JPH0393700A - Heat treating method and device of silicon single crystal and production device thereof - Google Patents

Abstract

PURPOSE:To obtain a Si single crystal having excellent pressure resistant characteristics of oxidized membrane by retaining Si single crystal grown by Czochralski(CZ) method at prescribed temperature for prescribed time in vacuum or inert gas and then gradually cooling the single crystal to a specific temperature. CONSTITUTION:A Si single crystal (CZ Si single crystal) grown by Czochralski(CZ) method and hung in a chamber 13 is subjected to heat treatment by high frequency coil 18 as follows: The CZ Si single crystal is retained at 1300-1400 deg.C for 10min and then temperature of the single crystal is lowered at a cooling rate of <=1.7 deg.C/min between the above-mentioned temperature and 1200 deg.C. Thereby Si single crystal having excellent pressure resistance of oxidized membrane and hardly causing oxidation induction laminate flaw (OSF) can be obtained. Desired heat history can be readily applied to the CZ Si single crystal by using the heat treatment device. Therefore, either one or both of oxidized membrane characteristics or OSF occurrence characteristics of CZ Si single crystal having been produced by a conventional method can be improved.

Description

[Detailed description of the invention]

[Industrial Field of Application] The present invention relates to a heat treatment method and apparatus for obtaining a silicon single crystal that has excellent oxide film breakdown voltage characteristics and is less likely to cause oxidation-induced stacking faults (hereinafter referred to as OSF), and a heat treatment method and apparatus for such a single crystal. This invention relates to manufacturing equipment.

[Conventional technology]

