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JPH03202816A - Optical control device and production thereof - Google Patents

Optical control device and production thereof

Info

Publication number
JPH03202816A
JPH03202816A JP34453589A JP34453589A JPH03202816A JP H03202816 A JPH03202816 A JP H03202816A JP 34453589 A JP34453589 A JP 34453589A JP 34453589 A JP34453589 A JP 34453589A JP H03202816 A JPH03202816 A JP H03202816A
Authority
JP
Japan
Prior art keywords
electrode
buffer layer
gratings
optical waveguide
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP34453589A
Other languages
Japanese (ja)
Other versions
JPH0743486B2 (en
Inventor
Hisao Kawashima
川島 比佐夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP34453589A priority Critical patent/JPH0743486B2/en
Publication of JPH03202816A publication Critical patent/JPH03202816A/en
Publication of JPH0743486B2 publication Critical patent/JPH0743486B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/31Digital deflection, i.e. optical switching
    • G02F1/313Digital deflection, i.e. optical switching in an optical waveguide structure
    • G02F1/3132Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

PURPOSE:To decrease the influence of the strain after patterning and to obtain desired branching characteristics by forming electrode film gratings and buffer layer gratings in the prescribed positions near control electrodes at the time of electrode patterning. CONSTITUTION:Optical waveguides 2, 3 are provided on a lithium niobate crystal substrate 1. A buffer layer 6 and the control electrodes 5 are formed thereon. The electrode film gratings 10 are formed of the same material as the material of the electrodes 5 at the time of the electrode formation. In addition, the buffer layer gratings 11 are formed of the same material as the material of the buffer layer 6 between the control electrodes 5 and the electrode film gratings 10 at the same width as the width of the optical waveguides 2, 3 and the same spacing as the size of a directional coupler 4 after forming of the gratings 10. The electrode films 10 are left like the gratings in such a manner, by which the concn. of the strains at the time of the formation of the electrode films is dispersed to the respective gratings. The strains on the buffer layers are dispersed by allowing the buffer layer to remain in the form of the gratings.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は光波の変調、光路切換え等を行なう光制御デバ
イスに関し、特に基板中に形成された光導波路を用いて
制御を行なう導波形の光制御デバイスとその製造方法に
関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an optical control device that modulates light waves, switches optical paths, etc., and particularly relates to a waveguide type optical device that performs control using an optical waveguide formed in a substrate. This invention relates to a control device and its manufacturing method.

〔従来の技術〕[Conventional technology]

光通信システムの実用化が進むにつれ、さらに大容量や
多機能をもつ高度のシステムが求められており、より高
速の光信号の発生や光伝送路の切換え、交換等の新たな
機能の付加が必要とされている。現在の実用システムで
は光信号は直接半導体レーザや発光ダイオードの注入電
流を変調することによって得られているが、直接変調で
は緩和振動等の効果のため数GHz以上の高速変調が難
しいこと、波長変動が発生するためコヒーレント光伝送
方式には適用が難しいこと等の欠点がある。
As the practical use of optical communication systems progresses, advanced systems with higher capacity and multiple functions are required, and new functions such as generation of faster optical signals and switching and switching of optical transmission lines are required. is necessary. In current practical systems, optical signals are obtained by directly modulating the injection current of semiconductor lasers or light emitting diodes, but with direct modulation, high-speed modulation of several GHz or more is difficult due to effects such as relaxation oscillation, and wavelength fluctuations Since this occurs, the coherent optical transmission method has drawbacks such as difficulty in application.

これを解決する手段としては、外部光変調器を使用する
方法があり、特に基板中に形成した光導波路により構成
した導波形の光変調器は、小形、高効率、高速という特
長がある。一方、光伝送路の切換えやネットワークの交
換機能を得る手段としては光スィッチが使用される。現
在実用されている光スィッチは、プリズム、ミラー、フ
ァイバー等を機械的に移動させるものであり、低速であ
ること、信頼性が不十分であること、形状が大きくマト
リクス化に不適であること等の欠点がある。
One way to solve this problem is to use an external optical modulator. In particular, a waveguide type optical modulator constructed from an optical waveguide formed in a substrate has the advantage of being small, highly efficient, and fast. On the other hand, an optical switch is used as a means for switching optical transmission lines and providing network switching functions. Optical switches currently in use mechanically move prisms, mirrors, fibers, etc., and are slow, unreliable, and large in size and unsuitable for matrix formation. There are drawbacks.

