JPH11176895A - Temperature regulating plate for semiconductor wafer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wafer-temperature regulating plate, which is capable of performing highly accurate screening test without trouble of leaking liquid. SOLUTION: In a disk 2 with good thermal conductivity, a flat heat pipe 20 constituted by sealing heat-pipe liquid 25 in a flat hollow body, is buried. A heater 6 is provided at the lower part of the disk 2. A testing chamber 10 is formed so as to contain a body under test 50 at burn-in test. In the testing chamber 10, the current of the heater 6 is increased and decreased with temperature sensors 5a and 5b, and the chamber is constituted so as to have the temperature of the disk 2 regulated in this constitution.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a screening test apparatus for detecting potential defects by applying a high temperature to an integrated circuit formed on a semiconductor wafer, and more particularly to a screening test apparatus for maintaining the semiconductor wafer at a predetermined temperature. And a temperature control plate for performing the temperature control.

[0002]

2. Description of the Related Art The above-described screening test apparatus, which is generally called a burn-in apparatus, packages an IC chip obtained by dividing a semiconductor wafer, and then conducts a conduction test in a hot atmosphere at a predetermined temperature to obtain a latent test. Defectives are revealed and defective products are screened.

[0003] Such a conventional apparatus requires a large-capacity constant temperature test chamber and generates a large amount of heat. Therefore, it needs to be performed separately from other manufacturing lines and in a separate room. It is necessary to perform the burn-in test at the stage of the wafer before it is chipped because it requires time and effort such as mounting and demounting, and because a defective product is found after packaging, waste is generated. It is rare.

[0004] A burn-in apparatus for meeting such a demand needs to maintain a uniform temperature of the semiconductor wafer when applying a thermal load to the semiconductor wafer. As a temperature control plate for a wafer used for this purpose, a plate-like body made of a heat conductive material such as copper, aluminum, or an alloy thereof is provided with a series of refrigerant channels and heaters, and the refrigerant channels are formed. In addition to flowing a coolant for cooling the wafer to a temperature lower than the target temperature, the heater is heated to adjust the temperature of the plate, and the semiconductor wafer contacted with the plate is brought to a predetermined target temperature. Temperature regulating plates adapted to be maintained have been proposed. (Japanese Unexamined Patent Publication No. 8-34003
0 publication).

Most of the heat generated by energizing the semiconductor wafer during the test is removed by contact with the temperature control plate, but part of the heat is released as radiant heat, or the ambient atmosphere and electrical contacts It is released through such as. Therefore, there is a difference in the amount of heat dissipation between the peripheral portion of the wafer having a low ambient temperature and the central portion of the wafer surrounded by the heat generating portion. For example, if the diameter is about 20
When the calorific value of the entire wafer in cm is 1.2 kw, a temperature difference of about 10 ° C. occurs between the central part and the peripheral part. Therefore, when the wafer is heated and cooled while maintaining the temperature control plate at a uniform temperature. In this case, the accuracy of the burn-in test may be significantly reduced.

As means for eliminating such non-uniformity of the temperature distribution of the wafer, a temperature distribution symmetrical to the temperature distribution of the wafer such that the temperature at the center of the temperature control plate is low and the temperature at the periphery is high. A method of controlling the temperature of the wafer by making it appear on the temperature control plate is conceivable.However, a method of forming a coolant flow path in the temperature control plate and allowing the coolant to flow through it is necessary to control the temperature of the coolant. Leakage of liquid from a plate or piping to peripheral equipment may cause serious damage. Furthermore, in order to increase the test efficiency, it is necessary to operate a large number of temperature control plates at the same time, but these many temperature control plates satisfy various conditions such as specific heat, viscosity, boiling point, electrical insulation, and corrosiveness. To supply an expensive coolant at a predetermined temperature, there are disadvantages in that the supply equipment becomes complicated and large, and the position of the temperature control plate is fixed by piping. Furthermore, once the temperature control plate is cooled down to a certain temperature level or lower, including the central portion of the temperature control plate, and a temperature difference is created by the electric heater, the loss is large in terms of heat balance and the running cost is large. There are disadvantages.

