JPH11176975A - Semiconductor device - Google Patents

Abstract

(57) Abstract: A power supply circuit or a ground circuit can be easily formed, a circuit can be formed from a plurality of locations, and the demand for miniaturization and thinning of a semiconductor device is satisfied. A plurality of conductor leads (13) directly connected to respective electrode pads (12a) of a semiconductor element (12) arranged at the center.
And a semiconductor device 10 having a conductor circuit pattern 14 having an outer frame 23 surrounding the plurality of conductor leads 13,
The outer frame 23 constitutes a power supply or ground circuit lead, and at least one of the conductor leads 13 arranged in the outer frame 23 is connected to the outer frame 23.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention provides a common circuit for a power supply circuit or a ground circuit, and furthermore, when connecting the inner end of a conductor lead to a semiconductor element, directly without using means such as wire bonding. The present invention relates to a configuration of a conductor circuit pattern of a so-called inner lead bonding type semiconductor device for connecting a conductor lead and an electrode pad of a semiconductor element.

[0002]

2. Description of the Related Art In recent years, there has been a strong demand for higher performance, smaller size, and thinner electronic devices. To meet this demand, semiconductor devices have been made smaller, thinner and have more terminals. (Ball Grid Array) type semiconductor devices in which are arranged in a fan-out type area array have been developed. As described above, with the miniaturization and the increase in the number of terminals of the semiconductor device, I / O simultaneous switching noise of the semiconductor element is generated, and the electric characteristics are degraded. In order to solve this problem, there has been proposed a semiconductor device having a multilayer structure in which power supply and ground conductor circuit layers are laminated on a conventional circuit pattern layer. In addition, in miniaturization, thinning, and multi-terminal of a semiconductor device, connection between an electrode pad arranged on a main surface of a semiconductor element and a plurality of conductor leads having inner ends is usually made of a gold wire or the like. Although connected by a wire bonding method using an aluminum wire, there is a disadvantage that the thickness of the manufactured semiconductor device is increased. Therefore, the semiconductor element
An inner lead bonding method and a flip chip bonding method in which an inner end of a conductor lead is directly connected to an electrode pad of a semiconductor element using a down method have been proposed.

[0003]

However, in the semiconductor device having the multi-layer structure, a conductor circuit board for common power supply and a conductor circuit board for common ground are formed separately from the circuit pattern layer. It has to be connected to a predetermined conductor lead and laminated, and the thickness of the manufactured semiconductor device is increased, and the manufacturing process is complicated and the manufacturing cost is increased. Furthermore, in the inner lead bonding method and the flirer chip bonding method, since the connection between the electrode pad of the semiconductor element and the inner end of the conductor lead is a flat and direct connection, the semiconductor There is a problem that the degree of freedom in designing the arrangement of the electrode pads of the device is lower than that of the wire bonding method. That is, in the wire bonding method, when each electrode pad and the inner end of the conductor lead are bonded via a bonding wire, the bonding wire can be three-dimensionally connected. Although it is relatively easy to cope with the arrangement of the electrode pads of the element, in the inner lead bonding method or the flip chip bonding method, the connection between each electrode pad and the inner end of the conductor lead is flat. Therefore, there is a problem that the degree of freedom in the layout design of the electrode pads of the semiconductor device is extremely low. In particular, in the case of an external wiring board on which a semiconductor element or a semiconductor device is mounted, the position of the preferable power supply or ground electrode pad may be required,
In this case, if this is attempted in the conductor circuit pattern of the semiconductor device, there is a problem that the positions of the power supply and the ground electrode pad of the semiconductor element and the external wiring board are restricted. The present invention has been made in view of such circumstances, has a function equivalent to that of the semiconductor device having the stacked structure, facilitates formation of a power supply circuit or a ground circuit, and can form the circuit from a plurality of locations. It is an object to provide a semiconductor device. Still another object of the present invention is to meet demands for miniaturization and thinning of a semiconductor device.

[0004]

According to the present invention, there is provided a semiconductor device comprising:
The semiconductor device according to the present invention is a semiconductor device having a conductor circuit pattern including a plurality of conductor leads directly connected to each electrode pad of a semiconductor element arranged in the center, and an outer frame surrounding the plurality of conductor leads. The outer frame constitutes a lead for a power supply or a ground circuit, and at least one of the conductor leads arranged in the outer frame is connected to the outer frame. According to a second aspect of the present invention, in the semiconductor device according to the first aspect, the back surface side of the conductive circuit pattern is joined to a stiffener via a first insulating material layer, and a center of the stiffener is provided. The semiconductor element is mounted on an element mounting portion formed by a depression, and the surface side of the conductor circuit pattern has a second insulating material layer except for a connection terminal land provided on each of the conductor leads and a central element connection portion. Further, external connection terminals formed of terminal balls or bumps are provided on the respective connection terminal lands, and the exposed portions of the semiconductor element and the conductor leads on the center side are resin-sealed.

