JPH11135526A - Manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method which can prevent warp in a substrate for mounting a semiconductor, crack of semiconductor device or outbreak of micro-cracking, in manufacturing a semiconductor device installed with the semiconductor element having an electrode for connecting in its center part and capable of high integrality. SOLUTION: A recessed part 11 having an open outlet in its back side for a semiconductor mounting substrate 1 on which the surface circuit is formed, and a through hall 12 which goes through the board 1 in the center part, are formed in a semiconductor mounting substrate 1. A semiconductor device 2 having a connecting electrode 21 in the center part of the first main surface in the center of a first main surface of the board 1, inside the recessed part 11 of the board 1 on the surface of which a main circuit is formed is packaged. After installing the semiconductor in the recessed part 11, when the resin is sealed by injecting the sealing compound from the resin injection passage A2 on the mold A by putting the semiconductor mounting substrate 1 between the molds A and B, the supporting part 5 which supports a second main surface of the semiconductor device 2 is provided so that no gap between the semiconductor device 2 and the mold B exists.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device in which a semiconductor element having a connection electrode at the center of one main surface is mounted on a semiconductor mounting substrate and sealed with a resin. Things.

[0002]

2. Description of the Related Art Conventionally, various types of packages have been widely used as semiconductor devices in which a semiconductor element such as an IC chip is mounted on a substrate and sealed with a resin. As a conventional semiconductor device, a device in which a semiconductor element having a connection electrode for bonding near a peripheral edge of a surface is mounted is mainly used. On the other hand, some semiconductor elements have a connection electrode at the center of the surface. As a semiconductor device used when mounting this type of semiconductor element, TAB (Tape Automated Bonn) is used.
ding), SON (Small Outline N)
onled-Package), LCC (lea
There is a package such as a dress chip carrier.

[0003]

In recent years, with the increase in the density of electronic components mounted on a motherboard,
Demand for high integration of semiconductors is increasing.

In order to meet such demands, the applicant of the present application has paid attention to an LCC which is relatively easy to handle the semiconductor device itself and has high mounting reliability.
Japanese Patent Application No. Hei 9-157189, filed on Jan. 10, proposes a semiconductor device (LCC) that can be highly integrated.
Among them, there has been proposed a semiconductor device which can be highly integrated and in which a semiconductor element having a connection electrode at the center of the surface is mounted. About this semiconductor device,
This will be described with reference to FIGS.

In the semiconductor device, a front surface circuit 14 extending from an edge of the front surface to a central portion is formed on the front surface of an insulating substrate 10 having opposite front and back surfaces. A back surface circuit 1 is formed, an end surface electrode 13 connecting the front surface circuit 14 and the back surface circuit 15 is formed on a side end surface of the substrate, and a concave portion 11 for mounting the semiconductor element 2 is formed in a central portion of the back surface. A semiconductor mounting substrate 1 is used in which a through hole 12 having a smaller opening area than the opening of the concave portion 11 is formed at the center of the bottom surface of the concave portion 11 and penetrates on both sides thereof. The recess 11 of the semiconductor mounting substrate 1 has an outer dimension smaller than the opening of the recess 11 and larger than the opening of the through hole 12, and has a thickness smaller than the depth of the recess 11. A semiconductor element 2 having a connection electrode 21 is mounted at the center of one main surface. The semiconductor element 2 has one surface fixed to the bottom of the recess 11 with an adhesive 30 so that the center of the semiconductor element 2 and the opening of the through hole 12 coincide with each other. 21 and semiconductor mounting substrate 1
Is connected to the surface electrode 14 by a bonding wire 8. In order to seal the bonding wire 8, the inside of the through hole 12 and the peripheral portion of the opening on the front surface thereof are resin-sealed with a sealing material 6. Then, the semiconductor device is placed at a predetermined position on the motherboard C, and the end face electrode 1
3 is mounted on the motherboard C by matching with the electrodes provided on the motherboard C and joining with solder 91. Further, as shown in FIG. 8, another semiconductor device can be placed and stacked on the semiconductor device mounted on the motherboard C. In this case, a conductive adhesive 92 or the like can be used. By joining the back electrode 15 of the upper semiconductor device and the front electrode 14 of the lower semiconductor device, the upper and lower conductive properties can be secured, and the sealing material 6 cured in the lower semiconductor device can be removed from the surface of the substrate. The raised portion also fits in the space below the semiconductor element 2 in the concave portion 11 of the upper semiconductor device, so that high integration is possible.

In the above-described semiconductor device, a semiconductor mounting substrate 1 on which a semiconductor element 2 is mounted according to a conventional method.
In general, resin sealing is performed by a method as shown in FIG. That is, first, the semiconductor mounting substrate 1 on which the semiconductor element 2 is mounted is sandwiched between the first and second molds A and B, and provided on the first mold A corresponding to the front surface side of the semiconductor mounting substrate 1. The resin sealing is performed by injecting the sealing material 6 into the through hole 12 of the semiconductor mounting substrate 1 from the resin injection path A2 thus obtained. However, in this case, the periphery of the recess 11 on the back side of the semiconductor mounting substrate 1 is supported by the second mold B.
There is a gap between the second mold B and the second mold B. Therefore, the injection pressure at the time of injecting the sealing material 6 from the resin injection path A2 becomes a stress that pushes down the semiconductor element 2 and the thin portion 16 thinned due to the concave portion 11 in the center of the semiconductor element 2, and this stress is generated. As a result, there is a possibility that problems such as warpage of the semiconductor mounting substrate 1 or cracks and microcracks of the semiconductor element 2 may occur.

