JPH0226181B2 - - Google Patents
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- Publication number
- JPH0226181B2 JPH0226181B2 JP94485A JP94485A JPH0226181B2 JP H0226181 B2 JPH0226181 B2 JP H0226181B2 JP 94485 A JP94485 A JP 94485A JP 94485 A JP94485 A JP 94485A JP H0226181 B2 JPH0226181 B2 JP H0226181B2
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- Prior art keywords
- gaseous
- light
- spectral lines
- absorption
- incident
- Prior art date
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- Expired
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- 230000003595 spectral effect Effects 0.000 claims description 15
- 238000010521 absorption reaction Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000011002 quantification Methods 0.000 description 10
- 238000001514 detection method Methods 0.000 description 8
- 238000002835 absorbance Methods 0.000 description 7
- 238000000862 absorption spectrum Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000011896 sensitive detection Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 240000006829 Ficus sundaica Species 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/33—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/314—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry with comparison of measurements at specific and non-specific wavelengths
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
- G01N21/74—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using flameless atomising, e.g. graphite furnaces
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は新規なSの定量方法及び該方法を利用
したその場での高感度な検知定量が可能なSモニ
ターに関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a novel method for quantifying S and an S monitor capable of highly sensitive detection and quantification on the spot using the method.
本発明はSを用いる半導体製造品及び製造装
置、廃棄物処理装置等、例えばZnS、CdS、
ZnSxSe1-x等の化合物半導体のエピ成長装置
(CVD炉、LPE炉等)、高圧HB炉、アニーリング
炉、S圧アニーリング炉、MBE装置、MOCVD
装置等にS検出定量高感度モニターとして利用し
たり、あるいは、Sを含有する合金やセラミツク
ス、ガラス等の溶解炉等に利用することができ
る。 The present invention relates to semiconductor manufacturing products, manufacturing equipment, waste processing equipment, etc. that use S, such as ZnS, CdS,
Epi-growth equipment for compound semiconductors such as ZnSxSe 1-x (CVD furnace, LPE furnace, etc.), high-pressure HB furnace, annealing furnace, S-pressure annealing furnace, MBE equipment, MOCVD
It can be used as a high-sensitivity monitor for detecting and quantifying S in equipment, or can be used in melting furnaces for S-containing alloys, ceramics, glasses, etc.
(従来の技術)
従来、Sを検出する場合に、非破壊で、系を乱
さず、その場でガス状Sを検知定量する方法は殆
んど知られておらず、Sの検出は破壊検知が主で
ある。ガス状物質の非破壊検出・定量法として
は、ガスクロマトグラフイーが考えられるが、
測定系内に試料を導くまでに、導入管壁に付着
し、正確な定量ができない、系内からのサンプ
リングを要するため系を乱してしまう、という本
質的な問題点があるため不適であり、実用されて
いない。また、原子吸光分析は、原子状態の試料
について厳密に測定できるが、試料を2000℃以上
の高温状態とする必要があり、原子化温度以下の
検知定量は原理的に不可能であるに加え、用いう
るホロカソードランプがない。(Prior art) Conventionally, when detecting S, there is almost no known method for detecting and quantifying gaseous S on the spot in a non-destructive manner without disturbing the system. is the main thing. Gas chromatography can be considered as a non-destructive detection/quantification method for gaseous substances.
It is unsuitable because it has the inherent problem that it adheres to the wall of the introduction tube before the sample is introduced into the measurement system, making accurate quantitation impossible, and that it disturbs the system because it requires sampling from within the system. , has not been put into practice. In addition, atomic absorption spectrometry can accurately measure samples in the atomic state, but it requires the sample to be heated to a high temperature of 2000°C or higher, and detection and quantification below the atomization temperature is theoretically impossible. There are no hollow cathode lamps available.
(発明が解決しようとする問題点)
本発明は上記した現状に鑑みてなされたもの
で、非破壊で、系をみださず、その場でガス状S
の高感度検知・定量が可能な方法及び該方法を利
用した高感度モニターの提供を目的とするもので
ある。(Problems to be Solved by the Invention) The present invention has been made in view of the above-mentioned current situation.
The purpose of the present invention is to provide a method capable of detecting and quantifying with high sensitivity, and a highly sensitive monitor using the method.
