JPH11134935A - Conductive fine particles, anisotropic conductive adhesive and conductive connection structure - Google Patents
Conductive fine particles, anisotropic conductive adhesive and conductive connection structureInfo
- Publication number
- JPH11134935A JPH11134935A JP29742397A JP29742397A JPH11134935A JP H11134935 A JPH11134935 A JP H11134935A JP 29742397 A JP29742397 A JP 29742397A JP 29742397 A JP29742397 A JP 29742397A JP H11134935 A JPH11134935 A JP H11134935A
- Authority
- JP
- Japan
- Prior art keywords
- fine particles
- conductive
- conductive fine
- concentration
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
Landscapes
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
Abstract
(57)【要約】
【課題】 接続抵抗が低く、接続時の電流容量が大き
く、接続が安定していてリーク現象を起こさない導電性
微粒子、異方性導電接着剤及び導電接続構造体を提供す
る。
【解決手段】 金属球を核とする導電性微粒子であっ
て、上記金属球は、平均粒径0.3〜25μm、アスペ
クト比1.5未満、CV値40%以下のものである導電
性微粒子。PROBLEM TO BE SOLVED: To provide conductive fine particles, anisotropic conductive adhesive, and conductive connection structure which have a low connection resistance, a large current capacity at the time of connection, are stable in connection, and do not cause a leak phenomenon. I do. SOLUTION: The conductive fine particles having a metal sphere as a nucleus, wherein the metal sphere has an average particle diameter of 0.3 to 25 μm, an aspect ratio of less than 1.5, and a CV value of 40% or less. .
Description
【0001】[0001]
【発明の属する技術分野】本発明は、微細電極間の接続
に用いられる導電性微粒子、異方性導電接着剤及び導電
接続構造体に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to conductive fine particles, anisotropic conductive adhesive and conductive connection structure used for connection between fine electrodes.
【0002】[0002]
【従来の技術】異方性導電材料は、液晶ディスプレー、
パーソナルコンピュータ、携帯通信機器等のエレクトロ
ニクス製品において、半導体素子等の小型部品を基板に
電気的に接続したり、基板同士を電気的に接続するため
に使用されている。2. Description of the Related Art Anisotropic conductive materials include liquid crystal displays,
2. Description of the Related Art In electronic products such as personal computers and portable communication devices, small electronic components such as semiconductor elements are used to electrically connect substrates and to electrically connect substrates.
【0003】このような異方性導電材料としては、導電
性微粒子をバインダー樹脂に混合したもの等が用いられ
ている。この導電性微粒子としては、有機基材粒子又は
無機基材粒子の表面に金属メッキを施したものが用いら
れてきた。この導電性微粒子としては、例えば、特公平
6−96771号公報、特開平4−36902号公報、
特開平4−269720号公報、特開平3−25771
0号公報等に開示されたもの等がある。As such an anisotropic conductive material, a material obtained by mixing conductive fine particles with a binder resin is used. As the conductive fine particles, those obtained by applying metal plating to the surface of organic base particles or inorganic base particles have been used. As the conductive fine particles, for example, Japanese Patent Publication No. 6-96871, Japanese Patent Application Laid-Open No. 4-36902,
JP-A-4-269720, JP-A-3-25771
No. 0 is disclosed.
【0004】このような導電性微粒子をバインダー樹脂
と混ぜ合わせてフィルム状又はペースト状にした異方性
導電接着剤材料としては、例えば、特開昭63−231
889号公報、特開平4−259766号公報、特開平
3−291807号公報、特開平5−75250号公報
等に開示されたもの等がある。As an anisotropic conductive adhesive material obtained by mixing such conductive fine particles with a binder resin to form a film or paste, for example, JP-A-63-231
889, JP-A-4-259766, JP-A-3-291807, and JP-A-5-75250.
【0005】従来の異方性導電材料は、導電性微粒子の
基材として、電気的絶縁材料が使用されていることか
ら、接続時の電流容量が小さいという問題があった。The conventional anisotropic conductive material has a problem that the current capacity at the time of connection is small since an electrically insulating material is used as a base material of the conductive fine particles.
【0006】特に近年、電子機器や電子部品が小型化す
るに伴い、基板等の配線が微細になり、接続部の電気抵
抗が大きくなる傾向にある。更に、最近開発されている
プラズマディスプレイ用途等の素子は、大電流駆動タイ
プとなっていることもあり、大電流対応が必要とされて
きている。電流容量の問題を解決するためには、異方性
導電材料中の導電性微粒子の濃度を上げる方法がある
が、濃度を上げると隣接する電極間でのリークが発生し
易くなるという問題があった。In particular, in recent years, as electronic devices and electronic components have been reduced in size, wirings on substrates and the like have become finer, and the electrical resistance of connection portions tends to increase. Furthermore, recently developed devices for plasma display applications and the like may be of a large current drive type, and are required to handle large currents. In order to solve the problem of the current capacity, there is a method of increasing the concentration of the conductive fine particles in the anisotropic conductive material. However, when the concentration is increased, there is a problem that a leak easily occurs between adjacent electrodes. Was.
【0007】また、従来の異方性導電材料は、接続しよ
うとする半導体、小型部品、基板等の電極と、導電性微
粒子との接続抵抗が高いという問題があった。これは、
電極として使用される材料として、通常、アルミニウ
ム、ニッケル、銅等が用いられているが、これらの表面
は酸化されており、導電性微粒子がこれらの電極に接触
する際、表面酸化物層を突き破れるだけの固さを有して
いなかったことが原因であると考えられる。また、電極
と導電性微粒子との接触面積が小さいために、接触抵抗
値が軽減されないという問題があった。[0007] Further, the conventional anisotropic conductive material has a problem that the connection resistance between the electrode to be connected to a semiconductor, a small component, a substrate or the like and the conductive fine particles is high. this is,
Aluminum, nickel, copper, etc. are usually used as the material used for the electrodes, but their surfaces are oxidized, and when the conductive fine particles come into contact with these electrodes, they hit the surface oxide layer. It is considered that the cause was that it did not have hardness enough to break. Further, since the contact area between the electrode and the conductive fine particles is small, there is a problem that the contact resistance value is not reduced.
【0008】また、導電性微粒子として金属粉を用いる
技術も特開平8−273440号公報等に開示されてい
る。しかしながら、金属粉は電気容量は大きくとれるも
のの、平均粒径が25μm以下になると真球状のものが
得にくく、また、真球状のものであってもアスペクト比
が比較的大きいものが多く、更には、粒径が揃っておら
ずCV値が大きいため、導通に関与しない金属粉が大量
に発生し、電極間でのリークが発生しやすいという欠点
があった。[0008] A technique using metal powder as the conductive fine particles is also disclosed in Japanese Patent Application Laid-Open No. 8-273440. However, although the metal powder can have a large electric capacity, it is difficult to obtain a true spherical one when the average particle size is 25 μm or less, and even a true spherical one often has a relatively large aspect ratio. In addition, since the particle diameters are not uniform and the CV value is large, a large amount of metal powder not involved in conduction is generated, and there is a disadvantage that leakage between the electrodes is likely to occur.
【0009】[0009]
【発明が解決しようとする課題】本発明は、上記に鑑
み、接続抵抗が低く、接続時の電流容量が大きく、接続
が安定していてリーク現象を起こさない導電性微粒子、
異方性導電接着剤及び導電接続構造体を提供することを
目的とする。SUMMARY OF THE INVENTION In view of the above, the present invention provides a conductive fine particle which has a low connection resistance, a large current capacity at the time of connection, a stable connection and does not cause a leak phenomenon.
It is an object to provide an anisotropic conductive adhesive and a conductive connection structure.
【0010】[0010]
【課題を解決するための手段】本発明1は、金属球を核
とする導電性微粒子であって、上記金属球は、平均粒径
0.3〜25μm、アスペクト比1.5未満、CV値4
0%以下のものである導電性微粒子である。以下に本発
明を詳述する。The present invention provides conductive fine particles having metal spheres as nuclei, wherein the metal spheres have an average particle size of 0.3 to 25 μm, an aspect ratio of less than 1.5, and a CV value. 4
The conductive fine particles are 0% or less. Hereinafter, the present invention will be described in detail.
【0011】本発明の導電性微粒子は、金属球を核とす
るものである。上記金属球は、平均粒径0.3〜25μ
mのものである。0.3μm未満であると、接合すべき
電極面に導電性微粒子が接触せず、電極間に隙間がで
き、接触不良を発生する可能性があり、25μmを超え
ると、金属球の比重が大きいため、接着剤として使用す
る場合等に特殊な処理を行わないとマトリックス中に沈
降するという問題が発生するので、上記範囲に限定され
る。好ましくは、1〜10μmである。The conductive fine particles of the present invention have metal spheres as nuclei. The metal sphere has an average particle size of 0.3 to 25 μm.
m. If it is less than 0.3 μm, the conductive fine particles do not contact the surface of the electrode to be joined, and a gap may be formed between the electrodes, which may cause poor contact. If it exceeds 25 μm, the specific gravity of the metal sphere is large. For this reason, if a special treatment is not performed when the adhesive is used as an adhesive, a problem of settling in the matrix occurs. Preferably, it is 1 to 10 μm.
