JPH11168273A - Wiring formation - Google Patents
Wiring formationInfo
- Publication number
- JPH11168273A JPH11168273A JP9345700A JP34570097A JPH11168273A JP H11168273 A JPH11168273 A JP H11168273A JP 9345700 A JP9345700 A JP 9345700A JP 34570097 A JP34570097 A JP 34570097A JP H11168273 A JPH11168273 A JP H11168273A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- liquid
- light
- laser
- control device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000007788 liquid Substances 0.000 claims abstract description 54
- 230000002950 deficient Effects 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 9
- 230000008439 repair process Effects 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 150000002902 organometallic compounds Chemical class 0.000 claims description 6
- HFDWIMBEIXDNQS-UHFFFAOYSA-L copper;diformate Chemical compound [Cu+2].[O-]C=O.[O-]C=O HFDWIMBEIXDNQS-UHFFFAOYSA-L 0.000 abstract description 21
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 abstract description 18
- 235000011187 glycerol Nutrition 0.000 abstract description 9
- 239000011259 mixed solution Substances 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000000243 solution Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 23
- 239000010949 copper Substances 0.000 description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 13
- 239000007864 aqueous solution Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000002835 absorbance Methods 0.000 description 5
- 239000004094 surface-active agent Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- LLELBRKILZDMBL-UHFFFAOYSA-L OCC(O)CO.C(=O)[O-].[Cu+2].C(=O)[O-] Chemical compound OCC(O)CO.C(=O)[O-].[Cu+2].C(=O)[O-] LLELBRKILZDMBL-UHFFFAOYSA-L 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 150000004683 dihydrates Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000007602 hot air drying Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 150000004685 tetrahydrates Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は配線形成方法に関するも
のであり、なかでも光分解性の金属化合物の分解による
配線形成方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a wiring, and more particularly to a method for forming a wiring by decomposing a photodecomposable metal compound.
【０００２】[0002]
【従来の技術】従来配線基板に形成された配線の欠落部
分の補修は次のように行われていた。印刷回路基板の銅
パターンの欠落部分に銅片をあてがい、スポット溶接す
る。銅片が欠落部分の両側を接続し欠落部分が銅により
補修される。銅片に代え、銀片を使用することもある。
あるいは銀ペーストを塗布することもある。2. Description of the Related Art Conventionally, repair of a missing portion of a wiring formed on a wiring board has been performed as follows. A copper piece is applied to the missing portion of the copper pattern of the printed circuit board, and spot welding is performed. A piece of copper connects both sides of the missing portion and the missing portion is repaired with copper. Silver pieces may be used instead of copper pieces.
Alternatively, a silver paste may be applied.
【０００３】又次のような方法によっていた。断線の如
き欠落部分を有するガラス基板等の被加工物を先ず容器
内に設置し減圧し真空状態にする。次いで容器内に約１
００°Ｃに加熱し気化した金属カルボルニを注入する。
金属カルボルニとしてはモリブデンカルボニルＭｏ（Ｃ
Ｏ）6 、タングステンカルボニルＷ（ＣＯ）6 、金カル
ボニルＡｕ（ＣＯ）6 等が使用され、それぞれモリブデ
ンＭｏ、タングステンＷ、金Ａｕの析出するものであ
る。容器には透過窓が設けられ、この窓からレーザ光で
欠落部分を照射する。金属カルボルニがその照射された
箇所において分解し、金属が析出する。欠落部分は析出
した金属により補修される。Further, the following method has been used. A workpiece such as a glass substrate having a broken portion such as a broken wire is first placed in a container, and the pressure is reduced to a vacuum. Then put about 1 in the container
Heated to 00 ° C. and injected the vaporized metal carbon.
Molybdenum carbonyl Mo (C
O) 6 , tungsten carbonyl W (CO) 6 , gold carbonyl Au (CO) 6 and the like are used to deposit molybdenum Mo, tungsten W, and gold Au, respectively. The container is provided with a transmission window through which the missing portion is irradiated with laser light. The metal carboni decomposes at the irradiated location, and the metal is deposited. The missing part is repaired by the deposited metal.
【０００４】[0004]
【発明が解決しようとする課題】従来の技術の前者は旧
来の人手による方法であり、欠落部分に銅片をあてが
い、スポット溶接する等の作業は人手で行われる。従っ
て人手によるために多大の作業時間と人件費がかかると
いう問題があった。従来の技術の後者はいわゆるレーザ
ＣＤＶ法であり、被加工物を容器内に設置し真空にしな
くてはならない。真空容器を含む高価な装置が必要であ
り、取扱に特に注意を払わなければならない金属気体化
合物を使用し、且つ減圧等に時間がかるという問題があ
った。The former technique of the prior art is a conventional manual method, in which a copper piece is applied to a missing portion and spot welding is performed manually. Therefore, there is a problem that a large amount of work time and labor costs are required due to manual operation. The latter of the prior art is the so-called laser CDV method, in which the workpiece has to be placed in a container and evacuated. Expensive equipment including a vacuum vessel is required, and there is a problem that a metal gaseous compound that requires special care in handling is used, and it takes time to reduce the pressure and the like.
