JPH03204193A - Solder material - Google Patents
Solder materialInfo
- Publication number
- JPH03204193A JPH03204193A JP34187589A JP34187589A JPH03204193A JP H03204193 A JPH03204193 A JP H03204193A JP 34187589 A JP34187589 A JP 34187589A JP 34187589 A JP34187589 A JP 34187589A JP H03204193 A JPH03204193 A JP H03204193A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- strength
- solder metal
- metal
- solder material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 76
- 239000000463 material Substances 0.000 title claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 229910000765 intermetallic Inorganic materials 0.000 claims description 21
- 229910018471 Cu6Sn5 Inorganic materials 0.000 abstract description 3
- 230000008023 solidification Effects 0.000 abstract description 3
- 238000007711 solidification Methods 0.000 abstract description 3
- 229910017692 Ag3Sn Inorganic materials 0.000 abstract 2
- 229910017687 Ag3Sb Inorganic materials 0.000 abstract 1
- 229910006913 SnSb Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 15
- 239000002245 particle Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 9
- 238000005476 soldering Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229910000978 Pb alloy Inorganic materials 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000009689 gas atomisation Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910020174 Pb-In Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は半田材料に関する。本発明の半田材料は例えば
車載用電子機器の半田付は部に適用できる。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to solder materials. The solder material of the present invention can be applied to, for example, the soldering of automotive electronic equipment.
[従来の技術]
従来より半田材料として、5n63重量%(以下重量%
をたんに%という>、Pb37%を含む共晶組成をもつ
5n−Pb系合金が知られている。[Prior art] Conventionally, 5n63% by weight (hereinafter referred to as % by weight) has been used as a solder material.
A 5n-Pb alloy having a eutectic composition containing 37% Pb is known.
この半田材料は共晶組成をもつため融点が低く、半田接
合が容易であり、電子機器、電気機器で広く使用されて
いる。Since this solder material has a eutectic composition, it has a low melting point and is easy to solder join, and is widely used in electronic and electrical equipment.
しかし苛酷な環境下で使用される場合には、従来より使
用されている共晶組成をもつ5n−Pb系合金では、半
田金属が凝固した半田付は部の強度は不充分である。However, when used in harsh environments, the conventionally used 5n-Pb alloys having a eutectic composition have insufficient strength in the soldered parts where the solder metal has solidified.
例えば車載用電子機器で使用される場合には、他の電子
機器と異なり、高温領域で使用されたり、苛酷な冷熱サ
イクルが繰返されたりするので、従来より使用されてい
る半田材料では強度、特に高温における強度が不充分と
なりがちである。For example, when used in automotive electronic equipment, unlike other electronic equipment, it is used in high-temperature areas and undergoes repeated harsh cooling and heating cycles. Strength at high temperatures tends to be insufficient.
また近年、半田材料として、特開昭61−269998
号公報に開示されているように3n系合金に、Ag、s
bを含ませるとともに、酸素含有量を5ppm以下とし
、平均結晶粒径を3μm以下にしたものが知られている
。In addition, in recent years, JP-A-61-269998 has been used as a solder material.
As disclosed in the publication, Ag, s
It is known to contain B, have an oxygen content of 5 ppm or less, and have an average crystal grain size of 3 μm or less.
ざらに他の半田材料として、特開昭60−166191
号公報に開示されているように5n−Pb系合金に3i
、Cuを添加した耐疲労特性に優れたものも知られてい
る。As another solder material, JP-A-60-166191
As disclosed in the publication, 3i is added to the 5n-Pb alloy.
, and those having excellent fatigue resistance properties with the addition of Cu are also known.
また他の半田材料として、特開昭61−82994号公
報に開示されているようにp b −3r)系合金にB
i、Aqを添加した耐疲労特性に優れたものも知られて
いる。In addition, as other solder materials, as disclosed in Japanese Patent Application Laid-open No. 61-82994, B
There are also known materials with excellent fatigue resistance properties that include i and Aq.
