JPH03116801A - Resistor paste - Google Patents
Resistor pasteInfo
- Publication number
- JPH03116801A JPH03116801A JP1252251A JP25225189A JPH03116801A JP H03116801 A JPH03116801 A JP H03116801A JP 1252251 A JP1252251 A JP 1252251A JP 25225189 A JP25225189 A JP 25225189A JP H03116801 A JPH03116801 A JP H03116801A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- coloring pigment
- resistor
- glass powder
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Non-Adjustable Resistors (AREA)
- Conductive Materials (AREA)
Abstract
Description
【発明の詳細な説明】 本発明は、抵抗体ペーストに関するものである。[Detailed description of the invention] The present invention relates to a resistor paste.
［従来の技術］
従来厚膜回路において、セラミックス基板上に電極とし
て銅（Ｃｕ）導体を形成し、その間°に抵抗体ペースト
を印刷し、窒素雰囲気（Ｎ２）巾約８５０〜１０００℃
で焼成される。[Prior art] In a conventional thick film circuit, a copper (Cu) conductor is formed as an electrode on a ceramic substrate, a resistor paste is printed between them, and a nitrogen atmosphere (N2) is heated at a width of about 850 to 1000 degrees Celsius.
It is fired in
次いで、抵抗値の調整のためにレーザートリミングを行
なうが、その際レーザーによるトリミングが十分には行
なわれない。そのため、抵抗体厚膜がカットできるよう
に、レーザーのパワーを上昇させると、抵抗体が切れる
と共に下地の基板までレーザーにより切れ、掘れてしま
う。抵抗体がレーザーにより切れにくい。又、切口にク
ラックが発生する。以上のような問題があった。Next, laser trimming is performed to adjust the resistance value, but the laser trimming is not performed sufficiently at this time. Therefore, if the power of the laser is increased so that the thick film of the resistor can be cut, the resistor will be cut and the underlying substrate will also be cut and dug by the laser. The resistor is difficult to cut by laser. Also, cracks occur at the cut end. There were problems as mentioned above.
［発明の解決しようどする課題］
本発明の目的は、従来技術が有していた前述の欠点を解
消しようとするものであり、従来知られていなかった抵
抗体ペーストを新規に提供することを目的とするもので
ある。[Problems to be Solved by the Invention] The purpose of the present invention is to solve the above-mentioned drawbacks of the prior art, and to provide a novel resistor paste that has not been known in the past. This is the purpose.
［課題を解決するための手段］
本発明は、前述の問題点を解決すべ（なされたものであ
り、無機成分が実質的にガラス粉末とＺｒＢａ、ＬａＢ
５．ＴａＮ、ＴｉＮ、Ｔａ５ｉｚ、Ｍｏ５ｉａ、Ｍｏｚ
Ｃ，Ｗｅのいずれか１つとレーザー光を吸収できる着色
顔料を含有することを特徴とする抵抗ペースト等を提供
するものである。[Means for Solving the Problems] The present invention has been made to solve the above-mentioned problems, and the inorganic components are substantially composed of glass powder, ZrBa, and LaB.
5. TaN, TiN, Ta5iz, Mo5ia, Moz
The present invention provides a resistance paste or the like characterized by containing one of C and We and a colored pigment capable of absorbing laser light.
本発明の目的は、導電物質粉末と着色顔料及びガラス粉
末からなるドーザ−トリミング特性のよい抵抗体ペース
トを作製することである。SUMMARY OF THE INVENTION An object of the present invention is to produce a resistor paste with good dozer-trimming properties, which is composed of a conductive material powder, a colored pigment, and a glass powder.
本発明に使用するガラスはどんなものでも使用できるが
、５ｉＯａ −８ｍＯｓ系等のガラスが低温度で焼結し
やすく望ましい。Although any type of glass can be used in the present invention, glasses such as 5iOa-8mOs are preferred because they can be easily sintered at low temperatures.
尚、以下％は特に記載しない限り重量％を意味する。In addition, below, % means weight % unless otherwise specified.
