JPH11135577A - TAB tape for BGA - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a highly reliable TAB for BGA which can secure solder wettability, prevent peeling or curling of a solder resist when forming a solder ball, and secure insulation between wirings. Provide tape. SOLUTION: A TAB tape 27 for BGA is composed of a polyimide film 3 having an adhesive layer 8 on one side, and an adhesive layer 8.
A copper wiring pattern 1 having a predetermined wiring pattern, and a photo solder resist 7 coated on a predetermined position of the copper foil wiring pattern 1. 44
In 0 kgf / mm ^2, and has a 741kgf / mm ² 1/10 or an elastic coefficient of the polyimide film 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a BGA (Ball Grid)
The present invention relates to a TAB (Tape Automated Bonding) tape for an Array, and more particularly to a TAB tape for a BGA in which a ball pad (Ball Pad) portion is formed of a solder resist on the wiring layer side of a fine pattern having a wiring pitch of 100 μm or less.

[0002]

2. Description of the Related Art FIG. 5 shows a conventional TAB tape for BGA and a semiconductor device using the same. FIG. 5A shows a conventional TAB tape for BGA, and FIG.
1A shows a semiconductor device using a TAB tape for BGA.

The conventional TAB for BGA shown in FIG.
The tape is a 75 μm-thick polyimide film 3 having an adhesive layer 8 on one side, a copper foil wiring pattern 1 adhered to the polyimide film 3 by the adhesive layer 8 and having a predetermined wiring pattern such as an inner lead 21, For the protection and insulation between the wirings, a photo solder resist 7 is provided which covers the wiring portions other than the inner leads 21 of the copper foil wiring pattern 1. Further, the polyimide film 3 having the adhesive layer 8 has a blind via hole 4 and a device hole 23 which are formed by punching. Furthermore,
Ni / Au plating (not shown) on the inner leads 21
Is given.

[0004] The semiconductor device shown in FIG.
The solder ball 2 formed in the blind via hole 4 of the TAB tape for BGA shown in FIG. 5A and the semiconductor element 17 connected to the inner lead 21 and the inner lead bonding 16 at the position of the device hole 23 are provided. The device hole 23, the semiconductor element 17, and the inner lead 21 are sealed with a potting resin 18.

FIG. 6 shows another conventional TAB tape for BGA and a semiconductor device using the same. FIG. 6A shows a conventional TAB tape for BGA, and FIG.
1A shows a semiconductor device using a TAB tape for BGA.

The conventional BGA TAB shown in FIG.
The tape is a 75 μm-thick polyimide film 3 having an adhesive layer 8 on one side, and a predetermined fine wiring pattern having a thickness of 25 μm and a wiring pitch of 100 μm or less, which is bonded to the polyimide film 3 by the adhesive layer 8. And a photo solder resist 7 covering a predetermined wiring portion of the copper foil wiring pattern 1 for protection and insulation between the wirings. Further, the polyimide film 3 having the adhesive layer 8 has a plurality of blind via holes 4 and device holes 12 formed by punching. Further, the photo solder resist 7 is coated on a predetermined portion other than the inner leads 21 and the ball pads 22 of the copper foil wiring pattern 1 to form a ball pad portion 23. The inner lead 21 and the ball pad 22
Is subjected to Ni / Au plating (not shown).

[0007] The semiconductor device shown in FIG.
The solder ball 2 formed on the ball pad portion 23 of the TAB tape for BGA shown in FIG.
2 having a semiconductor element 17 connected to an inner lead 21 and an inner lead bonding 16,
The semiconductor element 17 and the inner lead 21 are sealed with a potting resin 18.

[0008]

However, according to the conventional TAB tape for BGA as shown in FIG. 5, the blind via hole 4 formed by punching has a problem.
Since the solder balls 2 are formed, there is a problem that the wettability of the solder is impaired by roughness such as punching burrs generated at the time of punching and roughness of the inner wall surface of the blind via hole 4 and productivity is deteriorated.

A conventional TAB for BGA shown in FIG.
According to the tape, when the solder ball 2 is formed, the solder resist 7 around the ball pad 22 is peeled off or turned up, so that the insulation between the wirings cannot be secured, and the product yield is deteriorated. There was a problem that it became high.

Accordingly, an object of the present invention is to provide a highly reliable BGA which can ensure the wettability of solder, prevent the peeling or curling of a solder resist when forming solder balls, and ensure the insulation between wirings. To provide a TAB tape for use.

