JPH10135481A - Devices consisting of thin film transistors - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the property of an n-channel organic semiconductor material to be used for a TFT that an n-type organic semiconductor compound has a single linear array of an nonsaturated ring and a LUMO energy level has a specific value besides showing a field-effect quantum mobility. SOLUTION: A device using a TFT consisting of an n-type organic semiconductor material consists of a thin film transistor with a gate 14, a source 10, a drain 12 and an n-type organic semiconductor compound. This n-type organic semiconductor compound has a single linear array of an unsaturated ring to be selected from a carbon ring and a heterocycle and has a lowest unoccupied molecular orbit(LUMO) energy level of about 3.5 to about 4.6eV in reference to a vacuum energy level. This compound shows an electric field effect electron mobility above 2⊗10<-4> CM<2> V<-1> S<-1> . Further, the n-type organic semiconductor compound is selected from NTCDA, NTCDI and TCNNQD.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a device having an organic thin film transistor (TFT).

[0002]

2. Description of the Related Art Organic thin film transistors (TFTs) are expected to be an important component of plastic circuits.
In particular, it is used for driving a display in a memory device of a portable computer, a pager, a transaction card or an identification tag, in which ease of manufacture, mechanical flexibility, and avoiding high temperatures are important. TFT
The organic semiconductor material for use preferably has some mutually correlated properties. The organic semiconductor material used for the transistor is a material that contains carbon together with other elements and has a charge mobility of at least about 10 ⁻⁴ cm ² V ⁻¹ s ⁻¹ at room temperature (20 ° C.). The utility of organic semiconductor materials for transistors is, for example, the highest occupied molecular orbital (HOM)
O) Energy level and lowest occupied molecular orbital (LUMO)
It can be determined by several parameters, such as energy level, field effect mobility (μ _FE ), and the on / off current ratio of the device containing the material. These parameters are described in the literature, Lowry et al., Mechanism and Theory in Or
ganic Chemistry, Harper & Row Publishers, 553 (197
6), Garnier et al., Synthetic Metals, 45, (1991) 16
3-171, and Dodabalapur et al., Science, 269, 1560
(1995).

Recently, relatively high mobility organic T
An FT material has been synthesized. These materials are mainly 0.1.
It is a p-type semiconductor having a mobility of 01 to 0.6 cm ² V ⁻¹ s ⁻¹ . Examples of this material include copper phthalocyanate
(copper phthalocyanine), α-sexithiophene (sexit
hiophene) and pentacene. Literature, Katz
et al., Chemistry of Materials, Vol. 7, No. 12, 22
35 (1995), Lin et al., Device Research Conference,
See Vol. 175 (1996). Similarly, N-type organic semiconductor materials having high mobility are more difficult to obtain. One group of electron carriers is perylenetetracarboxyl dianhydride (perylenetetracarbox).
ylic dianhidride (PTCDA) and its diimide derivatives. Literature, Dodabalapur et al., Sc
ience, 269, 1560 (1995). PTCDA
The structure of

Embedded image It is. This PTCDA is 10 ^-4 to 10 in the TFT.
^-5 indicating the mobility of the order of cm ² V ^-1 s ^-1. PTCD
The substituted and unsubstituted imide derivatives of A show slightly lower mobilities. This is mainly due to the expected lower electron affinity of the imide. 10 ^{-2 to} 0.3cm ²
N-channel mobilities (field-effect electron mobilities) in the range of V ^-1 s ^-1 have been achieved with C ₆₀ , but this compound becomes unstable with oxygen and moisture.

[0004] The lack of a suitable n-channel organic semiconductor material affects devices such as complementary circuits which require a combination of n-channel and p-channel TFTs. The lack of this suitable n-channel organic semiconductor material has led to the development of hybrid complementary circuits that include organic p-channel TFT material along with n-channel amorphous silicon TFT technology. Literature, A. Dodabalapur et al.,
See Appl. Phys. Lett., 68, 2264 (1996). Such a hybrid circuit shows good performance, but the organic p
Complementary circuits with channel TFTs and organic n-channel TFTs facilitate manufacturing and improve process efficiency.

[0005]

Thus, there is a need for n-channel organic semiconductor materials for TFTs that exhibit improved properties (particularly mobility), and the present invention provides such materials. With the goal.