本発明にかかるガラス粉末の一例としては、無機成分が
実質的に％で
Ｓｉ０□ ８〜６０％
Ａ１ａＯｓ ０〜３０％Ｍｇ００〜４０
％
Ｃａ００〜４０％
５ｒ００〜６０％
Ｂａ０ ０〜６０％
ＭｇＯ＋ＣａＯ＋ＳｒＯ＋ＢａＯ１０〜６０％ＬＬＯ＋
ＮａｚＯ＋ＬＯ＋Ｃ３２００〜１０％ｐｂｏ
ｏ〜ｌＯ％Ｚｎ０
０〜４０％Ｔｉ０ｚ＋ Ｚｒ０ｉ
Ｏ〜１０％ＢｚＯｉ
５〜４０％からなり、順次これらについ
て説明する。As an example of the glass powder according to the present invention, the inorganic components are substantially % Si0□ 8-60% A1aOs 0-30% Mg00-40
% Ca00~40% 5r00~60% Ba0 0~60% MgO+CaO+SrO+BaO10~60%LLO+
NazO+LO+C3200~10%pbo
o~lO%Zn0
0~40% Ti0z+ Zr0i
O~10%BzOi
It consists of 5 to 40%, and these will be explained in order.
かかる組成において、ＳｉＯ□はガラスのネットワーク
フォーマ−であり、８％より少ないと、軟化点が低（な
りすぎ耐熱性が低下し、再焼成時に変形を生じやすくな
るので好ましくない。In such a composition, SiO□ is a glass network former, and if it is less than 8%, the softening point becomes too low (too much), which lowers heat resistance and tends to cause deformation during re-firing, which is not preferable.
一方、Ｓｉｎｇが６０％より多いと、軟化点が高（なり
過ぎ、焼成時にガラスの流動が悪くなり導電物質粉末を
覆って濡らすことができず焼結層の空孔が多くなりすぎ
、抵抗の安定性が悪（なるので適当でない。望ましくは
、１５〜５５％の範囲である。On the other hand, if Sing is more than 60%, the softening point will be too high (too high), the flow of the glass will be poor during firing, it will not be able to cover and wet the conductive material powder, and the sintered layer will have too many pores, resulting in a decrease in resistance. It is not suitable because it results in poor stability. Desirably, it is in the range of 15 to 55%.
Ａ１１０．は必須ではないが、添加することにより、耐
湿性の向上に効果がある。３０％を超えるとガラスの軟
化温度が高くなり、焼結性が悪くなり適当でない。望ま
しくは２８％以下である。A110. Although not essential, its addition is effective in improving moisture resistance. If it exceeds 30%, the softening temperature of the glass will become high and the sinterability will deteriorate, making it unsuitable. It is preferably 28% or less.
ＭｇＯ＋ＣａＯ＋ＳｒＯ＋ＢａＯはガラス粉末製造時の
溶解性を向上さすため及び熱膨張係数を調整する目的で
添加する。１０％より少ないと、上記の溶解性が十分に
向上しないと共にガラス製造時に失透を生じやすく、６
０％を超えると、熱膨張係数が大きくなりすぎ、いずれ
も適当でない。望ましくは１５〜５５％の範囲である。MgO+CaO+SrO+BaO is added for the purpose of improving solubility during glass powder production and adjusting the thermal expansion coefficient. If it is less than 10%, the above-mentioned solubility will not be improved sufficiently and devitrification will easily occur during glass production.
If it exceeds 0%, the coefficient of thermal expansion becomes too large, and neither is suitable. It is preferably in the range of 15 to 55%.
また、上記ＭｇＯ＋（：ａＯ＋ｓｒｏ＋Ｂａｏの内のＭ
ｇＯ，ＣａＯはそれぞれ４０％以上であると熱膨張係数
が大きくなりすぎ不適当である。望ましい範囲は０〜３
５％である。上記ＭｇＯ＋ＣａＯ＋ＳｒＯ＋ＢａＯの内
のＳｒＯ。In addition, M in the above MgO+(:aO+sro+Bao)
If each of gO and CaO is 40% or more, the coefficient of thermal expansion becomes too large, which is inappropriate. Desirable range is 0-3
It is 5%. SrO in the above MgO+CaO+SrO+BaO.
ＢａＯは６０％以上であると熱膨張係数が大きくなりす
ぎ不適当である。望ましい範囲は０〜５５％である。If the BaO content is 60% or more, the coefficient of thermal expansion becomes too large, which is inappropriate. A desirable range is 0-55%.
