JPH03200100A - X-ray microscope - Google Patents
X-ray microscopeInfo
- Publication number
- JPH03200100A JPH03200100A JP1343676A JP34367689A JPH03200100A JP H03200100 A JPH03200100 A JP H03200100A JP 1343676 A JP1343676 A JP 1343676A JP 34367689 A JP34367689 A JP 34367689A JP H03200100 A JPH03200100 A JP H03200100A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- photoconductive layer
- sample
- latent image
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 claims abstract description 30
- 230000005540 biological transmission Effects 0.000 claims abstract description 4
- 108091008695 photoreceptors Proteins 0.000 claims description 22
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 230000004304 visual acuity Effects 0.000 abstract 1
- 239000000523 sample Substances 0.000 description 24
- 238000003384 imaging method Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000012472 biological sample Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野J
この発明はX線顕微鏡に関するものであり、特に、感度
並びに分解能を向上したX線顕微鏡に関するものである
。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application J This invention relates to an X-ray microscope, and particularly to an X-ray microscope with improved sensitivity and resolution.
[従来の技術]
従来のX線顕微鏡は密着型、結像型並びに走査型に分類
される。又、線源としてはシンクロトロン或はマイクロ
フォーカスX線管が使用され、密着型或は結像型に使用
する感光材としては銀塩フィルム又はX線感光性高分子
材料を用いている。[Prior Art] Conventional X-ray microscopes are classified into contact types, imaging types, and scanning types. A synchrotron or a microfocus X-ray tube is used as a radiation source, and a silver salt film or an X-ray-sensitive polymer material is used as a photosensitive material for the contact type or imaging type.
前記密着型のものは試料を感光材に密着し、X線を照射
して密着像を形成する。そして、現像後に前記密着像を
電子顕微鏡等にて拡大観察している。又、結像型XI!
顕微鏡は微小域に集束したX線源と感光材或は光電面の
間に試料をおき、試料の拡大像を得る。そして、前記光
電面にて光電変換するか、或は前記感光材を現像し電子
顕微鏡にて拡大観察する。In the contact type, a sample is brought into close contact with a photosensitive material and X-rays are irradiated to form a contact image. After development, the close contact image is observed under magnification using an electron microscope or the like. Also, imaging type XI!
A microscope places a sample between an X-ray source focused in a minute area and a photosensitive material or photocathode, and obtains an enlarged image of the sample. Then, photoelectric conversion is performed on the photocathode, or the photosensitive material is developed and observed under magnification using an electron microscope.
走査型xi顕微鏡は集束したX線ビームで直接試料を走
査し、該試料の背面側に設置したX線検出器にて透過X
線を検出し、電子的に拡大像をj与るもの等が知られて
いる。A scanning xi microscope directly scans a sample with a focused X-ray beam, and an X-ray detector installed on the back side of the sample detects the transmitted
There are known devices that detect lines and electronically provide an enlarged image.
[発明が解決しようとする課題]
前述した従来のX線顕微鏡の分解能は50〜100゜0
00人であり、密着型のものが最も高い分解能を有して
いる。然し、該密着型のものは撮影時の露光に長時間を
要し、且つ、現像処理を必要とするため画像をリアルタ
イムに観察できず、又、元素分布像を画像化できないと
いう欠点がある。一方、結像型のものは画像のデジタル
化並びに元素分布像の画像化対応に困難性を有するとと
もに、分解能は光学顕微鏡と同程度に止まっている。そ
して、密着型或は結像型のものに使用するX線感光体の
感度や、走査型の真空チャンバ内に試料を設置する構造
等の理由によって、生体試料をリアルタイムに観察する
ことは不可能であり、上述した分解能の問題とともにX
線顕微鏡の適用範囲に限界を生じている。[Problem to be solved by the invention] The resolution of the conventional X-ray microscope described above is 50 to 100°.
00 people, and the close-contact type has the highest resolution. However, the close-contact type requires a long time for exposure during photographing and also requires development processing, so it has disadvantages in that images cannot be observed in real time and elemental distribution images cannot be imaged. On the other hand, the imaging type has difficulty in digitizing images and imaging element distribution images, and its resolution remains at the same level as an optical microscope. However, it is impossible to observe biological samples in real time due to the sensitivity of the X-ray photoreceptor used in contact type or imaging type, and the structure of placing the sample in a scanning type vacuum chamber. , and along with the resolution problem mentioned above,
There are limits to the scope of application of line microscopes.
