JPH03167870A - semiconductor integrated circuit - Google Patents
semiconductor integrated circuitInfo
- Publication number
- JPH03167870A JPH03167870A JP1308693A JP30869389A JPH03167870A JP H03167870 A JPH03167870 A JP H03167870A JP 1308693 A JP1308693 A JP 1308693A JP 30869389 A JP30869389 A JP 30869389A JP H03167870 A JPH03167870 A JP H03167870A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- metal
- layer
- thermoelectric cooling
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 産業上の利用分野 本発明は半導体集積回路の冷却に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to cooling of semiconductor integrated circuits.
従来の技術
従来 半導体集積回路の冷却にペルチェ効果を利用した
熱電冷却モジュールを利用する場合、集積回路チップと
熱電冷却モジュールを別々に作或し 集積回路チップの
下に熱電冷却モジュールを置いて冷却するという方式で
行なわれてい1,また 集積回路の温度を測定するには
集積回路パッケージの近傍に温度センサを配置して測定
するという方法がとられていた
発明が解決しようとする課題
しかしなが転 上記のような半導体集積回路の冷却方式
で{よ 集積回路チップと熱電冷却モジュールが別々と
なっているたな どうしても大きな空間を占有してしま
うという課題があっt4また 上記のような集積回路の
温度測定では集積回路パッケージ近傍の温度を測定する
ことはできる力丈 集積回路チップ自身の温度を測定す
ることはできないという課題があっら
本発明はこのような課題を解消し 冷却機構を含む非常
に小さな集積回路チップを供給することと、集積回路チ
ップ自身の温度測定を可能とすることを目的とすも
課題を解決するための手段
本発明&友 集積回路チップ内の第1層絶縁膜上にペル
チェ効果による熱電冷却機構を有し ペルチェ効果によ
る熱電冷却機構の上部に第2層絶縁膜を有し 第2層絶
縁膜上に機能回路素子を有することを特徴とする半導体
集積回路であも また本発明は集積回路チップ内に温度
センサを有することを特徴とする半導体集積回路であ翫
作用
本発明の半導体集積回路(よ 集積回路チップ内の第1
層絶縁膜上にペルチェ効果による熱電冷却機構を有し
ペルチェ効果による熱電冷却機構の上部に第2層絶縁膜
を有し 第2層絶縁膜上に機能回路素子を有することに
より冷却機構を含んだ非常に小さな集積回路チップを供
給することができる。また 本発明の半導体集積回路(
上 集積回路チップ内に温度センサを有することにより
、集積回路チップ自身の温度を測定することができる。Conventional Technology Conventional When using a thermoelectric cooling module that utilizes the Peltier effect to cool a semiconductor integrated circuit, the integrated circuit chip and the thermoelectric cooling module are manufactured separately, or the thermoelectric cooling module is placed under the integrated circuit chip to cool it. 1, and the temperature of an integrated circuit was measured by placing a temperature sensor near the integrated circuit package.The problem that the invention was intended to solve, however, was With the cooling method for semiconductor integrated circuits as described above, there is a problem that the integrated circuit chip and the thermoelectric cooling module are separate, but they inevitably take up a large amount of space. In measurement, there is a problem that it is possible to measure the temperature near the integrated circuit package, but it is not possible to measure the temperature of the integrated circuit chip itself.The present invention solves this problem and uses a very small A means for solving the problems is to supply an integrated circuit chip and to make it possible to measure the temperature of the integrated circuit chip itself. This semiconductor integrated circuit is characterized by having a thermoelectric cooling mechanism based on the Peltier effect, having a second layer insulating film on top of the thermoelectric cooling mechanism using the Peltier effect, and having functional circuit elements on the second layer insulating film. The present invention is a semiconductor integrated circuit characterized by having a temperature sensor within an integrated circuit chip.
It has a thermoelectric cooling mechanism based on the Peltier effect on the layer insulation film.
By having a second layer insulating film on top of the thermoelectric cooling mechanism based on the Peltier effect and having functional circuit elements on the second layer insulating film, a very small integrated circuit chip including the cooling mechanism can be provided. Moreover, the semiconductor integrated circuit of the present invention (
By having a temperature sensor within the integrated circuit chip, it is possible to measure the temperature of the integrated circuit chip itself.
実施例
第1図は本発明の一実施例の半導体集積回路の断面図で
あも 第1図において、 2は機能回路素子詠 4は熱
電冷却臥 6は温度センサ部である。Embodiment FIG. 1 is a sectional view of a semiconductor integrated circuit according to an embodiment of the present invention. In FIG. 1, 2 is a functional circuit element, 4 is a thermoelectric cooling device, and 6 is a temperature sensor section.
