JPH03212905A - Formation of thin film resistor - Google Patents

Abstract

PURPOSE:To restrain volatilization of a film and to acquire good resistance characteristics by burning a thin film containing metallic oxide containing Ru in an atmosphere containing a specified amount of water vapor. CONSTITUTION:A metallic oxide containing Ru is burnt in an atmosphere containing water vapor under 5vol.% to form a thin film resistor. As the metallic oxide containing Ru, oxide Ru or a mixture of oxide Ru and other metallic oxide can be used. As other metallic oxides, an oxide of Co, Pb, Si, Ba, etc., or glass, etc., can be used. Less water vapor restrains volatilization of a film. Burning can be carried out in an inert atmosphere containing water vapor under 5vol.%. As an inert atmosphere, N2, Ar, Co2, etc., can be used.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for forming thin film resistors used in various electronic devices.

2. Description of the Related Art Conventionally, various types of resistors have been essential in various electronic devices. Among these, ruthenium-based resistors using metal oxides containing ruthenium are used as resistors in integrated circuits and heating elements in thermal printer heads.

Vacuum deposition, CVD, sputtering, thermal decomposition, and the like are used to manufacture these ruthenium-based thin film resistors.

Problem to be Solved by the Invention The problem is that when the ruthenium-based thin film resistor manufactured by the above manufacturing method is heated, the film volatizes, resulting in a decrease in film thickness and deterioration of characteristics such as resistance value and temperature coefficient of resistance. have.

In view of these problems, it is an object of the present invention to provide a method for forming a thin film resistor with good characteristics by suppressing film volatilization.

Means for Solving the Problems In order to solve this problem, the present invention provides a metal oxide thin film containing ruthenium in an atmosphere containing less than 1% water vapor by 5 vol, or in an inert atmosphere containing less than 1% water vapor by 5 vol. It is used for firing.

Effect: By using the means of the present invention described above, volatilization of the film can be suppressed and a thin film resistor with good characteristics can be provided.

Example Examples of the present invention will be described below.

In an atmosphere containing less than 1% water vapor,
Alternatively, it is characterized in that a metal oxide thin film containing ruthenium is fired in an inert atmosphere containing less than 1% water vapor.

Examples of the metal oxide thin film containing ruthenium used in the present invention include ruthenium oxide, a mixture of ruthenium oxide and other metal oxides, and the like. Examples of other metal oxides include oxides of cobalt, lead, silicon, barium, etc., and glass.

The reason why the water vapor concentration is less than 5vo 1% is because if it is more than that, the film will volatilize.

In addition, the closer the water vapor concentration is to 0, the more effective it is in suppressing volatilization.
Since the fruits are large, less is better.

As the inert atmosphere, any atmosphere such as nitrogen, argon, carbon dioxide, etc. can be selected.

Specific examples will be described below.

Compound A (ruthenium octylate) and compound B (a mixture of ruthenium octylate and lead octylate in a molar ratio of 1=1) are each dissolved in a hydrocarbon solvent,
It is applied onto a quartz glass substrate, dried, and heated to form a film of ruthenium oxide from the A compound and lead ruthenate, which is a metal oxide containing ruthenium, from the B compound. Table 1 shows the results of heat treatment at 700° C. for 30 minutes in an electric furnace with adjusted water vapor concentration and atmosphere.

Regarding the volatilization items in Table 1, those that do not volatilize are ○, those that volatilized and the film disappeared are ×1, and those that were volatilized but the film remained are △
And so.

As shown in Table 1, it can be seen that the smaller the amount of water vapor added, the less volatilization of the film and the smaller the increase in resistance value. Furthermore, it can be seen that in an inert atmosphere, volatilization is further reduced and the increase in resistance value is small.

(Left below) Effects of the Invention As can be seen from the examples, the method for forming a thin film resistor of the present invention has less volatilization during heating and a reduction in film thickness and resistance compared to conventional thin film resistors. It is possible to provide a thin film resistor with little change in characteristics such as value, which has great industrial effects.

Claims (2)

[Claims] (1) A method for forming a thin film resistor, in which a metal oxide thin film containing ruthenium is fired in an atmosphere containing less than 5 vol% of water vapor. (2) The method for forming a thin film resistor according to claim 1, wherein the metal oxide thin film containing ruthenium is fired in an inert atmosphere containing less than 5 vol% of water vapor.