2. Description of the Related Art Various methods have been known in the past for growing silicon single crystals for manufacturing devices such as ICs and LSIs. Among these, the Czochralski method, in which a single crystal rod is grown by pulling up a seed crystal immersed in a silicon melt in a quartz crucible, is used. ■Silicon wafers (hereinafter referred to as CZ wafers) manufactured by this method are repeatedly Hard to warp even after heat treatment, ■
Intrinsic ●It is widely used industrially because it has a gettering effect and is resistant to polymerized metal contamination from the device manufacturing process. Both of the above two advantages of the Cz wafer are due to the oxygen contained in the crystal. However, on the other hand, this oxygen causes heat treatment-induced crystal defects. When crystal defects appear in the active region of a device, device characteristics are significantly degraded, so methods to reduce them have been sought. In particular, OSFs generated during oxidation processes
This is an extremely important issue because oxidation heat treatment is essential in the LSI manufacturing process, and it is essential for silicon single crystals for devices to have the property of being difficult to generate OSFs. In addition, in recent years, with the increase in the degree of integration of MOS devices, there has been a strong desire to improve the reliability of gate oxide films.
Oxide film breakdown voltage is one of the important material properties that determines its reliability.
Therefore, the Cz wafer is also required to have excellent oxide film breakdown voltage characteristics. Silicon single crystal grown by the Czochralski method (
It is widely known that the OSF generation behavior of CZ silicon single crystals (hereinafter referred to as CZ silicon single crystals) is influenced by crystal growth conditions. NIKKEI MICROD
EVICES 19g6 July issue”, p87-10g
>. According to the findings of the present inventors, the higher the crystal pulling rate, the more difficult it is for OSF to occur. However, when a CZ silicon single crystal is grown at the above-mentioned crystal pulling rate, the oxide film breakdown voltage characteristics of the single crystal do not reach a satisfactory level, as seen in the examples described later. According to the findings of the present inventors, as the crystal pulling rate increases, the oxide film breakdown voltage characteristics tend to decrease. In other words, because of these contradictory trends, it has been difficult using conventional manufacturing techniques to manufacture silicon single crystals that have excellent oxide film breakdown voltage characteristics and are less likely to generate OSFs. As a method for manufacturing a silicon single crystal in which OSF is less likely to occur, there is a method of heat-treating a silicon wafer in an A atmosphere containing a trace amount of oxygen, as disclosed in, for example, Japanese Unexamined Patent Publication No. 55-127024. As a method for manufacturing a silicon single crystal with excellent oxide film breakdown voltage characteristics,
A method of sacrificial oxidation of silicon wafers at a high temperature of 1150°C is known (for example, Kikuo Yamabe, "Thin Silicon Oxide Film (22nd Semiconductor Specialized Seminar Preliminary Collection, Yamagata)", August 1984, pal-92). ). All of these are attempts to improve the material properties of silicon wafers through heat treatment of the wafers. CZ silicon wafer, for example 1150
When heat treatment is performed at a temperature of about °C or higher, a denuded zone (hereinafter referred to as DZ
A surface defect-free layer with a low concentration of solid dissolved oxygen, called a ferrite layer, is formed. As described below, the improvement of material properties by the above method is based on the formation of the DZ, but since the manufacturing process of electronic devices differs depending on each manufacturer, such a method of forming the DZ in advance is sometimes difficult to use. For this reason, it has not been given an overall positive evaluation. Especially for CZ silicon single crystal manufacturers,
It is difficult to use conventional methods due to various reasons. If the solid solution oxygen concentration in the Cz silicon single crystal is reduced, O
It has already been clarified in many documents that the generation of SF is suppressed (for example, Masatake Kishino, "Very LSI Process Data Handbook, Chapter 1 Section 4 Heat Treatment-Induced Micro-Defects" (April 15, 1982) (published by Japan), Science Forum Co., Ltd., p.91). Furthermore, it is known that the oxide film breakdown voltage of a CZ silicon wafer is improved by forming a DZ through high-temperature heat treatment, but if the DZ is removed by a method such as polishing, the oxide film breakdown voltage decreases again. (For example, Kikuo Yamabe, “Thin Silicon Oxide Film (22nd Semiconductor I. Remon Seminar Preparation Collection, Yamagata)” J
August 1984, pal~92>. Therefore, it can be said that the conventional method of improving material properties by high-temperature heat treatment of silicon wafers utilizes the generation of DZ with a low solid solution oxygen concentration, as described above. BACKGROUND ART Hitherto, various types of heat treatment furnaces for silicon single crystal wafers manufactured by the Czochralski method, such as those called vertical furnaces or horizontal furnaces, have been known. However, all of these furnaces are heat treatment furnaces for silicon single crystal wafers, and have a structure that is difficult to use as a high temperature heat treatment furnace for Cz silicon single crystals, so there are problems such as the occurrence of dislocations during heat treatment. [To be solved by the invention: jJA problem] In view of the above-mentioned problems, the present invention has been proposed to solve the problems described above.
A heat treatment method and apparatus for giving a Cz silicon single crystal characteristics that are unlikely to occur, and a Cz silicon single crystal having the above characteristics.
The purpose of the present invention is to provide a haze for manufacturing silicon single crystals. [Means for Solving the Problems] The heat treatment method of the present invention involves holding a CZ silicon single crystal at a temperature of 1300°C or higher and 1400°C or lower for 10 minutes or more in vacuum or an inert gas, and then heating the CZ silicon single crystal at a temperature of 1200°C or higher from that temperature.
