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JPH02175895A - Method for plating nonconductor - Google Patents

Method for plating nonconductor

Info

Publication number
JPH02175895A
JPH02175895A JP63330683A JP33068388A JPH02175895A JP H02175895 A JPH02175895 A JP H02175895A JP 63330683 A JP63330683 A JP 63330683A JP 33068388 A JP33068388 A JP 33068388A JP H02175895 A JPH02175895 A JP H02175895A
Authority
JP
Japan
Prior art keywords
plating
nonconductor
copper
nickel
current density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63330683A
Other languages
Japanese (ja)
Other versions
JPH0633499B2 (en
Inventor
Fujio Matsui
冨士夫 松井
Takeshi Kawakubo
川窪 武志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Uemera Kogyo Co Ltd
C Uyemura and Co Ltd
Original Assignee
Uemera Kogyo Co Ltd
C Uyemura and Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uemera Kogyo Co Ltd, C Uyemura and Co Ltd filed Critical Uemera Kogyo Co Ltd
Priority to JP63330683A priority Critical patent/JPH0633499B2/en
Publication of JPH02175895A publication Critical patent/JPH02175895A/en
Publication of JPH0633499B2 publication Critical patent/JPH0633499B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10Electroplating with more than one layer of the same or of different metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

PURPOSE:To easily form a high-conductivity plating layer consisting essentially of Cu and a corrosion-resistant plating layer contg. Ni on a nonconductor in the same plating bath by activating the surface of the nonconductor, and then electroplating the nonconductor in a plating soln. contg. Cu ion, Ni ion, and a reducing agent while changing the current density. CONSTITUTION:When a conductive electromagnetic wave shielding layer is formed on a nonconductor of plastics, etc., by electroplating, the nonconductor is pretreated to clean the surface, and then a metallic Pd nucleus or a metallic Ag nucleus is deposited by the conventional method to activate the surface. The nonconductor is then dipped in the plating soln. contg. Cu ion, Ni ion, and the reducing agent for the ions, and firstly electroplated at the low current density of eta0.5A/dm<2> with a highly conductive Cu-Ni alloy contg. >80% Cu. The nonconductor is then plated in the same bath with a Cu-Ni alloy contg. >30% Ni and excellent in corrosion resistance at the current density of >=1A/dm<2>. An electromagnetic wave shielding layer is formed in a short time with such simple device and process.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は電磁波シールド層をプラスチック等の非導電体
に形成する場合などに好適に採用される非導電体へのめ
っき方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of plating a non-conductive material, which is suitably employed when forming an electromagnetic shielding layer on a non-conductive material such as plastic.

〔従来の技術〕[Conventional technology]

従来、プラスチック等の非導電体に電磁波シールド層と
して銅めっき層やニッケルめっき層を形成することが知
られている。この場合、銅めっき層、ニッケルめっき層
の形成は、プラスチック等の非導電体へのめっき方法の
常法に従がい、脱脂、エツチング等を適宜行なった後、
非導電体表面に金属パラジウム核や金属銀核を形成する
活性化処理を行ない、次いで無電解銅めっき、無電解ニ
ッケルめっきを施すという方法が採用されている。
Conventionally, it has been known to form a copper plating layer or a nickel plating layer on a non-conductive material such as plastic as an electromagnetic shielding layer. In this case, the formation of the copper plating layer and the nickel plating layer follows the usual method for plating non-conductive materials such as plastics, and after degreasing, etching, etc. as appropriate,
A method has been adopted in which activation treatment is performed to form metal palladium nuclei or metal silver nuclei on the surface of a nonconductor, and then electroless copper plating or electroless nickel plating is applied.

また、電磁波シールド層として、銅めっき層上に更にニ
ッケルめっき層を形成することも知られている(特許公
表62−500344号公報又は米国特許筒4,663
,240号公報)。これは、使用雰囲気中で銅めっき層
が酸化され、シールド効果が劣化するのをニッケルめっ
き層により防止するようにしたものであり、かかる銅−
ニッケルめっき層を形成する方法として、非導電体上に
金属粒子を分散させた有機バインダー層を形成し、その
上に無電解銅めっき層を形成し、更にその上に無電解ニ
ッケルめっき廖を形成する方法を採用している。
It is also known to further form a nickel plating layer on the copper plating layer as an electromagnetic shielding layer (Patent Publication No. 62-500344 or U.S. Pat. No. 4,663).
, No. 240). This is because the nickel plating layer prevents the copper plating layer from being oxidized in the usage atmosphere and deteriorating the shielding effect.
The method for forming a nickel plating layer is to form an organic binder layer with metal particles dispersed on a non-conductor, form an electroless copper plating layer on top of that, and then form an electroless nickel plating layer on top of that. The method is adopted.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

