JPH03146673A - Thin film deposition method and thin film deposition equipment - Google Patents

Abstract

PURPOSE:To deposit a good quality film over a large area at a high rate by introducing a raw gas and the plasma produced by an electric discharge into a deposition chamber impressed with an electric field parallel to the surface of a substrate and scanning the electric field with a frequency capable of being followed by the ion. CONSTITUTION:A low frequency electric field parallel to the surface of a substrate 108 is impressed between a plasma producing chamber 105 and the substrate 108 by a counter electrode 103 connected to a low frequency power source 106. A raw gas is introduced into the chamber 105 from a gas inlet 107, and a high frequency power is impressed from an RF power source 104. A part of the plasma produced in the chamber 105 is drawn into the deposition chamber 112 as a plasma current 110. The ion in the plasma is trapped and scanned in the direction parallel to the surface of the substrate 108 by the electric field with a frequency capable of being followed by the ion and impressed on the counter electrode 103 and expanded in parallel to the surface of the substrate 108. Consequently, the amt. of the ion reaching the substrate 108 is controlled, and a deposition reaction is caused with good film thickness distribution.

Description

[Detailed description of the invention]

[Industrial Application Field] The present invention relates to a method and apparatus for forming a deposited film using plasma. More particularly, the present invention relates to a thin film deposition method for forming a high quality deposited film using high frequency discharge including microwaves, and a thin film deposition apparatus most suitable for carrying out the method. [Prior art] Conventionally known plasma CVD (Chemical
Vapor Deposition) method is (i)
A deposited film can be formed at a low temperature of 200 to 400°C, (ii
) Silicon oxide and silicon nitride are used as insulating films in semiconductor processes, and amorphous silicon (A-Si) films are used for solar cells, contact image sensors, and photosensitive drums.
It is applied to the formation of diamond thin films. Most conventional plasma CVD equipment generates plasma by injecting radio waves (RF) between two parallel plate electrodes that face each other, and RF plasma CVD equipment has a simple structure, so it is easy to use. It has the advantage of being easily upsized. However, the conventional parallel plate electrode type RF plasma CV
On the other hand, method D also has the following drawbacks. That is, (i) an ion sheath is formed at each electrode;
A negative self-bias appears on the cathode side, and the ion species in the plasma are attracted to the cathode side, and the impact of the ion species on the anode on which the substrate is arranged is alleviated, but the ion species are still incident on the substrate surface. is present and incorporated into the deposited film, causing an increase in internal stress and defect density, making it impossible to obtain a good quality deposited film. (ii)
(iii) Because the electron density is low at 10" to 10" cm, the decomposition efficiency of the source gas is not so high and the deposition rate is low. In order to improve the above drawback (i) that raw material gases with high energy are difficult to decompose, parallel plate plasma CVD as shown in FIG.
Using a plasma CVD device in which a third electrode is added to the device,
Deposition methods with separate radical generation regions have been proposed [A, Matsuda; J, Non-Cryst
, Solids, L., 687 (1983)]. In FIG. 5, 501 is a cathode electrode, 502 is an anode electrode, 503 is a third electrode for radical separation, 504 is a high frequency RF power source, 505 is a reaction chamber, 506 is a gas inlet,
507 is a sample substrate, 508 is a heater for heating the substrate, 50
9 is an exhaust system. When A-Si is deposited by the above deposition method, it is a good quality A-S with a low unpaired electron density of 1016 to 10 "cm".
i film is obtained. However, it has the disadvantage that the deposition rate is very low at 1 person/sec or less. In addition, in order to solve the drawbacks (i) to (ii) of plasma CVD using RF mentioned above,
155535, JP 59-3018, JP 61-53719, JP 61-21337
As seen in Publication No. 7, electron cycloton resonance (EC
A microwave discharge type plasma CVD apparatus applying R) has been proposed. Figure 6 shows ECR plasma/CV
An example of a schematic configuration diagram of the D device is shown. In FIG. 6, 601 is a plasma generation chamber (having a cavity resonator structure), 602 is a microwave, 603 is a microwave waveguide, 604 is a microwave introduction window, 605 is a magnetic field generator, and 606 is a plasma flow and divergent magnetic field, 607 is a deposition chamber, 608 is a substrate holder, 609 is a sample substrate, 61
0 is a heater for heating the substrate, 611 is a first gas introduction port, 6
12 is a second gas introduction port, and 613 is an exhaust system. ECR
In the plasma CVD method, since electrons absorb the energy of electromagnetic waves under ECR conditions (a magnetic flux density of 875 Gauss is required for microwaves of 2.45 GH2), the electron temperature is ~7 eV.
and the electron density is as high as 10"cm-'. Therefore,
Deposition rates of 1 to 30 persons/sec have been obtained. In addition, the incident ion energy is ~20 eV, which is small compared to the parallel plate plasma CVD method, but the ion species are incident on the substrate surface and are incorporated into the deposited film, so the quality is sufficiently high. It is difficult to obtain membranes regularly,
Furthermore, in order to obtain a deposited film over a large area, the size and weight of the magnetic field generating device must be increased, which increases the manufacturing cost of the device.

