JPH11131212A - Single-wafer sputtering apparatus, single-wafer sputtering method, and sputtered film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make it possible to deal with a change in deposition patterns without the replacement of a substrate susceptor and to prevent the degradation in a tact time accompanying this change by disposing the magnets of the substrate susceptor in the arrangement along the regions corresponding to all of the non-apertures of plural kinds of metal masks of different mask patterns. SOLUTION: The magnets 4 are embedded in a prescribed arrangement in the substrate holding position of the substrate susceptor 3. For example, the arrangement along the regions corresponding to the non-apertures of both metal masks is adopted for the device using two kinds of the metal masks of mask patterns. Namely, the arrangement along the regions exclusive of the regions where the apertures thereof overlap is resulted when both metal masks are superposed. Even if the mask patterns of the metal masks of the substrate held at the substrate susceptor 3 are either of two kinds, the entire part of the non-aperture of the metal mask may be attracted via the substrate and, therefore, the metal masks may be surely brought into tight contact with the surface of the substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a liquid crystal substrate, for example,
The present invention relates to a single-wafer sputtering apparatus, a single-wafer sputtering method, and a sputtered film formed by these methods, which are used for film formation at the time of manufacturing a semiconductor substrate, an optical or magnetic recording substrate, or the like.

[0002]

2. Description of the Related Art In recent years, along with the expansion of application fields of color liquid crystal displays and the expansion of these markets, various sputter film forming apparatuses for black matrix (BM), metal electrodes, insulating films, transparent electrodes, and the like have been developed. Is being developed. The mainstream of these sputtering apparatuses is an in-line type apparatus which is excellent in productivity as the size of the substrate increases. Although this in-line system has some drawbacks, when depositing a film on a specific area of a large-sized multi-substrate, a tray is inevitably used, which makes it easy to position, remove, and transport the mask. It has the characteristic that it is.

On the other hand, a single-wafer sputtering apparatus which has been used in recent years for forming a film on a small substrate such as a semiconductor substrate or for dry etching, has a large size due to an advantage not found in some in-line apparatuses. It is used for sputtering film formation on a substrate.

In addition, since the formation of an ITO film on a color filter substrate of a TFT liquid crystal panel is sufficient in the form of a mask, a method using an in-line type device has been mainly used because of its easy handling. Also, an example using a single-wafer sputtering apparatus has come to be seen.

Conventionally, when a mask is formed by a single-wafer sputtering apparatus, a substrate supporter (susceptor) in which a magnet is embedded is provided in a sputtering chamber in a region corresponding to a non-opening portion of the metal mask, and the metal mask is temporarily fixed. In addition to holding the substrate on the substrate support, the metal mask is attracted by a magnet via the substrate, and the metal mask is brought into close contact with the substrate.

[0006]

However, this method has a problem that only one kind of film formation pattern can be processed. In other words, if the mask pattern is different from the magnet array,
The gap between the position of the non-opening of the metal mask and the buried position of the magnet occurs, and a part of the metal mask floats, and the sputtered film enters the non-opening of the metal mask and is formed. Is generated.

For this reason, when the film formation pattern differs due to a change in the size of the substrate or the like, it is necessary to prepare a new substrate support base having a new magnet arrangement corresponding to the change. In particular, in a single-wafer sputtering apparatus, in order to form substrates having different film formation patterns, usually, a plurality of sputtering chambers are allocated as dedicated sputtering chambers for each film formation pattern, and each of the film formation patterns It is necessary to provide a substrate support having a magnet arrangement corresponding to the (mask pattern).

However, if the dedicated sputtering chamber as described above is used, a sputtering chamber into which a substrate is loaded must be selected according to the film forming pattern. Therefore, the external cassette is separately managed for each film forming pattern. There is a problem that requires extra work. In addition, while a predetermined number of substrates having one type of film formation pattern are being processed, the other sputtering chambers are in a quiescent state, so that there is a problem that the tact time is reduced. In order to collectively process substrates of the same deposition pattern, the substrate support of each sputtering chamber is replaced every time the deposition pattern is changed, and tact time is gained by performing processing using all of the multiple sputtering chambers. It is also possible. However, depending on the frequency of replacement of the substrate support, the operation rate is rather lowered, and the risk of dust entering the film increases.

SUMMARY OF THE INVENTION The present invention has been made in view of such a problem in single wafer sputtering, and has been made to be able to cope with a change in a film formation pattern (mask pattern) without replacing a substrate support table. It is an object of the present invention to prevent a reduction in tact time due to a change in the time.