[0007]

SUMMARY OF THE INVENTION It is a first object of the present invention to disclose a wafer temperature control plate capable of performing a high-precision screening test by maintaining a semiconductor wafer uniformly at a target temperature. A second object of the present invention is to disclose a wafer temperature control plate in which there is no possibility of occurrence of an accident due to coolant leakage during a burn-in test. A third object of the present invention is to disclose a wafer temperature control apparatus which has a simple configuration, is easy to maintain, and requires low running cost.

[0008]

A first gist of the present invention is a wafer temperature adjusting plate in a semiconductor wafer burn-in apparatus, wherein the plate has a smooth surface on an upper surface of a thermally conductive plate, and has a flat surface. A plate-type heat pipe in which a heat pipe working liquid is sealed in a hollow disk, and a heater is provided below the heat conductive plate. In the temperature control plate of the semiconductor wafer in the apparatus.

[0009] In the above, aluminum, copper, alloys thereof, and the like are typical examples of the thermally conductive plate-like body constituting the temperature control plate. The hollow disk integrally embedded in the plate is the dish-shaped body that is configured so that the portion in the central region of the thermally conductive plate is the lowest, and the center is the lowest. By having a portion, a dish-shaped body having a hollow portion sandwiched between a pair of upper and lower flat inverted conical surfaces, even if a wick is not provided in the plate-type heat pipe, the heat pipe peripheral portion Since the liquefied working fluid can quickly return to the center of the heat pipe by gravity, the speed of heat transfer is high, and the accuracy of temperature control is significantly improved. Of course, the hollow disk may be a flat-type hollow disk with no drop between the center and the periphery, but in that case, the working fluid returns to the high-temperature portion through the wick, so that the responsiveness of temperature control is better. The wickless hollow dish-like body having a shape that is inclined upward toward the periphery is more preferable.

As the working fluid, a fluid that changes its phase within a temperature range of a temperature distribution required for the temperature control plate and has a large latent heat is appropriately selected. In addition, the plate-type heat pipe has no wig in the hollow disk,
It is clear from the above description that a so-called thermosiphon type is also included. The heater may be one that passes an air flow heated to a predetermined temperature through a ventilation passage provided in a meandering or spiral shape in the plate-like body, but it is possible to embed an electric heater directly in the thermally conductive plate-like body. Alternatively, a plate heater in which an electric heating wire is buried in a flat plate having excellent heat conductivity, such as aluminum, may be closely fixed to the lower surface of the plate-like body.

[0011] The temperature control plate according to the first aspect includes:
During the burn-in test, the central part of the wafer dissipates heat more slowly than the peripheral part due to the current-carrying resistance. Therefore, the central part has a higher temperature than the peripheral part. At this time, the temperature adjustment plate that is in close contact with the wafer directly or via a heat transfer plate, etc., embeds the temperature difference generated in the thermally conductive plate by heat conduction from the wafer into the plate. Plate-type heat pipes are quickly eliminated. That is,
In the vicinity of the center of the plate-like body where the temperature becomes highest, the heat pipe working liquid evaporates most intensely, and by depriving latent heat, the center and the area surrounding it are cooled according to the temperature gradient. The vaporized hydraulic fluid quickly moves to the lower peripheral area, and the amount of the hydraulic fluid vapor corresponding to the temperature gradient at each location is condensed to release latent heat. In this way, the plate type heat pipe instantaneously moves a large amount of heat, which is orders of magnitude different from that due to heat conduction,
In addition, by distributing the amount of heat in accordance with the degree of non-uniformity of the temperature distribution, the non-uniformity of the temperature distribution of the plate having good thermal conductivity is eliminated. As a result, the temperature of the wafer directly or indirectly contacting the wafer can be quickly made uniform. Also, unlike the method of adjusting the temperature with a circulating refrigerant,
Excellent heat balance due to extremely low heat flow to the outside.

The heater is heating means for adjusting and maintaining the temperature of the wafer at a target temperature. Therefore, it is only necessary to provide the wiring of the heating wire, the flow path of the hot air flow, and the like so that the heat conductive plate can be heated to a uniform temperature. The heater is on the opposite side of the plate-type heat pipe from the wafer. Therefore, the heat applied to the plate-like body is transmitted to the wafer via the heat pipe,
Some uneven heating due to the arrangement of heater heating wires
Needless to say, the heat pipe eliminates the problem.
Examples of the plate-shaped electric heater include those in which an electric heating wire insulated in a copper or aluminum flat plate is spirally enclosed, a flexible sheet heating element using carbon fiber or the like as a conductor, and the like. . The external electric heater is inexpensive and easy to install, and can easily cope with disconnection.