ＬｉｚＯ＋Ｎａ＊０＋ＫｉＯ＋Ｃ３ｚＯは必須ではない
が、添加することにより、ガラスの溶解性の向上を図る
ことができる。１０％を越えると、熱膨張係数が大きく
なりすぎ、基板とのマツチングが悪くなり、焼成後厚膜
が入る可能性が大となり適当でない７田ましくけ８％ｉ
′ノ下であるーＰｂＯは必須ではないが、ガラスのフラ
ックス成分としての効果がある。１０％を超えると抵抗
値が高くなりすぎ適当でない。望ましくは５％以下であ
る。Although LizO+Na*0+KiO+C3zO is not essential, by adding it, the solubility of the glass can be improved. If it exceeds 10%, the coefficient of thermal expansion will become too large, the matching with the substrate will be poor, and there will be a high possibility that a thick film will be formed after firing, making it unsuitable.
Although PbO is not essential, it is effective as a flux component for glass. If it exceeds 10%, the resistance value becomes too high and is not suitable. It is preferably 5% or less.
ＺｎＯは必須ではないが、ガラスの溶解性の改善のため
に４０％まで添加することが可能であり、３５％以下が
望ましい範囲である。Although ZnO is not essential, it can be added up to 40% to improve the solubility of the glass, with a desirable range of 35% or less.
Ｚｒ０ｔ＋ＴｉＯ□は必須ではないが、添加することに
より、抵抗体の耐湿信頼性を向上さすことができる。添
加量は１０％が可能であるが、望ましくは７％以下であ
る。Although Zr0t+TiO□ is not essential, adding it can improve the moisture resistance reliability of the resistor. The amount added can be 10%, but is preferably 7% or less.
Ｂ２０．はフラックス成分として用いるが、 ５％より
少ないと軟化点が高くなり、焼結不足となり焼結層に空
孔が多くなりすぎる。また４０％を超えるとガラスの耐
水性が低下し適当でない。B20. is used as a flux component, but if it is less than 5%, the softening point will be high, resulting in insufficient sintering and too many pores in the sintered layer. Moreover, if it exceeds 40%, the water resistance of the glass decreases and is not suitable.
望ましくは、７〜３８％の範囲である。Desirably, it is in the range of 7 to 38%.
着色顔料としては、８５０〜１１００℃の抵抗体の焼成
条件において、褪色しない耐熱を有するものが好ましく
、レーザーの波長近辺において、レーザーの吸１１Ｖ
特性を有する物質であることが必要である。The coloring pigment is preferably one that has heat resistance that does not fade under the firing conditions of the resistor at 850 to 1100°C, and has a laser absorption of 11V in the vicinity of the laser wavelength.
It is necessary that the substance has certain characteristics.
この様な耐熱性の着色顔料は、鉄酸化物、コバルト酸化
物、クロム酸化物、マンガン酸化物、アルミニウム酸化
物、銅酸化物、亜鉛酸化物、ニッケル酸化物、チタン酸
化物などの酸化物成分からなる化合物で一般的に市販さ
れている酸化物系顔料である。Such heat-resistant color pigments are made of oxide components such as iron oxide, cobalt oxide, chromium oxide, manganese oxide, aluminum oxide, copper oxide, zinc oxide, nickel oxide, titanium oxide, etc. It is a commonly commercially available oxide pigment.
例えば、抵抗のレーザートリミングに使用される通常の
ＩｔＬｍ付近の波長のレーザーの場合は、Ｆｅ２ｒｓ
、 Ｃｏｄ、 ＣｒｚＯｚ 、 ＭｎＯ，Ｃｕｂ、 Ｎ
ｉｐ、 Ｖ＊Ｏａを単独又は並用して使用できる。For example, in the case of a laser with a wavelength around ItLm, which is normally used for laser trimming of resistors, Fe2rs
, Cod, CrzOz, MnO,Cub, N
ip and V*Oa can be used alone or in combination.
更には、
ＣｒｚＯｉ−ＮｉＯ（緑）
ＦｅｉＯｓ−ＭｎＯ（黒）
Ｆｅ２０ｓ−Ｃｒ２０ｓ （黒）
Ｆｅａｒｓ−Ｃｒａｂｓ ＣｏＯ（黒）ＦｅｇＯａ−
Ｃｒ２ｂｓ−Ｃｏｓｔ４−ＭｎＯ（黒）Ｆｅｉｇｎ−Ｃ
ｒａｂｓ−Ｃｏｓｔ４−ＭｎＯ−Ｎｉｏ （黒）Ｃｕ
Ｏ−Ｃｒａｂｓ （黒）
ＣｕＯ−Ｆｅａｒｓ −ＭｎＯ（黒）
等からなる通常市販されている着色顔料が使用できる。Furthermore, CrzOi-NiO (green) FeiOs-MnO (black) Fe20s-Cr20s (black) Fears-Crabs CoO (black) FegOa-
Cr2bs-Cost4-MnO (black) Feign-C
rabs-Cost4-MnO-Nio (black) Cu
Usually commercially available colored pigments such as O-Crabs (black), CuO-Fears -MnO (black), etc. can be used.
