JPH038797A - Method for synthesizing diamond in vapor phase under pressure - Google Patents
Method for synthesizing diamond in vapor phase under pressureInfo
- Publication number
- JPH038797A JPH038797A JP6726590A JP6726590A JPH038797A JP H038797 A JPH038797 A JP H038797A JP 6726590 A JP6726590 A JP 6726590A JP 6726590 A JP6726590 A JP 6726590A JP H038797 A JPH038797 A JP H038797A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- vapor phase
- pressure
- vapor
- organic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 27
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 25
- 239000012808 vapor phase Substances 0.000 title claims abstract description 6
- 230000002194 synthesizing effect Effects 0.000 title claims description 5
- 238000000034 method Methods 0.000 title description 17
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 6
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000003786 synthesis reaction Methods 0.000 claims description 6
- 238000001308 synthesis method Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 abstract description 14
- 239000004215 Carbon black (E152) Substances 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 3
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 13
- 239000002994 raw material Substances 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- -1 silicon carbide Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
本発明は有機化合物の加圧蒸気中における気相成長によ
るダイヤモンドの合成法に関するものである。DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention relates to a method for synthesizing diamond by vapor phase growth of an organic compound in pressurized vapor.
「従来の技術」
従来、ダイヤモンドを合成する方法は各国で古くから研
究が為されてきているものであり、現在ではすでに以下
のような方法が見出されている。"Conventional Technology" Conventional methods for synthesizing diamonds have been researched in various countries for a long time, and the following methods have already been discovered.
仁高温高圧下で黒鉛から合成する方法。A method of synthesizing graphite from graphite under high temperature and pressure.
口、プラズマを利用した炭素のイオンビームを用いる方
法。A method that uses a carbon ion beam using plasma.
ハ、水素ガス中で黒鉛を加熱してできる活性化した炭化
水素を利用して基板上に結晶をつくる化学輸送法。C. A chemical transport method that creates crystals on a substrate using activated hydrocarbons produced by heating graphite in hydrogen gas.
二、i%!圧下で炭化水素と水素ガスの混合ガスをフィ
ラメントで活性化し、基板上に放射して結晶させる気相
合成法。Two, i%! A gas phase synthesis method in which a mixed gas of hydrocarbon and hydrogen gas is activated with a filament under pressure and radiated onto a substrate to crystallize it.
「発明が解決しようとするr4題」
従来の方法の中で最も短時間に合成を行うことができる
のは イ、の方法であり、実際にこの方法を用いて工業
的な生産が行われている。また、他の方法は時間はかか
るが格子欠陥の少ない結晶をつくることができるという
長所を有している。従ってこれらのいずれかの方法を用
いれば目的に合ったダイヤモンドを合成することは可能
である。しかしながら生産性の観点からこれらの方法を
検討すればイ、及び口、の方法は巨額の設備投資を必要
とする上長質な結晶が得に<<、ハ、の方法は原料の供
給に難点があるため効率が悪いまた、二、の方法も減圧
に伴う装置を必要とし、さらに減圧によって気体濃度が
低下して効率が悪くなるという欠点がある。``Four problems to be solved by the invention'' Among the conventional methods, method A can be synthesized in the shortest time, and industrial production has actually been carried out using this method. There is. Other methods have the advantage of being able to produce crystals with fewer lattice defects, although they are time consuming. Therefore, by using any of these methods, it is possible to synthesize diamonds that suit the purpose. However, if we consider these methods from the viewpoint of productivity, methods (a) and (i) require a huge capital investment and produce high-quality crystals, while methods (c) have difficulties in supplying raw materials. In addition, method 2 also requires equipment for reducing the pressure, and furthermore, the reduced pressure reduces the gas concentration, resulting in poor efficiency.
本発明者は以上の技術的な方法及び問題点をふまえ、工
業的に重要な資源となるダイヤモンドを常圧を含めた加
圧状態で気相合成する方法を探求し、ここに明らかにす
るものである。Based on the above technical methods and problems, the present inventor has investigated a method for vapor phase synthesis of diamond, which is an industrially important resource, under pressurized conditions including normal pressure, and hereby discloses the method. It is.