[0005]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the accompanying drawings to provide an understanding of the present invention. FIG. 1 is a partially omitted plan view of a semiconductor device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of the semiconductor device, and FIGS. 3 and 4 are portions of a conductor circuit pattern of the semiconductor device, respectively. FIG. 5 is an enlarged view and FIG. 5 is a plan view showing a state where a plurality of the semiconductor devices communicate with each other.

As shown in FIGS. 1 to 5, a semiconductor device 10 according to an embodiment of the present invention includes a stiffener 11 made of a good conductor, a semiconductor element 12 provided in a central recess of the stiffener 11, Conductive circuit pattern 1 having conductive leads 13 radially with semiconductor element 12 at the center
4, terminal balls 16 serving as external connection terminals provided on connection terminal lands 15 of each conductor lead 13, sealing resin 17 covering semiconductor element 12 and its connection part, and cover resist 18 of conductor circuit pattern 14. have. Hereinafter, these will be described in detail.

The stiffener 11 is made of a copper plate whose surface is plated with nickel, and is provided with an element mounting portion 19 which is depressed at the center. The semiconductor element 12 is joined to the element mounting portion 19 via an adhesive 20. The conductor circuit pattern 14 is a polyimide tape 2 which is an example of a first insulating material layer having an opening 21 formed inside.
2, a main part is formed, an outer frame 23 is provided around the main part, and a plurality of conductor leads 13 are provided inside the outer frame 23. A connection terminal land 15 is provided on the plurality of conductor leads 13. The opening 21 is sufficiently larger than the size of the semiconductor element 12, and the inside tip of each conductor lead 13 protrudes inward from the opening 21, and extends to each electrode pad 12 a of the semiconductor element 12 mounted at the center. ing. The depth of the element mounting portion 19 on which the semiconductor element 12 is mounted is determined so that each of the conductor leads 13 just comes into contact with each of the electrode pads 12a of the semiconductor element 12.

When the conductor circuit pattern 14 is first formed by etching or pressing, the outer frame 23 and the outer portion of each conductor lead 13 are all connected to each other via the outer frame 23. Power to the conductor leads 13,
A noble metal plating process is performed on the surface side of the connection terminal land 15 and the like and on the back side of the tip of the conductor lead 13. After performing the plating process described above, the outer frame 23 and the main conductor leads 13
Is separated from the outer end of the conductor lead 13 to ensure the insulating state of each conductor lead 13.

FIG. 3 shows a first method of separating the conductor lead 13 from the outer frame 23. In the example of FIG. 3, the connecting portion 24 with the outer frame 23 is separated by etching. In some of the conductor leads 13 (as viewed from the arrow a in FIG. 3), the outer frame 23 and the conductor leads 13 are connected. A connection terminal land 25 is provided at a corner of the outer frame 23, and a terminal ball 16 is arranged at this portion. Accordingly, when the outer frame 23 is used for a power supply circuit or a grounding circuit, the terminal balls provided on the connection terminal lands 25 are connected to the internal semiconductor element 12 by the connected conductor leads 13 and provided on the external circuit board or the like. 16 are connected.

FIG. 4 shows that the outer frame 23 is formed by pressing.
A second method of separating the conductor lead 13 from the conductor lead 13 is shown. As shown in the figure, a long hole 26 is formed through the lower polyimide tape 22, and the outer frame 23 and the conductor lead 13 are formed by the long hole 26. Are separated. In this way,
When the long hole 26 is formed by pressing, when the conductive circuit sheet including the conductive circuit pattern 14 bonded to the polyimide tape 22 is bonded to the stiffener 11, the adhesive of the cover resist 18 on the surface passes through the long hole 26. As a result, the semiconductor device 10 is joined to the stiffener 11 to serve as an anchor, and the overall strength of the semiconductor device 10 as a product is improved.

As shown in FIG. 2, the connection terminal lands 1 formed on the conductor leads 13 of the conductor circuit pattern 14 are formed.
A cover resist 18, which is an example of a second insulating material layer, is provided on portions other than 5, 25 and the central element connection portion.
While protecting the insulation of the conductor circuit pattern 14,
Terminal balls 16 are joined to the connection terminal lands 15 and 25 via a conductive adhesive 27. Terminal ball 16
Is made of beads of plastic, glass, or the like, and a conductive film (metal plating) is formed on the surface thereof, thereby constituting an external connection terminal of the semiconductor device 10. Here, it is also possible to use solder balls or metal balls for the terminal balls 16. In the semiconductor device 10 according to this embodiment,
The polyimide tape 22 is narrower than the stiffener 11, and the cover resist 1 extends to the periphery of the stiffener 11.
8 protects the peripheral end portions of the conductor circuit pattern 14 and the polyimide tape 22.

