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JPH023230A - Formation of insulating film - Google Patents

Formation of insulating film

Info

Publication number
JPH023230A
JPH023230A JP15027788A JP15027788A JPH023230A JP H023230 A JPH023230 A JP H023230A JP 15027788 A JP15027788 A JP 15027788A JP 15027788 A JP15027788 A JP 15027788A JP H023230 A JPH023230 A JP H023230A
Authority
JP
Japan
Prior art keywords
resin
piston
warnish
solvent
force
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15027788A
Other languages
Japanese (ja)
Inventor
Shinichi Hara
原 眞一
Eisei Togawa
戸川 衛星
Saburo Suzuki
三郎 鈴木
Masanobu Hanazono
雅信 華園
Takashi Kawabe
川辺 隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15027788A priority Critical patent/JPH023230A/en
Publication of JPH023230A publication Critical patent/JPH023230A/en
Pending legal-status Critical Current

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  • Magnetic Heads (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To remove a bubble defect for obtaining a stably flat resin film by making a plate putting force from above at the time of heating resin. CONSTITUTION:After applying resin warnish 42, the force is put from the upper part with a piston 43. When resin itself has a thermosetting property, once a solvent may be made to volatilize followed by hardening. The surface of the piston in contact with warnish 42 is fitted up with a porous substance. It is necessary that the porous substance 44 does not stick to warnish 42 so that fluorine resin or the like is selected. After force is put on a substrate 1 with the piston 43, heating is performed by a heater 45. Warnish 42 generates volume contraction due to the volatilized solvent, a flow is generated by the force of the piston 43 to always maintain flatness of the surface. A resin film having the flat surface can be formed in the stage wherein the volatilization of the solvent is finally finished. The volatilized solvent passes through the porous substance 44 for being discharged to an outside system. Consequently, it is excluded that bubbles are generated between the piston 43 are warnish 42 to produce a defect.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は薄膜素子の表面上に被膜を形成する方法に係り
、特に表面に凹凸状等の非平面部を有する基板の非平面
部に、平面状の表面を有する被膜の形成方法に関する。
Detailed Description of the Invention [Industrial Application Field] The present invention relates to a method of forming a film on the surface of a thin film element, and particularly to a method for forming a film on a non-planar part of a substrate having a non-planar part such as an uneven surface on the surface. The present invention relates to a method of forming a coating having a planar surface.

〔従来の技術〕[Conventional technology]

薄膜磁気ヘッド、LSIの多層配線等の薄膜素子を作製
する工程においては、導体パターン、絶縁膜パターン等
を形成する時に必然的にパターンによる凹凸を生ずる。
In the process of manufacturing thin film elements such as thin film magnetic heads and multilayer wiring for LSIs, when forming conductor patterns, insulating film patterns, etc., unevenness is inevitably caused by the patterns.

この凹凸は後工程において該凹凸上に形成する導体の断
線、絶縁膜の絶縁不良、ホトレジストパターンの寸法ば
らつき等の要因となる。そこで凹凸を無くすあるいは減
らす工夫が各種なされている。特に樹脂を用いた平坦化
が有効な手段として使われている。この−例を第2図に
示す、第2図において、基板1上に導体膜2のパターン
を形成しである。該導体膜2を覆うように樹脂膜3が塗
布形成されている。ここで。
These irregularities become factors such as disconnection of the conductor formed on the irregularities, poor insulation of the insulating film, and dimensional variations in the photoresist pattern in a subsequent process. Therefore, various efforts have been made to eliminate or reduce the unevenness. In particular, flattening using resin is used as an effective means. An example of this is shown in FIG. 2, in which a pattern of a conductor film 2 is formed on a substrate 1. A resin film 3 is formed by coating so as to cover the conductor film 2. here.