【0012】上記金属球は、アスペクト比1.5未満の
ものである。1.5以上であると、粒子径が不揃いとな
るため、導電性微粒子を介して電極同士を接触させる
際、接触しない粒子が大量に発生し電極間でのリーク現
象が発生しやすいので、上記範囲に限定される。好まし
くは、1.2未満であり、より好ましくは、1.15未
満であり、更に好ましくは、1.1未満である。通常、
金属粒子は25μm以下になると粒子同士が合着する等
の理由で真球状のものが得にくく、アスペクト比が比較
的大きいものが多い。また、粒径が揃っておらず、CV
値も大きいことがおおい。従来、これらの金属粒子は分
級によってもなかなか精度の良いものが得られなかった
が、その原因が金属粒子同士の引力にあることを見出し
た。すなわち、分散媒中の金属濃度を低くすることでア
スペクト比を制御した。しかしながら本発明は上述の方
法に限定されない。なお、上記アスペクト比とは、粒子
の平均長径を平均短径で割った値である。The metal sphere has an aspect ratio of less than 1.5. When it is 1.5 or more, since the particle diameters become irregular, when the electrodes are brought into contact with each other via the conductive fine particles, a large amount of particles that do not come into contact with each other and a leak phenomenon between the electrodes easily occur. Limited to range. It is preferably less than 1.2, more preferably less than 1.15, and even more preferably less than 1.1. Normal,
When the metal particles have a thickness of 25 μm or less, it is difficult to obtain true spherical particles because the particles are coalesced, and many have relatively large aspect ratios. In addition, the particle size is not uniform, and CV
The value should be large. Conventionally, it was difficult to obtain highly accurate metal particles by classification, but it was found that the cause was attraction between the metal particles. That is, the aspect ratio was controlled by lowering the metal concentration in the dispersion medium. However, the invention is not limited to the method described above. The aspect ratio is a value obtained by dividing the average major axis of the particle by the average minor axis.
【0013】上記金属球は、CV値40%以下のもので
ある。40%を超えると、粒子径が不揃いとなるため、
導電性微粒子を介して電極同士を接触させる際、接触し
ない粒子が大量に発生し電極間でのリーク現象が発生し
やすいので、上記範囲に限定される。好ましくは、20
%以下であり、より好ましくは、15%以下であり、更
に好ましくは、10%以下である。なお、上記CV値と
は、下記式 CV=(σ/Dn)×100 (σは、粒子径の標準偏差を表し、Dnは、数平均粒子
径を表す。)で表される値である。The metal sphere has a CV value of 40% or less. If it exceeds 40%, the particle diameter becomes uneven,
When the electrodes are brought into contact with each other via the conductive fine particles, a large amount of particles that do not come into contact with each other easily cause a leak phenomenon between the electrodes. Preferably, 20
% Or less, more preferably 15% or less, and still more preferably 10% or less. In addition, the said CV value is a value represented by the following formula CV = ((sigma) / Dn) * 100 ((sigma) represents the standard deviation of a particle diameter, and Dn represents a number average particle diameter.).
【0014】上記範囲の平均粒径、アスペクト比及びC
V値を有する金属球は、例えば、任意の金属球300個
を電子顕微鏡で観察することにより得ることができる。
また、上記金属球は、分散媒中に分散させ、落下速度に
よる分級を行うことにより得ることもできる。一般的
に、一定濃度以上の金属粒子を分散媒中に分散させる
と、金属粒子同士の間に働く、静電引力、磁力等の引力
により、金属粒子同士が合着するという現象が発生する
ため、精度の高い分級操作を行うことが難しい。従っ
て、精度の高い分級操作を行うためには、分散媒中の上
記金属球濃度を低くすることが好ましい。The average particle size, aspect ratio and C in the above range
A metal sphere having a V value can be obtained, for example, by observing 300 arbitrary metal spheres with an electron microscope.
Further, the metal spheres can also be obtained by dispersing the metal spheres in a dispersion medium and performing classification by a drop speed. Generally, when metal particles having a certain concentration or more are dispersed in a dispersion medium, a phenomenon occurs in which metal particles coalesce due to an attractive force such as an electrostatic attractive force or a magnetic force acting between the metal particles. It is difficult to perform highly accurate classification operation. Therefore, in order to perform a highly accurate classification operation, it is preferable to lower the concentration of the metal spheres in the dispersion medium.
【0015】上記金属球は、突起を有するものであるこ
とが好ましい。上記金属球に突起を形成することによ
り、接合すべき電極面の金属酸化物を突き破るか又は充
分に食い込みやすくなるので、接続抵抗が小さくなり、
導電接続性を安定化することができる。なお、上記突起
を有する金属材料とは、上記金属球の任意の表面0.2
5Dn 2 において、金属球の中心からの距離の差が0.
04Dnを超える粒子が30%以上存在するもののこと
を示す。The metal sphere has a projection.
Is preferred. By forming protrusions on the metal sphere
The metal oxide on the electrode surface to be joined
Because it is easy to cut into the minute, the connection resistance is reduced,
The conductive connectivity can be stabilized. The protrusion
Is a metal material having an arbitrary surface 0.2
5Dn Two, The difference in distance from the center of the metal sphere is 0.
30% or more of particles exceeding 04Dn
Is shown.
【0016】上記金属球は、樹脂により被覆されたもの
であることが好ましい。上記金属球の表面に絶縁層であ
る樹脂層を設けることにより、導電性微粒子相互の接触
による電極間のショートが防止される。特に、導電性微
粒子を絶縁性樹脂マトリックス中に分散させた接着剤と
して使用する場合には、電極を接続する際に電極間に挟
み込まれたこの接着剤の層が流動するが、絶縁性樹脂マ
トリックスと導電性微粒子との流れ方が異なるため、導
電性微粒子が絶縁性樹脂マトリックス中で密集すること
があり、この場合に非常に効果的である。Preferably, the metal sphere is coated with a resin. By providing a resin layer, which is an insulating layer, on the surface of the metal sphere, a short circuit between the electrodes due to contact between the conductive fine particles is prevented. In particular, when the conductive fine particles are used as an adhesive dispersed in an insulating resin matrix, the layer of the adhesive sandwiched between the electrodes flows when the electrodes are connected. Since the flow of the conductive fine particles differs from that of the conductive fine particles, the conductive fine particles may be concentrated in the insulating resin matrix, which is very effective in this case.
【0017】更に、絶縁層である上記樹脂層が、電極と
の接触部において加熱により軟化又は融解して押し除か
れることにより、上記金属球と電極とが直接接触し、ま
た、軟化又は融解した樹脂が電極間を固定するので、導
電持続性を安定化することができる。Further, the resin layer, which is an insulating layer, is softened or melted by heating at a contact portion with the electrode and is pushed away, so that the metal sphere directly contacts the electrode and is softened or melted. Since the resin fixes between the electrodes, the continuity of conductivity can be stabilized.
【0018】上記樹脂としては特に限定されず、例え
ば、ポリエチレン、エチレン−酢酸ビニル共重合体、エ
チレン−アクリル酸共重合体等のポリオレフィン類;ポ
リメチル(メタ)アクリレート、ポリエチル(メタ)ア
クリレート、ポリブチル(メタ)アクリレート等の(メ
タ)アクリレート重合体及び共重合体;ポリスチレン、
スチレン−アクリル酸エステル共重合体、SB型スチレ
ン−ブタジエンブロック共重合体、SBS型スチレン−
ブタジエンブロック共重合体、これらの水添化合物等の
ブロックポリマー;ビニル系重合体及び共重合体等の熱
可塑性樹脂、これらの架橋物;エポキシ樹脂、フェノー
ル樹脂、メラミン樹脂等の熱硬化性樹脂、これらの混合
物等が挙げられる。The resin is not particularly restricted but includes, for example, polyolefins such as polyethylene, ethylene-vinyl acetate copolymer and ethylene-acrylic acid copolymer; polymethyl (meth) acrylate, polyethyl (meth) acrylate, polybutyl ( (Meth) acrylate polymers and copolymers such as (meth) acrylate; polystyrene,
Styrene-acrylate copolymer, SB-type styrene-butadiene block copolymer, SBS-type styrene-
Butadiene block copolymers, block polymers such as hydrogenated compounds thereof; thermoplastic resins such as vinyl polymers and copolymers, crosslinked products thereof; thermosetting resins such as epoxy resins, phenol resins, and melamine resins; These mixtures and the like can be mentioned.
【0019】上記樹脂により形成される樹脂層は、20
0℃以下の温度で一旦軟化するものが好ましい。また、
上記樹脂層の厚みは、上記金属球の直径の3〜100%
であることが好ましい。The resin layer formed of the above resin has a thickness of 20
Those which once soften at a temperature of 0 ° C. or lower are preferred. Also,
The thickness of the resin layer is 3 to 100% of the diameter of the metal sphere.
It is preferred that
【0020】上記金属球を構成する金属としては特に限
定されず、例えば、金、白金、パラジウム、銀、銅、ニ
ッケル、コバルト、インジウム、錫、鉄、鉛、亜鉛、ク
ロム、アルミニウム、これらの合金等が挙げられる。こ
れらのうち、銀は、価格、酸化性、導電性等に優れてい
るので好ましい。また、銅は、比較的安価であり、マイ
グレーションを起こさず、また、硬質であり、電極表面
の絶縁性酸化被膜を容易に突き破ることが可能であるた
め、接続抵抗が低いので好ましい。また、ニッケルは、
比較的安価であり、マイグレーションを起こさず、ま
た、極めて硬質であり、電極表面の絶縁性酸化被膜を容
易に突き破ることが可能であるため、接続抵抗が低いの
で好ましい。The metal constituting the metal sphere is not particularly limited. For example, gold, platinum, palladium, silver, copper, nickel, cobalt, indium, tin, iron, lead, zinc, chromium, aluminum, and alloys thereof And the like. Among them, silver is preferable because it is excellent in price, oxidizing property, conductivity and the like. Further, copper is preferable because it is relatively inexpensive, does not cause migration, is hard, and can easily break through the insulating oxide film on the electrode surface, and has low connection resistance. Nickel is
It is preferable because it is relatively inexpensive, does not cause migration, is extremely hard, and can easily break through the insulating oxide film on the electrode surface, and has low connection resistance.
【0021】上記金属球の製造方法としては特に限定さ
れず、例えば、アトマイズ法、化学的還元法等が挙げら
れる。なお、上記金属球が銅からなるものである場合
は、酸化の点から、化学的還元法が好ましい。The method for producing the metal sphere is not particularly limited, and examples thereof include an atomizing method and a chemical reduction method. When the metal sphere is made of copper, a chemical reduction method is preferable from the viewpoint of oxidation.