With the inner end of the conductor lead 13 joined to each electrode pad 12a of the semiconductor element 12, the inside of the semiconductor element 12, the exposed conductor lead 13 and the cover resist 18 is sealed by a sealing resin 17. Completely resin-sealed. An elastomer or the like is used for the sealing resin 17, but the bottom surface is located at a position higher than the lower end of the terminal ball 16, and the semiconductor device 10 is mounted on a substrate to easily join the terminal ball 16. It has become. As shown in FIG. 5, a plurality of semiconductor devices 10 (four in this embodiment) are provided on the same stiffener member 28, and are separated by a pressing process in a final step. It is formed. In FIG. 5, reference numeral 29 denotes a pilot hole, and reference numeral 30 denotes a dropout portion (connection tab).

Since the semiconductor device 10 is configured as described above, the inner terminal of the conductor lead 13 connected to the outer frame 23 is connected to the ground terminal of the semiconductor element 12 or the electrode pad 12a for the power terminal. The outer frame 23
Are the leads for the ground or the power supply circuit. The outer frame 23 can be connected to the outside using terminal balls 16 provided on connection terminal lands 25 provided at the four corners of the conductor circuit pattern 14. The connection terminal land 1 is provided at an intermediate portion of the conductor lead 13.
The provision of 5 enables connection to the outside via the terminal ball 16 provided at that portion, so that the degree of freedom in designing a power supply circuit or a ground circuit is increased.

In the above embodiment, a quad-type semiconductor device in which conductor leads are arranged from four sides around a semiconductor element has been described. The present invention is also applied to a dual type semiconductor device in which is disposed. Further, a conductor plate may be disposed below or above the conductor circuit pattern via another insulating layer, and may be a ground circuit or a power supply circuit having a polarity different from that of the outer frame. Further, in the above embodiment, the terminal ball is used as the external connection terminal, but the present invention is applicable to a bump.

[0015]

In the semiconductor device according to the first and second aspects, the outer frame is formed on the same plane as the conductor lead, constitutes a lead for a power supply or a ground circuit, and is arranged in the outer frame. Is integrally connected to the outer frame, so that a power supply circuit or a ground circuit according to the layout specifications of the electrode pads of the semiconductor element can be easily formed similarly to the conventional semiconductor device having a multilayer structure. . Further, a direct connection method such as an inner lead bonding method or a flip chip bonding method can be used for connecting the semiconductor element and the conductor lead, and the semiconductor element can be connected by a face-down method. Can meet the demand for thinning. In particular, in the semiconductor device according to the second aspect, the whole is reinforced and supported by the stiffener,
On the lower surface side, there are provided external connection terminals such as terminal balls and bumps which can be easily joined to the external wiring circuit board, so that a semiconductor device which is thin and has sufficient strength can be provided. The degree of freedom of the arrangement of the electrode pads of the power supply or the ground circuit is improved.

[Brief description of the drawings]

FIG. 1 is a partially omitted plan view of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a sectional view of the semiconductor device.

FIG. 3 is a partially enlarged view of a conductor circuit pattern of the semiconductor device.

FIG. 4 is a partially enlarged view of a conductor circuit pattern of the semiconductor device.

FIG. 5 is a plan view showing a state where a plurality of the semiconductor devices communicate with each other.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 Semiconductor device 11 Stiffener 12 Semiconductor element 12a Electrode pad 13 Conductor lead 14 Conductor circuit pattern 15 Connection terminal land 16 Terminal ball 17 Sealing resin 18 Cover resist (2nd insulating material layer) 19 Element mounting part 20 Adhesive 21 Opening Reference Signs List 22 polyimide tape (first insulating material layer) 23 outer frame 24 connecting portion 25 connecting terminal land 26 long hole 27 conductive adhesive 28 stiffener material 29 pilot hole 30 drop-out portion

Claims (2)

[Claims] 1. A semiconductor device having a conductor circuit pattern comprising: a plurality of conductor leads directly connected to respective electrode pads of a semiconductor element disposed at a center; and an outer frame surrounding the plurality of conductor leads. A semiconductor device, wherein an outer frame constitutes a lead for a power supply or a grounding circuit, and at least one of the conductor leads arranged in the outer frame is connected to the outer frame. 2. The back side of the conductor circuit pattern is formed by a first
The semiconductor element is mounted on an element mounting portion formed of a central depression of the stiffener while being bonded to the stiffener via an insulating material layer of the stiffener. Except for the connection terminal land and the central element connection part, the connection terminal land is covered with a second insulating material layer. Further, each of the connection terminal lands is provided with an external connection terminal composed of a terminal ball or a bump. 2. The semiconductor device according to claim 1, wherein an exposed portion on the center side of the conductor lead is sealed with a resin.