[0011]

SUMMARY OF THE INVENTION In order to achieve the above-mentioned object, the present invention provides a film material, a metal wiring layer adhered to one side of the film material with an adhesive and having a predetermined wiring pattern, A TAB tape for BGA, comprising: a solder resist coated on a predetermined position of a wiring layer, wherein the solder resist has an elastic modulus of 1/10 or more of an elastic modulus of a film material.
Provide TAB tape for use.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a TAB tape for BGA of the present invention and a semiconductor device using the same will be described in detail with reference to manufacturing steps.

FIG. 1 shows a TAB tape for BGA of the present invention.
1 and a manufacturing process of a semiconductor device using the same. First,
Adhesive layer 8 having a glass transition temperature of 190 ° C. and a thickness of 13 μm
With the initial elastic modulus of 741 kgf / mm^TwoWith thickness of 75μm
On one side of polyimide film (UPILEX S) 3
Apply (101). Next, a polyimide having an adhesive layer 8
A film 3 has a device hole 12 for mounting a semiconductor element.
And the polyimide film 3 on a manufacturing apparatus (not shown).
A sprocket hole (not shown) for moving
Punched out with a punch, etc., and on the outer lead side
64 through-holes 5 having a diameter of 80 μm are formed (10
2). Adhesive for this punched polyimide film 3
On the layer 8 side, a copper foil 1a having a thickness of 18 μm is laminated and cured.
And cover one side of the through hole 5 with this copper foil 1a.
To form a blind via hole 4 (103). Next, copper
The foil 1a is subjected to a photo application process, and 152
Predetermined wiring having Anna lead 21 and ball pad 22
A copper foil wiring pattern 1 of the pattern is created (104). this
A predetermined portion of the copper foil wiring pattern 1 other than the inner lead 21
In minutes, the glass transition temperature is 123.7 ° C and the initial elastic modulus.
440kgf / mm ^Two25μm thick photo soldering
Gist 7 is applied, and the ball solder of photo solder resist 7 is applied.
Expose, develop, and bake the portion corresponding to the pad 22
To form an opening (ball pad) 25 having a diameter of 200 μm.
Open to expose the ball pad 22. Then, the inari
Card 21, ball pad 22, and photo solder resist
In the area 26 of the outer lead where the
1.0 μm Ni plating (not shown).
Au plating (not shown) with a thickness of 0.5 μm
Then, the BGA TAB tape 27 is created (105).

Next, the semiconductor element 17 is mounted in the device hole 12 of the TAB tape 27 for BGA, and is connected to the inner lead 21 by the inner lead bonding 16 (106). Further, the semiconductor element 17 and the inner lead 21 are sealed with a potting resin 18 so that the ball pad 22
Then, the semiconductor device 28 is manufactured by forming the solder balls 2 (107).

The BG of the present invention manufactured as described above
The semiconductor device 28 using the TAB tape 27 for A was subjected to a temperature cycle test in which the temperature was maintained at −55 ° C. for 30 minutes and the temperature was maintained at 125 ° C. for 30 minutes as one cycle. , 500, 1000
It was measured every cycle. As a result, the TAB tape 27 for BGA and the semiconductor device 28 having high reliability against thermal stress were obtained without increasing the resistance or falling off the solder balls 2. The semiconductor device 28 was subjected to a migration test at a temperature of 85 ° C. and a humidity of 85% with a DC bias of 50 V for 1000 hours. As a result, the conduction breakdown of the conduction portion and the insulation breakdown of the photo solder resist 7 do not occur.
The highly reliable TAB tape 27 for BGA and the semiconductor device 28 were obtained. Further, in the semiconductor device 28,
A pressure cooker test was conducted at a temperature of 127 ° C. and a humidity of 100% for 200 hours. As a result, the photo solder resist 7 was not deteriorated, cracked, peeled off or turned up, and a highly reliable TAB tape 27 for BGA and a semiconductor device 28 were obtained.

