was used as the material 25.
Although P grows, InGaAsP changes to InAsP at a position where the intensity of the interference image of the laser beam is high.

Next, a third embodiment of the present invention will be described. This embodiment corresponds to claims 4, 5 and 6, and as shown in FIG. 8 (a), radiated light is applied to the surface of a substrate 7 made of a certain material in the first embodiment. When irradiation is performed from three directions or more in the same manner as in the embodiment, the surface of the substrate 7 is etched at a position where the intensity of the interference image of the radiated light shown in (b) is high (a position where the interference image exists), and a hole 28 is formed. The holes 28 are two-dimensionally periodically arranged on the substrate 7 as shown in FIG. In this case, the etching rate can be improved by irradiating the gas having reactivity with the material of the substrate 7 simultaneously with the irradiation of the radiation light.

As a specific embodiment, for example, SiO 2
_{When the} substrate 7 made of ₂ was irradiated with radiated light from three or more directions and the substrate 7 was irradiated with SF ₆ gas, the surface of the substrate 7 was etched. Further, the substrate 7 was etched only by irradiating the emitted light without using the SF ₆ gas. As another embodiment, when the substrate 7 made of silicon is used and irradiated with radiation in a mixed gas atmosphere of SF ₆ and Ar excited by microwaves, the etching rate is reduced by one in comparison with the case where no radiation is irradiated. It was accelerated by an order of magnitude.

As another embodiment, for example, (11
1) A structure in which holes 28 are two-dimensionally periodically arranged as shown in FIG. 9 is formed by irradiating a laser beam from three or more directions from an ultraviolet laser while supplying chlorine to a gallium phosphorus substrate having an A surface on the surface. did. Here, gallium phosphorus (1
11) The A plane is a plane where gallium atoms are bonded to the three lower phosphorus atoms. Also, instead of the gallium phosphorus substrate,
Even when a gallium arsenide substrate having a (111) A surface on its surface is used, holes can be periodically arranged two-dimensionally on the substrate.

As shown in FIGS. 10 and 11,
When a material is irradiated to the substrate 7 having the holes 28 two-dimensionally and periodically arranged on the surface thereof with the holes 28 as growth nuclei, selective growth occurs due to the difference in the plane orientation between the holes 28 and other places. An ultrafine periodic structure in which islands of the material 30 are periodically arranged two-dimensionally at the positions of the holes 28 can be formed.

As a specific example, for example, (11
1) After arranging the holes 28 two-dimensionally and periodically on the gallium phosphide substrate having the A surface on the surface by the above method,
By alternately supplying trimethylgallium and arsine at 0 ° C. to grow the atomic layer, as shown in FIG.
Gallium arsenide material 30 only in the position where 8 exists
Formed an island.

Next, a fourth embodiment of the present invention will be described. In this embodiment, as shown in FIG. 12, when a resist 31 is formed on a substrate 7 and the resist 31 is exposed, a coherent radiation A two-dimensional interference image is formed by irradiating light, laser light, or a coherent electron beam from a plurality of three or more directions. Thus, the resist 31 is exposed at the position 31a where the intensity of the two-dimensional interference image is higher than a certain threshold. After that, when, for example, only the exposed portion 31a of the resist 31 is removed by a normal developing process,
As shown in FIG. 13, holes 32 are formed in the exposed portions 31a of the resist 31, and these holes 32 are two-dimensionally and periodically arranged.

Also in this case, by shortening the wavelength of the coherent beam to about 10 nanometers, which is the resolution limit of the resist, a finer pattern can be exposed than in the case of performing exposure using a conventional mask. The holes 32 formed in the resist 31 after the development are also very fine. Note that the resist 31 in which the holes 32 are formed is formed.
By processing into a substrate 7 using
The holes 28 similar to those shown in FIG. 9 can be two-dimensionally arranged at the top. Alternatively, the resist 31 in which the hole 32 is formed
By irradiating the substrate 7 with source atoms or source molecules from above, the material can be deposited on the substrate 7 only at the positions where the holes 32 are formed. When a thin film is formed on the substrate 7 to form an ultra-fine two-dimensional periodic structure on the thin film, a resist is formed on the thin film and the resist is exposed on the two-dimensional interference image. Good.

