JPH11121457A - Method for manufacturing semiconductor device - Google Patents

Abstract

(57) Abstract: A contact area between an insulating film and a metal pad electrode and between a metal pad electrode and a wire by forming irregularities on the surface of the insulating film and the metal pad electrode in a bonding pad region after forming the insulating film. The adhesion between the insulating film and the metal pad electrode and between the metal pad electrode and the wire is improved. SOLUTION: After forming an insulating film 2 on a semiconductor substrate 1, a photoresist 6 is applied as an etching mask to the insulating film 2 to form an etching mask pattern in a bonding pad region. Next, etching is performed through an etching mask pattern made of the photoresist 6 to form irregularities on the surface of the insulating film 2 in the bonding pad region. Further, the metal pad electrode 3 is formed such that the irregularities on the surface of the insulating film 2 are reflected on the surface of the metal pad electrode 3. After that, the protective film 4 is formed, and the wire 5 is connected to the metal pad electrode 4.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device having a bonding pad region necessary for connecting an internal circuit element of a semiconductor device to a wire.

[0002]

2. Description of the Related Art In recent years, semiconductor integrated circuits have been miniaturized, and the area of a bonding pad region for connecting the semiconductor integrated circuit element to a wire has been reduced.

[0003] A conventional method for manufacturing a semiconductor device will be described below. 14 to 17 are process cross-sectional views of a conventional method for manufacturing a semiconductor device. In FIG. 14, a well-known CVD (chemical vapor) is formed on a semiconductor substrate 1.
The insulating film 2 is formed by a deposition method. In FIG. 15, a pattern of a metal pad electrode 4 is formed on the insulating film 2 in the bonding pad region by well-known sputtering, lithography, and etching. Further, FIG.
In 6, a protective film 4 having a bonding window is formed on the metal pad electrode 3. Thereafter, in FIG. 17, the wire 5 is connected to the metal pad electrode 3 through the bonding window.

[0004]

However, in the above-described conventional method for manufacturing a semiconductor device, the contact area between the insulating film 2 and the metal pad electrode 3 and between the metal pad electrode 3 and the wire 5 are small, so that the adhesive property is low. However, there is a disadvantage that peeling occurs at the interface between the insulating film 2 and the metal pad electrode 3 or at the interface between the metal pad electrode 3 and the wire 5 during or after wire bonding.

In view of the above problems, an object of the present invention is to solve the above problems and to provide a method of manufacturing a semiconductor device with improved adhesion between a metal pad electrode and an insulating film and between a metal pad electrode and a wire. It is.

[0006]

In order to achieve this object, a method of manufacturing a semiconductor device according to the present invention comprises forming an insulating film on a semiconductor substrate and then forming irregularities on the surface of the insulating film in a bonding pad region. Forming an etching mask for performing the etching, etching the insulating film in the bonding pad region through the etching mask to form irregularities, and forming an irregular shape in the bonding pad region due to the irregularities of the insulating film. Forming a metal pad electrode pattern.

Further, according to the method of manufacturing a semiconductor of the present invention, after forming an insulating film on a semiconductor substrate, a thin film is formed on the insulating film, and a part of the thin film is formed so as to have unevenness in a bonding pad region. Forming an etching mask with the pattern remaining, etching a thin film in the bonding pad region through the etching mask to form irregularities on the surface of the insulating film, and forming an irregular shape formed of the insulating film and the thin film in the bonding pad region. Forming a metal pad electrode pattern having an uneven surface.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of a method of manufacturing a semiconductor device according to the present invention will be described with reference to sectional views shown in FIGS.

In FIG. 1, a semiconductor substrate 1 and an insulating film 2 are formed in the same manner as in the prior art. In FIG. 2, a photoresist 6 is applied as an etching mask to the insulating film 2 to form an etching mask pattern in the bonding pad region. In FIG. 3, the etching is performed through an etching mask pattern of the photoresist 6 to form irregularities on the surface of the insulating film 2 in the bonding pad region. Further, as shown in FIG. 4, the metal pad electrode 3 is formed such that the irregularities on the surface of the insulating film 2 are reflected on the surface of the metal pad electrode 3. After that, as shown in FIG. 5, the protective film 4 is formed by the same method as the conventional technique, and the wire 5 is connected to the metal pad electrode 4 as shown in FIG.

Next, a second embodiment of the method of manufacturing a semiconductor device according to the present invention will be described with reference to sectional views shown in FIGS.