℃ at a cooling rate of 1.7℃/min or less. The heat treatment apparatus of the present invention includes a mechanism for suspending and holding a CZ silicon single crystal, and a heating means disposed around the single crystal, and the heating mechanism and the single crystal are moved up and down or both. It is characterized by comprising a mechanism for moving the single crystal and a mechanism for rotating the single crystal about a vertical line. In the heat treatment method and heat treatment apparatus of the present invention, the CZ silicon single crystal to be treated may be a single crystal rod as grown, or a single crystal block cut into an appropriate length. Furthermore, the silicon single crystal manufacturing apparatus of the present invention includes a crucible for heating and melting raw materials, and a means for pulling the silicon single crystal from the melt in the crucible. The method is characterized in that it includes a heating means arranged around the pulled single crystal. [Function] The specific structure and structure of the present invention will be explained below with reference to figures and tables. First, prior to explaining the present invention, an evaluation method used to investigate the characteristics of CZ silicon single crystal will be described. FIG. 5 is a cross section of a MOS diode mounted on a silicon wafer obtained from the single crystal when evaluating the oxide film breakdown voltage of the CZ silicon single crystal.
A Si02 layer 27 is formed on top of which the upper layer is aluminum 24 and the lower layer is doped polycrystalline silicon 25.
A two-layer gate electrode 26 with a diameter of 5 mm is formed by '! A large number of them are formed as shown in Figure J6. The means for evaluating the oxide film breakdown voltage characteristics of the silicon single crystal obtained according to the present invention will be explained with reference to Table 1. The single crystal according to the present invention is sliced, wrapped, polished, etc.
Normally, a wafer manufactured through various steps necessary for industrially manufacturing silicon wafers is cleaned (1), gate oxidized to form a Si02 layer (2), and a polycrystalline silicon film is deposited. (3) This polycrystalline silicon is doped by ion implantation (6). Pre-oxidation cleaning (4) and polycrystalline silicon oxidation (5) are pre-treatments for ion implantation (6). Next, pre-anneal cleaning (7) is performed, drive annealing is performed to make the dopant in the polycrystalline silicon a solid solution (8), and the polycrystalline silicon oxide film is etched away (
9), forming an aluminum layer by depositing aluminum (10); Next, in order to mount a two-layer gate electrode with a diameter of 5 mm, a positive resist film is coated and patterned by lithography (11), the aluminum layer is etched (12), and the polycrystalline silicon film is etched (12).
1B), removing the resist film (14). Then, after stabilizing the Si/Si02 interface by hydrogen annealing (1
5) A resist film is applied to the front surface to protect the MOS diode (16), and the back single crystal silicon film is removed by plasma etching (17). A protective resist film is reapplied to the front surface (18), the back oxide film is removed by etching (19), and gold is deposited for p-type and gold/antimony alloy is deposited for n-type. A back electrode is formed (20). Finally, after removing the protective resist film (2
1) Evaluate the oxide film breakdown voltage characteristics by the voltage ramping method (22). The voltage ramping method is as shown in Figure 45.
A DC voltage with a polarity that causes majority carriers to be injected from the silicon substrate is applied between the aluminum layer 24 and the back electrode,
This is a method in which the voltage is increased stepwise over time. In addition, in this evaluation method, the voltage increase per step of the voltage ramping method is 0.0 in terms of electric field. 2
When the current density flowing through the SiO2 layer 27 in Fig. 5 is 1.0 μA/cd, the SiO2 layer 27
The average electric field applied to 8. MO showing OMV/cw+ or more
The oxide film breakdown voltage characteristics of the silicon single crystal were evaluated based on the ratio of the number of S diodes (this is referred to as the C mode pass rate). Next, a method for evaluating the OSF generation characteristics of the silicon single crystal obtained according to the present invention will be explained with reference to Table 2. The single crystal is sliced, and the wafer obtained through the various steps normally required for industrially manufacturing silicon wafers, such as lapping and polishing, is cleaned (1) and heated at 1100°C for 60 minutes using the pi-mouth method. After performing wet oxidation (2) and removing the surface oxide film with an HF aqueous solution (3), the number of etch pits generated on the wafer surface was measured using a microscope by light etching for 90 seconds (etching amount approximately 1.5 μm). (4), and the OSF density at the measurement site is determined from the area of 5 adjacent fields of view (diameter 0.174 cm x 5) arranged in a cross shape. The OSF density was measured over the entire surface of the wafer, and the OSF generation characteristics of the silicon single crystal were evaluated based on the maximum value. In addition, in this evaluation method, the plane orientation is (1 1 1)
The maximum OSF density is 20 pieces/cd or less on wafers,
(100) OSF if 50 wafers/cd or less
It was determined that this would not occur. The reason for the limitation in the heat treatment method of the present invention will be explained based on the experimental results described below. If no heat treatment was applied first, as shown in Table 3, NO
．． No. 4 does not cause OSF, but the C mode pass rate is low and the oxide film breakdown voltage characteristics are not improved. On the other hand, NO. with a lower pulling speed. In No. 5, the oxide film breakdown voltage characteristics are slightly improved, but OSF occurs. Next, if the heat treatment temperature is less than 1300°C, or if the holding time is less than 10 minutes at 1300°C or higher, as shown in Tables 3 and 4, the oxide film breakdown voltage characteristics or OSF generation characteristics will deteriorate. No improvement. In addition, from a temperature of 1300℃ or higher to 1200℃