そこで、感度並びに分解能を向上し、応用範囲を拡大し
た高性能のxfI!顕微鏡を提供するために解決せられ
るべき技術的課題が生じてくるのであり、本発明は該課
題を解決することを目的とする。Therefore, the high-performance xfI! has improved sensitivity and resolution and expanded the range of applications! A technical problem arises that must be solved in order to provide a microscope, and the present invention aims to solve this problem.
[課題を解決するための手段]
この発明は上記課題を解決するために提案せられたもの
であり、試料のX線透過像を撮影する電子写真感光体を
X線源に対向して配設し、該電子写真感光体の他面に対
峙して走査型電子ビーム放射器を設け、且つ、該電子写
真感光体の光導電層から放出される2次電子を検出する
2次電子検出器を配設し、該2次電子検出器の出力を画
像に変換する制御部を設けたことを特徴とするX線顕微
鏡を提供せんとするものである。[Means for Solving the Problems] This invention has been proposed to solve the above problems, and includes an electrophotographic photoreceptor that takes an X-ray transmission image of a sample and is arranged facing an X-ray source. A scanning electron beam radiator is provided opposite to the other surface of the electrophotographic photoreceptor, and a secondary electron detector is provided to detect secondary electrons emitted from the photoconductive layer of the electrophotographic photoreceptor. An object of the present invention is to provide an X-ray microscope characterized in that it is provided with a control section for converting the output of the secondary electron detector into an image.
[作用]
この発明は、X線源に対向して電子写真感光体を配置し
ている。該電子写真感光体の光導電性半導体膜にて形成
した光導電層を均一に静電帯電させて、前記XIa源と
の間に試料を置き、X線を照射すると前記光導電層には
前記試料のX線透過像が静電潜像として記録される。そ
して、撮影中或は撮影後に前記電子写真感光体の他面側
に配設した鏡筒が放射する電子ビームによって前記光導
電層の表面を走査する。このとき、電子ビーム照射スポ
ットから該照射スポットの潜像電位に見合った量の2次
電子が放出される。該2次電子■は前記光導電層の近傍
に設けた2次電子検出器によって検出され、前記2次電
子量から潜像電位が間接的に測定される。そして、前記
2次電子検出器の出力は制御部を介して映像信号に変換
されCRTにてリアルタイムに画像化される。[Function] In the present invention, an electrophotographic photoreceptor is disposed facing an X-ray source. A photoconductive layer formed of a photoconductive semiconductor film of the electrophotographic photoreceptor is uniformly electrostatically charged, a sample is placed between the XIa source, and X-rays are irradiated. The X-ray transmission image of the sample is recorded as an electrostatic latent image. Then, during or after photographing, the surface of the photoconductive layer is scanned by an electron beam emitted from a lens barrel disposed on the other side of the electrophotographic photoreceptor. At this time, secondary electrons are emitted from the electron beam irradiation spot in an amount commensurate with the latent image potential of the irradiation spot. The secondary electrons (1) are detected by a secondary electron detector provided near the photoconductive layer, and the latent image potential is indirectly measured from the amount of secondary electrons. Then, the output of the secondary electron detector is converted into a video signal via a control section and imaged in real time on a CRT.
[実施例]
以下、この発明の一実施例を別紙添付図面に従って詳述
する。尚、説明の都合上、従来公知に属する技術事項も
同時に説明する。[Example] Hereinafter, an example of the present invention will be described in detail with reference to the accompanying drawings. For convenience of explanation, conventionally known technical matters will also be explained at the same time.
第1図に於て(1)はxIs顕微鏡である。該X線顕微
鏡(1)は電子、ビームプローブスキャナ(2)と、X
線源であるマイクロフォーカスX線管(3)との光軸を
対向させて配置している。前記電子ビームプローブスキ
ャナ(2)は鏡筒(4)と2次電子検出器として用いる
マルチチャンネル形映像増倍管(以下、MCPという。In FIG. 1, (1) is an xIs microscope. The X-ray microscope (1) includes an electron beam probe scanner (2) and an
It is arranged with its optical axis facing the microfocus X-ray tube (3) that is the radiation source. The electron beam probe scanner (2) includes a lens barrel (4) and a multi-channel image intensifier tube (hereinafter referred to as MCP) used as a secondary electron detector.