【0022】本発明の導電性微粒子は、上記金属球を核
とするものであれば特に限定されるものではなく、例え
ば、上記金属球を、有機化合物、樹脂、無機物等により
被覆したもの等であってもよい。The conductive fine particles of the present invention are not particularly limited as long as they have the above-mentioned metal sphere as a nucleus. For example, the above-mentioned metal sphere is coated with an organic compound, resin, inorganic substance or the like. There may be.
【0023】本発明の導電性微粒子は、複数の電極間に
挟むことにより、これらの電極を接続し、一方の電極か
ら他方の電極へと本発明の導電性微粒子を介して電流を
流すことができるが、本発明の導電性微粒子は核材とし
て優れた導電性を有する上記金属球を用いているので、
接続時の電流容量が大きい。また、上記金属球は硬質で
あるので、電極表面の絶縁性酸化被膜を容易に突き破る
か又は充分に食い込むことが可能であるため、接続抵抗
は小さいものとなる。The conductive fine particles of the present invention are connected between these electrodes by being sandwiched between a plurality of electrodes, so that current can flow from one electrode to the other electrode via the conductive fine particles of the present invention. Although it is possible, since the conductive fine particles of the present invention use the metal sphere having excellent conductivity as a core material,
Large current capacity when connected. In addition, since the metal sphere is hard, it is possible to easily break through or sufficiently penetrate the insulating oxide film on the electrode surface, so that the connection resistance is small.
【0024】本発明2は、本発明1の導電性微粒子と絶
縁性樹脂とからなる異方性導電接着剤である。本明細書
において異方性導電接着剤は、異方性導電膜、異方性導
電ペースト、異方性導電インキを含むものとする。[0024] The present invention 2 is an anisotropic conductive adhesive comprising the conductive fine particles of the present invention 1 and an insulating resin. In this specification, the anisotropic conductive adhesive includes an anisotropic conductive film, an anisotropic conductive paste, and an anisotropic conductive ink.
【0025】本発明2の異方性導電接着剤において用い
られる絶縁性樹脂としては特に限定されず、例えば、ア
クリレート樹脂、エチレン−酢酸ビニル樹脂、スチレン
−ブタジエンブロック共重合体等の熱可塑性樹脂;グリ
シジル基を有するモノマーやオリゴマーとイソシアネー
ト等の硬化剤との硬化性組成物等の熱や光によって硬化
する組成物等が挙げられる。The insulating resin used in the anisotropic conductive adhesive of the present invention 2 is not particularly restricted but includes, for example, thermoplastic resins such as acrylate resins, ethylene-vinyl acetate resins and styrene-butadiene block copolymers; A composition curable by heat or light, such as a curable composition of a monomer or oligomer having a glycidyl group and a curing agent such as isocyanate, and the like can be given.
【0026】本発明2の異方性導電接着剤の塗工膜厚
は、10〜数百μmが好ましい。本発明2の異方性導電
接着剤を用いることができる接続対象としては、表面に
電極部が形成されたものであれば特に限定されず、例え
ば、基板、部品等が挙げられる。The coating thickness of the anisotropic conductive adhesive of the present invention 2 is preferably from 10 to several hundreds μm. The connection object to which the anisotropic conductive adhesive of the present invention 2 can be used is not particularly limited as long as an electrode portion is formed on the surface thereof, and examples thereof include a substrate and a component.
【0027】上記基板は、フレキシブル基板とリジッド
基板とに大別される。上記フレキシブル基板としては、
厚み50〜500μmの樹脂シートが好適に用いられ
る。上記樹脂シートとしては特に限定されず、例えば、
ポリイミド、ポリアミド、ポリエステル、ポリスルホン
等からなるもの等が挙げられる。The substrate is roughly divided into a flexible substrate and a rigid substrate. As the flexible substrate,
A resin sheet having a thickness of 50 to 500 μm is preferably used. The resin sheet is not particularly limited, for example,
Examples thereof include polyimide, polyamide, polyester, and polysulfone.
【0028】上記リジッド基板としては、樹脂製のもの
とセラミック製のものとが好適に用いられる。上記樹脂
製のリジッド基板としては特に限定されず、例えば、ガ
ラス繊維強化エポキシ樹脂、フェノール樹脂、セルロー
ス繊維強化フェノール樹脂等からなるもの等が挙げられ
る。また、上記セラミック製のリジッド基板としては特
に限定されず、例えば、二酸化ケイ素、アルミナ等から
なるもの等が挙げられる。As the rigid substrate, a resin substrate and a ceramic substrate are preferably used. The rigid substrate made of the above resin is not particularly limited, and examples thereof include those made of glass fiber reinforced epoxy resin, phenol resin, cellulose fiber reinforced phenol resin, and the like. The rigid substrate made of ceramic is not particularly limited, and examples thereof include those made of silicon dioxide, alumina, and the like.
【0029】上記基板は、単層構造の基板であってもよ
いが、単位面積当たりの電極数を増やすために、例え
ば、スルーホール形成等の手段により、複数の層を形成
し、相互に電気的接続を行わせる多層基板であってもよ
い。The substrate may be a substrate having a single layer structure. However, in order to increase the number of electrodes per unit area, a plurality of layers are formed by means such as formation of through holes and the like. It may be a multi-layer substrate that makes a physical connection.
【0030】上記部品としては特に限定されず、例え
ば、トランジスタ、ダイオード、IC、LSI等の半導
体等の能動部品;抵抗、コンデンサ、水晶振動子等の受
動部品等が挙げられる。The above components are not particularly limited, and include, for example, active components such as semiconductors such as transistors, diodes, ICs, and LSIs; and passive components such as resistors, capacitors, and crystal oscillators.
【0031】上記基板及び上記部品の表面に形成される
電極の形状としては特に限定されず、例えば、縞状、ド
ット状、任意形状のもの等が挙げられる。上記電極の材
質としては特に限定されず、例えば、金、銀、銅、ニッ
ケル、パラジウム、カーボン、アルミニウム、ITO等
が挙げられる。接続抵抗を低減させるために、銅、ニッ
ケル等の上に更に金を被覆したものを用いることもでき
る。上記電極の厚みは、0.1〜100μmが好まし
く、上記電極の幅は、1〜500μmが好ましい。The shape of the electrodes formed on the surfaces of the substrate and the component is not particularly limited, and examples thereof include stripes, dots, and arbitrary shapes. The material of the electrode is not particularly limited, and examples thereof include gold, silver, copper, nickel, palladium, carbon, aluminum, and ITO. In order to reduce the connection resistance, copper, nickel or the like further coated with gold can be used. The thickness of the electrode is preferably 0.1 to 100 μm, and the width of the electrode is preferably 1 to 500 μm.
【0032】本発明2の異方性導電接着剤と上記基板、
上記部品等との接合方法としては、例えば、以下のもの
がある。表面に電極が形成された基板又は部品の上に、
本発明2の異方性導電接着剤の一実施形態である異方性
導電膜を載せた後、もう一方の電極面を有する基板又は
部品を置き、加熱、加圧する。異方性導電膜を用いる代
わりに、スクリーン印刷やディスペンサー等の印刷手段
により、導電性微粒子を用いた導電性ペーストを所定量
用いることもできる。上記加熱、加圧には、ヒーターが
付いた圧着機やボンディングマシーン等が用いられる。The anisotropic conductive adhesive of the present invention 2 and the above substrate,
As a joining method with the above-mentioned parts and the like, for example, the following methods are available. On a substrate or component with electrodes formed on the surface,
After mounting the anisotropic conductive film which is one embodiment of the anisotropic conductive adhesive of the second invention, a substrate or component having the other electrode surface is placed, and heated and pressed. Instead of using an anisotropic conductive film, a predetermined amount of conductive paste using conductive fine particles can be used by printing means such as screen printing or a dispenser. For the above-mentioned heating and pressurizing, a crimping machine equipped with a heater, a bonding machine or the like is used.
【0033】上記異方性導電膜や異方性導電ペーストを
用いない方法も可能であり、例えば、導電性微粒子を介
して貼り合わせた二つの電極部の隙間に液状のバインダ
ーを注入した後、硬化させる方法等を用いることができ
る。It is also possible to use a method that does not use the anisotropic conductive film or the anisotropic conductive paste. For example, after injecting a liquid binder into a gap between two electrode portions bonded together via conductive fine particles, A curing method or the like can be used.
【0034】本発明2の異方性導電接着剤は、本発明1
の導電性微粒子からなるものであるので、電極同士を接
触させる際に、接触しない導電性微粒子がほとんど発生
せず、電極間でのリーク現象が発生しにくい。また、絶
縁性樹脂マトリックス中で導電性微粒子が沈降するとい
う問題もない。The anisotropic conductive adhesive of the present invention 2 is the same as that of the present invention 1
When the electrodes are brought into contact with each other, almost no non-contacting conductive particles are generated, and a leak phenomenon between the electrodes hardly occurs. Further, there is no problem that the conductive fine particles settle in the insulating resin matrix.
【0035】上述のようにして得られた基板又は部品の
接合体を、本明細書中では導電接続構造体という。すな
わち、本発明3は、本発明1の導電性微粒子を用いてな
る導電接続構造体である。The joined body of substrates or components obtained as described above is referred to as a conductive connection structure in this specification. That is, the present invention 3 is a conductive connection structure using the conductive fine particles of the present invention 1.
【0036】本発明3の導電接続構造体は、本発明1の
導電性微粒子を用いてなるものであるので、かなり大き
な電流であっても安定して流れることができる。また、
電極間でのリーク現象が発生しにくい。The conductive connection structure according to the third aspect of the present invention uses the conductive fine particles according to the first aspect of the present invention, and therefore can stably flow even with a considerably large current. Also,
Leakage between electrodes is less likely to occur.
【0037】[0037]
【実施例】以下に実施例を掲げて本発明を更に詳しく説
明するが、本発明はこれら実施例のみに限定されるもの
ではない。The present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples.