Even if the cooling rate to 0.degree. C. exceeds 1.7.degree. C./min, the oxide film breakdown voltage characteristics or OSF generation characteristics are not improved. Therefore, in the present invention, the lower limit of the heat treatment temperature for Cz silicon single crystal is 1300°C, the lower limit of the holding time is 10 minutes, and 1300°C.
The upper limit of the cooling rate from ℃ or higher to 1200℃ is 1.7℃
/minute. The true upper limit of the heat treatment temperature is the melting point of silicon, but if it exceeds 1400°C, it becomes difficult to control the temperature, and sometimes dislocations may occur or the surface of the silicon single crystal may be significantly damaged. Therefore, in the present invention, the upper limit of the heat treatment temperature is set to 1400°C. In addition, in the heat treatment method of the present invention, the heat treatment temperature of the silicon single crystal is 1340 to 1360 °C, the holding time is 20 to 40 minutes, and the cooling rate from the heat treatment temperature to 1200 °C is 0.5 to 1.5 °C. /min is a more desirable range of conditions. In the method of the present invention, the cooling rate at temperatures lower than 1200°C is not particularly specified, but is preferably 1.7°C/min or less in order to stabilize crystal quality. In evaluating the OSF generation characteristics and oxide film breakdown voltage of the CZ silicon single crystal subjected to the heat treatment method of the present invention, a silicon wafer manufactured by slicing from the single crystal and going through a predetermined process was subjected to high-temperature preheat treatment. Tested without. Therefore, it is clear that no DZ is formed on the CZ silicon wafer, and the method of the present invention is fundamentally different from the conventional method in terms of the principle of improving material properties. In addition, in developing the method of the present invention, the inventors newly obtained the fact that the cooling rate after high-temperature heat treatment controls the OSF characteristics and oxide film breakdown voltage of CZ silicon single crystal. In order to improve the material properties of a Cz silicon single crystal without forming a DZ as in the present invention, it is insufficient to simply maintain the temperature at a high temperature, and as shown in the example, the cooling rate must also be controlled. It has to be done. On the other hand, since the above-mentioned conventional method involves heat treatment of the wafer, it is clear that the wafer is rapidly cooled beyond the cooling rate range defined in the scope of the present invention. As mentioned above, the method of the present invention is different from conventional methods. The heat treatment apparatus of the present invention will be explained using the example shown in FIG. 1st
The figure is a sectional view showing the structure of an embodiment of the heat treatment apparatus of the present invention. In the heat treatment apparatus shown in FIG. 1, a single crystal 16 suspended in a chamber 13 is heated by a high frequency coil 18 as a heating means. High frequency coil 18
is divided into five upper and lower zones, and can be moved up and down.
A desired thermal history can be given to each part of the corresponding single unit product 16. In the heat treatment apparatus of the present invention, the heating means is preferably divided into two upper and lower zones or multiple zones, as in this embodiment, but may be of a single zone type. The mechanism for suspending the single crystal 16 consists of a chuck 15, a wire 14, and a wire winder 8, and the wire winder 8 can rotate about a vertical line. Therefore, such a heat treatment device that can rotate the single crystal 16 and move it up and down is installed at the top of the Cz silicon single crystal pulling device, as shown in FIG. The single crystal 16 may be heat treated, or an independent heat treatment device may be used. In FIG. 3, the single crystal 16 is heated by a resistance heating element 18'.
However, a high frequency heating method as shown in FIG. 1 may also be used. Further, in FIG. 3, reference numeral 20 denotes a partition section that partitions the pulling section and the heat treatment section. Using the heat treatment apparatus of the present invention, as described above, the CZ silicon single crystal is held at a temperature of 1300°C or more and 1400°C or less for 10 minutes, and then heated at 1.7°C/min from that temperature to 1200°C. By lowering the temperature at the following cooling rate, a silicon single crystal with excellent oxide film breakdown voltage characteristics and less likely to generate OSF can be obtained. The manufacturing apparatus of the present invention will be explained using the example shown in FIG. FIG. 2 is a sectional view showing the configuration of one embodiment of the manufacturing apparatus of the present invention. In the manufacturing apparatus shown in FIG.
C is grown from a seed crystal 12 suspended from a chuck 1 suspended by a wire from a melt 7 filled with C.
Z silicon single crystal 2 is pulled. A heating means 3 is attached above the single crystal 2 so as to surround the single crystal. The heating stage 3 is preferably divided into two upper and lower zones or more than one zone so that the cooling rate can be easily controlled, but it may be of a single zone type. Further, the heating means 3 may be a resistance heating element or a high frequency heating coil. The heating means 3 does not necessarily have to be cylindrical; for example, as shown in FIG. 4, it may have a structure that combines a truncated cone and a cylinder. A heating means having a shape as shown in FIG. 4 is characterized in that the cooling rate of 1300° C. or less can be easily controlled. A gas flow control plate 4 is installed around the heating means 3, and the gas supplied from the gas inlet 11 passes outside the gas flow control plate 4, with some passing around the heating means 3 and some passing through the vicinity of the heating means 3. flows around the melt 7 and is exhausted to the outside. The gas flow control plate 4 also serves as a heat shield and is designed to efficiently cool the portion of the single crystal rod 2 between the solid-liquid interface and the lower end of the gas flow control plate. A viewing window is attached to the gas flow control plate 4, and the state of the solidification interface can be observed from the upper part of the chamber 5. While growing a Cz silicon single crystal from a melt using the manufacturing apparatus of the present invention, the silicon single crystal is held at a temperature of 1300°C or more and 1400°C or less for 10 minutes or more, as described above, and then 1.7 between that temperature and 1200℃