A second gist of the present invention is a wafer temperature adjusting plate in a semiconductor wafer burn-in apparatus, which has a smooth surface on an upper surface of a thermally conductive plate-like body. A cage-type heat pipe in which a heat pipe working fluid is sealed in a cage-shaped hollow pipe formed by arranging a plurality of different-diameter hollow rings concentrically around the same center line in series with a connecting pipe. Are embedded, and a heater is provided below the thermally conductive plate-shaped body.

A temperature control plate according to the second aspect,
When compared with the temperature control plate according to the first aspect, in which the plate-type heat pipe is integrally held in the thermally conductive plate-like body, the heat pipe is substantially dish-shaped by a hollow pipe communicating with each other via a connection pipe. The feature of the temperature control plate according to the second aspect is that a cage type heat pipe formed so as to form the following is used, and the other points are exactly the same. In the above, there is a case where a wig is provided in a hollow pipe and a case where it is not provided. Further, the arrangement of the hollow rings of different diameters may be arranged around the same center line so as to have a vertical drop, or all the hollow rings of different diameters may be arranged on the same plane. Is also good. The other components are the same as those of the heat pipe of the first aspect, and the action of making the temperature of the thermally conductive plate-like body uniform is basically the same.

According to a third aspect of the present invention, there is provided a test apparatus comprising at least a temperature adjusting plate, a wafer, and a wafer energizing means at the time of a wafer burn-in test. The temperature control plate is characterized in that a test chamber is formed outside the temperature control plate so as to include the temperature control plate.

Since a test chamber is required for each wafer to be tested, in order to reduce the size of the entire apparatus,
It is desirable to be as flat and small as possible. Since the test chamber needs to be opened and closed at the time of loading and unloading the wafer, it is necessary to have an opening and closing structure that does not hinder the operation. For example, after the wafer, the probe means and the electrode plate positioned on the wafer are moved above the smooth surface of the temperature control plate, the wafer is lowered and mounted toward the smooth surface of the temperature control plate, and the probe means is moved from above to the probe means. If the energizing means is lowered to perform the connection operation with the power supply, the test chamber is located below the temperature adjusting plate, the lower half forming member surrounding the temperature adjusting plate and the wafer, etc., and the test chamber is moved up and down together with the energizing means. The upper half-forming member and the lower half-forming member may be in contact with each other to form a test chamber. . When a wafer or the like is mounted from above the temperature control plate, a test chamber that moves in the left-right direction and opens and closes may be configured.

With this configuration, the amount of heat radiation to the surrounding atmosphere surrounding the temperature control plate is significantly reduced, which has an energy-saving effect and the temperature distribution of the wafer based on the heat radiation from the wafer to the surrounding environment. Is reduced, and a more accurate burn-in test can be performed. Furthermore, if a ventilation fan is provided in the test chamber and a circulation ventilation path is formed in the test chamber, a circulation path of air is formed around the temperature control plate, the wafer, and the power supply device therefor. The atmosphere temperature surrounding the device can be made more uniform, and the amount of heat generated by the heater can be used effectively.
Promote improvement of test accuracy and energy saving effect.

According to a fourth aspect of the present invention, there is provided a temperature control plate defined by any one of the first to third aspects, wherein the temperature detecting plate detects a temperature of a peripheral portion of the wafer or a region near the peripheral portion of the wafer during a test. The operation of the heater is controlled by a heater and a temperature detector for detecting a temperature in the central portion of the wafer or in the vicinity of the central portion of the wafer.

When the wafer is placed on the temperature control plate, the wafer is directly placed on the temperature control plate and the probe means is positioned and brought into contact with the wafer, and when the wafer and the probe means are accurately positioned and connected. Is placed on the temperature control plate. As an example of the latter, first, there is a method in which a wafer placed at a fixed position on a heat transfer plate is accurately positioned and brought into contact with a probe means, and is placed on a temperature control plate. Therefore, the wafer proximity region includes not only the temperature control plate but also a member that directly contacts the wafer and transfers heat, such as the above-described heat transfer plate. It also includes the case where the temperature detector directly contacts the wafer.