樹脂は塗布後の熱硬化途中において流動するために平坦
化が生ずる。この樹脂膜3上に第2の導体膜4を形成し
、2層配線を作成する。樹脂により段差が緩和されるた
め、段切れ等が起こりにくく、良好な配線が可能となる
。しかし、導体膜2が密に配線されている部分11にお
いては樹脂膜3の表面21が平坦化されるが、導体膜2
が粗に配線されている部分12においては樹脂膜3の表
面22は導体膜2の段差を緩和するが、完全には平坦化
されず、凹凸を残す結果となる。さらに、導体膜2の無
い部分に形成された樹脂膜3の表面23は平坦になるが
、導体膜2が密に配線されている部分11における樹脂
膜3の表面21に比べ基板からの高さが低くなっている
。この樹脂膜3上に第2の導体膜4を形成すると、樹脂
により第1の導体膜2の段差が緩和されるため段切れ等
の問題が発生しにくくなる。しかし一方では、導体膜4
が形成されている樹脂表面の高さが導体膜2の有無で異
なるため、第2の導体膜4の上に塗布したホトレジスト
パターンを形成するときの焦点位置の差が発生し、導体
膜4のパターンをすべての位置において良好に形成する
ことは困難となる。
Flattening occurs because the resin flows during heat curing after coating. A second conductor film 4 is formed on this resin film 3 to create a two-layer wiring. Since the step difference is alleviated by the resin, step breakage and the like are less likely to occur, allowing for good wiring. However, in the portion 11 where the conductor film 2 is densely wired, the surface 21 of the resin film 3 is flattened, but the conductor film 2
Although the surface 22 of the resin film 3 alleviates the level difference in the conductor film 2 in the portion 12 where the conductor film 2 is roughly wired, it is not completely flattened, resulting in unevenness. Furthermore, although the surface 23 of the resin film 3 formed in the area where there is no conductor film 2 is flat, it has a higher height from the substrate than the surface 21 of the resin film 3 in the area 11 where the conductor film 2 is densely wired. is low. When the second conductor film 4 is formed on the resin film 3, the step difference in the first conductor film 2 is alleviated by the resin, so that problems such as step breakage are less likely to occur. However, on the other hand, the conductor film 4
Since the height of the resin surface on which is formed differs depending on the presence or absence of the conductor film 2, a difference in focal position occurs when forming the photoresist pattern applied on the second conductor film 4, and the height of the resin surface on which the conductor film 4 is formed differs. It becomes difficult to form a pattern well at all positions.

また、凹凸のある表面32においてはホトレジスト露光
時に表面反射によりパターン不良を起こす。
Further, the uneven surface 32 causes pattern defects due to surface reflection during photoresist exposure.

更にはホトレジスト厚さに凹凸に伴う差が発生し、パタ
ーン寸法のずれを生ずる。
Furthermore, differences in photoresist thickness occur due to unevenness, resulting in deviations in pattern dimensions.

以上の問題を根本的に解決するには表面の凹凸を実質的
に零にする必要がある。具体的には、縮小投影露光機の
焦点深度約1μmに対し、十分に小さな凹凸にするのが
望ましい、この手段として、特開昭62−88117号
公報に示されるように。
In order to fundamentally solve the above problems, it is necessary to substantially eliminate surface irregularities. Specifically, it is desirable to make the unevenness sufficiently small for the depth of focus of the reduction projection exposure machine of about 1 μm, and a method for this purpose is disclosed in Japanese Patent Laid-Open No. 62-88117.

樹脂膜を熱処理する際に上部より平坦な板で圧力を加え
、強制的に流動させる方法がある。この方法によれば、
下地となる導体配線の粗密にかかわらず、平坦な表面が
得られる。
When heat treating a resin film, there is a method of applying pressure with a flat plate from above to force the resin film to flow. According to this method,
A flat surface can be obtained regardless of the density of the underlying conductor wiring.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上記従来技術は、樹脂を加熱処理する時に発生するガス
についての配慮がされておらず、気泡欠陥が局部的に発
生するという問題があった。
The above-mentioned conventional technology does not take into consideration the gas generated when heat-treating the resin, and there is a problem in that bubble defects occur locally.