)(5)並びに前記鏡筒(4)の制御と画像信号処理を
行う制御部(6)とから構成されている。前記鏡筒(4
)の真空チャンバ(7)の下端部には電子写真感光体(
8)が脱着自在に取付けられている。該電子写真感光体
(8)の−面はアモルファスセレン等の光導電性半導体
膜にて光導電層(9)が形成され、該光導電層(9)を
真空チャンバ(7)内に向けている。前記鏡筒(4)は
図中上方から電子銃(10)、集束レンズ(11)、走
査コイル(■、ズーミング自在な電子レンズ及び絞りに
→が配設され、ストロボ走査型電子顕微鏡と同一構成と
し、ストロボパルス状の電子ビームにて電子写真感光体
(8)の結像面を走査するものである。該鏡筒(4)の
結像面に於ける空間分解能は1μ程度であり、電子ビー
ムプローブスキャナ(2)単体で300倍程度のズーミ
ング観察ができる。又、前記電子写真感光体(8)の上
方且つ、鏡筒(4)の電子ビーム光路の側方にMCP(
5)を設け、後述する静電潜像を読出すようにしている
。) (5) and a control section (6) that controls the lens barrel (4) and performs image signal processing. The lens barrel (4
) The bottom end of the vacuum chamber (7) of the electrophotographic photoreceptor (
8) is removably attached. A photoconductive layer (9) is formed on the - side of the electrophotographic photoreceptor (8) by a photoconductive semiconductor film such as amorphous selenium, and the photoconductive layer (9) is directed into the vacuum chamber (7). There is. The lens barrel (4) has an electron gun (10), a focusing lens (11), a scanning coil (■), a zoomable electron lens, and a diaphragm (→) arranged from the top in the figure, and has the same configuration as a strobe scanning electron microscope. The imaging plane of the electrophotographic photoreceptor (8) is scanned with a strobe pulsed electron beam.The spatial resolution of the imaging plane of the lens barrel (4) is approximately 1μ, and the electron beam The beam probe scanner (2) alone can perform zooming observation at a magnification of about 300 times.In addition, an MCP (
5) is provided to read out an electrostatic latent image, which will be described later.
前記MCP(5)の出力は制御部(6)のA/Dコンバ
ータ(→を介して、コントロールコンピュータ(1つニ
入力される。該コントロールコンピュータ0つは入力信
号をデジタル処理し、映像回路(図示せず)を駆動して
CRT (lt9にて再現するとともに、スキャンジェ
ネレータ(r7)を介して鏡筒(4)の走査コイル(■
を制御し、該鏡筒(4)の電子ビームとcRT(+*の
走査を同期させている。The output of the MCP (5) is inputted to the control computer (1) via the A/D converter (→) of the control unit (6). The control computer (0) digitally processes the input signal and outputs the video circuit ( At the same time, the scanning coil (■
The electron beam of the lens barrel (4) and the scanning of cRT (+*) are synchronized.
一方、同図中下方に配設されたマイクロフォーカスX線
管(3)は、真空チャンバ(In内に収納され、電子銃
(鴎から発射された電子ビームを集束レンズ(イ)にて
集束し、ターゲット(21)へ衝突させて微小焦点のX
線を上方の電子写真感光体(8)へ放射する。On the other hand, the microfocus X-ray tube (3) located at the bottom of the figure is housed in a vacuum chamber (In) and focuses the electron beam emitted from the electron gun (Seagull) with a focusing lens (A). , collide with the target (21) to produce a micro-focused X
A line is emitted onto the electrophotographic photoreceptor (8) above.
又、走査コイル(ハ)はターゲラl−(21)への電子
ビーム衝突位置を変化させるものである。Further, the scanning coil (c) changes the position of the electron beam impinging on the target laser l-(21).