[0006]

SUMMARY OF THE INVENTION The present invention is directed to a device having a thin film transistor. This transistor is
It comprises a gate, a source, a drain, and an n-type organic semiconductor compound. The n-type organic semiconductor compound has a single linear array of unsaturated rings selected from a carbon ring and a heterocyclic ring, and has a level of about 3.5 to about 3.5 based on vacuum energy level.
It has a lowest unoccupied molecular orbital (LUMO) energy level of 4.6 eV. This compound is 2 × 10 ⁻⁴ cm ² V
^-1 s ^-1 or more field effect electron mobility
on mobility). This device can have a p-channel organic TFT. The n-type organic semiconductor compound is 1,4,5,8-naphthalene tetracarboxylic dianhydride (NTCDA: naphthalene tetracarboxylic diadia).
nhydride), 1,4,5,8-naphthalene tetracarboxylic diimide (NTCDI: naphthalene tetracarboxylic dii)
mide), 11,11,12,12-tetracyanonaphtho-2,6-quinodimethane (TCNNQD: tetracyanonaphtho-2,6-quinodi)
methane).

[0007]

DETAILED DESCRIPTION OF THE INVENTION TFTs are well known. TF
A general embodiment of T is shown in FIG. The TFT has a source electrode 10, a drain electrode 12, a gate electrode 14, a gate dielectric 16, a substrate 18, and a semiconductor material 20. T
When the FT operates in the accumulation mode, the source 10
The charge leaving the device has mobility and conducts source-drain channel current. In the configuration of FIG. 1, charges may be injected in a horizontal direction from the source 10 to form a channel. Without a gate field, the channel is pinched off, and ideally there is no source-drain conduction. The off current is the source 10 when the channel is pinched off.
This is defined as the current flowing between the gate and the drain 12, and for a TFT in accumulation mode, this occurs for gate-source voltages less than zero. The on-current is defined as the current flowing between source 10 and drain 12 when the channel is conducting. For n-channel accumulation mode TFTs, this occurs for positive gate-source voltages. For a gate dielectric 16 about 200 nm thick, TF
The gate-source voltage required for T to be on is typically greater than 10V. Switching between on and off is
This is achieved by imposing and removing an electric field from the gate electrode 14 to the semiconductor-dielectric interface across the gate dielectric 16 to effectively charge the capacitor.

The construction of a complementary circuit such as the inverter of FIG. 2 is also well known. In the complementary circuit, usually, the TFT of the slower channel is used as the load 30, and the TFT of the faster channel is used as the driving element (driver) 32. Such a complementary circuit comprises a power supply 34, an input 3
6, and an output 38.

As an element having an organic TFT, an LCD is used.
There are displays, RF identification tags, so-called smart cards, electronic tickets and other electronic product identification tags, and the like.

[0010] The present invention relates to a T-type organic semiconductor material.
Regarding devices using FT, in particular, gates, sources,
The present invention relates to a device comprising a thin film transistor having a drain and an n-type organic semiconductor compound. The n-type organic semiconductor compound has a single linear array of unsaturated rings selected from carbocycles and heterocycles, and has a minimum unoccupied molecular orbital of about 3.5 to about 4.6 eV (based on vacuum energy level). LUMO) energy level. This compound exhibits a field effect electron mobility of 2 × 10 ⁻⁴ cm ² V ⁻¹ s ⁻¹ or more. LUMO may be between about 4.0 eV and about 4.6 eV based on vacuum energy level.

[0011] It is known that the LUMO energy level and the reduced potential are almost characteristic of the material. LUM
O energy level values are measured relative to the vacuum energy level, and reduced potential values are measured in solution relative to a standard electrode. The tolerance for both these parameters is approximately 1.1 eV according to the invention. Thus, any property can be used to define the compounds of the device of the present invention. Defining the decreasing potential by the standard electrode means that the decreasing potential is measured in comparison with the electrode potential. A typical standard calomel electrode is 4.2 eV. For this 4.2 eV calomel electrode, the decreasing potential, equivalent to a LUMO energy level of about 3.5 to about 4.6 eV, is about -0.7 to about +0.4 eV relative to a standard calomel electrode. As is known, LUMO energy levels are usually measured by analyzing the emission spectrum (eg, x-rays, ultraviolet), and the reduced potential is usually measured by electrochemical potential scanning.