これを解決する手段として開発が進められているものは
、やはり光導波路を用いた導波形の光スィッチであり、
高速、多素子の集積化が可能、高信頼等の特長がある。
What is being developed as a means to solve this problem is a waveguide type optical switch using an optical waveguide.
It has features such as high speed, ability to integrate multiple elements, and high reliability.

特にニオブ酸リチウム(LiNb03)結晶等の強誘電
体材料を用いたものは、光吸収が小さく低損失であるこ
と、大きな電気光学効果を有しているため高効率である
等の特長があり、従来からも方向性結合形光変調器また
はスイッチ、全反射形光スイッチ等の種々の方式の光制
御素子が報告されている(C205昭63信学会秋季全
国大会)。このような導波形の光制御素子を実際の光通
信システムに適用する場合、低損失、高速性等の基本的
性能と共に、特に動作の安定性が実用上不可欠である。
In particular, those using ferroelectric materials such as lithium niobate (LiNb03) crystals have features such as low light absorption and low loss, and high efficiency because they have a large electro-optic effect. Light control elements of various types, such as directional coupling type optical modulators or switches, and total reflection type optical switches, have been reported in the past (C205 Autumn National Conference of the Institute of Electronics Engineers of Japan, 1986). When such a waveguide-type optical control element is applied to an actual optical communication system, basic performance such as low loss and high speed, as well as particularly operational stability, are practically essential.

第3図・(a)は従来の一例を示す方向性結合型光スィ
ッチの平面図、第3図(b)は第3図(a)におけるB
−B線断面図である。
Figure 3 (a) is a plan view of a conventional directional coupling type optical switch, and Figure 3 (b) is the B in Figure 3 (a).
-B sectional view.

第3図(a)においてZ軸に垂直に切り出したニオブ酸
リチウム結晶基板1の上にチタンを拡散して屈折率を基
板よりも大きくして形成した帯状の光導波路2及び3が
形成されており、光導波路2及び3は基板の中央部で互
いに数μm程度まで近接し、方向性結合器4を構成して
いる。また、方向性結合器4を構成する光導波路上には
電極による光吸収を防ぐためのバッファ膜6を介して制
御電極5が形成されている。
In FIG. 3(a), band-shaped optical waveguides 2 and 3 are formed by diffusing titanium on a lithium niobate crystal substrate 1 cut out perpendicularly to the Z axis to have a refractive index larger than that of the substrate. The optical waveguides 2 and 3 are close to each other within a few μm at the center of the substrate, and constitute a directional coupler 4. Furthermore, a control electrode 5 is formed on the optical waveguide constituting the directional coupler 4 via a buffer film 6 for preventing light absorption by the electrode.

第3図(a>において、光導波路2に入射した入射光7
は方向性結合器4の部分を伝搬するに従って近接した光
導波路3へ徐々に光エネルギーが移り、方向性結合器4
を通過後は光導波路3にほぼ100%エネルギーが移っ
て出射光8となる。
In FIG. 3 (a), incident light 7 that has entered the optical waveguide 2
As it propagates through the directional coupler 4, the optical energy gradually transfers to the adjacent optical waveguide 3, and the directional coupler 4
After passing through, almost 100% of the energy is transferred to the optical waveguide 3 and becomes the output light 8.

一方、制御電極5に電圧を印加した場合、電気光学効果
により電極下の光導波路の屈折率が変化し、光導波路2
と3を伝搬する導波モードの間に位相速度の不整合が生
じ、両者の間の結合状態は変化する。
On the other hand, when a voltage is applied to the control electrode 5, the refractive index of the optical waveguide under the electrode changes due to the electro-optic effect, and the optical waveguide 2
A phase velocity mismatch occurs between the waveguide modes propagating in and 3, and the coupling state between them changes.