[発明が解決しようとする課題]
本発明は、上記したように組成に特徴をもつ従来の各半
田材料とは異なる観点から半田付は部の強度を増加させ
得る半田材料を提供することを課題とする。[Problems to be Solved by the Invention] An object of the present invention is to provide a solder material that can increase the strength of a soldered part from a different perspective from conventional solder materials that have compositional characteristics as described above. shall be.
[課題を解決するための手段]
本発明者は、半田材料について鋭意研究を重ねた結果、
半田金属の凝固時に結晶核となり得る金属間化合物を半
田金属に分散させれば、半田金属が凝固した半田付は部
の強度、特に高温における強度(耐熱性、冷熱耐久性)
が向上することを知見し、かかる知見に基づき本発明の
半田材料を完成させたものである。[Means for Solving the Problems] As a result of intensive research on solder materials, the present inventor has discovered that
If intermetallic compounds that can become crystal nuclei are dispersed in the solder metal when the solder metal solidifies, the solder metal solidified will increase the strength of the part, especially the strength at high temperatures (heat resistance, cold durability)
Based on this knowledge, we have completed the solder material of the present invention.
結晶核となり得る金属間化合物を半田金属に分散させれ
ば、上記した特性が得られる理由は、半田金属の結晶粒
の微細化に金属間化合物が寄与するため、凝固した後の
半田金属の結晶粒の高温における粗大化を金属間化合物
が抑えるためであると推察される。The reason why the above characteristics can be obtained by dispersing intermetallic compounds that can become crystal nuclei in the solder metal is that the intermetallic compounds contribute to the refinement of the crystal grains of the solder metal, so that the crystals of the solder metal after solidification are It is presumed that this is because the intermetallic compound suppresses the coarsening of grains at high temperatures.
本発明の半田材料は、半田金属と、半田金属に分散した
半田金属の凝固時に結晶核となり得る金属間化合物とか
らなることを特徴とするものである。The solder material of the present invention is characterized by comprising a solder metal and an intermetallic compound that is dispersed in the solder metal and can become crystal nuclei when the solder metal solidifies.
本発明の半田材料の形態は粉末状でも、棒状、ワイヤ状
、板状、箔状でもよく、その形状を問わない。半田材料
が粉末状の場合には粉末粒子の大きさは適宜選択でき、
また半田材料が棒状、ワイヤ状、板状、箔状の場合には
、その径、厚みは適宜選択できる。The solder material of the present invention may be in any form, including powder, rod, wire, plate, or foil. If the solder material is in powder form, the size of the powder particles can be selected as appropriate;
Further, when the solder material is rod-shaped, wire-shaped, plate-shaped, or foil-shaped, the diameter and thickness can be selected as appropriate.
分散とは、半田金属と金属間化合物とが混じり合ってい
ることをいい、半田金属の粉末と金属間化合物の粉末と
が混じりあっている形態を含み、更に、粉末粒子状、棒
状、ワイヤ状、板状、箔状等の半田金属のマトリックス
組織に金属間化合物が組織上混じりあっている形態をも
含む意味である。前者の形態の場合には、半田金属の粉
末粒子の粒径は例えば1μTrL〜50μm、金属間化
合物の粉末粒子の粒径は例えば、0.5μTrL〜30
μmとすることができる。Dispersion refers to the mixing of solder metal and intermetallic compound, and includes forms in which solder metal powder and intermetallic compound powder are mixed, and also forms in the form of powder particles, rods, and wires. This term also includes forms in which intermetallic compounds are mixed in the matrix structure of the solder metal, such as plate-like or foil-like structures. In the case of the former form, the particle size of the solder metal powder particles is, for example, 1 μTrL to 50 μm, and the particle size of the intermetallic compound powder particles is, for example, 0.5 μTrL to 30 μm.
It can be μm.
半田金属の組成は従来より用いられている公知のものを
用いることができ、Sn、5n−Pb。As for the composition of the solder metal, conventionally known compositions can be used, such as Sn and 5n-Pb.