10〜22は熱電冷却部4を形或するもので、 10は
高熱伝導の第1層絶縁風 l2は第1層目の金[14は
n型半導[16はp型半導体 18は絶縁1扱 20は
第2層目の金鳳 22は高熱伝導の第2層絶縁膜であも
30〜38は温度センサ6を形戒するもので、 30
は絶縁惧 32は熱電対を形或する第1の金風 34は
熱電対を形或する第2の金風 36は温度測定i 3
8は熱電冷却部4へ供給する電流を制御する回路の入力
につながる配線であも
第1図の熱電冷却部4 Cet. まず高熱伝導の第
工層絶縁膜10を形或すも 高熱伝導の第1層絶縁膜1
0の上に第I層目の金属l2と絶縁物18を交互に形戒
すも 第1層目の金属12の上にn型半導体I4とp型
半導体16を形戒しそれらの間に絶縁物18を形或すも
隣合うn型半導体14とp型半導体16のう板 同一
の第1層目の金属l2にないもの同志を接続するように
第2層目の金属20を形威すも それぞれの第2層目の
金属20の間に絶縁物18を形威すん さらにその上に
高熱伝導の第2層絶縁膜22を形戒す瓜 このように形
戒した熱電冷却部4の第1層目の金属12からn型半導
体14へ n型半導体14から第2層目の金属20へ
第2層目の金属20からp型半導体16へ p型半導体
l6から第1層目の金属l2へという方向に電流を流す
と、n型半導体14と第2層目の金属20、第2層目の
金属20とp型半導体16の境界において吸熱現象が生
改 この近傍を冷却することが可能であん この冷却能
力は流す電流量を制御することにより調節することがで
きる。機能回路素子部2は熱電冷却部4の上部に形威す
も
温度センサ部6{よ まず絶縁物30を形威すも絶縁物
30の上部に熱電対を形或する第1の金属32を形戊す
る。熱電対を形或する第1の金属32の上部のう板 温
度測定部36と熱電冷却部4へ供給する電流を制御する
回路の入力につながる配線38と接続する部分を除き絶
縁物30で覆う。10 to 22 form the thermoelectric cooling unit 4, 10 is the first layer of insulation with high thermal conductivity, l2 is the first layer of gold, 14 is the n-type semiconductor, 16 is the p-type semiconductor, 18 is the insulation 1 20 is the second layer of gold, 22 is the second layer insulating film with high thermal conductivity, 30 to 38 are the form of the temperature sensor 6, and 30
32 is a first metal winding that forms a thermocouple; 34 is a second metal winding that forms a thermocouple; 36 is a temperature measuring element; 3
8 is a wiring connected to the input of a circuit that controls the current supplied to the thermoelectric cooling unit 4, and is the same as the thermoelectric cooling unit 4 Cet. First, a first layer insulating film 10 with high thermal conductivity is formed.
On top of the first layer metal 12, an n-type semiconductor I4 and a p-type semiconductor 16 are placed alternately, and there is insulation between them. Shape the object 18. Shape the second layer metal 20 so as to connect the adjacent n-type semiconductor 14 and p-type semiconductor 16 plates that are not in the same first layer metal 12. An insulator 18 is formed between each of the second layer metals 20, and a highly thermally conductive second layer insulating film 22 is formed on top of the insulator 18. From the first layer metal 12 to the n-type semiconductor 14 From the n-type semiconductor 14 to the second layer metal 20
When a current flows in the direction from the second layer metal 20 to the p-type semiconductor 16 and from the p-type semiconductor l6 to the first layer metal l2, the n-type semiconductor 14, the second layer metal 20, and the second layer An endothermic phenomenon occurs at the boundary between the metal 20 and the p-type semiconductor 16. It is possible to cool this vicinity, and the cooling ability can be adjusted by controlling the amount of current flowing. The functional circuit element section 2 is formed on the upper part of the thermoelectric cooling section 4, and the temperature sensor section 6 is formed on the top of the thermoelectric cooling section 4. take shape The upper cover plate of the first metal 32 that forms the thermocouple is covered with an insulator 30 except for the part connected to the wiring 38 connected to the input of the circuit that controls the current supplied to the temperature measuring section 36 and the thermoelectric cooling section 4. .