FIG. 2 shows a process of manufacturing another TAB tape for BGA of the present invention and a semiconductor device using the same. First, the initial elastic modulus is 470 kgf / mm ² and the thickness is 50 μm.
35 μm thick copper foil 6 on one side of polyimide film 3
To form a polyimide film 14 of CCL (Copper Clad Laminate). An adhesive layer 8 having a glass transition temperature of 190 ° C. and a thickness of 13 μm is applied to the surface opposite to the copper foil 6 (201). Next, the CCL polyimide film 14
A device hole 12 for mounting a semiconductor element, and a CCL
A sprocket hole (not shown) for moving the polyimide film 14 on a manufacturing apparatus (not shown) is formed by punching with a punch or the like.
Four through holes 5 having a diameter of 80 μm are formed (20
2). On the adhesive layer 8 side of the CCL polyimide film 14, a copper foil 1a having a thickness of 18 μm is coated and cured,
A blind via hole 4 is formed by closing one side of the through hole 5 with this copper foil 1a (203). Next, the copper foil 1a is subjected to photo application processing to form a copper wiring pattern 1 having a predetermined wiring pattern having 152 inner leads 21 and ball pads 22 (204). A glass transition temperature of 35 ° C. and an initial elastic modulus of 50 kgf are applied to the surface of the copper foil 6.
/ Mm ² and a 15 μm-thick polyimide-based solder resist (not shown). Further, a glass transition temperature of 1 is applied to a predetermined portion of the copper foil wiring pattern 1 other than the inner leads 21.
A photo solder resist 7 having a thickness of 25 μm is applied at 23.7 ° C. and an initial elastic modulus of 440 kgf / mm ² , and a portion of the photo solder resist 7 corresponding to the ball pad 22 is exposed, developed, and baked to obtain a diameter of A hole 25 of 200 μm is opened to expose the ball pad 22. Thereafter, Ni plating (not shown) having a thickness of 1.0 μm is applied to the inner lead 21, the ball pad 22, and the region 26 of the outer lead on which the photo solder resist 7 is not applied. By applying 0.5 μm Au plating (not shown), a TAB tape 31 for BGA having two-layer wiring is prepared (205).

Next, the semiconductor element 17 is mounted in the device hole 12 of the TAB tape 31 for BGA, and is connected to the inner lead 21 by the inner lead bonding 16 (206). Further, the semiconductor element 17 and the inner lead 21 are sealed with a potting resin 18 so that the ball pad 22
Then, the semiconductor device 32 is manufactured by forming the solder ball 2 (207).

The BG of the present invention manufactured as described above
The semiconductor device 32 using the TAB tape 31 for A was subjected to 1000 temperature cycle tests in which the temperature was held at −55 ° C. for 30 minutes and the temperature was held at 125 ° C. for 30 minutes as one cycle, and the change in conduction resistance was 200 times. , 500, 1000
It was measured every cycle. As a result, a TAB tape 31 for BGA and a semiconductor device 32 having high reliability against thermal stress were obtained without increasing the resistance or falling off the solder balls 2. The semiconductor device 32 was subjected to a migration test at a temperature of 85 ° C. and a humidity of 85% with a DC bias of 50 V for 1000 hours. As a result, there is no conduction breakdown of the conduction portion and no dielectric breakdown of the two-layer wirings 1 and 6 and the photo solder resist 7, and the highly reliable TAB tape for BGA 3
1 and the semiconductor device 32 were obtained. Further, the semiconductor device 32 is heated at a temperature of 127 ° C. and a humidity of 100% for 2 hours.
A 00 hour presser cooker test was performed. As a result,
Highly reliable TAB tape for BGA 31 that does not cause deterioration, cracking, peeling, or curling of the photo solder resist 7
And a semiconductor device 32 were obtained.