Pbあるいは必要に応じてIn、Sb、ACI、Biを
含んでいてもよい。具体的には、従来より使用されてい
る5n−Pb系、pb−Aにl系、3n−3i系、5n
−Pb−Bi系、5n−Pb−In系を採用できる。な
お、半田金属を形成する各金属元素の割合は流動性、強
度などを考慮して適宜設定することができる。It may contain Pb or, if necessary, In, Sb, ACI, or Bi. Specifically, the conventionally used 5n-Pb system, pb-A, l system, 3n-3i system, 5n
-Pb-Bi system and 5n-Pb-In system can be adopted. Note that the proportion of each metal element forming the solder metal can be appropriately set in consideration of fluidity, strength, etc.
金属間化合物は二種類以上の金属元素等が所定の整数比
で結合した化合物であり、一部が半金属元素である化合
物、非金属の侵入型化合物でも組成比が一定で金属に近
い性質をもつ化合物を含む。An intermetallic compound is a compound in which two or more metal elements are combined in a predetermined integer ratio, and even compounds in which a portion is a semimetal element and interstitial nonmetallic compounds have a constant composition ratio and have properties similar to metals. Contains compounds with
金属間化合物は通常半田金属よりも融点が高い。Intermetallic compounds typically have higher melting points than the solder metal.
金属間化合物としては、Cug Sns 、Ag3 S
nの少なくとも一種を採用できる。ざらには、Cus
Sn、CLI6 Sns 、AQ3Sr11Ag3Sb
、5nSb、In2Sn、In5rl、AQ2In、I
QInの少なくとも一種を採用できる。As intermetallic compounds, Cug Sns, Ag3S
At least one of n can be employed. Zarani, Cus
Sn, CLI6 Sns, AQ3Sr11Ag3Sb
, 5nSb, In2Sn, In5rl, AQ2In, I
At least one type of QIn can be employed.
半田材料全体に占める金属間化合物の割合は、要求され
る強度、流動性等に応じて適宜選択できるが、少なすぎ
ると半田金属の結晶粒の微細化が充分性われず、所望の
強度が得られない。又、多すぎると半田金属の流動性に
悪影響を与え、接合部の強度が低下する。そのため、金
属間化合物は、半田材料全体を100%としたとき0.
02〜8%、特に0.05〜3%とすることができる。The proportion of intermetallic compounds in the entire solder material can be selected as appropriate depending on the required strength, fluidity, etc., but if it is too small, the crystal grains of the solder metal will not be sufficiently refined and the desired strength will not be achieved. I can't do it. Moreover, if the amount is too large, it will adversely affect the fluidity of the solder metal and reduce the strength of the joint. Therefore, the intermetallic compound is 0.0% when the entire solder material is taken as 100%.
02-8%, especially 0.05-3%.
半田金属として5n−Pb系合金を用いた場合を例にと
って説明する。この場合には半田金属の熱疲労性を向上
させるためにSb、Inのうち少なくとも一種を添加す
ることができ、また金属間化合物としてCLIに Sn
s 、A(HSnのうち少なくとも一種を用いることが
できる。この場合、半田材料全体を100%としたとき
Sbは1〜15%、Inは1%以上、金属間化合物は0
.05〜2%とすることができる。ここで、3b、in
を1%以上としたのは、1%未満では半田付は部の所望
の強度を得ることができず、更に高温で放置するとSn
と基板の導体との間で反応して形成された脆い化合物相
が成長して、半田付は部の強度の低下が著しくなるから
である。またsbを15%以下としたのは、15%を越
えると半田金属の融点が上昇し、流動性が悪くなるとと
もに半田付けの際に電子部品に熱ダメージを与えるから
である。An example will be explained in which a 5n-Pb alloy is used as the solder metal. In this case, at least one of Sb and In can be added to improve the thermal fatigue properties of the solder metal, and Sn can be added to CLI as an intermetallic compound.
s, A (HSn).In this case, when the entire solder material is taken as 100%, Sb is 1 to 15%, In is 1% or more, and intermetallic compounds are 0.
