JPH11162998A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To reduce the number of manufacturing steps and the manufacturing cost in manufacturing a resin-sealed semiconductor device. SOLUTION: On a silicon wafer 1 on which a plurality of semiconductor elements 2 are formed, in a region where the semiconductor elements 2 are formed, an adhesive resin 5 having an opening at a semiconductor element electrode 3 is disposed, and leads are formed. The frame 4 is fixed to the silicon wafer 1 via the bonding resin 5, the semiconductor element electrodes 3 are electrically connected to the lead frame 4 by using the thin metal wires 6, and after sealing with the potting resin 7, the dicing saw Is cut and divided for each semiconductor element 2 to form a semiconductor device.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a resin-sealed semiconductor device and a method of manufacturing the same.

[0002]

2. Description of the Related Art FIGS. 7 and 8 are views for explaining a conventional method of manufacturing a semiconductor device. In the figure, 1 is a silicon wafer, 2 is a semiconductor element, 3 is a semiconductor element electrode formed on the semiconductor element 2, 4 is a lead frame, 6 is a thin metal wire, 9 is a cutting line, 10 is a die bond resin,
Reference numeral 1 denotes a mold resin made of an epoxy resin or the like. The plurality of semiconductor elements 2 formed on the silicon wafer 1
Cut along a cutting line 9 by a dicing saw,
It is divided into individual semiconductor elements 2. Thereafter, the singulated semiconductor element 2 is fixed on a die pad of a lead frame 4 with a die bond resin 10, and the semiconductor element electrode 3 on the semiconductor element 2 and the lead frame 4 are electrically connected by a thin metal wire 6. Finally, a semiconductor device is formed by sealing the semiconductor element 2 mounted on the lead frame 4 using the mold resin 11.

[0003]

A conventional resin-encapsulated semiconductor device is manufactured by the above-described method. After a plurality of semiconductor elements 2 formed on a silicon wafer 1 are divided, individual semiconductor elements 2 are formed. Semiconductor device 2 to lead frame 4
However, there are problems in that the number of manufacturing steps is large and the manufacturing cost is high because the die bonding is performed and sealing is performed with the mold resin 11.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems. In manufacturing a resin-encapsulated semiconductor device, the number of manufacturing steps is reduced, thereby reducing the manufacturing cost. The purpose is to reduce the price.

[0005]

A semiconductor device according to the present invention comprises a semiconductor element, a lead frame electrically connected to an electrode formed on one surface of the semiconductor element, and a semiconductor element covering one surface of the semiconductor element. A semiconductor package having the same size is provided with a sealing resin, and an end portion of the lead frame is flush with an end surface of the sealing resin, and a part of the lead frame is exposed on one surface of the sealing resin. Is what is being done.

Further, in the manufacturing method according to the present invention, a step of forming a plurality of semiconductor elements on a silicon wafer and a step of bonding a lead frame to the silicon wafer on which the plurality of semiconductor elements are formed are performed. A step of electrically connecting the frame, a step of supplying a sealing resin onto the silicon wafer, and resin-sealing the joint surface between the electrode on the semiconductor element and the lead frame, and a step of applying the resin-sealed silicon wafer to the semiconductor element. It includes a step of dividing into units. The bonding between the silicon wafer and the lead frame is performed using a bonding resin applied on the silicon wafer, and the electrical connection between the electrode on the semiconductor element and the lead frame is performed using a thin metal wire. Alternatively, the bonding between the silicon wafer and the lead frame and the electrical connection between the electrodes on the semiconductor element and the lead frame are performed via conductive bumps provided on the semiconductor element. The sealing resin uses a low-viscosity potting method resin.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 Hereinafter, a semiconductor device according to an embodiment of the present invention and a method for manufacturing the same will be described with reference to the drawings. FIG. 1 is a cross-sectional view of a semiconductor device according to a first embodiment of the present invention, and FIGS. 2, 3, 4 and 5, (a) is a plan view, (b)
FIG. 3A is a cross-sectional view along the line AA in FIG. In the figure, 1 is a silicon wafer, 2 is a semiconductor element, 3 is a semiconductor element electrode, 4 is a lead frame, 5 is a film that can be bonded to both sides, for example, an adhesive resin such as DF-335 (manufactured by Hitachi Chemical), and 6 is a semiconductor. A thin metal wire 7 for electrically connecting the element electrode 3 and the lead frame 4 is a low-viscosity epoxy resin, for example, a potting resin made of semi-coat 115 (manufactured by Shin-Etsu Chemical) or the like.

Next, a manufacturing method will be described. First, a plurality of semiconductor elements 2 are formed on a silicon wafer 1 as shown in FIG. Next, FIG. 3A and FIG.
As shown in FIG. 2B, an adhesive resin 5 having an opening at the semiconductor element electrode 3 is formed in a region of the silicon wafer 1 where the semiconductor element 2 is formed by using a photolithography method or the like. Next, as shown in FIGS. 4A and 4B, the lead frame 4 is fixed on the silicon wafer 1 on which the semiconductor element 2 is formed via an adhesive resin 5,
Semiconductor element electrode 3 in which bonding resin 5 is opened and exposed.
And the lead frame 4 is electrically connected using the thin metal wires 6. Next, as shown in FIGS. 5A and 5B, a potting resin 7 is supplied onto the silicon wafer 1 to seal the bonding surface between the semiconductor element electrode 3 and the lead frame 4 with resin. Finally, the silicon wafer 1 is cut into individual semiconductor elements 2 by using a dicing saw, and is subjected to a singulation process.
Through the above steps, a semiconductor device in which the semiconductor element electrode 3 is electrically connected to the lead frame 4 by the thin metal wire 6 and the size of the semiconductor package sealed with the potting resin 7 is the same as that of the semiconductor element 2 is obtained.