FIG. 3 shows a process of manufacturing another TAB tape for BGA and a semiconductor device using the same according to the present invention. First, the initial elastic modulus is 470 kgf / mm ² and the thickness is 50 μm.
35 μm thick copper foil 6 on both sides of polyimide film 3
To form a polyimide film 15 of CCL (Copper Clad Laminate).
Is coated with an adhesive layer 8 having a glass transition temperature of 190 ° C. and a thickness of 13 μm (301). Next, in the CCL polyimide film 15, a device hole 12 for mounting a semiconductor element and a sprocket hole (not shown) for moving the polyimide film 3 on a manufacturing apparatus are formed by punching with a punch or the like. 64 through-holes 5 having a diameter of 80 μm are formed on the outer lead side (302). On the adhesive layer 8 side of this polyimide film 3, a thickness of 18 μm
m copper foil 1a is covered and cured, and one side of the through hole 5 is covered with the copper foil 1a to form a blind via hole 4.
Is formed, and the inner surface of the blind via hole 4 is subjected to desmear treatment and conduction treatment, and then the thickness 1 is applied to the surface opposite to the copper foil 1a.
A copper plating 9 of 0 μm is applied (303). Next, the copper foil 1a is subjected to a photo application process to form a copper foil wiring pattern 1 having a predetermined wiring pattern having 152 inner leads 21 and ball pads 22 (304). A glass transition temperature of 123.7 ° C. and an initial elastic modulus of 440 k
Photo solder resist 7 of gf / mm ² and thickness of 25 μm
Is applied, and the ball pad 22 of the photo solder resist 7 is applied.
Is exposed, developed, and baked to form an opening 25 having a diameter of 200 μm, thereby exposing the ball pad 22. Then, the inner lead 21 and the ball pad 22
Is subjected to Ni plating (not shown) having a thickness of 1.0 μm,
Furthermore, Au plating (not shown) having a thickness of 0.5 μm is applied thereon to form a three-layer wiring TAB tape 33 for BGA (305).

Next, the semiconductor element 17 is mounted in the device hole 12 of the TAB tape 33 for BGA, and is connected to the inner lead 21 by the inner lead bonding 16 (306). Further, the semiconductor element 17 and the inner lead 21 are sealed with a potting resin 18 so that the ball pad 22
The semiconductor device 34 is manufactured by forming the solder ball 2 on the substrate (307).

The BG of the present invention produced as described above
The semiconductor device 34 using the TAB tape 33 for A was subjected to a temperature cycle test in which the temperature was maintained at −55 ° C. for 30 minutes and the temperature was maintained at 125 ° C. for 30 minutes as one cycle. , 500, 1000
It was measured every cycle. As a result, the BGA TAB tape 33 and the semiconductor device 34 having high reliability against thermal stress were obtained without increasing the resistance, falling off the solder balls 2 and peeling off the copper plating 9 in the blind via holes 4. In addition, the semiconductor device 34 was subjected to a migration test at a temperature of 85 ° C. and a humidity of 85% and a DC bias of 50 V for 1000 hours. As a result, the conduction breakdown of the conduction portion and the dielectric breakdown of the three-layer wirings 1 and 6 and the photo solder resist 7 did not occur, and the highly reliable TAB tape 33 for BGA and the semiconductor device 34 could be obtained. Further, the semiconductor device 32 was subjected to a pressure cooker test at a temperature of 127 ° C. and a humidity of 100% for 200 hours. As a result, the photo solder resist 7 was not deteriorated, cracked, peeled off, turned up, etc., and the highly reliable TAB tape 33 for BGA and the semiconductor device 34 could be obtained.

FIG. 4 shows another TAB table for BGA of the present invention.
1 shows a manufacturing process of a semiconductor device using the same. Destination
470 kgf / mm initial elastic modulus^TwoWith thickness of 50μm
35 μm thick copper foil 6 on one side of polyimide film 3
Coated CCL (Copper Clad Laminate) polyimide
A film 14 is formed on the surface opposite to the copper foil 1a.
An adhesive layer 8 having a transition temperature of 190 ° C. and a thickness of 13 μm is applied.
Cloth (401). Next, this CCL polyimide film 1
4 shows a device hole 12 for mounting a semiconductor element,
The L polyimide film 14 was moved on the manufacturing equipment.
A sprocket hole (not shown) with a punch
Punched out, and 64 diameters on the outer lead side
A through hole 5 of 80 μm is formed (402). This CC
On the adhesive layer 8 side of the L polyimide film 14, a thickness 18
μm copper foil 1a is coated and cured.
Blind via hole by blocking one side of through hole 5
4 is formed (403). Next, the copper foil 1a is
Treatment, 152 inner leads 21 and balls
Copper wiring pattern having a predetermined wiring pattern
Turn 1 is created and the copper foil wiring pattern 1
A glass transition temperature of 297 ° C.
And initial modulus of elasticity 550kgf / mm^TwoWith thickness 25μ
m of a polyimide solder resist 19 (40
Four). Next, the ball solder of the polyimide solder resist 19 is used.
Galvano CO in the part corresponding to the pad 22 _TwoWith laser 20
An opening 25 having a diameter of 200 μm is opened, and the ball pad 22 is opened.
To expose. Then, the inner lead 21 and the ball
22 and polyimide solder resist 19 are applied.
In the area 26 of the outer lead which is not
Ni plating (not shown) is applied, and the thickness is further
0.5 μm Au plating (not shown)
Create a TAB tape 35 for BGA with lines (40
Five).