In order to solve such a problem, the present invention is directed to manufacturing a semiconductor device capable of high integration in which a semiconductor element having a connection electrode in the center is mounted as described above. An object of the present invention is to provide a manufacturing method capable of preventing the occurrence of warpage of a substrate for use, cracking of a semiconductor element, and microcracks.

[0008]

In order to achieve the above object, the present invention provides an insulating substrate having opposed front and back surfaces, wherein at least the surface is provided with a surface circuit extending from the edge of the surface to the center. A recess for mounting a semiconductor element is formed in the center of the back surface, and a through hole having a smaller opening area than the opening of the recess is formed at the center of the bottom of the recess on both sides of the front and back. A semiconductor mounting substrate, having an outer dimension smaller than the opening of the concave portion and larger than the opening of the through hole, and having a thickness smaller than the depth of the concave portion. A semiconductor element provided with a connection electrode at the center of the first main surface of the first and second main surfaces, and the semiconductor element is provided in a concave portion of the semiconductor mounting substrate. The center and the opening of the through hole The first main surface is mounted by fixing the first main surface to the bottom surface of the concave portion, and the connection electrode of the semiconductor element and the surface electrode of the semiconductor mounting substrate are connected through the through hole. As a method of manufacturing a semiconductor device in which a connection portion between a connection electrode of the semiconductor element connected through a hole and a surface electrode of the semiconductor mounting substrate is resin-sealed, the following manufacturing method is provided. .

In the manufacturing method according to a first aspect of the present invention, the semiconductor element is placed in the recess of the semiconductor mounting substrate.
The semiconductor device is mounted by fixing the first main surface to the bottom surface of the recess by aligning the center portion of the semiconductor element with the opening of the through hole, and connecting the connection electrode of the semiconductor element and the electrode through the through hole. A semiconductor mounting step of connecting the surface electrode of the semiconductor mounting substrate, and sealing for resin-sealing a connection portion between the connection electrode of the semiconductor element connected through the through hole and the surface electrode of the semiconductor mounting substrate. Process and
In the method for manufacturing a semiconductor device, the semiconductor mounting substrate on which the semiconductor element is mounted is, in the sealing step, first and second substrates corresponding to the front and back surfaces of the semiconductor mounting substrate, respectively. In a state where the second main surface of the semiconductor element is supported from the back side of the semiconductor mounting substrate, a sealing material is inserted through a resin injection path provided in the first mold. Resin sealing is performed by injecting at least into the through hole of the semiconductor mounting substrate.

The connecting portion between the connection electrode of the semiconductor element and the front surface electrode of the semiconductor mounting substrate has a wiring connecting the connection electrode of the semiconductor element and the front surface electrode of the semiconductor mounting substrate. And so on.

[0011] In the manufacturing method according to the first aspect, in a state where the second main surface of the semiconductor element is supported from the back side of the semiconductor mounting substrate, the resin injection provided in the first mold is provided. Since the sealing material is injected at least into the through-hole of the semiconductor mounting substrate from the path, the semiconductor element is prevented from being pushed down by the injection pressure of the sealing material. Therefore, it is possible to prevent the warpage of the semiconductor mounting substrate, the generation of cracks and microcracks in the semiconductor element.

In this case, as a method of supporting the second main surface of the semiconductor element from the back side of the semiconductor mounting substrate, the semiconductor element mounted on the semiconductor mounting substrate and the second mold are supported. Or a method of providing a spacer between them and filling the gap, or a method of providing a convex portion in contact with the second main surface of the semiconductor element mounted on the semiconductor mounting substrate on the second mold. No.

In the first aspect, in the semiconductor mounting step, the bottom surface of the concave portion of the semiconductor mounting substrate and the first main surface of the semiconductor element are partially bonded to form a gap between them. It is preferable that the semiconductor element is mounted in the recess in the state where the semiconductor element is present. In this case, the sealing material injected into the through hole flows from the gap between the bottom surface of the recess and the semiconductor element to the gap between the side wall of the recess and the side end face of the semiconductor element, and fills the gap. Therefore, the first main surface and side end surfaces of the semiconductor element can be sealed.

Further, in this case, after the semiconductor mounting step, the gap between the bottom surface of the concave portion of the semiconductor mounting substrate and the first main surface of the semiconductor element and the outer periphery of the semiconductor element are formed using a liquid sealing material. After filling and curing the gap between the end face and the side wall of the concave portion, the resin sealing operation described above may be performed as the sealing step. Here, the liquid sealing material is a sealing material having fluidity at normal temperature. In this case, the liquid sealing material is fed into the gap between the bottom surface of the concave portion and the first main surface of the semiconductor element and the gap between the outer peripheral end surface of the semiconductor element and the side wall of the concave portion by capillary action.