To adjust the temperature of the heater provided on the temperature adjusting plate, the temperature detector is installed as described above, and the operation of the heater is determined by detecting the difference between the wafer peripheral temperature and the central temperature and setting the target temperature. With such a configuration, accurate control of the temperature of the temperature control plate can be easily realized.

According to a fifth aspect of the present invention, there is provided a temperature control plate defined by any one of the first to fourth aspects, wherein a ring-shaped rising wall is formed at a peripheral edge of the surface of the thermally conductive plate. In the temperature control plate, the rising wall surrounds the side of the wafer during a wafer burn-in test.

In the burn-in test of a wafer, a large temperature difference occurs between the central portion and the peripheral portion of the wafer because the heat generated by the electric resistance of each integrated circuit on the wafer is generated at the peripheral portion of the wafer. Is easy to dissipate, and conversely, heat is more likely to accumulate toward the center. Therefore, as the ambient temperature surrounding the periphery of the wafer is lower, the temperature difference between the center and the periphery of the wafer is larger, and the temperature control ability required for the temperature control plate is also larger. The rising wall is provided in order to eliminate the above-mentioned temperature difference by surrounding the side of the wafer with a wall surface having substantially the same temperature as the temperature adjusting plate. This is at the edge of the rising wall, during the burn-in test,
The peripheral parts of the above-mentioned conducting means and its holding means come into contact,
The most effect is exhibited by surrounding the wafer side in a sealed state.

The wafer generates heat due to its electric resistance during the wafer conduction test, and a temperature difference is generated from the central portion to the peripheral portion. At this time, the temperature control plate of the present invention, which is capable of exchanging heat with the wafer, is a plate that is integrally housed in the plate over the entire area of the thermally conductive plate that faces the wafer. Type heat pipe or basket type heat pipe, the high-speed movement of the hydraulic fluid, large heat transfer capacity which is orders of magnitude different from the conventional heat transfer method, and the evaporation of hydraulic fluid according to the temperature difference due to the location of the temperature control plate With the nature that the amount or the amount of condensation of the working fluid vapor is automatically and optimally distributed, heat is taken from the high temperature region in the center of the wafer and given to the low temperature region, as if the temperature distribution of the semiconductor wafer is opposite to that of the semiconductor wafer. Acting to cause a temperature distribution to appear on the plate,
The non-uniformity of the temperature distribution of the wafer is eliminated by offsetting the temperature distribution of the semiconductor wafer. The heater serves to raise the wafer temperature to a predetermined target test temperature. Thus, the wafer is adjusted to a uniform temperature within ± 1 ° C.

The function of the working fluid of the heat pipe substantially serves also to transfer the heat of the central portion of the plate to the peripheral portion. Therefore, the temperature adjustment speed (or the responsiveness of the adjustment function to a temperature change) is extremely fast as compared with the temperature adjustment mechanism of the conventional method of adjusting the temperature. Further, the temperature control plate of the present invention can directly and indirectly contact the wafer at the time of the burn-in test so that most of the members that influence the wafer temperature can be enclosed in the test chamber. The temperature difference between the temperature control plate and the peripheral portion can be kept small, the load on the temperature control plate is small, and accurate temperature control is possible accordingly. Also,
The equipment is compact and energy consumption is low.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a plan view of a main part of an embodiment of a temperature control plate of the present invention, as viewed from a plane direction. The temperature control plate 1 has an aluminum disk 2 as a thermally conductive plate-like body, and is formed at a peripheral edge of the disk 2 by rising upward from the peripheral edge toward the center by a predetermined width. The provided rising wall 2c is formed. The disk surface 2a surrounded by the rising wall 2c is a mirror-like smooth surface and surrounds the center of the disk, and has a concentric ring-shaped vacuum suction groove 3a.
a to d are formed at substantially equal intervals. Reference numeral 3f denotes a vacuum supply groove interconnecting the vacuum suction grooves 3a to 3d. One end of a vacuum supply path 3 penetrating the disk 2 in the axial direction is opened in the groove 3f. As shown in FIG. 2, the other end of the vacuum supply path 3 is connected to a vacuum supply tube 3g.