[Problem to be solved by the invention]

The present invention is directed to a thin film deposition method that improves the drawbacks of conventional plasma CVD methods and devices, has a high deposition rate, and is capable of obtaining a high-quality deposited film over a large area, and an inexpensive device that is optimal for carrying out the method. is intended to provide.

[Means to solve the problem]

The present inventor has conducted intensive research to solve the above-mentioned problems with conventional plasma CVD methods and apparatuses and to achieve the above object, and has arrived at the present invention. The generated plasma is combined with raw material gas.
It is characterized by introducing an electric field parallel to the surface of the sample substrate into a deposition chamber provided between a plasma generation chamber and the substrate, and scanning the electric field at a frequency that can be followed by ions to form a deposited film on the substrate. This invention relates to a thin film deposition method. Furthermore, the present invention relates to a thin film deposition apparatus having a plasma generation chamber using non-polar discharge and a deposition chamber provided with means for forming a parallel electric field on a substrate surface at a frequency that can be followed by ions. That is, the present invention is based on the knowledge that applying a specific ion control technology to the ECR plasma method etc. is very effective in achieving the above objective.The greatest feature of the present invention is that the plasma generation chamber and the substrate At least one set of electric field generating devices that generate an electric field parallel to the substrate surface is provided between the two, and the electric field is scanned at a frequency that allows the ions to follow, thereby scanning the ions in the plasma in a direction parallel to the substrate surface. The goal is to control the ions that enter the substrate. This makes it possible to uniformly obtain a high-quality deposited film over a large area without reducing the deposition rate. In the present invention, as a result of intensive research, it has been found that the frequency f of the applied electric field is desirably within the range given by the following equation (1). (e = 1.60219xlO-, "Coulomb, E: Applied electric field 1 m: Mass of ion, λ: Mean free path of ion, ■ = Thermal velocity of ion, d: Distance between electrodes) However, do not disturb the discharge. The practical lower limit of the above-mentioned frequency f is 10 Hz or more, more preferably 50 Hz or more. Fig. 8 shows a method in which hydrogen plasma is generated and an electric field is applied in a direction perpendicular to the plasma flow, as shown in Fig. 7. 7 shows the relationship between the frequency of the applied electric field and the ion current density when the ion current is measured using a Faraday cup. In FIG. It is - from the ammeter. From Fig. 8, it can be seen that when the frequency of the applied electric field is lower than fi = eλE / 2πmvd, the ion current density is small, that is, the amount of incident ions is small. That is, when it is less than fi, The ions are well diffused. That is, the ions follow the applied electric field. The waveform of the power supply voltage that generates the applied electric field is preferably a sine wave, a triangular wave, a square wave, a sawtooth wave, or the like. In the present invention, the frequencies specifically used are:
For example, in the case of a pressure of 10-'Torr, the frequency is preferably IMHz or less, more preferably 100kHz or less. The electric field generator includes an electrode for applying an electric field and a power source. It is effective that the electric field applying electrode is preferably provided with one or more pairs, more preferably two or more pairs of electrode plates facing each other. When two or more sets of the opposing electrodes are provided, it is desirable that the opposing electrodes do not exist in the same plane. FIG. 3 is a schematic diagram for specifically explaining the positional relationship between the electrodes and the sample substrate when two sets of electric field applying electrodes are provided. In FIG. 3, 301 and 302 each represent a pair of first . second counter electrode, 303.30
4 is the first. A low frequency power source is used to apply an electric field to the second electrode, 305 is a sample substrate, and 306 is a plasma flow. The direction perpendicular to the sample substrate 305 is shown in FIG.
The first direction is the axial direction. The second counter electrodes 303 and 304 are each arranged symmetrically with respect to the central axis of the sample substrate, and are arranged in the X-axis and y-axis directions parallel to the sample substrate. The plasma flow (not shown) is generated at the first opposite electrode 3 in FIG.