一般に、制御電極5は電極膜の成膜後にマスクを用いて
光導波路2,3上に電極が来るようにパターニングし、
その後、エツチングして形成する。
Generally, the control electrode 5 is patterned using a mask after forming an electrode film so that the electrode is placed on the optical waveguides 2 and 3.
After that, it is formed by etching.

ここでバッファ膜6及び電極膜の成膜時に発生する歪が
電極膜のエツチングによって制御IE[!近傍に不均一
に残存する。この歪は先導波路2.3の近傍にまで及ん
で導波路特性を変化させ、その結果方向性結合器4の結
合状態も変化させてしまう。
Here, the strain generated during the formation of the buffer film 6 and the electrode film is controlled by etching the electrode film. Remains unevenly in the vicinity. This distortion extends to the vicinity of the leading waveguide 2.3 and changes the waveguide characteristics, resulting in a change in the coupling state of the directional coupler 4.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の導波形の光制御デバイスでは、エツチン
グによって電極及び光導波路の近傍に成膜型が不均一に
局在して導波路特性と結合状態とを変化させる。その変
化量は電極膜の成膜バッチごとに変化の差かあるばかり
でなく、同一の電極成膜バッチ内においても1ウエハ内
に複数形成した方向性結合器で個々に異なる傾向にある
ため、導波路形成時に有していた結合状態が電極エツチ
ング後に、各方向性結合器で変化し、設計どおりの結合
状態が安定して得られないという欠点があった。
In the above-mentioned conventional waveguide type optical control device, etching causes the film formation type to be unevenly localized in the vicinity of the electrode and the optical waveguide, thereby changing the waveguide characteristics and the coupling state. The amount of change not only varies from electrode film formation batch to electrode film formation batch, but also tends to vary among multiple directional couplers formed on one wafer even within the same electrode film formation batch. There was a drawback that the coupling state that existed when the waveguide was formed changed in each directional coupler after electrode etching, making it impossible to stably obtain the coupling state as designed.

〔課題を解決するための手段〕[Means to solve the problem]

第1の発明の光制御デバイスは、電気光学効果を有する
誘電体結晶基板に形成された光導波路と、この光導波路
上に形成されたバッファ層と、このバッファ層上に且つ
前記光導波路の近傍に形成された1!極と、この電極と
同一材料により前記電極近傍に形成した電極膜格子と、
前記バッファ層と同一材料により前記電極膜格子と前記
電極との間に形成したバッファ層格子とを備えることを
特徴とする。
The optical control device of the first invention includes an optical waveguide formed on a dielectric crystal substrate having an electro-optic effect, a buffer layer formed on the optical waveguide, and an optical waveguide formed on the buffer layer and in the vicinity of the optical waveguide. 1 formed in! a pole; an electrode film lattice formed near the electrode using the same material as the electrode;
The present invention is characterized by comprising a buffer layer lattice formed between the electrode film lattice and the electrode and made of the same material as the buffer layer.

また第2の発明の光制御デバイスの製造方法は、電気光
学効果を有する誘電体結晶基板に光導波路を形成し、前
記光導波路上にバッファ層を形成し、このバッファ層上
に且つ前記光導波路の近傍に電極を形成し、この電極形
成時にt極近傍にt極膜格子をパターニングし、前記電
極と前記電極膜格子との間の領域にバッファ層格子をエ
ツチングによって形成することを特徴とする。
Further, in the method for manufacturing an optical control device according to the second invention, an optical waveguide is formed on a dielectric crystal substrate having an electro-optic effect, a buffer layer is formed on the optical waveguide, and the optical waveguide is formed on the buffer layer and on the optical waveguide. An electrode is formed near the electrode, a t-pole film lattice is patterned near the t-pole when the electrode is formed, and a buffer layer lattice is formed by etching in a region between the electrode and the electrode film lattice. .