Near the center and the periphery of the disk 2, respectively,
The back surface 2 of the disk 2 is parallel to the axial
b through the surface 2a, the temperature sensor storage holes 4a,
4b is drilled. A central temperature sensor 5a and a peripheral temperature sensor 5b are housed therein so as to be vertically movable. The temperature sensors 5a, 5b are provided with the storage holes 4a,
b, lightly urged upward by the coil springs 5s and 5s, and a temperature measuring unit 5h provided at the upper end thereof.
5h projects upward from the surface 2a by spring pressure. Reference numerals 8 and 8 denote O-rings mounted at the upper end openings of the storage holes 4a and 4b, which prevent vacuum leakage between the front surface 2a and the heat transfer plate 60 which is in close contact with the front surface 2a.

Inside the disk 2, a plate type heat pipe 20 is embedded integrally. Heat pipe 20
Is a hollow dish-shaped body 21 having a diameter substantially equal to or larger than the semiconductor wafer 50 and having a circular shape in plan view.
It contains a heat pipe working liquid 25 sealed therein. The hollow dish-shaped body 21 includes a pair of upper and lower flat inverted conical plates 21a and 21b that are inclined at an equal inclination angle toward the center.
Are stacked at equal intervals and have a shape as if the periphery is closed, and this is filled with a hydraulic fluid using stainless steel or the like as a material, and then integrally buried as a core during aluminum casting of the disc 2 It can be easily manufactured. Of course, the disk 2 may be prepared by vertically dividing the disk 2 into two parts, and sandwiching the dish-shaped body 21. Hollow dish 2
1 is formed with through holes through which the temperature sensors 5a and 5b and the vacuum supply path respectively penetrate, which are isolated from the inside of the dish-shaped body.

Reference numeral 6 denotes a plate heater, which is made of a flat plate made of aluminum and in which an electric heating wire such as a nichrome wire is evenly buried, and which has a heat transfer surface on one side attached to and detached from the back surface 2b of the disk 2. The sensor 5
The outputs from a and b are input to a temperature controller C, and the current supplied to the plate heater 6 is adjusted according to the temperature difference between the two sensors. Except for the upper surface of the temperature control plate 1, the lower half 10a of a flat box-shaped test chamber whose upper surface is open is provided so as to surround the side surface and the lower surface. A fan 9 is provided on the inner surface of the side wall of the lower half 10a of the test chamber. On the other hand, above the disk 2, the disk 2, the heat transfer plate 60 which is in contact with the upper surface of the disk 2, descends toward the test chamber lower half 10 a, and the semiconductor as a device under test. Wafer 50,
A box-shaped test chamber upper half 10b lacking a bottom surface for forming the test chamber 10 is provided so as to surround the electrode plate 70 and the like together with the test chamber lower half 10a.

Although the fan 9 is not always essential, by providing the fan 9, when the test chamber is closed, the ambient temperature in the test chamber is quickly and uniformly made uniform, and the wafer temperature is reduced from the time of startup. The time required to reach the steady state can be shortened, and the influence of disturbance is prevented. Furthermore, if a heater for air heating is installed in the fan blowing area, it can be used instead of the plate heater 6.

[0030]

A method of performing a high-temperature screening test using the above apparatus will be described. As an example of mounting the wafer 50 on the temperature control plate, as shown in FIG.
A heat transfer plate 60 made of an aluminum plate, a wafer 50 mounted thereon, a current-carrying contact (probe means) for energizing each of a large number of integrated circuits on the wafer, and an electrode plate connected thereto After positioning and connection with 70, this is positioned and placed on the temperature control plate. Then, the current-carrying substrate 80 provided with the power supply contact to the electrode plate is lowered and connected to the electrode plate 70, and the current is started to the wafer. At the same time, as described later, the test chamber 10 is closed and the fan 9 is turned on. Start blowing.

