JPH02243918A - Displacement detector - Google Patents
Displacement detectorInfo
- Publication number
- JPH02243918A JPH02243918A JP6430289A JP6430289A JPH02243918A JP H02243918 A JPH02243918 A JP H02243918A JP 6430289 A JP6430289 A JP 6430289A JP 6430289 A JP6430289 A JP 6430289A JP H02243918 A JPH02243918 A JP H02243918A
- Authority
- JP
- Japan
- Prior art keywords
- reference scale
- displacement
- stage
- scale
- moves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006073 displacement reaction Methods 0.000 title claims abstract description 28
- 239000000523 sample Substances 0.000 claims abstract description 20
- 230000000737 periodic effect Effects 0.000 claims abstract description 6
- 230000007246 mechanism Effects 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 11
- 239000013078 crystal Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 229910020050 NbSe3 Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 241000219112 Cucumis Species 0.000 description 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000639 Spring steel Inorganic materials 0.000 description 1
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000009763 wire-cut EDM Methods 0.000 description 1
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の目的]
(産業上の利用分野)
本発明は変位測定装置に関し、特にトンネル電流によっ
て基準スケールのピッチを検出し、スケールの移動量を
数108以上にわたってΔ基準l定しえる変位検出装置
に孫わる。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to a displacement measuring device, and in particular, detects the pitch of a reference scale using a tunnel current, and measures the displacement of the scale over several 108 or more points based on the Δ reference. It is replaced by a displacement detection device that can be determined.
(従来の技術) 従来、変位検出器として以下のものが知られている。(Conventional technology) Conventionally, the following displacement detectors are known.
従来例1(第3回セレングフオーラ′ム(昭和61年4
718日・9日)、“半導体レーザを用いた超高分解能
ディジタルスケール°、 p、87)は、この発明と同
様、基準スケールを用いる方式の変位検出器である。こ
の方式では、基準スケールとしてG raLing (
回折格子)を用い、前記スケールにレーザ光を照射し、
その回折光の干渉信号を内挿して高分解能パルス(1n
m)を得ている。Conventional example 1 (3rd Selengforum (April 1986)
718 and 9), "Ultra-high resolution digital scale using semiconductor laser °, p, 87) is a displacement detector using a reference scale, similar to this invention. In this method, the GraLing (
irradiating the scale with a laser beam using a diffraction grating,
The interference signal of the diffracted light is interpolated to provide a high-resolution pulse (1n
m) has been obtained.
従来例2(特願昭62−209802号公報)は、本発
明と同様、トンネル電流を用いた平行移動量検出装置で
ある。ここで、基準スケールとしては、Sl、Go、水
晶などの単結晶を用いている。Conventional example 2 (Japanese Patent Application No. 62-209802) is a parallel movement amount detection device using tunnel current, similar to the present invention. Here, a single crystal such as Sl, Go, or quartz is used as the reference scale.
しかしながら、従来例1,2は以下に述べる問題点を有
する。However, Conventional Examples 1 and 2 have the following problems.
(従来例1)
この方式では基準スケールとして回折格子を用いている
が、回折格子の製造方式は現状ではりソグラフィによる
方式とルーリングエンジンによる機械加工方式の2方式
がある。原理的には、後者の方が狭いピッチのものが得
られる可能性がある。(Conventional Example 1) This method uses a diffraction grating as a reference scale, but there are currently two methods for manufacturing the diffraction grating: a method using lithography and a machining method using a ruling engine. In principle, the latter may yield a narrower pitch.
また、一般市販品では2000本/m+m、研究レベル
でも18000本/■(ピッチ−56m+n)で、今後
更に微細化の可能性がある。即ち、基準スケールにおい
て最も重要なパラメータはこのピッチ(P)であり、ス
ケールの高い精度化を図るためにはこのPを小さくする
必要が重要である。しかし、従来例2では回折の起きる
条件はslnθ−λ/P (第9図参照)であり、これ
が解をもつにはλ/P<1即ちλくPでなければならな
い。しかるに、実用的な波長としてはλ−250nm程
度が限界であるため、回折法ではP = 250na+
が基準スケールの限界であり、あとは内挿法によって高
分解能を得る手法にたよらざるを得ない。In addition, the average number of commercially available products is 2,000 lines/m+m, and even at the research level it is 18,000 lines/■ (pitch -56 m+n), and there is a possibility of further miniaturization in the future. That is, the most important parameter in the reference scale is the pitch (P), and it is important to reduce this P in order to achieve high accuracy of the scale. However, in Conventional Example 2, the condition for diffraction to occur is slnθ-λ/P (see FIG. 9), and for this to have a solution, λ/P<1, that is, λ<P. However, since the practical wavelength is limited to around λ-250nm, P = 250na+ in the diffraction method.