.. It can be set at 0.05 to 2%. Here, 3b, in
The reason for setting Sn to 1% or more is that if it is less than 1%, the desired strength of the soldering part cannot be obtained, and if left at a high temperature, the Sn
This is because a brittle compound phase formed by the reaction between the conductor and the conductor of the substrate grows, resulting in a significant decrease in the strength of the soldered part. The reason why sb is set to 15% or less is because if it exceeds 15%, the melting point of the solder metal will rise, the fluidity will deteriorate, and electronic components will be damaged by heat during soldering.
本発明の半田材料では、半田付けを行った状態において
は、金属間化合物は、凝固した半田金属に溶は込むこと
なく半田金属のマトリックス組織に分散していてもよい
し、あるいは、凝固した半田金属に一体的に溶は込んで
いてもよい。In the solder material of the present invention, when soldering is performed, the intermetallic compound may be dispersed in the matrix structure of the solder metal without melting into the solidified solder metal, or the intermetallic compound may be dispersed in the matrix structure of the solder metal without melting into the solidified solder metal. It may be integrally melted into the metal.
[実施例]
次に第1実施例、第2実施例の混合粉末状の半田材料を
用い、その半田材料とフラックス(重合ロジン)とを混
ぜてペースト状にしたものを基板と電子部品(半導体部
品あるいはコンデンサ)との間に介在させ、その状態で
大気雰囲気において240〜250℃で5〜6分間加熱
して実際に半田付けし、その半田付は部の強度を試験し
た。試験では試験機として電気油圧サーボ式引張り試験
機を用い、常温放置後の引張り強さ、120℃で30日
間放置した後の引張り強さ、150℃で30日間放置し
たときの引張り強さを調べた。[Example] Next, using the mixed powder solder materials of Examples 1 and 2, the solder materials and flux (polymerized rosin) were mixed to form a paste, which was then applied to substrates and electronic components (semiconductor parts). (component or capacitor), and in that state was heated in the air at 240 to 250° C. for 5 to 6 minutes to perform actual soldering, and the strength of the soldered portion was tested. In the test, an electro-hydraulic servo tensile testing machine was used as a testing machine to examine the tensile strength after being left at room temperature, the tensile strength after being left at 120°C for 30 days, and the tensile strength after being left at 150°C for 30 days. Ta.
第1実施例の半田材料は、5n−Pb−3b系の半田粉
末(粒径30μm)とCu6Sn5粉末(粒径20μm
)とを均一に混合した混合粉末である。半田粉末はガス
アトマイズによる噴霧法にて製造した。またCU6Sr
ls粉末も同様にガスアトマイズにて製造した。第1実
施例の半田材料は、半田材料全体を100%としたとき
、5n58%、Pb36%、Sb5%、CugSns
1%、不可避の不純物の組成をもつ。The solder materials of the first example were 5n-Pb-3b solder powder (particle size 30 μm) and Cu6Sn5 powder (particle size 20 μm).
) is a uniformly mixed powder. The solder powder was manufactured by a spraying method using gas atomization. Also CU6Sr
The ls powder was similarly produced by gas atomization. The solder material of the first example is 5n58%, Pb36%, Sb5%, CugSns, when the whole solder material is taken as 100%.
1%, with a composition of unavoidable impurities.
第2実施例の半田材料は、5n−Pb−I n系の半田
粉末(粒径30μm)とA03srl粉末(粒径15μ
m)とを均一に混合した混合粉末の形態である。AQa
Sn粉末は第1実施例と同様にガスアトマイズにて製造
した。第2実施例の半田材料は、半田材料全体を100
%としたとき、5n58%、Pb36%、In5%、A
Q3Sn1%、不可避の不純物の組成をもつ。The solder materials of the second example were 5n-Pb-I n-based solder powder (particle size 30 μm) and A03srl powder (particle size 15 μm).