「課題を解決するための手段」
まず、本発明を実行するにあたっては図1に示す装置を
作製する。この装置は本発明の合成法に必要な基本構造
を備えたものであり、以下の4項目が主体要素となる。"Means for Solving the Problems" First, in carrying out the present invention, an apparatus shown in FIG. 1 is manufactured. This device is equipped with the basic structure necessary for the synthesis method of the present invention, and the following four items are the main elements.
(1)容器二上部に微1jXな排気口を設け、内部の気
相を常圧または加圧状態
に保つ。また、必要に、応じて原料
の供給口を設ける。(1) A fine 1x exhaust port is provided at the top of the container to maintain the internal gas phase at normal pressure or pressurized state. In addition, a feed port for raw materials is provided as necessary.
(2)加熱器二基板を赤熱状態に保つことができる程度
の出力のものを用い
、原料の有機化合物の熱分解及び
炭素の結晶化に必要なりか供給す
る。また原料の有機化合物を別途
加熱しない場合はその加熱を兼ね
る。(2) Use a heater with enough output to keep the two substrates in a red-hot state, and supply only the amount necessary for thermal decomposition of the raw organic compound and crystallization of carbon. In addition, if the organic compound as a raw material is not heated separately, it also serves as heating.
(3)基板:ダイヤモンド結晶の下地となるもので、ダ
イヤモンドを用いる
のがI%適であるが、ダイヤモンド
型構造をもつケイ素、炭化珪素等
の物質でもよい。(3) Substrate: This serves as a base for diamond crystals, and diamond is suitably used, but materials such as silicon and silicon carbide having a diamond-shaped structure may also be used.
(4)原料:炭化水素を主体とする有機化合物で、加熱
により容器内を常圧
または加圧状態の蒸気で満たす。(4) Raw material: An organic compound mainly composed of hydrocarbons, which is heated to fill the container with steam at normal pressure or pressurized state.
以上の4項目を基本構造として備えた装置に活性化ガス
の対流を防ぐ内部容器及び容器内の圧力を高める加圧器
を加えて用い、ダイヤモンドの加圧気相合成を行う。Pressurized gas phase synthesis of diamond is performed using an apparatus having the above four items as a basic structure, with the addition of an internal container to prevent convection of activated gas and a pressurizer to increase the pressure inside the container.
「作用」
上記のような構造を基本とする装置を用いると、以下の
作用によってダイヤモンドの合成が行われる。"Operation" When using an apparatus based on the above-described structure, diamond is synthesized by the following operation.
まず、(2)のヒーターが加熱を始めると熱が容器内の
空気に伝えられ、熱せられた空気は熱膨張によって排気
口から外部に排気される。空気の排気はこれだけでは十
分ではないが、原料が熱せられて蒸気になると空気はこ
れに押し出されてさらに排気され、容器内は原料の有機
化合物の蒸気で満たされる。このとき容器の排気口を十
分小さくすれば蒸気圧及び反応時に生成されるガスによ
って容器内が常圧以上の圧力に保たれ、大気が再び容器
内に侵入することはない、また、容器内の圧力は加熱に
よる原料の有機化合物の蒸気圧を利用し、加圧器を用い
ることによって加圧状態にすることもできる一h1;ダ
イヤモンドはこの圧力で減圧の必要なく十分に合成でき
るため、減圧に伴う真空装置等を用いる必要はなく、さ
らに加圧によって気体−度が高くなることにより効率が
良くなる効果が期待てきる。また、内部容器を用いるこ
とにより対流による活性化ガスと蒸気の無駄な混合を抑
えさらに加熱器の余熱により原料の表面近くを加熱する
ことによって原料自体の対流を防ぎ、蒸気圧を効率よく
高めることができる。First, when the heater (2) starts heating, the heat is transferred to the air inside the container, and the heated air is exhausted to the outside from the exhaust port due to thermal expansion. Exhausting air alone is not enough, but when the raw material is heated and turned into steam, the air is pushed out and further exhausted, filling the container with the vapor of the raw organic compound. At this time, if the exhaust port of the container is made small enough, the pressure inside the container will be maintained at above normal pressure by the vapor pressure and the gas generated during the reaction, and the atmosphere will not enter the container again. The pressure can also be increased by using a pressurizer, using the vapor pressure of the organic compound as a raw material by heating. There is no need to use a vacuum device or the like, and the efficiency can be expected to improve due to the increased gas density due to pressurization. In addition, by using an internal container, wasteful mixing of activated gas and steam due to convection is suppressed, and by heating near the surface of the raw material using residual heat from the heater, convection of the raw material itself is prevented and steam pressure is efficiently increased. I can do it.