(問題点を解決しようとする手段)
すなわち、本発明はガス状Sに、波長263nm
265.5nm268nm、270.5nm、273nm、276nm、
279nm及び282nmのスペクトル線のうちの2つ
またはそれ以上(たゞし263nmと265.5nmとの組
合せは除く)を、入射し、上記ガス状Sによる上
記入射スペクトル線の吸収を測定し、各光強度の
ピーク高さからSの検知・定量を行う方法および
炉またはヒータ付容器の光の進行方向に窓部を設
け、一方の窓部に263nm265.5nm268nm、270.5n
m、273nm、276nm、279nm及び282nmのスペ
クトル線のうちの2つまたはそれ以上(たゞし
263nmと265.5nmとの組合せは除く)の発光部、
他方の窓にはヒータ付容器内のガスSを通過した
前記スペクトル線の光強度のピーク高さからSを
検知定量する受光、測光部を接続してなる、Sモ
ニターである。(Means for solving the problem) That is, the present invention provides gaseous S with a wavelength of 263 nm.
265.5nm268nm, 270.5nm, 273nm, 276nm,
Two or more of the 279 nm and 282 nm spectral lines (excluding the combination of 263 nm and 265.5 nm) are incident, and the absorption of the incident spectral lines by the gaseous S is measured, and each light beam is A method for detecting and quantifying S from the intensity peak height, and a window is provided in the direction of light propagation in a furnace or a container with a heater, and one window has wavelengths of 263nm, 265.5nm, 268nm, and 270.5n.
Two or more of the following spectral lines: m, 273 nm, 276 nm, 279 nm and 282 nm
(excluding the combination of 263nm and 265.5nm),
The other window is an S monitor connected to a light-receiving/photometering section that detects and quantifies S from the peak height of the light intensity of the spectral line that has passed through the gas S in the heater-equipped container.
以下に本発明につき詳細に説明する。 The present invention will be explained in detail below.
本発明者らは、ガス状S(ガス状ではS2、S4、
S6、S8等になると考えられているが、特定されて
いない。)の吸光スペクトルを詳細に研究の結果、
第1図に示すように、波長263nm、265.5nm、
268nm、270.5nm、273nm、279nm及び282nm
に吸光のピークを有することを発見した。そして
このようなピークは温度300℃程度においてSの
分子の状況のスペクトルで得られるいう知見をも
得て、ガス状Sの吸収による上記の各々の吸光ピ
ークを利用することにより、ガス状Sを高感度で
かつその場でさえ検出・定量を可能としたもので
ある。 The present inventors have discovered that gaseous S (in gaseous form S 2 , S 4 ,
It is thought that it will be S 6 , S 8, etc., but it has not been identified. ) As a result of detailed research on the absorption spectra of
As shown in Figure 1, the wavelengths are 263nm, 265.5nm,
268nm, 270.5nm, 273nm, 279nm and 282nm
It was discovered that there is an absorption peak at . We also obtained the knowledge that such peaks can be obtained in the spectrum of the state of S molecules at a temperature of about 300°C, and by using each of the above absorption peaks due to absorption of gaseous S, gaseous S It is highly sensitive and enables detection and quantification even on the spot.
すなわち、本発明においては、上記波長のスペ
クトル線のうちの2つまたはそれ以上(たゞし
263nmと265.5nmとの組合せは除く)のスペクト
ル線を用いこれらを同時に入射し、発光部におけ
る分光器により別々に測定してその平均をとるの
で単一のスペクトル線を用いる場合により他物質
との分離がより確実となり、しかもS定量の精度
が向上する。 That is, in the present invention, two or more of the spectral lines of the above wavelengths
(excluding the combination of 263nm and 265.5nm), these are incident at the same time, measured separately with a spectrometer in the light emitting part, and then averaged. Separation becomes more reliable, and the accuracy of S quantification improves.