以上の中で、黒色のものがレーザーの吸収効率がよいの
で望ましく、この中でＣｒ１ｅｓ、Ｎｉｐ。Among the above, black ones are preferable because they have good laser absorption efficiency, and among these, Cr1es and Nip are preferable.
ＦｅｇＯｓ、ＭｎＯ，Ｃｏｏが望ましく、 Ｆｅａｒｓ
−ＭｎＯ（黒）、Ｆｅ２０ｓ−Ｃｒａｂｓ（黒〕、Ｆｅ
ａｒｓ−Ｃｒａｂｓ −Ｃｏｏ（黒）、Ｆｅａｒｓ −
ｃｒ＊ｏｓ −Ｃｏｓｔ＜ Ｍｎ０（黒）、Ｆｅ、
Ｏ，−ＣｒｓＯｓ −ＣｏａＬ −ＭｎＯ−Ｎｉｐ（黒
）、ＣｕＯ−Ｃｒ１ｅｓ（黒）、ＣｕＯ−Ｆｅｚｅｓ
−Ｍｎ０（黒）が望ましい。FegOs, MnO, Coo are preferable, Fears
-MnO (black), Fe20s-Crabs (black), Fe
ars-Crabs-Coo (black), Fears-
cr*os −Cost< Mn0 (black), Fe,
O,-CrsOs-CoaL-MnO-Nip (black), CuO-Cr1es (black), CuO-Fezes
-Mn0 (black) is desirable.
以上述べた着色顔料にかかる物質は本発明の抵抗ペース
ト中に実質的に０．０５〜２０％含有されることが必要
であり、０．１〜１０％が望ましい範囲である。It is necessary that the substance related to the coloring pigment described above be contained in the resistance paste of the present invention in an amount of substantially 0.05 to 20%, and a desirable range is 0.1 to 10%.
また、上記本発明にかかる着色顔料にかかる物質が主成
分であることが必要であるが、他の物質を含有していて
も使用できる。尚、該着色顔料の平均粒径は、均一に分
散されるように０、００１〜１μ程度が好ましい
導電物質としては、ＺｒＢ＊、ＬａＢａ、ＴａＮ、Ｔｉ
Ｎ、ＴａＳｉ２゜Ｍｏ５ｉａ、 ＭｏｇＣ，ｗｃが使用
できる。Further, although it is necessary that the substance related to the coloring pigment according to the present invention is the main component, it can be used even if it contains other substances. The average particle size of the colored pigment is preferably about 0,001 to 1μ so that it can be uniformly dispersed. Examples of the conductive substance include ZrB*, LaBa, TaN, and Ti.
N, TaSi2°Mo5ia, MogC, wc can be used.
本発明の抵抗体ペーストの組成物は、各粉末が上記割合
に混合されているものであり、以下本発明の抵抗体ペー
ストの作製方法とそれを使用した厚膜回路の製造の一例
について説明する。The composition of the resistor paste of the present invention is one in which each powder is mixed in the above-mentioned proportions.Hereinafter, a method for producing the resistor paste of the present invention and an example of manufacturing a thick film circuit using the same will be explained. .
上記本発明の抵抗体ペーストの組成物に有機バインダー
、溶剤からなる有機ビヒクルを添加し、混練し、ペース
ト状とする。この有機バインダーとしては、エチルセル
ロース、アクリル樹脂、エチレン−酢酸ビニル共重合樹
脂、ポリα−メチルスチレン樹脂、溶剤としては、α−
テルピネオール、ブチルカルピトールアセテート、ブチ
ルカルピトール、２，２．４−トリメチルペンタンジオ
−ルー１．３−モノイソブチレート、ジエチレングリコ
ールジ−ｎ−ブチルエーテル等が通常使用できる。さら
に分散剤として界面活性剤を添加してもよい。An organic vehicle consisting of an organic binder and a solvent is added to the composition of the resistor paste of the present invention and kneaded to form a paste. The organic binder includes ethyl cellulose, acrylic resin, ethylene-vinyl acetate copolymer resin, polyα-methylstyrene resin, and the solvent includes α-
Terpineol, butyl carpitol acetate, butyl carpitol, 2,2,4-trimethylpentanedio-1,3-monoisobutyrate, diethylene glycol di-n-butyl ether, etc. can be commonly used. Furthermore, a surfactant may be added as a dispersant.