It is in the form of a mixed powder that is uniformly mixed with m). AQa
Sn powder was produced by gas atomization in the same manner as in the first example. The solder material of the second embodiment has a total solder material of 100%
When expressed as %, 5n58%, Pb36%, In5%, A
Q3Sn: 1%, with a composition of unavoidable impurities.
比較例として従来より使用されている5n63%、Pb
37%の共晶組成をもつ粉末状の半田材料(粒径3Qu
m、)を用い、同様に半田付けを行い、半田付は部の強
度を試験した。As a comparative example, 5n63%, Pb, which has been used conventionally.
Powdered solder material with eutectic composition of 37% (particle size 3Qu)
Soldering was carried out in the same manner using 1.m, ), and the strength of the soldered portion was tested.
試験結果を第1表に示す。第1表から明らかなように、
常温放置後の引張り強さは第1実施例で5、5Nff/
mm2 、第2実施例で4.El/mm2、比較例で4
.5Ng/mm2 であり、はとんどかわらない。しか
し、120°Cで30日間放置した後の引張り強さ、1
50℃で30日間放置した後における引張り強さは、比
較例の場合は1.9kcl/mm2に低下し強度低下が
著しいが、第1実施例、第2実施例の場合には共に3k
q/mm2以上の引張り強さをもち、強度低下は少ない
。The test results are shown in Table 1. As is clear from Table 1,
The tensile strength after being left at room temperature is 5.5 Nff/in the first example.
mm2, 4 in the second embodiment. El/mm2, 4 in comparative example
.. 5Ng/mm2, which is almost unchanged. However, the tensile strength after being left at 120°C for 30 days, 1
The tensile strength after being left at 50°C for 30 days decreased to 1.9 kcl/mm2 in the case of the comparative example, which was a significant decrease in strength, but in the case of the first and second examples, it was 3k.
It has a tensile strength of q/mm2 or more, and there is little decrease in strength.
このことから第1実施例、第2実施例の半田材料、は耐
熱性が優れていることがわかる。This shows that the solder materials of the first and second examples have excellent heat resistance.
(以下余白)
次に、第1実施例、第2実施例の各半田材料を用い、各
半田材料と7ラツクス(重合ロジン)とを混ぜてペース
ト状にしたものをガラスエポキシ基板と電子部品(半導
体部品、コンデンサ等)との間に介在させ、その状態で
前述同様な条件下で半田付けした。そして、試験機とし
て熱衝撃試験機を用い、−30℃(30分間)〜80℃
(30分間)の冷熱サイクルを何回も繰返す冷熱耐久試
験を行った。比較例についても同様に冷熱耐久試験を行
った。冷熱耐久試験において第1実施例、第2実施例で
は3000サイクルまで電子部品に動作不良が生ぜず冷
熱耐久性に優れていた。これに対して比較例では200
0サイクルで電子部品の動作不良が生じた。(Left below) Next, using each of the solder materials of the first and second examples, a paste was prepared by mixing each solder material with 7lux (polymerized rosin), and a glass epoxy board and an electronic component ( (semiconductor parts, capacitors, etc.), and soldered in that state under the same conditions as described above. Then, using a thermal shock tester as a tester, -30℃ (30 minutes) to 80℃
A cold and heat durability test was conducted in which a cold and heat cycle (30 minutes) was repeated many times. The comparative example was also subjected to a cold and heat durability test in the same manner. In the cold and heat durability tests, the electronic components of the first and second examples exhibited excellent cold and heat durability without malfunctioning up to 3000 cycles. On the other hand, in the comparative example, 200
An electronic component malfunctioned in the 0th cycle.