[0010]

According to the present invention, there is provided a transfer means for transferring a substrate, on which a metal mask is temporarily fixed, from a carry-in chamber to a carry-out chamber via a heating chamber and a sputter chamber, and a heating means provided in the sputter chamber. A substrate supporting table for holding a substrate transferred from the chamber to the sputtering chamber, and further comprising a substrate supporting table provided with a magnet for adsorbing a metal mask through the substrate. Provided is a single-wafer sputtering apparatus, wherein the support base magnets are provided in an array along a region corresponding to all of the non-opening portions of a plurality of types of metal masks having different mask patterns. is there.

Further, the present invention provides a method in which a substrate on which a metal mask is temporarily fixed is transported from a carry-in chamber to a heating chamber, heated, and then transported to a sputter chamber. In a single-wafer sputtering method in which a metal mask is attracted by a magnet provided on a table and adhered to a substrate surface to form a mask by sputtering, and then transferred to an unloading chamber, a mask pattern is formed on a substrate support table. A plurality of different types of metal masks are provided with magnets in an array along a region corresponding to all the non-opening portions, and a mask film is formed using the plurality of types of metal masks without changing the substrate support in the same sputtering chamber. And a single-wafer sputtering method.

Further, the present invention also provides a sputtered film formed by the above-mentioned single-wafer sputtering apparatus and single-wafer sputtering method.

[0013]

FIG. 1 is a schematic view showing an example of a chamber configuration of a single wafer sputtering apparatus according to the present invention. FIG. 2 is a diagram showing a state where a substrate 1 on which a metal mask 2 is temporarily fixed is held on a substrate support 3. FIG. 3 is a schematic view showing an example of the arrangement of the magnets 4 on the substrate support 3, and FIG. 4 is a schematic view showing an example of a metal mask 2 temporarily fixed to the substrate 1.

In FIG. 1, reference numerals 5a and 5b denote loading / unloading rooms,
Reference numeral 6 denotes a heating chamber provided with a hot plate (not shown) for heating the substrate 1 (see FIG. 2) on which the metal mask 2 is temporarily fixed, and reference numerals 7a to 7c denote substrate supporting tables 3 (see FIG. 2). A sputtering chamber 8 is provided for forming a mask by sputtering, and a transfer chamber 8 is provided with a transfer means (not shown) such as a transfer robot. The transfer chamber 8 and the heating chamber 6 are located between the transfer chambers 8a and 5b and the transfer chamber 8.
The gates (not shown) are separated from the sputtering chambers 7a to 7c, respectively, so that they can be independently evacuated and operated.

In FIG. 1, reference numerals 9a and 9b denote external cassettes. The external cassette 9a on the side of the loading / unloading chamber 5a accommodates a plurality of substrates 1 on which a metal mask 2 is temporarily fixed. The substrate 1 stored in the external cassette 9a is carried into the carry-in / carry-out room 5a which is opened to the outside while the space between the substrate 1 and the transfer chamber 8 is shut off. The inside of the loading / unloading chamber 5a into which the substrate 1 has been loaded is exhausted after shutting off the outside.

After the evacuation of the loading / unloading chamber 5a is completed, the transfer means transfers the substrate 1 in the loading / unloading chamber 5a to the heating chamber 6 via the transfer chamber 8, and the hot plate in the heating chamber 6 transfers the substrate 1 to the heating chamber 6. Is heated. At this time, in order to prevent the substrate 1 from being damaged due to a difference in thermal expansion between the substrate 1 and the metal mask 2, the metal mask 2 is temporarily fixed at about two points on the short side of the substrate 1. is there.

The substrate 1 heated in the heating chamber 6 is carried into one of the sputtering chambers 7a to 7c via the carrying chamber 8 by the carrying means. A substrate support 3 is provided in each of the sputtering chambers 7a to 7c, and the substrate 1 horizontally transferred to the sputter chambers 7a to 7c is held by the substrate support 3.
Thereafter, the substrate support 3 stands almost upright, and a mask is formed by side sputtering. In addition, heating by a heater is performed from below the substrate support table 1 so that the cooling of the substrate 1 can be prevented.

As shown in FIG. 3, magnets 4 are embedded in a predetermined arrangement at the substrate holding positions of the substrate support 3. The arrangement of the magnets 4 in this example is based on two types of metal masks 2 having the mask patterns shown in FIGS.
And the non-opening portions 2a of both metal masks 2
Are arranged along the region corresponding to. That is, when the two metal masks 2 are overlapped, the arrangement is along an area other than the area where the openings 2b of the two metal masks 2 overlap. Note that the detailed shape of the opening 2b of the metal mask 2 shown in FIGS. 4 and 5 is omitted, and the arrangement of the magnets 4 shown in FIG. 3 is adapted to this omitted shape.