【０００５】本発明は上記の課題に鑑み、取扱の容易な
物質を使用して作業の安全性を確保し、作業時間を短縮
し、原価を低減した配線形成方法を提供し、併せて上記
方法を応用した配線形成装置及び配線補修装置を提供す
ることを目的とする。SUMMARY OF THE INVENTION In view of the above problems, the present invention provides a wiring forming method which uses a material which is easy to handle to ensure work safety, shortens working time, and reduces cost. It is an object of the present invention to provide a wiring forming apparatus and a wiring repairing apparatus to which the invention is applied.
【０００６】[0006]
【課題を解決するための手段】本発明は、配線基板上に
光分解性の金属化合物を含有する液を付着させ、前記付
着した液が形成する被膜に波長範囲６５０ｎｍより１０
００ｎｍの間の光を照射し、前記金属化合物を分解して
金属を析出させることにより前記配線基板上に配線を形
成することを特徴とする配線形成方法を構成した。According to the present invention, a liquid containing a photodecomposable metal compound is adhered onto a wiring substrate, and a film formed by the adhered liquid has a wavelength of 650 nm within a wavelength range of 650 nm.
A wiring forming method is characterized in that the wiring is formed on the wiring substrate by irradiating light of 00 nm and decomposing the metal compound to deposit a metal.
【０００７】又、光分解性の金属化合物を含有する液を
配線基板に供給し付着させる液供給手段と、前記供給さ
れた液が形成する被膜を照射する光源とを具備し、前記
光源は、波長範囲６５０ｎｍより１０００ｎｍの間にあ
る光を放射するものであることを特徴とする配線形成装
置を構成した。Further, there is provided a liquid supply means for supplying and attaching a liquid containing a photodecomposable metal compound to a wiring substrate, and a light source for irradiating a film formed by the supplied liquid, wherein the light source comprises: A wiring forming apparatus characterized by emitting light having a wavelength range of 650 nm to 1000 nm.
【０００８】又、配線基板を支持し二次元的に移動可能
な支持手段と、前記配線基板に形成された配線の欠陥部
を検出する検出手段と、前記検出手段により検出された
前記欠陥部に光分解性の金属有機化合物を含有する液を
供給する液供給手段と、前記供給された液が形成する被
膜を照射する光を放射する光源と、前記支持手段、前記
検出手段、前記液供給手段及び前記光源を制御する制御
手段とを具備することを特徴とする配線補修装置を構成
した。[0008] Further, a support means for supporting the wiring board and capable of moving two-dimensionally, a detecting means for detecting a defective portion of the wiring formed on the wiring board, and a detecting means for detecting the defective portion detected by the detecting means. Liquid supply means for supplying a liquid containing a photodegradable metal organic compound, a light source for emitting light for irradiating a film formed by the supplied liquid, the support means, the detection means, and the liquid supply means And a control means for controlling the light source.
【０００９】又、配線基板の欠陥部を検出する検出手段
と、前記検出手段により検出された前記欠陥部に光分解
性の金属有機化合物を含有する液を供給する液供給手段
と、前記供給された液が形成する被膜を照射する光を放
射する光源と、前記支持手段、前記検出手段、前記液供
給手段及び前記光源を制御する制御手段と、前記検出手
段、前記液供給手段及び前記光源を支持し二次元的に移
動可能な支持手段とを具備することを特徴とする配線補
修装置を構成した。A detecting means for detecting a defective portion of the wiring board; a liquid supplying means for supplying a liquid containing a photodecomposable metal organic compound to the defective portion detected by the detecting means; A light source that emits light that irradiates a film formed by the liquid, the support unit, the detection unit, a control unit that controls the liquid supply unit and the light source, and the detection unit, the liquid supply unit, and the light source. And a supporting means capable of supporting and moving two-dimensionally.
【００１０】好ましくは、前記光源が放射する光は、波
長範囲６５０ｎｍより１０００ｎｍの間の光であること
を特徴とする請求項３又は請求項４に記載の配線補修装
置を構成した。[0010] Preferably, the light emitted from the light source is light in a wavelength range of 650 nm to 1000 nm, and the wiring repair apparatus according to claim 3 or 4 is constituted.
【００１１】[0011]
【作用】配線基板上に金属有機化合物を含む液体を付着
させて被膜を形成し、波長範囲６５０ｎｍより１０００
ｎｍの間の光が照射されて、効率よく被膜から金属が析
出する。A liquid containing a metal organic compound is deposited on a wiring substrate to form a film, and a wavelength range of 650 nm to 1000 nm.
When the light is irradiated for a period of nm, the metal is efficiently deposited from the coating.