次いで焼成後の固化したアルミナ基板、又はガラスセラ
ミックス等のセラミックス基板上に導体を作成するため
に例えばＣｕペーストを所定の回路に印刷、乾燥後、通
常酸素濃度２０ｐｐｍ以下の窒素雰囲気中で８５０〜１
０００℃、５〜２０分で焼成する。この焼成条件の望ま
しい範囲は８８０〜９５０℃、７〜１５分である。次い
で、抵抗を設けるべき所定の箇所に上記本発明の抵抗体
ペーストを印刷した後乾燥させ、上記窒素雰囲気中、８
５０〜１０００℃、５〜２０分で焼成する。この焼成条
件の望ましい範囲は８８０〜９５０℃、７〜１５分であ
る。Next, in order to create a conductor on the solidified alumina substrate after firing or a ceramic substrate such as glass ceramics, for example, Cu paste is printed on a predetermined circuit, and after drying, it is heated to 850~1 in a nitrogen atmosphere with an oxygen concentration of usually 20 ppm or less.
Bake at 000°C for 5 to 20 minutes. The preferred range of firing conditions is 880 to 950°C and 7 to 15 minutes. Next, the resistor paste of the present invention is printed on a predetermined location where a resistor is to be provided, dried, and then heated in the nitrogen atmosphere for 8 hours.
Bake at 50-1000°C for 5-20 minutes. The preferred range of firing conditions is 880 to 950°C and 7 to 15 minutes.
多層セラミックス基板−括焼成の場合は、上記Ｃｕペー
ストと本発明の抵抗体ペーストを印刷したセラミックス
基板用等のセラミックスのグリーンシートを熱圧着後積
層し、上記窒素雰囲気中で８５０〜１０００℃、数分〜
数時間で一括焼成、多層基板を作成する。In the case of bulk firing of multilayer ceramic substrates, green sheets of ceramics such as those for ceramic substrates printed with the above-mentioned Cu paste and the resistor paste of the present invention are laminated after thermocompression bonding, and then heated at 850 to 1000°C in the above nitrogen atmosphere for several seconds. Minutes~
Batch firing and creating multilayer boards in a few hours.
また、ガラス溶解時に清澄剤、溶融促進剤として硝酸塩
、亜ヒ酸、酸化アンチモン、硫酸塩、フッ化物、塩化物
等を０〜５％添加することができる。Further, during glass melting, 0 to 5% of nitrates, arsenous acid, antimony oxide, sulfates, fluorides, chlorides, etc. can be added as clarifying agents and melting accelerators.
［実施例］
目標組成となるように、各原料を調合し、これを白金ル
ツボに入れ、１３５０〜１５００℃で２〜３時間撹拌し
つつ加熱撹拌した。次いでこれを水砕又はフレーク状と
し、更に粉砕装置により平均粒径０．５〜６μｍになる
ように粉砕し、前記組成範囲のＳｉＯ□−８２０，系の
ガラス粉末を製造した。次いで表−１に示す導電物質粉
末を平均粒径０．０１〜５μｍになるように調整した。[Example] Each raw material was prepared to have a target composition, placed in a platinum crucible, and heated and stirred at 1350 to 1500°C for 2 to 3 hours with stirring. Next, this was pulverized into water or flakes, and further pulverized using a pulverizer to an average particle size of 0.5 to 6 μm to produce SiO□-820 glass powder having the composition range described above. Next, the conductive material powder shown in Table 1 was adjusted to have an average particle size of 0.01 to 5 μm.
次いで上記のガラス粉末と導電物質粉末を表−１に記載
の割合で混合し、本発明による１２種類の組成物を得た
。Next, the above glass powder and conductive material powder were mixed in the proportions shown in Table 1 to obtain 12 types of compositions according to the present invention.
次いでこれらに有機バインダーとしてエチルセルロース
、溶剤としてα−テルビテオールからなる有機ビヒクル
を添加し、混練し、粘度が３０Ｘ ｌＯ’ｃｐｓのペー
ストを作成した。次いでアルミナ基板上に電極としてＣ
ｕペーストを所定の回路にスクリーン印刷、乾燥し、窒
素雰囲気中９００℃、１０分で焼成した。Next, an organic vehicle consisting of ethyl cellulose as an organic binder and α-terbiteol as a solvent was added and kneaded to prepare a paste having a viscosity of 30×1O'cps. Next, C was placed on the alumina substrate as an electrode.