As described above, the magnets 4 buried in the substrate support 3 are connected to the non-opening portions 2b of the metal mask 2 shown in FIG.
And the non-opening 2b of the metal mask 2 shown in FIG. Therefore, even if the mask pattern of the metal mask 2 of the substrate 1 held by the substrate support 3 is any of those shown in FIGS. Thus, it is possible to firmly adhere to the surface of the substrate 1 without causing floating. If the substrate support 3 having the magnets 4 in this arrangement is provided in all the sputtering chambers 7a to 7c, regardless of whether the substrate 1 has the metal mask 2 shown in FIG. 4 or FIG. Any of the sputtering chambers 7a-
Even with 7b, mask film formation without wraparound can be performed.

More specifically, the metal mask 2 of FIG. 4 is for performing 10.4 inch 4-chamfering from a substrate 1 of 360 × 465 mm, and the metal mask 2 of FIG. This is for performing 12.1 inch double chamfering from the substrate 1. The arrangement of the magnets 4 shown in FIG. 3 enables the two-chamfering and the four-chamfering to be performed on the same substrate support 3.

The metal mask 2 is made of a magnetic material, and is usually formed by etching a plate material of Fe-Ni alloy having a thickness of about 0.2 mm to form a mask pattern. The substrate 1 is a non-magnetic material, and usually a glass plate is used. The magnet 4 is made of a heat-resistant Sm.
-Co-based ones are preferred.

As described above, the sputtering chambers 7a to 7c
The substrate 1 on which the mask film formation has been performed by sputtering is carried by the carrying means to the carry-in / carry-out room 5a via the carrying room 8, and then taken out.

In the above example, three sputtering chambers 7
However, by providing the substrate support 3 provided with the magnets 4 having the above-described arrangement in only one sputtering chamber 7a, the tact time associated with the change in the film formation pattern can be reduced. The drop can be prevented. However, as described above, the plurality of sputtering chambers 7a, 7b,.
Support 3 provided with magnets 4 having the above arrangement
Is more effective.

In the above example, two types of metal masks 2 having different mask patterns are used. However, even if three or more types of metal masks 2 are used, the three or more types of non-opening portions 2b are formed. Similar advantages can be obtained by providing the magnets 4 in an array along the regions corresponding to all of them.

The loading / unloading chambers 5a and 5b are generally configured so that the substrate loaded from 5a returns to 5a and the substrate loaded from 5b returns to 5b. For example, the substrate from 5a is being formed. In 5b, the substrate of the previous cassette is unloaded and the substrate of the new cassette is loaded.

FIG. 6 shows another example of the arrangement of the magnets 4. The magnets are located at positions corresponding to both the non-opening portions 2b of both the metal masks 2 of 12.1 inches and 15 inches. 4 is provided.

The arrangement of the magnets 4 on the substrate support 3 can be processed in accordance with the type of the film formation pattern to be processed. The magnets 4 are inserted and arranged in these holes (depending on the film forming pattern), and unnecessary holes are filled with a blind plate of the same shape as the magnet 4 and of the same material as the substrate support 3 (for example, SUS) so that the heat is uniform. It is convenient to be able to do so.

Hereinafter, the present invention will be described with reference to Examples and Comparative Examples, but the present invention is not limited thereto.

[0029]

【Example】

Example 1 A 12.1-inch, 2-chamfered 36 having three color filters of red (R), green (G), and blue (B) and a protective layer was provided.
A substrate having a size of 0 × 465 mm and a thickness of 0.7 mm is prepared, and after cleaning, a metal mask having a shape shown in FIG. 5 is positioned and temporarily fixed to the substrate, and a single-wafer sputtering apparatus schematically shown in FIG. A mask of an ITO film was formed. However, the magnet arrangement of the substrate support in the sputtering chamber is as shown in FIG.
10.4 inches and 4 chamfers are shared.

There is no effect of the magnet on the supply of the substrate with the metal mask to the substrate support and the recovery and conveyance after the film formation, and the film breakage at the end face of the opening of the metal mask has no problem as in the conventional case. there were.

Below the opening of the metal mask for 12.1-inch two-chamfering, a magnet used for close contact with the metal mask for 10.4-inch four-chamfering is located, and the reason is unknown. The film quality such as the resistance and transmittance of the portion was the same as that of the portion where the magnets were not arranged. Also, when a mask was formed on a 10.4-inch, 4-chamfered substrate using the shared support, it was confirmed that there was no problem in transport and film quality.