次に、当該X線顕微鏡(1)の作動を説明する。先ず、
電子写真感光体(8)の光導電層(9)をスコロトロン
(図示せず)のコロナ放電、或は電子ビームプローブス
キャナ(2)の電子ビームによって均一に静電帯電させ
る。このとき、後述する理由から負電荷に帯電させるこ
とが好ましい。そして、試料(P)を電子写真感光体(
8)とマイクロフォーカスX線管(3)の放射口(3a
)との間に位置させるが、該位置により前記電子写真感
光体(8)に密着させた当倍撮影から100倍程反末で
の拡大撮影ができる。従って、前記電子ビームプローブ
スキャナ(2)の倍率と相俟って数万倍の倍率が得られ
ている。Next, the operation of the X-ray microscope (1) will be explained. First of all,
The photoconductive layer (9) of the electrophotographic photoreceptor (8) is uniformly electrostatically charged by corona discharge from a scorotron (not shown) or by an electron beam from an electron beam probe scanner (2). At this time, it is preferable to charge the battery negatively for reasons described later. Then, the sample (P) was attached to the electrophotographic photoreceptor (
8) and the radiation aperture (3a) of the microfocus X-ray tube (3).
), and by this position, it is possible to take images at a magnification of about 100 times from the same magnification taken in close contact with the electrophotographic photoreceptor (8). Therefore, together with the magnification of the electron beam probe scanner (2), a magnification of tens of thousands of times is obtained.
而して、マイクロフォーカスX線管(3)からX線を照
射して試料(P)を撮影し、光導電層(9)に該試料(
P)の静電潜像を形成すると同時に、或は撮影後に電子
ビームプローブスキャナ(2)の電子ビームをズーム倍
率に応じコリメートして前記光導電層(9)を走査する
。このとき、第2図に示すように、光導電層(9)の電
子ビーム照射点(S)から2次電子(E) (E)・・
・が発生し、グリッド(ハ)により加速されてMCP(
5)に入射する。前記2次電子量は光導電層(9)とM
CP(5)との空間によるエネルギーフィルタ効果によ
り、電子ビーム照射点(S)の電位に比例した電子量と
して捉えられ、間接的に測定された静電潜像の電位は制
御部(6)にて映像信号に変換される。該制御部(6)
はMCP(ら)との組合せによってIO数mV程度の電
位分解能があり、階調分解能は10ビット以上となって
いる。Then, the sample (P) is photographed by irradiating X-rays from the microfocus X-ray tube (3), and the photoconductive layer (9) is coated with the sample (P).
At the same time as forming the electrostatic latent image P), or after photographing, the photoconductive layer (9) is scanned by collimating the electron beam of the electron beam probe scanner (2) according to the zoom magnification. At this time, as shown in FIG. 2, secondary electrons (E) (E)...
・ is generated, accelerated by the grid (c), and MCP (
5). The amount of secondary electrons is determined by the photoconductive layer (9) and M
Due to the energy filter effect created by the space between the CP (5), the amount of electrons is perceived as being proportional to the potential of the electron beam irradiation point (S), and the indirectly measured potential of the electrostatic latent image is sent to the control unit (6). is converted into a video signal. The control section (6)
In combination with MCP (et al.), it has a potential resolution of about several IO mV, and a gradation resolution of 10 bits or more.
ここで、第3図(A)(B)に示すように光導電層(9
)を正1u荷で帯電し、静電潜像が正電荷で形成されて
いる場合は、電子ビームプローブスキャナ(2)の電子
ビーム(B)によって前記静電潜像は中和されるととも
に、発生した2次電子(E) (E)・・・の電子ビー
ム照射点(S)近傍部へのまき込みにより中和される。Here, as shown in FIGS. 3(A) and 3(B), the photoconductive layer (9
) is charged with a positive 1u charge, and if an electrostatic latent image is formed with positive charges, the electrostatic latent image is neutralized by the electron beam (B) of the electron beam probe scanner (2), and The generated secondary electrons (E) (E)... are neutralized by flowing into the vicinity of the electron beam irradiation point (S).