同様に、第1実施例、第2実施例の半田材料を用い、前
述同様にアルミナ基板に電子部品(半導体部品、コンデ
ンサ等)を半田付けした。そして、−50℃(30分間
)〜125℃(30分間)の冷熱サイクルを何回も繰返
す冷熱耐久試験を行った。この場合には第1実施例、第
2実施例では、3000サイクル以上の冷熱耐久性が得
られたが、比較例では2500サイクルで電子部品の動
作不良が生じた。Similarly, electronic components (semiconductor components, capacitors, etc.) were soldered to an alumina substrate in the same manner as described above using the solder materials of the first and second embodiments. Then, a cold and heat durability test was conducted in which a cold and heat cycle from -50°C (30 minutes) to 125°C (30 minutes) was repeated many times. In this case, in the first example and the second example, thermal durability of 3,000 cycles or more was obtained, but in the comparative example, malfunction of the electronic component occurred after 2,500 cycles.
[発明の効果]
本発明の半田材料によれば、半田金属の凝固時に結晶核
となり得る金属間化合物を半田金属に分散させているの
で、半田金属が凝固した半田付は部の強度を向上させる
のに有利である。特に半田付は部の高温における強度、
例えば耐熱性、冷熱耐久性を向上させることができる。[Effects of the Invention] According to the solder material of the present invention, since intermetallic compounds that can become crystal nuclei are dispersed in the solder metal when the solder metal solidifies, the strength of the soldered part where the solder metal solidifies is improved. It is advantageous for In particular, soldering requires strength at high temperatures.
For example, heat resistance and cold durability can be improved.
従って特に使用環境が苛酷な車載用電子機器に使用する
のに適する。Therefore, it is particularly suitable for use in in-vehicle electronic equipment that is used in harsh environments.
Claims (1)
固時に結晶核となり得る金属間化合物とからなることを
特徴とする半田材料。(1) A solder material comprising a solder metal and an intermetallic compound that is dispersed in the solder metal and can become crystal nuclei when the solder metal solidifies.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34187589A JPH03204193A (en) | 1989-12-29 | 1989-12-29 | Solder material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34187589A JPH03204193A (en) | 1989-12-29 | 1989-12-29 | Solder material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03204193A true JPH03204193A (en) | 1991-09-05 |
Family
ID=18349427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34187589A Pending JPH03204193A (en) | 1989-12-29 | 1989-12-29 | Solder material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03204193A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1035583A3 (en) * | 1999-03-11 | 2001-05-09 | Kabushiki Kaisha Toshiba | Semiconductor element and fabricating method thereof |
| KR100438409B1 (en) * | 2001-10-26 | 2004-07-02 | 한국과학기술원 | Composite solders and process method of composite solders |
| WO2005004564A1 (en) * | 2003-07-01 | 2005-01-13 | Hitachi, Ltd. | REFLOW SOLDERING METHOD USING Pb-FREE SOLDER ALLOY AND HYBRID PACKAGING METHOD AND STRUCTURE |
| JP2013054851A (en) * | 2011-09-01 | 2013-03-21 | Sekisui Chem Co Ltd | Conductive particle, method of manufacturing conductive particle, anisotropic conductive material and connection structure |
-
1989
- 1989-12-29 JP JP34187589A patent/JPH03204193A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1035583A3 (en) * | 1999-03-11 | 2001-05-09 | Kabushiki Kaisha Toshiba | Semiconductor element and fabricating method thereof |
| US6569752B1 (en) | 1999-03-11 | 2003-05-27 | Kabushiki Kaisha Toshiba | Semiconductor element and fabricating method thereof |
| KR100438409B1 (en) * | 2001-10-26 | 2004-07-02 | 한국과학기술원 | Composite solders and process method of composite solders |
| WO2005004564A1 (en) * | 2003-07-01 | 2005-01-13 | Hitachi, Ltd. | REFLOW SOLDERING METHOD USING Pb-FREE SOLDER ALLOY AND HYBRID PACKAGING METHOD AND STRUCTURE |
| JP2013054851A (en) * | 2011-09-01 | 2013-03-21 | Sekisui Chem Co Ltd | Conductive particle, method of manufacturing conductive particle, anisotropic conductive material and connection structure |
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