このように、従来は銅−ニッケルめっき層の二層からな
る電磁波シールド層を形成する場合、活性金属核を形成
した後、無電解銅めっき、無電解ニッケルめっきを施す
ことが行なわれているが、これらの工程は当然それぞれ
別個の槽で行なわれ、しかもこれら各工程間には水洗、
酸洗活性化、水洗等の工程が必要であり、工程が長くな
る。このため、特に被めっき物が大型のプラスチックで
あるような場合、搬送に細心な注意を要求され、にもか
かわらず品物の落下機会も増大する。また、銅めっき層
上に無電解ニッケルめっきを施す場合、銅は無電解ニッ
ケルめっき液に対し本質的に触媒活性でないので、無電
解ニッケルめっきが析出し難いという問題がある。この
場合、無電解ニッケルめっきのスタートを早めるため、
還元剤量を増やしたり、錯化剤量を減らすと、めっき液
が不安定化する。
Conventionally, when forming an electromagnetic shielding layer consisting of two copper-nickel plating layers, electroless copper plating and electroless nickel plating are performed after forming an active metal core. , these steps are naturally carried out in separate tanks, and between each step there is water washing,
Processes such as pickling activation and water washing are required, making the process long. For this reason, especially when the object to be plated is a large plastic, great care is required in transporting the object, and the chance of the object falling increases. Furthermore, when applying electroless nickel plating on a copper plating layer, there is a problem that electroless nickel plating is difficult to deposit because copper is essentially not catalytically active with respect to electroless nickel plating solution. In this case, in order to hasten the start of electroless nickel plating,
If the amount of reducing agent is increased or the amount of complexing agent is decreased, the plating solution becomes unstable.

本発明は上記事情を改善するためになされたもので、一
つのめっき浴中で銅を主体とする高電導層とニッケルを
30%(重量%、以下同じ)以上含有する耐食層との二
層を形成でき、工程が簡略化されると共に、めっき時間
も短縮することができる非導電体上へのめっき方法を提
供する。
The present invention was made to improve the above-mentioned situation, and consists of two layers: a highly conductive layer mainly made of copper and a corrosion-resistant layer containing 30% (wt%) or more of nickel (the same applies hereinafter) in one plating bath. To provide a method for plating on a non-conductor, which can simplify the process and shorten the plating time.

〔課題を解決するための手段及び作用〕本発明は上記目
的を達成するため、非導電体の表面に金属パラジウム核
又は金属銀核を付着させた後、該非導電体を銅塩とニッ
ケル塩とを含有しかつ還元剤を含有するめっき浴中に浸
漬しまず0.5A/drrr以下の低電流密度で電気め
っきを行なって銅を80%以上、特に85%以上含有す
る銅を主体とするめっき被膜を形成し、次いでLA/d
rrr以上の高電流密度で電気めっきを行なってニッケ
ルを30%以上含有するめっき被膜を形成するようにし
たものである。
[Means and effects for solving the problem] In order to achieve the above object, the present invention attaches metal palladium nuclei or metal silver nuclei to the surface of a non-conductor, and then converts the non-conductor into a copper salt and a nickel salt. Copper-based plating containing at least 80% copper, especially at least 85% copper, by first immersing it in a plating bath containing a reducing agent and electroplating at a low current density of 0.5 A/drrr or less. Form a coating, then LA/d
Electroplating is performed at a high current density of rrr or more to form a plating film containing 30% or more of nickel.