依って、第4図(A)(n)の如く静電潜像を負電荷で
形成した場合に比較して2次電子量の読出しに困難性を
生じるため、前述したように光導電層(9)に負電荷を
帯電させるべきである。又、光導電層(9)の表面の凹
凸や傾きによる2次電子発生の悪影響を排除するために
光導電層(9)の表面は滑沢に保チ、又、電子ビーム(
B)に対し正確な水平度を保持することが必要である。Therefore, it is difficult to read out the amount of secondary electrons compared to when an electrostatic latent image is formed with negative charges as shown in FIGS. 4(A) and 4(n). 9) should be charged with a negative charge. In addition, the surface of the photoconductive layer (9) is kept smooth in order to eliminate the adverse effects of secondary electron generation due to unevenness or inclination of the surface of the photoconductive layer (9).
It is necessary to maintain accurate levelness for B).
前記静電潜像は電子ビーム(B)の照射によって中和さ
れ、或はチャージアップが進行し漸次電位が低下して最
終的に静電潜像は消滅し、光導電層(9)上の電位分布
は一様化する。そ゛して、X線に対して感光性を有する
アモルファスセレン等の半導体は電位低下の進行が早く
、連続的に電子ビーム(B)を照射する場合は観察可能
な時間が極めて短かい。又、電子ビーム(It)の照射
による少数キャリアの拡散は静電潜像の保持に悪影響を
与える。The electrostatic latent image is neutralized by irradiation with the electron beam (B), or charge-up progresses, the potential gradually decreases, and finally the electrostatic latent image disappears, and the electrostatic latent image on the photoconductive layer (9) The potential distribution becomes uniform. Therefore, the potential of a semiconductor such as amorphous selenium that is sensitive to X-rays decreases rapidly, and when continuously irradiated with an electron beam (B), the observation time is extremely short. Furthermore, the diffusion of minority carriers due to irradiation with the electron beam (It) has an adverse effect on the retention of the electrostatic latent image.
そこで、本実施例に於ては鏡筒(4)の加速電圧並びに
ビーム電流をともに低減してチャージアップまでの時間
を延長し、且つ、前記ビーム電流の低減によりビーム径
を小として高度な空間分解能を得ている。Therefore, in this embodiment, both the accelerating voltage and beam current of the lens barrel (4) are reduced to extend the time until charge-up, and the beam diameter is reduced by reducing the beam current to achieve an advanced space. Obtaining resolution.
又、第1図に示した制御部(6)により電子ビームプロ
ーブスキャナ(2)の電子ビーム(B)の照射タイミン
グを制御し、数KeVの出力でサンプリングする瞬間の
みストロボパルス状に照射してチャージアップを遅延さ
せるとともに、少数キャリアが発生して拡散する前に潜
像のデータを収集するので、空間分解能は連続ビーム照
射の場合に比較して10〜100倍程度まで反末されて
いる。In addition, the control unit (6) shown in Fig. 1 controls the irradiation timing of the electron beam (B) of the electron beam probe scanner (2), and irradiates it in the form of a strobe pulse only at the moment of sampling with an output of several KeV. Since charge-up is delayed and latent image data is collected before minority carriers are generated and diffused, the spatial resolution is reduced to about 10 to 100 times compared to continuous beam irradiation.
更に、上述したストロボパルス状の電子ビーム(B)を
光導電層(9)の同一点に夫々複数回照射し、発生する
2次電子量をコントロールコンピュータ0→のバッファ
メモリ(15a)にて加算して積分効果によりS/N比
の良好な画像を得ている。而して、上記構成により分解
能10口人、倍率数万倍の性能を有し、生体試料の拡大
像をリアルタイムにデジタル化して得られ、且つ元素分
布像の観察も可能となった。Furthermore, the above-mentioned strobe pulsed electron beam (B) is applied to the same point on the photoconductive layer (9) multiple times, and the amount of secondary electrons generated is added up in the buffer memory (15a) of the control computer 0→. An image with a good S/N ratio is obtained due to the integral effect. The above configuration has a resolution of 10 mm and a magnification of several tens of thousands of times, and enables the digitization of enlarged images of biological samples in real time, as well as the observation of elemental distribution images.