〔作用〕[Effect]

一般に、成膜時に有していた歪量は誘電体結晶基板上の
任意の位置の近傍では均一とみなせる。
Generally, the amount of strain during film formation can be considered to be uniform near any position on the dielectric crystal substrate.

その結果、成膜の前後において誘電体結晶基板及び光導
波路の屈折率が変化しても、光導波路と誘電体結晶基板
との屈折率差は変化しない。従って、方向性結合器の結
合状態も成膜の前後で変化しないため、先導波路を誘電
体結晶基板に形成したときの結合状態を保存している。
As a result, even if the refractive indexes of the dielectric crystal substrate and the optical waveguide change before and after film formation, the difference in refractive index between the optical waveguide and the dielectric crystal substrate does not change. Therefore, since the coupling state of the directional coupler does not change before and after film formation, the coupling state when the leading waveguide is formed on the dielectric crystal substrate is preserved.

しかし、制御電極を形成するために、光導波路の方向性
結合器の近傍にのみ電極膜にパターニング、エツチング
を施して残すと、制御電極位置の近傍に均一に分布して
いた歪量はエツチングにより除去された部分の戒膜歪が
制御電極位置の近傍に不均一に集中するため、方向性結
合器の各部分での結合状態を変化させてしまう。その結
果、方向性結合器の一方の光導波路から光を入射した際
、方向性結合器をその光が通過した後にもう一方の先導
波路に移動するように誘電体結晶基板上に形成した方向
性結合器の特性は、制御電極形成後に方向性結合器各部
分での結合状態の変化を総合した影響を受けるため変化
してしまう。
However, if the electrode film is patterned and etched only in the vicinity of the directional coupler of the optical waveguide to form the control electrode, the amount of strain that was uniformly distributed in the vicinity of the control electrode position will be reduced due to etching. Since the membrane distortion of the removed portion is unevenly concentrated in the vicinity of the control electrode position, the coupling state in each portion of the directional coupler changes. As a result, the directionality formed on the dielectric crystal substrate is such that when light enters from one optical waveguide of the directional coupler, the light passes through the directional coupler and then moves to the other leading waveguide. The characteristics of the coupler change after the control electrode is formed because they are affected by the combined changes in the coupling state in each part of the directional coupler.

本発明は、電極膜エツチング時に電極膜を格子状に残す
ことにより、除去した電極膜が有していた成膜歪の集中
を各格子に分散させることができる。さらにその後、制
御電極近傍上のバッファ層を格子状に残すことにより、
制御電極に残った歪量のために制御を極近傍のバッファ
層上に形成された歪を分散させることができる。電極膜
による格子は制御を極に近づくにつれてスイッチング立
上がり特性が悪くなるので近づけることはできない。そ
こで本発明では、制御電極に集中した歪によりバッファ
層に発生した不均一な歪を低減するために、電極膜によ
って形成した格子と制御電極との間のバッファ層をエツ
チングしている。
In the present invention, by leaving the electrode film in a lattice shape during electrode film etching, the concentration of film formation strain that the removed electrode film had can be dispersed to each lattice. Furthermore, by leaving the buffer layer near the control electrode in a grid pattern,
Due to the amount of strain remaining in the control electrode, it is possible to disperse the strain formed on the buffer layer in the immediate vicinity of the control electrode. Grids made of electrode films cannot be controlled close to the poles because the switching start-up characteristics deteriorate as the control approaches the poles. Therefore, in the present invention, the buffer layer between the control electrode and the grid formed by the electrode film is etched in order to reduce the non-uniform strain generated in the buffer layer due to the strain concentrated on the control electrode.

〔実施例〕〔Example〕

次に、本発明について第1図、第2図を参照して説明す
る。
Next, the present invention will be explained with reference to FIGS. 1 and 2.