原料の有機化合物の蒸気は熱分解反応によって徐々に消
費されていくが、消費された分は原料の表面から間断な
く供給されていき、一方で反応時の生成ガスは容器のh
部に設けた大気に通じる排気口から排出される。蒸気に
なった有機化合物は十分に加熱された下地基板に接触し
、その表面で熱によって分解して活性化ガスを生成し、
ダイヤモンド結晶の気相成長が行われる。このとき反応
に必要な熱は石墨の生成を防ぐためには下地基板からの
伝熱によってのみ与えるこ、とが必要で、さらにこの下
地基板には炭素の結晶化を促すため、ダイヤモンド構造
をもつ物質を用いる。The vapor of the raw organic compound is gradually consumed by the thermal decomposition reaction, but the consumed amount is continuously supplied from the surface of the raw material, while the gas produced during the reaction is heated to the h of the container.
It is discharged from the exhaust port that is connected to the atmosphere. The organic compound that has turned into vapor comes into contact with a sufficiently heated base substrate, and is decomposed by heat on the surface to generate activated gas.
Vapor phase growth of diamond crystals is carried out. In order to prevent the formation of graphite, it is necessary to provide the heat necessary for the reaction only through heat transfer from the base substrate, and in addition, this base substrate contains a material with a diamond structure to promote carbon crystallization. Use.
下地基板として最も適した物質はダイヤモンドであるが
、他にもダイヤモンド型構造をもつケイ素を用いること
ができ、また、単体に限らず炭化珪素等の化合物でもか
まわないが、下地基板は赤熱されるため、融点がそれ以
上の温度の物質であることが必要である。The most suitable material for the base substrate is diamond, but silicon with a diamond-shaped structure can also be used, and it is also possible to use not only a single substance but also a compound such as silicon carbide, but the base substrate is red-hot. Therefore, it is necessary that the substance has a melting point higher than that.
「実施例」
第1図の装置を使用し、(1)の容器として上部に0.
6mm径の排気口を設けた直径100mm高さ135m
mJ!さ0.2mmの鉄製円筒容器、(2)の加熱器と
して6.5mmX75mmX1.4mmX32Wのアル
ミナ系セラミック・ヒーター (3)の下地基板として
表面に鏡面仕上げを施したもの及び表面がやや粗面の6
mmX6mmX0.2mmのシリコン・チップ、(4)
の原料として濃度80%のエタノール、く10)の内部
容器として外径9mm高さ57mm厚さ1mmの鉄製円
筒容器を使用して50時間の試行を行った結果、下地基
板の表面に厚さ数um程度の薄膜状ダイヤモンドを得る
に至った。"Example" Using the apparatus shown in FIG. 1, the container (1) has a 0.
100mm in diameter and 135m in height with a 6mm diameter exhaust port.
mJ! An iron cylindrical container with a diameter of 0.2 mm, (2) a 6.5 mm x 75 mm x 1.4 mm x 32 W alumina ceramic heater as a heater, (3) a base substrate with a mirror finish on the surface, and a 6.6 with a slightly rough surface.
Silicon chips, mmX6mmX0.2mm, (4)
As a result of a 50-hour trial using an iron cylindrical container with an outer diameter of 9 mm, a height of 57 mm, and a thickness of 1 mm as an inner container for ethanol with a concentration of 80% (10) as a raw material for We have succeeded in obtaining a thin film of diamond with a thickness of approximately 100 um.