The ions flow in two axial directions from the left side of 01, and the ions spread in the XY force directions to form a deposited film on the sample substrate 305. In the present invention, when two or more sets of electric field applying electrodes are provided, it is preferable to synchronize the power supply frequencies applied to each set. By applying the thin film deposition method and thin film deposition apparatus of the present invention, it is possible to form high quality thin films of amorphous silicon, crystalline silicon, amorphous silicon germanium, silicon nitride, silicon oxide, amorphous silicon carbide, diamond, various compound semiconductors, etc. can. The gas used in the present invention is as follows depending on the type of deposited film. When depositing an amorphous silicon or crystalline silicon thin film, raw material gases include, for example, SiH4 and Sit Ha containing silicon atoms. SiF4,5iHFs, 5iHa Ft, 5iHs
Examples include F, 5i2Fs, 5iCj24,5iHi Cβ2°S i H2C°C. Note that a liquid such as 5iC24 is used after being vaporized by bubbling an inert gas or the like. In addition to the above-mentioned source gases, the material gases used to generate plasma include Hz. F2, Cl22. He, HF, HCl2. Ne. Examples include Ar, Kr, and Xe. As the raw material gas for depositing the amorphous silicon germanium thin film, a gas containing GeH4, GeFa, etc. containing germanium atoms is used, which is a mixture of the silicon atom-containing raw material gas used for the above-mentioned amorphous silicon deposition. Gases used to generate plasma include a mixed gas of a gas containing silicon atoms and a gas containing germanium atoms, as well as H, Fi, and Cat. Examples include He, Ne, HF, HCfl, Ar, Kr, and Xe. The raw material gas for depositing a silicon nitride thin film is:
Gas containing silicon atoms used in the deposition of amorphous silicon mentioned above, or Na, N containing nitrogen atoms
A mixed gas of at least one type of gas selected from Hs and NFs and a gas containing silicon atoms is used. In addition to the above-mentioned source gases, the material gases used to generate plasma include Nz, NHs, HFs, H2, Fz, C
l2z. He, HF, HCl2. Examples include Ne, Ar, Kr, and Xs. In the case of forming silicon nitride, the raw material gas or the gas for generating plasma must contain at least a gas containing nitrogen atoms and a gas containing silicon. The raw material gas for depositing a silicon oxide thin film is:
A gas containing silicon atoms used in the above-described deposition of amorphous silicon or a gas containing oxygen Ox and silicon atoms is used. In addition to the above raw material gases, gases used to generate plasma include Oa, Hz, Fz
,Cat,He. HF, HCl2. Examples include Ne, Ar, Kr, and Xe. In the case of forming silicon oxide, the raw material gas or plasma generation gas must contain at least a gas containing 02 and silicon atoms. In the case of depositing an amorphous silicon carbide thin film, the raw material gas may be the amorphous gas mentioned above. A gas containing silicon atoms used for silicon deposition, a gas containing silicon atoms and carbon atoms such as s i (CH3) 4, or Cf (4, C2H2, Cz H4゜Ca) containing carbon atoms.
A mixed gas of at least one type of gas selected from Hs and the above silicon atom-containing gas is used. In addition to the above-mentioned source gases, the material gases used to generate plasma include H2 and Fx. Cl2s, He, Ne, Ar, HF, HCl2゜Kr
, Xe, etc. In the case of forming amorphous silicon carbide, the source gas or plasma generation gas must contain at least a gas containing carbon atoms and a gas containing silicon atoms. The source gas for depositing a diamond thin film is CH4, Cz Hz, which contains carbon atoms. Ct H-, Cz Ha, CH3COCH3, CH3
0f (such as CH3C0CH, and CHs○
H is used after being vaporized by bubbling an inert gas or the like. In addition to the above carbon atom-containing gas, material gases for plasma generation include Hz, Fi, Cl2t'',
He, HF, HCI. Examples include Ne, Ar, Kr, and Xe. As mentioned above, the raw material gas may also be used as a plasma generation gas. Furthermore, the raw material gas may be diluted with an inert gas such as He or Ar. When adding impurities to the deposited film, the raw material gas PH3, PF, in gas or plasma generating gas. PFs, PCI2s, PCβa, B*Ha
, B F s. -BCAs, BBrs, AsFa, AsCl25
. Gases such as ASHs, Is, 5bHs, and 5bFs are mixed. The reaction pressure for forming thin films of amorphous silicon, crystalline silicon, amorphous silicon germanium, silicon nitride, silicon oxide, and amorphous silicon carbide is 10-! ~10-'Torr is preferred. The reaction pressure to form a diamond thin film is 10-3 to 10