The u-paste was screen printed into a predetermined circuit, dried, and fired at 900° C. for 10 minutes in a nitrogen atmosphere.
次いで、抵抗所定箇所に上記抵抗体ペーストを２００メ
ツシユスクリーンでスクリーン印刷し、乾燥し、Ｎ２中
で９００℃、１０分で焼成した。Next, the above resistor paste was screen printed on predetermined locations of the resistor using a 200 mesh screen, dried, and fired at 900° C. for 10 minutes in N2.
焼成膜厚は約１５μｍであった。The fired film thickness was about 15 μm.
かくして回路を作成した。この回路素子について、抵抗
値を測定した。次いでそれらについてレーザートリミン
グを行なった。これらの結果を表−１に記載した。表−
１にはフルカットのレーザートリミング後の抵抗値を記
載した。Thus, the circuit was created. The resistance value of this circuit element was measured. Then laser trimming was performed on them. These results are listed in Table-1. Table -
1 shows the resistance value after full cut laser trimming.
表−１から明らかなように、本発明による組成物はレー
ザートリミング性、トリミング後の抵抗特性に優れ、厚
膜回路用抵抗体ペーストとして、十分使用できる特性を
有する。As is clear from Table 1, the composition according to the present invention has excellent laser trimming properties and resistance properties after trimming, and has properties that allow it to be used satisfactorily as a resistor paste for thick film circuits.
比較例として本発明による組成物以外のものについても
同様の評価を行なったので表−２に記載した。As comparative examples, compositions other than those according to the present invention were also evaluated in the same manner and are listed in Table 2.
表−１には、レーザー光の波長（約１μｍ）で測定した
吸収率を示す。測定には反射スペクトルを測定し、（１
−反射率） Ｘ １００（％）として算出した。Table 1 shows the absorption rate measured at the wavelength of laser light (approximately 1 μm). For measurement, the reflection spectrum is measured and (1
-Reflectance) It was calculated as 100 (%).
［作用・効果］
本発明において、抵抗トリミング用のレーザーの吸収率
を上げた抵抗体は、レーザーの吸収を上げるためカット
特性を向上させる作用力Ｓある。[Function/Effect] In the present invention, the resistor with increased laser absorption for resistor trimming has an acting force S that improves cutting characteristics in order to increase laser absorption.
Claims (1)
Ｂ＿６，ＴａＮ，ＴｉＮ，ＴａＳｉ＿２，ＭｏＳｉ＿２
，Ｍｏ＿２Ｃ，ＷＣのいずれか１つとレーザー光を吸収
できる着色顔料を含有することを特徴とする抵抗ペース
ト。 ２）無機成分が実質的にガラス粉末とＺｒＢ＿２，Ｌａ
Ｂ＿６，ＴａＮ，ＴｉＮ，ＴａＳｉ＿２，ＭｏＳｉ＿２
，Ｍｏ＿２Ｃ，ＷＣのいずれか１つとＦｅ＿２Ｏ＿３＋
ＣｏＯ＋Ｃｒ＿２Ｏ＿３＋ＭｎＯ＋ＣｕＯ＋ＮｉＯ＋Ｖ
＿２Ｏ＿５を０．０５〜２０重量％含有することを特徴
とする抵抗ペースト。[Claims] 1) The inorganic components are essentially glass powder and ZrB_2, La
B_6, TaN, TiN, TaSi_2, MoSi_2
, Mo_2C, and WC, and a coloring pigment capable of absorbing laser light. 2) Inorganic components are essentially glass powder and ZrB_2, La
B_6, TaN, TiN, TaSi_2, MoSi_2
, Mo_2C, WC and Fe_2O_3+
CoO+Cr_2O_3+MnO+CuO+NiO+V
A resistance paste characterized by containing _2O_5 in an amount of 0.05 to 20% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1252251A JPH03116801A (en) | 1989-09-29 | 1989-09-29 | Resistor paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1252251A JPH03116801A (en) | 1989-09-29 | 1989-09-29 | Resistor paste |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03116801A true JPH03116801A (en) | 1991-05-17 |
Family
ID=17234628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1252251A Pending JPH03116801A (en) | 1989-09-29 | 1989-09-29 | Resistor paste |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03116801A (en) |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03246901A (en) * | 1990-02-23 | 1991-11-05 | Hitachi Ltd | Thick film resistor composition, hybrid IC using the composition, and manufacturing method thereof |
| US9814374B2 (en) | 2010-12-09 | 2017-11-14 | Endochoice Innovation Center Ltd. | Flexible electronic circuit board for a multi-camera endoscope |