本発明は第2図に示すように、炉、ヒータ付セ
ルあるいは筒部1に窓2を取り付け、発光部3に
おいて263nm、265.5nm、268nm、270.5nm、
273nm、276nm、279nm及び282nmのスペクト
ル線のうちの2つまたはそれ以上(たゞし263n
mと265.5nmとの組合せは除く)を発光させ、こ
の光を窓2から入射し、受光部4において光強度
のピーク高さを測定することにより、炉またはセ
ル中のSを検知定量するものである。このSの検
知・定量は、上記の各ピーク吸収がS濃度に比例
することから求める。ピーク吸収とS濃度の関係
は
D=log1/T(%) ………(1)
D∝C ………(2)
上記(1)、(2)式で表される。ここでTはピークで
の吸光度(%)、CはSの濃度である。 As shown in FIG. 2, in the present invention, a window 2 is attached to a furnace, a cell with a heater, or a cylindrical part 1, and a light emitting part 3 emits 263 nm, 265.5 nm, 268 nm, 270.5 nm,
Two or more of the spectral lines 273nm, 276nm, 279nm and 282nm (only 263nm)
A device that detects and quantifies S in a furnace or cell by emitting light (excluding the combination of m and 265.5 nm), entering this light through window 2, and measuring the peak height of light intensity at light receiving section 4. It is. The detection and quantification of S is determined from the fact that each peak absorption described above is proportional to the S concentration. The relationship between peak absorption and S concentration is expressed by the following formulas (1) and (2): D=log1/T (%) (1) D∝C (2) Here, T is the absorbance at the peak (%), and C is the concentration of S.
上記の各スペクトル線発光源としては、ホロカ
ソードランプを用い、各スペクトル線の波長を中
心したフイルターを各々設けたものが使用でき
る。また該フイルターは受光部に設けることもで
きる。 As each of the above-mentioned spectral line emission sources, a hollow cathode lamp provided with a filter centered on the wavelength of each spectral line can be used. Further, the filter can also be provided in the light receiving section.
さらに検出結果をコンピユータ処理し、その結
果を表示するようにできる。このようにすれば、
ほぼ実時間でSを定量検出できるので、その場で
のSの検知定量とSの投入量S圧コントロール等
を制御しうる高感度Sモニターを実現できる。 Furthermore, the detection results can be processed by a computer and the results can be displayed. If you do this,
Since it is possible to quantitatively detect S in almost real time, it is possible to realize a highly sensitive S monitor that can detect and quantify S on the spot and control the amount of S input, S pressure, etc.
(実施例)
第3図aは本発明の実施例で用いた装置の概略
図であつて、1はセル、2は窓、3は発光部、4
は受光部、5は加熱手段をあらわす。なお第3図
bはこの装置の温度分布を示すグラフである。(Example) FIG. 3a is a schematic diagram of an apparatus used in an example of the present invention, in which 1 is a cell, 2 is a window, 3 is a light emitting part, and 4 is a schematic diagram of a device used in an example of the present invention.
5 represents a light receiving section, and 5 represents a heating means. Note that FIG. 3b is a graph showing the temperature distribution of this device.
セル1内にSを置き加熱手段5によりセル1内
の温度を298℃に一定にして保持したときのスペ
クトルを第4図に示す。263nm、265.5nm、268n
m、270.5nm、273nm、279nm及び282nmを最大
のピークとした吸収スペクトルが明瞭に測定され
た。 FIG. 4 shows the spectrum obtained when S was placed in the cell 1 and the temperature inside the cell 1 was kept constant at 298° C. by the heating means 5. 263nm, 265.5nm, 268n
An absorption spectrum with maximum peaks at m, 270.5 nm, 273 nm, 279 nm and 282 nm was clearly measured.
一方、Sの投入量と、吸光度の間には、一般的
に第5図に示す関係があることを詳細な実験に確
認した。ここでガス状Sが存在するとき検知され
る光強度をI、ガス状Sがないときの光強度をIo
とすると、吸光度T(%)は次式(3)で与えられる。 On the other hand, it was confirmed through detailed experiments that there is generally a relationship shown in FIG. 5 between the amount of S added and the absorbance. Here, the light intensity detected when gaseous S exists is I, and the light intensity when gaseous S is absent is Io.
Then, the absorbance T (%) is given by the following equation (3).
T=I/Io×100 ………(3)
したがつて、前記の(1)および(2)式により吸光度
からSを定量できる。なおA点は、温度tにおけ
る飽和点をあらわしており、
蒸気圧(log Pt(mmHg)−6750/t+11.32)によ
り規定される。 T=I/Io×100 (3) Therefore, S can be quantified from the absorbance using equations (1) and (2) above. Note that point A represents the saturation point at temperature t, and is defined by vapor pressure (log Pt (mmHg) - 6750/t + 11.32).