第1図(a)は本発明の一実施例を示す方向性結合型光
スィッチの平面図、第1図(b)は第1図(a)におけ
るA−A線断面図、第2図は第1図及び第3図における
TEモード光に対する電極パターニング前後の分岐比変
化を示す図である。
FIG. 1(a) is a plan view of a directional coupling type optical switch showing one embodiment of the present invention, FIG. 1(b) is a sectional view taken along line A-A in FIG. 1(a), and FIG. FIG. 4 is a diagram showing changes in branching ratio before and after electrode patterning for TE mode light in FIGS. 1 and 3; FIG.

第1図に示すように、本実施例はZカットのニオブ酸リ
チウム結晶板1の上にチタンを900〜1100℃で数
時間熱拡散して深さ3〜10μmの光導波路2.3を形
成する。光導波路2.3は基板の中央部で互いに数μm
まで近接して方向性結き器4を構成している。その上に
バッファ層6を介して制御電極5を形成する。さらに制
御電極を形成する工程で制御電極5と同一材料で電極膜
格子10を同時に形成する。このt極膜格子10は制御
電極5から約70μmMれた位置から制御電極5の寸法
と同一の幅及び間隔で、制御電極5の長さ方向と平行に
形成している。二の電極膜格子)0の形成後、バ・ソフ
ァ層6と同一材料でバッファ層格子11を形成する。こ
のバッファ層格子11は制御電極5と制御電極5から1
00μm離れたtVi膜格子10との間の領域に、光導
波路2゜3の幅と同一の幅と、方向性結合器4の寸法と
同じ間隔で、制御電極5の長さ方向と平行に形成してい
る。
As shown in FIG. 1, in this example, titanium is thermally diffused on a Z-cut lithium niobate crystal plate 1 at 900 to 1100°C for several hours to form an optical waveguide 2.3 with a depth of 3 to 10 μm. do. The optical waveguides 2.3 are located several μm apart from each other in the center of the substrate.
The directional coupler 4 is constructed by being close to each other. A control electrode 5 is formed thereon with a buffer layer 6 interposed therebetween. Furthermore, in the step of forming the control electrode, an electrode film grid 10 is formed simultaneously with the control electrode 5 and the same material. This t-pole film lattice 10 is formed parallel to the length direction of the control electrode 5 with the same width and spacing as the dimensions of the control electrode 5 from a position approximately 70 μm away from the control electrode 5. After forming the second electrode film grid 0, a buffer layer grid 11 is formed of the same material as the buffer layer 6. This buffer layer grid 11 has a control electrode 5 and a control electrode 5 to 1
A control electrode 5 is formed parallel to the length direction of the control electrode 5 in the region between the tVi film grating 10 and the tVi film grating 10 00 μm apart, with the same width as the width of the optical waveguide 2.3 and the same spacing as the dimension of the directional coupler 4. are doing.