| US9901244B2 (en) | 2009-06-18 | 2018-02-27 | Endochoice, Inc. | Circuit board assembly of a multiple viewing elements endoscope |
| US9986899B2 (en) | 2013-03-28 | 2018-06-05 | Endochoice, Inc. | Manifold for a multiple viewing elements endoscope |
| US9986892B2 (en) | 2010-09-20 | 2018-06-05 | Endochoice, Inc. | Operational interface in a multi-viewing element endoscope |
| US9993142B2 (en) | 2013-03-28 | 2018-06-12 | Endochoice, Inc. | Fluid distribution device for a multiple viewing elements endoscope |
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| US10092167B2 (en) | 2009-06-18 | 2018-10-09 | Endochoice, Inc. | Multiple viewing elements endoscope system with modular imaging units |
| US10165929B2 (en) | 2009-06-18 | 2019-01-01 | Endochoice, Inc. | Compact multi-viewing element endoscope system |
| US10203493B2 (en) | 2010-10-28 | 2019-02-12 | Endochoice Innovation Center Ltd. | Optical systems for multi-sensor endoscopes |
| US10470649B2 (en) | 2011-12-13 | 2019-11-12 | Endochoice, Inc. | Removable tip endoscope |
| US10499794B2 (en) | 2013-05-09 | 2019-12-10 | Endochoice, Inc. | Operational interface in a multi-viewing element endoscope |
| US10723160B2 (en) * | 2018-01-23 | 2020-07-28 | Ferro Corporation | Carbide, nitride and silicide enhancers for laser absorption |
| US10791909B2 (en) | 2009-06-18 | 2020-10-06 | Endochoice, Inc. | Image capture assembly for use in a multi-viewing elements endoscope |
| US10799095B2 (en) | 2009-06-18 | 2020-10-13 | Endochoice, Inc. | Multi-viewing element endoscope |
| US10905320B2 (en) | 2009-06-18 | 2021-02-02 | Endochoice, Inc. | Multi-camera endoscope |
| US11278190B2 (en) | 2009-06-18 | 2022-03-22 | Endochoice, Inc. | Multi-viewing element endoscope |
| US11547275B2 (en) | 2009-06-18 | 2023-01-10 | Endochoice, Inc. | Compact multi-viewing element endoscope system |
| US11889986B2 (en) | 2010-12-09 | 2024-02-06 | Endochoice, Inc. | Flexible electronic circuit board for a multi-camera endoscope |
| US12137873B2 (en) | 2009-06-18 | 2024-11-12 | Endochoice, Inc. | Compact multi-viewing element endoscope system |
| US12204087B2 (en) | 2010-10-28 | 2025-01-21 | Endochoice, Inc. | Optical systems for multi-sensor endoscopes |
| US12220105B2 (en) | 2010-06-16 | 2025-02-11 | Endochoice, Inc. | Circuit board assembly of a multiple viewing elements endoscope |
-
1989
- 1989-09-29 JP JP1252251A patent/JPH03116801A/en active Pending
Cited By (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03246901A (en) * | 1990-02-23 | 1991-11-05 | Hitachi Ltd | Thick film resistor composition, hybrid IC using the composition, and manufacturing method thereof |
| US11471028B2 (en) | 2009-06-18 | 2022-10-18 | Endochoice, Inc. | Circuit board assembly of a multiple viewing elements endoscope |
| US10791909B2 (en) | 2009-06-18 | 2020-10-06 | Endochoice, Inc. | Image capture assembly for use in a multi-viewing elements endoscope |
| US10912445B2 (en) | 2009-06-18 | 2021-02-09 | Endochoice, Inc. | Compact multi-viewing element endoscope system |
| US11278190B2 (en) | 2009-06-18 | 2022-03-22 | Endochoice, Inc. | Multi-viewing element endoscope |
| US12137873B2 (en) | 2009-06-18 | 2024-11-12 | Endochoice, Inc. | Compact multi-viewing element endoscope system |
| US10799095B2 (en) | 2009-06-18 | 2020-10-13 | Endochoice, Inc. | Multi-viewing element endoscope |
| US10092167B2 (en) | 2009-06-18 | 2018-10-09 | Endochoice, Inc. | Multiple viewing elements endoscope system with modular imaging units |
| US10165929B2 (en) | 2009-06-18 | 2019-01-01 | Endochoice, Inc. | Compact multi-viewing element endoscope system |