According to the present invention, the plurality of semiconductor elements 2
In the state of the silicon wafer 1 on which is formed, the semiconductor wafer is bonded to the lead frame 4 and resin sealing is also performed, so that the number of manufacturing steps can be reduced and the manufacturing cost can be reduced. Further, in the semiconductor device according to the present invention, the size of the semiconductor element 2 becomes the size (in terms of mounting area) of the resin-sealed package as it is, so that the semiconductor device can be downsized.

Embodiment 2 In the first embodiment, the semiconductor element electrode 3 and the lead frame 4 are electrically connected by using the thin metal wires 6, but as shown in FIG. 6, the semiconductor element electrode 3 is formed by using a conductive bump such as solder or gold. The lead frame 3 and the lead frame 4 may be electrically connected. In this case, the same effect as in the first embodiment can be obtained, and the bonding resin 5 for fixing the lead frame 4 to the silicon wafer 1 can be obtained.
Becomes unnecessary. In the figure, reference numeral 8 denotes a bump made of solder, gold, or the like. The same parts as those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted. In the method of manufacturing a semiconductor device according to the present embodiment, a bump 8 is formed on a semiconductor element electrode 3 of a silicon wafer 1 on which a plurality of semiconductor elements 2 are formed by a plating method or a stud bump method. The lead frame 4 is arranged on the bumps 8 while being heated from the side, and bonded by pressing. After that, the first embodiment
After sealing with the potting resin 7 in the same manner as described above,
A semiconductor device is obtained by cutting and dividing each semiconductor element 2 using a dicing saw.

[0011]

As described above, according to the present invention, since a silicon wafer on which a plurality of semiconductor elements are formed is bonded and electrically connected to a lead frame and then resin-sealed, The number of manufacturing steps can be reduced, the manufacturing cost can be reduced, and the cost of the semiconductor device can be reduced. Further, in the semiconductor device according to the present invention, the size of the semiconductor element becomes the size of the package sealed with resin as it is, so that the semiconductor device can be downsized.
According to the fourth aspect of the present invention, the bonding between the silicon wafer and the lead frame and the electrical connection between the semiconductor element electrode and the lead frame can be performed by the metal bumps, and the bonding for fixing the silicon wafer and the lead frame can be performed. No resin is required. Further, according to the invention of claim 5, since a low-viscosity resin is used as the sealing resin, the resin sealing can be reliably performed by the potting method.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a semiconductor device according to a first embodiment of the present invention;

FIG. 2 is a view illustrating a manufacturing process of the semiconductor device according to the first embodiment of the present invention;

FIG. 3 is a view illustrating a manufacturing process of the semiconductor device according to the first embodiment of the present invention;

FIG. 4 is a view illustrating a manufacturing process of the semiconductor device according to the first embodiment of the present invention;

FIG. 5 is a view illustrating a manufacturing process of the semiconductor device according to the first embodiment of the present invention;

FIG. 6 is a sectional view showing a semiconductor device according to a second embodiment of the present invention;

FIG. 7 is a view showing a manufacturing process of a conventional semiconductor device of this kind.

FIG. 8 is a sectional view showing a conventional semiconductor device.

[Explanation of symbols]

1 Silicon wafer, 2 Semiconductor element, 3 Semiconductor element electrode, 4 Lead frame, 5 Adhesive resin, 6 Metal wire, 7 Potting resin, 8 Bump.

Claims (5)

[Claims] A semiconductor device, a lead frame electrically connected to an electrode formed on one surface of the semiconductor device, and a semiconductor package covering one surface of the semiconductor device and having the same size as the semiconductor device. An end portion of the lead frame is flush with an end surface of the sealing resin, and a part of the lead frame is configured to be exposed on one surface of the sealing resin. Characteristic semiconductor device. 2. A step of forming a plurality of semiconductor elements on a silicon wafer, a step of bonding a lead frame to the silicon wafer, and electrically connecting electrodes on the semiconductor element to the lead frame; A step of supplying a sealing resin onto the wafer and resin sealing the bonding surface between the electrode and the lead frame on the semiconductor element; and a step of dividing the resin-sealed silicon wafer into the semiconductor element units A method for manufacturing a semiconductor device, comprising: 3. The bonding between the silicon wafer and the lead frame is performed using a bonding resin applied on the silicon wafer, and the electrical connection between the electrode on the semiconductor element and the lead frame is performed using a thin metal wire. 3. The method for manufacturing a semiconductor device according to claim 2, wherein: 4. The bonding between a silicon wafer and a lead frame and the electrical connection between an electrode on a semiconductor element and the lead frame are performed via conductive bumps provided on the semiconductor element. The method for manufacturing a semiconductor device according to claim 2. 5. The method for manufacturing a semiconductor device according to claim 2, wherein the sealing resin is a low-viscosity potting method resin.