As a specific example in which a resist is used, polymethyl methacrylate, which is a resist material, was applied on a silicon substrate by a spinner, and exposure was performed by irradiating coherent radiation from three or more directions. By further developing, as shown in FIG. 13, it was possible to form an ultrafine structure in which the holes 32 were two-dimensionally periodically arranged on the resist 31. If a material such as arsenic, selenium, or sulfur that easily evaporates is used as a resist material, only a two-dimensional interference image by a coherent beam is formed.
Since the resist material evaporates at the position where the two-dimensional interference image exists, the developing step is not required.

[0046]

As described above, according to the first aspect of the present invention,
According to the method for producing a hyperfine periodic structure, a two-dimensional interference image is formed by irradiating a coherent beam on a substrate from a plurality of directions by utilizing the interference of a coherent beam and the direct interaction between molecular and atomic beams of a raw material. At the same time as imaging, by irradiating the molecular beam or atomic beam of the raw material on the entire surface of the substrate,
The deposition of the material occurs selectively at the position where the periodically arranged interference images exist, and an ultrafine periodic structure in which islands of the material are two-dimensionally periodically arranged can be formed.

According to the second aspect of the present invention, a material is selectively deposited only at a position where the two-dimensional interference image does not exist, according to a raw material, a material, a type of a substrate, and other conditions. As a result, it is possible to form an ultrafine periodic structure in which islands of the material are arranged two-dimensionally and periodically.

According to the third aspect of the present invention, the position where the interference image exists on the substrate does not exist due to the interaction between the coherent beam interference image and the molecular / atomic beam of the raw material. Different materials can be deposited at different locations.

According to the method of manufacturing an ultrafine periodic structure according to the fourth aspect, by forming an interference image of a coherent beam on the surface of the substrate, the substrate material is selectively etched only at the position where the interference image exists. Thus, an ultrafine periodic structure in which holes are periodically arranged two-dimensionally can be formed.

According to a fifth aspect of the present invention, in the manufacturing method of the fourth aspect, a gas (etching gas) having reactivity with the substrate is irradiated simultaneously with the irradiation of the coherent beam. The etching rate can be improved.

According to a sixth aspect of the present invention, the holes are two-dimensionally arranged on the substrate by the method of the fourth or fifth aspect, and then the raw material molecules are provided on the substrate. Alternatively, by irradiating the source atoms, the material obtained by the reaction of the source molecules or the source atoms can be selectively deposited only at the positions where the holes exist, whereby the islands of the material are two-dimensionally formed. An ultrafine periodic structure having a periodic arrangement can be formed.

According to the seventh aspect of the present invention, when the periodic structure is formed on the substrate or the thin film formed on the substrate using the resist, the resist is exposed to the coherent beam. Since the two-dimensional interference image is used, an ultrafine pattern can be formed on the resist, and an ultrafine periodic structure can be formed on the substrate or the thin film.

According to the method of manufacturing an ultra-fine periodic structure of the present invention, a resist material having a shorter resolution limit than that of the resist used in the manufacturing method of the present invention and which is easy to evaporate, such as arsenic, selenium, or sulfur, is used. Since it is used, a finer periodic structure can be formed as compared with the manufacturing method of the seventh aspect.

[Brief description of the drawings]

FIG. 1 is an explanatory view showing an apparatus for manufacturing an ultrafine periodic structure used in a first embodiment of the present invention.

FIG. 2 is a plan view showing a light irradiation direction when light is irradiated on the substrate from four directions in the first embodiment.

FIG. 3 is a plan view showing a light irradiation direction when the substrate is irradiated with light from three directions.

FIG. 4 is a schematic front view showing a state of depositing a material on a substrate in the first embodiment together with the intensity of an interference image.

FIG. 5 is a schematic perspective view showing a state where a material is deposited on a substrate in the first embodiment.

FIG. 6 is a schematic front view showing a state of depositing a material on a substrate together with the intensity of an interference image according to the second embodiment of the present invention.

FIG. 7 is a schematic cutaway perspective view showing a state in which a material is deposited on a substrate in the second embodiment.

FIG. 8 is a schematic front view showing a state of making a hole on a substrate together with the intensity of an interference image in the third embodiment of the present invention.