”Torr is preferable. Suitable methods for plasma generation include high frequency discharge, microwave discharge, etc. In order to increase the electron density in the plasma and obtain a high deposition rate, microwave discharge is used. Furthermore, in order to efficiently generate and stabilize plasma, it is also more preferable to apply a magnetic field. Note that the magnetic field is not limited to ECR conditions; It is also possible to apply light energy such as ultraviolet light or laser light to the substrate surface in order to promote the reaction in the thin film deposition reaction. [Examples] The present invention will be specifically described below based on Examples. but,
The present invention is not limited in any way by these Examples. A preferred example of the apparatus of the present invention is shown in FIG. In Fig. 1, 101 is an induction coil, 102 is a substrate holder 1
03 and 113 are first and second opposing electrodes for applying an electric field; 10
4 is an RF power supply for plasma generation (frequency 13.56MHz
), 105 is a plasma generation chamber, 106 and 114 are low frequency power supplies for applying an electric field, 107 is a gas inlet, 108 is a sample substrate, 109 is a heater for heating the substrate, 110 is a plasma flow, 111 is an exhaust system, 112 is a deposition chamber It is. The first feature of this embodiment is that a low frequency electric field parallel to the sample substrate surface is applied between the plasma generation chamber 105 and the sample substrate 108 by the counter electrode 103 to which the low frequency power source 106 is connected. The method of operating the apparatus of this example is as follows. By introducing raw material gas into the plasma generation chamber 105 through the gas inlet 107 and applying high frequency power from the RF power source 104, plasma is generated in the plasma generation chamber 105, and a part of it becomes a plasma flow 110 and is deposited. It is pulled out into the chamber 112. Ions existing in the plasma are trapped and scanned in a direction parallel to the sample substrate surface by an electric field with an ion tracking frequency applied to the counter electrode 103, and spread parallel to the sample substrate surface, controlling the amount of ions that reach the sample substrate. In this state, the deposition reaction occurs with good film thickness distribution. Hereinafter, the results of studying the formation of amorphous silicon using the thin film deposition apparatus shown in FIG. 1 as an example of this apparatus will be specifically explained. The cleaned quartz glass substrate 108 was mounted on the substrate holder 102, and the vacuum was evacuated to a high vacuum region of 1X10-'Torr.The surface temperature of the quartz glass substrate 108 was controlled to 200''C by the heater 109 for heating the substrate. SiH gas is introduced into the plasma generation chamber 105 using IO3CCM from the gas introduction port 107, and the pressure in the plasma generation chamber 105 is reduced to 0.
．． It was controlled at 2 Torr. Then, the distance between the electrodes is 10 cm.
The voltage applied to the opposing electrodes 103 and 113 for applying an electric field is 40
0V, first counter electrode 103 and second counter voltage vU113
The power frequencies of 50 Hz and 2 kHz were applied, respectively. A reaction was carried out for 1 hour with RF power of 100 W, and an amorphous silicon film was formed on the quartz glass substrate. The deposition rate was 3 persons/sec. AMI (100m W/
The ratio G p / Ga of photoconductivity (σp) and dark conductivity (σ4) by light irradiation of crn') was lX10', and the optical band gap (Eg) was 1.75 eV. ESR (electron spin resonance) measurement showed that the unpaired electron density was 7X10"σm-'.The film thickness distribution was 20cmX
It was ±5% within an area of 20 cm. As a comparative example, when the electric field is not applied, the difference is ±1.
3%, and the unpaired electron density was 2X10"Cm-', and the effect of electric field application was remarkable. The second counter electrode was connected to the frequency at which the ion current was large in Figure 8, that is, the frequency at which ions could not follow. The unpaired electron density of the amorphous silicon film formed by applying an IMHz electric field was 5×10”am−’. Fruit 11 Soup λ An embodiment of the apparatus of the present invention will be described with reference to FIG. In FIG. 2, 201 is a plasma generation chamber (cavity resonator structure), 202 is a microwave, 203 is a microwave waveguide,
204 is a microwave introduction window, 205 is a magnetic field generator, 2
06 and 216 are a first counter electrode and a second counter electrode for applying an electric field, respectively, 207 and 217 are a low frequency power source for applying an electric field,