In the manufacturing method according to a second aspect of the present invention, the semiconductor element is placed in the recess of the semiconductor mounting substrate.
The semiconductor device is mounted by fixing the first main surface to the bottom surface of the recess by aligning the center portion of the semiconductor element with the opening of the through hole, and connecting the connection electrode of the semiconductor element and the electrode through the through hole. A semiconductor mounting step of connecting the surface electrode of the semiconductor mounting substrate, and sealing for resin-sealing a connection portion between the connection electrode of the semiconductor element connected through the through hole and the surface electrode of the semiconductor mounting substrate. Process and
In the method for manufacturing a semiconductor device, the step of mounting the semiconductor includes partially bonding the bottom surface of the concave portion of the semiconductor mounting substrate and the first main surface of the semiconductor element to form a gap between them. In the presence state, the semiconductor element is mounted in the concave part, and in the sealing step, a liquid sealing material is used between the concave bottom surface of the semiconductor mounting substrate and the first main surface of the semiconductor element. The gap, and the gap between the outer peripheral end face of the semiconductor element and the concave side wall is filled, and after performing a first sealing step of curing, the semiconductor mounting board on which the semiconductor element is mounted is A sealing material is interposed between first and second molds respectively corresponding to the front surface and the back surface of the semiconductor mounting substrate, and at least the sealing material is inserted through a resin injection path provided in the first mold. The above penetration of the substrate In which resin sealing is performed by performing a second sealing step of injecting within.

[0016] In the manufacturing method according to the second aspect, the semiconductor mounting board on which the semiconductor element is mounted in the semiconductor mounting step includes:
The gap between the bottom surface of the recess of the semiconductor mounting substrate and the first main surface of the semiconductor element, and the gap between the outer peripheral end face of the semiconductor element and the sidewall of the recess are filled with the liquid sealing material. By curing the liquid sealing material, the first main surface and side end surfaces of the semiconductor element are sealed. At this time, at the same time, the central portion of the semiconductor mounting substrate and the semiconductor element are integrated with the cured liquid sealing material to increase the thickness, so that the strength of this portion is improved. Therefore, in the subsequent second encapsulation step, even if a support portion for supporting the semiconductor element is not provided as in the case of the above-described first aspect, the central portion of the integrated semiconductor mounting substrate can be formed. The semiconductor element can withstand the pressure sufficiently if the injection pressure of the sealing material from the resin injection path of the first mold is slightly increased or decreased. Therefore, it is possible to prevent the warpage of the semiconductor mounting substrate, the occurrence of cracks in the semiconductor element, and the occurrence of microcracks.

According to a third aspect of the present invention, in the manufacturing method, the semiconductor element is placed in the recess of the semiconductor mounting substrate.
The semiconductor device is mounted by fixing the first main surface to the bottom surface of the recess by aligning the center portion of the semiconductor element with the opening of the through hole, and connecting the connection electrode of the semiconductor element and the electrode through the through hole. A semiconductor mounting step of connecting the surface electrode of the semiconductor mounting substrate, and sealing for resin-sealing a connection portion between the connection electrode of the semiconductor element connected through the through hole and the surface electrode of the semiconductor mounting substrate. Process and
In the method of manufacturing a semiconductor device, the semiconductor mounting substrate includes a frame body having a center hole with a frame hole opened on the front and back, on a surface peripheral portion thereof, and in the semiconductor mounting step, By partially bonding the bottom surface of the recess of the semiconductor mounting substrate and the first main surface of the semiconductor element, the semiconductor element is mounted in the recess with a gap between them, and the sealing is performed. The stopping step uses a first liquid sealing material to form a gap between the bottom surface of the concave portion of the semiconductor mounting substrate and the first main surface of the semiconductor element, and the outer peripheral end surface of the semiconductor element and the concave side wall. Filling the gap between, the first sealing step to cure, and after this first sealing step, pour a second liquid sealing material into the frame hole of the frame,
The method includes a second sealing step of resin-sealing a connection portion between the connection electrode of the semiconductor element and the surface electrode of the semiconductor mounting substrate by curing.

[0018] In the manufacturing method according to the third aspect, the semiconductor mounting board on which the semiconductor element is mounted in the semiconductor mounting step includes:
The gap between the bottom surface of the recess of the semiconductor mounting substrate and the first main surface of the semiconductor element, and the gap between the outer peripheral end face of the semiconductor element and the sidewall of the recess using the first liquid sealing material. By filling and curing, the first main surface and side end surfaces of the semiconductor element are sealed. Thereafter, in the second sealing step, a second liquid sealing material is poured into the frame hole of the frame body and cured, so that the connection electrode of the semiconductor element and the surface electrode of the semiconductor mounting substrate are formed. Is sealed with resin. As described above, since the injection pressure for filling the sealing material is not required at the time of resin sealing, the semiconductor mounting substrate and the semiconductor element are not distorted. The occurrence of cracks and microcracks in the element can be prevented.