is the limit of the reference scale, and the rest has no choice but to rely on interpolation to obtain high resolution.
(従来例2の場合)
■基準スケールとして81等を用いた場合、Sl等の表
面は大気中で酸化が起り、トンネル電流を用いるには高
真空が必要になる。(Conventional example 2) ① When 81 etc. are used as a reference scale, oxidation occurs on the surface of Sl etc. in the atmosphere, and a high vacuum is required to use tunnel current.
■一般に結晶の表面原子はReRe−C0n5traC
1LIarlr1再構成)が起り、その原子配列が乱れ
易い。■Generally, the surface atoms of crystals are ReRe-C0n5traC
1LIarlr1 rearrangement) occurs, and the atomic arrangement is likely to be disordered.
■81などは2次元の規則性をもつため、本文中で記載
されているように探針が原子の頂上のみを操作すること
は事実9.l:不可能である。このため、移動比率演算
装置を設けるなど、斜めに操作した時のことを考慮する
必要がある。■81 etc. have two-dimensional regularity, so it is true that the probe manipulates only the top of the atom as described in the text.9. l: Impossible. For this reason, it is necessary to consider what will happen when the device is operated diagonally, such as by providing a movement ratio calculating device.
(発明が解決しようとする課題)
本発明は上記事情に鑑みてなされたもので、製品の寸法
を高精度に測定する場合のプローグ移動瓜や加工機械の
ステージの位置を高精度に測定する場合に、高分解能で
変位をΔPI定しえる小型で構造が簡易な変位検出装置
を提供することを目的とする。(Problems to be Solved by the Invention) The present invention has been made in view of the above circumstances, and is used to accurately measure the position of a prong moving melon or the stage of a processing machine when measuring the dimensions of a product with high accuracy. Another object of the present invention is to provide a displacement detection device which is small in size and has a simple structure, and which can determine displacement as ΔPI with high resolution.
[発明の構成]
(課題を解決するための手段)
本発明は、4電性を有する基準スケールと、この基準ス
ケールを一次元的に移動するステージと、前記基準スケ
ールに対し導電性を有する探針を近づける粗動機構と、
前記基準スケールに対し上記探針を微少量駆動する微動
機構と、前記基準スケールと探針181に流れるトンネ
ル電流を一定に保制御回路と、この制御回路の信号を計
数表示する回路とを具備し、基準スケールのもつ表面の
一方向に存在する周期的凹凸を計数して披Al11定物
の変位量を7iPI定する変位検出装置である。[Structure of the Invention] (Means for Solving the Problems) The present invention includes a reference scale having four conductivity, a stage that moves the reference scale one-dimensionally, and a probe having conductivity with respect to the reference scale. A coarse movement mechanism that brings the needle closer together,
It is equipped with a fine movement mechanism for driving the probe by a minute amount with respect to the reference scale, a control circuit for maintaining a constant tunnel current flowing through the reference scale and the probe 181, and a circuit for displaying the signals of the control circuit in a numerical manner. This is a displacement detection device that counts periodic irregularities existing in one direction on the surface of a reference scale and determines the amount of displacement of an Al11 constant by 7iPI.
本発明の第1のボイドはトネル電流を使用することであ
り、第2のポイントは基準スケールの構成にある。以下
、基僧スケールについて第1O図(A)(B)を参照し
て説明する。同図は、従来例2の図面より抜粋した図で
あり、同図(A)はNb5c3の単結晶の壁界面をST
Mで観察したアナログ図、同図(B)はNbSe3中の
Nb。The first void of the present invention is the use of tunnel current, and the second point is the configuration of the reference scale. The Kisō scale will be explained below with reference to FIGS. 1O (A) and (B). This figure is an excerpt from the drawing of Conventional Example 2, and the same figure (A) shows the wall interface of the Nb5c3 single crystal as ST.