【0038】実施例1 平均粒径8μm、アスペクト比1.2、CV値42%の
銀球を水中に0.1%濃度で分散させ、落下速度による
分級を繰り返し行うことにより、本発明の導電性微粒子
(平均粒径8μm、アスペクト比1.2、CV値30%
の銀球)を得た。この導電性微粒子をエポキシ樹脂及び
アクリル樹脂の混合物をトルエンに溶解させたバインダ
ー溶液に混合、分散させた。次いで、導電性微粒子分散
溶液を離型フィルム上に一定厚みに塗布し、トルエンを
蒸発させ、異方性導電膜を作製した。膜厚は30μmで
あり、導電性微粒子は15%の濃度であった。Example 1 A silver sphere having an average particle diameter of 8 μm, an aspect ratio of 1.2, and a CV value of 42% was dispersed in water at a concentration of 0.1%, and classification by a drop speed was repeatedly performed to obtain a conductive material of the present invention. Particles (average particle size 8 μm, aspect ratio 1.2, CV value 30%
Silver ball). The conductive fine particles were mixed and dispersed in a binder solution obtained by dissolving a mixture of an epoxy resin and an acrylic resin in toluene. Next, the conductive fine particle dispersion solution was applied on the release film to a constant thickness, and toluene was evaporated to prepare an anisotropic conductive film. The film thickness was 30 μm, and the concentration of the conductive fine particles was 15%.
【0039】ガラス−エポキシ銅張り基板(厚み1.6
mm、配線幅50μm、電極ピッチ100μm)に得ら
れた異方性導電膜を貼付けた。この上に厚み100μm
のポリイミドフィルム基板(厚み30μm、配線幅50
μm、電極ピッチ100μm)を重ね合わせ、150
℃、2分間加熱、加圧し、導電接続構造体を作製した。Glass-epoxy copper-clad substrate (thickness 1.6)
mm, a wiring width of 50 μm, and an electrode pitch of 100 μm). 100μm thick on this
Polyimide film substrate (thickness 30 μm, wiring width 50
μm, electrode pitch 100 μm)
The mixture was heated and pressurized at 2 ° C. for 2 minutes to produce a conductive connection structure.
【0040】この導電接続構造体の接続抵抗値は0.0
1Ωと充分低く、隣接する電極間の接続抵抗は1×10
9 以上で線間絶縁性は充分保たれていた。また、通常、
異方性導電膜中の導電性微粒子の濃度を上げると電気抵
抗を下げることができるため、導電性微粒子の濃度を上
げていったところ、濃度が35%まで電極間のリークが
発生しなかった。The connection resistance value of this conductive connection structure is 0.0
1Ω, low enough, connection resistance between adjacent electrodes is 1 × 10
With 9 or more, the line insulation was sufficiently maintained. Also, usually
When the concentration of the conductive fine particles in the anisotropic conductive film is increased, the electric resistance can be reduced. Therefore, when the concentration of the conductive fine particles was increased, no leakage occurred between the electrodes up to a concentration of 35%. .
【0041】実施例2 アスペクト比1.17、CV値18%の銀球を用いたこ
と以外は実施例1と同様にテストしたところ、この導電
接続構造体の接続抵抗値は0.006Ωと充分低く、隣
接する電極間の接続抵抗は1×109 以上で線間絶縁性
は充分保たれていた。また、異方性導電膜中の導電性微
粒子の濃度を上げていったところ、濃度が40%まで電
極間のリークが発生しなかった。Example 2 A test was conducted in the same manner as in Example 1 except that a silver sphere having an aspect ratio of 1.17 and a CV value of 18% was used. The connection resistance value of this conductive connection structure was sufficiently 0.006Ω. The connection resistance between adjacent electrodes was 1 × 10 9 or more, and the line insulation was sufficiently maintained. In addition, when the concentration of the conductive fine particles in the anisotropic conductive film was increased, no leakage occurred between the electrodes until the concentration reached 40%.
【0042】実施例3 アスペクト比1.13、CV値13%の銀球を用いたこ
と以外は実施例1と同様にテストしたところ、この導電
接続構造体の接続抵抗値は0.004Ωと充分低く、隣
接する電極間の接続抵抗は1×109 以上で線間絶縁性
は充分保たれていた。また、異方性導電膜中の導電性微
粒子の濃度を上げていったところ、濃度が50%まで電
極間のリークが発生しなかった。Example 3 A test was conducted in the same manner as in Example 1 except that a silver sphere having an aspect ratio of 1.13 and a CV value of 13% was used. The connection resistance value of this conductive connection structure was sufficiently 0.004Ω. The connection resistance between adjacent electrodes was 1 × 10 9 or more, and the line insulation was sufficiently maintained. When the concentration of the conductive fine particles in the anisotropic conductive film was increased, no leakage occurred between the electrodes until the concentration reached 50%.
【0043】実施例4 アスペクト比1.05、CV値8%の銀球を用いたこと
以外は実施例1と同様にテストしたところ、この導電接
続構造体の接続抵抗値は0.002Ωと充分低く、隣接
する電極間の接続抵抗は1×109 以上で線間絶縁性は
充分保たれていた。また、異方性導電膜中の導電性微粒
子の濃度を上げていったところ、濃度が60%まで電極
間のリークが発生しなかった。Example 4 A test was conducted in the same manner as in Example 1 except that a silver sphere having an aspect ratio of 1.05 and a CV value of 8% was used. The connection resistance value of this conductive connection structure was sufficiently 0.002Ω. The connection resistance between adjacent electrodes was 1 × 10 9 or more, and the line insulation was sufficiently maintained. When the concentration of the conductive fine particles in the anisotropic conductive film was increased, no leakage occurred between the electrodes until the concentration reached 60%.
【0044】実施例5 平均粒径4μmの銀球を用いたこと以外は実施例2と同
様にテストしたところ、この導電接続構造体の接続抵抗
値は0.005Ωと充分低く、隣接する電極間の接続抵
抗は1×109 以上で線間絶縁性は充分保たれていた。
また、異方性導電膜中の導電性微粒子の濃度を上げてい
ったところ、濃度が35%まで電極間のリークが発生し
なかった。Example 5 A test was conducted in the same manner as in Example 2 except that a silver sphere having an average particle diameter of 4 μm was used. As a result, the connection resistance value of this conductive connection structure was sufficiently low at 0.005Ω, and the distance between adjacent electrodes was small. Had a connection resistance of 1 × 10 9 or more, and the line insulation was sufficiently maintained.
In addition, when the concentration of the conductive fine particles in the anisotropic conductive film was increased, no leakage occurred between the electrodes up to a concentration of 35%.
【0045】実施例6 銀球に0.4μmの銀粒子をハイブリタイザーを用いて
打ち込み、表面に突起をもたせたこと以外は実施例2と
同様にテストしたところ、この導電接続構造体の接続抵
抗値は0.004Ωと充分低く、隣接する電極間の接続
抵抗は1×10 9 以上で線間絶縁性は充分保たれてい
た。また、異方性導電膜中の導電性微粒子の濃度を上げ
ていったところ、濃度が40%まで電極間のリークが発
生しなかった。Example 6 0.4 μm silver particles were placed on silver spheres using a hybridizer.
Example 2 except that the projections were provided on the surface.
In a similar test, the connection resistance of this conductive connection structure was
Resistance value is sufficiently low at 0.004Ω, connection between adjacent electrodes
Resistance is 1 × 10 9As described above, sufficient insulation between wires is maintained.
Was. Also, increase the concentration of conductive fine particles in the anisotropic conductive film.
The leak between the electrodes occurred until the concentration reached 40%.
Did not live.
【0046】実施例7 銀球に1μmの熱可塑性ビニル系共重合樹脂をコーティ
ングしたこと以外は実施例2と同様にテストしたとこ
ろ、この導電接続構造体の接続抵抗値は0.006Ωと
充分低く、隣接する電極間の接続抵抗は1×109 以上
で線間絶縁性は充分保たれていた。また、異方性導電膜
中の導電性微粒子の濃度を上げていったところ、濃度が
60%まで電極間のリークが発生しなかった。Example 7 A test was conducted in the same manner as in Example 2 except that a silver sphere was coated with a 1 μm thermoplastic vinyl copolymer resin. The connection resistance value of this conductive connection structure was sufficiently low at 0.006Ω. The connection resistance between adjacent electrodes was 1 × 10 9 or more, and the line insulation was sufficiently maintained. When the concentration of the conductive fine particles in the anisotropic conductive film was increased, no leakage occurred between the electrodes until the concentration reached 60%.
【0047】実施例8 本発明の導電性微粒子(平均粒径8μm、アスペクト比
1.17、CV値20%の銀球)をエポキシ樹脂に混
合、分散させ、異方性導電ペーストを作製した。これ
を、ガラス−エポキシ銅張り基板(厚み1.6mm、配
線幅50μm、電極ピッチ100μm)にスクリーン印
刷法によりほぼ均一厚みに塗布した。この上に厚み10
0μmのポリイミドフィルム基板(厚み30μm、配線
幅50μm、電極ピッチ100μm)を重ね合わせ、1
50℃、2分間加熱、加圧し、導電接続構造体を作製し
た。Example 8 The conductive fine particles of the present invention (silver spheres having an average particle diameter of 8 μm, an aspect ratio of 1.17 and a CV value of 20%) were mixed and dispersed in an epoxy resin to prepare an anisotropic conductive paste. This was applied to a glass-epoxy copper-clad substrate (thickness: 1.6 mm, wiring width: 50 μm, electrode pitch: 100 μm) to a substantially uniform thickness by a screen printing method. A thickness of 10
A polyimide film substrate of 0 μm (thickness 30 μm, wiring width 50 μm, electrode pitch 100 μm) is overlapped and
Heating and pressurization were performed at 50 ° C. for 2 minutes to produce a conductive connection structure.