第5図の関係は263nm、265.5nm、268nm、
270.5nm、273nm、279nm及び282nmの夫々の吸
収スペクトルについて成立するので、いずれの組
合せのピークの測定によつてもS量を求めること
ができ、0.05ppmオーダーまで検出が可能となつ
た。検出は0.05ppmオーダーまで可能である。 The relationship in Figure 5 is 263nm, 265.5nm, 268nm,
Since this holds true for the absorption spectra of 270.5 nm, 273 nm, 279 nm, and 282 nm, the amount of S can be determined by measuring any combination of peaks, making it possible to detect down to the order of 0.05 ppm. Detection is possible down to the order of 0.05ppm.
さらに上記の8種の各スペクトル線を同時に検
知し、各々のピーク高さから同時に定量を行うこ
とができる。この場合は前記(1)、(3)式にかえて、
下記(a)〜(c)の評価手段による。なお、は夫々
の平均値を、n=1、2…8は上記8種類のピー
クについての、夫々の測定を表す。 Furthermore, each of the eight types of spectral lines mentioned above can be detected simultaneously, and quantification can be performed simultaneously from the height of each peak. In this case, instead of formulas (1) and (3) above,
Based on the following evaluation methods (a) to (c). In addition, n=1, 2...8 represents each measurement about the said eight types of peak, and n=1, 2...8 represents each average value.
このような評価はコンピユータ等演算装置によ
れば容易かつ迅速であり、実時間でS量を表示で
きるので、系の制御ができる。 Such evaluation is easy and quick using an arithmetic device such as a computer, and since the amount of S can be displayed in real time, the system can be controlled.
(発明の効果) 本発明の効果は次のとおりである。(Effect of the invention) The effects of the present invention are as follows.
(1) ガス状Sの吸収による波長263nm、265.5n
m、268nm、270.5nm、273nm、276nm、
279nm及び282nmのスペクトルを利用するこ
とにより、ガス状Sの高感度の検知・定量がそ
の場で可能となつた。(1) Wavelength 263nm, 265.5n due to absorption of gaseous S
m, 268nm, 270.5nm, 273nm, 276nm,
By using the 279nm and 282nm spectra, highly sensitive detection and quantification of gaseous S has become possible on the spot.
(2) 上記の波長の異なる2つあるいはそれ以上の
スペクトル線を同時に入射し、それらのピーク
高さから別々に定量して平均するため、Sの定
量精度が向上し、又検知に用いれば他の物質と
の分離が明瞭にできる。(2) Since two or more spectral lines with different wavelengths mentioned above are simultaneously incident, and their peak heights are quantified separately and averaged, the accuracy of S quantification is improved, and if used for detection, other can be clearly separated from other substances.
(3) 本発明の高感度SモニターはS量のその場検
知・定量が可能であり、さらにコンピユーター
等演算装置と組合すことにより、各スペクトル
の吸光度から実時間でS量を検知定量し、該演
算装置の出力信号によりS投入量、S圧等をそ
の場で制御することができる。(3) The high-sensitivity S monitor of the present invention is capable of on-the-spot detection and quantification of the amount of S, and when combined with a computing device such as a computer, the amount of S can be detected and quantified in real time from the absorbance of each spectrum. The S input amount, S pressure, etc. can be controlled on the spot based on the output signal of the arithmetic unit.
第1図はガス状Sの吸光スペクトルである。第
2図は本発明方法及びモニターの概略を示す模式
図である。第3図aは本発明の実施例で用いた装
置の概略図であり、第3図bは第3図a装置にお
ける温度分布を示すグラフである。第4図は本発
明の実施例で得られた波長と吸光度の関係を示す
グラフ、第5図はS量と吸光度の関係を示すグラ
フである。
FIG. 1 shows the absorption spectrum of gaseous S. FIG. 2 is a schematic diagram showing the outline of the method and monitor of the present invention. FIG. 3a is a schematic diagram of the apparatus used in the embodiment of the present invention, and FIG. 3b is a graph showing the temperature distribution in the apparatus of FIG. 3a. FIG. 4 is a graph showing the relationship between wavelength and absorbance obtained in an example of the present invention, and FIG. 5 is a graph showing the relationship between S amount and absorbance.
