JPH1090636A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPH1090636A JPH1090636A JP8265558A JP26555896A JPH1090636A JP H1090636 A JPH1090636 A JP H1090636A JP 8265558 A JP8265558 A JP 8265558A JP 26555896 A JP26555896 A JP 26555896A JP H1090636 A JPH1090636 A JP H1090636A
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- heater
- semiconductor
- waveguides
- segment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は半導体導波型偏波回
転素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor waveguide polarization rotator.
【0002】[0002]
【従来の技術】半導体導波型光増幅器や半導体導波型光
変調器は、有用な光制御素子として広く利用されてい
る。しかしながら、半導体はその結晶構造に起因する異
方性を有し、これらの素子性能も入射される光信号の偏
波方向により、異なったものとなる。光信号の偏波面は
光ファイバ伝送中に不規則に回転するため、光ファイバ
伝送後の光信号に対し、半導体導波型光増幅器や半導体
導波型光変調器を使用する場合は偏波面を半導体導波型
光増幅器や半導体導波型光変調器に適した偏波面に合わ
せる必要がある。半導体導波型偏波回転素子は入射した
光の偏波面をその構造から定まる一定角度回転すること
ができ、上記の目的の為に有用である。2. Description of the Related Art Semiconductor waveguide optical amplifiers and semiconductor waveguide optical modulators are widely used as useful light control elements. However, semiconductors have anisotropy due to their crystal structure, and the performance of these elements also differs depending on the polarization direction of an incident optical signal. Since the polarization plane of the optical signal rotates irregularly during the transmission of the optical fiber, the polarization plane of the optical signal transmitted through the optical fiber must be changed when using a semiconductor waveguide optical amplifier or a semiconductor waveguide optical modulator. It is necessary to match a polarization plane suitable for a semiconductor waveguide optical amplifier or a semiconductor waveguide optical modulator. The semiconductor waveguide polarization rotator can rotate the plane of polarization of incident light by a fixed angle determined by its structure, and is useful for the above purpose.
【0003】一方、半導体導波型偏波回転素子はその偏
波回転角が構造により一定に定まる為、光ファイバから
の光信号の偏波面の角度と半導体導波型光増幅器や半導
体導波型変調器に適した偏波面の角度の差が以前と異な
る状況が生じた場合は、半導体導波型偏波回転素子その
ものを取り替えるか、半導体導波型偏波回転素子を切断
したり、他の半導体導波路を付加し、導波路を延長する
などして、半導体導波型偏波回転素子を新たに作り直す
必要があった。On the other hand, since the polarization rotation angle of a semiconductor waveguide type polarization rotation element is fixed depending on the structure, the angle of the plane of polarization of the optical signal from the optical fiber depends on the semiconductor waveguide type optical amplifier or semiconductor waveguide type. If a situation occurs in which the difference in the angle of the polarization plane suitable for the modulator is different from before, the semiconductor waveguide polarization rotator itself is replaced, the semiconductor waveguide polarization rotator is cut off, or other It was necessary to recreate a semiconductor waveguide type polarization rotator by adding a semiconductor waveguide and extending the waveguide.
【0004】[0004]
【発明が解決しようとする課題】本発明は上記の欠点を
改善するために提案されたもので、その目的は、従来の
半導体導波型偏波回転素子において偏波回転角を変更す
る事が困難であるという課題を解決することにある。SUMMARY OF THE INVENTION The present invention has been proposed to improve the above-mentioned drawbacks, and its purpose is to change the polarization rotation angle in a conventional semiconductor waveguide type polarization rotation element. It is to solve the problem that is difficult.