【0048】この導電接続構造体の接続抵抗値は0.0
06Ωと充分低く、隣接する電極間の接続抵抗は1×1
09 以上で線間絶縁性は充分保たれていた。また、異方
性導電ペースト中の導電性微粒子の濃度を上げていった
ところ、濃度が40%まで電極間のリークが発生しなか
った。The connection resistance value of this conductive connection structure is 0.0
06Ω, which is sufficiently low, and the connection resistance between adjacent electrodes is 1 × 1
With a value of 09 or more, the line insulation was sufficiently maintained. In addition, when the concentration of the conductive fine particles in the anisotropic conductive paste was increased, no leakage occurred between the electrodes up to a concentration of 40%.
【0049】比較例1 アスペクト比1.2、CV値42%の銀球を用いたこと
以外は実施例1と同様にテストしたところ、この導電接
続構造体の接続抵抗値は0.03Ωと本発明のものに比
べて劣っており、隣接する電極間の接続抵抗は1×10
9 以上で線間絶縁性は充分保たれていたものの、異方性
導電膜中の導電性微粒子の濃度を上げていったところ、
濃度が30%で電極間のリークが発生した。Comparative Example 1 A test was conducted in the same manner as in Example 1 except that a silver sphere having an aspect ratio of 1.2 and a CV value of 42% was used. The connection resistance value of this conductive connection structure was 0.03 Ω. Inferior to that of the invention, the connection resistance between adjacent electrodes is 1 × 10
Although the line insulation was sufficiently maintained at 9 or more, when the concentration of the conductive fine particles in the anisotropic conductive film was increased,
Leakage between the electrodes occurred at a concentration of 30%.
【0050】比較例2 アスペクト比1.6、CV値30%の銀球を用いたこと
以外は実施例1と同様にテストしたところ、この導電接
続構造体の接続抵抗値は0.02Ωと本発明のものに比
べて劣っており、隣接する電極間の接続抵抗は1×10
9 以上で線間絶縁性は充分保たれていたものの、異方性
導電膜中の導電性微粒子の濃度を上げていったところ、
濃度が30%で電極間のリークが発生した。Comparative Example 2 A test was conducted in the same manner as in Example 1 except that a silver sphere having an aspect ratio of 1.6 and a CV value of 30% was used. The connection resistance value of this conductive connection structure was 0.02 Ω. Inferior to that of the invention, the connection resistance between adjacent electrodes is 1 × 10
Although the line insulation was sufficiently maintained at 9 or more, when the concentration of the conductive fine particles in the anisotropic conductive film was increased,
Leakage between the electrodes occurred at a concentration of 30%.
【0051】比較例3 アスペクト比1.2、CV値45%の銀球を用いたこと
以外は実施例5と同様にテストしたところ、この導電接
続構造体の接続抵抗値は0.02Ωと本発明のものに比
べて劣っており、隣接する電極間の接続抵抗は1×10
9 以上で線間絶縁性は充分保たれていたものの、異方性
導電膜中の導電性微粒子の濃度を上げていったところ、
濃度が25%で電極間のリークが発生した。Comparative Example 3 A test was conducted in the same manner as in Example 5 except that a silver sphere having an aspect ratio of 1.2 and a CV value of 45% was used. The connection resistance value of this conductive connection structure was 0.02Ω. Inferior to that of the invention, the connection resistance between adjacent electrodes is 1 × 10
Although the line insulation was sufficiently maintained at 9 or more, when the concentration of the conductive fine particles in the anisotropic conductive film was increased,
Leakage between the electrodes occurred at a concentration of 25%.
【0052】比較例4 アスペクト比1.05、CV値8%の架橋ポリスチレン
重合体に金メッキした球を用いたこと以外は実施例1と
同様にテストしたところ、この導電接続構造体の接続抵
抗値は0.02Ωと充分低く、隣接する電極間の接続抵
抗は1×109以上で線間絶縁性は充分保たれていたも
のの、異方性導電膜中の導電性微粒子の濃度を上げてい
ったところ、濃度が25%で電極間のリークが発生し
た。Comparative Example 4 A test was conducted in the same manner as in Example 1 except that a sphere plated with gold on a crosslinked polystyrene polymer having an aspect ratio of 1.05 and a CV value of 8% was used. Is sufficiently low as 0.02 Ω, the connection resistance between adjacent electrodes is 1 × 10 9 or more, and the line insulation is sufficiently maintained, but the concentration of the conductive fine particles in the anisotropic conductive film is increased. As a result, leakage between the electrodes occurred at a concentration of 25%.
【0053】比較例5 平均粒径200μm、アスペクト比1.05、CV値8
%の銀球を用いたこと以外は実施例1と同様にテストを
行おうとしたところ、バインダー溶液の段階で粒子が沈
降してしまい、うまく異方性導電膜を作製することがで
きなかった。Comparative Example 5 Average particle size 200 μm, aspect ratio 1.05, CV value 8
When a test was conducted in the same manner as in Example 1 except that the silver spheres were used, particles were settled at the stage of the binder solution, and an anisotropic conductive film could not be produced successfully.
【0054】比較例6 0.2μm以下の銀粉を用いたこと以外は実施例1と同
様にテストを行おうとしたところ、銀粉の濃度を高くし
ても接続不良を起こす部分が発生するため、うまくテス
トすることができなかった。実施例1〜8、比較例1〜
6の結果を表1に示した。Comparative Example 6 A test was conducted in the same manner as in Example 1 except that silver powder having a particle size of 0.2 μm or less was used. Could not test. Examples 1 to 8, Comparative Examples 1 to
Table 1 shows the results of No. 6.
【0055】[0055]
【表1】 [Table 1]
【0056】実施例9 化学的還元法により得られた、平均粒径8μm、アスペ
クト比1.2、CV値42%の銅球を水中に0.1%濃
度で分散させ、落下速度による分級を繰り返し行うこと
により、本発明の導電性微粒子(平均粒径8μm、アス
ペクト比1.2、CV値30%の銀球)を得た。この導
電性微粒子をエポキシ樹脂及びアクリル樹脂の混合物を
トルエンに溶解させたバインダー溶液に混合、分散させ
た。次いで、導電性微粒子分散溶液を離型フィルム上に
一定厚みに塗布し、トルエンを蒸発させ、異方性導電膜
を作製した。膜厚は30μmであり、導電性微粒子は1
5%の濃度であった。Example 9 Copper spheres obtained by a chemical reduction method and having an average particle size of 8 μm, an aspect ratio of 1.2 and a CV value of 42% were dispersed at a concentration of 0.1% in water. By repeating the process, conductive fine particles of the present invention (silver spheres having an average particle diameter of 8 μm, an aspect ratio of 1.2, and a CV value of 30%) were obtained. The conductive fine particles were mixed and dispersed in a binder solution obtained by dissolving a mixture of an epoxy resin and an acrylic resin in toluene. Next, the conductive fine particle dispersion solution was applied on the release film to a constant thickness, and toluene was evaporated to prepare an anisotropic conductive film. The thickness is 30 μm, and the conductive fine particles are 1 μm.
The concentration was 5%.
【0057】ガラス−エポキシ銅張り基板(厚み1.6
mm、配線幅50μm、電極ピッチ100μm)に得ら
れた異方性導電膜を貼付けた。この上に厚み100μm
のポリイミドフィルム基板(厚み30μm、配線幅50
μm、電極ピッチ100μm)を重ね合わせ、150
℃、2分間加熱、加圧し、導電接続構造体を作製した。Glass-epoxy copper-clad substrate (thickness 1.6)
mm, a wiring width of 50 μm, and an electrode pitch of 100 μm). 100μm thick on this
Polyimide film substrate (thickness 30 μm, wiring width 50
μm, electrode pitch 100 μm)
The mixture was heated and pressurized at 2 ° C. for 2 minutes to produce a conductive connection structure.
【0058】この導電接続構造体の接続抵抗値は0.0
1Ωと充分低く、隣接する電極間の接続抵抗は1×10
9 以上で線間絶縁性は充分保たれていた。また、通常、
異方性導電膜中の導電性微粒子の濃度を上げると電気抵
抗を下げることができるため、導電性微粒子の濃度を上
げていったところ、濃度が35%まで電極間のリークが
発生しなかった。The connection resistance value of this conductive connection structure is 0.0
1Ω, low enough, connection resistance between adjacent electrodes is 1 × 10
With 9 or more, the line insulation was sufficiently maintained. Also, usually
When the concentration of the conductive fine particles in the anisotropic conductive film is increased, the electric resistance can be reduced. Therefore, when the concentration of the conductive fine particles was increased, no leakage occurred between the electrodes up to a concentration of 35%. .
【0059】実施例10 アスペクト比1.17、CV値18%の銅球を用いたこ
と以外は実施例9と同様にテストしたところ、この導電
接続構造体の接続抵抗値は0.006Ωと充分低く、隣
接する電極間の接続抵抗は1×109 以上で線間絶縁性
は充分保たれていた。また、異方性導電膜中の導電性微
粒子の濃度を上げていったところ、濃度が40%まで電
極間のリークが発生しなかった。Example 10 A test was performed in the same manner as in Example 9 except that a copper ball having an aspect ratio of 1.17 and a CV value of 18% was used. The connection resistance value of this conductive connection structure was sufficiently 0.006Ω. The connection resistance between adjacent electrodes was 1 × 10 9 or more, and the line insulation was sufficiently maintained. In addition, when the concentration of the conductive fine particles in the anisotropic conductive film was increased, no leakage occurred between the electrodes until the concentration reached 40%.
【0060】実施例11 アスペクト比1.13、CV値13%の銅球を用いたこ
と以外は実施例9と同様にテストしたところ、この導電
接続構造体の接続抵抗値は0.004Ωと充分低く、隣
接する電極間の接続抵抗は1×109 以上で線間絶縁性
は充分保たれていた。また、異方性導電膜中の導電性微
粒子の濃度を上げていったところ、濃度が50%まで電
極間のリークが発生しなかった。Example 11 A test was conducted in the same manner as in Example 9 except that a copper ball having an aspect ratio of 1.13 and a CV value of 13% was used. The connection resistance value of this conductive connection structure was sufficiently 0.004Ω. The connection resistance between adjacent electrodes was 1 × 10 9 or more, and the line insulation was sufficiently maintained. When the concentration of the conductive fine particles in the anisotropic conductive film was increased, no leakage occurred between the electrodes until the concentration reached 50%.