Next, the semiconductor element 17 is mounted in the device hole 12 of the TAB tape 35 for BGA, and is connected to the inner lead 21 by the inner lead bonding 16 (406). Further, the semiconductor element 17 and the inner lead 21 are sealed with a potting resin 18 so that the ball pad 22
Then, the semiconductor device 36 is manufactured by forming the solder balls 2 (407).

The BG of the present invention produced as described above
The semiconductor device 36 using the TAB tape 35 for A was subjected to 1000 cycles of a temperature cycle test in which the temperature was maintained at −55 ° C. for 30 minutes and the temperature was maintained at 125 ° C. for 30 minutes as one cycle, and the change in conduction resistance was 200 times. , 500, 1000
It was measured every cycle. As a result, it was possible to obtain the BGA TAB tape 35 and the semiconductor device 36 having high reliability against thermal stress without increasing the resistance or falling off the solder balls 2. The semiconductor device 36 was subjected to a migration test at a temperature of 85 ° C. and a humidity of 85% with a DC bias of 50 V for 1000 hours. As a result, no conductive breakdown of the conductive portion and no dielectric breakdown of the two-layer wirings 1 and 6 and the polyimide solder resist 19 occur, and a highly reliable TAB for BGA is used.
The tape 35 and the semiconductor device 36 were obtained.
Further, a temperature of 127 ° C. and a humidity of 10
A 200 hour presser cooker test was performed at 0%. As a result, the quality of the polyimide solder resist 19 was not altered, cracked, peeled off or turned up, and the TAB tape 35 for BGA and the semiconductor device 36 having high reliability could be obtained.

As described above, the one-layer wiring BGA TAB tape 27, the two-layer wiring BGA TAB tape 3
1, 35, 3-layer wiring such as TAB tape 33 for BGA, insulation resistance of 10 ⁹ Ω at a temperature of 85 ° C. and a humidity of 85% for 1000 hours, a highly reliable wiring pitch of 100 μm or less. TA for BGA with fine wiring
B tape was obtained.

While several embodiments of the TAB tape for BGA of the present invention have been described above, the conditions of each component may be as follows.

The thickness of the copper foil 1a forming the copper foil wiring pattern 1 is preferably 2 μm to 35 μm. When the pitch between the wirings is up to 80 μm, photoresist pattern etching is possible up to a thickness of the copper foil 1 a of 35 μm. When the pitch between the wirings is 80 μm or less, the thickness of the copper foil 1 a becomes 3 μm.
If the thickness is not more than 5 μm, the photoresist pattern cannot be etched.

The thickness of the polyimide film 3 is 5
0 μm to 150 μm is desirable. This is because a thickness of 50 μm or more is required to ensure the flatness of the tape, and is preferably 150 μm or less in consideration of mass productivity. In particular, the thickness of the polyimide film 3 seems to be optimally 75 μm.

The inner diameter of the opening 25 of the solder resist portion 7 of the ball pad 22 is preferably 50 μm to 500 μm. This is because a wiring having a size of 50 μm or more is necessary in order to ensure the connection of the wiring, and if the inner diameter is 500 μm or more, it is difficult to make a fine wiring with a wiring pitch of 100 μm or less.

The thickness of the adhesive layer 8 is preferably 7 μm to 50 μm. In a TAB tape for BGA without a device hole, a semiconductor element may be wire-bonded.
For high-speed connection, a thin adhesive having a high elastic modulus at high temperature is required, and the thickness of the adhesive layer 8 is 7 μm.
Is desirable. In the case where a device hole is provided, the adhesive layer 8 needs to be
This is because the thickness may be increased to about μm.

The elastic coefficient of the polyimide solder resist 19 or the photo solder resist 7 is at least 1/10 of the elastic coefficient of the polyimide film 3. Temperature 245
As a result of conducting the solder dip test three times at 10 ° C. ± 5 ° C. for 10 seconds, if the above elastic modulus is concerned, the solder resist around the solder ball does not peel or turn up, and the insulation between the wirings is secured. As a result, a highly reliable TAB tape for BGA was obtained. In addition, a temperature of 127 ° C. and a humidity of 1
Even in a 200% pressurized cooker test at 200%, peeling or curling of the solder resist around the solder ball did not occur if the above-mentioned elastic modulus was related. This is presumed to be due to the fact that the difference in bending and strain is suppressed and the stress balance can be achieved by a combination of elastic coefficients close to each other.