Claims (1)
m、270.5nm、273nm、276nm、279nm及び
282nmのスペクトル線のうちの2つまたはそれ
以上(たゞし263nmと265.5nmとの組合せを除
く)を、入射し、上記ガス状Sによる上記入射ス
ペクトル線の吸収を測定し、前記スペクトル線の
光強度のピーク高さからSの検知・定量を行う方
法。 2 炉またはヒータ付容器の光の進行方向に窓部
を設け、一方の窓部に波長263nm、265.5nm、
268nm、270.5nm、273nm、276nm、279nm及
び282nmのスペクトル線のうちの2つまたはそ
れ以上(たゞし263nmと265.5nmとの組合せを除
く)の発光部、他方の窓にはヒータ付容器内のガ
ス状Sを通過した前記スペクトル線の光強度のピ
ーク高さからSを検知定量する受光、測光部を接
続してなる、Sモニター。 3 光強度のピーク高さからSを検知・定量し、
それによりS投入量コントロール・S圧コントロ
ールを実時間で制御する特許請求の範囲第2項記
載のSモニター。 4 発光部がホロカソードランプからなる特許請
求の範囲第2項記載のSモニター。 5 発光部または受光部が263nm、265.5nm、
268nm、270.5nm、273nm、276nm、279nm及
び282nmのうちの2つまたはそれ以上(ただし
263nmと265.5nmとの組合せを除く)を中心とす
るフイルタを有する特許請求の範囲第2項記載の
Sモニター。[Claims] 1 Gaseous S has wavelengths of 263 nm, 265.5 nm, and 268 nm.
m, 270.5nm, 273nm, 276nm, 279nm and
Two or more of the 282 nm spectral lines (excluding the combination of 263 nm and 265.5 nm) are incident, the absorption of the incident spectral lines by the gaseous S is measured, and the absorption of the incident spectral lines by the gaseous S is measured. A method for detecting and quantifying S based on the peak height of light intensity. 2 A window is provided in the direction of light propagation of the furnace or container with a heater, and one window has wavelengths of 263 nm, 265.5 nm,
A light-emitting part for two or more of the spectral lines 268nm, 270.5nm, 273nm, 276nm, 279nm and 282nm (excluding only the combination of 263nm and 265.5nm); An S monitor is connected to a light receiving and photometering section for detecting and quantifying S from the peak height of the light intensity of the spectral line that has passed through the gaseous S. 3 Detect and quantify S from the peak height of light intensity,
The S monitor according to claim 2, which controls S input amount control and S pressure control in real time. 4. The S monitor according to claim 2, wherein the light emitting section comprises a hollow cathode lamp. 5 The light emitting part or the light receiving part is 263nm, 265.5nm,
Two or more of 268nm, 270.5nm, 273nm, 276nm, 279nm and 282nm (but
3. The S monitor according to claim 2, having a filter centered at 263 nm and 265.5 nm).
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP94485A JPS61160044A (en) | 1985-01-09 | 1985-01-09 | Detection and quantitative analysis of sulfur and sulfur monitor |
| US06/816,843 US4733084A (en) | 1985-01-09 | 1986-01-07 | Method of detection and quantitative determination of sulfur and sulfur monitor using the method |
| EP86100248A EP0187675B1 (en) | 1985-01-09 | 1986-01-09 | Method of detection and quantitative determination of sulfur and sulfur monitor using the method |
| DE8686100248T DE3682592D1 (en) | 1985-01-09 | 1986-01-09 | METHOD FOR DETECTING AND QUANTATIVE DETERMINATION OF SULFUR AND SULFUR MONITOR USING THIS METHOD. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP94485A JPS61160044A (en) | 1985-01-09 | 1985-01-09 | Detection and quantitative analysis of sulfur and sulfur monitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61160044A JPS61160044A (en) | 1986-07-19 |
| JPH0226181B2 true JPH0226181B2 (en) | 1990-06-07 |
Family
ID=11487782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP94485A Granted JPS61160044A (en) | 1985-01-09 | 1985-01-09 | Detection and quantitative analysis of sulfur and sulfur monitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61160044A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113295637B (en) * | 2021-05-19 | 2024-08-13 | 浙江工商大学 | Method for measuring content of elemental sulfur in water phase |
-
1985
- 1985-01-09 JP JP94485A patent/JPS61160044A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61160044A (en) | 1986-07-19 |
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