The compound having a single linear array of a carbocyclic or heterocyclic ring has a π-shared structure of at least two rings as a base structure (core structure), and each ring has two or less other rings of the base structure. Such a compound. A single linear array of rings may be substituted with various non-cyclic substituents. Substituents on the array may be carbocyclic or heterocyclic rings attached to the structure, such that they alter the electron energy level or process parameters of the compound, rather than merely increasing the degree of conjugation. When it mainly functions, it is defined as a substituent. The cyclic anhydride described later and the imide group of NTCDA and NTCDI are substituents according to this definition. Compounds having a single linear array do not have more than one radical structure.
PTCDA, whose molecular structure is described above, is not a compound having a single linear array of carbocycles or heterocycles. This is P
This is because the ring having the group structure of TCDA is attached to three or more other rings. PTCDA is also considered as having two separate linear arrays, each with two rings.

The carbocyclic or heterocyclic ring of the base ring is a 5- or 6-membered ring. Single linear arrays are based on naphthalene or naphthoquinoids having the following structure:

Embedded image An array of compounds of the present invention may be based on the following structure:

Embedded image Although these frameworks are represented only by carbon atoms, certain positions in these structures may be occupied by other atoms.

While the invention is not limited to any theory, it is believed that a single linear array of unsaturated carbocycles or heterocycles provides the desired π * orbital overlap representing good electron mobility. These orbits are described, for example, in the literature, Lowry et a
l., Mechanism and Theory in Organic Chemistry, Harp
er & Row Publishers, 28-31, 559-566 (1976). In relation to this orbital overlap, the permissible LUMO energy levels are:
Appear to prevent both. (A) the creation of too many electron traps in the n-type organic semiconductor compound, such traps preventing electrons from reaching the LUMO level; and (b) the electron affinity in the n-type organic semiconductor compound. The semiconductor material becomes heavily doped and begins to become a conductive metal property (this occurs at LUMO energy level values that are too low). This combination of the orbital overlap and the selected LUMO energy level is believed to improve the mobility of the n-type organic semiconductor compound in the device of the present invention.

The desired LUMO energy level value is 1
It is obtained by combining the above substituents with a specific group ring. This LUMO energy level value can be obtained without significantly affecting the electron mobility created by the overlap of the π ^* orbitals. This substituent can be characterized as a π-electron withdrawing or resonant withdrawing group. Such groups are described, for example, in the literature, Lowry et al., Mechanism and Theory in Organic.
Chemistry, Harper & Row Publishers, 62-71 (1976),
Are defined and discussed. This discussion demonstrates how the use of these substituents can achieve the desired LUMO energy level values. In particular, it can be considered that the substituent stabilizes the negative charge of the core structure, as occurs from the electron injection into LUMO, and thus stabilizes the perturbation of LUMO and lowers the energy. This phenomenon was described in the literature, Ferraro et al., Introduction to Synthetic Elec.
trical Conductors, AcademicPress, Inc., 22 (1987),
Indicated by. Excellent substituents include cyclic anhydride, cyclic imide, and

Embedded image Can be used. Other substituents include cyano,
Oxo, halogen, nitro and carbonyl groups,
And the following two substituents.

Embedded image Here, R 'is an organic electron-donating group or a halogen (groups such as this last group are discussed, for example, in the literature, MRS Symp. Proceedings, 413, 13 (1996)).

The following substituents were also found to be excellent.

Embedded image Here, R is an organic electron non-donating group or H.

An n-type organic semiconductor compound having a single linear array of unsaturated carbocyclic or heterocyclic ring is 1,4,5,8-naphthalenetetracarboxyl dianhydride (NTCDA: n
aphthalene tetracarboxylic dianhydride), 1,4,5,8-
Naphthalenetetracarboxylimide (NTCDI: n
aphthalene tetracarboxylic diimide), 11,11,12,12-
Tetracyanonaphth-2,6-quinodimethane (TCNNQD:
tetracyanonaphtho-2,6-quinodimethane). These structures are shown below.

Embedded image The LUMO energy values of these materials are each 3.
8-3.9 eV, 3.5-3.8 eV, 4.3-4.4
eV. These values were measured by the method described above.

Different mobilities were measured in n-channel organic TFTs deposited at different substrate temperatures, as in the example below. Although the present invention is not limited by any theory, it is believed that the different mobilities at different substrate temperatures are due in part to morphological changes at higher temperatures.
Instead, it is conceivable that the bonding between the interface between the dielectric and the semiconductor in the TFT becomes stronger when the substrate temperature is high, and that a trace amount of impurities selectively melts out of the semiconductor at a high temperature.