Example 2 As shown in FIG.
A substrate support base having a magnet arrangement commonly used for one inch chamfering was prepared, and a substrate with a 12.1 inch double chamfered metal mask and a substrate with a 15 inch single chamfered metal mask were processed in the same manner as in Example 1.

As a result, as in the case of Example 1, it was confirmed that there was no problem in both transport and film quality.

COMPARATIVE EXAMPLE 1 A 10.4 inch 4-chamfered substrate with a metal mask shown in FIG. 4 and a magnet array substrate supporter shown in FIG. Was used to form a mask.

Since the mask pattern and the magnet arrangement do not match, a film blur occurs at the end face of the opening of the metal mask, which is a practical problem. Therefore, a new substrate support having a 10.4 inch 4-chamfered magnet array must be newly formed and replaced.

Also, a 10.4-inch 4-chamfered substrate and 15
In order to mass-produce an inch single-chamfered substrate, a mask film was formed by allocating the sputter chamber shown in FIG. 1 separately for 10.4 inches and 15 inches. However, in this method, the tact time per substrate when using the shared substrate support shown in Examples 1 and 2 was about 80 seconds, whereas the tact time for 10.4 inches and 15 inches was used. 2 each
The tact time was 120 seconds when the sputter chambers were allocated, and 200 seconds when the respective sputter chambers were allocated, and the tact time was greatly reduced.

On the other hand, when the substrate support was replaced according to the film formation pattern and the same film formation pattern was processed in three chambers, the temperature rise after the replacement of the substrate support, film formation confirmation by dummy, and the like were performed. Approximately one day was required for replacement, including the replacement rate. Further, dust was easily mixed into the film, which was not preferable.

[0038]

As described above, according to the present invention, a mask film can be formed efficiently irrespective of a film formation pattern while taking advantage of the single-wafer sputtering apparatus.
An excellent mask film can be formed in both the management aspect and the cost aspect.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing an example of a chamber configuration of a single wafer sputtering apparatus according to the present invention.

FIG. 2 is a schematic diagram showing a state where a substrate on which a metal mask is temporarily fixed is held on a substrate support.

FIG. 3 is a schematic diagram showing an example of an arrangement of magnets on a substrate support.

FIG. 4 is a schematic view showing an example of a metal mask temporarily fixed to a substrate.

FIG. 5 is a schematic view showing another example of a metal mask temporarily fixed to a substrate.

FIG. 6 is a schematic view showing another example of the arrangement of the magnets on the substrate support.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Metal mask 2a Non-opening 2b Opening 3 Substrate support 4 Magnet 5a Loading / unloading chamber 5b Loading / unloading chamber 6 Heating chamber 7a Sputtering chamber 7b Sputtering chamber 7c Sputtering chamber 8 Transferring chamber 9a External cassette 9b External cassette

Claims (6)

[Claims] 1. A transfer means for transferring a substrate, on which a metal mask is temporarily fixed, from a carry-in chamber to a carry-out chamber via a heating chamber and a sputter chamber, and is provided in the sputter chamber, and is carried from the heating chamber to the sputter chamber. In a single-wafer sputtering apparatus having a substrate supporting table for holding a substrate, and a magnet for adsorbing a metal mask through the substrate, the substrate supporting table includes a mask pattern. Are provided in an array along a region corresponding to all of the non-opening portions of a plurality of different types of metal masks. 2. The single-wafer sputtering apparatus according to claim 1, further comprising a plurality of sputtering chambers, wherein each sputtering chamber is provided with a substrate support having the same magnet arrangement. 3. A substrate on which a metal mask is temporarily fixed is transferred from a carry-in chamber to a heating chamber, heated and then transferred to a sputter chamber, where the substrate is held on the substrate support table and provided on the substrate support table. In a single wafer sputtering method in which a metal mask is attracted by a magnet and adhered to a substrate surface to form a mask by sputtering, and then transferred to an unloading chamber, a plurality of types of mask patterns having different mask patterns are provided on the substrate support. Magnets are provided in an array along the area corresponding to all the non-opening portions of the metal mask, and it is necessary to perform mask film formation using these multiple types of metal masks without changing the substrate support in the same sputtering chamber. Characteristic single-wafer sputtering method. 4. A single-wafer method according to claim 3, wherein a substrate support having the same magnet arrangement is provided in each of the plurality of sputtering chambers, and a mask film is formed by using a plurality of types of metal masks in each of the sputtering chambers. Sputtering method. 5. A sputtered film formed by the single-wafer sputtering apparatus according to claim 1 or 2 or the sputtering method according to claim 3 or 4. 6. The sputtered film according to claim 5, which is a transparent conductive film.