By lowering the temperature at a cooling rate of .degree. C./min or less, a silicon single crystal with excellent oxide film breakdown voltage characteristics and less likely to generate OSF can be easily obtained. [Example] Next, an example of the present invention will be described. Example 1 Using the apparatus shown in FIG. 7, the amount of raw material melt 7 before crystal pulling was 35 to 65 kg, and the internal pressure of chamber 5 was 7.
~50sobs Argon blowing flow rate as an inert gas is set to 5~IOXIO-2N■3/l1n, C
Z silicon single crystal 2 is about 1. After growing at a growth rate of 3 sui/sin, a heat treatment method using the heat treatment apparatus shown in FIG. 1 was carried out. The CZ silicon single crystal 16 is held at a temperature of 1300°C or more and 1400°C or less for 10 minutes or more in a vacuum or an Ar atmosphere as an inert gas, and then heated from that temperature to 1200°C.
Until then, the temperature was lowered at a cooling rate of 1.7° C./min or less. For comparison with the method of the present invention, single crystals heat-treated under conditions outside the above range were also produced. Further, the heat treatment method of the present invention was carried out using the heat treatment apparatus shown in FIG. The amount of the raw material melt 7 before crystal pulling is 35 to 65 kg, and the internal pressure of the chamber 5 is 7 to 50 ib. The flow rate of argon blowing as an inert gas is 5 to 10 x 10'N. 3/a+1.
As n, Cz silicon single crystal 16 is approximately 0.9 sn/a
After pulling at a growth rate of +in, the partition 20 was opened to house the single crystal 16 in the heat treatment chamber 23, the partition 20 was closed again, and the single crystal 16 was heat treated under the conditions of the present invention described above. Wafers are cut from these single crystals and undergo oxygen donor treatment, lapping, polishing, etc.
A CZ wafer with a mirror surface on one side was fabricated by going through a process normally required for industrially manufacturing silicon wafers. The OSF generation characteristics of CZ wafers were evaluated by determining the maximum value of OSF density for each wafer according to the process shown in Table 2. Also,
As mentioned above, the oxide film breakdown voltage characteristics were determined by the process shown in Table 1.
The mode pass rate was determined and evaluated. The heat treatment conditions and material property evaluation results are shown in Table 3. By using the heat treatment apparatus of the present invention and adjusting the heat treatment conditions for the CZ silicon single crystal within the range of the present invention, an ideal silicon single crystal for devices with excellent oxide film breakdown characteristics and less likely to generate OSF was obtained. . Example 2 The heat treatment method of the present invention was carried out while manufacturing a silicon single crystal using the manufacturing apparatus shown in FIG. The amount of the raw material melt 7 before crystal pulling is 35 to 65 kg, and the chamber 5
The internal pressure is 7 to 50a+b. The flow rate of argon blowing as an inert gas is 5 to 10 x 10-2 N l3/wi.
As n, while pulling the single crystal 2, the silicon single crystal 2 is held at a temperature of 1300°C or more and 1400°C or less for 10 minutes or more, and then from that temperature to 1200°C is held for 10 minutes or more.
．． The temperature was lowered at a cooling rate of 7° C./min or less. For comparison with the method of the present invention, single-crystal rods were also produced that underwent a thermal history outside the above range. Cutting out wafers from these single crystal rods,
A CZ wafer with one side mirror-finished was fabricated through the steps normally required for industrially manufacturing silicon wafers, such as oxygen donor treatment, lapping, and polishing. The OSF generation characteristics of these CZ wafers were evaluated by determining the maximum value of OSF density for each wafer through the steps shown in Table 2. Further, the oxide film breakdown voltage characteristics were evaluated by determining the C mode pass rate using the steps shown in Table 1 as described above. Table 4 shows the heat treatment conditions and material property evaluation results. By using the manufacturing apparatus of the present invention to grow a Cz silicon single crystal and keeping the heat treatment conditions within the range of the present invention, an ideal silicon single crystal for devices with excellent oxide film breakdown characteristics and less occurrence of OSF can be obtained. was gotten. Table 1 [Effects of the Invention] As detailed above, the CZ silicon single crystal heat treatment method of the present invention produces high quality CZ silicon single crystals that have excellent oxide film breakdown characteristics and are less likely to generate oxidation-induced stacking faults. can get. In addition, by using the heat treatment apparatus of the present invention, it is possible to easily impart the thermal history specified by the method of the present invention to Cz silicon single crystals, and the oxide film characteristics or OSF generation of Cz silicon single crystals manufactured by conventional methods can be easily imparted. Either one of the characteristics
Or both can be improved. Furthermore, according to the Cz silicon single crystal manufacturing apparatus of the present invention, it is possible to pull a Cz silicon single crystal without imparting the thermal history specified by the method of the present invention, and it is possible to improve the oxide film breakdown voltage characteristics, which was difficult with conventional methods. High-quality silicon single crystals with superior properties and less oxidation-induced stacking faults can be easily obtained. The method and apparatus according to the present invention, which can easily obtain high-quality CZ silicon single crystals, contribute to the development of electronic device industries such as ICs and LSIs.