その上+−, 温度測定部36と重なるように熱電対
を形或する第2の金属34を形或する。熱電対を形或す
る第2の金属34の上部のう板 熱電冷却部4へ供給す
る電流を制御する回路の入力につながる配線38と接続
する部分を除き絶縁物30で覆う。熱電冷却部4へ供給
する電流を制御する回路の入力につながる配線38を熱
電対を形或する第1の金属32と熱電対を形或する第2
の金属34に接続すも
この熱電対を形戊する第1の金属32と熱電対を形或す
る第2の金属34の接合部である温度測定部36での温
度に相当する電位差が熱電冷却部4へ供給する電流を制
御する回路の入力につながる配線38を通じて制御回路
に人力されも 目的とする温度になるように制御された
電流が熱電冷却部4に流れこム それに応じた冷却作用
が働き、集積回路チップの温度を目的の温度に調節すも
以上のように 本実施例によれば 集積回路チップ内に
熱電冷却部4を形或し また 集積回路チップ内に温度
センサ部6を形或し 温度センサ廊6から得られた温度
を入力として、熱電冷却部4に加える電流値を制御して
、チップの温度を調節することにより、冷却機構を含ん
だ非常に小さな集積回路チップを提供する−ことができ
、さらに機能回路素子部2の近傍の温度を正確に測定す
ることができ、素早くかつ正確な温度制御が可能となり
、温度変化による半導体集積回路の特性変化を極力おさ
えることができも
発明の効果
以上説明したように 本発明によれば 集積回路チップ
内の第1層絶縁膜上にペルチェ効果による熱電冷却機構
を有し ペルチェ効果による熱電冷却機構の上部に第2
層絶縁膜を有し 第2層絶縁膜上に機能回路素子を有し
集積回路チップ内に温度センサを有し 温度センサか
ら得られた温度を人力として、熱電冷却部に加える電流
値を制御して、チップの温度を調節することにより、冷
却機構を含んだ非常に小さな集積回路チップを提供する
ことができ、さらに 機能回路素子部の近傍の温度を正
確に測定することがでよ 素早くかつ正確な温度制御が
可能となり、温度変化による半導体集積回路の特性変化
を極力抑えることができ、その実用的効果は絶大であもAdditionally, a second metal 34 is formed to form a thermocouple so as to overlap the temperature measuring portion 36. The upper plate of the second metal 34 forming the thermocouple is covered with an insulator 30 except for the portion connected to the wiring 38 connected to the input of the circuit that controls the current supplied to the thermoelectric cooling unit 4. A wiring 38 connected to the input of a circuit that controls the current supplied to the thermoelectric cooling unit 4 is connected to a first metal 32 forming a thermocouple and a second metal 32 forming a thermocouple.
The potential difference corresponding to the temperature at the temperature measuring part 36, which is the junction between the first metal 32 forming the thermocouple and the second metal 34 forming the thermocouple, is the thermoelectric cooling. Through the wiring 38 connected to the input of the circuit that controls the current supplied to the thermoelectric cooling section 4, a current controlled to reach the desired temperature flows into the thermoelectric cooling section 4 even when inputted manually to the control circuit. As described above, according to this embodiment, the thermoelectric cooling section 4 is formed within the integrated circuit chip, and the temperature sensor section 6 is formed within the integrated circuit chip. Or, by controlling the current value applied to the thermoelectric cooling unit 4 using the temperature obtained from the temperature sensor channel 6 as input to adjust the temperature of the chip, a very small integrated circuit chip including a cooling mechanism is provided. Furthermore, it is possible to accurately measure the temperature in the vicinity of the functional circuit element section 2, enabling quick and accurate temperature control, and minimizing changes in the characteristics of the semiconductor integrated circuit due to temperature changes. Effects of the Invention As explained above, according to the present invention, there is a thermoelectric cooling mechanism based on the Peltier effect on the first layer insulating film in the integrated circuit chip, and a second thermoelectric cooling mechanism based on the Peltier effect is provided on the top of the thermoelectric cooling mechanism based on the Peltier effect.
It has a layer insulating film, has a functional circuit element on the second layer insulating film, has a temperature sensor in the integrated circuit chip, and uses the temperature obtained from the temperature sensor as manual power to control the current value applied to the thermoelectric cooling section. By adjusting the temperature of the chip, it is possible to provide a very small integrated circuit chip that includes a cooling mechanism, and it is also possible to accurately measure the temperature in the vicinity of functional circuit elements. This makes it possible to control temperature in a way that minimizes changes in the characteristics of semiconductor integrated circuits due to temperature changes, and the practical effects of this are enormous.
第1図は本発明の一実施例の半導体集積回路の断面図で
あも
2・・・機能回路素子訊 4・・・熱電冷却臥 6・・
・温度センサ臥 lO・・・高熱伝導の第1層絶縁Kl
2・・・第1層目の金風 14・・・n型半導体 l6
・・・p型半導E 18.30・・・絶縁私 20・
・・第2層目の金風 22・・・高熱伝導の第2層絶縁
[ 32・・・熱電対を形戒する第1の金風 34・
・・熱電対を形戒する第2の金風 36・・・温度測定
敵 38・・・熱電冷却部4へ供給する電流を制御する
回路の入力につながる配亀FIG. 1 is a cross-sectional view of a semiconductor integrated circuit according to an embodiment of the present invention. 2. Functional circuit elements 4. Thermoelectric cooling device 6.