即ち、本発明は、常法に従って金属パラジウム核又は金
属銀核を非導電体上に付着させた後、ます銅塩とニッケ
ル塩と還元剤とを含むめっき浴で0.5A/dm以下の
低電流密度において電気めっきを施し、銅を主体とする
めっき被膜を形成するものである。この場合、金属パラ
ジウム核又は金属銀核は非導電体上に極めて薄く形成さ
れており、従来はこのためまず無電解めっきを行ない、
電気めっきを行なう場合は無電解めっき後に行なってい
たものであるが、本発明によれば、最初の電気めっきは
低電流密度で行なわれ、しかもめっき浴中に次亜リン酸
塩等の還元剤が添加されているので、電気めっきと同時
に無電解めっきも行なわれ、金属パラジウム核、金属銀
核が補強され、このため薄層の金属パラジウム核や金属
銀核に直接電気めっきを施しても支障がなく、しかも、
このように低電流密度で電気めっきを行なうため、めっ
き浴中に銅塩とニッケル塩とが共存していても、銅が優
先的に析出し、銅を主体とした、例えば銅の割合が80
%以上のめっき層が形成される。
That is, in the present invention, after a metal palladium nucleus or a metal silver nucleus is deposited on a non-conductor according to a conventional method, a plating bath containing a copper salt, a nickel salt, and a reducing agent is used to deposit a metal palladium nucleus or a metal silver nucleus on a non-conductor. Electroplating is performed at a current density to form a plating film mainly composed of copper. In this case, the metal palladium core or the metal silver core is formed extremely thinly on the non-conductor, and conventionally, for this reason, electroless plating is first performed,
When electroplating was performed, it was performed after electroless plating, but according to the present invention, the first electroplating is performed at a low current density, and furthermore, reducing agents such as hypophosphite are used in the plating bath. is added, electroless plating is performed at the same time as electroplating, and the metal palladium cores and metal silver cores are reinforced. Therefore, there is no problem when directly electroplating a thin layer of metal palladium cores or metal silver cores. There is no, and moreover,
Because electroplating is performed at such a low current density, even if copper salt and nickel salt coexist in the plating bath, copper will precipitate preferentially, and the ratio of copper as the main component, for example, 80%.
% or more of the plating layer is formed.

次いで、本発明は、このように銅を主体とするめっき層
を所定厚さに形成した後、被めっき物をめっき浴から引
き上げて別のめっき浴に移送することなく、そのまま同
一のめっき浴中で電流密度をIA/d+rr以上に上げ
て電気めっきを行なう。この場合、このような高電流密
度でめっきを行なっても、既にその下地膜として銅めっ
き膜が形成されているので支障はなく、しかもこのよう
に高電流密度でめっきを行なうことにより、ニッケルを
30%以上の割合で含む耐食性の良好なめっき層が形成
されるものである。
Next, in the present invention, after forming a plating layer mainly composed of copper to a predetermined thickness, the object to be plated is directly placed in the same plating bath without being lifted from the plating bath and transferred to another plating bath. Electroplating is performed by increasing the current density to IA/d+rr or higher. In this case, even if plating is performed at such a high current density, there will be no problem since a copper plating film has already been formed as the base film, and furthermore, by plating at such a high current density, the nickel will be removed. A plating layer containing 30% or more of the metal and having good corrosion resistance is formed.

従って、本発明によれば、銅を主体とした高電導のめっ
き層とニッケルを30%以上含む高耐食性のめっき層と
が同一めっき浴から単に電流密度を変えるだけで連続し
て形成され、工程が短縮され、しかも電気めっきにより
両層が形成されるので、めっき時間も短縮し得、両層が
スムーズにかつ確実に形成できる。
Therefore, according to the present invention, a highly conductive plating layer mainly composed of copper and a highly corrosion-resistant plating layer containing 30% or more of nickel are successively formed in the same plating bath by simply changing the current density, and the process Since both layers are formed by electroplating, the plating time can also be shortened, and both layers can be formed smoothly and reliably.

以下、本発明につき更に詳しく説明する。The present invention will be explained in more detail below.

本発明で被めっき物となる非導電体としては、プラスチ
ック、セラミック等であり、これらに本発明に従ってめ
っきを施す場合は、必要により脱脂、エツチング等の前
処理を行なった後、表面に金属パラジウム核又は金属銀
核を形成する活性化処理を行なう。この活性化処理は常
法によって行なうことができ、例えばパラジウム核を形
成する場合は、センシタイジングーアクチベイテイング
法、キヤタライジングーアクモレレイティング法等の方
法が採用でき、また銀核を形成する場合は銀鏡反応を利
用した方法が採用し得るなど、公知の方法を用いること
ができる。
The non-conductive materials to be plated in the present invention include plastics, ceramics, etc. When plating these according to the present invention, if necessary, after performing pretreatment such as degreasing and etching, the surface is coated with metallic palladium. An activation treatment is performed to form a nucleus or a metallic silver nucleus. This activation treatment can be carried out by a conventional method.For example, when forming palladium nuclei, methods such as sensitizing-activating method and catalystizing-acmorelating method can be adopted, and methods such as forming silver nuclei can be used. In this case, a known method can be used, such as a method using a silver mirror reaction.