[0019]

Embodiments of the present invention will be described below.

FIGS. 1A to 1F are sectional views showing steps of a method for manufacturing a semiconductor device according to the first embodiment of the present invention. The first embodiment will be described sequentially in the order of steps.

First, a semiconductor mounting substrate 1 as shown in FIG. 1A is prepared. In the substrate 1 for mounting a semiconductor, in an insulating substrate 10 having front and back surfaces opposed to each other, a front surface circuit 14 extending from an edge of the front surface to a center portion is formed on the front surface, and the front surface circuit 14 corresponds to an edge of the back surface. Backside circuit 1
Is formed, and the front surface circuit 14 and the back surface circuit 1 are formed on the side end surface of the substrate.
5, a concave portion 11 for mounting a semiconductor element 2 to be described later is formed in the center of the back surface, and the concave portion 11 penetrates the front and back sides at the center of the bottom surface of the concave portion 11. Through hole 1 having an opening area smaller than that of the opening
2 is formed. Then, before the next semiconductor mounting step, an adhesive 3 for fixing a semiconductor element 2 described later is applied to the bottom surface of the concave portion 11. The adhesive 3 is partially applied to a plurality of locations on the bottom surface of the recess 11. The locations where the adhesive 3 is applied are preferably arranged in a well-balanced manner in consideration of fixing the semiconductor element 2 to be described later.
If it is possible to obtain an adhesive strength sufficient to fix the resin, it need not be so large, but a smaller one is more convenient.
In addition, the thickness of the layer of the adhesive 3 is set to be large enough to form a gap 81 between the semiconductor element 2 and the bottom surface of the recess 11 that is sufficient for the sealing material 6 described later to flow. The adhesive 3
May be applied to the edge of the first main surface of the semiconductor element 2 as shown in FIG.

FIGS. 1B and 1C show a semiconductor mounting process for mounting the semiconductor element 2 in the recess of the semiconductor mounting substrate 1. FIG. As shown, the semiconductor element 2 is
1 has an outer dimension smaller than the opening of the through hole 12 and larger than the opening of the through hole 12, and has a thickness smaller than the depth of the concave portion 11. I have. The semiconductor element 2 has its first main surface fixed to the bottom surface of the recess 11 with the adhesive 3 such that the center of the semiconductor element 2 and the opening of the through hole 12 coincide with each other. The strength at which the semiconductor element 2 is fixed by the adhesive 3 may be at least a level at which the connection operation between the connection electrode 21 and the surface electrode 14 of the semiconductor mounting substrate 1 can be performed without dropping the semiconductor element 2. However, a so-called temporary adhesion level may be used. In other words, the reason is that the semiconductor element 2 is supported by the support portion 5 in the sealing step described later, and is finally firmly fixed in the concave portion 11 by resin sealing. At this time, a gap 81 is formed between the first main surface of the semiconductor element 2 fixed in the recess 11 as described above and the bottom surface of the recess 11, and a side end face of the semiconductor element 2 and the recess 11 are formed. A gap 82 is also formed between the side walls.

The semiconductor mounting substrate 1 in which the semiconductor element 2 is fixed in the concave portion 11 as described above passes through the through-hole 12 in the vicinity of the connection electrode 21 and the through-hole 12 in the surface electrode 14 of the semiconductor mounting substrate 1. The parts are connected by bonding wires 4.

FIGS. 1D and 1E show a sealing process for performing a resin sealing process on the semiconductor mounting substrate 1 on which the semiconductor element 2 is mounted in the above process. In this sealing step, at least a connection portion between the connection electrode 21 of the semiconductor element 2 connected through the through hole 12 and the surface electrode 14 of the semiconductor mounting substrate 1, that is, the bonding wire 4, and one end of the bonding wire 4 Connection electrode 2
1 and the joint between the other end of the bonding wire 4 and the surface electrode 14 are resin-sealed. Therefore, the area to be resin-sealed by the sealing material is at least in the through hole 12 and the semiconductor mounting substrate 1 from the through hole 12.
It is a part that rises slightly from the surface. In this sealing step, resin sealing is performed by sandwiching the semiconductor mounting substrate 1 between the first and second molds A and B corresponding to the front and back surfaces of the semiconductor mounting substrate 1, respectively. Will be The first metal A is provided with a molding space A1 for filling a sealing material which is recessed at a position corresponding to the through hole 12 on a side in contact with the semiconductor mounting substrate 1, and a resin injection path A2 communicating with the recess A1.
It has.

What is important at this time is to provide a supporting portion 5 for supporting the two main surfaces of the semiconductor element 2 facing the second mold B. Here, a spacer 5 a interposed between the semiconductor element 2 and the second mold B is used as the support portion 5. As the spacer, it is preferable to use a spacer made of a heat-resistant material so as to withstand the molding temperature at the time of filling the sealing material 6. For example, a plate-shaped material made of a heat-resistant rubber such as silicone rubber, a fluorine-based resin, or a ceramic And a plate-like material made of an inorganic material such as a metal or the like. The size of the spacer 5a is preferably substantially equal to the size of the opening of the recess 11, and in this case,
The filled sealing material 6 can be prevented from flowing out to the second main surface side of the semiconductor element 2 or the back side of the semiconductor mounting substrate 1.
In addition, instead of using the spacer 5a as the support part 5, as shown in FIG.
A convex portion B1 for supporting the two main surfaces can also be provided.