An analog diagram observed with M, the same figure (B) shows Nb in NbSe3.
So原子の璧界面への平面図である。即ち、ニオブセレ
ンNb Se 3の単結晶の璧開面をSTMで観察する
と、原子のレベルの周期性のある信号が1りられる。こ
の周期即ちピッチは1.529±0.02mff1であ
り、この値又はこの1/2値を用いれば、1nIm以下
の分解能のあるパルスが得ることができる。FIG. 3 is a plan view of the interface of So atoms. That is, when observing the cracked surface of a single crystal of niobselenium Nb Se 3 using STM, a signal with periodicity at the atomic level is detected. This period, that is, the pitch is 1.529±0.02 mff1, and if this value or 1/2 of this value is used, a pulse with a resolution of 1 nIm or less can be obtained.
但し、このNbSe3結晶を基準スケールとして用いる
場合には、77K(ケルビン)の低温が必要で、このA
Pj定器自体は液体HOなどを用いた低温チャンバにで
動作させる必要がある。しかし、従来例2と異なり、1
次元の周期性をもつ単結晶を用いているので、探針が原
子列に直角に走らなくても意味のある周期信号を得るこ
とができる。However, when using this NbSe3 crystal as a reference scale, a low temperature of 77K (Kelvin) is required, and this A
The Pj meter itself must be operated in a low temperature chamber using liquid HO or the like. However, unlike conventional example 2, 1
Since a single crystal with dimensional periodicity is used, a meaningful periodic signal can be obtained even if the probe does not run perpendicular to the atomic array.
また、単結晶でなl’lΩc p1tcハの回折格子(
表面は金などをコーティングした導電性を有するもの)
を用いることもできる。この場合には、現状ではピッチ
GOnm程度のものが存在するが、今後数n11のもの
まで可能性がある。この時のスケール全長は数10ma
+から数10a+rAが可能であると思われる。In addition, a single crystal diffraction grating (l'lΩc p1tc) (
Conductive surface coated with gold, etc.)
You can also use In this case, at present there is a pitch of about GOnm, but in the future there is a possibility of a pitch of several n11. The total length of the scale at this time is several tens of ma.
It seems that several 10a+rA is possible from +.
なお、この場合も基準スケールは1次元の周期性を有し
ていることは自明である。Note that it is obvious that the reference scale has one-dimensional periodicity in this case as well.
(実施例)
以下、本発明の一実施例を第1図〜第6図を参照して説
明する。(Example) An example of the present invention will be described below with reference to FIGS. 1 to 6.
第1図は本実施例に係る変位検出装置の略斜視図である
。FIG. 1 is a schematic perspective view of a displacement detection device according to this embodiment.
図中の1は、例えば大きさが100mm (長さ)x
50+nm (幅) x 20m m (高さ)のア
ルミ製のハウジングである。このハウジング1の内側に
は、中空のステージ2が配置されている。このハウジン
グ2は、リン青銅やバネ鋼からなるの厚み0.05〜0
.2mm 72度の薄い板(板バネ)3を介して前記ハ
ウジング1と4ケ所で連結されている。ここで、各板バ
ネ3は平行になっている。前記ステージ2の片端には、
伸びの極めて小さいボロンファイバーやカーボンファイ
バーからなるワイヤ4が固定されている。このワイヤ4
は、前記ハウジング1の側壁に設けられた貫通穴1aか
ら外部に引出されている。このワイヤ4の他端は、披f
lllJ定物(図示せず)、即ち移動量を/1111定
しようとする寸法測定機や加工機械のステージに固定さ
れている。この固定により、変位がステージ2に伝達す
るように構成されている。前記ステージ2の上面には、
NbSe3結晶を壁間した基準スケール5が接着やネジ
止め等の手段により固定されている。1 in the figure is, for example, 100mm (length) x
The housing is made of aluminum and measures 50+nm (width) x 20mm (height). Inside this housing 1, a hollow stage 2 is arranged. This housing 2 is made of phosphor bronze or spring steel and has a thickness of 0.05 to 0.