次いで、本発明はこのように活性化処理した非導電体を
銅塩とニッケル塩とを含み、かつ還元剤を含むめっき浴
で電気めっきする。
Next, in the present invention, the thus activated non-conductor is electroplated in a plating bath containing a copper salt and a nickel salt, and also containing a reducing agent.

ここで、めっき浴としては、銅の水溶性塩、ニッケルの
水溶性塩及び錯化剤を含有するものが好適に用いられる
が、銅塩としては硫酸銅、塩化第二銅等が使用され、ニ
ッケル塩としては硫酸ニッケル、塩化ニッケル等が使用
される。この場合、銅塩の濃度は0.001〜0.2モ
ル/Q、特に0.01〜0.2モル/Q、ニッケル塩の
濃度は0.001〜0.2%、lLz/fl、特に0.
01〜0.2モル/Qとすることができる。また、錯化
剤としては、〇−配位のもの(例えば、酢酸、乳酸、ク
エン酸、酒石酸等の各種有機酸やその塩)。
Here, as the plating bath, one containing a water-soluble copper salt, a water-soluble salt of nickel, and a complexing agent is preferably used, but as the copper salt, copper sulfate, cupric chloride, etc. are used, As the nickel salt, nickel sulfate, nickel chloride, etc. are used. In this case, the concentration of the copper salt is 0.001-0.2 mol/Q, especially 0.01-0.2 mol/Q, and the concentration of the nickel salt is 0.001-0.2%, 1Lz/fl, especially 0.
01 to 0.2 mol/Q. Further, the complexing agent is one with 0-coordination (for example, various organic acids such as acetic acid, lactic acid, citric acid, tartaric acid, etc., and their salts).

S−配位のもの(例えば、チオグリコール酸、システィ
ン)、N−配位のもの(例えば、アンモニア、グリシン
、エチレンジアミン)などが適宜使用されるが、特に好
ましい錯化剤としては、クエン酸、酒石酸、チオグリコ
ール酸、グリシンやこれらの塩等が挙げられる。
S-coordination agents (e.g., thioglycolic acid, cysteine) and N-coordination agents (e.g., ammonia, glycine, ethylenediamine) are used as appropriate; particularly preferred complexing agents include citric acid, Examples include tartaric acid, thioglycolic acid, glycine, and salts thereof.

これら錯化剤はその1種を単独で又は2種以上を組み合
わせて使用することができるが、その濃度は全金属塩濃
度に対し等モル以上であることが好ましく、更に好まし
くは2倍モル程度である。
These complexing agents can be used alone or in combination of two or more, but the concentration is preferably at least equimolar to the total metal salt concentration, more preferably about twice the molar concentration. It is.

また、上記めっき浴中には、更に還元剤を添加するもの
で、還元剤としてはNaHP O,・H2O等の次亜リ
ン酸塩、ジメチルアミンボラン等のホウ素系還元剤など
が用いられ、その濃度は1モル/Q以下、特に0.1〜
0.5モル/Qとすることが好ましい、更に、めっき浴
中には、PH調整剤、緩衝剤、安定剤、その他の添加剤
を必要に応じて添加し得る。
In addition, a reducing agent is further added to the above plating bath, and hypophosphites such as NaHP O, .H2O, boron-based reducing agents such as dimethylamine borane, etc. are used as reducing agents. The concentration is 1 mol/Q or less, especially 0.1~
It is preferable to set the amount to 0.5 mol/Q.Furthermore, a pH adjuster, a buffer, a stabilizer, and other additives may be added to the plating bath as necessary.

なお、めっき浴のPHは5〜13、特に8〜12とする
ことが望ましい。
Note that the pH of the plating bath is preferably 5 to 13, particularly 8 to 12.