Resin sealing is performed by first and second molds A and B.
The sealing material 6 is injected into the molding space A1 from the resin injection path A2 of the first mold A with the semiconductor mounting substrate 1 interposed therebetween and the second main surface of the semiconductor element 2 supported as described above. And hardening. At this time, the semiconductor element 2 receives a pressing force due to the injection pressure of the sealing material 6. However, since the second main surface thereof is supported, there is no deformation or distortion, and as a result, the recess 11 is thin. Warpage of the central portion 16 of the semiconductor mounting substrate 1, cracking of the semiconductor element and generation of microcracks are prevented. The sealing material 6 injected as described above fills the molding space A1 and the inside of the through hole 12 of the semiconductor mounting substrate 1, and further has a gap between the first main surface of the semiconductor element 2 and the bottom surface of the concave portion 11. 81 and a gap 82 between the side end surface of the semiconductor element 2 and the side wall of the recess 11
To fill the gaps 81 and 82 as well. As a result, the connection between the connection electrode 21 of the semiconductor element 2 and the surface electrode 14 of the semiconductor mounting substrate 1, that is, the bonding wire 4 is sealed, and the first main surface and side end faces of the semiconductor element 2 are also sealed. Is stopped. Thus, a semiconductor device is obtained as shown in FIG. This semiconductor device can be mounted on a motherboard C, similarly to the semiconductor device shown in FIG.
It is also possible to stack and highly integrate as shown in FIG.

FIGS. 4A to 4F are cross-sectional views showing a manufacturing method according to the second embodiment of the present invention. The manufacturing method according to the second embodiment will be described in the order of steps. Note that the semiconductor mounting substrate 1 and the semiconductor element 2 used in the second embodiment are the same as those in the first embodiment, and a description thereof will be omitted.

FIGS. 4B and 4C show a semiconductor mounting process for mounting the semiconductor element 2 in the concave portion of the semiconductor mounting substrate 1. FIG. Since the semiconductor mounting process is performed in the same manner as in the first embodiment, the description is omitted here.

FIGS. 4D and 4E show a sealing step for performing a resin sealing process on the semiconductor mounting substrate 1 on which the semiconductor element 2 is mounted in the above steps. In the second embodiment, this sealing step is divided into a first sealing step shown in FIG. 4D and a second sealing step shown in FIG.

First, in the first sealing step, a liquid sealing material 61 is used to form a gap 81 between the bottom surface of the concave portion 11 of the semiconductor mounting substrate 1 and the first main surface of the semiconductor element 2, A gap 8 between the outer peripheral end surface of the second and the side wall of the concave portion 11
2 and the liquid sealing material 61 is cured to perform primary sealing. At this time, the filling of the gaps 81 and 82 with the liquid sealing material 61 can be performed as follows. That is, this is achieved by supplying the liquid sealing material 61 onto the semiconductor element 2 from the through hole 12 and sucking the liquid sealing material 61 from the gap 81 to the gap 82 by capillary action. At this time, the leakage of the liquid sealing material 61 from the gap 82 is prevented by the surface tension of the liquid sealing material 61. The amount of the sealing material 61 is preferably set to an amount sufficient to fill the gaps 81 and 82. The appropriate amount of the liquid sealing material 61 is determined depending on the size of the through hole 12, the size of the gaps 81 and 82, and the viscosity of the liquid sealing material 61.

Next, in the second sealing step, the semiconductor mounting substrate 1 after the primary sealing with the liquid sealing material 61 is replaced with the semiconductor mounting substrate 1 in the same manner as in the first embodiment. The sealing material 62 is injected into the molding space A1 from the resin injection path A2 of the first mold A and is cured by being sandwiched between the first and second molds A and B respectively corresponding to the front and back surfaces. Thereby, the secondary sealing is performed. At this time, similarly to the first embodiment, a support portion 5 for supporting the second main surface of the semiconductor element 2 can be provided. However, in the second embodiment, the semiconductor element 2 is primarily sealed. Is firmly integrated with the central portion of the semiconductor mounting substrate 1,
Is provided so as to withstand the injection pressure of the sealing material 62 without providing the sealing member 62, and the secondary sealing is performed in a state where the supporting portion 5 is omitted and there is a gap between the semiconductor element 2 and the second mold B. It is carried out. However, in this case, it is desirable that the injection pressure of the sealing material 62 is weakened as compared with the case where the support portion 5 is provided, and the secondary sealing is performed. In the second embodiment, the semiconductor element 2 and the central portion of the semiconductor mounting substrate 1 are firmly integrated by the primary sealing, and the strength is improved.
The generation of cracks and microcracks in the semiconductor element can be prevented.

In the second embodiment, as described above, FIG.
A semiconductor device is obtained as shown in FIG.
The semiconductor device can be mounted on the motherboard C, similarly to the semiconductor device shown in FIG. 6, and can also be stacked and highly integrated as shown in FIG.