上記の工程により製造した本実施例の光制御デバイスで
は、第2図に実線で図示したように電極パターニング前
後における方向性結合器4の分岐比PI / (P 1
+Pz )の変化が従来例のもの(破線図示)より著し
く小さいことがわかる。この効果は、例えば制御電極に
電圧を印加した時の分岐比変化、すなわちスイッチング
特性を測定すると、従来の電極パターニング形状では1
0V以上の電圧シフト量を持っていたのに対し、本実施
例では0.5 V以下の電圧シフト量となってあられれ
る。
In the optical control device of this example manufactured by the above process, the branching ratio PI / (P 1
It can be seen that the change in +Pz) is significantly smaller than that of the conventional example (indicated by the broken line). For example, when measuring the branching ratio change when voltage is applied to the control electrode, that is, the switching characteristic, this effect is found to be 1.
While the voltage shift amount was 0V or more, in this embodiment, the voltage shift amount is 0.5V or less.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、電極パターニング時に制
御電極と同一の材料で制御電極の近傍に電極膜格子を形
成し、その後、制御電極と電極膜格子との間にバッファ
層格子を形成することにより、電極パターニング後の方
向性結合器への歪の影響を低減することができるので、
設計どおりの特性が安定して得られるという効果がある
As explained above, the present invention involves forming an electrode film lattice near the control electrode using the same material as the control electrode during electrode patterning, and then forming a buffer layer lattice between the control electrode and the electrode film lattice. As a result, the influence of distortion on the directional coupler after electrode patterning can be reduced.
This has the effect of stably obtaining the characteristics as designed.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)は本発明の一実施例を示す方向性結合型光
スィッチの平面図、第1図(b)は第1図(a)におけ
るA−A線断面図、第2図は第1図及び第3図における
TEモード光に対する電極パターニング前後の分岐比変
化を示す図、第3図(a)は従来の一例を示す方向性結
合型光スィッチの平面図、第3図(b)は第3図(a)
におけるB−B線断面図である。 1・・・ニオブ酸リチウム結晶基板、2,3・・・光導
波路、4・・・方向性結合器、5・・・制御電極、6・
・・バッファ層、7・・・入射光、8.9・・・出射光
、10・・・電極膜格子、11・・・バッファ層格子。
FIG. 1(a) is a plan view of a directional coupling type optical switch showing one embodiment of the present invention, FIG. 1(b) is a sectional view taken along line A-A in FIG. 1(a), and FIG. Figures 1 and 3 show changes in branching ratio before and after electrode patterning for TE mode light; Figure 3 (a) is a plan view of a conventional directional coupling type optical switch; Figure 3 (b) ) is shown in Figure 3(a)
It is a BB sectional view in . DESCRIPTION OF SYMBOLS 1... Lithium niobate crystal substrate, 2, 3... Optical waveguide, 4... Directional coupler, 5... Control electrode, 6...
... Buffer layer, 7... Incident light, 8.9... Outgoing light, 10... Electrode film lattice, 11... Buffer layer lattice.

Claims (2)

【特許請求の範囲】[Claims] (1)電気光学効果を有する誘電体結晶基板に形成され
た光導波路と、この光導波路上に形成されたバッファ層
と、このバッファ層上に且つ前記光導波路の近傍に形成
された電極と、この電極と同一材料により前記電極近傍
に形成した電極膜格子と、前記バッファ層と同一材料に
より前記電極膜格子と前記電極との間に形成したバッフ
ァ層格子とを備えることを特徴とする光制御デバイス。
(1) an optical waveguide formed on a dielectric crystal substrate having an electro-optic effect, a buffer layer formed on this optical waveguide, and an electrode formed on this buffer layer and in the vicinity of the optical waveguide; Optical control characterized by comprising an electrode film lattice formed near the electrode using the same material as the electrode, and a buffer layer lattice formed between the electrode film lattice and the electrode using the same material as the buffer layer. device.
(2)電気光学効果を有する誘電体結晶基板に光導波路
を形成し、前記光導波路上にバッファ層を形成し、この
バッファ層上に且つ前記光導波路の近傍に電極を形成し
、この電極形成時に電極近傍に電極膜格子をパターニン
グし、前記電極と前記電極膜格子との間の領域にバッフ
ァ層格子をエッチングによって形成することを特徴とす
る光制御デバイスの製造方法。
(2) Forming an optical waveguide on a dielectric crystal substrate having an electro-optic effect, forming a buffer layer on the optical waveguide, forming an electrode on the buffer layer and near the optical waveguide, and forming the electrode. 1. A method of manufacturing a light control device, comprising: patterning an electrode film lattice near the electrode, and forming a buffer layer lattice by etching in a region between the electrode and the electrode film lattice.
JP34453589A 1989-12-28 1989-12-28 Optical control device and manufacturing method thereof Expired - Lifetime JPH0743486B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34453589A JPH0743486B2 (en) 1989-12-28 1989-12-28 Optical control device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34453589A JPH0743486B2 (en) 1989-12-28 1989-12-28 Optical control device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH03202816A true JPH03202816A (en) 1991-09-04
JPH0743486B2 JPH0743486B2 (en) 1995-05-15

Family

ID=18370030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34453589A Expired - Lifetime JPH0743486B2 (en) 1989-12-28 1989-12-28 Optical control device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPH0743486B2 (en)

Also Published As

Publication number Publication date
JPH0743486B2 (en) 1995-05-15

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