このダイヤモンドは強い分光作用を有するもので、光を
当てると青みがかった反射光を呈し、またやや粗面の基
板上に析出させたものは入射角、反射角を変えて光を当
てることにより反射光が緑、青、紫、赤、オレンジ、黄
に色変化を示す様子が観察された。This diamond has a strong spectroscopic effect, and when exposed to light, it emits a bluish reflected light, and when deposited on a slightly rough substrate, the reflected light can be seen by changing the incident and reflection angles. It was observed that the color changed to green, blue, purple, red, orange, and yellow.
「発明の効果」
本発明のダイヤモンドの加圧気相合成法により内部に不
純物や格子欠陥をほとんと含まない高品質のダイヤモン
ドの合成が可能であるという効果及び本発明によるダイ
ヤモンドの合成法を用いることによって常圧での合成が
可能になり、従来の方法に不可欠であった高圧発生装置
あるいは真空発生H置等の加減圧H置及び堅固な耐圧容
器が不要になり、これに伴う無駄なコストを削減してよ
り経済的にダイヤモンドを合成することが可能になると
いう効果、さらに加圧状態で気相合成することにより気
体濃度が高くなり、減圧下で合成する方法に比べて効率
が良くなることが期待できる効果を有する。"Effects of the Invention" The effect that high-quality diamond containing almost no internal impurities or lattice defects can be synthesized by the pressurized vapor phase synthesis method of diamond of the present invention, and the use of the diamond synthesis method of the present invention This makes it possible to synthesize at normal pressure, eliminating the need for high-pressure generators, vacuum generators, etc., and solid pressure-resistant containers, which are essential to conventional methods, and eliminates unnecessary costs associated with this. The effect is that diamond can be synthesized more economically by reducing the amount of carbon used, and gas phase synthesis under pressure increases the gas concentration, making it more efficient than synthesis under reduced pressure. has the expected effect.
第1図は合成装置の縦断面図である。
l、容器、2.加熱器、3.基板、4.原料、5.電源
、6.絶縁プラグ、7.加圧器8、排気口、9.止めね
じ、10.内部容器。FIG. 1 is a longitudinal sectional view of the synthesis apparatus. l, container, 2. Heater, 3. Substrate, 4. Raw materials, 5. Power supply, 6. Insulated plug, 7. Pressurizer 8, exhaust port, 9. Set screw, 10. inner container.
Claims (1)
気中でダイヤモンド型構造をもつ物質を加熱し、その表
面にダイヤモンドの結晶を気相成長させてダイヤモンド
を合成する方法。 2、請求項1記載の合成法を用いてダイヤモンドの合成
を行うための基本構造を備えた装置。[Claims] 1. Synthesis of diamond by heating a substance with a diamond-shaped structure in normal pressure or pressurized steam of an organic compound mainly composed of hydrocarbons, and growing diamond crystals on its surface in a vapor phase. how to. 2. An apparatus having a basic structure for synthesizing diamond using the synthesis method according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6726590A JPH038797A (en) | 1989-03-24 | 1990-03-19 | Method for synthesizing diamond in vapor phase under pressure |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1-70499 | 1989-03-24 | ||
| JP7049989 | 1989-03-24 | ||
| JP6726590A JPH038797A (en) | 1989-03-24 | 1990-03-19 | Method for synthesizing diamond in vapor phase under pressure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH038797A true JPH038797A (en) | 1991-01-16 |
Family
ID=26408444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6726590A Pending JPH038797A (en) | 1989-03-24 | 1990-03-19 | Method for synthesizing diamond in vapor phase under pressure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH038797A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5367787A (en) * | 1992-08-05 | 1994-11-29 | Sanyo Electric Co., Ltd. | Drying machine |
| US8048773B2 (en) | 2009-03-24 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
-
1990
- 1990-03-19 JP JP6726590A patent/JPH038797A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5367787A (en) * | 1992-08-05 | 1994-11-29 | Sanyo Electric Co., Ltd. | Drying machine |
| US8048773B2 (en) | 2009-03-24 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
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