本発明においては、上述したように金属パラジウム核又
は金属銀核を付着させた非導電体を上記めっき浴中に浸
漬し、まずDko、5A/d−以下の低電流密度で電気
めっきする。これにより金属パラジウム核又は金属銀核
の薄層(通常0.IIAn以下)が形成された非導電体
上に直接電気めっきが施され、しかも銅を80%以上、
特に85%以上の銅を主体とするめっき被膜が形成され
る。銅分の多いめっき被膜を得る点からこの場合、電流
密度のより好適な範囲は0.01〜0.5A/dr&で
あるが、めっき初期の電流密度をO,LA/drrr以
下とし、その後定電圧制御等で0.1〜0.5A/dr
fに上げることが好適である。
In the present invention, as described above, a non-conductor to which metal palladium nuclei or metal silver nuclei are attached is immersed in the above plating bath, and first electroplated at a low current density of Dko, 5 A/d- or less. As a result, electroplating is performed directly on the non-conductive material on which a thin layer (usually 0.IIAn or less) of metallic palladium nuclei or metallic silver nuclei has been formed, and moreover, copper is deposited by 80% or more.
In particular, a plating film containing 85% or more of copper as a main component is formed. In this case, a more suitable range of current density is 0.01 to 0.5 A/dr& from the viewpoint of obtaining a plating film with a high copper content, but the current density at the initial stage of plating should be set to 0, LA/drrr or less, and then the current density should be 0.1-0.5A/dr with voltage control etc.
It is preferable to raise the value to f.

このDko、5A/d−以下での電気めっきによる銅を
主体としためっき被膜の厚さは適宜選定され、特に限定
されるものではないが、電磁波シールド層を形成する場
合であれば、通常1〜lopmである。
The thickness of the plating film mainly made of copper by electroplating at Dko, 5A/d- or less is appropriately selected and is not particularly limited, but if an electromagnetic shielding layer is to be formed, it is usually 1. ~lopm.

次に1本発明においては、上記0.5A/drrr以下
での電気めっき後、そのまま同じめっき浴中で電流密度
をLA/drrr以上、好ましくは1〜5A/dnrに
上げ、電気めっきを行なう。これにより、今度はニッケ
ルを30%以上含む耐食性の良いめっき被膜が銅を主体
としためっき被膜上に形成される。このニッケルを30
%以上含むめっき被膜の厚さも適宜選定されるが、電磁
波シールド層を形成する場合であれば、通常0.2〜5
−である。
Next, in the present invention, after electroplating at 0.5 A/drrr or less, electroplating is performed in the same plating bath by increasing the current density to LA/drrr or more, preferably from 1 to 5 A/dnr. As a result, a highly corrosion-resistant plating film containing 30% or more of nickel is formed on the copper-based plating film. This nickel is 30
The thickness of the plating film containing % or more is also selected appropriately, but when forming an electromagnetic shield layer, it is usually 0.2 to 5%.
− is.

なお、上述した電気めっきにおいて、めっき温度は15
〜90℃とすることができ、また必要により撹拌を行な
うことができる。この場合、撹拌を行なうことによって
めっき被膜中の銅含有量を高めることができ、撹拌を止
めることによりニッケル含有量を高めることができる。
In addition, in the electroplating mentioned above, the plating temperature is 15
The temperature can be set at ~90°C, and stirring can be performed if necessary. In this case, the copper content in the plating film can be increased by stirring, and the nickel content can be increased by stopping stirring.

更に、陽極としては、銅、ニッケル、銅−ニッケル合金
を使用することができ、また場合によっては不溶性陽極
を用いることもできる。
Further, as the anode, copper, nickel, or a copper-nickel alloy can be used, and in some cases, an insoluble anode can also be used.

次に、実施例により本発明を更に具体的に説明するが、
本発明は下記の実施例に制限されるものではない。
Next, the present invention will be explained in more detail with reference to Examples.
The invention is not limited to the following examples.

〔実施例〕〔Example〕

ABS樹脂板(50nynX 15mmX 3uw)を
常法により脱脂、エツチングした後、下記の活性化液を
用いて表面に金属パラジウム核を形成した。
After degreasing and etching an ABS resin plate (50 nyn x 15 mm x 3 uw) by a conventional method, metal palladium nuclei were formed on the surface using the following activation solution.

工程及び条件 2、温水洗 50℃、2分 4、酸洗     10vo1%H,S 0425℃、
2分 7:アクセラレータ AT−10610vo1% 25
℃、5分本市販(上相工業■プラスチック前処理プロセ
ス)薬品使用次に、水洗後、下記めっき浴を用いて下記
の条件でめっきを行なった。
Process and conditions 2, warm water washing at 50°C, 2 minutes 4, pickling 10vo1% H, S 0425°C,
2 minutes 7: Accelerator AT-10610vo1% 25
℃, 5 minutes Using a commercially available chemical (Kamiso Kogyo Plastic Pretreatment Process) Next, after washing with water, plating was performed using the following plating bath under the following conditions.