In the n-type organic semiconductor compound of the device of the present invention, the single linear array may be associated with one or more inorganic materials and may be associated with additional polymeric materials. In addition, a transistor comprises a mixture of one or more separate organic compounds and a compound having a single linear array, or a mixture of one or more separate organic compounds or polymers and a compound having a single linear array. You may. In addition, a transistor can have two or more different n's having a single linear array of unsaturated carbocycles or heterocycles.
A mixture of organic semiconductor compounds having a LUMO energy level of about 3.5-4.6 eV with respect to the vacuum energy level and 2 × 10 ^−4.
It may be composed of a mixture exhibiting a field effect electron mobility of not less than cm ² V ⁻¹ s ⁻¹ .

The compound having a single linear array is TF
T substrate (eg, silicon dioxide, polyimide (including pre-imidized polyimide)), or Al, Ta
Etc.) by vacuum evaporation. Such vacuum deposition can be performed by a turbopump or diffusion pumped vacuum system at a substrate pressure in the range of ^10-7 to ^10-5 torr. The compound is used by a liquid phase deposition method, such as mixing the n-type organic semiconductor compound with a polymer that can be applied to the substrate, or by mixing the n-type organic semiconductor compound in a solution that can deposit the semiconductor compound. Is good. The compound can be applied or patterned by a liquid deposition method such as stamping, printing, etching or lithography.

In addition, n-type organic semiconductor compounds having a single linear array of unsaturated carbocyclic or heterocyclic rings may be chemically treated after deposition prior to use in transistors.
Such a treatment is performed, for example, to change the incidental conductivity of the compound or to improve the stability in the atmosphere. Unwanted dopants in the n-type organic semiconductor compound can be removed, for example, by treating with an oxidizing agent to compensate for unwanted free charges. Iodine can be used as the oxidizing agent. Unwanted dopants present in the compounds of the device of the present invention can be removed with iodine, for example, by exposing the device to gaseous iodine at room temperature for several seconds. Excess iodine can be generated, for example, by placing the exposed device in a vacuum chamber for about 10 minutes to about 10 minutes.
It can be removed by reducing the pressure to ^-2 torr.

In addition to the n-type compound consisting of a single linear array, the device of the present invention can further comprise a p-channel organic thin film transistor. That is, the present invention
It is intended for devices consisting of complementary circuits. It is preferable that the p-type organic semiconductor compound of such a complementary circuit has comparable or better field effect mobility than that of the n-type organic semiconductor compound. Examples of suitable p-type organic semiconductor compounds include copper phthalocyanine, α-sexiophen, pentacene, and polythiophene.

Further, the n-type organic semiconductor compound of the device of the present invention is disclosed in US Patent Application No. 08/4 of Dodabalapur et al.
It can be used as one layer in a two-layer organic TFT as described in No. 41142. Such a device has two active semiconductor materials, one n-type and one p-type. Depending on the sign and magnitude of the gate bias, such devices can function as either n-channel or p-channel TFTs. Literature, Doda
See balapur et al., Science, 269, 1560 (1995).

[0024]

The following is an example of an experiment.

NTCDA, NTCDI and TCNNQD were purchased from Aldrich, ICN and TCIC Chemical Co., respectively. Each was purified by vacuum sublimation at a pressure of 10 ^-4 torr or less. TFTs from each material were fabricated using a 300 nm insulating layer of silicon oxide thermally grown on n-type silicon, which served as the gate electrode. The gold source and drain contacts have a channel width W of 250μ
m and the channel length L were determined by photolithography so as to be 4, 12, 25 μm. The organic semiconductor material was vacuum-deposited on the substrate at a base pressure of 3 × 10 ⁻⁶ torr or less to form a thin film having a thickness of about 500 Å. The electrical characteristics of TFTs are measured by Hewlett-Packard 4
The measurement was performed in vacuum using a 145b semiconductor parameter analyzer.

NTCDA TFT FIG. 3 shows that the substrate is deposited at a substrate temperature of 55 ° C.
4 shows the electrical characteristics of a TFT manufactured from NTCDA having a thickness of μm. The curves are linear at low drain-source voltages and are saturated at high drain-source voltages. It shows that N-type conduction is present in the NTCDA TFT. This is under positive gate bias is positive drain voltage, increased by that source - because it is necessary to achieve the drain current (I _{D S).} Field effect mobility (mu _FE) is formula can be calculated by _{I DS = (Wc i / 2L} ) μ FE (V G -V O) 2 with saturated phase. Here, L and W are length and width of each channel, C _i is the capacitance per unit area of the oxide, V _G is the gate voltage, V _O is estimated threshold voltage (which can be calculated by plotting the I _DS ^1/2 for V _G.) a.