[Brief explanation of drawings]

1 and 3 are cross-sectional views showing the structure of one embodiment of the heat treatment apparatus of the present invention, and FIGS. 2 and 4 respectively show the structure of an embodiment of the silicon single crystal manufacturing apparatus of the present invention. The cross-sectional view shown in Figure 5 is an MO mounted on a silicon wafer to evaluate the oxide film breakdown voltage characteristics of a silicon single crystal.
6 is a plan view of the wafer on which MOS diodes are mounted, and FIG. 7 is a sectional view showing the structure of a conventional Czochralski method single crystal pulling apparatus. 1... Chuck, 2... CZ silicon single crystal rod, 3
... Heating means, 4... Gas flow control plate, 5... Chamber, 6... Crucible, 7... Melt, 8... Wire winder, 9... Heat insulating material, 10 ···heater
11... Gas inlet, 12... Seed crystal, 13...
Quartz glass chamber 14...Wire 15...
・Chuck, 16...Cz silicon single crystal, 17...
・Gas inlet, 18...High frequency coil, 18'...
Resistance heating element, 19...Insulating material, 20...Partition, 21...Pyrometer, 22...Peep window, 23...Chamber 24...Aluminum layer, 25...Doved polycrystalline silicon layer, 26...
Two-layer gate electrode, 27... Si02 film (gate oxide film), 28... Silicon wafer, 29 MOS diode (electrode diameter 5 mm),
30...MOS diode (electrode diameter 1, 2, 4,
6 ■ Theory ~ 31... Substrate silicon, 32... Gas outlet.

Claims (3)

[Claims] (1) Silicon single crystals grown by the Czochralski method are grown at temperatures above 1300°C in vacuum or inert gas.
1. A method for heat treatment of a silicon single crystal, which comprises maintaining the temperature at 400° C. or lower for 10 minutes or more, and then lowering the temperature from that temperature to 1200° C. at a cooling rate of 1.7° C./min or lower. (2) A mechanism for suspending and holding a silicon single crystal produced by the Czochralski method and a heating means arranged around the single crystal, and either or both of the heating means and the single crystal. 1. A heat treatment apparatus for a silicon single crystal, comprising a mechanism for vertically moving the single crystal, and a mechanism for rotating the single crystal about a vertical line. (3) In an apparatus for producing silicon single crystals using the Czochralski method, which is equipped with a crucible for heating and melting raw materials and a means for pulling silicon single crystals from the melt in the crucible, the surroundings of the pulled single crystals are 1. A silicon single crystal manufacturing apparatus, characterized in that it is provided with heating means arranged therein.