立ユ皇蚕 硫酸銅          0.05モル/Q硫酸ニッ
ケル       0.05   II次亜リン酸ナト
リウム   Q 、 3    Nクエン酸ナトリウム
    0 、2   nはう砂         0
.05  〃安定剤          5   ρp
mp)l             8 、3立ユ東条
止 めっき温度        80℃ 撹拌           なし 陽極           白金めっきチタン陰極電流
密度(Dk) 0分6分    0.05→0.5A/dポロ→7分 
      5  A/dボめっき膜厚(総計)   
   3.7 4以上の結果、電気めっきを最初の0分
から6分の間0.05〜0.5A/drd’で行なった
場合のめっき被膜中の銅分は約85%であり1次の6分
から7分の間5A/drrrでめっきを行なった場合の
めっき被膜中のニッケル分は約35%であった。
Liyuo Silkworm Copper Sulfate 0.05 mol/Q Nickel Sulfate 0.05 II Sodium Hypophosphite Q, 3N Sodium Citrate 0, 2N Burial Sand 0
.. 05 〃Stabilizer 5 ρp
mp) l 8, 3 standing Tojo stop plating temperature 80℃ Stirring No anode Platinum plated titanium cathode current density (Dk) 0 minutes 6 minutes 0.05 → 0.5 A/d polo → 7 minutes
5 A/d plated film thickness (total)
3.7 As a result of 4, when electroplating is performed at 0.05 to 0.5 A/drd' for the first 0 to 6 minutes, the copper content in the plating film is approximately 85%, which is the primary 6 When plating was performed at 5 A/drrr for a period of 7 minutes, the nickel content in the plating film was about 35%.

また、得られためっき被膜の外観は良好であった。Moreover, the appearance of the obtained plating film was good.

なお、上記めっき浴を用いて種々の電流密度でめっきを
行なった場合のめっき被膜中のニッケル分と電流密度と
の関係を図面に示す。
The drawings show the relationship between the nickel content in the plating film and the current density when plating was performed at various current densities using the above plating bath.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、銅を主体とした高電導のめっき被膜、
ニッケルを30%以上含む高耐食のめっき被膜の二層を
一つのめっき浴から被めっき物を取り出すことなく連続
的に形成でき、このため工程が簡略化されると共に、め
っき時間も短縮され、しかも薄い金属パラジウム核や金
属銀核上に予め無電解めっきを施すことなく直接電気め
っき皮膜を形成でき、従ってこの点でも工程の簡略化が
達成できる。このため1本発明はプラスチック等に電磁
波シールド層を形成する場合などに好適に採用される。
According to the present invention, a highly conductive plating film mainly composed of copper,
Two layers of a highly corrosion-resistant plating film containing 30% or more of nickel can be formed continuously without removing the object to be plated from a single plating bath, which simplifies the process and shortens the plating time. An electroplated film can be formed directly on a thin metal palladium core or metal silver core without electroless plating in advance, and therefore the process can be simplified in this respect as well. For this reason, the present invention is suitably employed when forming an electromagnetic shielding layer on plastic or the like.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は実施例のめっき浴を用いた場合における種々の電
流密度とめっき被膜中のニッケル分量との関係を示すグ
ラフである。 出願人  上 村 工 業 株式会社 代理人  弁理士 小 島 隆 司
The drawing is a graph showing the relationship between various current densities and the amount of nickel in the plating film when using the plating bath of the example. Applicant Uemura Kogyo Co., Ltd. Agent Patent Attorney Takashi Kojima

Claims (1)