【００１２】[0012]
【実施例】本発明の一実施例に係る配線補修装置を図１
〜図６により説明する。図１は配線基板上の配線の一部
を示す平面図、図２は配線の欠陥部分の拡大図、図３は
補修された欠陥部分の拡大図、図４は配線補修装置の概
念図、図５はぎ酸銅水溶液の吸光度曲線、図６はレーザ
の放射光の波長分布図である。配線基板１は支持台２に
水平に支持され、支持台２はＸ−Ｙ移動装置３の上に載
置されている。配線基板１の上方には、欠陥検出器４、
液体流出器５、熱風噴出器６及びレーザ７がそれぞれ配
線８の欠陥部９に対向して配置されている。欠陥検出器
４は対物レンズを有する光学系で、欠陥部９に焦点が合
致している。欠陥検出器４による欠陥部９の像の情報は
回線４を介してコンピュータを内蔵する制御装置１０に
出力され、制御装置１０は欠陥部９を認識する。モニタ
１１は回線１１ａを介して制御装置１０に接続し、欠陥
部９の像はモニタ１１で視認することができる。FIG. 1 shows a wiring repair apparatus according to one embodiment of the present invention.
This will be described with reference to FIG. 1 is a plan view showing a part of a wiring on a wiring board, FIG. 2 is an enlarged view of a defective portion of the wiring, FIG. 3 is an enlarged view of a repaired defective portion, and FIG. 5 is an absorbance curve of the aqueous copper formate solution, and FIG. 6 is a wavelength distribution diagram of laser radiation. The wiring board 1 is horizontally supported by a support 2, and the support 2 is placed on an XY moving device 3. Above the wiring board 1, a defect detector 4,
The liquid outlet 5, the hot air ejector 6, and the laser 7 are arranged to face the defective portions 9 of the wiring 8, respectively. The defect detector 4 is an optical system having an objective lens, and the focal point coincides with the defect 9. Information on the image of the defective portion 9 by the defect detector 4 is output to a control device 10 containing a computer via the line 4, and the control device 10 recognizes the defective portion 9. The monitor 11 is connected to the control device 10 via the line 11a, and the image of the defective portion 9 can be visually recognized on the monitor 11.
【００１３】液体流出器５には、ぎ酸銅とグリセリンと
の混和液が保持されている。液体流出器５は回線５ａを
介して制御装置１０に接続し、制御装置１０が欠陥部９
を認識すると、制御装置１０の出力により混和液を流出
させ、欠陥部９に付着させる。熱風噴出器６は約２００
°Ｃの熱風を噴出する送風器である。熱風噴出器６は回
線６ａを介して制御装置１０に接続し、制御装置１０が
欠陥部９を認識すると、制御装置１０の出力により熱風
を噴出し、欠陥部９に付着した混和液を乾燥する。レー
ザ７は波長範囲７９０〜８４０ｎｍの光を放射する大出
力半導体レーザである。レーザ７は、回線７ａを介して
制御装置１０に接続している。制御装置１０が欠陥部９
を認識し、混和液が液体流出器５から流出され、熱風噴
出器６による乾燥が終了すると、制御装置１０の出力に
より光の放射が行われる。Ｘ−Ｙ移動装置３は回線３ａ
を介して制御装置１０に接続している。The liquid outflow device 5 holds a mixed liquid of copper formate and glycerin. The liquid outflow device 5 is connected to a control device 10 via a line 5a, and the control device 10
Is recognized, the mixed liquid is caused to flow out by the output of the control device 10 and adheres to the defective portion 9. Hot air blower 6 is about 200
It is a blower that blows out hot air at ° C. The hot air blower 6 is connected to the control device 10 via the line 6a. When the control device 10 recognizes the defective portion 9, the hot air is blown out by the output of the control device 10 to dry the admixture adhering to the defective portion 9. . The laser 7 is a high-power semiconductor laser that emits light in a wavelength range of 790 to 840 nm. The laser 7 is connected to the control device 10 via a line 7a. The control unit 10 detects the defect 9
When the mixed liquid is discharged from the liquid outlet 5 and the drying by the hot air ejector 6 is completed, light is emitted by the output of the controller 10. XY mobile unit 3 is line 3a
Is connected to the control device 10 via the.