208 is a substrate holder, 209 is a sample substrate, 210 is a heater for heating the substrate, 211 is a first gas inlet, 212 is a second gas inlet, 213 is a plasma flow, 214 is an exhaust system, and 215 is a deposition chamber. . The first feature of the apparatus of this example is that, like the apparatus of Example 1, an electric field parallel to the sample substrate is formed between the plasma generation chamber and the sample substrate (consisting of a counter electrode and a low frequency power source). The reason lies in the provision of an electric field generator. The difference from Example 1 is that plasma was generated by microwave discharge in the presence of a magnetic field. Electrons and ions in the generated plasma are generated by a magnetic field generated by a magnetic field generator 205 and an electric field generator (20
6, 207, 216, 217) in a direction perpendicular to the electric field, which further contributes to improving the thickness distribution of the deposited film. In this example, formation of a silicon nitride film was considered. The cleaned quartz glass substrate and n-type silicon single crystal wafer substrate are mounted on the substrate holder 208, and the IX 10-'T
It was evacuated to a high vacuum region of o r r. The magnetic flux density near the microwave introduction window 204 of the plasma generation chamber 201 is 15
A magnetic field was applied using the magnetic field generator 205 so that the magnetic field was 0.00 Gauss. An applied voltage of 300 V was applied to the counter electrode 206 for applying an electric field with an inter-electrode distance of 15 cm, and the power frequencies of the first and second electric field generators were 60 Hz and 9 kHz, respectively. 203 CCM of N2 is introduced into the plasma generation chamber 201 from the gas inlet 211, and the pressure in the deposition chamber 215 is increased to 5X.
10-'Torr, frequency 2.45
A GHz microwave is transmitted through a microwave waveguide 203.
It was turned on with an effective power of 200W. Next, the gas inlet 212
SiH4 of IO3CCM was introduced into the deposition chamber 215 and reacted for 10 minutes to form a silicon nitride film on the sample substrate 209. The resulting silicon nitride film had a thickness of 4,500 layers and a deposition rate of 7.5 layers/sec. Buffered hydrofluoric acid solution (
The etching rate using 50% HF:40% NH4F=15.85) was 10 people/min. Further, an electrode was formed on silicon nitride formed on an n-type silicon wafer, an MIS type diode was created, and the interfacial charge density was measured, and the result was I x 10"cm-". In the measurement of unpaired electron density by ESR, 2
It was 16cm-'. When we examined the uniformity of the film thickness by arranging many single crystal wafers, we found that the film thickness distribution was 30 cm x 3.
It was within ±5% within an area of 0 cm. The interfacial charge density when no low frequency electric field is applied is 5
10"cm-2 and the unpaired electron density is 9X10"cm-2
3, the film thickness distribution was ±20%. The interfacial charge density of the silicon nitride film formed when an electric field of 200 MHz at a frequency where the ion current is large, that is, a frequency that ions cannot follow in FIG. 8, is applied to the second counter electrode.
0"cm-", the unpaired electron density was 3X 10"cm-'. Polycrystalline silicon was formed using the apparatus shown in FIG. 2 used in Example 2. Apparatus The operations were the same as in Example 2 except for heating the sample substrate.A cleaned quartz glass substrate and a single crystal silicon wafer with a plane orientation of (110) were mounted on the substrate holder 208, and an 8x1
It was evacuated to 0-'Torr. The sample substrate 209 was heated to 350° C. with a substrate heater 210. Magnetic field application and electric field application were performed in the same manner as in Example 2, and the gas inlet 21
1 to ICAO8CCM N2 to plasma generation chamber 2.0
1, and the pressure in the deposition chamber 215 is 3X10-'To
rr, and 200 W of 2.45 GHz microwave power was applied. Next, from the gas inlet 212, SiH, 5SCCM and SiHzCax 5SCC
A mixed gas of M and HCβ ISCCM was introduced and reacted for 1 hour to deposit a silicon film on the sample substrate 209. The thickness of the deposited film obtained was 8000 mm, and the deposition rate was 2.
．． 2 people/sec. Electrodes were formed on a silicon thin film deposited on a quartz glass substrate, and the hole mobility was measured to be 20 crrll/■·sec. As a result of RHEED (reflection high-speed electron diffraction) measurements, polycrystals with <110> orientation grow on quartz substrates, and epitaxial growth occurs on (110) single crystal silicon substrates with <110> orientation close to the substrate. was confirmed. The film thickness distribution was ±7% within an area of 30 cm x 30 cm. 5, which is the frequency at which ions cannot follow the second counter electrode.