For an NTCDA-based TFT deposited at a substrate temperature of 25 ° C., 1 × 10 ^{−3 to} 3 × 10 ⁻³ cm ²
A field effect mobility of V ^-1 s ^-1 was obtained. A lower mobility was observed when the TFT was exposed to atmospheric moisture, and the current changed in magnitude inversely to the channel length. Substrate temperature 25
^10-4 cm ^{2 for} NTCDA TFTs deposited at
Mobility on the order of V ^-1 s ^-1 was observed. The difference in mobility at different substrate temperatures is thought to be due in part to morphological changes at higher temperatures. Instead, it is conceivable that the bonding between the interface between the dielectric and the semiconductor in the TFT becomes stronger when the substrate temperature is high, and that a trace amount of impurities selectively melts out of the semiconductor at a high temperature. X
Linear photoelectron spectroscopy showed that the previously adsorbed impurities did not desorb from the substrate.

NTCDI TFT The electrical properties of NTCDI TFTs deposited at a substrate temperature of 55 ° C. are similar to those of NTCDA, namely, a linear region at low drain-source voltage and a high drain-source voltage.
This indicates the existence of a saturation region in the source voltage. The electron mobility for these devices is 2 × 10 ^{−4 to} 3 × 10
^-4 cm ² V ⁻¹ s ⁻¹ . This is NTCD
The size is one digit lower than the mobility observed in A.

The mobility of a TCNNQD TFT deposited at a substrate temperature of 25 ° C. was measured. Mobility 9 × 10 ^-4 to 2 × 10
^-3 cm ² V ^-1 s ^-1 was obtained. These mobilities are determined by the intentionally doped tetracyanoquinodimethane (TCNQ: t
etracyanoquinodimethane) and comparable to that of NTCDA. The TFTs based on TCNNQD showed high off-current, but showed the possibility of accidental dopants that could contribute to the measured mobility. After exposing the device to gaseous iodine generated from solid iodine at room temperature for a few seconds, the on / off ratio was reduced from 1.5 to 2 with only a small decrease in mobility as reflected in FIG. Increased to 5-18.

Complementary Circuit The following complementary circuit was constructed essentially as shown in FIG. The channel width of each TFT was 250 μm and the length was in the range of 4 to 100 μm. The n-channel and p-channel TFTs were provided on separate chips and electrically connected. It is possible to provide complementary circuits with both devices on a single chip, or to combine n-channel and p-channel functions in a single heterostructure device. Typical mobilities in p-channel TFTs are greater than 10 ⁻² cm ² V ⁻¹ s ⁻¹ .

FIG. 5 shows characteristics of a complementary inverter circuit in which a pentacene p-channel TFT is a load and an NTCDA n-channel TFT is a driving element. p channel and n
The channel lengths of the channel TFT were 24 μm and 4 μm, respectively. Supply voltage is a 10V, the value of the output voltage to a person of the input voltage V _in is smaller (V _out) is _{substantially, V supply [R off (n} ) / {R on (p) + R
_off (n)｝]. Here, R _on and R _off shown in {}
Is the off resistance and on resistance of the TFT. Under these conditions, the p-channel load was on and the n-channel switch transistor was off. As the input voltage increased, the n-channel TFT gradually turned on and the p-channel device gradually turned off. Finally, V _in Oite large in, V _{out is, [R on (n) /} {R on (p) +
R _off (n)｝]. These equations suggest the importance of low on and off resistance of the TFT.

FIG. 6 shows an NTCDA n-channel TFT.
5 shows characteristics of a complementary circuit having a load and a copper phthalocyanine p-channel TFT driving element. The channel length of both TFTs was 4 μm and the supply voltage was −10V.

[0033]

As described above, the device of the present invention has a gate, a source, a drain, and a thin film transistor comprising an n-type organic semiconductor compound. The n-type organic semiconductor compound is composed of a carbon ring and a heterocyclic ring. It has a single linear array of selected unsaturated rings and has a minimum unoccupied molecular orbital energy level of about 3.5-4.6 eV, relative to vacuum energy level. This compound is 2 × 10
^-4 shows a cm ² V ^-1 s ^-1 or more field-effect electron mobility. This device can have a p-channel organic TFT. n-type organic semiconductor compounds are NTCDA, NTCD
I, TCNNQD. In this manner, an experimental result such as vapor was obtained, and the characteristics (particularly, mobility) of the n-channel organic semiconductor material used for the TFT were improved.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a typical TFT configuration.