【００１４】次にぎ酸銅とグリセリンとの混和液につい
て説明する。ぎ酸銅には無水物（（ＨＣＯＯ）2 Ｃ
ｕ）、二水和物（（ＨＣＯＯ）2 Ｃｕ・２Ｈ2 Ｏ）及び
四水和物（（ＨＣＯＯ）2 Ｃｕ・４Ｈ2 Ｏ）が通常容易
に入手し得る結晶である。ぎ酸銅は高価でなく、毒性が
なく、空気中で速いスキャンニング速度の照射光で金属
銅に分解するので、銅による補修に適当である。析出し
た銅は良い電導度を示す。ぎ酸銅を水に溶解して得たぎ
酸銅水溶液は、配線基板上に付着乃至塗布されると、数
時間内にぎ酸銅が結晶化する。被膜が厚い程早く結晶化
し易い。結晶化した部分は透明から青まで種々の色を示
し、それぞれレーザ光の吸収が異なる。補修の一様性の
ためには結晶化は避けなければならない。このためにぎ
酸銅水溶液にグリセリンを添加する。グリセリンは不揮
発性で、毒性がなく結晶化に対する安定性を確保するた
めに安価で適当である。安定性を確保するためには、グ
リセリン以外のものでもよく、例えばポリビニールアル
コール等も使用可能である。混合の割合は飽和ぎ酸銅水
溶液２ｍｌに対して、１０％グリセリン水溶液０．２ｍ
ｌ〜１．０ｍｌとを添加する。添加量が０．２ｍｌ以下
では結晶化し、１．０ｍｌ以上では被膜性状がよくな
い。０．２５ｍｌ加えたものは結晶化せず、かつ銅の含
有量が大きく、且つ基板上に熱風乾燥で形成された被膜
は良い性状を示す。Next, a mixed solution of copper formate and glycerin will be described. Anhydrous ((HCOO) 2 C
u), dihydrate ((HCOO) 2 Cu.2H 2 O) and tetrahydrate ((HCOO) 2 Cu.4H 2 O) are usually readily available crystals. Copper formate is inexpensive, non-toxic, and decomposes to metallic copper with irradiation at high scanning rates in air, and is suitable for copper repair. The deposited copper shows good conductivity. When an aqueous copper formate solution obtained by dissolving copper formate in water is adhered or applied on a wiring board, the copper formate crystallizes within several hours. The thicker the film, the easier it is to crystallize faster. The crystallized portion shows various colors from transparent to blue, and has different laser light absorptions. Crystallization must be avoided for repair uniformity. For this purpose, glycerin is added to the aqueous copper formate solution. Glycerin is non-volatile, non-toxic and inexpensive and suitable to ensure stability against crystallization. In order to ensure stability, a material other than glycerin may be used. For example, polyvinyl alcohol or the like can be used. The mixing ratio is 0.2 m of 10% glycerin aqueous solution for 2 ml of saturated copper formate aqueous solution.
Add 1-1.0 ml. When the added amount is 0.2 ml or less, crystallization occurs, and when the added amount is 1.0 ml or more, the film properties are poor. When 0.25 ml is added, the film does not crystallize, has a high copper content, and the film formed on the substrate by hot air drying shows good properties.
【００１５】ぎ酸銅−グリセリンの水溶液には表面活性
剤を添加することもある。これは配線基板上に水溶液を
やや広い面積で塗布する場合に必要であって、表面性状
の平滑化のためである。平滑でないと照射による銅の析
出の一様性が低下する。A surfactant may be added to the aqueous solution of copper formate-glycerin. This is necessary when the aqueous solution is applied to the wiring substrate over a relatively large area, and is for smoothing the surface properties. If the surface is not smooth, the uniformity of copper deposition due to irradiation will be reduced.
【００１６】次に動作について説明する。配線基板１を
支持台４上に水平に載置する。欠陥検出器４の焦点は自
動的に配線基板１の表面に合致する。そこに欠陥部９が
あるとその情報は欠陥検出器４による欠陥部９の像とし
て捉えられ、回線４を介して制御装置１０に出力され
る。制御装置１０は欠陥部９を認識し、その座標位置を
記憶する。欠陥部９の像は回線１１ａを介してモニタ１
１において視認することができる。制御装置１０から欠
陥部９の座標位置の情報が回線５ａを介して液体流出器
５に出力され、液体流出器５は欠陥部９に混和液を流出
させ、欠陥部９に付着させる。制御装置１０から回線６
ａを介して、欠陥部９の座標位置の情報、及び液体流出
器５からの混和液の流出、欠陥部９への付着が終了した
ことの情報が出力されると、熱風噴出器６から熱風の噴
出が開始し、所定の時間、例えば１０秒経過すると乾燥
が行われ、噴射は停止する。制御装置１０から回線７ａ
を介して、欠陥部９の座標位置の情報、及び熱風噴出器
６から熱風の噴出が終了したとの情報が出力され、レー
ザ７はレーザ光の放射を所定時間、例えば０・００１
秒、行う。レーザ７は７９０〜８４０ｎｍのレーザ光を
放射する。レーザ７の照射は集光スポット径６００μｍ
で行われ、出力は１〜２ｗ、照射時間は付着すべき面積
により０．５〜５秒の範囲で異なっている。Next, the operation will be described. The wiring board 1 is placed horizontally on the support 4. The focus of the defect detector 4 automatically matches the surface of the wiring board 1. If there is a defect 9 there, the information is captured as an image of the defect 9 by the defect detector 4 and output to the control device 10 via the line 4. The control device 10 recognizes the defective portion 9 and stores the coordinate position. The image of the defective portion 9 is displayed on the monitor 1 via the line 11a.
1 can be seen. Information on the coordinate position of the defective portion 9 is output from the control device 10 to the liquid outflow device 5 via the line 5a. Line 6 from controller 10
When the information on the coordinate position of the defective portion 9 and the information indicating that the mixed liquid has flowed out from the liquid outflow device 5 and that the adhesion to the defective portion 9 has been completed are output through the hot air blower 6, Is started, and after a predetermined time, for example, 10 seconds, drying is performed, and the injection is stopped. Line 7a from controller 10
, Information on the coordinate position of the defective portion 9 and information indicating that the hot air jetting has been completed is output from the hot air jetting device 6, and the laser 7 emits laser light for a predetermined time, for example, 0.001.