【0061】実施例12 アスペクト比1.05、CV値8%の銅球を用いたこと
以外は実施例9と同様にテストしたところ、この導電接
続構造体の接続抵抗値は0.002Ωと充分低く、隣接
する電極間の接続抵抗は1×109 以上で線間絶縁性は
充分保たれていた。また、異方性導電膜中の導電性微粒
子の濃度を上げていったところ、濃度が60%まで電極
間のリークが発生しなかった。Example 12 A test was conducted in the same manner as in Example 9 except that a copper ball having an aspect ratio of 1.05 and a CV value of 8% was used. The connection resistance value of this conductive connection structure was sufficiently 0.002Ω. The connection resistance between adjacent electrodes was 1 × 10 9 or more, and the line insulation was sufficiently maintained. When the concentration of the conductive fine particles in the anisotropic conductive film was increased, no leakage occurred between the electrodes until the concentration reached 60%.
【0062】実施例13 平均粒径4μmの銅球を用いたこと以外は実施例10と
同様にテストしたところ、この導電接続構造体の接続抵
抗値は0.006Ωと充分低く、隣接する電極間の接続
抵抗は1×109 以上で線間絶縁性は充分保たれてい
た。また、異方性導電膜中の導電性微粒子の濃度を上げ
ていったところ、濃度が35%まで電極間のリークが発
生しなかった。Example 13 A test was conducted in the same manner as in Example 10 except that a copper ball having an average particle size of 4 μm was used. As a result, the connection resistance value of this conductive connection structure was sufficiently low at 0.006Ω, and the distance between adjacent electrodes was small. Had a connection resistance of 1 × 10 9 or more, and the line insulation was sufficiently maintained. In addition, when the concentration of the conductive fine particles in the anisotropic conductive film was increased, no leakage occurred between the electrodes up to a concentration of 35%.
【0063】実施例14 銅球に0.4μmの銅粒子をハイブリタイザーを用いて
打ち込み、表面に突起をもたせたこと以外は実施例10
と同様にテストしたところ、この導電接続構造体の接続
抵抗値は0.004Ωと充分低く、隣接する電極間の接
続抵抗は1×109 以上で線間絶縁性は充分保たれてい
た。また、異方性導電膜中の導電性微粒子の濃度を上げ
ていったところ、濃度が40%まで電極間のリークが発
生しなかった。Example 14 Example 10 was repeated except that 0.4 μm copper particles were shot into copper spheres using a hybridizer to provide projections on the surface.
As a result of the test, the connection resistance value of this conductive connection structure was sufficiently low at 0.004Ω, the connection resistance between adjacent electrodes was 1 × 10 9 or more, and the line insulation was sufficiently maintained. In addition, when the concentration of the conductive fine particles in the anisotropic conductive film was increased, no leakage occurred between the electrodes until the concentration reached 40%.
【0064】実施例15 銅球に1μmの熱可塑性ビニル系共重合樹脂をコーティ
ングしたこと以外は実施例10と同様にテストしたとこ
ろ、この導電接続構造体の接続抵抗値は0.006Ωと
充分低く、隣接する電極間の接続抵抗は1×109 以上
で線間絶縁性は充分保たれていた。また、異方性導電膜
中の導電性微粒子の濃度を上げていったところ、濃度が
60%まで電極間のリークが発生しなかった。Example 15 A test was conducted in the same manner as in Example 10 except that a copper ball was coated with a thermoplastic vinyl copolymer resin of 1 μm. The connection resistance value of this conductive connection structure was sufficiently low at 0.006Ω. The connection resistance between adjacent electrodes was 1 × 10 9 or more, and the line insulation was sufficiently maintained. When the concentration of the conductive fine particles in the anisotropic conductive film was increased, no leakage occurred between the electrodes until the concentration reached 60%.
【0065】実施例16 本発明の導電性微粒子(平均粒径8μm、アスペクト比
1.17、CV値20%の銅球)をエポキシ樹脂に混
合、分散させ、異方性導電ペーストを作製した。これ
を、ガラス−エポキシ銅張り基板(厚み1.6mm、配
線幅50μm、電極ピッチ100μm)にスクリーン印
刷法によりほぼ均一厚みに塗布した。この上に厚み10
0μmのポリイミドフィルム基板(厚み30μm、配線
幅50μm、電極ピッチ100μm)を重ね合わせ、1
50℃、2分間加熱、加圧し、導電接続構造体を作製し
た。Example 16 Anisotropic conductive paste was prepared by mixing and dispersing conductive fine particles of the present invention (copper spheres having an average particle diameter of 8 μm, an aspect ratio of 1.17 and a CV value of 20%) in an epoxy resin. This was applied to a glass-epoxy copper-clad substrate (thickness: 1.6 mm, wiring width: 50 μm, electrode pitch: 100 μm) to a substantially uniform thickness by a screen printing method. A thickness of 10
A polyimide film substrate of 0 μm (thickness 30 μm, wiring width 50 μm, electrode pitch 100 μm) is overlapped and
Heating and pressurization were performed at 50 ° C. for 2 minutes to produce a conductive connection structure.
【0066】この導電接続構造体の接続抵抗値は0.0
06Ωと充分低く、隣接する電極間の接続抵抗は1×1
09 以上で線間絶縁性は充分保たれていた。また、異方
性導電ペースト中の導電性微粒子の濃度を上げていった
ところ、濃度が40%まで電極間のリークが発生しなか
った。The connection resistance value of this conductive connection structure is 0.0
06Ω, which is sufficiently low, and the connection resistance between adjacent electrodes is 1 × 1
With a value of 09 or more, the line insulation was sufficiently maintained. In addition, when the concentration of the conductive fine particles in the anisotropic conductive paste was increased, no leakage occurred between the electrodes up to a concentration of 40%.
【0067】比較例7 アスペクト比1.2、CV値42%の銅球を用いたこと
以外は実施例9と同様にテストしたところ、この導電接
続構造体の接続抵抗値は0.03Ωと本発明のものに比
べて劣っており、隣接する電極間の接続抵抗は1×10
9 以上で線間絶縁性は充分保たれていたものの、異方性
導電膜中の導電性微粒子の濃度を上げていったところ、
濃度が30%で電極間のリークが発生した。Comparative Example 7 A test was performed in the same manner as in Example 9 except that a copper ball having an aspect ratio of 1.2 and a CV value of 42% was used. The connection resistance value of this conductive connection structure was 0.03 Ω. Inferior to that of the invention, the connection resistance between adjacent electrodes is 1 × 10
Although the line insulation was sufficiently maintained at 9 or more, when the concentration of the conductive fine particles in the anisotropic conductive film was increased,
Leakage between the electrodes occurred at a concentration of 30%.
【0068】比較例8 アスペクト比1.6、CV値30%の銅球を用いたこと
以外は実施例9と同様にテストしたところ、この導電接
続構造体の接続抵抗値は0.02Ωと本発明のものに比
べて劣っており、隣接する電極間の接続抵抗は1×10
9 以上で線間絶縁性は充分保たれていたものの、異方性
導電膜中の導電性微粒子の濃度を上げていったところ、
濃度が30%で電極間のリークが発生した。Comparative Example 8 A test was conducted in the same manner as in Example 9 except that a copper ball having an aspect ratio of 1.6 and a CV value of 30% was used. The connection resistance value of this conductive connection structure was 0.02 Ω. Inferior to that of the invention, the connection resistance between adjacent electrodes is 1 × 10
Although the line insulation was sufficiently maintained at 9 or more, when the concentration of the conductive fine particles in the anisotropic conductive film was increased,
Leakage between the electrodes occurred at a concentration of 30%.
【0069】比較例9 アスペクト比1.2、CV値45%の銅球を用いたこと
以外は実施例13と同様にテストしたところ、この導電
接続構造体の接続抵抗値は0.02Ωと本発明のものに
比べて劣っており、隣接する電極間の接続抵抗は1×1
09 以上で線間絶縁性は充分保たれていたものの、異方
性導電膜中の導電性微粒子の濃度を上げていったとこ
ろ、濃度が25%で電極間のリークが発生した。Comparative Example 9 A test was conducted in the same manner as in Example 13 except that a copper ball having an aspect ratio of 1.2 and a CV value of 45% was used. The connection resistance value of this conductive connection structure was 0.02 Ω. Inferior to that of the invention, the connection resistance between adjacent electrodes is 1 × 1
Although the line insulating property was sufficiently maintained at a value of 09 or more, when the concentration of the conductive fine particles in the anisotropic conductive film was increased, a leakage between the electrodes occurred at a concentration of 25%.
【0070】比較例10 平均粒径200μm、アスペクト比1.05、CV値8
%の銅球を用いたこと以外は実施例9と同様にテストを
行おうとしたところ、バインダー溶液の段階で粒子が沈
降してしまい、うまく異方性導電膜を作製することがで
きなかった。Comparative Example 10 Average particle size 200 μm, aspect ratio 1.05, CV value 8
When a test was conducted in the same manner as in Example 9 except that the copper ball was used in the same manner as in Example 9, particles settled at the stage of the binder solution, and an anisotropic conductive film could not be produced successfully.
【0071】比較例11 0.2μm以下の銅粉を用いたこと以外は実施例9と同
様にテストを行おうとしたところ、銅粉の濃度を高くし
ても接続不良を起こす部分が発生するため、うまくテス
トすることができなかった。実施例9〜16、比較例7
〜11の結果を表2に示した。Comparative Example 11 A test was conducted in the same manner as in Example 9 except that copper powder having a size of 0.2 μm or less was used. , Could not test well. Examples 9 to 16, Comparative Example 7
Table 2 shows the results of Nos. To 11.