【0005】[0005]
【課題を解決するための手段】上記の目的を達成するた
め本発明は半導体基板上に形成され、断面構造もしくは
経路が光の進行方向に垂直な軸に対して非対称な導波路
セグメンシと、そのセグメント構造を光の進行方向に垂
直な軸に対して左右反転した構造を有する導波路セグメ
ントが1以上の周期でカスケードに接続された光導波型
素子であって、全部もしくは一部の導波路セグメント
の、全部もしくは一部の近傍に通電により導波路の温度
を昇温しうるヒータを有することを特徴とする半導体導
波型偏波回転素子を発明の特徴とするものである。半導
体導波型偏波回転素子は、断面構造もしくは経路が光の
進行方向に垂直な軸に対して非対称な導波路セグメント
とそのセグメント構造を光の進行方向に垂直な軸に対し
て左右反転した構造を有する導波路セグメントが1以上
の周期でカスケードに接続されて構成されている。導波
路断面構造と経路の曲率が同一の場合、最も大きな偏波
回転角を得るためには各導波路セグメントの長さLopt
は次式を満足する必要がある。 Lopt =1/√(δ2 +k2 ) ここで、δは導波路セグメントにおけるTEモードとT
Mモードの伝搬定数の差であり、kはTEモードとTM
モード間の結合定数である。導波路セグメントの実際の
長さLがLopt からずれるとその偏波回転素子の偏波回
転角は減少する。According to the present invention, there is provided a waveguide segment formed on a semiconductor substrate and having a sectional structure or a path asymmetrical with respect to an axis perpendicular to the light traveling direction. An optical waveguide element in which waveguide segments having a structure in which a segment structure is inverted left and right with respect to an axis perpendicular to the traveling direction of light are connected in a cascade at one or more periods, and all or a part of the waveguide segments The invention is characterized in that a semiconductor waveguide type polarization rotator having a heater capable of raising the temperature of the waveguide by energization in the vicinity of all or a part thereof. The semiconductor waveguide polarization rotator has a waveguide segment whose cross-sectional structure or path is asymmetric with respect to an axis perpendicular to the traveling direction of light, and the segment structure is reversed left and right with respect to an axis perpendicular to the traveling direction of light. Waveguide segments having a structure are connected in a cascade at one or more periods. When the waveguide cross-sectional structure and the curvature of the path are the same, to obtain the largest polarization rotation angle, the length L opt of each waveguide segment
Must satisfy the following equation. L opt = 1 / √ (δ 2 + k 2 ) where δ is the TE mode and T
The difference between the propagation constants of the M mode and k is the difference between the TE mode and the TM mode.
Coupling constant between modes. The actual length L of the waveguide segments polarization rotation angle of the shift when the polarization rotation element from L opt is reduced.
【0006】発明者らは、偏波回転素子の性能を調べた
結果、導波路の偏波回転に係わる特性であるδとkは温
度により大きく変動することを実験的に確認した。導体
導波型偏波回転素子の導波路近傍に通電により導波路の
温度を昇温しうるヒータを設置し、ヒータへの通電量に
より導波路の温度を昇温することにより、導波路のδと
kを変化する事ができ、それにより偏波回転角を通電前
と異なる角度に設定することができる。[0006] As a result of examining the performance of the polarization rotation element, the inventors have experimentally confirmed that δ and k, which are characteristics related to the polarization rotation of the waveguide, greatly vary with temperature. A heater capable of raising the temperature of the waveguide by energization is installed near the waveguide of the conductive waveguide type polarization rotation element, and the temperature of the waveguide is raised by increasing the amount of current supplied to the heater, thereby increasing the δ of the waveguide. And k can be changed, so that the polarization rotation angle can be set to a different angle from before energization.
【0007】[0007]
【発明の実施の形態】本発明は半導体導波型偏波回転素
子の導波路近傍に通電により導波路の温度を昇温しうる
ヒータを設置することにより、ヒータへの通電量により
導波路の温度を昇温し、導波路の偏波回転に係わる特性
を変えて、偏波回転角を変更する。BEST MODE FOR CARRYING OUT THE INVENTION The present invention provides a heater for raising the temperature of a waveguide by energizing near the waveguide of a semiconductor waveguide type polarization rotating element. The temperature is raised to change the polarization rotation angle of the waveguide, thereby changing the polarization rotation angle.