FIGS. 5A to 5E are cross-sectional views showing a manufacturing method according to the third embodiment of the present invention. The manufacturing method according to the third embodiment will be described in the order of steps.

The manufacturing method according to the third embodiment will be described in the order of steps. In the third embodiment, a semiconductor mounting substrate 1 and a semiconductor element 2 similar to those of the first embodiment are prepared, and the semiconductor mounting substrate 1 is provided thereon with a frame as shown in FIG. 7 is used. The frame body 7 has a surface circuit 72 formed on the surface of an insulating substrate 70 having a frame hole 74 having a frame hole opened at the center in the center. A corresponding back surface circuit 1 is formed, and an end surface electrode 71 connecting the front surface circuit 72 and the back surface circuit 73 is formed on a side end surface of the substrate. The front surface circuit 72, the back surface circuit 73, and the end surface electrode 71 of the frame 7 are formed so as to correspond to the front surface circuit 14, the back surface circuit 15, and the end surface electrode 13 of the semiconductor mounting substrate 1, respectively. The frame 7 is formed by connecting the back surface circuit 73 of the frame 7 to the semiconductor mounting substrate 1.
The surface circuit 14 is mounted and fixed on the semiconductor mounting substrate 1 in a state where the surface circuit 14 is aligned and connected. Here, the semiconductor mounting substrate 1 on which the frame 7 is mounted is used thereafter, but the timing at which the frame 7 is provided on the semiconductor mounting substrate 1 is before the second sealing step described later. There is no particular limitation. The description of the semiconductor mounting substrate 1 and the semiconductor element 2 is the same as that of the first embodiment, and thus will not be repeated.

FIGS. 5B and 5C show a semiconductor mounting process for mounting the semiconductor element 2 in the recess of the semiconductor mounting substrate 1. FIG. Also in this semiconductor mounting process, the frame 7
Except for using the semiconductor mounting substrate 1 provided with, the procedure is performed in the same manner as in the first embodiment, and the description is omitted here.

FIGS. 5D and 5E show a sealing step for performing a resin sealing process on the semiconductor mounting substrate 1 on which the semiconductor element 2 is mounted in the semiconductor mounting step. In the third embodiment, this sealing step is divided into a first sealing step shown in FIG. 5D and a second sealing step shown in FIG.

First, in the first sealing step, the first liquid sealing material 63 is used to form the recess 1 of the semiconductor mounting substrate 1.
1 between the bottom surface of the semiconductor device 1 and the first main surface of the semiconductor element 2
1 and the gap 82 between the outer peripheral end surface of the semiconductor element 2 and the side wall of the concave portion 11 is filled, and the first liquid sealing material 63 is cured to perform primary sealing. Since the first sealing step can be performed in the same manner as the method of the first sealing step in the second embodiment, a more detailed description will be omitted.

Next, in the second sealing step, the semiconductor mounting board 1 after the primary sealing is
The connection portion between the connection electrode 21 of the semiconductor element 2 and the surface electrode 14 of the semiconductor mounting substrate 1, that is, the bonding wire 4 is resin-sealed by pouring and curing the second liquid sealing material 64 into the substrate 4. Things. The filling amount of the second liquid sealing material 64 is
If it can be sealed, it is not necessary to increase it more than necessary. In the third embodiment, since the injection pressure for filling the sealing material 6 is not required at the time of resin sealing, the semiconductor mounting substrate 1 and the semiconductor element 2 are not distorted. 1 warpage, cracking of the semiconductor element 2 and generation of microcracks can be prevented.

In the second embodiment, a semiconductor device is obtained as described above. This semiconductor device can be mounted on a motherboard C, similarly to the semiconductor device shown in FIG. In addition, according to the case shown in FIG. 9, high integration can be achieved by stacking the semiconductor mounting substrate 1 of the upper semiconductor device on the frame 7 of the lower semiconductor device.

Although the embodiment of the present invention has been described above, it goes without saying that the present invention is not limited to the above embodiment.

[0041]

As described above, the method of manufacturing a semiconductor device according to the present invention includes the above-described three aspects. In any of the aspects, the warpage of the semiconductor mounting substrate and the semiconductor element Cracks and microcracks can be prevented.

In the production method according to the first aspect of the present invention,
In a state where the second main surface of the semiconductor element is supported from the back side of the semiconductor mounting substrate, at least the sealing material is inserted into the through hole of the semiconductor mounting substrate from the resin injection path provided in the first mold. The semiconductor element is prevented from being pushed down by the injection pressure of the sealing material. Therefore, it is possible to prevent the warpage of the semiconductor mounting substrate, the occurrence of cracks in the semiconductor element, and the occurrence of microcracks. In the first aspect, in the semiconductor mounting step, the bottom surface of the concave portion of the semiconductor mounting substrate and the first main surface of the semiconductor element are partially adhered to each other so that a gap exists between them. It is preferable that the semiconductor element is mounted in the recess. In this case, the sealing material injected into the through-hole is formed by a gap between the bottom surface of the recess and the semiconductor element, and a side wall of the recess and a side end face of the semiconductor element. Flows into and fills these gaps, so that the first main surface and side end faces of the semiconductor element can be sealed.