【0072】[0072]
【表2】 [Table 2]
【0073】実施例17 平均粒径8μm、アスペクト比1.2、CV値42%の
ニッケル球を水中に0.1%濃度で分散させ、落下速度
による分級を繰り返し行うことにより、本発明の導電性
微粒子(平均粒径8μm、アスペクト比1.2、CV値
30%の銀球)を得た。この導電性微粒子をエポキシ樹
脂及びアクリル樹脂の混合物をトルエンに溶解させたバ
インダー溶液に混合、分散させた。次いで、導電性微粒
子分散溶液を離型フィルム上に一定厚みに塗布し、トル
エンを蒸発させ、異方性導電膜を作製した。膜厚は30
μmであり、導電性微粒子は15%の濃度であった。Example 17 A nickel sphere having an average particle diameter of 8 μm, an aspect ratio of 1.2 and a CV value of 42% was dispersed in water at a concentration of 0.1%, and classification by drop speed was repeatedly performed to obtain a conductive material of the present invention. Functional fine particles (silver spheres having an average particle size of 8 μm, an aspect ratio of 1.2, and a CV value of 30%) were obtained. The conductive fine particles were mixed and dispersed in a binder solution obtained by dissolving a mixture of an epoxy resin and an acrylic resin in toluene. Next, the conductive fine particle dispersion solution was applied on the release film to a constant thickness, and toluene was evaporated to prepare an anisotropic conductive film. The film thickness is 30
μm, and the concentration of the conductive fine particles was 15%.
【0074】ガラス−エポキシ銅張り基板(厚み1.6
mm、配線幅50μm、電極ピッチ100μm)に得ら
れた異方性導電膜を貼付けた。この上に厚み100μm
のポリイミドフィルム基板(厚み30μm、配線幅50
μm、電極ピッチ100μm)を重ね合わせ、150
℃、2分間加熱、加圧し、導電接続構造体を作製した。Glass-epoxy copper-clad substrate (thickness 1.6)
mm, a wiring width of 50 μm, and an electrode pitch of 100 μm). 100μm thick on this
Polyimide film substrate (thickness 30 μm, wiring width 50
μm, electrode pitch 100 μm)
The mixture was heated and pressurized at 2 ° C. for 2 minutes to produce a conductive connection structure.
【0075】この導電接続構造体の接続抵抗値は0.0
15Ωと充分低く、隣接する電極間の接続抵抗は1×1
09 以上で線間絶縁性は充分保たれていた。また、通
常、異方性導電膜中の導電性微粒子の濃度を上げると電
気抵抗を下げることができるため、導電性微粒子の濃度
を上げていったところ、濃度が40%まで電極間のリー
クが発生しなかった。The connection resistance value of this conductive connection structure is 0.0
15Ω sufficiently low, connection resistance between adjacent electrodes is 1 × 1
With a value of 09 or more, the line insulation was sufficiently maintained. In general, when the concentration of the conductive fine particles in the anisotropic conductive film is increased, the electric resistance can be reduced. Therefore, when the concentration of the conductive fine particles is increased, the leakage between the electrodes is reduced to 40%. Did not occur.
【0076】実施例18 アスペクト比1.17、CV値18%のニッケル球を用
いたこと以外は実施例17と同様にテストしたところ、
この導電接続構造体の接続抵抗値は0.009Ωと充分
低く、隣接する電極間の接続抵抗は1×109 以上で線
間絶縁性は充分保たれていた。また、異方性導電膜中の
導電性微粒子の濃度を上げていったところ、濃度が45
%まで電極間のリークが発生しなかった。Example 18 A test was conducted in the same manner as in Example 17 except that nickel balls having an aspect ratio of 1.17 and a CV value of 18% were used.
The connection resistance value of this conductive connection structure was sufficiently low at 0.009Ω, the connection resistance between adjacent electrodes was 1 × 10 9 or more, and the line insulation was sufficiently maintained. Further, when the concentration of the conductive fine particles in the anisotropic conductive film was increased, the concentration became 45%.
%, No leak between the electrodes occurred.
【0077】実施例19 アスペクト比1.13、CV値13%のニッケル球を用
いたこと以外は実施例17と同様にテストしたところ、
この導電接続構造体の接続抵抗値は0.006Ωと充分
低く、隣接する電極間の接続抵抗は1×109 以上で線
間絶縁性は充分保たれていた。また、異方性導電膜中の
導電性微粒子の濃度を上げていったところ、濃度が55
%まで電極間のリークが発生しなかった。Example 19 A test was conducted in the same manner as in Example 17 except that nickel balls having an aspect ratio of 1.13 and a CV value of 13% were used.
The connection resistance value of this conductive connection structure was sufficiently low at 0.006Ω, the connection resistance between adjacent electrodes was 1 × 10 9 or more, and the line insulation was sufficiently maintained. When the concentration of the conductive fine particles in the anisotropic conductive film was increased, the concentration was 55%.
%, No leak between the electrodes occurred.
【0078】実施例20 アスペクト比1.05、CV値8%のニッケル球を用い
たこと以外は実施例17と同様にテストしたところ、こ
の導電接続構造体の接続抵抗値は0.003Ωと充分低
く、隣接する電極間の接続抵抗は1×109 以上で線間
絶縁性は充分保たれていた。また、異方性導電膜中の導
電性微粒子の濃度を上げていったところ、濃度が65%
まで電極間のリークが発生しなかった。Example 20 A test was conducted in the same manner as in Example 17 except that nickel balls having an aspect ratio of 1.05 and a CV value of 8% were used. The connection resistance value of this conductive connection structure was sufficiently 0.003Ω. The connection resistance between adjacent electrodes was 1 × 10 9 or more, and the line insulation was sufficiently maintained. When the concentration of the conductive fine particles in the anisotropic conductive film was increased, the concentration was 65%.
No leak occurred between the electrodes.
【0079】実施例21 平均粒径4μmのニッケル球を用いたこと以外は実施例
18と同様にテストしたところ、この導電接続構造体の
接続抵抗値は0.007Ωと充分低く、隣接する電極間
の接続抵抗は1×109 以上で線間絶縁性は充分保たれ
ていた。また、異方性導電膜中の導電性微粒子の濃度を
上げていったところ、濃度が40%まで電極間のリーク
が発生しなかった。Example 21 A test was conducted in the same manner as in Example 18 except that a nickel sphere having an average particle size of 4 μm was used. As a result, the connection resistance value of this conductive connection structure was sufficiently low at 0.007Ω, and the connection between adjacent electrodes Had a connection resistance of 1 × 10 9 or more, and the line insulation was sufficiently maintained. In addition, when the concentration of the conductive fine particles in the anisotropic conductive film was increased, no leakage occurred between the electrodes until the concentration reached 40%.
【0080】実施例22 ニッケル球に0.4μmのニッケル粒子をハイブリタイ
ザーを用いて打ち込み、表面に突起をもたせたこと以外
は実施例18と同様にテストしたところ、この導電接続
構造体の接続抵抗値は0.007Ωと充分低く、隣接す
る電極間の接続抵抗は1×109 以上で線間絶縁性は充
分保たれていた。また、異方性導電膜中の導電性微粒子
の濃度を上げていったところ、濃度が40%まで電極間
のリークが発生しなかった。Example 22 A test was conducted in the same manner as in Example 18 except that 0.4 μm nickel particles were bombarded into nickel spheres using a hybridizer and projections were provided on the surface. The connection resistance of the conductive connection structure was measured. The value was as low as 0.007Ω, the connection resistance between adjacent electrodes was 1 × 10 9 or more, and the line insulation was sufficiently maintained. In addition, when the concentration of the conductive fine particles in the anisotropic conductive film was increased, no leakage occurred between the electrodes until the concentration reached 40%.
【0081】実施例23 ニッケル球に1μmの熱可塑性ビニル系共重合樹脂をコ
ーティングしたこと以外は実施例18と同様にテストし
たところ、この導電接続構造体の接続抵抗値は0.00
9Ωと充分低く、隣接する電極間の接続抵抗は1×10
9 以上で線間絶縁性は充分保たれていた。また、異方性
導電膜中の導電性微粒子の濃度を上げていったところ、
濃度が60%まで電極間のリークが発生しなかった。Example 23 A test was conducted in the same manner as in Example 18 except that a nickel sphere was coated with a 1 μm thermoplastic vinyl copolymer resin. The connection resistance value of this conductive connection structure was 0.00
9Ω sufficiently low, connection resistance between adjacent electrodes is 1 × 10
With 9 or more, the line insulation was sufficiently maintained. Also, when the concentration of the conductive fine particles in the anisotropic conductive film was increased,
Leakage between the electrodes did not occur up to a concentration of 60%.
【0082】実施例24 本発明の導電性微粒子(平均粒径8μm、アスペクト比
1.17、CV値20%のニッケル球)をエポキシ樹脂
に混合、分散させ、異方性導電ペーストを作製した。こ
れを、ガラス−エポキシ銅張り基板(厚み1.6mm、
配線幅50μm、電極ピッチ100μm)にスクリーン
印刷法によりほぼ均一厚みに塗布した。この上に厚み1
00μmのポリイミドフィルム基板(厚み30μm、配
線幅50μm、電極ピッチ100μm)を重ね合わせ、
150℃、2分間加熱、加圧し、導電接続構造体を作製
した。Example 24 The conductive fine particles of the present invention (nickel spheres having an average particle diameter of 8 μm, an aspect ratio of 1.17 and a CV value of 20%) were mixed and dispersed in an epoxy resin to prepare an anisotropic conductive paste. A glass-epoxy copper-clad substrate (thickness 1.6 mm,
(Wiring width 50 μm, electrode pitch 100 μm) was applied to a substantially uniform thickness by a screen printing method. Thickness 1 on this
A polyimide film substrate of 00 μm (thickness 30 μm, wiring width 50 μm, electrode pitch 100 μm) is overlapped,
Heating and pressurization were performed at 150 ° C. for 2 minutes to produce a conductive connection structure.