Seconds, do. The laser 7 emits 790 to 840 nm laser light. Irradiation of the laser 7 has a focused spot diameter of 600 μm
The output varies from 1 to 2 watts, and the irradiation time varies from 0.5 to 5 seconds depending on the area to be adhered.
【００１７】レーザ光が欠陥部９に付着した混和液の、
乾燥した被膜を照射すると、金属銅が析出する。図２に
示す欠陥部９の両側の配線の端部１２ａ、１２ｂの間
は、図３に示すように金属銅の析出部１３で接続し、欠
陥が補修される。一の欠陥部の補修が終了すると、この
情報は制御装置１０から回線３ａを介して、Ｘ−Ｙ移動
装置３に伝達される。Ｘ−Ｙ移動装置３は自動的に移動
して、次の欠陥部を検出し、補修を行う。The mixture of the laser light adhering to the defect 9
Irradiating the dried film deposits metallic copper. Between the ends 12a and 12b of the wiring on both sides of the defective portion 9 shown in FIG. 2, a connection is made by a metal copper deposition portion 13 as shown in FIG. 3, and the defect is repaired. When the repair of one defective portion is completed, this information is transmitted from the control device 10 to the XY moving device 3 via the line 3a. The XY moving device 3 automatically moves, detects the next defective portion, and repairs it.
【００１８】全ての欠陥部の補修が終了したら、配線基
板１を水を満たした超音波洗浄槽で２０秒洗浄洗浄し、
残存するぎ酸銅、グリセリン及び表面活性剤を添加した
ときは表面活性剤を洗い去る。析出した金属部分は強く
配線基板に付着し、テープテストを行っても剥離するこ
とはない。After repairing all the defective parts, the wiring board 1 is washed and cleaned in an ultrasonic cleaning bath filled with water for 20 seconds.
When the remaining copper formate, glycerin and surfactant have been added, wash off the surfactant. The deposited metal part strongly adheres to the wiring board, and does not peel off even when a tape test is performed.
【００１９】ここで、使用されるレーザ光の波長範囲と
ぎ酸銅との関係について説明する。ぎ酸銅の水溶液の吸
光度は、図５に示すように、７８０ｎｍ付近に極大値が
あり、又６５０ｎｍ付近では極大値の約１／２の大きさ
である。６５０ｎｍより短波長側で小さくなり、やがて
約３００ｎｍ付近より急激に増大する。ぎ酸銅の光分解
は光が吸収されて生起するものであるから照射光には吸
光度の大きい６５０ｎｍ以上の波長範囲の光が望まし
い。他方６５０ｎｍ以上の波長範囲の光を放射する使用
しやすい大出力レーザは種々のものが廉価且つ容易に入
手可能である。本実施例で使用するレーザは波長範囲７
９０〜８４０ｎｍの光を放射する大出力半導体レーザで
ある。その波長範囲は図６の線Ａに示す範囲であり、こ
の範囲で任意の波長で、波長幅が凡そ±５ｎｍの光を放
射する。なお波長が１０００ｎｍを超える光を放射する
レーザには実用的なものはない。Here, the relationship between the wavelength range of the laser beam used and copper formate will be described. As shown in FIG. 5, the absorbance of the aqueous solution of copper formate has a maximum value near 780 nm, and is about １ ／ of the maximum value near 650 nm. It becomes smaller on the shorter wavelength side than 650 nm, and then rapidly increases from about 300 nm. Since photodecomposition of copper formate is caused by the absorption of light, the irradiation light is preferably light having a large absorbance and a wavelength range of 650 nm or more. On the other hand, various easy-to-use high-power lasers that emit light in the wavelength range of 650 nm or more are inexpensive and easily available. The laser used in this embodiment has a wavelength range of 7
It is a high power semiconductor laser that emits light of 90 to 840 nm. The wavelength range is a range shown by a line A in FIG. 6, and light having an arbitrary wavelength and a wavelength width of about ± 5 nm is emitted in this range. Note that there is no practical laser for emitting light having a wavelength exceeding 1000 nm.
【００２０】この実施例での他の実施態様では、欠陥検
出器４による欠陥部９の存在、大きさ及び性状の検出及
び液体流出器５からの混和液の流出付着を全欠陥部にお
いて行い、しかる後熱風噴出器６からの熱風の噴出を行
い、レーザ７のレーザ光放射を行う。このようにする
と、最も時間を要する熱風の噴出が連続して一回で済む
から、全作業が短時間で行うことができる。この方法に
よれば、全欠陥部を再度にわたって補修作業を繰り返し
行うことが短時間に行うことができる。In another embodiment of this embodiment, the presence, size and properties of the defective portion 9 by the defect detector 4 and the outflow and adhesion of the mixed liquid from the liquid discharger 5 are performed in all the defective portions. Thereafter, hot air is blown from the hot air blower 6 to emit laser light from the laser 7. With this configuration, the hot air that requires the most time can be continuously blown out only once, so that the entire operation can be performed in a short time. According to this method, it is possible to perform the repair work repeatedly over all the defective portions in a short time.