FIG. 9 is a schematic cutaway perspective view showing a state in which a hole is formed in a substrate in the third embodiment.

FIG. 10 is a schematic front view showing how a material is deposited on a substrate in the third embodiment.

FIG. 11 is a schematic cutaway perspective view showing a state in which a material is deposited on a substrate in the third embodiment.

FIG. 12 is a schematic front view showing a state in which exposure is performed on a resist in a fourth embodiment.

FIG. 13 is a schematic cutaway perspective view showing a state in which the resist is developed in the fourth embodiment.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Coherent beam supply device 2 Gas supply device 3 Substrate exchange room 4 Reaction chamber 5 Synchrotron radiation source 6 Filter 7 Substrate 8 Gate valve 9, 10 Vacuum exhaust device 11 Substrate holder 12 Substrate heater 13 to 15 Half mirror 16 to 22 Mirror 23 Gas nozzle 24, 25, 26, 30 Material 28, 32 Hole 31 Resist 31a Exposure part

Claims (8)

[Claims] 1. A two-dimensional interference image is formed on a substrate surface by irradiating the substrate surface with coherent radiation light, laser light, or a coherent electron beam from a plurality of directions, and simultaneously irradiating source molecules or source atoms. Thereby selectively depositing the material obtained by the reaction of the source molecules or the source atoms only at the position where the two-dimensional interference image exists on the substrate. 2. A two-dimensional interference image is formed on the substrate surface by irradiating the substrate surface with a coherent radiation, a laser beam, or a coherent electron beam from a plurality of directions, and simultaneously irradiating the source molecules or the source atoms. Thereby selectively depositing the material obtained by the reaction of the source molecules or the source atoms only at positions where the two-dimensional interference image does not exist on the substrate. 3. A two-dimensional interference image is formed on the substrate surface by irradiating the substrate surface with a coherent radiation light, a laser beam or a coherent electron beam from a plurality of directions, and simultaneously irradiating the source molecules or the source atoms. By doing so, the source molecules or the source atoms react at the position where the two-dimensional interference image exists and the position where the two-dimensional interference image does not exist on the substrate, and different materials having different physical properties are deposited. A method for manufacturing an ultra-fine periodic structure, characterized in that: 4. A two-dimensional interference image is formed on a substrate surface by irradiating the substrate surface with any one of coherent radiation light, laser light, and coherent electron beam from a plurality of directions to form the two-dimensional interference image on the substrate surface. A method of manufacturing an ultrafine periodic structure, wherein a substrate material is selectively etched only at a position where an interference image exists, and holes are two-dimensionally periodically arranged on the substrate. 5. A substrate surface is irradiated with any one of coherent radiation, laser light, and coherent electron beam from a plurality of directions to form a two-dimensional interference image on the substrate surface and simultaneously irradiate a reactive gas. By doing
The reactive gas reacts with the substrate material only at the position where the two-dimensional interference image exists on the substrate to selectively etch the substrate material, and the holes are periodically arranged two-dimensionally on the substrate. A method for manufacturing an ultrafine periodic structure. 6. The method according to claim 4, wherein the holes are two-dimensionally arranged on the substrate, and the substrate is irradiated with the source molecules or the source atoms to thereby provide the source molecules or the source atoms. A method for producing an ultrafine periodic structure, characterized by selectively depositing a material obtained by reacting raw material atoms only at a position where the hole exists. 7. After forming a resist on a substrate or a thin film formed on the substrate, any one of coherent radiation light, laser light, or coherent electron beam is irradiated onto the resist from a plurality of directions. A method for manufacturing an ultrafine periodic structure, comprising: performing exposure while forming a two-dimensional interference image on a resist surface; and subsequently developing the resist to remove either an exposed portion or an unexposed portion. 8. After coating the surface of a substrate or a thin film formed on the substrate with a resist material which is easily evaporated such as arsenic, selenium, sulfur, etc., any one of coherent radiation light, laser light, and coherent electron beam is applied. By irradiating the resist material from a plurality of directions and performing exposure while forming a two-dimensional interference image on the surface of the resist material, it is possible to remove the resist material only at the position where the two-dimensional interference image exists. A method for manufacturing an ultrafine periodic structure.