In the production method according to the second aspect of the present invention,
The semiconductor mounting substrate on which the semiconductor element is mounted in the semiconductor mounting step, the gap between the bottom surface of the concave portion of the semiconductor mounting substrate and the first main surface of the semiconductor element by a liquid sealing material in the first sealing step, By filling the gap between the outer peripheral end face of the semiconductor element and the side wall of the recess and curing the liquid sealing material, the first main surface and the side end face of the semiconductor element are sealed. At the same time, the central portion of the semiconductor mounting substrate and the semiconductor element are integrated with the cured liquid sealing material to increase the thickness, so that the strength of this portion is improved. Therefore, in the subsequent second sealing step, the central portion of the integrated semiconductor mounting substrate and the semiconductor element withstand the injection pressure of the sealing material from the resin injection path of the first mold. And warp of the semiconductor mounting substrate,
The generation of cracks and microcracks in the semiconductor element can be prevented.

In the manufacturing method according to the third aspect of the present invention,
The semiconductor mounting substrate on which the semiconductor element is mounted in the semiconductor mounting step is, in the first sealing step, using the first liquid sealing material and the concave bottom surface of the semiconductor mounting substrate and the first main surface of the semiconductor element. And the gap between the outer peripheral end face of the semiconductor element and the recess side wall are filled and cured, whereby the first main surface and the side end face of the semiconductor element are sealed. Then, in the second sealing step, the second liquid sealing material is poured into the frame hole of the frame body and cured, so that the connection portion between the connection electrode of the semiconductor element and the surface electrode of the semiconductor mounting substrate is formed. It is sealed with resin. As described above, since the injection pressure for filling the sealing material is not required at the time of resin sealing, the semiconductor mounting substrate and the semiconductor element are not distorted, and therefore, the semiconductor mounting substrate is warped and the semiconductor element is not deformed. The occurrence of cracks and microcracks can be prevented.

[Brief description of the drawings]

FIGS. 1A to 1F are cross-sectional views illustrating steps of a method for manufacturing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a plan view showing a semiconductor element coated with an adhesive for bonding to a semiconductor mounting substrate in the embodiment.

FIG. 3 is a cross-sectional view showing a modification of the sealing step in the embodiment.

FIGS. 4A to 4F are cross-sectional views illustrating steps of a method for manufacturing a semiconductor device according to a second embodiment of the present invention.

FIGS. 5A to 5E are cross-sectional views illustrating steps of a method for manufacturing a semiconductor device according to a third embodiment of the present invention.

FIG. 6 is a cross-sectional view showing an example of a semiconductor device to which the manufacturing method according to the present invention can be applied.

FIG. 7 is a perspective view of an essential part of a semiconductor mounting substrate used in the semiconductor device shown in FIG. 6;

8 is a cross-sectional view showing a mounted state in which the semiconductor devices shown in FIG. 6 are stacked.

9 is a cross-sectional view of the semiconductor device during resin sealing, showing a case where the semiconductor device shown in FIG. 6 is resin-sealed by a conventional method when manufacturing the semiconductor device.

[Explanation of symbols]

 Reference Signs List 1 semiconductor mounting substrate 10 insulating substrate 11 concave portion 12 through hole 14 surface circuit 2 semiconductor element 21 connecting electrode 3 adhesive 4 bonding wire 5 supporting portion 5a spacer 6 sealing material A first mold A2 resin injection path B first Second mold B1 convex part

Claims (7)