【0008】[0008]
【実施例】本発明の実施例を図面を参照して説明する。
図1は本発明の効果を示す為に製作した半導体導波路の
断面図である。図1において、1はInGaAsPから
なる導波路コア、2はInP基板(導波路クラッドを兼
ねる)、3はヒータである。図2は半導体導波路の上面
図である。4は信号光入力端、5は信号光出力端、6は
四分の一円弧状の第一導波路セグメント、7は四分の一
円弧状の第二導波路セグメント、8はヒータ、9はヒー
タへの電流入力端子である。10は入力側直線導波路、
11は出力側直線導波路、12はInP基板である。第
二導波路セグメントの経路は第一導波路セグメントの経
路を光の進行方向に対して垂直な基板法線方向について
左右反転したものとなっている。各導波路セグメントの
長さは150μmであり、波長1.55μmの光に対
し、Lopt となるように設計した。言い換えると波長
1.55μmの入射光に対し、無通電時に偏波回転角は
最大となる。An embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a sectional view of a semiconductor waveguide manufactured to show the effect of the present invention. In FIG. 1, 1 is a waveguide core made of InGaAsP, 2 is an InP substrate (also serving as a waveguide clad), and 3 is a heater. FIG. 2 is a top view of the semiconductor waveguide. 4 is a signal light input end, 5 is a signal light output end, 6 is a quarter-arc first waveguide segment, 7 is a quarter-arc second waveguide segment, 8 is a heater, and 9 is a heater. This is a current input terminal to the heater. 10 is an input side linear waveguide,
Reference numeral 11 denotes an output side linear waveguide, and reference numeral 12 denotes an InP substrate. The path of the second waveguide segment is obtained by inverting the path of the first waveguide segment left and right with respect to the substrate normal direction perpendicular to the light traveling direction. Each waveguide segment has a length of 150 μm and is designed to have L opt for light having a wavelength of 1.55 μm. In other words, the polarization rotation angle becomes maximum when no power is supplied to incident light having a wavelength of 1.55 μm.
【0009】本素子を実際に製作し、波長1.55μm
の入射光に対し、無通電時に偏波回転角を測定すると6
5度であった。次にヒータに通電を行い、ヒータ近傍の
導波路を昇温すると偏波回転角は減少した。図3はヒー
タへの注入電流量と偏波回転角の関係を示したものであ
る。200mA注入時には、偏波回転角は20度まで減
少している。このことは、半導体導波型偏波回転素子を
大幅に作り直すことなく、偏波回転角を変更する上で本
発明が有効で有ることを実証している。なお、ヒータは
導波路セグメントの全部あるいは一部の近傍に配置して
もよい。This device was actually manufactured, and the wavelength was 1.55 μm.
When the polarization rotation angle of the incident light of
5 degrees. Next, when the heater was energized and the waveguide near the heater was heated, the polarization rotation angle was reduced. FIG. 3 shows the relationship between the amount of current injected into the heater and the polarization rotation angle. At the time of 200 mA injection, the polarization rotation angle is reduced to 20 degrees. This demonstrates that the present invention is effective in changing the polarization rotation angle without significantly recreating the semiconductor waveguide type polarization rotation element. Note that the heater may be arranged near all or a part of the waveguide segment.
【0010】[0010]
【発明の効果】以上説明したように、本発明によれば、
半導体導波型偏波回転素子の偏波回転角をヒータへの注
入電流によりある範囲内で自由に設定出来るので、種々
の偏波回転角を有する信号光の偏波面を半導体導波型光
増幅器や半導体導波型光変調器に適した角度に合わせる
上で有効である。As described above, according to the present invention,
Since the polarization rotation angle of the semiconductor waveguide type polarization rotation element can be set freely within a certain range by the current injected into the heater, the polarization plane of the signal light having various polarization rotation angles can be changed to the semiconductor waveguide type optical amplifier. Or an angle suitable for a semiconductor waveguide type optical modulator.
【図1】本発明の効果を示す為に製作した半導体導波型
偏波回転素子の断面図を示す。FIG. 1 is a cross-sectional view of a semiconductor waveguide polarization rotator manufactured to show the effect of the present invention.
【図2】本発明の効果を示す為に製作した半導体導波型
偏波回転素子の上面図を示す。FIG. 2 is a top view of a semiconductor waveguide polarization rotator manufactured to show the effect of the present invention.
【図3】本発明の効果を示す為に製作した半導体導波型
偏波回転素子における波長1.55μmの光に対する偏
波回転角とヒータへの注入電流の関係を示す。FIG. 3 shows the relationship between the polarization rotation angle with respect to light having a wavelength of 1.55 μm and the current injected into a heater in a semiconductor waveguide type polarization rotation element manufactured to show the effect of the present invention.