【００２１】次に第２の実施例に係る配線形成装置を図
７により説明する。図７は配線補修装置の概念図であ
る。又前述した一実施例と同一又は類似の点の説明は省
略する。配線基板１は支持台２に水平に支持されてい
る。欠陥検出器４、液体流出器５、熱風噴出器６及びレ
ーザ１６は支持移動装置１５に支持され、それぞれ欠陥
部９に対向して配置されている。支持移動装置１５は架
台（（不図示）に水平移動可能に支持され、又液体流出
器５にはぎ酸銅を含む混和液が保持されている。制御装
置１０はコンピュータを内蔵し支持移動装置１５、欠陥
検出器４、液体流出器５、熱風噴出器６及びレーザ１６
を制御する。レーザ１６は波長範囲９００〜９８０ｎｍ
の光を放射する大出力半導体レーザである。Next, a wiring forming apparatus according to a second embodiment will be described with reference to FIG. FIG. 7 is a conceptual diagram of the wiring repair device. Further, description of the same or similar points as in the above-described embodiment will be omitted. The wiring board 1 is horizontally supported by the support 2. The defect detector 4, the liquid outflow device 5, the hot air ejector 6, and the laser 16 are supported by the supporting and moving device 15, and are respectively arranged to face the defect portions 9. The supporting / moving device 15 is supported on a gantry (not shown) so as to be able to move horizontally, and an admixture containing copper formate is held in the liquid outflow device 5. The control device 10 has a built-in computer and the supporting / moving device 15 , Defect detector 4, liquid outflow device 5, hot air jet device 6, and laser 16
Control. The laser 16 has a wavelength range of 900 to 980 nm.
Is a high-power semiconductor laser that emits light.
【００２２】次に動作について説明する。配線基板１を
支持台２上に水平に載置する。欠陥検出器４は配線基板
１に欠陥部９があるとその情報を制御装置１０に出力す
る。制御装置１０は欠陥部９を認識し、その座標位置を
記憶する。制御装置１０から欠陥部９の座標位置の情報
を液体流出器５に出力する。液体流出器５は欠陥部９に
混和液を流出させ、欠陥部９に付着させる。制御装置１
０から欠陥部９の座標位置の情報、及び液体流出器５か
らの混和液の流出、欠陥部９への付着が終了したことの
情報を熱風噴出器６に出力する。熱風噴出器６から熱風
が噴出し乾燥が行わる。制御装置１０から欠陥部９の座
標位置の情報、及び熱風噴出器６から熱風の噴出が終了
したとの情報がレーザ１６に出力する。レーザ１６は波
長範囲９００〜９８０ｎｍの光を放射する。その波長範
囲は図６の線Ｂに示す範囲であり、この範囲で任意の波
長で、波長幅が凡そ±５ｎｍの光を放射する。レーザ光
が乾燥した被膜を照射すると、金属銅が析出し、欠陥部
９が補修される。Next, the operation will be described. The wiring board 1 is placed horizontally on the support 2. The defect detector 4 outputs the information to the control device 10 when there is a defect 9 in the wiring board 1. The control device 10 recognizes the defective portion 9 and stores the coordinate position. The control unit 10 outputs information on the coordinate position of the defect 9 to the liquid outflow device 5. The liquid outflow device 5 causes the mixed liquid to flow out to the defective portion 9 and adhere to the defective portion 9. Control device 1
From 0, information on the coordinate position of the defective portion 9 and information that the outflow of the mixture from the liquid outflow device 5 and the attachment to the defective portion 9 have been completed are output to the hot air blower 6. Hot air is blown from the hot air blower 6 to perform drying. The control device 10 outputs to the laser 16 the information on the coordinate position of the defective portion 9 and the information that the hot air blower 6 has finished blowing hot air. Laser 16 emits light in the wavelength range 900-980 nm. The wavelength range is the range shown by the line B in FIG. 6, and light with an arbitrary wavelength and a wavelength width of about ± 5 nm is emitted in this range. When the laser light irradiates the dried film, metallic copper precipitates and the defective portion 9 is repaired.
【００２３】一の欠陥部の補修が終了すると、この情報
は制御装置１０から支持移動装置１５に伝達される。支
持移動装置１５は自動的に移動して、次の欠陥部を検出
し、上記と同様にして欠陥の補修を行う。全ての欠陥部
の補修が終了したら、配線基板１を水を満たした超音波
洗浄槽で２０秒洗浄洗浄し、残存するぎ酸銅、グリセリ
ン及び表面活性剤を添加したときは表面活性剤を洗い去
る。When the repair of one defective portion is completed, this information is transmitted from the control device 10 to the support moving device 15. The support moving device 15 automatically moves, detects the next defective portion, and repairs the defect in the same manner as described above. After repairing all the defective parts, the wiring board 1 is washed and cleaned in an ultrasonic cleaning bath filled with water for 20 seconds, and when the remaining copper formate, glycerin and the surfactant are added, the surfactant is washed. leave.