尚、この発明は、この発明の精神を逸脱しない限り種々
の改変を為す事ができ、そ[、て、この発明が該改変せ
られたものに及ぶことは当然である。This invention can be modified in various ways without departing from the spirit of the invention, and it is natural that this invention extends to such modifications.
[発明の効果]
この発明は上記一実施例に詳述したように、電子写真感
光体に撮影された静電潜像から画像データを読出してい
る。前記電子写真感光体の光導電層形成された静電潜像
は画面形成の最小単位が電荷であるため、前記静電潜像
を電気的に可視化すれば極めて高分解能のX線感光体と
なる。然し、従来の表面電位プローブ等を用いては画像
化するための高精度な走査は不可能であった。そこで、
この発明に於ては、鏡筒と2次電子検出器とによって形
成した電子ビームプローブスキャナを用い、潜像電位を
間接的に測定するように構成したので、極めて高い分解
能を有するX線顕微鏡が形成された。そして、前記静電
潜像の電位を走査して測定するので入力信号のデジタル
化が容易であり、高画質の画像をリアルタイムに観察で
きる。[Effects of the Invention] As described in detail in the above embodiment, the present invention reads image data from an electrostatic latent image photographed on an electrophotographic photoreceptor. Since the electrostatic latent image formed on the photoconductive layer of the electrophotographic photoreceptor has an electric charge as the smallest unit of screen formation, if the electrostatic latent image is electrically visualized, it becomes an X-ray photoreceptor with extremely high resolution. . However, it has been impossible to perform highly accurate scanning for imaging using conventional surface potential probes and the like. Therefore,
This invention uses an electron beam probe scanner formed by a lens barrel and a secondary electron detector, and is configured to indirectly measure the latent image potential, making it possible to use an X-ray microscope with extremely high resolution. Been formed. Since the potential of the electrostatic latent image is scanned and measured, input signals can be easily digitized, and high-quality images can be observed in real time.
又、前記電子写真感光体は従来のX線感光性高分子材料
或は銀塩フィルム等に比し、極めて高感度なため露光時
間が短縮化され、且つ数にVp〜1゜Bvpの広い波長
範囲のX線光源に対応でき、更に生体試料をリアルタイ
ムに観察する事が可能となる等、X線顕微鏡の性能並び
に機能の向上、利用範囲の拡大に著しい効果を発揮する
。In addition, the electrophotographic photoreceptor has extremely high sensitivity compared to conventional X-ray-sensitive polymer materials or silver salt films, so exposure time can be shortened, and it has a wide wavelength range of Vp to 1°Bvp. It can be used with a wide range of X-ray light sources, and it also makes it possible to observe biological samples in real time, making it extremely effective in improving the performance and functionality of X-ray microscopes and expanding their range of use.
図は本発明の一実施例を示し、第1図はX線顕微鏡の構
成解説図、第2図は2次電子の検出動作を示す解説図、
第3図(A)(B)は夫々正電荷で形成された静電潜像
を読出す際の2次電子の動きを示す要部解説図、第4図
(^)(El)は夫々負電荷で形成された静電潜像を読
出す際の2次電子の動きを示す要部解説図である。
(1)・・・・・・X線顕微鏡
(2)・・・・・・電子ビームプローブスキャナ(3)
・・・・・・マイクロフォーカスX線管(4)・・・・
・・鏡筒
(5)・・・・・・MCP (6)・・・・
・・制御部(8)・・・・・・電子写真感光体 (9)
・・・・・・光導電層(P)・・・・・・試料
(E)・・・・・・2次電子第2図
(E)・・・2次電子
第3図The figures show one embodiment of the present invention, Fig. 1 is an explanatory diagram of the configuration of an X-ray microscope, Fig. 2 is an explanatory diagram showing the detection operation of secondary electrons,
Figures 3 (A) and (B) are explanatory diagrams of the main parts showing the movement of secondary electrons when reading out an electrostatic latent image formed with positive charges, respectively, and Figures 4 (^) and (El) are respectively negative FIG. 3 is an explanatory diagram of main parts showing the movement of secondary electrons when reading out an electrostatic latent image formed by electric charge. (1)...X-ray microscope (2)...Electron beam probe scanner (3)
...Micro focus X-ray tube (4)...
... Lens tube (5) ... MCP (6) ...