【特許請求の範囲】[Claims] 1、非導電体の表面に金属パラジウム核又は金属銀核を
付着させた後、該非導電体を銅塩とニッケル塩とを含有
しかつ還元剤を含有するめっき浴中に浸漬し、0.5A
/dm^2以下の低電流密度で電気めっきを行なって銅
を80重量%以上含有する銅を主体とするめっき被膜を
形成し、次いで1A/dm^2以上の高電流密度で電気
めっきを行なってニッケルを30重量%以上含有するめ
っき被膜を形成することを特徴とする非導電体へのめっ
き方法。
1. After attaching a metal palladium nucleus or a metal silver nucleus to the surface of a non-conductor, the non-conductor is immersed in a plating bath containing a copper salt and a nickel salt and a reducing agent.
Electroplating is performed at a low current density of /dm^2 or less to form a copper-based plating film containing 80% by weight or more of copper, and then electroplating is performed at a high current density of 1A/dm^2 or more. A method for plating a non-conductor, the method comprising: forming a plating film containing 30% by weight or more of nickel.
JP63330683A 1988-12-27 1988-12-27 Plating method on non-conductor Expired - Lifetime JPH0633499B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63330683A JPH0633499B2 (en) 1988-12-27 1988-12-27 Plating method on non-conductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63330683A JPH0633499B2 (en) 1988-12-27 1988-12-27 Plating method on non-conductor

Publications (2)

Publication Number Publication Date
JPH02175895A true JPH02175895A (en) 1990-07-09
JPH0633499B2 JPH0633499B2 (en) 1994-05-02

Family

ID=18235411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63330683A Expired - Lifetime JPH0633499B2 (en) 1988-12-27 1988-12-27 Plating method on non-conductor

Country Status (1)

Country Link
JP (1) JPH0633499B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05195289A (en) * 1992-01-24 1993-08-03 Permelec Electrode Ltd Apparatus for electrolytic production of metallic foil
US5616230A (en) * 1993-05-24 1997-04-01 Okuno Chemical Industries Co., Ltd. Method for direct-electroplating an electrically nonconductive substrate
JP2002155392A (en) * 2000-11-16 2002-05-31 Nec Corp Portable telephone casing
JP2007084886A (en) * 2005-09-22 2007-04-05 Fujifilm Corp Plating method, conductive film, translucent electromagnetic shielding film, and optical filter
WO2007055223A1 (en) * 2005-11-08 2007-05-18 Fujifilm Corporation Method for forming metal film and method for forming metal pattern
US20120160697A1 (en) * 2009-09-28 2012-06-28 Atotech Deutschland Gmbh Process for applying a metal coating to a non-conductive substrate
US8268400B2 (en) 2007-09-28 2012-09-18 Fujifilm Corporation Method and apparatus for producing conductive material
EP2803756A1 (en) * 2013-05-13 2014-11-19 Atotech Deutschland GmbH Method for depositing thick copper layers onto sintered materials

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05195289A (en) * 1992-01-24 1993-08-03 Permelec Electrode Ltd Apparatus for electrolytic production of metallic foil
US5616230A (en) * 1993-05-24 1997-04-01 Okuno Chemical Industries Co., Ltd. Method for direct-electroplating an electrically nonconductive substrate
WO2004092451A1 (en) * 1993-05-24 2004-10-28 Kuniaki Otsuka Method of directly forming electroplate layer on the surface of nonconductive material
JP2002155392A (en) * 2000-11-16 2002-05-31 Nec Corp Portable telephone casing
US6996425B2 (en) 2000-11-16 2006-02-07 Nec Corporation Cellular phone housing
JP2007084886A (en) * 2005-09-22 2007-04-05 Fujifilm Corp Plating method, conductive film, translucent electromagnetic shielding film, and optical filter
WO2007055223A1 (en) * 2005-11-08 2007-05-18 Fujifilm Corporation Method for forming metal film and method for forming metal pattern
JP2007131875A (en) * 2005-11-08 2007-05-31 Fujifilm Corp Metal film forming method and metal pattern forming method
US8268400B2 (en) 2007-09-28 2012-09-18 Fujifilm Corporation Method and apparatus for producing conductive material
US20120160697A1 (en) * 2009-09-28 2012-06-28 Atotech Deutschland Gmbh Process for applying a metal coating to a non-conductive substrate
EP2803756A1 (en) * 2013-05-13 2014-11-19 Atotech Deutschland GmbH Method for depositing thick copper layers onto sintered materials
WO2014184102A3 (en) * 2013-05-13 2015-01-08 Atotech Deutschland Gmbh Method for depositing thick copper layers onto sintered materials
CN105189827A (en) * 2013-05-13 2015-12-23 埃托特克德国有限公司 Method for depositing thick copper layers onto sintered materials
CN105189827B (en) * 2013-05-13 2017-09-12 埃托特克德国有限公司 Deposit the method on thick copper layer to agglomerated material

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