【００２４】一実施例及び第２の実施例においてぎ酸銅
の混合水溶液を使用したが、ぎ酸銅以外の金属化合物、
例えば酢酸銅、酢酸パラジウム等を使用することができ
るのは言うまでもない。In the first and second embodiments, a mixed aqueous solution of copper formate was used, but a metal compound other than copper formate was used.
Needless to say, for example, copper acetate, palladium acetate and the like can be used.
【００２５】[0025]
【発明の効果】本発明により、配線基板上に金属有機化
合物を含む液体を乾燥させて被膜を形成し、波長範囲６
５０ｎｍより１０００ｎｍの間の光が照射されて、効率
よく被膜から金属が析出し、配線の形成又は補修が行わ
れる。これにより、取扱の容易なぎ酸銅又はこれと同様
に安全な物質を使用して作業の安全性が確保される。又
人手に頼らないから、作業時間の短縮と人件費の軽減に
よる原価低減とが可能となる。さらに被加工物を真空容
器内に設置することがないので、設備費の軽減による原
価低減、及び作業時間の短縮が可能となる。According to the present invention, a liquid containing a metal organic compound is dried on a wiring board to form a film, and a wavelength range of 6
Light between 50 nm and 1000 nm is irradiated, so that metal is efficiently deposited from the film, and wiring formation or repair is performed. As a result, work safety is ensured by using copper formate which is easy to handle or a material which is safe similarly. Further, since it does not rely on manual labor, it is possible to reduce the working time and the cost by reducing the labor cost. Further, since the workpiece is not set in the vacuum vessel, the cost can be reduced by reducing the equipment cost, and the working time can be reduced.
【図１】本発明の一実施例に係る配線基板上の配線の一
部を示す平面図である。FIG. 1 is a plan view showing a part of a wiring on a wiring board according to one embodiment of the present invention.
【図２】本発明の一実施例に係る配線の欠陥部分の拡大
図である。FIG. 2 is an enlarged view of a defective portion of a wiring according to one embodiment of the present invention.
【図３】本発明の一実施例に係る補修された欠陥部分の
拡大図である。FIG. 3 is an enlarged view of a repaired defect portion according to an embodiment of the present invention.
【図４】本発明の一実施例に係る配線補修装置の概念図
である。FIG. 4 is a conceptual diagram of a wiring repair apparatus according to one embodiment of the present invention.
【図５】ぎ酸銅水溶液の吸光度曲線である。FIG. 5 is an absorbance curve of an aqueous solution of copper formate.
【図６】レーザの放射光の波長分布図である。FIG. 6 is a wavelength distribution diagram of radiation light of a laser.
１・・・配線基板、４・・・欠陥検出器、５・・・液体
流出器、６・・・熱風噴出器、７、１６・・・レーザ、
８・・・配線、９・・・欠陥部、１２ａ、１２ｂ・・・
配線の端部、１３・・・析出部、DESCRIPTION OF SYMBOLS 1 ... Wiring board, 4 ... Defect detector, 5 ... Liquid outflow device, 6 ... Hot air blower, 7, 16 ... Laser,
8 ... wiring, 9 ... defective part, 12a, 12b ...
End of wiring, 13 ... deposition part,
─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成１０年２月２日[Submission date] February 2, 1998
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】図面の簡単な説明[Correction target item name] Brief description of drawings
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【図面の簡単な説明】[Brief description of the drawings]
【図１】本発明の一実施例に係る配線基板上の配線の一
部を示す平面図である。FIG. 1 is a plan view showing a part of a wiring on a wiring board according to one embodiment of the present invention.
【図２】本発明の一実施例に係る配線の欠陥部分の拡大
図である。FIG. 2 is an enlarged view of a defective portion of a wiring according to one embodiment of the present invention.
【図３】本発明の一実施例に係る補修された欠陥部分の
拡大図である。FIG. 3 is an enlarged view of a repaired defect portion according to an embodiment of the present invention.
【図４】本発明の一実施例に係る配線補修装置の概念図
である。FIG. 4 is a conceptual diagram of a wiring repair apparatus according to one embodiment of the present invention.
【図５】ぎ酸銅水溶液の吸光度曲線である。FIG. 5 is an absorbance curve of an aqueous solution of copper formate.
【図６】レーザの放射光の波長分布図である。FIG. 6 is a wavelength distribution diagram of radiation light of a laser.
【図７】本発明の第２の実施例に係る配線補修装置の概
念図である。FIG. 7 is a conceptual diagram of a wiring repair device according to a second embodiment of the present invention.
【符号の説明】 １・・・配線基板、４・・・欠陥検出器、５・・・液体
流出器、６・・・熱風噴出器、７、１６・・・レーザ、
８・・・配線、９・・・欠陥部、１２ａ、１２ｂ・・・
配線の端部、１３・・・析出部、[Description of Signs] 1 ... Wiring board, 4 ... Defect detector, 5 ... Liquid outflow device, 6 ... Hot air jet device, 7, 16 ... Laser,
8 ... wiring, 9 ... defective part, 12a, 12b ...