...Control unit (8) ...Electrophotographic photoreceptor (9)
...Photoconductive layer (P) ...Sample
(E)...Secondary electron figure 2 (E)...Secondary electron figure 3
Claims (1)
対向して配設し、該電子写真感光体の他面に対峙して走
査型電子ビーム放射器を設け、且つ、該電子写真感光体
の光導電層から放出される2次電子を検出する2次電子
検出器を配設し、該2次電子検出器の出力を画像に変換
する制御部を設けたことを特徴とするX線顕微鏡。An electrophotographic photoreceptor for taking an X-ray transmission image of a sample is disposed facing an X-ray source, a scanning electron beam radiator is provided opposite to the other surface of the electrophotographic photoreceptor, and A secondary electron detector for detecting secondary electrons emitted from a photoconductive layer of a photographic photoreceptor is provided, and a control section is provided for converting the output of the secondary electron detector into an image. X-ray microscope.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1343676A JPH03200100A (en) | 1989-12-28 | 1989-12-28 | X-ray microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1343676A JPH03200100A (en) | 1989-12-28 | 1989-12-28 | X-ray microscope |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03200100A true JPH03200100A (en) | 1991-09-02 |
Family
ID=18363384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1343676A Pending JPH03200100A (en) | 1989-12-28 | 1989-12-28 | X-ray microscope |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03200100A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004251800A (en) * | 2003-02-21 | 2004-09-09 | Ricoh Co Ltd | Method and apparatus for measuring surface charge distribution |
| JP2008275608A (en) * | 2008-04-07 | 2008-11-13 | Ricoh Co Ltd | Electrostatic latent image measuring apparatus and electrostatic latent image measuring method |
| JP2009092663A (en) * | 2008-10-20 | 2009-04-30 | Ricoh Co Ltd | Method and apparatus for measuring surface charge distribution |
| US8143603B2 (en) | 2008-02-28 | 2012-03-27 | Ricoh Company, Ltd. | Electrostatic latent image measuring device |
| US8168947B2 (en) | 2008-06-10 | 2012-05-01 | Ricoh Company, Ltd. | Electrostatic latent image evaluation device, electrostatic latent image evaluation method, electrophotographic photoreceptor, and image forming device |
| US8847158B2 (en) | 2010-09-06 | 2014-09-30 | Ricoh Company, Ltd. | Device and method for measuring surface charge distribution |
| US9008526B2 (en) | 2012-02-02 | 2015-04-14 | Ricoh Company, Limited | Method of measuring total amount of latent image charge, apparatus measuring total amount of latent image charge, image forming method and image forming apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61267000A (en) * | 1985-05-22 | 1986-11-26 | 株式会社ニコン | X-ray microscope |
-
1989
- 1989-12-28 JP JP1343676A patent/JPH03200100A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61267000A (en) * | 1985-05-22 | 1986-11-26 | 株式会社ニコン | X-ray microscope |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004251800A (en) * | 2003-02-21 | 2004-09-09 | Ricoh Co Ltd | Method and apparatus for measuring surface charge distribution |
| US8143603B2 (en) | 2008-02-28 | 2012-03-27 | Ricoh Company, Ltd. | Electrostatic latent image measuring device |
| JP2008275608A (en) * | 2008-04-07 | 2008-11-13 | Ricoh Co Ltd | Electrostatic latent image measuring apparatus and electrostatic latent image measuring method |
| US8168947B2 (en) | 2008-06-10 | 2012-05-01 | Ricoh Company, Ltd. | Electrostatic latent image evaluation device, electrostatic latent image evaluation method, electrophotographic photoreceptor, and image forming device |
| JP2009092663A (en) * | 2008-10-20 | 2009-04-30 | Ricoh Co Ltd | Method and apparatus for measuring surface charge distribution |
| US8847158B2 (en) | 2010-09-06 | 2014-09-30 | Ricoh Company, Ltd. | Device and method for measuring surface charge distribution |
| US9008526B2 (en) | 2012-02-02 | 2015-04-14 | Ricoh Company, Limited | Method of measuring total amount of latent image charge, apparatus measuring total amount of latent image charge, image forming method and image forming apparatus |
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