| US9901244B2 (en) | 2009-06-18 | 2018-02-27 | Endochoice, Inc. | Circuit board assembly of a multiple viewing elements endoscope |
| US11986155B2 (en) | 2009-06-18 | 2024-05-21 | Endochoice, Inc. | Multi-viewing element endoscope |
| US12336686B2 (en) | 2009-06-18 | 2025-06-24 | Endochoice, Inc. | Multi-viewing element endoscope |
| US10905320B2 (en) | 2009-06-18 | 2021-02-02 | Endochoice, Inc. | Multi-camera endoscope |
| US10791910B2 (en) | 2009-06-18 | 2020-10-06 | Endochoice, Inc. | Multiple viewing elements endoscope system with modular imaging units |
| US11547275B2 (en) | 2009-06-18 | 2023-01-10 | Endochoice, Inc. | Compact multi-viewing element endoscope system |
| US12220105B2 (en) | 2010-06-16 | 2025-02-11 | Endochoice, Inc. | Circuit board assembly of a multiple viewing elements endoscope |
| US10080486B2 (en) | 2010-09-20 | 2018-09-25 | Endochoice Innovation Center Ltd. | Multi-camera endoscope having fluid channels |
| US9986892B2 (en) | 2010-09-20 | 2018-06-05 | Endochoice, Inc. | Operational interface in a multi-viewing element endoscope |
| US10203493B2 (en) | 2010-10-28 | 2019-02-12 | Endochoice Innovation Center Ltd. | Optical systems for multi-sensor endoscopes |
| US11543646B2 (en) | 2010-10-28 | 2023-01-03 | Endochoice, Inc. | Optical systems for multi-sensor endoscopes |
| US12204087B2 (en) | 2010-10-28 | 2025-01-21 | Endochoice, Inc. | Optical systems for multi-sensor endoscopes |
| US11889986B2 (en) | 2010-12-09 | 2024-02-06 | Endochoice, Inc. | Flexible electronic circuit board for a multi-camera endoscope |
| US9814374B2 (en) | 2010-12-09 | 2017-11-14 | Endochoice Innovation Center Ltd. | Flexible electronic circuit board for a multi-camera endoscope |
| US10898063B2 (en) | 2010-12-09 | 2021-01-26 | Endochoice, Inc. | Flexible electronic circuit board for a multi camera endoscope |
| US11497388B2 (en) | 2010-12-09 | 2022-11-15 | Endochoice, Inc. | Flexible electronic circuit board for a multi-camera endoscope |
| US11291357B2 (en) | 2011-12-13 | 2022-04-05 | Endochoice, Inc. | Removable tip endoscope |
| US12290241B2 (en) | 2011-12-13 | 2025-05-06 | Endochoice, Inc. | Removable tip endoscope |
| US10470649B2 (en) | 2011-12-13 | 2019-11-12 | Endochoice, Inc. | Removable tip endoscope |
| US9993142B2 (en) | 2013-03-28 | 2018-06-12 | Endochoice, Inc. | Fluid distribution device for a multiple viewing elements endoscope |
| US11925323B2 (en) | 2013-03-28 | 2024-03-12 | Endochoice, Inc. | Fluid distribution device for a multiple viewing elements endoscope |
| US11793393B2 (en) | 2013-03-28 | 2023-10-24 | Endochoice, Inc. | Manifold for a multiple viewing elements endoscope |
| US10905315B2 (en) | 2013-03-28 | 2021-02-02 | Endochoice, Inc. | Manifold for a multiple viewing elements endoscope |
| US9986899B2 (en) | 2013-03-28 | 2018-06-05 | Endochoice, Inc. | Manifold for a multiple viewing elements endoscope |
| US12232699B2 (en) | 2013-03-28 | 2025-02-25 | Endochoice, Inc. | Manifold for a multiple viewing elements endoscope |
| US10925471B2 (en) | 2013-03-28 | 2021-02-23 | Endochoice, Inc. | Fluid distribution device for a multiple viewing elements endoscope |
| US10499794B2 (en) | 2013-05-09 | 2019-12-10 | Endochoice, Inc. | Operational interface in a multi-viewing element endoscope |
| US10723160B2 (en) * | 2018-01-23 | 2020-07-28 | Ferro Corporation | Carbide, nitride and silicide enhancers for laser absorption |
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