A ring member 71 provided downward around the electrode plate 70 is provided on the upper surface of the rising wall 2c provided on the peripheral portion of the disk 2 via a heat conductive sealing material 15 made of a heat conductive rubber sheet. In contact. Accordingly, the heat of the temperature control plate is transmitted to the ring member 71 via the sealing member 15, so that the release of heat from the side of the wafer 50 is remarkably reduced. Further, since the heat from the rising wall 2c and the heat-conductive sealing material 15 reaches the electrode plate 70, it also contributes to a rise in the temperature around the electrode plate, and the current contact due to the bias of the heat distribution of the electrode plate 70. Can be expected to prevent the displacement of The heat transfer rubber sheet is, for example, formed of a thin sheet in which powder of a metal oxide or nitride having excellent thermal conductivity such as alumina or boron nitride is dispersed in silicon rubber. Examples include a heat transfer rubber sheet manufactured by Shin-Etsu Chemical Co., Ltd., TC-20BG, and a thickness of 0.2 mm.

When the heat transfer plate 60 is mounted on the temperature control plate, the temperature control plate and the heat transfer plate 60 come into close contact with each other due to the vacuum from the vacuum supply path 3, and at the same time, the temperature sensors 5a and 5b It enters a temperature sensor entry hole 61 provided at a corresponding position in the heat transfer plate 60,
h is lightly pressed by a spring pressure to a position slightly inside the upper surface of the heat transfer plate. This may improve the detection accuracy by using the entrance hole 61 as a through hole so that the temperature measuring unit 5h directly contacts the wafer. On the other hand, above the electrode plate 70 and the current-carrying substrate 80, the upper half 10b of the test chamber capable of forming the test chamber 10 by contacting the upper edge of the lower half 10a of the test chamber.
Are provided so as to move up and down together with the energizing board 80. Therefore, at the time when the power supply to the wafer is started, the test chamber is simultaneously closed. 11a and 11b are guide members of the test room. Thus, the air sent from the blower fan 9 rises from the lower surface of the plate heater to the side surface of the test chamber, passes through the upper surface of the current-carrying substrate 80, and returns to the fan 9 to form an air circulation channel. Has become.

At the initial temperature rise when the burn-in test is started, the heat applied to the disk 2 by the plate heater 6 is transferred to the wafer temperature distribution through the plate type heat pipe 20 until the wafer reaches the steady state. Accordingly, more heat is transferred to the heat transfer plate in the low temperature part, and less heat is transferred to the heat transfer plate in the high temperature part, and the wafers in close contact with the heat transfer plate maintain the temperature while maintaining substantially equal temperatures. The temperature rises to reach the target set test temperature. When the temperature sensors 5a and 5b detect the state, the plate heater 6 greatly reduces the amount of heat generated so as to maintain the state. Since the amount of heat radiation of the wafer that generates heat by energization varies depending on the location, for example, a high-temperature portion of 10 ° C. or more appears at or around the center of the wafer as compared with the peripheral portion of the wafer.
However, the plate-type heat pipe 20 buried almost entirely in the disk 2 has the hydraulic fluid 25 stored in the center portion, which instantaneously absorbs a large amount of heat as evaporation heat, and The hydraulic fluid vapor generated by the heat transfer moves to the surrounding low-temperature portion and condenses at a speed similar to the speed of sound, and releases heat of condensation to equalize the temperature of the disk 2, and therefore passes through the heat transfer plate 60. The temperature of the wafer 50 to which heat is transferred in close contact is quickly made uniform.

In the above embodiment, the thermally conductive plate-like member has:
Although a temperature control plate having a configuration in which a plate-type heat pipe is embedded is illustrated, as a heat pipe usable for the temperature control plate of the present application, as shown in FIGS. 3 and 4, a plurality of hollow rings 31 a and 31 b having different diameters are used. , ..., 31f group around the imaginary center line 2d of the disc 2 such that the larger diameter hollow ring (e.g. 31b) is located above the smaller diameter hollow ring (e.g. 31c). Concentrically arranged in the vertical direction, adjacent hollow rings 31a to 31f of different diameters are connected to connecting pipes 32, 32,
.. May be a cage-type heat pipe formed by enclosing a heat pipe working liquid 35 in a cage-like hollow pipe 30 formed by communicating with each other. This cage type heat pipe may be provided such that the hollow rings of different diameters are arranged on the same plane. In that case, it is desirable to provide a wick in the pipe. In FIGS. 3 and 4, members having the same functions as those in FIGS. 1 and 2 are denoted by the same reference numerals.