FIG. 2 is a circuit diagram of a configuration of a complementary circuit inverter showing a load and driving.

FIG. 3 is a graph showing characteristics of a TFT manufactured by NTCDA.

FIG. 4 is a graph showing the characteristics of a TFT manufactured by TCNNQD before and after treatment with gaseous iodine.

FIG. 5: Pentacene (p-channel) TFT as load, NTCDA (n-channel) as drive element
FIG. 9 is a graph showing characteristics of a complementary circuit having the following.

FIG. 6 shows an NTCDA (n-channel) TFT as a load;
Copper phthalocyanine (p
FIG. 4 is a graph showing characteristics of a complementary circuit having a (channel) TFT.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Source electrode 12 Drain electrode 14 Gate electrode 16 Gate dielectric 18 Substrate 20 Semiconductor material 30 Load 32 Drive element 34 Power supply 36 Input 38 Output

 ──────────────────────────────────────────────────続 き Continuation of the front page (71) Applicant 596077259 600 Mountain Avenue, Murray Hill, New Jersey 07974-0636 U.S.A. S. A. (72) Inventor Howard Edan Katz United States, 07901 Butler Parkway, Summit, New Jersey 135 (72) Inventor Joyce G. Rakunindham United States, 07974 New Jersey, Murray Hill, Ezan Drive 61, Apartment 1A

Claims (14)

[Claims] 1. A device comprising a thin film transistor having a gate, a source, a drain, and an n-type organic semiconductor compound, wherein the n-type organic semiconductor compound is an unsaturated compound selected from a carbocycle and a heterocycle. LUMO with a single linear array of rings
The energy level is about 3.5 to about 4.6 eV based on the vacuum energy level, and 2 × 10 ⁻⁴ cm
^A device including a thin film transistor, which has a field-effect electron mobility of ² V ^-1 s ^-1 or more. 2. The device of claim 1, wherein the single linear array comprises a ring selected from a five factor ring, a six factor ring, and a combination thereof. 3. The device of claim 1, wherein said LUMO energy level is between about 4.0 and about 4.6 eV with respect to a vacuum energy level. 4. The device of claim 1, wherein said single linear array is based on a structure selected from naphthalene and naphthoquinoid. 5. The compound according to claim 1, wherein the compound is 1,4,5,8-naphthalenetetracarboxyl dianhydride (NTCDA: naphtha).
lene tetracarboxylic dianhydride), 1,4,5,8-naphthalenetetracarboxdiimide (NTCDI: naphtha
lene tetracarboxylic diimide), 11,11,12,12-tetracyanonaphth-2,6-quinodimethane (TCNNQD: tetrac
The device according to claim 1, wherein the device is a compound selected from yanonaphtho-2,6-quinodimethane). 6. The single linear array comprises cyclic anhydride, cyclic imide, cyano, oxo, halogen, nitro, carbonyl, (R ′ is selected from non-organic electron donating groups and halogens), The device according to claim 1, further comprising at least one substituent selected from (R is selected from a non-organic electron donating group and H). 7. The single linear array may include at least one
2. The composition of claim 1, wherein said substance is bound to two inorganic substances.
The described device. 8. The single linear array may include at least one
The device of claim 1, wherein the device is attached to two additional polymeric substances. 9. The device of claim 1, wherein the transistor comprises a mixture of a compound having a single linear array of unsaturated carbocycles or heterocycles and at least one inorganic compound. 10. The transistor of claim 1, wherein said transistor comprises a mixture of a compound having a single linear array of unsaturated carbocycles or heterocycles and at least one further organic or polymer compound. device. 11. The transistor comprises a single linear array of unsaturated carbocycles or heterocycles, wherein the LUMO energy level is about 3.50 with respect to the vacuum energy level.
5 to about 4.6 eV, and 2 × 10 ⁻⁴ cm ² V ⁻¹
The device of claim 1, further comprising a second compound that exhibits a field effect electron mobility of at least s- ¹ . 12. The device according to claim 1, wherein the compound is chemically treated after the deposition. 13. The device of claim 12, wherein the post-deposition chemical treatment comprises removing a dopant. 14. The semiconductor device according to claim 1, further comprising a p-channel organic thin-film transistor having a gate, a source, a drain, and a p-type organic semiconductor compound.
The described device.