.. It is connected to the housing 1 at four points via thin plates (plate springs) 3 of 2 mm and 72 degrees. Here, each leaf spring 3 is parallel. At one end of the stage 2,
A wire 4 made of boron fiber or carbon fiber with extremely low elongation is fixed. This wire 4
is drawn out from a through hole 1a provided in the side wall of the housing 1. The other end of this wire 4 is
It is fixed to a constant object (not shown), that is, to the stage of a dimension measuring machine or processing machine whose displacement is to be determined by /1111. This fixation is configured so that displacement is transmitted to the stage 2. On the top surface of the stage 2,
A reference scale 5 having NbSe3 crystals interposed between the walls is fixed by adhesives, screws, or the like.
前記ハウジング1には、第2図図示のアルミ製のL型ア
ーム6が取付けられている。このアーム6には、粗動用
のマイクロメータ(1目盛り1〜0.1μm)7が設け
である。このマイクロメートル7にはマイクロ移動部8
が取付けられており、マイクロメートル7を手動で回転
することによりマイクロ移動部8が一6Z方向に進む。An aluminum L-shaped arm 6 shown in FIG. 2 is attached to the housing 1. As shown in FIG. This arm 6 is provided with a micrometer 7 (one scale is 1 to 0.1 μm) for coarse movement. This micrometer 7 has a micro moving section 8.
is attached, and by manually rotating the micrometer 7, the micro-moving section 8 moves in the 16Z direction.
ここで、前記マイクロメートル7及びマイクロ移動部8
を総称して微動機構と呼ぶ。前記マイクロ移動部8の先
端には、例えば積層型で5μm/100 V (全印加
電圧)の変位特性をもつ(つまり、100■で最大5μ
m伸びるという意味である)圧電素子(微動機構)9が
設けられている。この圧電索子9の先端には、探針10
が取付けられている。この探針lOの固定方法は、例え
ば探針lOが入る穴のあいたアルミブロックが圧電索子
9の先端に接着されており、この穴に探針10を挿入し
、ネジにより固定する方式である。Here, the micrometer 7 and the micro moving part 8
These are collectively called the fine movement mechanism. The tip of the micro-movement section 8 is, for example, of a laminated type and has a displacement characteristic of 5 μm/100 V (total applied voltage) (that is, a maximum of 5 μm at 100 μm).
A piezoelectric element (fine movement mechanism) 9 is provided. At the tip of this piezoelectric cord 9, a probe 10 is attached.
is installed. This method of fixing the probe 10 is, for example, a method in which an aluminum block with a hole into which the probe 10 is inserted is glued to the tip of the piezoelectric cord 9, and the probe 10 is inserted into this hole and fixed with a screw. .
第4図は、こうした構造の変位検出装置の電気制御系を
示す回路図である。この制御系は、トンネル電流を得る
ためのバイアス電圧源21、トンネル電流を検出する電
流電圧変換回路22、対数増幅器23、差動増幅′52
4、積分器25、増幅器26、高圧増幅′S、27、エ
ッヂ検出器28、計数器29及び表示器30などにより
構成されている。FIG. 4 is a circuit diagram showing an electrical control system of a displacement detection device having such a structure. This control system includes a bias voltage source 21 for obtaining tunnel current, a current-voltage conversion circuit 22 for detecting tunnel current, a logarithmic amplifier 23, and a differential amplifier '52.
4, an integrator 25, an amplifier 26, a high voltage amplifier 'S, 27, an edge detector 28, a counter 29, a display 30, etc.
次に、上記構造の変位検出装置の作用について説明する
。Next, the operation of the displacement detection device having the above structure will be explained.
■まず、粗動マイクロ7を手動で調整し、探針lOを基
準スケール5にトンネル電流が検出できる程度まで近付
ける。なお、このトンネル電流については、走査型トン
ネル顕微鏡(STM)の原理で自明なので説明を省略す
る。ここで、前記探針10は、STMと同様、第4図の
制御回路によってフィードバックされ、基準スケール5
表面から数nrpの近傍に保たれる。(1) First, manually adjust the coarse movement micro 7 to bring the probe lO close to the reference scale 5 to the extent that a tunnel current can be detected. Note that this tunnel current is self-evident based on the principle of a scanning tunneling microscope (STM), so a description thereof will be omitted. Here, the probe 10 is fed back by the control circuit shown in FIG. 4, similar to the STM, and the reference scale 5
It is kept in the vicinity of several nrp from the surface.