1 InGaAsPからなる導波路コア 2 InP基板(導波路クラッドを兼ねる) 3 ヒータ 4 信号光入力端 5 信号光出力端 6 四分の一円弧状の第一導波路セグメント 7 四分の一円弧状の第二導波路セグメント 8 ヒータ 9 ヒータへの電流入力端子 10 入力側直線導波路 11 出力側直線導波路 12 InP基板 13 本発明の効果を示す為に製作した半導体導波型
偏波回転素子において、偏波回転角とヒータへの注入電
流の関係を示す曲線REFERENCE SIGNS LIST 1 Waveguide core made of InGaAsP 2 InP substrate (also serving as waveguide clad) 3 Heater 4 Signal light input end 5 Signal light output end 6 Quarter-arc first waveguide segment 7 Quarter-arc Second waveguide segment 8 Heater 9 Current input terminal to heater 10 Input-side linear waveguide 11 Output-side linear waveguide 12 InP substrate 13 In the semiconductor waveguide type polarization rotating element manufactured to show the effect of the present invention, Curve showing the relationship between the polarization rotation angle and the current injected into the heater
───────────────────────────────────────────────────── フロントページの続き (72)発明者 ルイ ウェイン 東京都新宿区西新宿三丁目19番2号 日本 電信電話株式会社内 (72)発明者 山中 孝之 東京都新宿区西新宿三丁目19番2号 日本 電信電話株式会社内 (72)発明者 横山 清行 東京都新宿区西新宿三丁目19番2号 日本 電信電話株式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Louis Wayne 3-19-2 Nishi Shinjuku, Shinjuku-ku, Tokyo Japan Telegraph and Telephone Corporation (72) Inventor Takayuki Yamanaka 3-192 Nishi Shinjuku, Shinjuku-ku, Tokyo No. Nippon Telegraph and Telephone Corporation (72) Inventor Kiyoyuki Yokoyama 3-2-1-2 Nishishinjuku, Shinjuku-ku, Tokyo Nippon Telegraph and Telephone Corporation
Claims (1)
くは経路が光の進行方向に垂直な軸に対して非対称な導
波路セグメントと、そのセグメント構造を光の進行方向
に垂直な軸に対して左右反転した構造を有する導波路セ
グメントが1以上の周期でカスケードに接続された光導
波型素子であって、全部もしくは一部の導波路セグメン
トの、全部もしくは一部の近傍に通電により導波路の温
度を昇温しうるヒータを有することを特徴とする半導体
導波型偏波回転素子。1. A waveguide segment formed on a semiconductor substrate and having a cross-sectional structure or a path asymmetric with respect to an axis perpendicular to the light traveling direction, and the segment structure is formed with respect to an axis perpendicular to the light traveling direction. An optical waveguide element in which a waveguide segment having a horizontally inverted structure is connected in a cascade at one or more periods. A semiconductor waveguide type polarization rotating element comprising a heater capable of raising the temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8265558A JPH1090636A (en) | 1996-09-13 | 1996-09-13 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8265558A JPH1090636A (en) | 1996-09-13 | 1996-09-13 | Optical semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1090636A true JPH1090636A (en) | 1998-04-10 |
Family
ID=17418787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8265558A Pending JPH1090636A (en) | 1996-09-13 | 1996-09-13 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1090636A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10032933A1 (en) * | 2000-07-06 | 2002-01-17 | Infineon Technologies Ag | Integrated waveguide arrangement, method for producing an integrated waveguide arrangement and waveguide components |
| CN110996423A (en) * | 2019-12-30 | 2020-04-10 | 广东美的厨房电器制造有限公司 | Method, device and device for generating time distribution coefficient of microwave cooking equipment |
-
1996
- 1996-09-13 JP JP8265558A patent/JPH1090636A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10032933A1 (en) * | 2000-07-06 | 2002-01-17 | Infineon Technologies Ag | Integrated waveguide arrangement, method for producing an integrated waveguide arrangement and waveguide components |
| US6671439B2 (en) | 2000-07-06 | 2003-12-30 | Infineon Technologies Ag | Integrated waveguide arrangement, process for producing an integrated waveguide arrangement, and waveguide components |
| DE10032933B4 (en) * | 2000-07-06 | 2004-07-15 | Infineon Technologies Ag | Integrated waveguide arrangement |
| CN110996423A (en) * | 2019-12-30 | 2020-04-10 | 广东美的厨房电器制造有限公司 | Method, device and device for generating time distribution coefficient of microwave cooking equipment |
| CN110996423B (en) * | 2019-12-30 | 2022-05-17 | 广东美的厨房电器制造有限公司 | Method, device and equipment for generating time distribution coefficient of microwave cooking equipment |
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Legal Events
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|---|---|---|---|
| A02 | Decision of refusal |
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