As another heat pipe that can be used by being buried in the thermally conductive plate-shaped body of the temperature control plate of the present invention, as shown in FIG. For example, a plate-type heat pipe 40 in which a disk has a flat plate shape instead of a dish shape can be exemplified. This is because, for example, a vertical wick 42 made of a porous metal, such as sintered metal, and a net-like wick 43 provided on the upper and lower surfaces of the inside of the hollow disk 41 are provided in the hollow disk 41.
And a working fluid having an appropriate boiling point is sealed therein. The effects of the cage heat pipe and the flat plate heat pipe are the same as those of the plate heat pipe. Even if the effects are different, there is no essential difference, and the description is omitted.

[0036] The temperature control plate of the present invention is designed so that the working fluid and its vapor in the heat pipe are changed according to the temperature distribution in the heat exchange section.
It automatically concentrates or separates, absorbs or releases a large amount of latent heat, and acts to keep the temperature of the thermally conductive plate-like body uniform. Thus, the structure is simple and can be manufactured at low cost, there is no danger of liquid leakage, etc., and at a remarkable speed, the temperature of the temperature control plate is changed so as to cover the entire surface of the wafer with respect to a predetermined target temperature. A high-precision and high-accuracy test can be performed while maintaining a uniform temperature.

[Brief description of the drawings]

FIG. 1 is an explanatory view of one embodiment of a temperature control plate according to the present invention as viewed from a plane direction.

FIG. 2 is a cross-sectional view of the temperature control plate of FIG.
FIG. 4 is an explanatory diagram showing a use state in a wafer burn-in test.

FIG. 3 is an explanatory sectional view showing a main part of another embodiment of the temperature control plate according to the present invention.

FIG. 4 is an explanatory view of a cage heat pipe incorporated in the temperature control plate shown in FIG. 3 as viewed from a plane direction.

FIG. 5 is a partial cross-sectional explanatory view showing an example of a flat plate heat pipe that can be used by being embedded in a temperature control plate of the present application.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Temperature control plate 2 Disk 3 Vacuum supply path 3a-d Vacuum suction groove 4a, b Temperature sensor storage hole 5a, b Temperature sensor 5h Temperature measuring unit 6 Plate heater 8 O-ring 9 Fan 10 Test room 10a Test room lower half 10b Upper half of test room 15 Heat transfer rubber sheet 20 Plate heat pipe 30 Basket heat pipe 40 Flat plate heat pipe 50 Semiconductor wafer 60 Heat transfer plate 70 Electrode plate 80 Current carrying substrate

Claims (5)

[Claims] 1. A wafer temperature adjusting plate in a semiconductor wafer burn-in apparatus, wherein the plate has a smooth surface on the upper surface of a thermally conductive plate, and a heat-dissipating plate in the disk. A plate-type heat pipe enclosing a pipe working fluid is buried therein, and a heater is provided at a lower portion of the thermally conductive plate body. . 2. A wafer temperature control plate in a semiconductor wafer burn-in apparatus, wherein the plate has a smooth surface on an upper surface of a thermally conductive plate, and the plate is connected to the plate by a connecting pipe. A cage-type heat pipe, in which a heat pipe working fluid is sealed in a cage-like hollow pipe formed by arranging a plurality of different-diameter hollow rings concentrically around the same center line, is buried, A temperature adjustment plate for a semiconductor wafer in a burn-in apparatus, wherein a heater is provided below the thermally conductive plate. 3. A test chamber is formed outside the temperature control plate so as to include at least a test device including a temperature control plate, a wafer, and a wafer energizing means during a wafer burn-in test. The temperature control plate for a semiconductor wafer according to claim 1, wherein: 4. The operation of the heater by a temperature detector for detecting the temperature of the peripheral portion of the wafer or the vicinity of the peripheral portion of the wafer during the test, and a temperature detector for detecting the temperature of the central portion of the wafer or the proximity of the central portion of the wafer. Is configured to be controlled.
The temperature control plate according to any one of the above. 5. A ring-shaped rising wall is formed on the peripheral edge of the surface of the thermally conductive plate-shaped body, and is configured to surround the side of the wafer by the rising wall during a wafer burn-in test. The temperature control plate according to claim 1, wherein