■一方、披/IIIJ定物の移動部分には前記ワイヤ4
の他端が固定されており、前記移動部分が6(く10+
u+)移動すると、ワイヤ4を介してステージ2がX方
向に引かれる。その結果、ステージ2は板バネ3の特性
により、第3図に示す如く平行にX方向に移動する。な
お、本方式ではステージ2はy、z方向に移動しない(
上下動、左右動は極めて少ない)。また、いわゆるステ
ージ2のピッチング、ヨーイング、0−リングの成分は
極めて少なく数秒以下にできる。前記ステージ2が移動
すると、STMの原理と同様、第5図の信号Sのように
、2!準スケ一ル49表面の凹凸に対応した信号が得ら
れる(なお、この凹凸は原子レベルまでに達する)。■On the other hand, the wire 4 is attached to the moving part of the
The other end is fixed, and the movable part is 6 (ku10+
u+) When the stage 2 moves, the stage 2 is pulled in the X direction via the wire 4. As a result, the stage 2 moves in parallel in the X direction as shown in FIG. 3 due to the characteristics of the leaf spring 3. Note that in this method, stage 2 does not move in the y and z directions (
There is very little vertical or horizontal movement). Furthermore, the pitching, yawing, and 0-ring components of so-called stage 2 are extremely small and can be maintained for several seconds or less. When the stage 2 moves, similar to the principle of STM, as shown in the signal S in FIG. 5, 2! A signal corresponding to the irregularities on the surface of the quasi-scale 49 is obtained (the irregularities reach the atomic level).
■更に、この信号をエッヂ検出器2Bに入力し、第6図
のような正負のパルス(E)を得る。このパルスを計数
することにより、基準スケール4のピッチPの約1/2
の変位を計数器29によってカウントし、表示器30に
より表示することができる。(2) Furthermore, this signal is input to the edge detector 2B to obtain positive and negative pulses (E) as shown in FIG. By counting these pulses, approximately 1/2 of the pitch P of the reference scale 4 is calculated.
The displacement can be counted by a counter 29 and displayed by a display 30.
しかして、上記実施例に係る変位検出装置は、Nb5o
2結晶を壁間した基準スケール5、この基準スケール5
を平行に移動するステージ2と、前記基準スケール2に
対し探針10を近づける粗動機構と、前記基準スケール
5に対し上記探針lOを微少量駆動する微動機構と、前
記基準スケール5と探針10間に流れるトンネル電流を
一定に保つ制両回路と、この制御回路の信号を計数表示
する回路とを具備し、基■スケール5のもつ表面の一方
向に存在する周期的凹凸を計数して被測定物の低位量を
71pj定する構成となっている。従って、以下に列挙
する効果を有する。Therefore, the displacement detection device according to the above embodiment has Nb5o
A reference scale 5 with two crystals between the walls, this reference scale 5
a stage 2 that moves the probe 10 in parallel to the reference scale 2, a coarse movement mechanism that brings the probe 10 closer to the reference scale 2, a fine movement mechanism that moves the probe 10 by a minute amount with respect to the reference scale 5, and a stage 2 that moves the probe 10 in parallel with the reference scale 5; It is equipped with a control circuit that keeps the tunnel current flowing between the needles 10 constant and a circuit that counts and displays the signals of this control circuit, and counts periodic irregularities existing in one direction on the surface of the basic scale 5. The structure is such that the lower quantity of the object to be measured is determined by 71pj. Therefore, it has the effects listed below.
1)トンネル電流方式を用いているが、電流の瓜は極め
て微少(0,lV/nA)であるため、温度ドリフトを
回避できる(従来例2の光方式と比べ1O1J倍安定で
ある)。これに対し、従来の回折格子に光を当て周期信
号を電気分解する方式では、回折格子が光により暖まる
従って、回折格子が熱膨張し、十分な精度(測定の確度
)が十分得られない。1) Although a tunnel current method is used, the current flow is extremely small (0.1V/nA), so temperature drift can be avoided (101J times more stable than the optical method in Conventional Example 2). On the other hand, in the conventional method of applying light to a diffraction grating and electrolyzing a periodic signal, the diffraction grating is warmed by the light and thermally expands, making it impossible to obtain sufficient precision (accuracy of measurement).