本発明の目的は気泡欠陥を無くし、安定して平坦な樹脂
膜を得ることにある。
An object of the present invention is to eliminate bubble defects and obtain a stable and flat resin film.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的は、樹脂を加熱する際に上から力を加える板を
多孔質化することにより達成される。
The above object is achieved by making the plate to which force is applied from above when heating the resin porous.

〔作用〕[Effect]

多孔質の板は樹脂層から発生する溶媒蒸気、反応生成ガ
ス、含有水分の蒸気を透過することが可能となるため、
板と樹脂の間に気体が滞留することがなく、気泡の発生
を防ぐことができる。
The porous plate allows solvent vapor generated from the resin layer, reaction product gas, and moisture vapor to pass through,
Gas does not remain between the plate and the resin, and the generation of air bubbles can be prevented.

〔実施例〕〔Example〕

以下、本発明の一実施例を第1図により説明する。第1
図において、基板1は平坦なステージ41上に載せられ
ている。基板1上には予め導体膜2のパターンが形成さ
れている。該基板1に樹脂膜を形成するためのワニス4
2を塗布する。ワニスには、ポリイミド樹脂前駆体を有
機溶媒に溶解したもの、フェノール樹脂、熱軟化性を有
するフッ素系樹脂等通常絶縁等に使われている種々の有
機樹脂が用いられる。使用する樹脂は、樹脂自身が熱軟
化性を有するか、あるいは、フェノール樹脂のように熱
硬化性であるが一度軟化する性質を有するか、ある種の
溶媒に溶かすことが可能であることが必要である。樹脂
ワニス42を塗布した後、上部よりピストン43で力を
加える。樹脂自身に熱軟化性を有する時は一度溶媒を揮
発させ、硬化させても構わない。ピストンのワニス42
と接する表面には多孔質物質44が取付けられている。
An embodiment of the present invention will be described below with reference to FIG. 1st
In the figure, the substrate 1 is placed on a flat stage 41. A pattern of a conductor film 2 is formed on the substrate 1 in advance. Varnish 4 for forming a resin film on the substrate 1
Apply 2. The varnish may be made of various organic resins commonly used for insulation, such as a polyimide resin precursor dissolved in an organic solvent, a phenol resin, or a fluororesin having heat-softening properties. The resin used must either have thermosetting properties itself, or be thermosetting like phenolic resins but have the property of softening once, or be able to be dissolved in a certain type of solvent. It is. After applying the resin varnish 42, force is applied from above with a piston 43. When the resin itself has heat softening properties, the solvent may be evaporated once and the resin may be cured. Piston varnish 42
A porous material 44 is attached to the surface in contact with.

多孔質物質44はワニス42と接着しないことが必要で
あり、フッ素系樹脂などが選ばれる。
It is necessary that the porous material 44 does not adhere to the varnish 42, and a fluororesin or the like is selected.

ワニス42がフッ素系樹脂の場合は多孔質金属等を選ぶ
と良い。また、ピストン43の表面に多孔質膜をはさむ
ことにより多孔質物質44の役割をさせることも可能で
ある。
If the varnish 42 is made of fluororesin, porous metal or the like is preferably selected. Furthermore, by sandwiching a porous membrane on the surface of the piston 43, it is also possible to make it function as the porous substance 44.

ピストン43で基板1に力を加えた後、ヒータ45によ
り加熱する。ワニス42は溶媒が揮散し体積収縮を起こ
すが、ピストン43の力により流動を起し、表面は常に
平坦性が保たれる。最終的に溶媒の揮散が終了した段階
で表面が平坦な樹脂膜が形成される。揮発した溶媒は多
孔質物質44を通り、系外に排出される。そのため、ピ
ストン43とワニス42の間に気泡が発生して欠陥とな
ることが無い。
After applying force to the substrate 1 with the piston 43, it is heated by the heater 45. The varnish 42 undergoes volumetric contraction as the solvent evaporates, but the force of the piston 43 causes it to flow, and the surface remains flat at all times. Finally, when the solvent has finished volatilizing, a resin film with a flat surface is formed. The volatilized solvent passes through the porous material 44 and is discharged to the outside of the system. Therefore, air bubbles do not occur between the piston 43 and the varnish 42 and cause defects.