・Temperature sensor lO...First layer insulation Kl with high thermal conductivity
2...First layer gold wind 14...n-type semiconductor l6
...p-type semiconductor E 18.30 ...insulation I 20.
...Second layer of metal wind 22...Second layer of insulation with high thermal conductivity [32...First metal wind to form a thermocouple 34.
・Second metal wind that controls the thermocouple 36 ・Temperature measurement target 38 ・Wire connected to the input of the circuit that controls the current supplied to the thermoelectric cooling unit 4
Claims (4)
果による熱電冷却機構を有し、前記ペルチェ効果による
熱電冷却機構の上部に第2層絶縁膜を有し、前記第2層
絶縁膜上に機能回路素子を有することを特徴とする半導
体集積回路。(1) A thermoelectric cooling mechanism based on the Peltier effect is provided on a first layer insulating film in an integrated circuit chip, a second layer insulating film is provided on top of the thermoelectric cooling mechanism using the Peltier effect, and the second layer insulating film A semiconductor integrated circuit having a functional circuit element thereon.
熱電冷却機構として、第1層絶縁膜上に各々が絶縁物で
分離された第1層目の第1金属から第n金属を有し、第
1層目の第2金属から第n−1金属上に絶縁物で分離さ
れたp型とn型の半導体を有し、第1金属上にn型半導
体を、第n金属上にp型半導体を有し、0<i<nとし
て第i金属上のn型半導体の上部と、第i+1金属上の
p型半導体の上部とを接続する各々が絶縁物で分離され
た第2層目の第1金属を有し、第2層目の金属上に第2
層絶縁膜を有することを特徴とする半導体集積回路。(2) A thermoelectric cooling mechanism based on the Peltier effect according to claim 1, having first to nth metals in the first layer, each separated by an insulator, on the first layer insulating film. , has p-type and n-type semiconductors separated by an insulator from the second metal to the n-1th metal in the first layer, with the n-type semiconductor on the first metal and the p-type semiconductor on the n-th metal. a second layer having a type semiconductor and connecting the upper part of the n-type semiconductor on the i-th metal and the upper part of the p-type semiconductor on the i+1-th metal as 0<i<n, each separated by an insulator; of the first metal, and a second layer of metal on the second layer of metal.
A semiconductor integrated circuit characterized by having a layered insulating film.
徴とする半導体集積回路。(3) A semiconductor integrated circuit characterized by having a temperature sensor within an integrated circuit chip.
熱電冷却機構と、特許請求の範囲第3項記載の温度セン
サを有し、前記温度センサから得られた温度を入力とし
て、前記冷却機構に加える電流値を制御して、チップの
温度を調節することを特徴とする半導体集積回路。(4) A thermoelectric cooling mechanism based on the Peltier effect according to claim 1, and a temperature sensor according to claim 3, and the temperature obtained from the temperature sensor is input to the cooling mechanism. A semiconductor integrated circuit that adjusts the temperature of a chip by controlling the value of current applied to the circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1308693A JPH03167870A (en) | 1989-11-28 | 1989-11-28 | semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1308693A JPH03167870A (en) | 1989-11-28 | 1989-11-28 | semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03167870A true JPH03167870A (en) | 1991-07-19 |
Family
ID=17984148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1308693A Pending JPH03167870A (en) | 1989-11-28 | 1989-11-28 | semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03167870A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008526035A (en) * | 2004-12-27 | 2008-07-17 | インテル・コーポレーション | Microelectronic assembly with built-in thermoelectric cooler and method for manufacturing the same |
-
1989
- 1989-11-28 JP JP1308693A patent/JPH03167870A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008526035A (en) * | 2004-12-27 | 2008-07-17 | インテル・コーポレーション | Microelectronic assembly with built-in thermoelectric cooler and method for manufacturing the same |
| JP4922947B2 (en) * | 2004-12-27 | 2012-04-25 | インテル・コーポレーション | Microelectronic assembly with built-in thermoelectric cooler and method for manufacturing the same |
| JP2012099836A (en) * | 2004-12-27 | 2012-05-24 | Intel Corp | Microelectronic assembly including built-in thermoelectric cooler and method of fabricating same |
| US8686277B2 (en) | 2004-12-27 | 2014-04-01 | Intel Corporation | Microelectronic assembly including built-in thermoelectric cooler and method of fabricating same |
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