2)NbSe3の単結晶の壁間面をSTMで観察すると
、原子のレベルの周期性のある信号が得られる。この周
期即ちピッチは1.529±0.02mmであり、この
値又はこの1/2値を用いれば、lnm以下の分解能の
あるパルスが得ることができる。2) When observing the interwall surface of a single crystal of NbSe3 using STM, a signal with periodicity at the atomic level is obtained. This period, that is, the pitch is 1.529±0.02 mm, and by using this value or 1/2 of this value, a pulse with a resolution of 1 nm or less can be obtained.
これに対し、従来の回折格子に光を当てる方式ではln
iの分解能は得ているものの、この分解能の確度は回折
格子の山の形状の周期性に依存している。従って、1n
+nの精度は現状では保証できない。In contrast, in the conventional method of shining light onto a diffraction grating, ln
Although a resolution of i is obtained, the accuracy of this resolution depends on the periodicity of the peak shape of the diffraction grating. Therefore, 1n
+n accuracy cannot be guaranteed at present.
即ち、
3)装置全体を手の平にのるサイズ程度に小さくできる
。これに対し、従来の回折格子に光を当てる方式の場合
、光学的距離が必要なため装置全体が大型化する。That is, 3) The entire device can be made small enough to fit in the palm of your hand. On the other hand, in the case of the conventional method of shining light onto a diffraction grating, the entire apparatus becomes large because an optical distance is required.
4)制御回路が極めて簡便である。これに対し、従来例
2の場合、ADコンバータ、CPUなど極めて曳雑な電
気回路が必要となる。4) The control circuit is extremely simple. On the other hand, in the case of Conventional Example 2, extremely complicated electric circuits such as an AD converter and a CPU are required.
なお、上記実施例では、ステージが被測定物とワイヤで
連結されている場合について述べたが、これに限定され
ない。例えば、連結棒や金属テープなど被測定物の変位
をステージ変位に伸縮なく伝達できるものであればなん
でもよい。In the above embodiments, a case has been described in which the stage is connected to the object to be measured by a wire, but the present invention is not limited to this. For example, any material such as a connecting rod or a metal tape may be used as long as it can transmit the displacement of the object to be measured to the displacement of the stage without expansion or contraction.
上記実施例では、ステージとハウジングを互いに平行な
板バネで連結した場合について述べたが、これに限定さ
れない。例えば、第7図や第8図に示す如くアルミ合金
ブロックからワイヤカット放電加工等により切り抜くタ
イプのものでもよく、また平行バネに限らず、基準スケ
ールを平行にX方向に移動できるメカニズムであればそ
の他の機構でも良い。In the above embodiment, a case has been described in which the stage and the housing are connected by mutually parallel leaf springs, but the present invention is not limited to this. For example, as shown in Figures 7 and 8, it may be of the type cut out from an aluminum alloy block by wire-cut electrical discharge machining or the like, and it is not limited to parallel springs, but any mechanism that can move the reference scale in parallel in the X direction. Other mechanisms may also be used.
上記実施例では、アームに粗動用のマイクロメータを設
けた場合について述べたが、これに限定されない。例え
ば、1〜0.1μmの精度で位置合せができる機構であ
ればどのような手段を用いてもよい。In the above embodiment, a case has been described in which the arm is provided with a micrometer for coarse movement, but the present invention is not limited to this. For example, any mechanism that can perform positioning with an accuracy of 1 to 0.1 μm may be used.
上記実施例では、電気制御系で対数増幅器を用0たが、
フィードバックが行えればこの対数増幅器はなくても良
い。また、同制御系では第5図の信号Sはエッヂ検出器
28によりパルスを発生させているが、エッヂを検出せ
ず、信号Sをそのまま+iE数する方式でも良い(但し
、DC成分の除去やシュミット回路は必要であり、また
この方式では分解能は光のそれの2倍となる)。In the above embodiment, a logarithmic amplifier was used in the electrical control system, but
If feedback can be performed, this logarithmic amplifier may be omitted. Furthermore, in the same control system, the edge detector 28 generates pulses for the signal S shown in FIG. A Schmitt circuit is required, and the resolution in this method is twice that of light).