[Claims] 1. An insulating substrate having opposed front and back surfaces, a surface circuit extending from an edge of the front surface to a central portion is formed on at least the front surface thereof, and a concave portion for mounting a semiconductor element is provided in the central portion of the rear surface. The recess is formed in the recess of the semiconductor mounting substrate, wherein a through hole having a smaller opening area than the opening of the recess is formed at the center of the bottom surface of the recess at both the front and back sides. Having an outer dimension smaller than the opening of the through hole and having a thickness smaller than the depth of the concave portion, and having a thickness smaller than the depth of the concave portion; A semiconductor element having a connection electrode at the center of the main surface is mounted by fixing the first main surface to the bottom surface of the recess so that the center of the semiconductor element and the opening of the through hole are aligned. And the half through the through hole A semiconductor mounting step of connecting a connection electrode of a conductor element and a surface electrode of the semiconductor mounting substrate; and a connection electrode of the semiconductor element and a surface electrode of the semiconductor mounting substrate connected through the through hole. And a sealing step of resin-sealing a connection portion with the semiconductor device. In the sealing step, the semiconductor mounting substrate on which the semiconductor element is mounted is mounted on the semiconductor mounting board. Sandwiched between first and second molds respectively corresponding to the front and back sides of the substrate for mounting, and the second main surface of the semiconductor element is supported from the back side of the semiconductor mounting substrate, A method of manufacturing a semiconductor device, wherein resin sealing is performed by injecting at least a sealing material into at least the through hole of the semiconductor mounting substrate from a resin injection path provided in one mold. 2. In the encapsulating step, a spacer is provided between the semiconductor element mounted on the semiconductor mounting substrate and the second mold to fill a gap formed therebetween. 2. The method of manufacturing a semiconductor device according to claim 1, wherein said second main surface is supported from a back side of said semiconductor mounting substrate. 3. In the encapsulating step, the second mold is provided with a convex portion that comes into contact with a second main surface of the semiconductor element mounted on the semiconductor mounting substrate, thereby providing a semiconductor element. 2. The method according to claim 1, wherein the second main surface is supported from a back side of the semiconductor mounting substrate. 4. In the semiconductor mounting step, the bottom surface of the concave portion of the semiconductor mounting substrate and the first main surface of the semiconductor element are partially adhered, and the semiconductor element is mounted in a state where a gap exists between them. 4. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is mounted in the recess. 5. In the sealing step, a gap is formed between a bottom surface of the concave portion of the semiconductor mounting substrate and a first main surface of the semiconductor element and an outer peripheral end face of the semiconductor element by using a liquid sealing material. 5. The method of manufacturing a semiconductor device according to claim 4, wherein after filling and curing the gap between the recess and the side wall, resin sealing is performed using the mold. 6. An insulating substrate having opposed front and rear surfaces, a surface circuit extending from an edge of the front surface to a central portion is formed on at least the front surface thereof, and a concave portion for mounting a semiconductor element is provided at a central portion of the rear surface. The recess is formed in the recess of the semiconductor mounting substrate, wherein a through hole having a smaller opening area than the opening of the recess is formed at the center of the bottom surface of the recess at both the front and back sides. Having an outer dimension smaller than the opening of the through hole and having a thickness smaller than the depth of the concave portion, and having a thickness smaller than the depth of the concave portion; A semiconductor element having a connection electrode at the center of the main surface is mounted by fixing the first main surface to the bottom surface of the recess so that the center of the semiconductor element and the opening of the through hole are aligned. And the half through the through hole A semiconductor mounting step of connecting a connection electrode of a conductor element and a surface electrode of the semiconductor mounting substrate; and a step of connecting the connection electrode of the semiconductor element and the surface electrode of the semiconductor mounting substrate connected through the through hole. A method of manufacturing a semiconductor device, comprising: sealing a connection portion with a resin; and a sealing step, wherein in the semiconductor mounting step, a bottom surface of the concave portion of the semiconductor mounting substrate and a first main surface of the semiconductor element are partially The semiconductor element is mounted in the concave portion in a state where a gap is present between the semiconductor device and the semiconductor device by using a liquid sealing material. A first sealing step of filling the gap between the first main surface of the semiconductor element and the gap between the outer peripheral end face of the semiconductor element and the side wall of the recess, and curing the gap.
After the first sealing step, the semiconductor mounting substrate on which the semiconductor element is mounted is sandwiched between first and second molds respectively corresponding to the front and back surfaces of the semiconductor mounting substrate. Including a second sealing step of injecting a sealing material at least into the through hole of the semiconductor mounting substrate from a resin injection path provided in the first mold to perform resin sealing. A method for manufacturing a semiconductor device, comprising: 7. An insulating substrate having opposing front and back surfaces, a surface circuit extending from an edge of the front surface to a central portion is formed on at least the front surface thereof, and a concave portion for mounting a semiconductor element is provided at a central portion of the rear surface. The recess is formed in the recess of the semiconductor mounting substrate, wherein a through hole having a smaller opening area than the opening of the recess is formed at the center of the bottom surface of the recess at both the front and back sides. Having an outer dimension smaller than the opening of the through hole and having a thickness smaller than the depth of the concave portion, and having a thickness smaller than the depth of the concave portion; A semiconductor element having a connection electrode at the center of the main surface is mounted by fixing the first main surface to the bottom surface of the recess so that the center of the semiconductor element and the opening of the through hole are aligned. And the half through the through hole A semiconductor mounting step of connecting a connection electrode of a conductor element and a surface electrode of the semiconductor mounting substrate; and a step of connecting the connection electrode of the semiconductor element and the surface electrode of the semiconductor mounting substrate connected through the through hole. A method of manufacturing a semiconductor device, comprising the steps of: sealing a connection portion with a resin; and sealing the connection portion with a resin. A frame body, wherein in the semiconductor mounting step, the bottom surface of the concave portion of the semiconductor mounting substrate and the first main surface of the semiconductor element are partially adhered to each other so that a gap exists between them. The semiconductor element is mounted in the recess, the sealing step is a gap between the bottom surface of the recess of the semiconductor mounting substrate and the first main surface of the semiconductor element using a first liquid sealing material, And the above semiconductor element A first sealing step of filling the gap between the outer peripheral end face and the side wall of the concave portion and curing, and after the first sealing step, a second liquid sealing material is inserted into a frame hole of the frame body. Pouring and curing, including a second sealing step of resin-sealing the connection portion between the connection electrode of the semiconductor element and the surface electrode of the semiconductor mounting substrate, Production method.