The hole mobilities of the polycrystalline silicon film when an electric field of 00 MHz is applied and when no electric field is applied are 2.1 crn"/V・sec and 11 crr?/, respectively.
It was V-sec. Utachi 1 Using the apparatus shown in FIG. 1 used in Example 1, the formation of amorphous silicon germanium was investigated. The operation of the apparatus was the same as in Example 1. The cleaned quartz glass substrate is mounted on the substrate holder 102, and after exhausting to lXl0-'Torr, the substrate temperature is lowered to 1
The temperature was controlled at 90°C. A low frequency electric field was applied in the same manner as in Example 1, and S is Hs was applied from the gas inlet 107.
A mixture of 10SCCM and G e H410sccM.
The plasma was introduced into the plasma generation chamber 105, and the pressure in the plasma generation chamber was controlled to 0.5 Torr. The reaction was carried out for 1 hour with RF power of 50 W, and amorphous silicon germanium having a thickness of 1 μm was obtained. Deposition rate is 2.8 people/s
e c , AM 1 (100mW/cr
Photoconductivity (σ.) and dark conductivity (σ.n”) by light irradiation
The ratio σp/σ6 of d) was 2×10′, and the optical band gap (Eg) was 1.47 eV. The unpaired electron density measured by ESR was ax 10"cm-", and the film thickness distribution was ±5% in an area of 20cm x 20cm.
Met. Engineering Calibration 5A: ±16% when no electric field was applied. Frequency IMHz at which ions cannot follow the second counter electrode
The unpaired electron density of the amorphous silicon germanium film formed by applying the electric field was 2×10'7 cm-'. B-1 According to the present invention, in Example 1, it was found that amorphous silicon having a low unpaired electron density and high photoconductivity and dark conductivity could be formed with a good film thickness distribution without decreasing the deposition rate. In Example 2, the unpaired electron density is low,
It has been found that dense silicon nitride with low interfacial charge density can be obtained over a large area with good thickness distribution. Example 3 showed that polycrystalline silicon with low unpaired electron density and high mobility can be produced in a large area at low temperature. In Example 4, it was found that amorphous silicon germanium having a low unpaired electron density, a large ratio between photoconductivity and dark conductivity, and a small band gap could be formed with a good film thickness distribution. In Examples 1, 2, 3゜4, amorphous silicon,
Although examples of depositing silicon nitride, polycrystalline silicon, and amorphous silicon germanium have been shown, the method is not limited to these, but is also effective in forming amorphous silicon carbide, silicon oxide, diamond, and various compound semiconductors. Further, in Examples 1 and 4, the thin film deposition apparatus according to the present invention shown in FIG. 1 was used, and in Examples 2 and 3, the thin film deposition apparatus according to the present invention shown in FIG. 2 was used. It is not limited to. In other words, it is possible to produce amorphous silicon and amorphous silicon germanium using the apparatus shown in Figure 2.
The deposition rate is higher than when using the apparatus of FIG. In the thin film deposition apparatus used in the example, two sets of low frequency electric field generators were employed as a method of applying an electric field to scan ions, but the number of sets is not limited to two, and it is also possible to use 1a or more than two sets. For example, when depositing a sample substrate while transporting it in a roll-to-roll or in-line multi-chamber separation type reactor, there is an example of a deposition system in which a counter electrode is provided in the same direction as the transport direction of the sample substrate. can give. Fourth
The figure is a schematic diagram of a roll-to-roll type thin film deposition apparatus to which the present invention is applied. In FIG. 4, 401 is a plasma generation chamber, 402 is a deposition chamber, 403 is a counter electrode for applying an electric field, 404 is a low frequency power source for applying an electric field, 405 is a magnetic field generator, 406 is a gas introduction tube, and 407 is a flexible sample. The substrate, 408 is a heater for heating the substrate, and 409 is a substrate winding roll. As described above, the present invention is also effective in application to a continuous deposition apparatus. [Effects of the Invention] As explained above, according to the present invention, a high-quality deposited film can be produced uniformly, over a large area, and at low cost with good productivity compared to conventional plasma CVD methods and equipment. be able to.