[発明の効果]
以上詳述した如く本発明によれば、製品の寸法を高精度
に71111定する場合のプローグ移動量や加工機械の
ステージの位置を高精度に測定する場合に、高分解能で
低位を測定しえる小型で構造が簡易な変位検出装置を提
供できる=[Effects of the Invention] As detailed above, according to the present invention, it is possible to use high-resolution 71111 when measuring the prong movement amount when determining the dimensions of a product with high precision and the position of the stage of a processing machine with high precision. We can provide a displacement detection device that is small and has a simple structure that can measure low levels.
第1図は本発明の四実施例に係る変位検出装置の略斜視
図、第2図はこの装置に用いられるアームの斜視図、第
3図は第1図の装置の一構成要素であるステージの移動
状態を示す説明図、第4図は第1図の装置の電気制御系
を示す回路図、第5図は信号Sの波形図、第6図は信号
Eのパルス図、第7図及び第8図は夫々ステージの変形
例を示す斜視図、第9図は波長、入射角度及びピッチの
関係を示す説明図、第10図はNb Se 3の単結晶
の壁界面をSTMで観察した場合の説明図である。
1・・・ハウジング、2・・・ステージ、3・・・板バ
ネ、4・・・ワイヤ、5・・・基準スケール、6・・・
アーム、7・・・マイクロメートル、8・・・マイクロ
移動部、9・・・圧電素子、IO・・・探針。
出願人代理人 弁理士 鈴江武彦
アーム
第
図
第
図
第
図
第
図
第
図
第
図FIG. 1 is a schematic perspective view of a displacement detection device according to a fourth embodiment of the present invention, FIG. 2 is a perspective view of an arm used in this device, and FIG. 3 is a stage that is one component of the device shown in FIG. FIG. 4 is a circuit diagram showing the electrical control system of the device shown in FIG. 1, FIG. 5 is a waveform diagram of signal S, FIG. 6 is a pulse diagram of signal E, and FIGS. Figure 8 is a perspective view showing modified examples of the stages, Figure 9 is an explanatory diagram showing the relationship between wavelength, incident angle, and pitch, and Figure 10 is a case where the wall interface of a single crystal of Nb Se 3 is observed by STM. FIG. DESCRIPTION OF SYMBOLS 1... Housing, 2... Stage, 3... Leaf spring, 4... Wire, 5... Reference scale, 6...
Arm, 7... micrometer, 8... micro moving part, 9... piezoelectric element, IO... probe. Applicant's Representative Patent Attorney Takehiko Suzue Arm
Claims (1)
次元的に移動するステージと、前記基準スケールに対し
導電性を有する探針を近づける粗動機構と、前記基準ス
ケールに対し上記探針を微少量駆動する微動機構と、前
記基準スケールと探針間に流れるトンネル電流を一定に
保制御回路と、この制御回路の信号を計数表示する回路
とを具備し、基準スケールのもつ表面の一方向に存在す
る周期的凹凸を計数して被測定物の変位量を測定する変
位検出装置。A conductive reference scale, a stage that moves the reference scale one-dimensionally, a coarse movement mechanism that brings the conductive probe closer to the reference scale, and a minute movement mechanism that moves the probe closer to the reference scale. It is equipped with a fine movement mechanism for driving, a control circuit for keeping the tunnel current flowing between the reference scale and the probe constant, and a circuit for counting and displaying the signals of this control circuit, and is provided in one direction on the surface of the reference scale. A displacement detection device that measures the amount of displacement of an object by counting periodic irregularities.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6430289A JPH02243918A (en) | 1989-03-16 | 1989-03-16 | Displacement detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6430289A JPH02243918A (en) | 1989-03-16 | 1989-03-16 | Displacement detector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02243918A true JPH02243918A (en) | 1990-09-28 |
Family
ID=13254320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6430289A Pending JPH02243918A (en) | 1989-03-16 | 1989-03-16 | Displacement detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02243918A (en) |
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-
1989
- 1989-03-16 JP JP6430289A patent/JPH02243918A/en active Pending
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