Sn / solder plating may be used instead of Ni / Au plating. This is because plating may be performed in accordance with the method of forming the solder balls.

The glass transition temperature of the adhesive layer 8 is 150 ° C. or higher, and the glass transition temperature of the polyimide solder resist 19 or the photo solder resist 7 is 120 ° C. or higher. Desirably. As a result of performing the solder dip test three times at a temperature of 245 ° C. ± 5 ° C. for 10 seconds, if the solder transition temperature is equal to or higher than the above-mentioned glass transition temperature, the solder resist around the solder ball does not peel or turn up, and the insulation between the wirings does not occur. Thus, a highly reliable TAB tape for BGA could be obtained. This is because a high glass transition temperature generally results in excellent heat resistance.

[0034]

As described above, the TA for BGA of the present invention is used.
According to the B tape, the modulus of elasticity of the solder resist is set at 1/10 or more of the modulus of elasticity of the polyimide film, so that the solder wettability is ensured and the peeling and turning of the solder resist at the time of forming the solder ball are prevented. Thus, it has become possible to secure insulation between wirings and obtain high reliability. Further, since the elastic modulus of the solder resist and that of the polyimide film are made close to each other, no bending or distortion occurs, and the flatness of the TAB tape for BGA can be secured.

Further, since the reliability of the TAB tape for BGA is improved, the yield is improved, the cost is reduced, and the TA for BGA with a two-layer wiring or a three-layer wiring having a ground layer is inexpensively manufactured.
B tape can now be supplied.

[Brief description of the drawings]

FIG. 1 is a schematic view showing one embodiment of a TAB tape for BGA and a semiconductor device using the same according to the present invention.

FIG. 2 is a schematic diagram showing one embodiment of a TAB tape for BGA and a semiconductor device using the same according to the present invention.

FIG. 3 is a schematic view showing an embodiment of a TAB tape for BGA and a semiconductor device using the same according to the present invention.

FIG. 4 is a schematic view showing one embodiment of a TAB tape for BGA and a semiconductor device using the same according to the present invention.

FIG. 5 is a schematic view showing one embodiment of a conventional TAB tape for BGA and a semiconductor device using the same.

FIG. 6 is a schematic diagram showing one embodiment of a conventional BGA TAB tape and a semiconductor device using the same.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Copper foil wiring pattern 1a, 6 Copper foil 2 Solder ball 3 Polyimide film 4 Blind via hole 5 Through hole 7 Photo solder resist 8 Adhesive layer 9 Copper plating 12 Device hole 14, 15 CCL polyimide film 16 Inner lead bonding 17 Semiconductor element 18 Potting resin 19 Polyimide solder resist 20 Galvano CO ₂ laser 21 Inner lead 22 Ball pad 25 Opening 26 Outer lead area 27, 31, 33, 35 TAB tape for BGA 28, 32, 34, 36 Semiconductor device

Claims (5)

[Claims] 1. A BGA comprising: a film material; a metal wiring layer adhered to one surface of the film material with an adhesive, having a predetermined wiring pattern; and a solder resist coated on a predetermined position of the metal wiring layer. (Ball Grid Array) For TAB (Tape Automated Bonding) tape, the elastic modulus of the solder resist is 1/10 or more of the elastic coefficient of the film material.
TAB tape for GA. 2. The adhesive has a glass transition temperature of 15
0 ° C. or higher, the solder resist has a glass transition temperature of 120 ° C.
The T for BGA according to claim 1, characterized in that:
AB tape. 3. The method according to claim 1, wherein the metal wiring layer has a Ni / A
3. The TAB tape for BGA according to claim 1, wherein the TAB tape is provided with u plating. 4. The TAB tape for BGA according to claim 1, wherein said metal wiring layer has a predetermined portion plated with Sn / solder. 5. The film material according to claim 1, wherein a metal layer serving as a signal layer is provided on one or both surfaces thereof.
5. The TAB tape for BGA according to any one of items 4 to 4.