[Brief explanation of the drawing]

FIG. 1 is a schematic configuration diagram of an RF thin film deposition apparatus according to the present invention;
FIG. 2 is a schematic configuration diagram of a microwave thin film deposition apparatus according to the present invention, FIG. 3 is a conceptual diagram for explaining the arrangement of electric field applying electrodes according to the present invention, and FIG. 4 is a roll tool to which the present invention is applied.・Roll continuous ti f! A schematic diagram of the equipment; Figure 5 is a diagram of a conventional radical separation type three-electrode plasma CVD equipment; Figure 6 is a diagram of a conventional ECR type microwave plasma CVD equipment.
A schematic configuration diagram of the VD device, Figure 7 is a conceptual diagram of measurement of ion current, and Figure 8 is a diagram showing the relationship between the frequency of the applied electric field and the ion current density.-0 From Figures 1 to 7, 101 ...Induction coil 104.504...RF power supply 103.113, 206, 216, 301°302.4
03...Counter electrode for applying electric field 106, 114, 207
,217゜303.304,404...Low frequency power supply 1 for applying electric field
05.201,401,601--Plasma generation chamber 112.215,402,505,607--Deposition chamber 108, 209. 305,407. 507°60
9...Sample substrate 102.208,608...Substrate holder 109.2
10,408,508,610...Substrate heating heater 107.211,212,406,506°611.6
12...Gas inlet 110.213,306,606...Plasma flow 11
1.214,509,613...exhaust system 202.60
2...Microwave 203.603...Microwave waveguide 204.604
...Microwave introduction window 205.405,605...
Magnetic field generator 409...Flexible substrate winding roll 5
01...Cathode electrode 502...Anode electrode 701...Power source for applying electric field 702...Faraday cup 703...Ammeter l! ! 3 Figure father fI5xiQ8 ερKaro's house F@) Number of clouds (Hz) Figure

Claims (2)

[Claims] (1) Gas is turned into plasma by electric discharge, an electric field parallel to the surface of the substrate is formed on the front surface of the substrate, and the electric field is scanned at a frequency that allows tracking of ions existing in the plasma, thereby generating plasma in the deposition chamber. A thin film deposition method characterized by forming a deposited film consisting of the main constituent elements of a raw material gas on the surface of a substrate by guiding the gas. (2) A plasma generation chamber for generating plasma, a deposition chamber for forming a film on a substrate, means for supplying high frequency power to the plasma generation chamber, and means for heating the substrate installed in the deposition chamber. The thin film deposition apparatus is characterized in that at least one set of means is provided for forming an electric field parallel to the substrate surface on the front surface of the substrate in the deposition chamber and scanning the electric field at a frequency that allows tracking of ions. thin film deposition equipment.