【0083】この導電接続構造体の接続抵抗値は0.0
09Ωと充分低く、隣接する電極間の接続抵抗は1×1
09 以上で線間絶縁性は充分保たれていた。また、異方
性導電ペースト中の導電性微粒子の濃度を上げていった
ところ、濃度が45%まで電極間のリークが発生しなか
った。The connection resistance value of this conductive connection structure is 0.0
09 Ω, which is sufficiently low, and the connection resistance between adjacent electrodes is 1 × 1
With a value of 09 or more, the line insulation was sufficiently maintained. When the concentration of the conductive fine particles in the anisotropic conductive paste was increased, no leakage occurred between the electrodes until the concentration reached 45%.
【0084】比較例12 アスペクト比1.2、CV値42%のニッケル球(IN
CO社製、ニッケルパウダー4SP)を用いたこと以外
は実施例17と同様にテストしたところ、この導電接続
構造体の接続抵抗値は0.04Ωと本発明のものに比べ
て劣っており、隣接する電極間の接続抵抗は1×109
以上で線間絶縁性は充分保たれていたものの、異方性導
電膜中の導電性微粒子の濃度を上げていったところ、濃
度が35%で電極間のリークが発生した。Comparative Example 12 Nickel spheres having an aspect ratio of 1.2 and a CV value of 42% (IN
A test was performed in the same manner as in Example 17 except that nickel powder 4SP manufactured by CO Co., Ltd. was used. The connection resistance value of this conductive connection structure was 0.04Ω, which was inferior to that of the present invention. The connection resistance between the electrodes is 1 × 10 9
As described above, although the line insulation was sufficiently maintained, when the concentration of the conductive fine particles in the anisotropic conductive film was increased, a leak occurred between the electrodes at a concentration of 35%.
【0085】比較例13 アスペクト比1.6、CV値30%のニッケル球を用い
たこと以外は実施例17と同様にテストしたところ、こ
の導電接続構造体の接続抵抗値は0.03Ωと本発明の
ものに比べて劣っており、隣接する電極間の接続抵抗は
1×109 以上で線間絶縁性は充分保たれていたもの
の、異方性導電膜中の導電性微粒子の濃度を上げていっ
たところ、濃度が35%で電極間のリークが発生した。Comparative Example 13 A test was conducted in the same manner as in Example 17 except that a nickel sphere having an aspect ratio of 1.6 and a CV value of 30% was used. The connection resistance value of this conductive connection structure was 0.03 Ω. Inferior to that of the invention, the connection resistance between adjacent electrodes was 1 × 10 9 or more, and the line insulation was sufficiently maintained, but the concentration of the conductive fine particles in the anisotropic conductive film was increased. Then, when the concentration was 35%, a leak occurred between the electrodes.
【0086】比較例14 アスペクト比1.5、CV値40%のニッケル球(IN
CO社製、Ni♯123)を用いたこと以外は実施例2
1と同様にテストしたところ、この導電接続構造体の接
続抵抗値は0.03Ωと本発明のものに比べて劣ってお
り、隣接する電極間の接続抵抗は1×109 以上で線間
絶縁性は充分保たれていたものの、異方性導電膜中の導
電性微粒子の濃度を上げていったところ、濃度が30%
で電極間のリークが発生した。Comparative Example 14 Nickel spheres having an aspect ratio of 1.5 and a CV value of 40% (IN
Example 2 except that Ni♯123 manufactured by CO Co. was used.
When the test was conducted in the same manner as in Example 1, the connection resistance value of this conductive connection structure was 0.03Ω, which was inferior to that of the present invention, and the connection resistance between adjacent electrodes was 1 × 10 9 or more, and the line insulation was Although the properties were sufficiently maintained, the concentration of the conductive fine particles in the anisotropic conductive film was increased to 30%.
Caused a leak between the electrodes.
【0087】比較例15 平均粒径30μm、アスペクト比1.05、CV値8%
のニッケル球を用いたこと以外は実施例17と同様にテ
ストを行おうとしたところ、バインダー溶液の段階で粒
子が沈降してしまい、うまく異方性導電膜を作製するこ
とができなかった。Comparative Example 15 Average particle size 30 μm, aspect ratio 1.05, CV value 8%
When a test was conducted in the same manner as in Example 17 except that the nickel sphere was used, particles settled out at the stage of the binder solution, and an anisotropic conductive film could not be produced successfully.
【0088】比較例16 0.2μm以下のニッケル粉を用いたこと以外は実施例
17と同様にテストを行おうとしたところ、ニッケル粉
の濃度を高くしても接続不良を起こす部分が発生するた
め、うまくテストすることができなかった。実施例17
〜24、比較例12〜16の結果を表3に示した。Comparative Example 16 A test was conducted in the same manner as in Example 17 except that nickel powder having a size of 0.2 μm or less was used. , Could not test well. Example 17
To 24 and Comparative Examples 12 to 16 are shown in Table 3.
【0089】[0089]
【表3】 [Table 3]
【0090】[0090]
【発明の効果】本発明は、上述の構成からなるので、接
続抵抗が低く、接続時の電流容量が大きく、接続が安定
していてリーク現象を起こさない導電性微粒子、異方性
導電接着剤及び導電接続構造体を提供することができ
る。According to the present invention, since it has the above-described structure, the connection resistance is low, the current capacity at the time of connection is large, the connection is stable, the conductive fine particles do not cause a leak phenomenon, and the anisotropic conductive adhesive. And a conductive connection structure.
Claims (10)
て、前記金属球は、平均粒径0.3〜25μm、アスペ
クト比1.5未満、CV値40%以下のものであること
を特徴とする導電性微粒子。1. A conductive fine particle having a metal sphere as a nucleus, wherein said metal sphere has an average particle diameter of 0.3 to 25 μm, an aspect ratio of less than 1.5, and a CV value of 40% or less. Characteristic conductive fine particles.
る請求項1記載の導電性微粒子。2. The conductive fine particles according to claim 1, wherein the metal sphere has a CV value of 20% or less.
のである請求項1又は2記載の導電性微粒子。3. The conductive fine particles according to claim 1, wherein the metal sphere has an aspect ratio of less than 1.2.
る請求項1、2又は3記載の導電性微粒子。4. The conductive fine particles according to claim 1, wherein the metal sphere has a CV value of 15% or less.
項1、2、3又は4記載の導電性微粒子。5. The conductive fine particles according to claim 1, wherein the metal sphere has a projection.
ある請求項1、2、3、4又は5記載の導電性微粒子。6. The conductive fine particles according to claim 1, wherein the metal sphere is coated with a resin.
なるものである請求項1、2、3、4、5又は6記載の
導電性微粒子。7. The conductive fine particles according to claim 1, wherein the metal sphere is made of silver, copper, or nickel.
れた銅からなるものである請求項7記載の導電性微粒
子。8. The conductive fine particles according to claim 7, wherein the metal sphere is made of copper produced by a chemical reduction method.
8記載の導電性微粒子と絶縁性樹脂とからなることを特
徴とする異方性導電接着剤。9. An anisotropic conductive adhesive comprising the conductive fine particles according to claim 1, 2, 3, or 8, and an insulating resin.
は8記載の導電性微粒子を用いてなることを特徴とする
導電接続構造体。10. A conductive connection structure comprising the conductive fine particles according to claim 1, 2, 3, 4, 5, 6, 7, or 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29742397A JPH11134935A (en) | 1997-10-29 | 1997-10-29 | Conductive fine particles, anisotropic conductive adhesive and conductive connection structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29742397A JPH11134935A (en) | 1997-10-29 | 1997-10-29 | Conductive fine particles, anisotropic conductive adhesive and conductive connection structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11134935A true JPH11134935A (en) | 1999-05-21 |
Family
ID=17846326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29742397A Pending JPH11134935A (en) | 1997-10-29 | 1997-10-29 | Conductive fine particles, anisotropic conductive adhesive and conductive connection structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11134935A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003075409A1 (en) * | 2002-03-04 | 2003-09-12 | Sumitomo Electric Industries, Ltd. | Anisotropic conductive film and method for producing the same |
| JP2007080635A (en) * | 2005-09-13 | 2007-03-29 | Toda Kogyo Corp | Particle for production of conductive component |
| JP2011068913A (en) * | 2010-12-24 | 2011-04-07 | Sony Chemical & Information Device Corp | Anisotropic conductive adhesive film, connection structure and method of producing the same |
-
1997
- 1997-10-29 JP JP29742397A patent/JPH11134935A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003075409A1 (en) * | 2002-03-04 | 2003-09-12 | Sumitomo Electric Industries, Ltd. | Anisotropic conductive film and method for producing the same |
| US7390442B2 (en) | 2002-03-04 | 2008-06-24 | Sumitomo Electric Industries, Ltd. | Anisotropic conductive film and method for producing the same |
| KR100923183B1 (en) * | 2002-03-04 | 2009-10-22 | 스미토모덴키고교가부시키가이샤 | Anisotropic conductive film and method for producing the same |
| JP2007080635A (en) * | 2005-09-13 | 2007-03-29 | Toda Kogyo Corp | Particle for production of conductive component |
| JP2011068913A (en) * | 2010-12-24 | 2011-04-07 | Sony Chemical & Information Device Corp | Anisotropic conductive adhesive film, connection structure and method of producing the same |
| WO2012086278A1 (en) * | 2010-12-24 | 2012-06-28 | ソニーケミカル&インフォメーションデバイス株式会社 | Anisotropic conductive adhesive film, connection structure and method for manufacturing same |
| CN102668251A (en) * | 2010-12-24 | 2012-09-12 | 索尼化学&信息部件株式会社 | Anisotropic conductive adhesive film, connection structure and method for manufacturing same |
| KR101410185B1 (en) * | 2010-12-24 | 2014-06-19 | 데쿠세리아루즈 가부시키가이샤 | Anisotropic conductive film, connection structure and method of manufacturing the same |
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