End of wiring, 13 ... deposition part,
Claims (5)
する液を付着させ、前記付着した液が形成する被膜に波
長範囲６５０ｎｍより１０００ｎｍの間の光を照射し、
前記金属化合物を分解して金属を析出させることにより
前記配線基板上に配線を形成することを特徴とする配線
形成方法。1. A liquid containing a photodegradable metal compound is adhered on a wiring substrate, and a film formed by the adhered liquid is irradiated with light having a wavelength range of 650 nm to 1000 nm.
A wiring forming method, wherein a wiring is formed on the wiring substrate by decomposing the metal compound to deposit a metal.
基板に供給し付着させる液供給手段と、前記供給された
液が形成する被膜を照射する光源とを具備し、前記光源
は、波長範囲６５０ｎｍより１０００ｎｍの間にある光
を放射するものであることを特徴とする配線形成装置。2. A liquid supply means for supplying and adhering a liquid containing a photodegradable metal compound to a wiring board, and a light source for irradiating a film formed by the supplied liquid, wherein the light source comprises: A wiring forming apparatus which emits light having a wavelength range of 650 nm to 1000 nm.
持手段と、前記配線基板に形成された配線の欠陥部を検
出する検出手段と、前記検出手段により検出された前記
欠陥部に光分解性の金属有機化合物を含有する液を供給
する液供給手段と、前記供給された液が形成する被膜を
照射する光を放射する光源と、前記支持手段、前記検出
手段、前記液供給手段及び前記光源を制御する制御手段
とを具備することを特徴とする配線補修装置。3. A supporting means for supporting a wiring board and capable of moving two-dimensionally, a detecting means for detecting a defective portion of a wiring formed on the wiring board, and a detecting means for detecting the defective portion detected by the detecting means. Liquid supply means for supplying a liquid containing a photodegradable metal organic compound, a light source for emitting light for irradiating a film formed by the supplied liquid, the support means, the detection means, and the liquid supply means And a control means for controlling the light source.
前記検出手段により検出された前記欠陥部に光分解性の
金属有機化合物を含有する液を供給する液供給手段と、
前記供給された液が形成する被膜を照射する光を放射す
る光源と、前記支持手段、前記検出手段、前記液供給手
段及び前記光源を制御する制御手段と、前記検出手段、
前記液供給手段及び前記光源を支持し二次元的に移動可
能な支持手段とを具備することを特徴とする配線補修装
置。4. A detecting means for detecting a defective portion of a wiring board,
Liquid supply means for supplying a liquid containing a photodecomposable metal organic compound to the defective portion detected by the detection means,
A light source that emits light that irradiates a film formed by the supplied liquid, the support unit, the detection unit, a control unit that controls the liquid supply unit and the light source, and the detection unit;
An apparatus for repairing wiring, comprising: a support means for supporting the liquid supply means and the light source and capable of moving two-dimensionally.
ｎｍより１０００ｎｍの間の光であることを特徴とする
請求項３又は請求項４に記載の配線補修装置。5. The light emitted by said light source has a wavelength range of 650.
The wiring repair apparatus according to claim 3, wherein the light is light having a wavelength between 1000 nm and 1000 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9345700A JPH11168273A (en) | 1997-12-02 | 1997-12-02 | Wiring formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9345700A JPH11168273A (en) | 1997-12-02 | 1997-12-02 | Wiring formation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11168273A true JPH11168273A (en) | 1999-06-22 |
Family
ID=18378380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9345700A Pending JPH11168273A (en) | 1997-12-02 | 1997-12-02 | Wiring formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11168273A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107598376A (en) * | 2017-10-19 | 2018-01-19 | 广东正业科技股份有限公司 | A circuit board laser welding system |
| CN109089384A (en) * | 2018-09-21 | 2018-12-25 | 北京梦之墨科技有限公司 | A kind of method for repairing and mending of liquid metal printer and liquid metal printing product |
| WO2019120189A1 (en) * | 2017-12-18 | 2019-06-27 | 上海微电子装备（集团）股份有限公司 | Additive manufacturing mechanism and additive manufacturing method |
-
1997
- 1997-12-02 JP JP9345700A patent/JPH11168273A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107598376A (en) * | 2017-10-19 | 2018-01-19 | 广东正业科技股份有限公司 | A circuit board laser welding system |
| WO2019120189A1 (en) * | 2017-12-18 | 2019-06-27 | 上海微电子装备（集团）股份有限公司 | Additive manufacturing mechanism and additive manufacturing method |
| CN109089384A (en) * | 2018-09-21 | 2018-12-25 | 北京梦之墨科技有限公司 | A kind of method for repairing and mending of liquid metal printer and liquid metal printing product |
| CN109089384B (en) * | 2018-09-21 | 2019-10-11 | 北京梦之墨科技有限公司 | A kind of method for repairing and mending of liquid metal printer and liquid metal printing product |
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