多孔質物質の孔径は溶媒分子が通過できる大きさであれ
ば小さい程良いが、ワニスの表面張力により孔の中にワ
ニスが侵入しないことが必要である。
The smaller the pore diameter of the porous material is, the better, as long as it is large enough to allow solvent molecules to pass through, but it is necessary that the varnish does not penetrate into the pores due to the surface tension of the varnish.

既に溶媒を取除いた熱軟化性物質の膜を加熱して平坦化
する場合は、加熱中に出て来る吸着水分。
When heating a film of a heat-softening material from which the solvent has already been removed to flatten it, adsorbed water will come out during heating.

残留溶媒1反応あるいは分解して出るガス等を多孔質物
質44を通して排出する。
Gas and the like produced by the reaction or decomposition of the residual solvent 1 are discharged through the porous material 44.

溶媒の排出を促進する、あるいは酸化等の反応を抑制す
るため、系全体を真空容器等に入れ、真空あるいは特定
の雰囲気中で加熱することも効果がある。また、加熱用
ヒータ45はステージ41゜ピストン43内に内蔵する
ことにより均一に加熱することも効果がある。
In order to accelerate the discharge of the solvent or suppress reactions such as oxidation, it is also effective to place the entire system in a vacuum container or the like and heat it in a vacuum or in a specific atmosphere. Further, it is also effective to provide uniform heating by incorporating the heating heater 45 inside the stage 41° piston 43.

〔発明の効果〕〔Effect of the invention〕

本発明によれば樹脂加熱中に出るガスをすみやかに系外
に排出できるので欠陥の無い平坦な膜が形成できる効果
がある。
According to the present invention, gas emitted during resin heating can be promptly discharged from the system, so that a flat film without defects can be formed.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の構成断面図、第2図は本発
明を説明するための断面図である。 1・・・基板、2,4・・・導体膜、3・・樹脂膜、4
1・・ステージ、42・・・ワニス、43・・ピストン
、44・・・多孔質物質、45・・・ヒータ。 4f ステージ 42 ワニス ヒータ
FIG. 1 is a cross-sectional view of an embodiment of the present invention, and FIG. 2 is a cross-sectional view for explaining the present invention. 1... Substrate, 2, 4... Conductor film, 3... Resin film, 4
1... Stage, 42... Varnish, 43... Piston, 44... Porous material, 45... Heater. 4f Stage 42 Varnish heater

Claims (1)

【特許請求の範囲】[Claims] 1、表面の少なくとも一部に非平面状部が形成された基
板の、前記非平面状部を含む少なくとも一部に絶縁膜を
形成する工程において、前記絶縁膜に対し、少なくとも
一部に気体を通す部分をもつ固体により圧力を加えるこ
とにより前記絶縁膜の表面形状を実質的に平面状にする
事を特徴とする絶縁膜の形成方法。
1. In the step of forming an insulating film on at least a part of the substrate including the non-planar part, the substrate has a non-planar part formed on at least a part of the surface, in which gas is applied to at least a part of the insulating film. A method for forming an insulating film, characterized in that the surface shape of the insulating film is made substantially planar by applying pressure with a solid having a passing portion.
JP15027788A 1988-06-20 1988-06-20 Formation of insulating film Pending JPH023230A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15027788A JPH023230A (en) 1988-06-20 1988-06-20 Formation of insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15027788A JPH023230A (en) 1988-06-20 1988-06-20 Formation of insulating film

Publications (1)

Publication Number Publication Date
JPH023230A true JPH023230A (en) 1990-01-08

Family

ID=15493449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15027788A Pending JPH023230A (en) 1988-06-20 1988-06-20 Formation of insulating film

Country Status (1)

Country Link
JP (1) JPH023230A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7473019B2 (en) 2005-09-29 2009-01-06 Osram Opto Semiconductors Gmbh Lighting apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7473019B2 (en) 2005-09-29 2009-01-06 Osram Opto Semiconductors Gmbh Lighting apparatus

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