In FIG. 7, a semiconductor substrate 1 and an insulating film 2 are formed by the same method as in the prior art. In FIG. 8, polysilicon 7 is formed as a thin film on insulating film 2. In FIG. 9, a photoresist 6 is applied as an etching mask on polysilicon, and an etching mask pattern is formed in a bonding pad region. In FIG. 10, the polysilicon 7 is etched on the surface of the insulating film 2 in the bonding pad region by etching the polysilicon 7 through the etching mask pattern of the photoresist 6. Further, as shown in FIG. 11, the metal pad electrode 3 is
Formed to be reflected on the surface. Thereafter, as shown in FIG. 12, a protective film 4 is formed by the same method as the conventional technique, and the wires 5 are connected to the metal pad electrodes 3 as shown in FIG.

In the first and second embodiments, a photoresist is used as an etching mask. However, the present invention is not limited to this. Any material that can prevent etching of an insulating film is used. Similar effects can be obtained. In the second embodiment, the thin film 7 is made of polysilicon, but is not particularly limited as long as the thin film can be formed and is easily etched, and the same effect can be obtained. In addition, although not particularly limited, the semiconductor substrate 1 is a silicon substrate or the like, the insulating film 2 is a silicon oxide film or the like, the metal pad electrode 3 is an aluminum alloy or the like, and the protective film 4 is Is a silicon nitride film or the like.

[0013]

As described above, according to the present invention, after the formation of the insulating film, the surface of the insulating film and the metal pad electrode in the bonding pad region are formed with irregularities to thereby form the insulating film, the metal pad electrode, and the metal pad electrode. By increasing the contact area with the wire, the adhesion between the insulating film and the metal pad electrode and between the metal pad electrode and the wire can be improved. Therefore, it is possible to provide an excellent method of manufacturing a semiconductor device capable of exhibiting an effect of preventing peeling at the interface between the insulating film and the metal pad electrode or the interface between the metal pad electrode and the wire due to the tension of the wire during or after wire bonding.

[Brief description of the drawings]

FIG. 1 is a process cross-sectional view of a method for manufacturing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a process cross-sectional view of the semiconductor device manufacturing method according to the first embodiment of the present invention;

FIG. 3 is a sectional view of one step of the method for manufacturing the semiconductor device according to the first embodiment of the present invention;

FIG. 4 is a sectional view showing one step of the method for manufacturing the semiconductor device according to the first embodiment of the present invention;

FIG. 5 is a sectional view of one step of the method for manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 6 is a process cross-sectional view of the manufacturing method of the semiconductor device according to the first embodiment of the present invention;

FIG. 7 is a process cross-sectional view of a method for manufacturing a semiconductor device according to a second embodiment of the present invention.

FIG. 8 is a sectional view of one step of a method of manufacturing a semiconductor device according to a second embodiment of the present invention.

FIG. 9 is a cross-sectional view showing one step of a method for manufacturing a semiconductor device according to the second embodiment of the present invention.

FIG. 10 is a process cross-sectional view of the semiconductor device manufacturing method according to the second embodiment of the present invention;

FIG. 11 is a process cross-sectional view of a method for manufacturing a semiconductor device according to the second embodiment of the present invention.

FIG. 12 is a process cross-sectional view of the semiconductor device manufacturing method according to the second embodiment of the present invention;

FIG. 13 is a cross-sectional view showing one step of a method for manufacturing a semiconductor device according to the second embodiment of the present invention.

FIG. 14 is a cross-sectional view of one step of a conventional method for manufacturing a semiconductor device.

FIG. 15 is a cross-sectional view of one step of a conventional method for manufacturing a semiconductor device.

FIG. 16 is a cross-sectional view of one step of a conventional method for manufacturing a semiconductor device.

FIG. 17 is a sectional view of one step of a conventional method for manufacturing a semiconductor device.

[Explanation of symbols]

 Reference Signs List 1 semiconductor substrate 2 insulating film 3 metal pad electrode 4 protective film 5 wire 6 photoresist 7 polysilicon

Claims (2)

[Claims] A step of forming an etching mask for forming irregularities on the surface of the insulating film in the bonding pad region after forming the insulating film on the semiconductor substrate; and forming an insulating film in the bonding pad region through the etching mask. A method for manufacturing a semiconductor device, comprising: a step of etching a film to form irregularities; and a step of forming a metal pad electrode pattern in which a surface becomes irregular due to the irregularities of an insulating film in a bonding pad region. 2. A step of forming a thin film on the insulating film after forming an insulating film on the semiconductor substrate, and a step of forming an etching mask leaving a part of the thin film so as to have irregularities in a bonding pad region. And a step of etching the thin film in the bonding pad region through an etching mask to form irregularities on the surface of the insulating film, and forming a metal having an irregular surface on the surface of the bonding pad region due to the irregularities formed by the insulating film and the thin film. Forming a pad electrode pattern.